JPH04115524A - Method for adding impurities to amorphous slc - Google Patents
Method for adding impurities to amorphous slcInfo
- Publication number
- JPH04115524A JPH04115524A JP23481290A JP23481290A JPH04115524A JP H04115524 A JPH04115524 A JP H04115524A JP 23481290 A JP23481290 A JP 23481290A JP 23481290 A JP23481290 A JP 23481290A JP H04115524 A JPH04115524 A JP H04115524A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- sic
- amorphous sic
- raw material
- type layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 title claims description 3
- 238000000034 method Methods 0.000 title claims description 3
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 2
- 150000002894 organic compounds Chemical class 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はアモルファスＳｉＣを用いる半導体装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor device using amorphous SiC.
（従来の技術）
アモルファスＳｉＣは、太陽電池やエレクトロルミネッ
センス素子に用いられる材料である。アモルファスＳｉ
Ｃのｐ型層を得るためのアクセプタとしてこれまでＢの
添加を行っていた。Ｂを用いる主な理由は２つある。先
ず第一には、アモルファスＳｉではＢの添加によって容
易に低抵抗なｐ型層が得らえることがあげられる。第二
に、アモルファスＳｉＣは真空中で合成する手法が一般
的であるのでＢ２Ｈ６というガスとして供給できるＢが
導入及び制御が容易なためである。しかし、アモルファ
スＳｉＣでは全組成の数％程度のