JPH0413253A - Magneto-optical memory element and production thereof - Google Patents

Magneto-optical memory element and production thereof

Info

Publication number
JPH0413253A
JPH0413253A JP11612490A JP11612490A JPH0413253A JP H0413253 A JPH0413253 A JP H0413253A JP 11612490 A JP11612490 A JP 11612490A JP 11612490 A JP11612490 A JP 11612490A JP H0413253 A JPH0413253 A JP H0413253A
Authority
JP
Japan
Prior art keywords
substrate
guide groove
thin film
regions
magneto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11612490A
Other languages
Japanese (ja)
Inventor
Junsaku Nakajima
淳策 中嶋
Yoshiteru Murakami
善照 村上
Akira Takahashi
明 高橋
Kenji Ota
賢司 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11612490A priority Critical patent/JPH0413253A/en
Publication of JPH0413253A publication Critical patent/JPH0413253A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To decrease crosstalks intruded with the information of adjacent tracks by laminating thin-film layers including magnetic layers having a high thermal conductivity on a substrate including guide grooves, then removing the thin-film layers laminated in the inclined side walls of the guide grooves by dry etching. CONSTITUTION:The guide grooves 50 having the inclined side walls 39, 40, 41, 42 of the shape flaring toward upper apertures are formed on the polycarbon ate substrate 1 and the thin-film layers 2 are formed on the bottom walls of the guide grooves 50 in the regions (p), (q) and the substrate surface in the regions (l), (m), (n). There are no metallic thin-film layers having the large thermal conductivity in the regions (e), (f), (g), (h) when the regions (l), (m), (n) are subjected to recording in this case and, therefore, the information recorded in the regions (l), (m), (n) is prevented from being recorded in the regions (p), (q). The crosstalks are drastically decreased even if the diameter of a laser beam is larger than the region (m) at the time of reading the informa tion of the region (m) in this way.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 この発明は光磁気メモリ素子及びその作製方法に関し、
更に詳しくは案内溝を有する基板上に磁気記録層を積層
してなり、レーザ光などの光によって情報の記録、再生
並びに消去がおこなえる情報の書き換えが可能な大容量
メモリに関するものである。
DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application This invention relates to a magneto-optical memory element and a method for manufacturing the same.
More specifically, the present invention relates to a large-capacity memory in which a magnetic recording layer is laminated on a substrate having a guide groove, and in which information can be recorded, reproduced, and erased using light such as a laser beam, and information can be rewritten.

(ロ)従来の技術 従来のこの種光磁気メモリ素子は、第9図に示すように
、基本的には、案内溝20が形成された基板21上に記
録層を含む薄膜層22が形成された後、樹脂によるバッ
クコート層23が形成された構造をもっている。
(B) Prior art As shown in FIG. 9, a conventional magneto-optical memory element of this type basically consists of a thin film layer 22 including a recording layer formed on a substrate 21 on which a guide groove 20 is formed. After that, a back coat layer 23 made of resin is formed.

一般に、記録層は、第8図に示す保持力Hc−温度温度
線曲線なるような磁気特性をもっており、記録:よレー
ザ先により記録層をキュリー点(Tc)近くまで昇温し
、外部磁場を印加することで昇温さねた部分の磁化を外
部磁場の方向に揃えることにより行われる。
Generally, the recording layer has magnetic properties as shown in the coercive force Hc-temperature line curve shown in Figure 8. During recording, the temperature of the recording layer is raised to near the Curie point (Tc) using a laser tip, and an external magnetic field is applied. This is done by aligning the magnetization of the part whose temperature has been raised by applying it to the direction of the external magnetic field.

第9図において、情報は薄膜、122の領域l。In FIG. 9, the information is in the thin film, region l of 122.

mnの第1記録部2’4.25.26らしくは領域p、
qの第2記録部27.28でなされる。また、薄膜層2
2の領域e、I’、g、hには案内溝20の側面(側壁
)29,30.31.32が位置し、基板21に案内溝
20を形成する際に、この側面29〜32を案内溝20
の底面20+Lと垂直に形成することは困難であり、傾
斜をもつこととな、る。この傾向は基板21とし4てガ
ラスを用いるときよりポリカーボネートを用いるときに
著しい。
The first recording part 2'4.25.26 of mn seems to be area p,
This is done in the second recording section 27, 28 of q. In addition, thin film layer 2
Side surfaces (side walls) 29, 30, 31, and 32 of the guide groove 20 are located in the regions e, I', g, and h of 2, and when forming the guide groove 20 on the substrate 21, the side surfaces 29 to 32 are Guide groove 20
It is difficult to form it perpendicularly to the bottom surface 20+L of the bottom surface 20+L, so that it has an inclination. This tendency is more pronounced when polycarbonate is used as the substrate 21 than when glass is used.

