JPH04120290A - Copper electroplating solution - Google Patents
Copper electroplating solutionInfo
- Publication number
- JPH04120290A JPH04120290A JP4699190A JP4699190A JPH04120290A JP H04120290 A JPH04120290 A JP H04120290A JP 4699190 A JP4699190 A JP 4699190A JP 4699190 A JP4699190 A JP 4699190A JP H04120290 A JPH04120290 A JP H04120290A
- Authority
- JP
- Japan
- Prior art keywords
- group
- mol
- copper
- hydrogen atom
- plating solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010949 copper Substances 0.000 title claims abstract description 30
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000009713 electroplating Methods 0.000 title abstract description 3
- 238000007747 plating Methods 0.000 claims abstract description 130
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims abstract description 57
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 18
- -1 copper complex salts Chemical class 0.000 claims abstract description 16
- 239000002738 chelating agent Substances 0.000 claims abstract description 13
- 229920002401 polyacrylamide Polymers 0.000 claims abstract description 13
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims abstract description 12
- 229920000642 polymer Polymers 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims description 82
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 19
- 229910052708 sodium Inorganic materials 0.000 claims description 10
- 229910052700 potassium Inorganic materials 0.000 claims description 9
- 239000005749 Copper compound Substances 0.000 claims description 8
- 150000001880 copper compounds Chemical class 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 229910001508 alkali metal halide Inorganic materials 0.000 claims description 4
- 150000008045 alkali metal halides Chemical class 0.000 claims description 4
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 229910052936 alkali metal sulfate Inorganic materials 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 6
- 229920006063 Lamide® Polymers 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000000654 additive Substances 0.000 abstract description 21
- 230000000704 physical effect Effects 0.000 abstract description 16
- 229910000365 copper sulfate Inorganic materials 0.000 abstract description 11
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 abstract description 11
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 abstract description 9
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 abstract description 5
- 150000001879 copper Chemical class 0.000 abstract description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 abstract description 3
- 229910052783 alkali metal Inorganic materials 0.000 abstract description 2
- 150000001340 alkali metals Chemical class 0.000 abstract description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract description 2
- 150000001342 alkaline earth metals Chemical class 0.000 abstract description 2
- 150000003839 salts Chemical class 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 238000004070 electrodeposition Methods 0.000 description 20
- 230000000996 additive effect Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 7
- 239000004471 Glycine Substances 0.000 description 6
- 150000007513 acids Chemical class 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 4
- TXPKUUXHNFRBPS-UHFFFAOYSA-N 3-(2-carboxyethylamino)propanoic acid Chemical compound OC(=O)CCNCCC(O)=O TXPKUUXHNFRBPS-UHFFFAOYSA-N 0.000 description 4
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 4
- 229960003330 pentetic acid Drugs 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 3
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 3
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 3
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- 229910003202 NH4 Inorganic materials 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 108010077895 Sarcosine Proteins 0.000 description 3
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- 235000004279 alanine Nutrition 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 239000013522 chelant Substances 0.000 description 3
- 150000004699 copper complex Chemical class 0.000 description 3
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- FUSNOPLQVRUIIM-UHFFFAOYSA-N 4-amino-2-(4,4-dimethyl-2-oxoimidazolidin-1-yl)-n-[3-(trifluoromethyl)phenyl]pyrimidine-5-carboxamide Chemical compound O=C1NC(C)(C)CN1C(N=C1N)=NC=C1C(=O)NC1=CC=CC(C(F)(F)F)=C1 FUSNOPLQVRUIIM-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- 229930040373 Paraformaldehyde Natural products 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
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- 230000002378 acidificating effect Effects 0.000 description 2
- BIVUUOPIAYRCAP-UHFFFAOYSA-N aminoazanium;chloride Chemical compound Cl.NN BIVUUOPIAYRCAP-UHFFFAOYSA-N 0.000 description 2
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- 229910000431 copper oxide Inorganic materials 0.000 description 2
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- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 2
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Landscapes
- Electroplating And Plating Baths Therefor (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、電気銅めっき液に関する。[Detailed description of the invention] Industrial applications The present invention relates to an electrolytic copper plating solution.
従来の技術及びその課題
鉄や亜鉛等の卑金属材料への銅めっき処理においては、
硫酸銅めっき液等の酸性めっき浴を用いると、直接密着
性のよいめっき皮膜を形成することができない為に、シ
アン化銅めっき液を用いて下地めっきを施した後、硫酸
銅めっきを行なうことが一般的である。しかしながら、
シアン化銅めっき液は、激しい毒性を持つために、作業
環境、廃水処理などの点で問題が多く、これに代わるも
のが望まれている。Conventional technology and its challenges In copper plating on base metal materials such as iron and zinc,
If an acidic plating bath such as copper sulfate plating solution is used, it is not possible to directly form a plating film with good adhesion, so copper sulfate plating should be performed after base plating with copper cyanide plating solution. is common. however,
Copper cyanide plating solution is highly toxic and poses many problems in terms of working environment and wastewater treatment, and an alternative to it is desired.
また、被めっき物が、鉛ガラス、亜鉛、タングステン焼
結体、セラミックス等の強酸や強塩基に侵され易い材料
を構成成分として有するもの、例えばチップコンデンサ
ー、チップ抵抗、セラミック基板、サーデイツプIC等
である場合にも、これらの材料を侵すことのない銅めっ
き液が要望されている。In addition, if the object to be plated contains materials that are easily attacked by strong acids or strong bases, such as lead glass, zinc, sintered tungsten, and ceramics, such as chip capacitors, chip resistors, ceramic substrates, and ceramic substrates, etc. In some cases, there is a need for a copper plating solution that does not attack these materials.
一方、近年、プリント配線基板の高密度化、多層化等に
ともない、板厚が厚く、スルーホールの穴径の小さい基
板、即ち高アスペクト比(板厚/穴径)のプリント基板
が増加しつつあり、スルーホールめっき用の電気銅めっ
き液として、均一電着性に優れ、しかも析出皮膜の物性
が良好なめつき液が要望されている。On the other hand, in recent years, with the increasing density and multilayering of printed circuit boards, the number of printed circuit boards with thick boards and small through-hole diameters, that is, high aspect ratios (board thickness/hole diameter), is increasing. As an electrolytic copper plating solution for through-hole plating, there is a demand for a plating solution that has excellent uniform electrodeposition properties and has good physical properties of the deposited film.
従来、スルーホールめっき用の電気銅めっき液としては
、ビロリン酸銅及びピロリン酸カリを主成分とするビロ
リン酸銅めっき液が主として用いられている。しかしな
がら、ピロリン酸銅めっき液では、多量に含まれるピロ
リン酸の加水分解によりオルソリン酸が形成され、これ
が電流効率やめっき皮膜の物性に悪影響を及ぼすために
、定期的な液の廃棄が避けられず、コスト高になること
に加えて、廃水処理が煩雑になるという欠点がある。し
かも、析出皮膜は、伸び等の物性が不充分であり、また
均一電着性についても改善の余地がある。Conventionally, as an electrolytic copper plating solution for through-hole plating, a copper birophosphate plating solution containing copper birophosphate and potassium pyrophosphate as main components has been mainly used. However, in the copper pyrophosphate plating solution, orthophosphoric acid is formed by hydrolysis of the large amount of pyrophosphoric acid contained in the solution, which has a negative effect on the current efficiency and physical properties of the plating film, so periodic disposal of the solution is unavoidable. However, in addition to high costs, wastewater treatment is complicated. Moreover, the deposited film has insufficient physical properties such as elongation, and there is also room for improvement in uniform electrodeposition.
また、硫酸銅、硫酸等を主成分とする酸性銅めっき液も
プリント基板のスルーホールめっき用として用いられて
いるが、析出皮膜の引張り強度が低く、更に微量添加剤
の管理などにも問題がある。In addition, acidic copper plating solutions containing copper sulfate, sulfuric acid, etc. as main components are also used for through-hole plating of printed circuit boards, but the tensile strength of the deposited film is low and there are also problems in controlling trace amounts of additives. be.
