JPH04115533A - Manufacture of semiconductor element and thermal cvd device - Google Patents
Manufacture of semiconductor element and thermal cvd deviceInfo
- Publication number
- JPH04115533A JPH04115533A JP2233337A JP23333790A JPH04115533A JP H04115533 A JPH04115533 A JP H04115533A JP 2233337 A JP2233337 A JP 2233337A JP 23333790 A JP23333790 A JP 23333790A JP H04115533 A JPH04115533 A JP H04115533A
- Authority
- JP
- Japan
- Prior art keywords
- inner tube
- gas
- tube
- oc2h5
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 238000005192 partition Methods 0.000 claims description 10
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 abstract description 19
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 4
- 230000004913 activation Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000029305 taxis Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、Ｄ−ＲＡＭ （ダイナミック−ランダム・
アクセス・メモリ）における蓄積容量形成用絶縁膜を高
品質に製造できる半導体素子の製造方法および熱ＣＶＤ
装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to D-RAM (dynamic-random
Semiconductor device manufacturing method and thermal CVD capable of manufacturing high quality insulating film for storage capacitor formation in (access memory)
It is related to the device.
〔従来の技術］
Ｄ−ＲＡＭにおける蓄積容量（ｃｓ）形式用絶縁膜（以
下Ｃｓ用絶縁膜と称する）としては、現在はＬＰＣＶＤ
法により形成されたＳｉ：＋）Ｌ膜が主ニ使用すレテイ
ルカ、「応用物理Ｊ Ｖｏｌ、５Ｂ、Ｎｏ、１１゜１９
８９ Ｐ １６２２〜１６２８に示すようにタンタル酸
化膜（以下Ｔａ、Ｊのみ記す）のＣｓ用絶縁膜への適用
が広く検討されている。特にＴａ（ＯＣ２Ｈ５）５ ＋
０□の熱反応（〜６００°Ｃ）で得られるＣＶＤ膜は
段差被覆性がよいため、デバイスの３次元化によって高
集積化を進めているＤ−ＲＡＭへの適用が進められてい
る。[Prior Art] At present, LPCVD is used as an insulating film for storage capacitor (CS) type (hereinafter referred to as Cs insulating film) in D-RAM.
The Si:+)L film formed by the method is mainly used in Reteilka, Applied Physics J Vol.
As shown in 89P 1622-1628, the application of tantalum oxide films (hereinafter only Ta and J will be referred to) as insulating films for Cs has been widely studied. Especially Ta(OC2H5)5 +
Since the CVD film obtained by a thermal reaction of 0□ (~600° C.) has good step coverage, it is being applied to D-RAMs, which are becoming highly integrated due to three-dimensional devices.
しかしながら、上記の反応により得られるＴａ、Ｏ。 However, Ta, O obtained by the above reaction.
膜では、膜中に多量のＣを含むことになる。反応を完全
に進めるため、温度を６５０°Ｃ以上にすると、Ｔａｘ
ｅｓ膜は−様なアモルファス膜ではなく、リーク電流の
多い多結晶膜になり、Ｃｓ用絶縁膜としては適さなくな
る。The film will contain a large amount of C in the film. Tax
The ES film is not a --like amorphous film but a polycrystalline film with a large leakage current, making it unsuitable as an insulating film for Cs.
したがって、Ｔａ（ＯＣ２Ｈ５）５ Ｏｚ系ＣＶ Ｄ
ＴａｚＯｓ膜中のＣ含有は不可避とされていた。Therefore, Ta(OC2H5)5Oz-based CV D
C inclusion in the TazOs film was thought to be unavoidable.
また、ＣＶ Ｄ Ｔａｘｅｓ膜を得るための従来のＣ
ＶＤ炉の構造では、材料ガス導入口に近い方のガス温度
がどうしても低めになり、１００枚、１５０枚のウェハ
を同時にバッチ処理すると、ウェハ間の形成膜厚に差が
生じる。Also, conventional C to obtain CV D Taxes film
In the structure of a VD furnace, the gas temperature closer to the material gas inlet is inevitably lower, and when batch processing 100 or 150 wafers at the same time, a difference occurs in the film thickness formed between the wafers.