故に、案内溝20が形成された基板21上に薄膜層22
を形成する際には、案内溝側面29〜32にも、薄膜層
22が形成されることとなる。この薄膜層1よ、例えば
、第7図に示すように、誘電体層33a、33bと、記
録層である磁性層34並びに最上層の反射層35からな
る構造をもっている。このうち特に記録層34及び反射
層35は熱伝導率が誘電体層33a、33bより高く、
レーザー光を照射し2て情報の記録を行う際、案内溝側
面の薄膜@29〜32を介して広い範囲がキュリー点近
くまて昇温さとることとなる。
Therefore, a thin film layer 22 is formed on the substrate 21 on which the guide groove 20 is formed.
When forming the guide groove, the thin film layer 22 is also formed on the guide groove side surfaces 29 to 32. For example, as shown in FIG. 7, this thin film layer 1 has a structure consisting of dielectric layers 33a and 33b, a magnetic layer 34 which is a recording layer, and a reflective layer 35 as the uppermost layer. Among these, especially the recording layer 34 and the reflective layer 35 have higher thermal conductivity than the dielectric layers 33a and 33b.
When recording information by irradiating laser light 2, a wide range is heated to near the Curie point via the thin films @29 to 32 on the side surfaces of the guide groove.

つまり、第9図において領域1.m、nの第1記録FW
24.25.2.6に記録を行った場合、領域e、f、
g、 h!17)薄膜層の側面29〜32を介して領域
pの第2記録層27には領域1.mの第1記録層24.
25の情報の一部ろく記録され、方、領域qの第2記録
層28には領域m、nの第132録層25.26の情報
の一部が記録されていr二。
That is, in FIG. 9, area 1. 1st record FW of m, n
24.25.2.6, areas e, f,
g, h! 17) The second recording layer 27 in the area p has areas 1. m first recording layer 24.
On the other hand, part of the information on the 132nd recording layer 25 and 26 of the areas m and n is recorded on the second recording layer 28 of the area q.

(ハ)発明が解決しようとする課題 ところで、領域mに書いた情報を涜む1こめに、レーザ
ー光を領域ff;のトラックに照射した場合、レーザー
光の径か領域mのトラックの最大幅Mよりも大きいこと
から、領域p、qに書かれた情報も読むこととなる。領
域p、領領域には、前述した様に領域1.領域nに書か
れfコ情報ら記録されているから、領域mの情報に領域
l、領域nの各トラックに書き込まれた情報か重畳され
るおそれかめる。
(c) Problems to be Solved by the Invention By the way, if a laser beam is irradiated onto a track in area ff; in order to destroy the information written in area m, then the diameter of the laser beam or the maximum width of the track in area m Since it is larger than M, information written in areas p and q will also be read. As mentioned above, the region p and territory region include region 1. Since the information written in area n and the f information are recorded, there is a possibility that the information written in the tracks in area l and area n may be superimposed on the information in area m.

すなわち、隣接トラックの情報が混入するクロストーク
が大きくなるという問題かあった。
That is, there was a problem in that crosstalk caused by the mixing of information from adjacent tracks becomes large.