また、この型のめつき液では、均一電着性を向上させる
ために、高硫酸濃度(濃硫酸300g/r)、低硫酸銅
濃度(Cuとして10 g/7以下)としためっき液が
用いられているが、作業性が悪く、基板、レジスト皮膜
などの耐酸性にも問題があり、用途が限定されている。In addition, this type of plating solution uses a plating solution with a high sulfuric acid concentration (concentrated sulfuric acid 300 g/r) and a low copper sulfate concentration (10 g/7 or less as Cu) to improve uniform electrodeposition. However, it has poor workability and problems with acid resistance of substrates, resist films, etc., and its applications are limited.
課題を解決するための手段
本発明者は、上記した如き従来技術の問題点を解消し得
る電気銅めっき液を得るべく鋭意研究を重ねてきた。そ
の結果、特定の有機キレート化剤を用いた銅錯塩水溶液
に、ホルムアルデヒド、ホルムアルデヒド重合体、ヒド
ラジン化合物及びポリアクリルアミドの少なくとも1種
の化合物を少量添加しためっき液は、広いpH範囲で良
好なめっき皮膜を形成することができ、しかも均一電着
性や析出皮膜の物性等が非常に良好であり、更に、この
めっき液に特定の含窒素化合物を添加しためっき液は、
析出皮膜の物性がより一層向上することを見出した。そ
して、これらのめつき液は、スルーホールめっき用の電
気めっき液として優れたものであると同時に、広いpH
範囲で使用可能であることから、適宜pHを調製するこ
とによって、鉄等の卑金属素材を含む各種の材料に直接
密着性良くめっき皮膜を形成でき、また強酸、強塩基等
に侵され易い材料をも侵すことなくめつき可能であるこ
とを見出した。また、これらのめつき液に、更に、アル
カリ金属のハロゲン化物及び硫酸塩、アルカリ土類金属
のハロゲン化物及び硫酸塩並びにアンモニウムのハロゲ
ン化物及び硫酸塩の少なくとも1種の化合物を添加する
ことによって、均一電着性がより一層向上し、スルーホ
ールめっき用の電気銅めっき液として極めて優れたもの
となることを見出した。本発明は、これらの知見に基づ
いて完成されたものである。Means for Solving the Problems The present inventor has conducted extensive research in order to obtain an electrolytic copper plating solution that can solve the problems of the prior art as described above. As a result, a plating solution prepared by adding a small amount of at least one of formaldehyde, formaldehyde polymer, hydrazine compound, and polyacrylamide to an aqueous copper complex salt solution using a specific organic chelating agent has been found to produce a good plating film over a wide pH range. It is possible to form a plating solution with very good uniform electrodeposition and physical properties of the deposited film.Furthermore, a plating solution in which a specific nitrogen-containing compound is added to this plating solution,
It has been found that the physical properties of the deposited film are further improved. These plating solutions are excellent as electroplating solutions for through-hole plating, and at the same time have a wide pH range.
By adjusting the pH appropriately, it is possible to form a plating film with good adhesion directly on various materials including base metal materials such as iron, and it can also be used on materials that are easily attacked by strong acids, strong bases, etc. It was also discovered that it is possible to attach the metal without damaging it. Furthermore, by further adding at least one compound of alkali metal halides and sulfates, alkaline earth metal halides and sulfates, and ammonium halides and sulfates to these plating solutions, It has been found that the uniform electrodeposition properties are further improved, making it an extremely excellent electrolytic copper plating solution for through-hole plating. The present invention was completed based on these findings.
即ち、本発明は、以下に示す電気銅めっき液を提供する
ものである。That is, the present invention provides the electrolytic copper plating solution shown below.
(1)a) 銅化合物0.01〜1モル/lb) 一般
式
(式中、xlは水素原子又は基−COOM4、X2は基
−COOM、又は基−CH2CH2OH。(1) a) Copper compound 0.01 to 1 mol/lb) General formula (wherein xl is a hydrogen atom or a group -COOM4, and X2 is a group -COOM or a group -CH2CH2OH.
nは0〜2の整数を示し、Ml 、M2、M、、M4及
びM5は同−又は異なって各々水素原子、KSNa又は
NH,である)で表わされる化合物、及び一般式
(式中、X、は水素原子、基−CH2COOM6、基−
CH2CH2COOMl又は
基−CH2CH2OH,X、は基−CH2C00MB
、基−CH2CH2COOMg又は基−CH2CH20
H,x5は基−CH2COOM1゜、基−CH2CH2
COOMI 1又は基−CH2CH2OHを示し、M6
、M7 、Ma、Mg、Ml。及びMl 1は同−又
は異なって各々水素原子、KSNa又はNH4である)
で表わされる化合物の少なくとも1種からなるキレート
北側0.01〜2モル/l、並びに
C) ホルムアルデヒド0.01〜1モル/l、ホルム
アルデヒド重合体0.3〜30g/l、ヒドラジン化合
物0.0005〜0.1モル/I及びポリアクリルアミ
ド0.005〜10g/7の少なくとも1種
を含有する水溶液からなる電気銅めっき液(以下、「本
発明めっき液(I)」という)、
■a) 銅化合物CLOI〜1モル/lb) 一般式
(式中、Xlは水素原子又は基−COOM4、X2は基
−COOM、又は基−CH2CH2OH1nは0〜2の
整数を示し、Ml 、M2 、M3、M4及びM5は同
−又は異なって各々水素原子、K、Na又はNH,であ
る)で表わされる化合物、及び一般式、
/X3
N−X。n represents an integer of 0 to 2, and Ml, M2, M, , M4 and M5 are the same or different and each is a hydrogen atom, KSNa or NH), and a compound represented by the general formula (wherein, , is a hydrogen atom, a group -CH2COOM6, a group -
CH2CH2COOMl or the group -CH2CH2OH,X, is the group -CH2C00MB
, the group -CH2CH2COOMg or the group -CH2CH20
H, x5 is a group -CH2COOM1°, a group -CH2CH2
COOMI 1 or represents the group -CH2CH2OH, M6
, M7, Ma, Mg, Ml. and Ml 1 are the same or different and each is a hydrogen atom, KSNa or NH4)
0.01-2 mol/l of a chelate on the north side consisting of at least one of the compounds represented by C) formaldehyde 0.01-1 mol/l, formaldehyde polymer 0.3-30 g/l, hydrazine compound 0.0005 Electrolytic copper plating solution consisting of an aqueous solution containing at least one of ~0.1 mol/I and polyacrylamide 0.005 to 10 g/7 (hereinafter referred to as "invention plating solution (I)"), ■a) Copper Compound CLOI ~ 1 mol/lb) General formula (wherein, Xl is a hydrogen atom or a group -COOM4, X2 is a group -COOM, or a group -CH2CH2OH1n represents an integer of 0 to 2, Ml, M2, M3, M4 and M5 are the same or different and each is a hydrogen atom, K, Na or NH), and a compound represented by the general formula /X3N-X.
\X5
(式中、X、は水素原子、基−CH2000M s、基
−CH2CIll COOM?又は
基−CH2CH2OH%X4は基−CH2C00M8、
基−CH2CH2COOMg又は基−CH2CH20H
%X5は基−CH2COOM1゜、基−(H2CH2C
OOMI 1又は基−CH2CH2OHを示し、M6、
M7 、Ma、M9 、Ml o及びMl lは同−又
は異なって各々水素原子、K、Na又はNH,である)
で表わされる化合物の少なくとも1種からなるキレート
北側0.01〜2モル/l、
C) ホルムアルデヒド0.01〜1モル/I。\X5 (wherein, X is a hydrogen atom, a group -CH2000M s, a group -CH2CIll COOM? or a group -CH2CH2OH%
Group -CH2CH2COOMg or group -CH2CH20H
%X5 is the group -CH2COOM1°, the group -(H2CH2C
OOMI 1 or the group -CH2CH2OH, M6,
M7, Ma, M9, Mlo and Ml are the same or different and each is a hydrogen atom, K, Na or NH)
C) 0.01 to 2 mol/l of a chelate consisting of at least one compound represented by C) formaldehyde of 0.01 to 1 mol/l.