請求項１の発明は、前記従来技術が持っている問題のう
ち、形成したＣ Ｖ Ｄ Ｔａｘｅｓ膜中に多量のＣ
が含まれるリーク電流が多いという問題点について解決
した半導体素子の製造方法を提供するものである。The invention of claim 1 solves the problem of the prior art, in that a large amount of C in the formed C VD Taxes film.
The present invention provides a method for manufacturing a semiconductor device that solves the problem of a large amount of leakage current.
また、請求項２の発明は前記従来技術が持っている問題
点のうち、ＣＶＤ炉のガス導入口近傍のガス温度が低い
ことに起因するウェハ間の形成膜厚に差が生じるという
問題点について解決した熱ＣＶＤ装置を提供するもので
ある。Further, the invention of claim 2 addresses the problem of the difference in film thickness between wafers caused by the low gas temperature near the gas inlet of the CVD furnace, which is one of the problems of the prior art. The present invention provides a thermal CVD apparatus that solves the above problems.
請求項１の発明は前記問題点を解決するために、半導体
素子の製造方法において、Ｔａ（ＯＣ２Ｈ５）５ Ｏ
□系の代りにＴａ （ＯＣｚＨｓ） ｓ ＋ Ｏｓ系を
熱反応させるようにしたものである。In order to solve the above problem, the invention of claim 1 provides a method for manufacturing a semiconductor device, in which Ta(OC2H5)5O
Instead of the □ system, a Ta (OCzHs) s + Os system is subjected to a thermal reaction.
また、請求項２の発明は、前記問題点を解決するために
、熱ＣＶＤ装置において、温度の低いガス程下方から導
入する炉壁下部に仕切板を設けたものである。Moreover, in order to solve the above-mentioned problem, the invention according to claim 2 is a thermal CVD apparatus in which a partition plate is provided at the lower part of the furnace wall, into which lower temperature gas is introduced from below.
請求項１の発明によれば、以上のように半導体素子の製
造方法において、０３を酸化種として用いることにより
、ＣＶ Ｄ Ｔａｘｅｓ膜中にＣ量が少なくなり、高
品質なＴａｘｅｓ ＩＱを形成することができ、リーク
電流を抑制することができ、したがって、前記問題点を
除去できる。According to the invention of claim 1, in the method for manufacturing a semiconductor device as described above, by using 03 as an oxidizing species, the amount of C in the CVD Taxes film is reduced, and a high quality Taxes IQ can be formed. Therefore, the leakage current can be suppressed, and the above-mentioned problem can therefore be eliminated.
また、請求項２の発明によれば、以上のように熱ＣＶＤ
装置を構成したので、炉壁下部の仕切板により、温度の
低いガスはど下方の仕切板から導入され、炉内の多数の
ウェハ間の膜厚を均一にでき、したがって、前記問題点
を除去できる。Further, according to the invention of claim 2, as described above, thermal CVD
With this structure, the low-temperature gas is introduced from the partition plate at the bottom of the furnace wall, making it possible to make the film thickness uniform among the many wafers in the furnace, thus eliminating the above-mentioned problem. can.
以下、この発明の半導体素子の製造方法および熱ＣＶＤ
装置の実施例について図面に基づき説明する０図はこの
発明の半導体素子の製造方法に適用される熱ＣＶＤ装置
の構成説明図である。Hereinafter, a method for manufacturing a semiconductor element of the present invention and a thermal CVD method will be described.
Embodiments of the apparatus will be explained based on the drawings. FIG. 0 is a diagram illustrating the configuration of a thermal CVD apparatus applied to the method of manufacturing a semiconductor element of the present invention.
図中の１はドーム状の炉本体をなすアウタチューブであ
り、このアウタチューブ１の底部の中央には、保温筒２
が設けられ、この保温筒２の上面にボー）３ａに載置さ
れた多数枚のウェハ３が重ねられるようになっている。1 in the figure is an outer tube forming the dome-shaped furnace body, and in the center of the bottom of this outer tube 1 is a heat insulating cylinder 2.
is provided, and a large number of wafers 3 placed on a bow 3a are stacked on the top surface of this heat-insulating cylinder 2.