(ニ)課題を解決するための手段及び作用この発明は、
複数の案内溝を有する基板上に実質的に熱伝導率の高い
磁性層を含む薄膜層を有し、その磁性層へ光を照射する
ことにより情報の記録、再生並びに消去がおこなわれる
光磁気メモリ素子において、底面から上方開口へ向かつ
て実質的に幅広の傾斜側壁を有する案内溝と、その案内
溝を含む基板上で、かつ案内溝の上記傾斜側壁を除く全
面に積層された薄膜層とからなる光磁気メモリ素子を提
供するものであり、その作製方法として複数の案内溝を
有する基板上に実質的に熱伝導率の高い磁性層を含C薄
膜層を形成し、そのW&磁性層光を照射することにより
情報の記録、再生並びに消去をおこなう光磁気メモリ素
子を作製するに際して、(1)基板上に案内溝を形成し
、(11)その案内溝を含乙゛基板上に、全面に、実質
的に熱伝導率の高い磁性層を含む薄膜層を積層し、(山
)しかる後、ドライエツチングによって案内溝の傾斜側
壁に積層されfこ薄膜層を除去することを特徴とする光
磁気メモリ素子の作製方法を提供するものである。
(d) Means and operation for solving the problem This invention includes:
A magneto-optical memory that has a thin film layer containing a magnetic layer with substantially high thermal conductivity on a substrate with multiple guide grooves, and information is recorded, reproduced, and erased by irradiating the magnetic layer with light. In the element, a guide groove having a substantially wide sloped sidewall from the bottom surface toward the upper opening, and a thin film layer laminated on the substrate including the guide groove and over the entire surface of the guide groove except for the sloped sidewall. The method for manufacturing the magneto-optical memory element is to form a C thin film layer containing a magnetic layer with substantially high thermal conductivity on a substrate having a plurality of guide grooves, and to emit light from the W&magnetic layer. When producing a magneto-optical memory element that records, reproduces, and erases information by irradiation, (1) a guide groove is formed on a substrate, and (11) a guide groove is formed on the entire surface of the substrate, including the guide groove. A magneto-optical device characterized in that a thin film layer including a magnetic layer with substantially high thermal conductivity is laminated, and then the thin film layer laminated on the inclined side wall of the guide groove is removed by dry etching. A method for manufacturing a memory element is provided.

すなわち、この発明は、基板表面に対して斜めに形成さ
れた案内溝か傾斜側壁をしつ基板を使用しf;光磁気メ
モリ素子において、上記傾斜側壁上に磁性層からなる情
報の記録、再生並びに消去用の薄膜層が形成されないよ
うに、案内溝を含む基板上に、全面に、薄膜層の形成を
行った後に上記傾斜側壁上の薄膜層をイオンエツチング
などのドライエツチング法で除去するようにし、それに
よって傾斜側壁が位置する領域の熱伝導率を薄膜が残存
される案内溝の底壁や案内溝間の基板上の領域における
それよりも小さくし、案内溝の底壁上に形成された薄膜
層に、傾斜側壁を介して案内溝間の基板上の各領域の薄
膜層に記録された情報の−部を記録され難くする二とで
、々ロストークを低減できろ、。
That is, the present invention uses a substrate having guide grooves or inclined sidewalls formed obliquely with respect to the substrate surface; and in a magneto-optical memory element, information recording and reproducing is performed using a magnetic layer on the inclined sidewalls. In addition, in order to prevent the formation of a thin film layer for erasing, the thin film layer is formed on the entire surface of the substrate including the guide groove, and then the thin film layer on the sloped side wall is removed by a dry etching method such as ion etching. , thereby making the thermal conductivity of the area where the sloped sidewall is located smaller than that of the bottom wall of the guide groove where the thin film remains or the area on the substrate between the guide grooves, and forming a thermal conductivity on the bottom wall of the guide groove. Lostalk can be reduced by making it difficult for the information recorded in each area of the thin film layer on the substrate between the guide grooves to be recorded on the thin film layer through the inclined sidewalls.

この発明におけろ基板としτ′よ、ボ11カーボネート
やガラスちるいはアモルファスポリオレフィン(APO
)などのらのか好ましい材料として挙げられる。これら
−)基板上に上肢された案内溝は、溝底面から開ロバ\
向かって実質的に幅広の傾斜側壁を有する。
In this invention, the substrate τ' is made of carbonate, glass, or amorphous polyolefin (APO).
) are mentioned as preferred materials. These guide grooves placed on the board can be opened from the bottom of the groove.
It has sloping side walls that are substantially wider towards it.

二の発明において、案内溝が実質的に幅広の傾斜側壁を
存す6とは、ぞ・つ溝の縦断面が略逆台形状の形状に設
定されることを意味する。そして、この案内溝は、周知
の方法、例えば、ガラスを用いたドライエツチング法や
ガラス基板上に紫外線硬化樹脂をスピンコードした後、
これを案内溝をつけたスタンIくに押しつけ、ざらに紫
外線を照射して樹脂を硬化させ、案内溝を転写する方法
、いわゆる、2P法(phcto pclymer法)
、樹脂を用いた射出成形法や2P法などて形成され得る
In the second invention, the expression 6 that the guide groove has a substantially wide inclined side wall means that the longitudinal section of the groove is set to have a substantially inverted trapezoidal shape. The guide grooves are formed using a well-known method such as dry etching using glass or after spin-coding an ultraviolet curable resin on a glass substrate.
A method of pressing this onto a stun I with a guide groove, irradiating it with ultraviolet rays to harden the resin, and transferring the guide groove, the so-called 2P method (phcto pclymer method)
, an injection molding method using resin, a 2P method, or the like.