ホルムアルデヒド重合体0.3〜30g/1.ヒドラジ
ン化合物0.0005〜0.1モル/l及びポリアクリ
ルアミド0.005〜Log/7の少なくとも1種、並
びに
d)一般式
(式中、zl、Z2、z3及びZ4は同−又は異なって
各々水素原子又はメチル基、QIは水素原子、K、Na
又はNH4、mは1〜15の整数を示す。)で表わされ
る化合物、及び一般式(式中、Aは水素原子、水酸基、
−8H。Formaldehyde polymer 0.3-30g/1. at least one of a hydrazine compound from 0.0005 to 0.1 mol/l and a polyacrylamide from 0.005 to Log/7, and d) a general formula (wherein zl, Z2, z3 and Z4 are the same or different and each Hydrogen atom or methyl group, QI is hydrogen atom, K, Na
or NH4, m represents an integer of 1 to 15. ), and the general formula (wherein A is a hydrogen atom, a hydroxyl group,
-8H.
基NH2CO−1基−COOQ3、アミノ基、基NH2
−C−NH−1基CH,cHi s−又は基NH
NH2CONH−1Z、 、Z、及びZ7は同−又は異
なって各々水素原子、メチル基又はエチル基、!は0〜
4の整数、kは0又は1を示し、Q2及びQ3は同−又
は異なって各々水素原子、K1Na又はNH4である)
で表わされる化合物の少なくとも1種0.006〜1モ
ル/l
を含有する水溶液からなる電気銅めっき液(以下「本発
明めっき液(■)」という)、
■ アルカリ金属のハロゲン化物及び硫酸塩、アルカリ
土類金属のハロゲン化物及び硫酸塩並びにアンモニウム
のハロゲン化物及び硫酸塩の少なくとも1種0.01〜
3モル/lを含有する請求項第1項又は第2項のいずれ
かに記載の電気銅めっき液(以下「本発明めっき液(■
)」という)。group NH2CO-1 group -COOQ3, amino group, group NH2
-C-NH-1 group CH, cHi s- or group NH NH2CONH-1Z, , Z, and Z7 are the same or different and are each a hydrogen atom, a methyl group, or an ethyl group, ! is 0~
an integer of 4, k represents 0 or 1, Q2 and Q3 are the same or different and each is a hydrogen atom, K1Na or NH4)
an electrolytic copper plating solution consisting of an aqueous solution containing 0.006 to 1 mol/l of at least one of the compounds represented by (hereinafter referred to as "the plating solution of the present invention (■)"); (2) an alkali metal halide and a sulfate; At least one of alkaline earth metal halides and sulfates and ammonium halides and sulfates from 0.01 to
3 mol/l of the electrolytic copper plating solution according to claim 1 or 2 (hereinafter referred to as "the plating solution of the present invention (■
)”).
本発明めっき液では、銅化合物としては、b)成分のキ
レート化剤によって銅錯体となり、水溶液中で安定して
存在するものであれば、特に限定はなく、例えば、硫酸
銅、塩化銅、酸化銅、炭酸銅、酢酸銅、ビロリン酸銅、
しゆう酸銅等を用いることができる。これらのうちで、
硫酸銅、塩化銅、酸化銅等が好ましく用いられる。銅化
合物の水溶液中での濃度は、0.01〜1モル/l程度
、好ましくは0.05〜0.5モル/l程度とする。In the plating solution of the present invention, the copper compound is not particularly limited as long as it forms a copper complex with the chelating agent of component b) and exists stably in an aqueous solution, such as copper sulfate, copper chloride, copper oxide, etc. Copper, copper carbonate, copper acetate, copper birophosphate,
Copper oxalate or the like can be used. Of these,
Copper sulfate, copper chloride, copper oxide, etc. are preferably used. The concentration of the copper compound in the aqueous solution is about 0.01 to 1 mol/l, preferably about 0.05 to 0.5 mol/l.
0.01モル/lを下回る濃度では、めっき皮膜の析出
速度が遅くなるので実用的ではなく、一方、1モル/l
を上回る濃度では、析出速度がより向上することはなく
、しかもめっき皮膜の安定性が阻害されることかあ−る
ので好ましくない。If the concentration is less than 0.01 mol/l, the precipitation rate of the plating film will be slow, so it is not practical.
If the concentration exceeds the above, the precipitation rate will not be further improved, and the stability of the plating film may be impaired, which is not preferable.
銅錯体を形成するために用いるキレート化剤としては、
一般式
(式中、Xl、X2、Ml、M2、M8及びnは上記に
同じ)
で表わされる化合物及び一般式
(式中、X3、X4及びX5は上記に同じ)で表わされ
る化合物の少なくとも1種の化合物を用いる。これらの
キレート化剤の好ましい具体例としては、エチレンジア
ミン四酢酸(EDTA) 、エチレンジアミン四酢酸二
ナトリウム塩(EDTA・2Na) ヒドロキシエチ
ルエチレンジアミン三酢酸(HEDTA) 、ジエチレ
ントリアミン五酢酸(DTPA) 、ニトリロ三酢酸(
NTA)、トリエチレンテトラアミン六酢酸(TTHA
)、イミノジ酢酸(IDA)、イミノジプロピオン酸(
IDP)等を示すことができる。この様なキレート化剤
を添加することによって、銅化合物は銅錯体としてめっ
き液中に安定に存在することができ、良好なめっき皮膜
を形成し得るものとなる。Chelating agents used to form copper complexes include:
A compound represented by the general formula (wherein Xl, X2, Ml, M2, M8 and n are the same as above) and at least one compound represented by the general formula (wherein X3, X4 and X5 are the same as above) Use seed compounds. Preferred specific examples of these chelating agents include ethylenediaminetetraacetic acid (EDTA), ethylenediaminetetraacetic acid disodium salt (EDTA・2Na), hydroxyethylethylenediaminetriacetic acid (HEDTA), diethylenetriaminepentaacetic acid (DTPA), and nitrilotriacetic acid (
NTA), triethylenetetraaminehexaacetic acid (TTHA)
), iminodiacetic acid (IDA), iminodipropionic acid (
IDP) etc. By adding such a chelating agent, the copper compound can stably exist in the plating solution as a copper complex, and a good plating film can be formed.
特に好ましいキレート化剤は、エチレンジアミン四酢酸
及びその塩類である。キレート、北側の添加量は、0.
01〜2モル/l程度、好ましくは0.05〜1モル/
l程度とする。0.01モル/lを下回る濃度では、め
っき液の安定性が不充分であり、一方2モル/lを上回
る濃度としても液の安定性がより向上することはないの
で、不経済である。Particularly preferred chelating agents are ethylenediaminetetraacetic acid and its salts. Chelate, the amount added on the north side is 0.
About 0.01 to 2 mol/l, preferably 0.05 to 1 mol/l
It should be about l. If the concentration is less than 0.01 mol/l, the stability of the plating solution will be insufficient, while if the concentration exceeds 2 mol/l, the stability of the plating solution will not be further improved, which is uneconomical.
