JPH0413507A - Drill of sintered body of si3n4 coated with diamond - Google Patents
Drill of sintered body of si3n4 coated with diamondInfo
- Publication number
- JPH0413507A JPH0413507A JP11474890A JP11474890A JPH0413507A JP H0413507 A JPH0413507 A JP H0413507A JP 11474890 A JP11474890 A JP 11474890A JP 11474890 A JP11474890 A JP 11474890A JP H0413507 A JPH0413507 A JP H0413507A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- si3n4
- diamond
- coating layer
- drill
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 20
- 239000010432 diamond Substances 0.000 title claims abstract description 20
- 239000011247 coating layer Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 abstract description 9
- 229910021364 Al-Si alloy Inorganic materials 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 238000005299 abrasion Methods 0.000 abstract 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 abstract 1
- 229910033181 TiB2 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000005553 drilling Methods 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、Ａｌ−Ｓｉ合金やプリント基板の穴明は加工
に適したダイヤモンド被覆Ｓｉ Ｎ 焼結体製ドリルに
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a drill made of a diamond-coated Si N sintered body and suitable for drilling holes in Al--Si alloys and printed circuit boards.
従来から、Ａｌ−Ｓｉ合金やプリント基板に穴明は加工
を行なうためのドリルとして、ｗｃ基超超硬合金らなる
ドリルや、このＷＣＣ超超硬合金製ドリル表面に通常の
ＣＶＤ法等の化学蒸着法又はイオンブレーティング法や
スパッタリング法等の物理蒸着法により、Ｔ１やＺｒ等
の炭化物、窒化物及び炭窒化物からなる単層又は複層の
硬質被覆層を層厚０．２〜２０μｍで形成した表面被覆
ＷＣＣ超超硬合金製ドリル用いられている。Conventionally, drills for drilling holes in Al-Si alloys and printed circuit boards have been used, such as drills made of WC-based cemented carbide, and drills made of WCC cemented carbide that are coated with chemicals such as ordinary CVD methods. A single or multilayer hard coating layer made of carbides, nitrides, and carbonitrides such as T1 and Zr is deposited with a layer thickness of 0.2 to 20 μm by a vapor deposition method or a physical vapor deposition method such as an ion blasting method or a sputtering method. A drill made of surface coated WCC cemented carbide is used.
しかし、近年ではＡｌ−Ｓｉ合金やプリント基板の穴明
は加工においても省力化及び高速化が要求され、それに
伴ない穴明は条件が一層厳しくなっている。この過酷な
条件下で上記ｗｅ基超超硬合金製ドリルよりＡｌ−Ｓｉ
合金やプリン１基板に穴明は加工すると、大きな摩耗の
ため極めて短時間で寿命となった。又、表面被覆ｗｅ基
超超硬合金製ドリルおいても短時間で硬質被覆層が大き
く摩耗したり、剥離やチッピング又は欠けが発生したり
、或いは被削物が溶着したりして所望の切削性能を示さ
ないのが現状である。However, in recent years, labor-saving and high-speed processing are required for drilling holes in Al--Si alloys and printed circuit boards, and as a result, conditions for drilling holes have become more severe. Under these harsh conditions, the Al-Si
When holes were drilled into alloys or Print 1 substrates, the service life ended in an extremely short period of time due to large wear. In addition, even with drills made of surface-coated WE-based cemented carbide, the hard coating layer may wear significantly in a short period of time, peeling, chipping, or chipping may occur, or the workpiece may be welded, making it difficult to perform the desired cutting. The current situation is that it does not show performance.
そのため、ＷＣＣ超超硬合金製ドリル表面に、公知の低
圧気相合成法によりダイヤモンド被覆層を形成すること
が試みられているが、未だ実用には至っていない。Therefore, attempts have been made to form a diamond coating layer on the surface of a WCC cemented carbide drill by a known low-pressure vapor phase synthesis method, but this has not yet been put to practical use.
その理由は、
■ 超硬合金中のＣＯの表面に耐摩耗性の低いグラファ
イトが析出しやすく、これを防ぐためＣ。The reason for this is: ■ Graphite, which has low wear resistance, tends to precipitate on the surface of CO in cemented carbide, and C is used to prevent this.
量を減らすと超硬合金の靭性が低下し、切削時に欠けが
生じやすくなる、
■ ダイヤモンドと超硬合金の線膨張係数が大きく異な
るため、残留応力によりダイヤモンド被覆層の密着強度
が低くなり、層厚が２０μｍを超えると被覆層が自ら剥
離し、又層厚が薄くても切削時に剥離が生じやすい等の
為である。If the amount is reduced, the toughness of the cemented carbide will decrease, making it more likely to chip during cutting. ■ Because the linear expansion coefficients of diamond and cemented carbide are significantly different, the adhesion strength of the diamond coating layer will decrease due to residual stress, causing the layer to crack. This is because if the thickness exceeds 20 μm, the coating layer will peel off by itself, and even if the layer thickness is thin, peeling will easily occur during cutting.