この発明にお;する案内溝は、0.1−10μmの開口
径K[第1図参照3を有す乙。
The guide groove according to the present invention has an opening diameter K of 0.1 to 10 μm [see Figure 1 3].

この発明にお;斗る薄膜層としては、 (1)第1保護層上に、全面に、熱伝導率の高い記録層
としての磁性層、第2保護層および熱伝導率の高い反射
層か順次積層されてなる4層構造膜(第7図参照)や (11)第1保護層上に、全面に磁性層および第2保護
層を順次積層してなる3層構造膜のものが好ましいもの
として挙げられる。
In this invention, the thin film layer includes: (1) a magnetic layer as a recording layer with high thermal conductivity, a second protective layer, and a reflective layer with high thermal conductivity on the entire surface of the first protective layer; A four-layer structure film (see Figure 7) in which the film is sequentially laminated or (11) a three-layer structure film in which a magnetic layer and a second protective layer are sequentially laminated over the entire surface on the first protective layer is preferable. It is mentioned as.

そして、磁性層の稠7(積層方向の厚さ)GII第7第
7照参照]0,01〜028mか好ましく、薄膜層の膜
厚H0第1図参照]は0,02〜0.3μmが好ましく
、0.03μmかより好まし−)。
The thickness of the magnetic layer (thickness in the stacking direction) (see GII 7th Reference) is preferably 0.01 to 0.28 m, and the thickness H0 of the thin film layer (see Figure 1) is 0.02 to 0.3 μm. preferably 0.03 μm or more preferably -).

この発明では、まず、薄膜層が案内溝を含む基板上に、
全面に積層され、しかる後、傾斜側壁に積11された薄
膜層がドライエツチングに付される。
In this invention, first, on a substrate in which a thin film layer includes a guide groove,
After being laminated over the entire surface, the thin film layers deposited 11 on the sloped sidewalls are subjected to dry etching.

このドライエツチング法は、公知の方法が用いられ、例
えば、Ar’イオンを用いたドライエツチング法が挙げ
られろ。また、N2を用いたものやCF4を用いたドラ
イエツチング法も好ましいものとして挙げられる。
A known method is used for this dry etching method, such as a dry etching method using Ar' ions. In addition, dry etching methods using N2 and CF4 are also preferred.

Ar”イオンを用いた除去方法について説明する。A removal method using Ar'' ions will be explained.

第2図において、基板上に薄膜層を作製したもの(符号
14て示す)を図、FRで示す矢印方向に回転可能な基
板ホルダ13に取付け、ホルダ13を回転さ仕ながら、
基板に対して斜め方向(図示Aで示す方向)より加速さ
れたAr’イオンを照射する− 第3図は、第2図を立体的に見rこらのであるが、Ar
”イオンを照射するのは符号18.19で示した照射部
分である。x、y、zは直交座標系で基板及び基板ホル
ダ13はx−y面内にありAr’イオンが照射されてい
る方向はX−Z面内にある。照射部分18,19は照射
初期にはX軸上に乗っており、照射初期には、第4図に
示すようにAr”イオンが照射されている方向に向いて
いる面が効率的にエツチングされ、領域e、Hにある薄
膜層29.31 [第1図参照3が除去される。第4図
において、図示Bで示す矢印方向は基板lの中心方向を
示し、図示Cで示す矢印方向は外周方向を示している。
In FIG. 2, a thin film layer formed on a substrate (indicated by reference numeral 14) is attached to a substrate holder 13 which can be rotated in the direction of the arrow shown by FR in the figure, and while rotating the holder 13,
The substrate is irradiated with accelerated Ar' ions in an oblique direction (direction indicated by A in the figure).
``Ion irradiation is done at the irradiation part indicated by reference numeral 18.19. x, y, z are orthogonal coordinates, and the substrate and substrate holder 13 are in the x-y plane and are irradiated with Ar' ions. The direction is within the X-Z plane.The irradiated parts 18 and 19 are on the X axis at the beginning of the irradiation, and at the beginning of the irradiation, as shown in FIG. The facing side is effectively etched and the thin film layers 29, 31 [see 3 in FIG. 1] in areas e and H are removed. In FIG. 4, the arrow direction indicated by B indicates the center direction of the substrate l, and the arrow direction indicated by C indicates the outer circumferential direction.