本発明の電気銅めっき液では、添加剤として、ホルムア
ルデヒド、ホルムアルデヒド重合体、ヒドラジン化合物
及びポリアクリルアミドの少なくとも1種(以下、「添
加剤成分(A)」という)を用いる。添加剤成分(A)
を加えることによって、析出皮膜の引張り強さ、伸び等
の物性が優れたものとなり、均一電着性も良好になる。In the electrolytic copper plating solution of the present invention, at least one of formaldehyde, formaldehyde polymer, hydrazine compound, and polyacrylamide (hereinafter referred to as "additive component (A)") is used as an additive. Additive component (A)
By adding , the physical properties such as tensile strength and elongation of the deposited film are excellent, and the uniform electrodeposition property is also improved.
添加剤成分(A)のうちで、ホルムアルデヒド重合体と
しては、広い範囲の重合度のものを用いることができ、
例えば重合度2〜1000程度のものを用いることがで
きる。ヒドラジン化合物としては、例えば、ヒドラジン
、ヒドラジン塩酸塩、ヒドラジン酢酸塩、硫酸ヒドラジ
ン等を用いることができる。ポリアクリルアミドとして
は、広い範囲の分子量のものを用いることができ、例え
ば重量平均分子量(Mw) = 100〜100000
00程度のものを用いた場合に、いずれも良好な結果が
得られる。Among the additive components (A), formaldehyde polymers having a wide range of polymerization degrees can be used,
For example, those having a degree of polymerization of about 2 to 1000 can be used. As the hydrazine compound, for example, hydrazine, hydrazine hydrochloride, hydrazine acetate, hydrazine sulfate, etc. can be used. Polyacrylamide having a wide range of molecular weights can be used, for example, weight average molecular weight (Mw) = 100 to 100,000.
Good results can be obtained in all cases when using a compound of about 0.00.
これらの添加剤成分(A)のうちで、ホルムアルデヒド
、パラホルムアルデヒド、ヒドラジン、ポリアクリルア
ミド等を用いることが特に好ましい。Among these additive components (A), it is particularly preferable to use formaldehyde, paraformaldehyde, hydrazine, polyacrylamide, and the like.
添加剤成分(A)の添加量は、ホルムアルデヒド0.0
1〜1モル/l程度、好ましくは0.02〜0.5モル
/l程度、ホルムアルデヒド重合体0.3〜30g/I
程度、好ましくは0.6〜15g/7と度、ヒドラジン
化合物0.0005〜0.1モル/l程度、好ましくは
0.001〜0.05モル/l程度、ポリアクリルアミ
ド0.005〜10g/j程度、好ましくは0.02〜
5g/l程度とする。添加剤成分(A)の添加量が上記
範囲を下回ると、物性の向上効果が不充分となり、一方
、これらを上回る濃度としても物性がより向上すること
はなく、不経済である。本発明では、上記した添加剤成
分(A)を1種又は2種以上組み合わせて用いることが
できる。The amount of additive component (A) added is formaldehyde 0.0
About 1 to 1 mol/l, preferably about 0.02 to 0.5 mol/l, formaldehyde polymer 0.3 to 30 g/I
degree, preferably 0.6 to 15 g/7, hydrazine compound about 0.0005 to 0.1 mol/l, preferably about 0.001 to 0.05 mol/l, polyacrylamide 0.005 to 10 g/l j approximately, preferably 0.02~
The amount should be about 5 g/l. If the amount of additive component (A) added is less than the above range, the effect of improving the physical properties will be insufficient, while even if the concentration exceeds the above range, the physical properties will not be further improved, which is uneconomical. In the present invention, the above-mentioned additive component (A) can be used alone or in combination of two or more.
本発明めっき液(I)は、上記したa)銅化合物、b)
キレート化剤、及びC)添加剤成分(A)を水に溶解す
ることによって得られる。このめっき液は、従来のピロ
リン酸銅めっき液や硫酸銅めっき液等のスルーホールめ
っき用めっき液と比較して、優れた均一電着性を有する
。また、従来のスルーホールめっき用めっき液では、引
張り強度と伸びの両方の特性が同時に良好なめっき皮膜
を得ることができなかったが、本発明めっき液では、両
方の特性が同時に優れためっき皮膜を形成できる。また
、本発明めっき液は、広い範囲のpH値でめっき可能で
あることから、適当なpH値に調節することによって、
鉄素材等の卑金属素材上へ直接密着性よくめっき皮膜を
形成することが可能であり、シアン化銅めっき液の代替
としても使用し得るものである。また、強酸や強塩基に
侵され易い材料に対しても、これを侵すことなくめっき
皮膜を形成することが可能である。The plating solution (I) of the present invention comprises the above-mentioned a) copper compound, b)
It is obtained by dissolving the chelating agent and C) additive component (A) in water. This plating solution has excellent uniform electrodeposition properties compared to conventional through-hole plating solutions such as copper pyrophosphate plating solution and copper sulfate plating solution. Furthermore, with the conventional plating solution for through-hole plating, it was not possible to obtain a plating film with good properties in both tensile strength and elongation, but with the plating solution of the present invention, a plating film with good properties in both properties can be obtained. can be formed. In addition, since the plating solution of the present invention can perform plating in a wide range of pH values, by adjusting the pH value to an appropriate value,
It is possible to form a plating film with good adhesion directly onto base metal materials such as iron materials, and it can also be used as an alternative to copper cyanide plating solution. Furthermore, it is possible to form a plating film on materials that are easily attacked by strong acids and strong bases without damaging them.
本発明めっき液(II)は、上記した本発明めっき液(
I)に、更に一般式:
(式中、Z l 、ZQ %z3s Z4 % Qt
%及びmは上記に同じ)で表わされる化合物、及び一般
式:(式中、As Z5 、Z6 、z7 、Q2 、
’及びkは上記に同じ)で表わされる化合物の少なくと
も1種(以下「添加剤成分(B)」という)を添加した
ものであり、析出皮膜の引張り強さ、伸び率等の物性が
より一層向上したものである。添加剤成分(B)の好ま
しい具体例としては、グリシン、アラニン、N−メチル
グリシン、バリン、ノルバリン、ロイシン、ノルロイシ
ン、イソロイシン、セリン、システィン、アスパラギン
、アスパラギン酸、グルタミン酸、オルニチン、リジン
、アルギニン等を挙げることができ、グリシン、アラニ
ン、N−メチルグリシン、リジン等が特に好ましい。The plating solution (II) of the present invention is the plating solution (II) of the present invention described above (
I), and further the general formula: (wherein Z l , ZQ %z3s Z4 % Qt
% and m are the same as above), and a compound represented by the general formula: (wherein As Z5 , Z6 , z7 , Q2 ,
' and k are the same as above) (hereinafter referred to as "additive component (B)"), the physical properties such as tensile strength and elongation of the deposited film are further improved. This is an improvement. Preferred specific examples of the additive component (B) include glycine, alanine, N-methylglycine, valine, norvaline, leucine, norleucine, isoleucine, serine, cysteine, asparagine, aspartic acid, glutamic acid, ornithine, lysine, and arginine. Among them, glycine, alanine, N-methylglycine, lysine and the like are particularly preferred.
添加剤成分(B)の添加量は、0.006〜1モル/l
程度、好ましくは0.01〜0.5モル/l程度とする
。0.006モル/lを下回る添加量では、物性向上に
十分に寄与せず、一方1モル/lを上回る量を添加して
も物性がより向上することはなく、不経済である。The amount of additive component (B) added is 0.006 to 1 mol/l
level, preferably about 0.01 to 0.5 mol/l. If the amount added is less than 0.006 mol/l, it will not contribute sufficiently to improving the physical properties, while if it is added in an amount exceeding 1 mol/l, the physical properties will not be further improved, which is uneconomical.