アウタチューブ１内において、上記保温筒２゜ウェハ３
を内包するように、インナチューブ４がアウタチューブ
１と同心状になるように、インナチューブ１内に配置さ
れている。Inside the outer tube 1, the heat insulating cylinder 2゜wafer 3
The inner tube 4 is arranged within the inner tube 1 so as to be concentric with the outer tube 1 so as to enclose the inner tube 4 .
このアウタチューブ１およびインナチューブ４の底部近
傍において、アウタチューブｌを貫通してインナチュー
ブ４に吸入管５が連結されており、この吸入管５を通し
て、Ｏ３ガスがインナチューブ４内に吸入されるように
なっている。A suction pipe 5 is connected to the inner tube 4 through the outer tube 1 near the bottom of the outer tube 1 and the inner tube 4, and O3 gas is sucked into the inner tube 4 through this suction pipe 5. It looks like this.
この吸入管５の上方において、別の吸入管６の一端がア
ウタチューブ１を貫通してインナチューブ４に連結され
ている。この吸入管６の他端は容器７内に挿入されてい
る。Above this suction pipe 5, one end of another suction pipe 6 passes through the outer tube 1 and is connected to the inner tube 4. The other end of this suction pipe 6 is inserted into a container 7.
容器７内にはＴａ （ＯＣｚＨｓ） ｓ ８が充填され
、この容器７にはＡｒが注入されるようになっている。The container 7 is filled with Ta (OCzHs) s 8, and Ar is injected into the container 7.
また、容器７とアウタチューブ１間において、吸入管６
の外周面には、ヒータ９が巻装され、吸入管６を加熱し
ており、この吸入管６を通して容器７内のＴａ（ＯＣｉ
Ｈｓ）ｓ ８が加熱されながらインナチューブ４内に吸
入されるようになっている。Also, between the container 7 and the outer tube 1, the suction pipe 6
A heater 9 is wrapped around the outer circumferential surface of the container 7 to heat the suction pipe 6.
Hs)s 8 is drawn into the inner tube 4 while being heated.
上記インナチューブ４の底部近傍において、吸入管５と
６の間に位置する部位には、炉壁下部を仕切るドーナツ
板状の仕切板１０が取り付けられている。この仕切板１
０の内径側と保温筒２の外面間には、所定の間隔が設け
られており、吸入管５から吸入されたより、低温のＯ３
ガスや吸入管６から吸入されたＴａ（ＯＣ２Ｈ５）５
８などが保温筒２の外周面に循環しなからウェハ３方向
に上昇するようになっている。Near the bottom of the inner tube 4, a donut-shaped partition plate 10 is attached to a portion located between the suction pipes 5 and 6 to partition the lower part of the furnace wall. This partition plate 1
A predetermined gap is provided between the inner diameter side of the O3 and the outer surface of the heat insulating cylinder 2.
Ta(OC2H5)5 inhaled from gas or suction pipe 6
8 etc. do not circulate around the outer circumferential surface of the heat insulating cylinder 2, but rise toward the wafer 3.
また、アウタチューブｌの底部近傍には排気管１１が連
結されている。このアウタチューブ１の外周面にもヒー
タ１２が配設されており、このヒータ１２により、アウ
タチューブ１およびインナチューブ４の内部を加熱する
ようになっている。Further, an exhaust pipe 11 is connected near the bottom of the outer tube l. A heater 12 is also provided on the outer peripheral surface of the outer tube 1, and the heater 12 heats the inside of the outer tube 1 and the inner tube 4.
このような熱ＣＶＤ装置を用いて、ＬＰＣＶＤＴａｚＯ
ｓ膜を形成する場合に、まず、ボート３ａにウェハ３を
多数枚載置して保温筒２上に置き、ヒータ１２でアウタ
チューブ１およびインナチューブ４を加熱するとともに
、ヒータ９により、吸入管６を加熱する。Using such a thermal CVD equipment, LPCVDTazO
When forming the S film, first, a large number of wafers 3 are placed on the boat 3a and placed on the heat insulating tube 2, the outer tube 1 and the inner tube 4 are heated by the heater 12, and the suction tube is heated by the heater 9. Heat 6.