その後、基板ホルダ13が半回転り、て初期に符号18
の位置にあった部分が19の位置にくると、今後はA 
r ”イオンの照射か基板の外周方向からなされるので
第5図に示す様に領域f、hにあっに薄膜層30.32
1’第9図参照]か効率的にエツチングされて除去され
る。この様に基板を回転さ仕ることで基板全域に渡って
案内溝側面に形成され几4@層が除去されることになる
Thereafter, the substrate holder 13 rotates half a turn, and initially marks 18.
When the part that was at position 19 comes to position, it will become A from now on.
Since the ion irradiation is performed from the outer circumferential direction of the substrate, a thin film layer 30.32 is formed in the regions f and h as shown in FIG.
1' (see FIG. 9) are efficiently etched and removed. By rotating the substrate in this manner, the layer 4 formed on the side surface of the guide groove is removed over the entire area of the substrate.

二の発明において、実質的に熱伝導率の高い磁性層とは
、例えば記録時、065μm径のレーザ光によって磁性
層をキュリー点近くまて昇温しL際に、所望の外部磁場
を印加することて昇温されr:部分の磁化が外部磁iA
の方向に揃わすことか可能な大きさの熱伝導率を有する
磁性層を意味し、0.1〜1、OJ/aIIl/deg
/seeの熱伝導率を有するものが好ましい。
In the second invention, a magnetic layer having substantially high thermal conductivity means, for example, that during recording, the temperature of the magnetic layer is raised to near the Curie point by a laser beam with a diameter of 0.065 μm, and then a desired external magnetic field is applied. The temperature is raised and the magnetization of the r: portion becomes external magnetism iA.
0.1 to 1, OJ/aIIl/deg.
A material having a thermal conductivity of /see is preferable.

(ホ)実施例 以下図に示す実施例に基づいてこの発明を詳述する。な
おこれによってこの発明は限定を受けるものではない。
(e) Examples The present invention will be described in detail below based on examples shown in the drawings. Note that this invention is not limited by this.

第1図において、光磁気メモリ素子は、ポリカーボネー
ト基板l上に、上方開口へ向かうにつれ幅広の形状の傾
斜側壁39,40.41.42を有する案内溝50が形
成され、薄膜層2が領域p。
In FIG. 1, the magneto-optical memory element has a guide groove 50 formed on a polycarbonate substrate l, which has sloped side walls 39, 40, 41, and 42 that become wider toward the upper opening, and a thin film layer 2 in a region p. .

qにおける案内溝50の底壁上と、領域1.m。q and on the bottom wall of the guide groove 50 in area 1.q. m.

nにおける基板上面に形成されている。It is formed on the upper surface of the substrate at point n.

この実施例のものは上記構成を有するから、領域1.m
、nに記録を行った場合、領域e、f。
Since this example has the above configuration, area 1. m
, n, areas e and f.

g、hに熱伝導率の大きい金属薄膜層が無い為、領域1
.m、nに記録した情報が領域p、qに記録されること
は無い。
Area 1 because there is no metal thin film layer with high thermal conductivity in g and h.
.. Information recorded in areas m and n is never recorded in areas p and q.

これにより領域mの情報を読む際にはレーザ光の径か領
域mより大きくともクロストークは大きく低減されるこ
ととなり再生信号の高品質化が図れる。
As a result, when reading information in area m, crosstalk is greatly reduced even if the diameter of the laser beam is larger than area m, and the quality of the reproduced signal can be improved.

なお、基板として射出成形法により案内溝を形成したポ
リカーボネート基板を用い、保護層をAIN、記録層を
DyFeCo、反射層にはAtをそれぞれRFスパッタ
リングにより形成し、エポキシアクリレート系樹脂をバ
ックコート層3として形成し、第1図に示す構造をもつ
光磁気ディスクを作製し、同じ材料を用いて第9図に示
す構造をもつ従来の媒体と比較した。
A polycarbonate substrate with guide grooves formed by injection molding was used as the substrate, a protective layer of AIN, a recording layer of DyFeCo, and a reflective layer of At were formed by RF sputtering, and an epoxy acrylate resin was formed as a back coat layer 3. A magneto-optical disk having the structure shown in FIG. 1 was prepared and compared with a conventional medium having the structure shown in FIG. 9 using the same material.