本発明では、上記した本発明めっき液(I)又は(II
)に、更に、アルカリ金属のハロゲン化物及び硫酸塩、
アルカリ土類金属のハロゲン化物及び硫酸塩並びにアン
モニウムのハロゲン化物及び硫酸塩の少なくとも1種を
添加することによって、析出皮膜の物性をほとんど低下
させることなく、めっき液の均一電着性を更に向上させ
ることができる。このような化合物を添加しためっき液
(本発明めっき液(■))は均一電着性、析出皮膜の物
性ともに極めて優れたものであり、プリント基板のスル
ーホールめっき用の電気銅めっき液として、特に有用性
が高い。In the present invention, the above-mentioned present invention plating solution (I) or (II)
), further comprising alkali metal halides and sulfates,
By adding at least one of alkaline earth metal halides and sulfates and ammonium halides and sulfates, the uniform electrodeposition of the plating solution is further improved without substantially reducing the physical properties of the deposited film. be able to. The plating solution containing such a compound (the plating solution of the present invention (■)) has extremely excellent uniform electrodeposition properties and the physical properties of the deposited film, and can be used as an electrolytic copper plating solution for through-hole plating of printed circuit boards. Especially useful.
アルカリ金属としては、カリウム、ナトリウム等を例示
でき、アルカリ土類金属としては、カルシウム、マグネ
シウム等を例示でき、ハロゲンとしては、塩素、ヨウ素
、シュウ素等を例示できる。Examples of alkali metals include potassium and sodium, examples of alkaline earth metals include calcium and magnesium, and examples of halogens include chlorine, iodine, and oxaline.
好ましい化合物の具体例としては、塩化カリウム、塩化
マグネシウム、塩化カルシウム、塩化アンモニウム、ヨ
ウ化カリウム、シュウ化カリウム、硫酸カリウム、硫酸
ナトリウム、硫酸アンモニウム等を例示できる。これら
の化合物の添加量は、0.01〜3モル/l程度、好ま
しくは0.05〜2モル/l程度とする。0.01モル
/lを下回る添加量では、均一電着性向上の効果は充分
には発揮されず、一方3モル/lを上回る添加量として
も均一電着性がより向上することはなく、しかもめっき
液中に完全に溶解しない場合があるので好ましくない。Specific examples of preferred compounds include potassium chloride, magnesium chloride, calcium chloride, ammonium chloride, potassium iodide, potassium oxalide, potassium sulfate, sodium sulfate, ammonium sulfate, and the like. The amount of these compounds added is about 0.01 to 3 mol/l, preferably about 0.05 to 2 mol/l. If the amount added is less than 0.01 mol/l, the effect of improving uniform electrodeposition will not be sufficiently exhibited, while if the amount added is more than 3 mol/l, the uniform electrodeposition will not be further improved. Moreover, it is not preferable because it may not be completely dissolved in the plating solution.
本発明めっき液(I)〜(Illlr)は、いずれもめ
っき時のpH値は特に限定されず、いかなるpH領域に
おいても良好なめっき皮膜を形成することが可能であり
、使用する素材の種類や要求される析出皮膜の物性に応
じてpH値を適宜設定すればよい。例えば、pH8程度
以上で用いることによって、鉄素材上へ直接密着性よく
めっき皮膜を形成することができる。また、pH6〜8
程度に調整することによって強酸や強塩基に侵され易い
材料をも侵すことなくめっき皮膜を形成することができ
る。The plating solutions (I) to (Illr) of the present invention are not particularly limited in pH value during plating, and can form a good plating film in any pH range, and can be used depending on the type of material used. The pH value may be appropriately set depending on the required physical properties of the deposited film. For example, by using it at a pH of about 8 or higher, a plating film can be directly formed on the iron material with good adhesion. Also, pH 6-8
By adjusting the amount to a certain degree, a plating film can be formed without attacking materials that are easily attacked by strong acids or strong bases.
更にスルーホールめっき用として用いる場合には、pH
6〜8程程度の範囲内で用いることによって、均一電着
性、引張り強さ、伸び率等の全てに優れためっき皮膜を
得ることができる。特に均一電着性を良好にするために
はpH8〜9程度で用いることが好ましい。めっき液の
pH調整には、塩酸、硫酸等の酸類や水酸化ナトリウム
、水酸化カリウム等のアルカリ性化合物を適宜用いるこ
とができる。Furthermore, when used for through-hole plating, the pH
By using within the range of about 6 to 8, a plated film excellent in all of uniform electrodeposition, tensile strength, elongation, etc. can be obtained. In particular, in order to improve uniform electrodeposition, it is preferable to use the solution at a pH of about 8 to 9. To adjust the pH of the plating solution, acids such as hydrochloric acid and sulfuric acid, and alkaline compounds such as sodium hydroxide and potassium hydroxide can be used as appropriate.
本発明めっき液は、浴温10〜90℃程度で使用するこ
とができるが、作業性や析出皮膜の物性の点から、20
〜60℃程度で用いることが好ましい。The plating solution of the present invention can be used at a bath temperature of about 10 to 90°C, but from the viewpoint of workability and physical properties of the deposited film,
It is preferable to use it at about 60°C.
陰極電流密度は、めっき液の液温や流動状態により広い
範囲で選択することができる。が、通常0、 1〜10
A/dm2程度、好ましくは0.5〜5A/dm”程
度とすればよい。The cathode current density can be selected within a wide range depending on the temperature and flow state of the plating solution. But usually 0, 1~10
It may be about A/dm2, preferably about 0.5 to 5 A/dm''.
発明の効果
本発明めっき液は、以下に示すような優れた特徴を有す
るものである。Effects of the Invention The plating solution of the present invention has the following excellent characteristics.
■ 均一電着性、析出皮膜の引張り強度、伸び率等が良
好であり、プリント基板のスルーホールめっき用めっき
液として好適である。特に、本発明めっき液(III)
は、極めて優れた均一電着性を有するものである。(2) It has good uniform electrodeposition, tensile strength and elongation of the deposited film, and is suitable as a plating solution for through-hole plating of printed circuit boards. In particular, the plating solution (III) of the present invention
has extremely excellent uniform electrodeposition properties.
■ 広いpH域でめっき可能であり、例えばpH8程度
以上で用いることによって、鉄素地上に直接密着性よく
銅めっき皮膜を形成することができる。また、被めっき
物が鉛ガラス、亜鉛、タングステン焼結体、セラミック
ス等の強酸や強塩基に侵され易い材料を構成成分として
有するもの、例えばチップコンデンサー、チップ抵抗、
セラミック基板、サーデイツプIC等である場合にも、
めっき液のpHを適宜調節することによって、これらの
材料を侵すことなく銅めっきを施すことが可能となる。(2) Plating is possible in a wide pH range; for example, by using it at a pH of about 8 or higher, a copper plating film can be formed directly on the iron substrate with good adhesion. In addition, items to be plated include materials that are easily attacked by strong acids and bases, such as lead glass, zinc, sintered tungsten, and ceramics, such as chip capacitors, chip resistors,
Even in the case of ceramic substrates, deep dip ICs, etc.
By appropriately adjusting the pH of the plating solution, it becomes possible to perform copper plating without damaging these materials.
■ 通常の硫酸銅めっき液に添加されているような硫黄
系光沢剤を使用することなく光沢めっきを形成できる。■ Bright plating can be formed without using sulfur-based brighteners that are added to ordinary copper sulfate plating solutions.
このため、厚付けを行なう場合にも析出皮膜への硫黄共
析の悪影響がなく、電鋳用銅めっき液として好適に用い
られる。Therefore, even when thickening is performed, there is no adverse effect of sulfur eutectoid on the deposited film, and it is suitably used as a copper plating solution for electroforming.
■ めっき液の維持管理が容易であり、また、析出皮膜
に悪影響を及ぼすような不純物の生成が少ないので、長
期間安定に使用できる。■ The plating solution is easy to maintain and manage, and it can be used stably for a long period of time because it generates few impurities that can adversely affect the deposited film.
■ 毒性の少ないめっき液である。■ It is a plating solution with low toxicity.
実施例 以下、実施例を示して本発明を更に詳細に説明する。Example Hereinafter, the present invention will be explained in more detail by showing examples.
実施例1 下記組成のめっき液を調製した。Example 1 A plating solution having the following composition was prepared.
A浴 B浴
モル/l モル/I
ocuc72 ・2H200,250,250エチレ
ンジアミン四酢酸 0.4 0.40ホルムアルデヒ
ド 0. 05 0.050グリシン
0.03上記A浴及びB浴を用いて、
pH6〜10、浴温50℃、陰極電流密度3A/dm2
0条件で60mmX 100mmのチタン板上に30μ
m厚のめっきを施し、その後めっき皮膜を剥離した。A bath B bath mol/l mol/I ocuc72 ・2H200,250,250 ethylenediaminetetraacetic acid 0.4 0.40 formaldehyde 0. 05 0.050 Glycine
0.03 Using the above A bath and B bath,
pH 6-10, bath temperature 50℃, cathode current density 3A/dm2
30μ on a 60mm x 100mm titanium plate under zero conditions.
Plating was applied to a thickness of m, and then the plating film was peeled off.
得られためっき皮膜から、測定部の幅が4.2mmのダ
ンベル状の試料を打ち抜き、引張り試験を行なって、ス
トレス−ストレイン曲線を求めることによって、引張り
強さ、及び伸び率を求めた。A dumbbell-shaped sample with a measuring part width of 4.2 mm was punched out from the obtained plating film, a tensile test was performed, and a stress-strain curve was determined to determine the tensile strength and elongation rate.
結果を第1図及び第2図に示す。The results are shown in Figures 1 and 2.
第1図から、A浴、B浴共にpH6〜10において、析
出皮膜が高い引張り強度を示すことが判る。この引張り
強度の値は、ピロリン酸銅めっき液から得られるめっき
皮膜と同程度であり、硫酸銅めっき液から得られるめっ
き皮膜に比して非常に高い値である。また、第2図から
、A浴、B浴共にpH6〜10において、析出皮膜が大
きな伸び率を示すことが判る。この伸び率は、硫酸銅め
っき液から得られるめっき皮膜の伸び率と同程度であり
、ピロリン酸銅めっき液から得られるめっき皮膜の伸び
率に比して非常に大きな値である。From FIG. 1, it can be seen that the precipitated film exhibits high tensile strength in both baths A and B at pH 6 to 10. This tensile strength value is comparable to that of a plating film obtained from a copper pyrophosphate plating solution, and is much higher than that of a plating film obtained from a copper sulfate plating solution. Moreover, from FIG. 2, it can be seen that the deposited film exhibits a large elongation rate in both baths A and B at pH 6 to 10. This elongation rate is comparable to the elongation rate of a plating film obtained from a copper sulfate plating solution, and is much larger than the elongation percentage of a plating film obtained from a copper pyrophosphate plating solution.
以上の結果から、本発明めっき液は、析出皮膜の引張り
強度及び伸び率がともに優れたものであることが判る。From the above results, it can be seen that the plating solution of the present invention is excellent in both the tensile strength and elongation of the precipitated film.
特に、B浴を用いた場合に、引張り強さ、伸び率共に大
きな値を示すめっき皮膜が得られる。In particular, when bath B is used, a plated film exhibiting high values of both tensile strength and elongation can be obtained.
実施例2 下記組成のめっき液を調製した。Example 2 A plating solution having the following composition was prepared.
oCuC72”2H200,25モル/lOキレート化
北側 0.4 モル/l0ホルムアルデヒド
0.05モル/lQグリシン 0
.03モル/l※ キレート化剤としては、エチレンジ
アミン四酢酸二ナトリウム(EDTA−2Na)、ヒド
ロキシエチルエチレンジアミン三酢酸(HEDTA)
、ジエチレントリアミン五酢酸(DTPA) 、ニトリ
ロ三酢酸(NTA)、トリエチレンテトラミン六酢酸(
TTHA)、イミノジ酢酸(IDA)及びイミノジプロ
ピオン酸(IDP)を各々単独で用いた。oCuC72”2H200, 25 mol/lO chelation north side 0.4 mol/l0 formaldehyde
0.05 mol/lQ glycine 0
.. 03 mol/l* Chelating agents include disodium ethylenediaminetetraacetate (EDTA-2Na), hydroxyethylethylenediaminetriacetic acid (HEDTA)
, diethylenetriaminepentaacetic acid (DTPA), nitrilotriacetic acid (NTA), triethylenetetraminehexaacetic acid (
TTHA), iminodiacetic acid (IDA) and iminodipropionic acid (IDP) were each used alone.
実施例1と同様にしてめっき試料を作成し、引張り強度
及び伸び率を測定した。その結果、いずれのキレート化
剤を用いた場合にも、pH6〜10の範囲で、引張り強
度50〜80 kg/ mm2伸び率2.5〜4.0%
のめつき皮膜が形成された。A plating sample was prepared in the same manner as in Example 1, and its tensile strength and elongation were measured. As a result, no matter which chelating agent was used, the tensile strength was 50 to 80 kg/mm2 and the elongation rate was 2.5 to 4.0% in the pH range of 6 to 10.
A plating film was formed.
実施例3 下記組成のめっき液を調製した。Example 3 A plating solution having the following composition was prepared.
oCuC72・2H200,25モル/l0エチレンジ
アミン四酢酸 0.4 モル/l0添加剤成分(A)7
0グリシン 0.03モル/l米 添加
剤成分(A)としては、パラホルムアルデヒドについて
は1.5g/7.ヒドラジン、ヒドラジン塩酸塩、ヒド
ラジン酢酸塩及び硫酸ヒドラジンについては0.005
モル/I!、ポリアクリルアミド(Mw2000〜60
00)及びポリアクリルアミド(Mw700000〜1
000000 )については0.Ig/7を各々単独で
添加した。oCuC72・2H200, 25 mol/l0 Ethylenediaminetetraacetic acid 0.4 mol/l0 Additive component (A) 7 0 Glycine 0.03 mol/l rice Additive component (A) is 1.5 g/l for paraformaldehyde. 7. 0.005 for hydrazine, hydrazine hydrochloride, hydrazine acetate and hydrazine sulfate
Mol/I! , polyacrylamide (Mw2000~60
00) and polyacrylamide (Mw700000~1
000000) is 0. Ig/7 was added individually.
実施例1と同様にしてめっき試料を作成し、引張り強度
及び伸び率を測定した。その結果、いずれの添加剤成分
(A)を用いた場合にも、pH6〜10の範囲内におい
て、引張り強度50〜80kg/m1I12、伸び率2
.5〜4.0%のめっき皮膜が形成された。A plating sample was prepared in the same manner as in Example 1, and its tensile strength and elongation were measured. As a result, no matter which additive component (A) was used, within the pH range of 6 to 10, the tensile strength was 50 to 80 kg/m1I12, and the elongation rate was 2.
.. A plating film of 5 to 4.0% was formed.
実施例4 下記組成のめっき液を調製した。Example 4 A plating solution having the following composition was prepared.
0CuC72−2H200,25モル/l0エチレンジ
アミン四酢酸 0.4 モル/lOホルムアルデヒド
0.05モル/ItO添加剤成分(B)蝦
0.03モル/l※ 添加剤成分(B)としては、アラ
ニン、N−メチルグリシン、リジン、バリン、ロイシン
及びグルタミン酸を各々単独で用いた。0CuC72-2H200, 25 mol/l0 ethylenediaminetetraacetic acid 0.4 mol/lO formaldehyde
0.05 mol/ItO additive component (B) shrimp
0.03 mol/l* As the additive component (B), alanine, N-methylglycine, lysine, valine, leucine, and glutamic acid were each used alone.
実施例1と同様にしてめっき試料を作成し、引張り強度
及び伸び率を測定した。その結果、いずれの添加剤成分
(B)を用いた場合にも、pH6〜10の範囲内におい
て、引張り強度50〜80’g/mm2、伸び率2.5
〜4.0%のめっき皮膜が形成された。A plating sample was prepared in the same manner as in Example 1, and its tensile strength and elongation were measured. As a result, no matter which additive component (B) was used, within the pH range of 6 to 10, the tensile strength was 50 to 80'g/mm2, and the elongation rate was 2.5.
