JPH0412355A - High pay transmittable dustproof film, production thereof and dustproof body - Google Patents

High pay transmittable dustproof film, production thereof and dustproof body

Info

Publication number
JPH0412355A
JPH0412355A JP2115604A JP11560490A JPH0412355A JP H0412355 A JPH0412355 A JP H0412355A JP 2115604 A JP2115604 A JP 2115604A JP 11560490 A JP11560490 A JP 11560490A JP H0412355 A JPH0412355 A JP H0412355A
Authority
JP
Japan
Prior art keywords
film
dustproof
perfluoro
light transmittance
amorphous fluororesin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2115604A
Other languages
Japanese (ja)
Inventor
Mayumi Kawasaki
川崎 まゆみ
Tetsuya Miyazaki
哲也 宮崎
Hideo Hama
秀雄 浜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Petrochemical Industries Ltd
Original Assignee
Mitsui Petrochemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Petrochemical Industries Ltd filed Critical Mitsui Petrochemical Industries Ltd
Priority to JP2115604A priority Critical patent/JPH0412355A/en
Publication of JPH0412355A publication Critical patent/JPH0412355A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obviate the generation of photodecomposition in spite of irradiation with short-wavelength light over a long period of time and to obtain a high ray transmissivity by using a perfluoro-amorphous fluorinated resin as a film forming component. CONSTITUTION:The amorphous fluorsinated resin in which the hydrogen atoms are all substd. with fluorine resins is usable as the perfluoro-amorphous fluorinated resin forming a perfluoro-amorphous fluorinated resin film 6. The amorphous fluororesins in which at least one repeating units from a cyclic structure are more preferable usable. The repeating units thereof may contain oxygen atoms or sulfur atoms, etc., in addition to the carbon atoms and fluorine atoms. The high ray transmittable dustproof film which obviates the generation of the photodecompositin in spite of the irradiation with the light of the short wavelength, such as not only (g) and (i) rays but excimer laser as well, and has the high light transmittance is obtd. in this way.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、IC,LSI等の半導体素子の製造工程にお
けるフォトリソグラフィ工程で使用するフォトマスクや
レチクル等(以下単にマスク等という)に、塵埃等の異
物が付着することを防止するために使用する防塵膜、そ
の製造方法および防塵体に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is aimed at preventing dust from being removed from a photomask, reticle, etc. (hereinafter simply referred to as a mask, etc.) used in a photolithography process in the manufacturing process of semiconductor devices such as ICs and LSIs. The present invention relates to a dustproof film used to prevent foreign matter from adhering to the present invention, a method for manufacturing the same, and a dustproof body.

〔従来の技術〕[Conventional technology]

フォトリソグラフィ工程では、ガラス板表面にクロム等
の蒸着膜で回路パターンを形成したマスり等を使用し、
その回路パターンをレジストを塗布したシリコンウェハ
ー上に転写する作業が行われている。この工程ではマス
ク等上の回路パターンに塵埃等の異物が付着した状態で
露光が行われると、ウェハー上にも上記異物が転写され
、不良製品となる。ことに前記露光をステッパーで行う
場合には、ウェハー上に形成される全てのチップが不良
となる可能性が高くなり、マスク等の回路パターンへの
異物の付着は大きな問題である。この問題を解消するた
め、近年、マスク等のマスク基板の片面または両面に透
明な光線透過性防塵膜(ペリクル膜)を適当な間隔を置
いて配置する防塵体(ペリクル)が使用されている。
In the photolithography process, a mask is used to form a circuit pattern on the surface of a glass plate using a vapor-deposited film such as chromium.
Work is underway to transfer the circuit pattern onto a silicon wafer coated with resist. In this process, if exposure is performed with foreign matter such as dust attached to a circuit pattern on a mask or the like, the foreign matter will also be transferred onto the wafer, resulting in a defective product. In particular, when the exposure is performed using a stepper, there is a high possibility that all the chips formed on the wafer will be defective, and adhesion of foreign matter to circuit patterns such as masks is a big problem. In order to solve this problem, in recent years, a dustproof body (pellicle) has been used in which a transparent light-transmitting dustproof film (pellicle film) is arranged at appropriate intervals on one or both sides of a mask substrate such as a mask.

この防塵体は、一般にアルミニウム製の保持枠の一側面
にニトロセルロース等からなる有機物の透明な光線透過
性防塵膜を張設したもので、他側端面に両面粘着テープ
を貼着してマスク等のマスク基板上に取付けられるよう
になっている。これによれば、外部からの異物の侵入を
防ぐことができ、また仮に膜上に異物が付着してもウェ
ハー上には転写されず、半導体素子製造時の歩留りが向
上する。
This dustproof body is generally made of an aluminum holding frame with a transparent, light-transmitting dustproof film made of organic material such as nitrocellulose stretched on one side of the frame, and a double-sided adhesive tape is attached to the other side of the frame to make masks, etc. It is designed to be mounted on a mask substrate. According to this, intrusion of foreign matter from the outside can be prevented, and even if foreign matter adheres to the film, it will not be transferred onto the wafer, improving the yield in manufacturing semiconductor devices.

ところが半導体素子の集積度の向上に伴い、露光時の光
線がg線(436nm)からi線(365nm)、さら
にエキシマレーザ−(KrF: 248nm、 ArF
: 193nm)へと、短波長へシフトしているため、
従来のニトロセルロース等の有機物からなる光線透過性
防塵膜は光分解を起し、実用に耐えないという問題点が
ある。
However, as the degree of integration of semiconductor devices improves, the light beam used for exposure has changed from g-line (436 nm) to i-line (365 nm), and even excimer laser (KrF: 248 nm, ArF).
: 193 nm).
Conventional light-transmitting dust-proof films made of organic substances such as nitrocellulose have the problem of photodegradation and impractical use.