すなわち、ディスク回転数3600rpm、記録時のレ
ーザPower 7 mV、再生のレーザパワー1.5
mV、レーザ光波長780no+、 NA≦0.55と
して磁界変調による記録を行った。
That is, the disc rotation speed was 3600 rpm, the laser power was 7 mV during recording, and the laser power was 1.5 during playback.
Recording was performed by magnetic field modulation at mV, laser beam wavelength of 780no+, and NA≦0.55.

第6図は案内溝を上から見た図であるがクロストークの
大きさは、中央のトランク2.25に0.894mビッ
ト長の記録を行い、その隣接トラック2.24および2
.26に2.37μmビット長の記録を行った後トラッ
ク2.25を読んで再生信号中に混入するトラック2.
24および2.26の信号の大きさで評価しr二。表1
はその結果である。
Figure 6 is a view of the guide groove viewed from above.
.. After recording a bit length of 2.37 μm on track 2.26, track 2.25 is read and mixed into the reproduced signal.
Evaluated with signal magnitudes of 24 and 2.26 r. Table 1
is the result.

表1から、クロストークか本実施例のらのの方か4dB
減少していることが分かる。すなわち、再生信号の高品
質化がなされ、リードエラーの確率が減少している。
From Table 1, it can be seen that the crosstalk is 4 dB.
It can be seen that it is decreasing. That is, the quality of the reproduced signal is improved and the probability of read errors is reduced.

(へ)発明の効果 本発明に係る光磁気メモリ素子及びその作製法は以上の
様に、案内溝側面に形成された薄膜層を除去することに
より、記録の際に熱伝導の起こる領域を、記録するトラ
ック上だけとするものである。これにより再生信号中に
隣接トラックの信号が混入するクロストークを大幅に低
減することができ、再生信号の高品質化及び素子の高信
頼性を図ることができる効果がある。
(F) Effects of the Invention As described above, the magneto-optical memory element and the method for manufacturing the same according to the present invention reduce the area where heat conduction occurs during recording by removing the thin film layer formed on the side surface of the guide groove. Only on the track to be recorded. As a result, crosstalk caused by signals from adjacent tracks being mixed into the reproduced signal can be significantly reduced, and this has the effect of increasing the quality of the reproduced signal and the reliability of the device.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例に係る光磁気メモリ素子の要
部構成説明図、第2図〜第5図は上記実施例における製
造工程説明図、第6図は上記実施例における動作を示す
説明図、第7図は上記実施例および従来例における要部
構成説明図、第8図は記録層の保磁力の温度依存性を示
す特性図、第9図は従来例を示す要部構成説明図である
。 ■・−・・・基板、2・・・・・・薄膜層、39.40
.41.42・・・・・案内溝の傾斜側壁、50・−・
・案内溝、 1、m、n・・・・・トラック領域、 p、q−・・案内溝領域、 e、f、g、h・・・・・案内溝の傾斜側壁領域。
FIG. 1 is an explanatory diagram of the main part configuration of a magneto-optical memory element according to an embodiment of the present invention, FIGS. 2 to 5 are illustrations of manufacturing steps in the above embodiment, and FIG. 6 is an illustration of the operation of the above embodiment. FIG. 7 is an explanatory diagram of the main part configuration in the above embodiment and conventional example, FIG. 8 is a characteristic diagram showing the temperature dependence of the coercive force of the recording layer, and FIG. 9 is a main part configuration showing the conventional example. It is an explanatory diagram. ■---Substrate, 2---Thin film layer, 39.40
.. 41.42... Slanted side wall of guide groove, 50...
-Guide groove, 1, m, n...Track area, p, q-...Guide groove area, e, f, g, h......Incline side wall area of the guide groove.