~4.0% plating film was formed.
実施例5 下記組成のめっき液を調製した。Example 5 A plating solution having the following composition was prepared.
C浴 D浴
モル/l モル/l
oCuC12・2H20
0エチレンジアミン四酢酸
Oホルムアルデヒド
0グリシン
xcz
0、 25 0. 25
0.4 0.4
0、 05 0. 05
0、 03 0.03
上記C浴及びD浴を用いて、
浴温50℃、
pH
8で陰極電流密度2及び3A/dm2の各々の条件で、
大きさ60mmX 100mmのアスペクト比の異なる
プリント基板上に、30μm厚のめっき皮膜を形成させ
た。その後プリント基板のラウンド部とスルーホール部
のめっき膜厚を測定し、両者の比から均一電着性を求め
た。結果を第3図に示す。C bath D bath Mol/l Mol/l oCuC12・2H20 0 Ethylenediaminetetraacetic acid O Formaldehyde 0 Glycine xcz 0, 25 0. 25 0.4 0.4 0, 05 0. 05 0, 03 0.03 Using the above C bath and D bath, under the conditions of bath temperature 50 ° C., pH 8, and cathode current density 2 and 3 A/dm2, respectively,
Plating films with a thickness of 30 μm were formed on printed circuit boards of different aspect ratios, each having a size of 60 mm×100 mm. Thereafter, the thickness of the plating film on the round part and through-hole part of the printed circuit board was measured, and the uniform electrodeposition was determined from the ratio of the two. The results are shown in Figure 3.
従来のピロリン酸銅めっき液(以下、従来浴という)を
用いて同様に均一電着性を測定した結果も第3図に併せ
て示す。FIG. 3 also shows the results of similarly measuring uniform electrodeposition using a conventional copper pyrophosphate plating solution (hereinafter referred to as conventional bath).
第3図から、C浴及びD浴はいずれも従来浴に比して均
一電着性に優れたものであることが判る。From FIG. 3, it can be seen that both C bath and D bath are superior in uniform electrodeposition compared to the conventional bath.
特に、KCIを含有したD浴は、優れた均一電着性を示
すものであった。In particular, bath D containing KCI showed excellent uniform electrodeposition.
第1図は、実施例1のめっき皮膜の引張り強度の測定結
果のグラフ、第2図は、実施例1のめっき皮膜の伸び率
の測定結果のグラフ、第3図は、実施例5のめっき液の
均一電着性試験結果のグラフである。
(以
上)
第
図
第
図
め、も う夜dQpH
第
図
基項のアスへクト比
手続補正書帽発)□。
平成3年5月2子田
特許庁長官 植 松 敏 殿
事件の表示
平成2年特許願第46991、
発明の名称
電気銅めっき液
補正をする者
事件との関係 特許出願人
石原薬品株式会社Fig. 1 is a graph of the measurement results of the tensile strength of the plating film of Example 1, Fig. 2 is a graph of the measurement results of the elongation rate of the plating film of Example 1, and Fig. 3 is a graph of the measurement results of the plating film of Example 5. It is a graph of the uniform electrodeposition test result of a liquid. (Above) Figure 1, dQpH Figure basis aspect ratio procedure amendment letter) □. May 2, 1991 Koda Commissioner of the Patent Office Satoshi Uematsu Display of the case 1990 Patent Application No. 46991, Name of the invention Relationship to the case of person amending electrolytic copper plating solution Patent applicant Ishihara Pharmaceutical Co., Ltd.
Claims (3)
2は基−COOM_5又は基−CH_2CH_2OH、
nは0〜2の整数を示し、M_1、M_2、M_3、M
_4及びM_5は同一又は異なって各々水素原子、K、
Na又はNH_4である)で表わされる化合物、及び一
般式 ▲数式、化学式、表等があります▼ (式中、X_3は水素原子、基−CH_2COOM_6
、基−CH_2CH_2COOM_7又は 基−CH_2CH_2OH、X_4は基−CH_2CO
OM_8、基−CH_2CH_2COOM_9又は基−
CH_2CH_2OH、X_5は基−CH_2COOM
_1_0、基−CH_2CH_2COOM_1_1又は
基−CH_2CH_2OHを示し、M_6、M_7、M
_8、M_9、M_1_0及びM_1_1は同一又は異
なって各々水素原子、K、Na又はNH_4である)で
表わされる化合物の少なくとも1種からなるキレート化
剤0.01〜2モル/l、並びに c)ホルムアルデヒド0.01〜1モル/l、ホルムア
ルデヒド重合体0.3〜30g/l、ヒドラジン化合物
0.0005〜0.1モル/l及びポリアクリルアミド
0.005〜10g/lの少なくとも1種 を含有する水溶液からなる電気銅めっき液。(1) a) Copper compound 0.01 to 1 mol/l b) General formula ▲ Numerical formula, chemical formula, table, etc. ▼ (In the formula, X_1 is a hydrogen atom or group -COOM_4, X_
2 is a group -COOM_5 or a group -CH_2CH_2OH,
n represents an integer from 0 to 2, M_1, M_2, M_3, M
_4 and M_5 are the same or different and each represents a hydrogen atom, K,
There are compounds represented by Na or NH_4), and general formulas ▲ mathematical formulas, chemical formulas, tables, etc. ▼ (in the formula, X_3 is a hydrogen atom, the group -CH_2COOM_6
, group -CH_2CH_2COOM_7 or group -CH_2CH_2OH, X_4 is group -CH_2CO
OM_8, group -CH_2CH_2COOM_9 or group -
CH_2CH_2OH, X_5 is a group -CH_2COOM
_1_0, represents the group -CH_2CH_2COOM_1_1 or the group -CH_2CH_2OH, M_6, M_7, M
_8, M_9, M_1_0 and M_1_1 are the same or different and each is a hydrogen atom, K, Na or NH_4) chelating agent 0.01 to 2 mol/l, and c) formaldehyde An aqueous solution containing at least one of 0.01 to 1 mol/l, formaldehyde polymer 0.3 to 30 g/l, hydrazine compound 0.0005 to 0.1 mol/l, and polyacrylamide 0.005 to 10 g/l. An electrolytic copper plating solution consisting of
2は基−COOM_5又は基−CH_2CH_2OH、
nは0〜2の整数を示し、M_1、M_2、M_3、M
_4及びM_5は同一又は異なって各々水素原子、K、
Na又はNH_4である)で表わされる化合物、及び一
般式 ▲数式、化学式、表等があります▼ (式中、X_3は水素原子、基−CH_2COOM_6
、基−CH_2CH_2COOM_7又は 基−CH_2CH_2OH、X_4は基−CH_2CO
OM_8、基−CH_2CH_2COOM_9又は基−
CH_2CH_2OH、X_5は基−CH_2COOM
_1_0、基−CH_2CH_2COOM_1_1又は
基−CH_2CH_2OHを示し、M_6、M_7、M
_8、M_9、M_1_0及びM_1_1は同一又は異
なって各々水素原子、K、Na又はNH_4である)で
表わされる化合物の少なくとも1種からなるキレート化
剤0.01〜2モル/l、 c)ホルムアルデヒド0.01〜1モル/l、ホルムア
ルデヒド重合体0.3〜30g/l、ヒドラジン化合物
0.0005〜0.1モル/l及びポリアクリルアミド
0.005〜10g/lの少なくとも1種、並びに d)一般式 ▲数式、化学式、表等があります▼ (式中、Z_1、Z_2、Z_3及びZ_4は同一又は
異なって各々水素原子又はメチル基、Q_1は水素原子
、K、Na又はNH_4、mは1〜15の整数を示す。 )で表わされる化合物、及び一般式 ▲数式、化学式、表等があります▼ (式中、Aは水素原子、水酸基、−SH、 基NH_2CO−、基−COOQ_3、アミノ基、基N
H_2−C−NH−、基CH_3CH_2S−又はNH 基NH_2CONH−、Z_5、Z_6及びZ_7は同
一又は異なって各々水素原子、メチル基又はエチル基、
lは0〜4の整数、kは0又は1を示し、Q_2及びQ
_3は同一又は異なって各々水素原子、K、Na又はN
H_4である)で表わされる化合物の少なくとも1種0
.006〜1モル/l を含有する水溶液からなる電気銅めっき液。(2) a) Copper compound 0.01-1 mol/l b) General formula ▲ Numerical formula, chemical formula, table, etc. ▼ (In the formula, X_1 is a hydrogen atom or a group -COOM_4, X_
2 is a group -COOM_5 or a group -CH_2CH_2OH,
n represents an integer from 0 to 2, M_1, M_2, M_3, M
_4 and M_5 are the same or different and each represents a hydrogen atom, K,
There are compounds represented by Na or NH_4), and general formulas ▲ mathematical formulas, chemical formulas, tables, etc. ▼ (in the formula, X_3 is a hydrogen atom, the group -CH_2COOM_6
, group -CH_2CH_2COOM_7 or group -CH_2CH_2OH, X_4 is group -CH_2CO
OM_8, group -CH_2CH_2COOM_9 or group -
CH_2CH_2OH, X_5 is a group -CH_2COOM
_1_0, represents the group -CH_2CH_2COOM_1_1 or the group -CH_2CH_2OH, M_6, M_7, M
_8, M_9, M_1_0 and M_1_1 are the same or different and each is a hydrogen atom, K, Na or NH_4) A chelating agent consisting of at least one compound represented by 0.01 to 2 mol/l, c) Formaldehyde 0 .01 to 1 mol/l, formaldehyde polymer 0.3 to 30 g/l, hydrazine compound 0.0005 to 0.1 mol/l, and at least one of polyacrylamide 0.005 to 10 g/l, and d) General Formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (In the formula, Z_1, Z_2, Z_3 and Z_4 are the same or different and each is a hydrogen atom or a methyl group, Q_1 is a hydrogen atom, K, Na or NH_4, m is 1 to 15 ), as well as general formulas ▲mathematical formulas, chemical formulas, tables, etc. N
H_2-C-NH-, group CH_3CH_2S- or NH group NH_2CONH-, Z_5, Z_6 and Z_7 are the same or different and are each a hydrogen atom, a methyl group or an ethyl group,
l is an integer from 0 to 4, k is 0 or 1, Q_2 and Q
_3 are the same or different and each is a hydrogen atom, K, Na or N
H_4) at least one compound represented by 0
.. An electrolytic copper plating solution consisting of an aqueous solution containing 0.006 to 1 mol/l.
リ土類金属のハロゲン化物及び硫酸塩並びにアンモニウ
ムのハロゲン化物及び硫酸塩の少なくとも1種0.01
〜3モル/lを含有する請求項第1項又は第2項のいず
れかに記載の電気銅めっき液。(3) At least one of alkali metal halides and sulfates, alkaline earth metal halides and sulfates, and ammonium halides and sulfates: 0.01
The electrolytic copper plating solution according to claim 1 or 2, wherein the electrolytic copper plating solution contains up to 3 mol/l.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4699190A JPH04120290A (en) | 1990-02-26 | 1990-02-26 | Copper electroplating solution |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4699190A JPH04120290A (en) | 1990-02-26 | 1990-02-26 | Copper electroplating solution |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04120290A true JPH04120290A (en) | 1992-04-21 |
Family
ID=12762667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4699190A Pending JPH04120290A (en) | 1990-02-26 | 1990-02-26 | Copper electroplating solution |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04120290A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0544075A (en) * | 1991-08-15 | 1993-02-23 | Nippon Riironaale Kk | Copper striking method substituted for electroless copper plating |
JP2002506927A (en) * | 1998-03-20 | 2002-03-05 | セミトウール・インコーポレーテツド | Apparatus and method for electrolytically depositing metal on a work member |
WO2006021031A1 (en) * | 2004-08-23 | 2006-03-02 | James Cook University | Process for copper electrowinning and electrorefining |
JP2009024203A (en) * | 2007-07-18 | 2009-02-05 | Okuno Chem Ind Co Ltd | Electrolytic copper plating |
AU2005276939B2 (en) * | 2004-08-23 | 2009-11-19 | James Cook University | Process for copper electrowinning and electrorefining |
JP2011195893A (en) * | 2010-03-19 | 2011-10-06 | Ishihara Chem Co Ltd | Electrolytic copper-plating method |
JP6908954B1 (en) * | 2020-09-07 | 2021-07-28 | 精一 林 | Liquid activation device for various liquids |
CN113789553A (en) * | 2021-11-17 | 2021-12-14 | 深圳市创智成功科技有限公司 | Nickel plating solution applied to printed circuit board and nickel electroplating method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5116893A (en) * | 1974-08-01 | 1976-02-10 | Casio Computer Co Ltd | EKISHOHYOJISEIGYOSOCHI |
JPS5489942A (en) * | 1977-12-21 | 1979-07-17 | Hull & Co R O | Acid bath solution for plating copper and nitrogennsulfur composition |
JPS60141889A (en) * | 1983-12-29 | 1985-07-26 | Hitachi Ltd | Plating method |
-
1990
- 1990-02-26 JP JP4699190A patent/JPH04120290A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5116893A (en) * | 1974-08-01 | 1976-02-10 | Casio Computer Co Ltd | EKISHOHYOJISEIGYOSOCHI |
JPS5489942A (en) * | 1977-12-21 | 1979-07-17 | Hull & Co R O | Acid bath solution for plating copper and nitrogennsulfur composition |
JPS60141889A (en) * | 1983-12-29 | 1985-07-26 | Hitachi Ltd | Plating method |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0544075A (en) * | 1991-08-15 | 1993-02-23 | Nippon Riironaale Kk | Copper striking method substituted for electroless copper plating |
JP2002506927A (en) * | 1998-03-20 | 2002-03-05 | セミトウール・インコーポレーテツド | Apparatus and method for electrolytically depositing metal on a work member |
JP4642229B2 (en) * | 1998-03-20 | 2011-03-02 | セミトウール・インコーポレーテツド | Apparatus and method for electrolytically depositing copper on a semiconductor work member |
WO2006021031A1 (en) * | 2004-08-23 | 2006-03-02 | James Cook University | Process for copper electrowinning and electrorefining |
AU2005276939B2 (en) * | 2004-08-23 | 2009-11-19 | James Cook University | Process for copper electrowinning and electrorefining |
US8293093B2 (en) | 2004-08-23 | 2012-10-23 | James Cook University | Process for cooper electrowinning and electrorefining |
JP2009024203A (en) * | 2007-07-18 | 2009-02-05 | Okuno Chem Ind Co Ltd | Electrolytic copper plating |
JP2011195893A (en) * | 2010-03-19 | 2011-10-06 | Ishihara Chem Co Ltd | Electrolytic copper-plating method |
JP6908954B1 (en) * | 2020-09-07 | 2021-07-28 | 精一 林 | Liquid activation device for various liquids |
JP2022044531A (en) * | 2020-09-07 | 2022-03-17 | 精一 林 | Liquid activator for various types of liquids |
CN113789553A (en) * | 2021-11-17 | 2021-12-14 | 深圳市创智成功科技有限公司 | Nickel plating solution applied to printed circuit board and nickel electroplating method thereof |
CN113789553B (en) * | 2021-11-17 | 2022-02-08 | 深圳市创智成功科技有限公司 | Nickel plating solution applied to printed circuit board and nickel electroplating method thereof |
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