この状態でＯ３ガスは分解しない程度に十分あたためら
れてから吸入管５を通して、炉内のインナチューブ４内
に吸入され、ウェハ３のある部位に入っていく。０３ガ
スの流量は１００ ＡＣＣ＋ａ程度である。In this state, the O3 gas is sufficiently warmed to the extent that it does not decompose, and then is sucked into the inner tube 4 in the furnace through the suction pipe 5, and enters a certain part of the wafer 3. The flow rate of 03 gas is about 100 ACC+a.
一方、容器７内に充填されたＴａ（ＯＣＪｓ） ｓ ８
の方は〜１２０°Ｃに保たれた状態からＡｒをキャリア
ガスとして、２００ ＡＣＣ劉程度流すことにより、吸
入管６を経てインナチューブ４内に導入される。ここで
、炉までのガスラインすなわち、吸入管６はヒータ９に
より１５０°Ｃ程度に保つ必要がある。On the other hand, Ta(OCJs) s 8 filled in the container 7
This is introduced into the inner tube 4 through the suction pipe 6 by flowing about 200 ACC with Ar as a carrier gas while the temperature is maintained at ~120°C. Here, the gas line to the furnace, that is, the suction pipe 6, needs to be maintained at about 150°C by the heater 9.
上記のようにして、インナチューブ４内に導入してＴａ
（ＯＣｚｌｌｓ）ｓ／ Ｏｘ混合ガスをヒータ１２の加
熱により、５００°Ｃ〜６００°ＣでＯ３ガスを酸化活
性種として反応させて、Ｔａｘｅｓ膜をウェハ３に形成
する０反応圧力はＯ３１０ Ｔｏｒｒ〜Ｏ３５０ Ｔｏ
ｒｒ程度とする。Introduce Ta into the inner tube 4 as described above.
(OCzlls)s/Ox mixed gas is heated by the heater 12 to react with O3 gas as an oxidizing active species at 500°C to 600°C to form a Taxes film on the wafer 3. The reaction pressure is O310 Torr to O350. To
It should be about rr.
以上、説明したように、請求項１の発明によれば、Ｔａ
（ＯＣｚＨｓ） ｓの酸化活性種として０□よりも活
性なＯ３を利用するようにしたので、Ｔａ （ＯＣ２Ｈ
５） ｓの酸化性雰囲気中での熱反応により形成される
ＣＶＤ−ＴａｚＪ膜中の含有Ｃ量の減少が期待でき、リ
ーク電流を抑制して電気的特性の向上が可能となる。As explained above, according to the invention of claim 1, Ta
Since O3, which is more active than 0□, is used as the oxidation active species of (OCzHs)s, Ta (OCzHs)
5) It is expected that the amount of C contained in the CVD-TazJ film formed by the thermal reaction of s in an oxidizing atmosphere will be reduced, and leakage current can be suppressed to improve electrical characteristics.
また、請求項２の発明によれば、炉壁の下部に仕切板を
設け、温度の低いガスはど仕切板の下部から炉内に導入
するようにしたので、冷えたままのＯ３ガスが炉内の反
応部に直接入ることが避けられ、インナチューブ内で加
温されてから反応部に入り、形成膜厚のウェハ間均−性
の向上が見込まれる。Further, according to the invention of claim 2, a partition plate is provided at the lower part of the furnace wall, and the low temperature gas is introduced into the furnace from the lower part of the partition plate, so that the cold O3 gas is fed into the furnace. Since the inner tube is heated within the inner tube and then enters the reaction section, it is expected that the uniformity of the formed film thickness among wafers will be improved.