このような問題点を解決するため、合成石英、石英、蛍
石等の無機物からなる光線透過性防塵膜も提案されてい
る(特開昭62−288842号、同63−6553号
)。 しかし上記無機物から薄膜を製膜する場合、有機
物から薄膜を製膜する場合に比べて単独膜化が難しいと
いう問題点がある。
In order to solve these problems, light-transmitting dustproof films made of inorganic substances such as synthetic quartz, quartz, and fluorite have also been proposed (Japanese Patent Laid-Open Nos. 62-288842 and 63-6553). However, when forming a thin film from the above-mentioned inorganic material, there is a problem that it is difficult to form a single film compared to when forming a thin film from an organic material.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

本発明の目的は、上記のような問題点を解決するため、
従来のg線、i線はもとより、エキシマレーザ−等の短
波長光を長期間照射しても光分解を起さず、かつ高い光
線透過率を有する高光線透一4= 過性防塵膜を提供することである。
The purpose of the present invention is to solve the above problems,
In addition to the conventional G-line and I-line, it does not cause photodecomposition even when irradiated with short wavelength light such as excimer laser for a long period of time, and has a high light transmittance. It is to provide.

また本発明の他の目的は、上記のような優れた性質を有
する高光線透過性防塵膜を短時間で簡単に製造する方法
を提案することである。
Another object of the present invention is to propose a method for easily producing a high light transmittance dustproof film having the above-mentioned excellent properties in a short time.

さらに本発明の別の目的は、上記のような優れた性質を
有する高光線透過性防塵膜からなる防塵体を提供するこ
とである。
Furthermore, another object of the present invention is to provide a dustproof body made of a highly light-transparent dustproof film having the above-mentioned excellent properties.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は次の高光線透過性防塵膜、その製造方法および
防塵体である。
The present invention provides the following high light transmittance dustproof film, method for producing the same, and dustproof body.

(1)パーフルオロ非晶質フッ素樹脂からなる高光線透
過性防塵膜。
(1) High light transmittance dustproof film made of perfluoro amorphous fluororesin.

(2) 190ないし500nmの光を平均光線透過率
で85%以上透過する上記(1)記載の高光線透過性防
塵膜。
(2) The high light transmittance dustproof film according to the above (1), which transmits 85% or more of light of 190 to 500 nm in average light transmittance.

(3)膜厚が0.2ないし10μmである上記(1)記
載の高光線透過性防塵膜。
(3) The high light transmittance dustproof film according to (1) above, having a film thickness of 0.2 to 10 μm.

(4)膜形成成分の溶液を基板上へ供給し、前記基板を
回転して膜を形成する方法において、前記膜形成成分と
してパーフルオロ非晶質フッ素樹脂を使用することを特
徴とする上記(1)記載の高光線透過性防塵膜の製造方
法。
(4) A method for forming a film by supplying a solution of a film-forming component onto a substrate and rotating the substrate, characterized in that a perfluoro amorphous fluororesin is used as the film-forming component ( 1) The method for producing the high light transmittance dustproof film described above.

(5)基板を膜形成成分の溶液中に浸漬した後、引上げ
て膜を形成する方法において、前記膜形成成分としてパ
ーフルオロ非晶質フッ素樹脂を使用することを特徴とす
る上記(1)記載の高光線透過性防塵膜の製造方法。
(5) In the method of forming a film by immersing a substrate in a solution of a film-forming component and then pulling it up, the method described in (1) above, characterized in that a perfluoro amorphous fluororesin is used as the film-forming component. A method for producing a high light transmittance dustproof film.

(6)膜形成成分の溶液を液面上に展開して膜を形成す
る方法において、前記膜形成成分としてパーフルオロ非
晶質フッ素樹脂を使用することを特徴とする上記(1)
記載の高光線透過性防塵膜の製造方法。
(6) A method of forming a film by spreading a solution of a film-forming component on a liquid surface, characterized in that a perfluoro amorphous fluororesin is used as the film-forming component (1) above.
The method for producing the highly light-transparent dustproof film described above.

(7)上記(1)ないしく3)のいずれかに記載の高光
線透過性防塵膜と保持枠とからなる防塵体。
(7) A dustproof body comprising the highly light-transparent dustproof film according to any one of (1) to 3) above and a holding frame.

以下、本発明の高光線透過性防塵膜およびこの防塵膜を
保持枠に張設した防塵体を図面を用いて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A highly light-transparent dust-proof film of the present invention and a dust-proof body in which this dust-proof film is stretched over a holding frame will be described below with reference to the drawings.

第1図は本発明の防塵体の一例を示す断面図である。図
において、1は防塵体で、保持枠2の一側面に高光線透
過性防塵膜3が張設され、それとは反対側の側面は両面
粘着テープ4等によりマスク等のマスク基板5に装着さ
れるようになっている。このような構成の防塵体1は、
半導体素子の製造工程でマスク基板5上に塵埃等の異物
が付着するのを防いでいる。
FIG. 1 is a sectional view showing an example of the dustproof body of the present invention. In the figure, reference numeral 1 denotes a dustproof body, and a highly light-transparent dustproof film 3 is stretched on one side of a holding frame 2, and the opposite side is attached to a mask substrate 5 of a mask or the like with double-sided adhesive tape 4 or the like. It has become so. The dustproof body 1 having such a configuration is
This prevents foreign matter such as dust from adhering to the mask substrate 5 during the manufacturing process of semiconductor elements.