Claims (1)

【特許請求の範囲】 1、複数の案内溝を有する基板上に実質的に熱伝導率の
高い磁性層を含む薄膜層を有し、その磁性層へ光を照射
することにより情報の記録、再生並びに消去がおこなわ
れる光磁気メモリ素子において、 底面から上方開口へ向かって実質的に幅広の傾斜側壁を
有する案内溝と、その案内溝を含む基板上で、かつ案内
溝の上記傾斜側壁を除く全面に積層された薄膜層とから
なる光磁気メモリ素子。 2、複数の案内溝を有する基板上に実質的に熱伝導率の
高い磁性層を含む薄膜層を形成し、その磁性層へ光を照
射することにより情報の記録、再生並びに消去をおこな
う光磁気メモリ素子を作製するに際して、 (i)基板上に案内溝を形成し、 (ii)その案内溝を含む基板上に、全面に、実質的に
熱伝導率の高い磁性層を含む薄膜層を積層し、 (iii)しかる後、ドライエッチングによって案内溝
の傾斜側壁に積層された薄膜層を除去することを特徴と
する光磁気メモリ素子の作製方法。
[Claims] 1. A thin film layer including a magnetic layer with substantially high thermal conductivity is provided on a substrate having a plurality of guide grooves, and information is recorded and reproduced by irradiating the magnetic layer with light. In addition, in a magneto-optical memory element in which erasing is performed, a guide groove having a substantially wide inclined side wall from the bottom surface toward the upper opening, and a substrate including the guide groove and the entire surface of the guide groove excluding the inclined side wall. A magneto-optical memory element consisting of a thin film layer laminated on a. 2. Magneto-optical technology, in which a thin film layer containing a magnetic layer with substantially high thermal conductivity is formed on a substrate with multiple guide grooves, and information is recorded, reproduced, and erased by irradiating the magnetic layer with light. When manufacturing a memory element, (i) a guide groove is formed on a substrate, and (ii) a thin film layer including a magnetic layer with substantially high thermal conductivity is laminated over the entire surface of the substrate including the guide groove. (iii) A method for manufacturing a magneto-optical memory element, comprising: thereafter removing the thin film layer laminated on the inclined sidewalls of the guide groove by dry etching.
JP11612490A 1990-05-02 1990-05-02 Magneto-optical memory element and production thereof Pending JPH0413253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11612490A JPH0413253A (en) 1990-05-02 1990-05-02 Magneto-optical memory element and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11612490A JPH0413253A (en) 1990-05-02 1990-05-02 Magneto-optical memory element and production thereof

Publications (1)

Publication Number Publication Date
JPH0413253A true JPH0413253A (en) 1992-01-17

Family

ID=14679297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11612490A Pending JPH0413253A (en) 1990-05-02 1990-05-02 Magneto-optical memory element and production thereof

Country Status (1)

Country Link
JP (1) JPH0413253A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999026236A2 (en) * 1997-11-17 1999-05-27 Seagate Technology, Inc. Method for thermal crosstalk control on optical media
US6261707B1 (en) 1992-11-06 2001-07-17 Sharp Kabushiki Kaisha Magneto-optical recording medium and recording and reproducing method and optical head designed for the magneto-optical recording medium
EP1158509A2 (en) * 1993-04-02 2001-11-28 Canon Kabushiki Kaisha Magneto-optical recording method
US6665235B2 (en) 1992-11-06 2003-12-16 Sharp Kabushiki Kaisha Magneto-optical recording medium and recording and reproducing method and optical head designed for the magneto-optical recording medium

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261707B1 (en) 1992-11-06 2001-07-17 Sharp Kabushiki Kaisha Magneto-optical recording medium and recording and reproducing method and optical head designed for the magneto-optical recording medium
US6483785B1 (en) 1992-11-06 2002-11-19 Sharp Kk Magneto-optical recording method using the relation of beam diameter and an aperture of converging lens
US6665235B2 (en) 1992-11-06 2003-12-16 Sharp Kabushiki Kaisha Magneto-optical recording medium and recording and reproducing method and optical head designed for the magneto-optical recording medium
EP1158509A2 (en) * 1993-04-02 2001-11-28 Canon Kabushiki Kaisha Magneto-optical recording method
EP1158509A3 (en) * 1993-04-02 2002-01-02 Canon Kabushiki Kaisha Magneto-optical recording method
US6399174B1 (en) 1993-04-02 2002-06-04 Canon Kabushiki Kaisha Magnetooptical recording medium on which high-density information can be recorded and method of reproducing the recorded information
WO1999026236A2 (en) * 1997-11-17 1999-05-27 Seagate Technology, Inc. Method for thermal crosstalk control on optical media
WO1999026236A3 (en) * 1997-11-17 1999-09-02 Seagate Technology Method for thermal crosstalk control on optical media

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