本発明はかかる従来の事情に鑑み、過酷な条件下でＡｌ
−Ｓｉ合金やプリント基板の穴明は加工を行なった場合
でも、優れた耐摩耗性と耐溶着性を示し、従来よりも長
い工具寿命を達成しつるドリルを提供することを目的と
する。In view of such conventional circumstances, the present invention has been developed to
- The object of the present invention is to provide a vine drill that exhibits excellent wear resistance and welding resistance even when drilling holes in Si alloys and printed circuit boards, and achieves a longer tool life than conventional ones.
ＣＩ！！題を解決するための手段〕
上記目的を達成するため、本発明においては、Ｓｉ、Ｎ
、を主成分とし、ＭｇＯ，Ｙ、Ｏ，、Ａ１．Ｏ，、ＡＩ
Ｎ。CI! ! Means for Solving the Problem] In order to achieve the above object, in the present invention, Si, N
, with MgO, Y, O,, A1. O,,AI
N.
ＺｒＯ、ＨｆＯ、ＴｉＣ，ＴｉＮ、 Ｂ ４Ｃ、ＢＮ及
びＴｉＢ のうちの少なくとも一種を夫々０．０１〜
３０重量％、合計で５０重量％以下含有したＳｉ Ｎ
焼結体からなる基体と、この基体表面に設けた層厚０
．１μｍ以上のダイヤモンド被覆層とからなるダイヤモ
ンド被１］１ｓｉＮ 焼結体製ドリルを提供する。At least one of ZrO, HfO, TiC, TiN, B4C, BN, and TiB each in an amount of 0.01 to
SiN containing 30% by weight, 50% by weight or less in total
A base made of a sintered body and a layer with a thickness of 0 provided on the surface of this base.
．． A drill made of a diamond coating 1]1siN sintered body is provided, which includes a diamond coating layer of 1 μm or more.
本発明のダイヤモンド被覆Ｓｉ Ｎ 焼紗体製ドリル
においては、基体であるＳｉ Ｎ 焼結体が超硬合金
より高い硬度を持ち耐摩耗性に優れるうえ、ダイヤモン
ドとほぼ同じ線膨張係数を有するためダイヤモンド被覆
層に残留応力が発生せず、層厚が２０μｍ以上と厚くな
っても基体との密着性に優れたダイヤモンド被覆層が形
成出来る。又、ダイヤモンド被覆層は耐摩耗性に優れる
うえ、Ａｌ−Ｓｉ合金やプリント基板の被削材に対する
耐溶着性にも優れている。In the diamond-coated Si N sintered gauze body drill of the present invention, the Si N sintered body that is the base material has higher hardness than cemented carbide and excellent wear resistance, and has almost the same linear expansion coefficient as diamond. No residual stress is generated in the coating layer, and a diamond coating layer with excellent adhesion to the substrate can be formed even if the layer thickness is as thick as 20 μm or more. In addition, the diamond coating layer has excellent wear resistance and also has excellent adhesion resistance to work materials such as Al-Si alloys and printed circuit boards.
但し、ダイヤモンド被覆層の層厚が０．１μｍ未満では
ダイヤモンド被覆による耐摩耗性や耐溶着性の効果が現
われない。しかし、層厚が２００釦を超えるダイヤモン
ド被覆層を設けることはト°リルとして不必要且つ不経
済である。However, if the thickness of the diamond coating layer is less than 0.1 .mu.m, the effects of the diamond coating on wear resistance and adhesion resistance will not appear. However, it is unnecessary and uneconomical to provide a diamond coating layer with a layer thickness of more than 200 buttons.
又、一般にＳｉ Ｎ は共有結合性物質であるため焼結
性が悪いことが知られているが、焼結助剤としてＭｇＯ
，Ｙ Ｏ、Ａｔ Ｏ、ＡＩＮ （Ｄうちの少なくとも一
種を添加して焼結することにより、Ａｌ−Ｓｉ合金やプ
リント基板の穴明は用のドリルの基体として充分に緻密
で硬く且つ高硬度なＳｉ Ｎ 焼結体を得ることが出来
る。更に、ＺｒＯとＨｆＯを加えるとＳｉ Ｎ 焼結体
の高温強度は向上し、ＴｉＣ，ＴｉＮ、 Ｂ４Ｃ、ＢＮ
及びＴｉＥ を加えるとＳｉ Ｎ 焼結体の耐摩耗性
が向上することが判った。In addition, it is generally known that SiN has poor sinterability because it is a covalent bonding substance, but MgO is used as a sintering aid.
, Y O, At O, AIN (D) By adding at least one of these and sintering it, drilling holes in Al-Si alloys and printed circuit boards can be made sufficiently dense and hard as a base material for drills. A SiN sintered body can be obtained.Furthermore, by adding ZrO and HfO, the high temperature strength of the SiN sintered body is improved, and TiC, TiN, B4C, BN
It was found that the addition of TiE improves the wear resistance of the Si N sintered body.
上記焼結助剤の添加量は夫々が０．０１〜３０重量％の
範囲であり、いずれも０．０１重量％未満では添加の効
果がなく、３０重量％を超えると、ＭｇＯ。The amount of each of the sintering aids added is in the range of 0.01 to 30% by weight, and if it is less than 0.01% by weight, there is no effect of addition, and if it exceeds 30% by weight, MgO.
Ｙ Ｏ、ＡＩＯ、ＡＩＮに関しては耐摩耗性が低下し、
ＺｒＯ、ＨｆＯ、Ｔｉｅ、 ＴｉＮ、 Ｂ Ｃ！、 Ｂ
Ｎ、 ＴｉＢ については靭性が低下するため、添加
量を０．０１〜３０重量％と限定した。又、焼結助剤の
添加量が合計で５０重量％を超えるとＳｉ Ｎ 焼結体
の強度が低下する。Wear resistance decreases for Y O, AIO, and AIN,
ZrO, HfO, Tie, TiN, B C! , B
Since the toughness of N and TiB decreases, the amount added is limited to 0.01 to 30% by weight. Furthermore, if the total amount of the sintering aid added exceeds 50% by weight, the strength of the Si N sintered body decreases.
尚、Ｓｉ Ｎ 焼結体の製造方法は、焼結助剤及びそ
の添加量を除き通常の方法と変わりなく、例えば焼結助
剤を加えたＳｉ Ｎ 粉末の圧縮成形体を非酸化性雰
囲気中にて１６５０〜１９００Ｃ”で焼結する。The method for producing the Si N sintered body is the same as the usual method except for the sintering aid and the amount added. For example, a compression molded body of Si N powder with the sintering aid added is placed in a non-oxidizing atmosphere Sintered at 1650-1900C''.
第１表に列記する焼結助剤を添加したＳｉ Ｎ 粉末を
充分混合し、１ ｔｏｎ／Ｃｍ”の圧力で成形した後、
５気圧のＮ ガス中において１８５０ Ｃ”で２時間焼
結することにより、刃先外径１０．０ＩＩＨ１１で刃長
９Ｑ、Ｑｍｍの寸法を持ったＪｘｓ Ｂ ４３０１の形
状のＳｉ Ｎ 焼結体製ドリルを夫々製造した。After thoroughly mixing the Si N powder to which the sintering aid listed in Table 1 was added and molding it at a pressure of 1 ton/Cm,
By sintering at 1850 C'' in N gas at 5 atm for 2 hours, a Si N sintered drill in the shape of Jxs B 4301 with an outer diameter of the cutting edge of 10.0IIH11 and a blade length of 9Q and Qmm was made. manufactured respectively.
第 １ 表
このＳｉ Ｎ 焼結体製ドリルの表面に、公知の低圧
気相合成法（熱フイラメント法）を用いて下記条件によ
り第２表の如く層厚１．０〜５０μｍのダイヤモンド被
覆層を夫々形成した。Table 1: A diamond coating layer with a thickness of 1.0 to 50 μm was applied to the surface of this SiN sintered drill using a known low-pressure vapor phase synthesis method (thermal filament method) under the following conditions as shown in Table 2. formed respectively.
反応容器 ：直径２００簡の石英管フィラメント材
質 ：金属タングステンフィラメント温度 ７２４
００ Ｃ６フィラメントとドリル。Reaction vessel: Quartz tube with a diameter of 200 mm Filament material: Metallic tungsten filament Temperature: 724
00 C6 filament and drill.
先端間距離 °１０°０１
全 圧 ： Ｚｏｏ ｔｏｒｒ雰囲気
ガス ：Ｈ−１％ＣＨガス
時 間 ：ｏ、５〜１０時間得られた本発
明例の各ダイヤモンド被覆Ｓｉ Ｎ焼結体製ドリル（試
料黒］〜４）について、下記条件でＡ４−３ｉ合金の穴
明は加工試験を行なった。Distance between tips: °10°01 Total pressure: Zoo torr Atmospheric gas: H-1% CH gas Time: o, 5 to 10 hours ] - 4) A drilling test of A4-3i alloy was conducted under the following conditions.
被削材 ： Ａ ３９０ 切削速度 ： ９０ ｍ／ｍｉｎ 送り速度 ： ０．２３−ｒｅｖ。Work material: A 390 Cutting speed: 90m/min Feed rate: 0.23-rev.