第2図は高光線透過性防塵膜3の一部の断面図である。FIG. 2 is a cross-sectional view of a part of the high light transmittance dustproof film 3.

この高光線透過性防塵膜3は、パーフルオロ非晶質フッ
素樹脂膜6の単独膜からなるが、場合によってはパーフ
ルオロ非晶質フッ素樹脂膜6の上に反射防止層を積層し
てもよい。
This high light transmittance dustproof film 3 is composed of a single perfluoro amorphous fluororesin film 6, but in some cases, an antireflection layer may be laminated on the perfluoro amorphous fluororesin film 6. .

パーフルオロ非晶質フッ素樹脂膜6を形成するパーフル
オロ非晶質フッ素樹脂としては、水素原子が全てフッ素
原子に置換された非晶質のフッ素樹脂が使用できるが、
繰返し単位の少なくとも1種が環状構造を形成している
ものが好ましく使用できる。これらの繰返し単位は炭素
原子およびフッ素原子の他に酸素原子またはイオウ原子
などを含有していてもよい。
As the perfluoro amorphous fluororesin forming the perfluoro amorphous fluororesin film 6, an amorphous fluororesin in which all hydrogen atoms are replaced with fluorine atoms can be used.
Those in which at least one type of repeating unit forms a cyclic structure can be preferably used. These repeating units may contain oxygen atoms, sulfur atoms, etc. in addition to carbon atoms and fluorine atoms.

このようなパーフルオロ非晶質フッ素樹脂としては、例
えば特開平1−131214号、特開平1−13121
5号、EP 303298A2、EP 303292A
2に開示されているような、下記繰返し単位(1)ない
し〔■〕で表わされる繰返し単位からなる群から選ばれ
る1種または2種以上の繰返し単位を有する重合体また
は共重合体があげられる。
Examples of such perfluoro amorphous fluororesin include JP-A-1-131214 and JP-A-1-13121.
No. 5, EP 303298A2, EP 303292A
Examples include polymers or copolymers having one or more types of repeating units selected from the group consisting of repeating units represented by the following repeating units (1) to [■], as disclosed in 2. .

し1’3  シl”3 またパーフルオロ非晶質フッ素樹脂としては、前記繰返
し単位(1)ないしくV)で表わされる繰返し単位の他
に、下記繰返し単位(VI)で表わされる繰返し単位が
共重合しているものも好ましく使用できる(例えば特公
昭63−18964号に開示されている共重合体)。
1'3 Sil''3 In addition to the repeating units represented by the above-mentioned repeating units (1) to V), the perfluoro amorphous fluororesin also includes a repeating unit represented by the following repeating unit (VI). Copolymers can also be preferably used (for example, the copolymers disclosed in Japanese Patent Publication No. 18964/1983).

−(−CF.−CFA←         ・・・[V
I](式中、Aはフッ素原子、−0CF, CF2CF
,または−OCF2CF (CF3)OCF, CF2
SO2Fを示す。)パーフルオロ非晶質フッ素樹脂の具
体的なものとしては、パーフルオロ2,2−ジメチル−
1,3−ジオキソールとテトラブルオロエチレンとの共
重合体、繰返し単位(1)からなる重合体、繰返し単位
(II)からなる重合体、繰返し単位(III)からな
る重合体、繰返し単位(IV)からなる重合体、繰返し
単位(V)からなる重合体、繰返し単位(1)と(II
)とからなる共重合体、繰返し単位(Ilと(m)とか
らなる共重合体、繰返し単位[1]と[IV]とからな
る共重合体、繰返し単位[1)と[11]と(IV)と
からなる共重合体、繰返し単位(1)と〔■〕(ここで
Aはフッ素原子)とからなる共重合体、繰返し単位(I
I)と(m)とからなる共重合体、繰返し単位(n)と
(IV)とからなる共重合体、繰返し単位(11)と〔
■〕(ここでAはフッ素原子)とからなる共重合体、繰
返し単位(n)と(IV)と〔■〕(ここでAはフッ素
原子)とからなる共重合体、繰返し単位(If)と(I
V)と[VI](ここでAは一〇CF. CF (CF
3)OCF, CF2So, F)とからなる共重合体
、繰返し単位(I)と〔■〕(ここでAは一OCF, 
CF. CF3)とからなる共重合体、およびこれらの
重合体または共重合体に、製造原料となるCF2=CF
O (CF. ) 、CF=CF. (ここでnは1ま
たは2を示す)等から誘導された誘導体が共重合したも
の等が例示できる。
-(-CF.-CFA← ・・・[V
I] (wherein A is a fluorine atom, -0CF, CF2CF
, or -OCF2CF (CF3)OCF, CF2
Indicates SO2F. ) Specific examples of perfluoro amorphous fluororesin include perfluoro 2,2-dimethyl-
Copolymer of 1,3-dioxole and tetrafluoroethylene, polymer consisting of repeating unit (1), polymer consisting of repeating unit (II), polymer consisting of repeating unit (III), repeating unit (IV) ), polymers consisting of repeating units (V), repeating units (1) and (II
), a copolymer consisting of repeating units (Il and (m)), a copolymer consisting of repeating units [1] and [IV], a copolymer consisting of repeating units [1] and [11], and ( A copolymer consisting of the repeating unit (1) and [■] (where A is a fluorine atom), a copolymer consisting of the repeating unit (I
A copolymer consisting of I) and (m), a copolymer consisting of repeating units (n) and (IV), a copolymer consisting of repeating units (11) and [
A copolymer consisting of [■] (where A is a fluorine atom), a repeating unit (n), a copolymer consisting of (IV), and [■] (where A is a fluorine atom), a repeating unit (If) and (I
V) and [VI] (where A is 10 CF. CF (CF
3) Copolymer consisting of OCF, CF2So, F), repeating unit (I) and [■] (where A is one OCF,
C.F. CF3), and these polymers or copolymers contain CF2=CF, which is a raw material for production.
O (CF.), CF=CF. (Here, n represents 1 or 2) etc. can be exemplified by copolymerization of derivatives derived from the above.

パーフルオロ非晶質フッ素樹脂としては、繰返し単位[
1)ないしくVI)の他に、本発明の目的を損なわない
範囲で、他の共重合可能なモノマーが共重合したものを
使用することもできる。
As a perfluoro amorphous fluororesin, the repeating unit [
In addition to 1) to VI), copolymerizable monomers with other copolymerizable monomers can also be used as long as the purpose of the present invention is not impaired.

このようなパーフルオロ非晶質フッ素樹脂は、例えばC
F2=CFO (CF2)、CF=CF. (ここでn
は1または2を示す)、パーフルオロ2,2−ジメチル
−1,3−ジオキソール、CF2=CFA (ここでA
は前記と同じものを示す)等をラジカル重合させること
により製造することができる。
Such perfluoro amorphous fluororesin is, for example, C
F2=CFO (CF2), CF=CF. (Here n
represents 1 or 2), perfluoro 2,2-dimethyl-1,3-dioxole, CF2=CFA (where A
(indicates the same thing as above), etc. can be produced by radical polymerization.

またパーフルオロ非晶質フッ素樹脂としては、サイトツ
ブ(CYTOP、旭硝子(株)製、商標)、テフロンA
F1600(TEFLON AF1600、デュポン社
製、商標)、テフロンAF2400 (TEFLON 
AF2400、デュポン社製、商標)等の市販品も使用
できる。
In addition, examples of the perfluoro amorphous fluororesin include CYTOP (manufactured by Asahi Glass Co., Ltd., trademark), Teflon A
F1600 (TEFLON AF1600, manufactured by DuPont, trademark), Teflon AF2400 (TEFLON
Commercially available products such as AF2400 (manufactured by DuPont, trademark) can also be used.

上記のようなパーフルオロ非晶質フッ素樹脂は、パーフ
ルオロトリブチルアミン(CT−3OLV、旭硝子(株
)製、商標)、パーフルオロ(2−ブチルテトラヒドロ
フラン)(フロリナートFC75,住友スリーエム(株
)製、商標)、トリクロロトリフルオロエタン、パーフ
ルオロベンゼン等の溶媒に溶解するので、従来の有機質
膜とほぼ同様の工程で容易に製膜することができる。
The above-mentioned perfluoro amorphous fluororesins include perfluorotributylamine (CT-3OLV, manufactured by Asahi Glass Co., Ltd., trademark), perfluoro(2-butyltetrahydrofuran) (Florinart FC75, manufactured by Sumitomo 3M Co., Ltd.), Trademark), trichlorotrifluoroethane, perfluorobenzene, and other solvents, it can be easily formed into a film using almost the same process as conventional organic films.

パーフルオロ非晶質フッ素樹脂からなる薄膜は1、可視
光線はもとより、エキシマレーザ−等の短波長でも光線
透過性がよく、吸収もほとんどないので、長時間の光照
射に対しても光分解を起さず、かつ高い光線透過率を有
する。
Thin films made of perfluoro amorphous fluororesin 1 have good light transmittance not only for visible light but also for short wavelengths such as excimer lasers, and have almost no absorption, so they are resistant to photodegradation even when exposed to long-term light irradiation. It has high light transmittance.

高光線透過性防塵膜3を構成するパーフルオロ非晶質フ
ッ素樹脂膜6の厚さは好ましくは0.2ないし10μm
mであり、高光線透過性防塵膜3の光線透過率は、19
0ないし500nmの光を平均光線透過率で85%以上
透過するものである。ここで平均光線透過率とは、19
0ないし500nmの間で起る光線透過率の干渉波の山
部と谷部を同数とり平均した値である。
The thickness of the perfluoro amorphous fluororesin film 6 constituting the high light transmittance dustproof film 3 is preferably 0.2 to 10 μm.
m, and the light transmittance of the high light transmittance dustproof film 3 is 19
It transmits 85% or more of light with an average light transmittance of 0 to 500 nm. Here, the average light transmittance is 19
This is the average value of the same number of peaks and valleys of interference waves of light transmittance occurring between 0 and 500 nm.

パーフルオロ非晶質フッ素樹脂膜6の厚さを0.2ない
し10声とすることにより、取扱いが容易な強度を有し
、しかも露光時の収差が小さい防塵膜が得られる。
By setting the thickness of the perfluoro amorphous fluororesin film 6 to 0.2 to 10 tones, it is possible to obtain a dustproof film that is strong enough to be easily handled and has small aberrations during exposure.

パーフルオロ非晶質フッ素樹脂膜6の厚さは、露光に使
用する波長に対して透過率が高くなるように選択する。
The thickness of the perfluoro amorphous fluororesin film 6 is selected so that the transmittance is high for the wavelength used for exposure.

第2図(a)のように、高光線透過性防塵膜3がパーフ
ルオロ非晶質フッ素樹脂膜6の単独膜からなる場合、パ
ーフルオロ非晶質フッ素樹脂膜6の厚さをd□、屈折率
をn□、波長をλとした場合、(ただし、mは1以上の
整数) のとき反射が防止され、透過率が最高になる。例えばn
1=1.3の場合は、g線(436nm)の透過率を高
くするには、膜厚d1を例えば1.84μmとし、Kr
Fエキシマレーザ−(248nm)の透過率を高くする
には、膜厚d1を例えば1.05μmにする。
As shown in FIG. 2(a), when the high light transmittance dustproof film 3 is composed of a single perfluoro amorphous fluororesin film 6, the thickness of the perfluoro amorphous fluororesin film 6 is d□, When the refractive index is n□ and the wavelength is λ, reflection is prevented and the transmittance is the highest when m is an integer of 1 or more. For example, n
In the case of 1=1.3, in order to increase the transmittance of the g-line (436 nm), the film thickness d1 should be set to 1.84 μm, for example, and Kr
To increase the transmittance of F excimer laser (248 nm), the film thickness d1 is set to, for example, 1.05 μm.

本発明の高光線透過性防塵膜3には反射防止膜は必ずし
も必要ではないが、目的とする厚さのパーフルオロ非晶
質フッ素樹脂膜6が得られなかったために透過率が低下
するのを防いだり、あるいは波長の変化に対する透過率
の変動を防止するために、パーフルオロ非晶質フッ素樹
脂膜6の上に反射防止層7を積層形成してもよい。
Although an anti-reflection film is not necessarily required for the high light transmittance dustproof film 3 of the present invention, it is possible to prevent the transmittance from decreasing because the perfluoro amorphous fluororesin film 6 of the desired thickness cannot be obtained. An antireflection layer 7 may be laminated on the perfluoro amorphous fluororesin film 6 in order to prevent the change in transmittance due to changes in wavelength.

パーフルオロ非晶質フッ素樹脂膜6は、■清浄で平滑な
基板上にパーフルオロ非晶質フッ素樹脂溶液を供給し、
スピンナーを回転させ、回転製膜法により製膜する方法
、■パーフルオロ非晶質フッ素樹脂溶液中にガラス等の
清浄で平滑な面を有する基板を浸漬した後、この基板を
引上げて薄膜を形成する浸漬法により製膜する方法によ
り製造することができる。
The perfluoro amorphous fluororesin film 6 is made by: (1) supplying a perfluoro amorphous fluororesin solution onto a clean and smooth substrate;
A method of forming a film by rotating a spinner and using a rotary film forming method. ■ After immersing a substrate with a clean and smooth surface such as glass in a perfluoro amorphous fluororesin solution, the substrate is pulled up to form a thin film. It can be manufactured by a method of forming a film by a dipping method.

パーフルオロ非晶質フッ素樹脂溶液の濃度は通常0.5
〜15重量%、好ましくは1〜9重量%が望ましい。
The concentration of perfluoro amorphous fluororesin solution is usually 0.5
-15% by weight, preferably 1-9% by weight.

上記方法で用いる基板としては、例えばシリコンウェハ
、サファイヤウェハ等の無機単結晶基板;アルミニウム
、ニッケル等の金属基板;酸化アルミニウム、酸化マグ
ネシウム、石英ガラス、ソーダライムガラス等のセラミ
ックス基板;ポリカーボネート、アクリル樹脂等の有機
物基板;これら無機単結晶基板、金属基板、セラミック
ス基板、有機物基板上にCVD法、スピンコーティング
法等により金属薄膜、セラミックス薄膜、有機物薄膜を
形成した基板;金属等の枠上に張設されたアルミフォイ
ル等の金属膜、ニトロセルロース膜等の有機物膜などを
あげることができる。
Substrates used in the above method include, for example, inorganic single crystal substrates such as silicon wafers and sapphire wafers; metal substrates such as aluminum and nickel; ceramic substrates such as aluminum oxide, magnesium oxide, quartz glass, and soda lime glass; polycarbonate and acrylic resin. Organic substrates such as; substrates on which metal thin films, ceramic thin films, organic thin films are formed on these inorganic single crystal substrates, metal substrates, ceramic substrates, organic substrates by CVD, spin coating, etc.; stretched on metal frames, etc.; Examples include metal films such as aluminum foil and organic films such as nitrocellulose films.

上記のような方法で得た薄膜を熱風や赤外線照射等の手
段により乾燥し、次いで薄膜を基板から引離すことによ
りパーフルオロ非晶質フッ素樹脂からなる単独膜が得ら
れる。薄膜を基板から引離す方法としては、例えば水中
への浸漬、物理的剥離、エツチング液等による基板のエ
ツチング、溶剤等による基板の溶解、熱処理による基板
の分解等があげられる。なお水中へ浸漬して単独膜を得
る場合、超音波洗浄器等により振動を与えたり、温水を
用いることにより、剥離はいっそう容易になる。
The thin film obtained by the above method is dried by means such as hot air or infrared irradiation, and then the thin film is separated from the substrate to obtain a single film made of perfluoro amorphous fluororesin. Methods for separating the thin film from the substrate include, for example, immersion in water, physical peeling, etching of the substrate with an etching solution, dissolution of the substrate with a solvent, etc., and decomposition of the substrate by heat treatment. Note that when a single film is obtained by immersion in water, peeling can be made easier by applying vibration with an ultrasonic cleaner or the like or using hot water.

さらに上記■、■の方法の他にパーフルオロ非晶質フッ
素樹脂膜6を得る方法として、■パーフルオロ非晶質フ
ッ素樹脂溶液を、この溶液より比重および表面張力が大
きい液体の液面上に展開して薄膜を得る方法があげられ
る。このような液体としては、例えばアセチレンテトラ
ブロマイド(CI−IBr2C)IBrz )等をあげ
ることができる。このようにして得られた薄膜は液面上
からすくいあげて単独膜とする。
Furthermore, in addition to methods ① and ② above, as a method for obtaining the perfluoro amorphous fluororesin film 6, ② a perfluoro amorphous fluororesin solution is placed on the surface of a liquid having a higher specific gravity and surface tension than this solution. One method is to develop a thin film. Examples of such liquids include acetylene tetrabromide (CI-IBr2C)IBrz). The thin film thus obtained is scooped up from above the liquid surface to form a single film.

こうして得られるパーフルオロ非晶質フッ素樹脂膜6に
は必要により反射防止層7を積層し、保持枠2に張設し
て防塵体1が完成する。
If necessary, an antireflection layer 7 is laminated on the perfluoro amorphous fluororesin film 6 obtained in this manner, and the film is stretched over the holding frame 2 to complete the dustproof body 1.

〔作 用〕[For production]

高光線透過性防塵膜3を保持枠2に張設した防塵体1は
両面粘着テープ4等によりマスク等のマスク基板5に取
付けられ、露光時の塵埃等の異物の付着を防止する。露
光に際しては、パーフルオロ非晶質フッ素樹脂膜6はエ
キシマレーザ−等の短波長光により分解しないため、安
定して露光を行うことができ、透過率も高く、露光効率
が高くなる。
A dust-proof body 1 having a highly light-transmitting dust-proof film 3 stretched over a holding frame 2 is attached to a mask substrate 5 such as a mask using double-sided adhesive tape 4 or the like to prevent the adhesion of foreign matter such as dust during exposure. During exposure, since the perfluoro amorphous fluororesin film 6 is not decomposed by short wavelength light such as excimer laser, exposure can be performed stably, the transmittance is high, and the exposure efficiency is high.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、防塵膜の形成素材としてパーフルオロ
非晶質フッ素樹脂を用いるようにしたので、g線、i線
はもとより、エキシマレーザ−のような短波長の光を長
期間照射しても光分解を起さず、かつ高い透過率を有す
る高光線透過性防塵膜が得られる。
According to the present invention, perfluoro amorphous fluororesin is used as the material for forming the dustproof film, so it can be irradiated with short wavelength light such as excimer laser for a long period of time, as well as G-line and I-line. Also, a highly light-transmitting dustproof film that does not cause photodecomposition and has high transmittance can be obtained.

また本発明によれば、−上記のような高光線透過性防塵
膜を短時間で簡単に製造することができる。
Further, according to the present invention, the above-mentioned high light transmittance dustproof film can be easily produced in a short time.

さらに本発明によれば、上記のような優れた性質を有す
る高光線透過性防塵膜からなる防塵体が得られる。
Furthermore, according to the present invention, a dustproof body made of a highly light-transparent dustproof film having the above-mentioned excellent properties can be obtained.

〔実施例〕〔Example〕

実施例1 5.0すt%に調製したCYTOP(M硝子(株)製、
商標)のCT−5OLV (′M硝子(株)製、商標)
溶液を70mm X 70mmのガラス基板上に滴下し
、500rpm、20秒の条件で回転製膜法により膜を
形成した。この膜を、室温から約り℃/分の割合で昇温
し、約180℃で1時間乾燥させて放冷した後、蒸留水
に浸漬してガラス基板から剥離し、単独膜とした。この
ようにして得られた透明薄膜は屈折率が約1.3、膜厚
が約2.0/a、248nmにおける光線透過率は約9
6%であった。
Example 1 CYTOP (manufactured by M Glass Co., Ltd., prepared at 5.0 t%)
CT-5OLV (manufactured by 'M Glass Co., Ltd., trademark)
The solution was dropped onto a 70 mm x 70 mm glass substrate, and a film was formed by a rotary film forming method under the conditions of 500 rpm and 20 seconds. This film was heated from room temperature at a rate of about 0.degree. C./min, dried at about 180.degree. C. for 1 hour, allowed to cool, and then immersed in distilled water to be peeled off from the glass substrate to obtain a single film. The transparent thin film thus obtained has a refractive index of approximately 1.3, a film thickness of approximately 2.0/a, and a light transmittance of approximately 9 at 248 nm.
It was 6%.

実施例2 5.42gのCF2=CFOCF2CF、 CF=CF
2および重合開始剤として10mgの(C3F7C(”
0)O)2 を内容積50mMの耐圧ガラス製アンプル
に入れた。凍結脱気を2回繰返した後、25℃で48時
間重合した。重合反応中の圧力は、大気圧よりも低かっ
た。その結果2.22gの重合体を得た。
Example 2 5.42 g of CF2=CFOCF2CF, CF=CF
2 and 10 mg of (C3F7C(”
0)O)2 was placed in a pressure-resistant glass ampoule with an internal volume of 50mM. After repeating freezing and degassing twice, polymerization was carried out at 25° C. for 48 hours. The pressure during the polymerization reaction was below atmospheric pressure. As a result, 2.22 g of polymer was obtained.

この重合体のガラス転移点は108℃であった。The glass transition point of this polymer was 108°C.

またこの重合体の赤外線吸収スペクトルを測定したとこ
ろ、モノマーにあった二重結合に起因する1790cm
−1付近の吸収はなかった。さらにこの重合体をパーフ
ルオロベンゼンに溶解して”F NMRスペクトルを測
定したところ、以下の繰返し構造を示すスペクトルが得
られた。
In addition, when the infrared absorption spectrum of this polymer was measured, it was found that the infrared absorption spectrum of this polymer was 1790 cm
There was no absorption near -1. Furthermore, when this polymer was dissolved in perfluorobenzene and an "F NMR spectrum was measured, a spectrum showing the following repeating structure was obtained.

4 、5wt%に調製した上記重合体のパーフルオロト
リブチルアミン((C4F9)3N)溶液を70mm 
X 70mmのガラス基板上に滴下し、500rpm、
20秒の条件で回転製膜法により膜を形成した。この膜
を、室温から約り℃/分の割合で昇温し、180℃で1
時間乾燥させて放冷した後、蒸留水に浸漬してガラス基
板から剥離し、単独膜とした。このようにして得られた
透明薄膜は屈折率が約1.3、膜厚が約1.8I1m、
248止における光線透過率は約96%であった。
4. 70 mm of perfluorotributylamine ((C4F9)3N) solution of the above polymer prepared to 5 wt%
Dropped onto a 70 mm x glass substrate, 500 rpm,
A film was formed by a rotary film forming method under conditions of 20 seconds. The temperature of this film was raised from room temperature at a rate of approximately ℃/min, and the temperature was increased to 180℃ for 1 hour.
After drying for a period of time and allowing to cool, it was immersed in distilled water and peeled off from the glass substrate to form a single film. The transparent thin film thus obtained has a refractive index of about 1.3, a film thickness of about 1.8I1m,
The light transmittance at 248° was about 96%.

実施例3 4、Owt%の調製したアモルファスフルオロポリマー
であるTEFLON AF(Fluorinated 
(ethylenic−cyclo oxyaliph
atic 5ubstituted ethyleni
c)copolymer、デュポン社製、商標〕のフロ
リナートFC75(住人スリーエム(株)製、商標)溶
液を70mm X70mmのガラス基板上に滴下し、1
1000rp、20秒の条件で回転製膜法により膜を形
成した。この膜を、室温から約り℃/分の割合で昇温し
、約150℃で1時間乾燥させて放冷した後、蒸留水に
浸漬してガラス基板から剥離し、単独膜とした。このよ
うにして得られた透明薄膜は、屈折率が約1.3、膜厚
が約1.OIIm、248nmにおける光線透過率は約
97%であった。
Example 3 TEFLON AF (Fluorinated), an amorphous fluoropolymer prepared with 4.0%
(ethylenic-cyclo oxyaliph
atic 5ubstituted ethyleni
c) A solution of Fluorinert FC75 (manufactured by Jujutsu 3M Co., Ltd., trademark) of copolymer, DuPont Co., Ltd., was dropped onto a 70 mm x 70 mm glass substrate, and 1
A film was formed by a rotary film forming method under the conditions of 1000 rpm and 20 seconds. This film was heated from room temperature at a rate of about 0.degree. C./min, dried at about 150.degree. C. for 1 hour, allowed to cool, and then immersed in distilled water to be peeled off from the glass substrate to obtain a single film. The transparent thin film thus obtained has a refractive index of approximately 1.3 and a film thickness of approximately 1.3 mm. OIIm, the light transmittance at 248 nm was about 97%.

実施例4 3.1ht%に調製したパーフルオロ2,2−ジメチル
1.3−ジオキソールとテトラフルオロエチレンとの共
重合体の前記フロリナートFC75溶液を70mm X
 70amのガラス基板上に滴下し、11000rp、
20秒の条件で回転製膜法により膜を形成した。この膜
を、室温から約り℃/分の割合で昇温し、約150℃で
1時間乾燥させて放冷した後、蒸留水に浸漬してガラス
基板から剥離し、単独膜とした。このようにして得られ
た透明薄膜は、屈折率が約1.3、膜厚が約1.ll1
m、248nmにおける光線透過率は約97%であった
Example 4 The Fluorinert FC75 solution of the copolymer of perfluoro 2,2-dimethyl 1,3-dioxole and tetrafluoroethylene prepared to 3.1 ht% was mixed with 70 mm
Dropped onto a 70am glass substrate, 11000rp,
A film was formed by a rotary film forming method under conditions of 20 seconds. This film was heated from room temperature at a rate of about 0.degree. C./min, dried at about 150.degree. C. for 1 hour, allowed to cool, and then immersed in distilled water to be peeled off from the glass substrate to obtain a single film. The transparent thin film thus obtained has a refractive index of approximately 1.3 and a film thickness of approximately 1.3 mm. ll1
The light transmittance at 248 nm was about 97%.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の防塵体の一例を示す断面図、第2図−
軸目→〒→+は高光線透過性防塵膜の一部の断面図であ
る。 各図中、同一符号は同一または相当部分を示し、1は防
塵体、2は保持枠、3は高光線透過性防塵膜、4は両面
粘着テープ、5はマスク基板、6はパーフルオロ非晶質
フッ素樹脂膜を示す。 代理人 弁理士 柳 原   成
Figure 1 is a sectional view showing an example of the dustproof body of the present invention, Figure 2-
Axis →〒→+ is a cross-sectional view of a part of the high light transmittance dustproof film. In each figure, the same reference numerals indicate the same or equivalent parts, 1 is a dustproof body, 2 is a holding frame, 3 is a highly light-transparent dustproof film, 4 is a double-sided adhesive tape, 5 is a mask substrate, and 6 is a perfluoro amorphous crystal. This shows a quality fluororesin membrane. Agent Patent Attorney Sei Yanagihara