図はこの発明の熱ＣＶＤ装置の一実施例の構成説明図で
ある。
ｌ・・・アウタチューブ、２・・・保温筒、３・・・ウ
ェハ、４・・・インナチューブ、５．６・・・吸入管、
７・・・容器、１３ ＝Ｔａ（ＯＣ２Ｈ５）５、９．１
２・・・ヒータ、１０ ・・・仕切板。
４：イン大手ユーク゛。
８ ： Ｔｏ（ｃＯ２Ｈ５）５
９、＋２：ヒータ
１０イｔトηネ及
本発明のオ鼻威訟屯８月図The figure is an explanatory diagram of the configuration of an embodiment of the thermal CVD apparatus of the present invention. l...Outer tube, 2...Heat insulation tube, 3...Wafer, 4...Inner tube, 5.6...Suction pipe,
7... Container, 13 = Ta (OC2H5) 5, 9.1
2... Heater, 10... Partition plate. 4: In-major user. 8: To (cO2H5) 5 9, +2: Heater 10 t η and the present invention.
Claims (2)
ける蓄積容量形成用絶縁膜に適用するＴａ（ＯＣ＿２Ｈ
＿５）＿５の酸化種として、Ｏ＿３ガスを用いることを
特徴とする半導体素子の製造方法。(1) Ta (OC_2H) applied to insulating film for storage capacitor formation in dynamic random access memory
_5) A method for manufacturing a semiconductor device, characterized in that O_3 gas is used as the oxidizing species of _5.
に設置され、熱処理用のウェハをその上部に載置する保
温筒を内部に有する第１のインナチューブと、 （ｂ）このインナチューブの下部に設けられた仕切板と
、 （ｃ）この仕切板の下方において、上記インナチューブ
に連結され低温のＯ＿３ガスを導入する第１の吸入管と
、 （ｄ）上記仕切板の上方において、上記インナチューブ
に連結されＴａ（ＯＣ＿２Ｈ＿５）＿５を加温しながら
上記インナチューブ内に導入する第２の吸入管と、より
なる熱ＣＶＤ装置。(2) (a) A first inner tube that is installed inside an outer tube that is heated by a heater and has a heat-insulating tube inside which a wafer for heat treatment is placed on top; (b) a lower part of this inner tube; (c) Below the partition plate, a first suction pipe connected to the inner tube and introducing low-temperature O_3 gas; (d) Above the partition plate, a first suction pipe provided in the inner tube. A thermal CVD apparatus comprising a second suction pipe connected to the tube and introducing Ta(OC_2H_5)_5 into the inner tube while heating it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2233337A JPH04115533A (en) | 1990-09-05 | 1990-09-05 | Manufacture of semiconductor element and thermal cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2233337A JPH04115533A (en) | 1990-09-05 | 1990-09-05 | Manufacture of semiconductor element and thermal cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04115533A true JPH04115533A (en) | 1992-04-16 |
Family
ID=16953570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2233337A Pending JPH04115533A (en) | 1990-09-05 | 1990-09-05 | Manufacture of semiconductor element and thermal cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04115533A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998038674A1 (en) * | 1997-02-27 | 1998-09-03 | Micron Technology, Inc. | Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby |
| US6566147B2 (en) | 2001-02-02 | 2003-05-20 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
| US6884475B2 (en) | 2000-05-26 | 2005-04-26 | Micron Technology, Inc. | Chemical vapor deposition method for depositing a high k dielectric film |
| US6888188B2 (en) | 2001-08-17 | 2005-05-03 | Micron Technology, Inc. | Capacitor constructions comprising perovskite-type dielectric materials and having different degrees of crystallinity within the perovskite-type dielectric materials |
| US6943392B2 (en) | 1999-08-30 | 2005-09-13 | Micron Technology, Inc. | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen |
| US6982103B2 (en) | 2001-07-13 | 2006-01-03 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
-
1990
- 1990-09-05 JP JP2233337A patent/JPH04115533A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6325017B1 (en) | 1997-02-27 | 2001-12-04 | Micron Technology, Inc. | Apparatus for forming a high dielectric film |
| US7192889B2 (en) | 1997-02-27 | 2007-03-20 | Micron Technology, Inc. | Methods for forming a high dielectric film |
| WO1998038674A1 (en) * | 1997-02-27 | 1998-09-03 | Micron Technology, Inc. | Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby |
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