深 さ ：（Ａ２．Ｑｍ切削泊
：無し
この穴明は加工試験で、ドリルが破損や摩耗により寿命
に至るまで切削を行なって可能な穴明は加工数を測定し
、穴明は加工終了後にドリルの刃先を観察し、又被削材
の溶着状態を調べた。Depth: (A2.Qm cutting depth
: None This hole drilling is a machining test. The drill is cut until the end of its life due to damage or wear. The number of holes that can be drilled is measured, and the drill edge is observed after the drilling is completed. The welding condition of the cutting material was investigated.
比較例として、上記各ドリルと同じ寸法及び形状を有し
、Ｊ工５ＫＩＯに相当する組成のＷＣＣ超超硬合金製ド
リル試料黒５）、及びその表面に公知の真空アーク蒸着
法により層厚２．０μｍのＴｉＮ被覆層を形成した表面
波ａｗｅ基超硬合金製ドリル（試料黒６）を準備し、上
記と同様の穴明は加工試験を行なった。As a comparative example, a WCC cemented carbide drill sample black 5) having the same dimensions and shape as the above-mentioned drills, and a composition equivalent to J-KIO 5KIO, and a layer thickness of 2 A surface wave awe based cemented carbide drill (sample black 6) on which a TiN coating layer of .0 μm was formed was prepared, and a drilling test similar to that described above was conducted.
得られた結果を第２表に示す。The results obtained are shown in Table 2.
第 ２ 表 （註）表中の※印は比較例である。Table 2 (Note) The * mark in the table is a comparative example.
本発明によるダイヤモンド被１１ｓｉＮｍ結体製ドリル
は、Ａｌ−３１合金やプリント基板の穴明は加工におい
て優れた耐摩耗性と耐溶着性を示し、過酷な条件下にお
いても工具寿命が長く、従来より遥かに長期にわたり良
好な寸法精度の穴明は加工を行なうことが出来る。The diamond-coated 11siNm solid drill according to the present invention exhibits excellent wear resistance and adhesion resistance when drilling holes in Al-31 alloy and printed circuit boards, and has a longer tool life even under severe conditions than conventional drills. Holes can be drilled with good dimensional accuracy over a much longer period of time.
Claims (1)
＿３、Ａｌ＿２Ｏ＿３、ＡｌＮ、ＺｒＯ＿２、ＨｆＯ＿
２、ＴｉＣ、ＴｉＮ、Ｂ＿４Ｃ、ＢＮ及びＴｉＢ＿２の
うちの少なくとも一種を夫々０．０１〜３０重量％、合
計で５０重量％以下含有した、Ｓｉ＿３Ｎ＿４焼結体か
らなる基体と、この基体表面に設けた層厚０．１μｍ以
上のダイヤモンド被覆層とからなるダイヤモンド被覆Ｓ
ｉ＿３Ｎ＿４焼結体製ドリル。(1) Main component is Si_3N_4, MgO, Y_2O
_3, Al_2O_3, AlN, ZrO_2, HfO_
2. A base made of a Si_3N_4 sintered body containing at least one of TiC, TiN, B_4C, BN and TiB_2 in an amount of 0.01 to 30% by weight each, and a total of 50% by weight or less, and a substrate provided on the surface of the substrate. Diamond coating S consisting of a diamond coating layer with a layer thickness of 0.1 μm or more
i_3N_4 sintered drill.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11474890A JPH0413507A (en) | 1990-04-27 | 1990-04-27 | Drill of sintered body of si3n4 coated with diamond |
| US07/691,446 US5137398A (en) | 1990-04-27 | 1991-04-25 | Drill bit having a diamond-coated sintered body |
| EP91106680A EP0454114B1 (en) | 1990-04-27 | 1991-04-25 | Drill of diamond-coated sintered body |
| DE69103073T DE69103073T2 (en) | 1990-04-27 | 1991-04-25 | Drill with sintered diamond-coated body. |
| KR1019910006742D KR940011212B1 (en) | 1990-04-27 | 1991-04-26 | Drill bit having a diamond-coated sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11474890A JPH0413507A (en) | 1990-04-27 | 1990-04-27 | Drill of sintered body of si3n4 coated with diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0413507A true JPH0413507A (en) | 1992-01-17 |
Family
ID=14645689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11474890A Pending JPH0413507A (en) | 1990-04-27 | 1990-04-27 | Drill of sintered body of si3n4 coated with diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0413507A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0833383A3 (en) * | 1996-08-27 | 1998-07-29 | Dowa Mining Co., Ltd. | Power module circuit board and a process for the manufacture thereof |
-
1990
- 1990-04-27 JP JP11474890A patent/JPH0413507A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0833383A3 (en) * | 1996-08-27 | 1998-07-29 | Dowa Mining Co., Ltd. | Power module circuit board and a process for the manufacture thereof |
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