Claims (7)

【特許請求の範囲】[Claims] (1)パーフルオロ非晶質フッ素樹脂からなる高光線透
過性防塵膜。
(1) High light transmittance dustproof film made of perfluoro amorphous fluororesin.
(2)190ないし500nmの光を平均光線透過率で
85%以上透過する請求項(1)記載の高光線透過性防
塵膜。
(2) The high light transmittance dustproof film according to claim (1), which transmits 85% or more of light with an average light transmittance of 190 to 500 nm.
(3)膜厚が0.2ないし10μmである請求項(1)
記載の高光線透過性防塵膜。
(3) Claim (1) wherein the film thickness is 0.2 to 10 μm.
High light transmittance dustproof membrane as described.
(4)膜形成成分の溶液を基板上へ供給し、前記基板を
回転して膜を形成する方法において、前記膜形成成分と
してパーフルオロ非晶質フッ素樹脂を使用することを特
徴とする請求項(1)記載の高光線透過性防塵膜の製造
方法。
(4) A method for forming a film by supplying a solution of a film-forming component onto a substrate and rotating the substrate, characterized in that a perfluoro amorphous fluororesin is used as the film-forming component. (1) A method for producing a high light transmittance dustproof film.
(5)基板を膜形成成分の溶液中に浸漬した後、引上げ
て膜を形成する方法において、前記膜形成成分としてパ
ーフルオロ非晶質フッ素樹脂を使用することを特徴とす
る請求項(1)記載の高光線透過性防塵膜の製造方法。
(5) In the method of forming a film by immersing a substrate in a solution of a film-forming component and then pulling it up, claim (1) characterized in that a perfluoro amorphous fluororesin is used as the film-forming component. The method for producing the highly light-transparent dustproof film described above.
(6)膜形成成分の溶液を液面上に展開して膜を形成す
る方法において、前記膜形成成分としてパーフルオロ非
晶質フッ素樹脂を使用することを特徴とする請求項(1
)記載の高光線透過性防塵膜の製造方法。
(6) A method for forming a film by spreading a solution of a film-forming component on a liquid surface, characterized in that a perfluoro amorphous fluororesin is used as the film-forming component.
) A method for producing a highly light-transparent dustproof film.
(7)請求項(1)ないし(3)のいずれかに記載の高
光線透過性防塵膜と保持枠とからなる防塵体。
(7) A dustproof body comprising the highly light-transparent dustproof film according to any one of claims (1) to (3) and a holding frame.
JP2115604A 1990-05-01 1990-05-01 High pay transmittable dustproof film, production thereof and dustproof body Pending JPH0412355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2115604A JPH0412355A (en) 1990-05-01 1990-05-01 High pay transmittable dustproof film, production thereof and dustproof body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2115604A JPH0412355A (en) 1990-05-01 1990-05-01 High pay transmittable dustproof film, production thereof and dustproof body

Publications (1)

Publication Number Publication Date
JPH0412355A true JPH0412355A (en) 1992-01-16

Family

ID=14666747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2115604A Pending JPH0412355A (en) 1990-05-01 1990-05-01 High pay transmittable dustproof film, production thereof and dustproof body

Country Status (1)

Country Link
JP (1) JPH0412355A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502132A (en) * 1992-07-27 1996-03-26 Asahi Glass Company Ltd. Process for producing a perfluoro copolymer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502132A (en) * 1992-07-27 1996-03-26 Asahi Glass Company Ltd. Process for producing a perfluoro copolymer

Similar Documents

Publication Publication Date Title
US5061024A (en) Amorphous fluoropolymer pellicle films
KR100353659B1 (en) Frame-supported pellicle used for dust protection of photomasks in photolithography
EP1154320B1 (en) Pellicle and adhesive therefor
US7604904B2 (en) Pellicle for lithography
US8815476B2 (en) Pellicle membrane
JPH0527415A (en) Lithographic pellicle
US7416820B2 (en) Pellicle film optimized for immersion lithography systems with NA>1
US6586159B2 (en) Method for using a coated fluoropolymer substrate pellicle in semiconductor fabrication
JPH0574700A (en) Pattern forming method
US6342292B1 (en) Organic thin film and process for producing the same
EP0907106A1 (en) Pellicle membrane for ultraviolet rays and pellicle
KR930010220B1 (en) Non glare pellicle
JPH0412355A (en) High pay transmittable dustproof film, production thereof and dustproof body
JPH0339963A (en) Pellicle
JP4185233B2 (en) Pellicle for lithography
JP4371458B2 (en) Pellicle manufacturing method
JP4144971B2 (en) Pellicle for lithography
JPH06230560A (en) Pellicle
JPH063808A (en) Pellicle and its production
JP3032250B2 (en) Pellicle with excellent light resistance
JP2004226476A (en) Method for manufacturing pellicle
JP7125835B2 (en) pellicle
JPH02272551A (en) Thin film for pellicle
JP4202547B2 (en) Pellicle for lithography
JPH04104155A (en) Pellicle for lithography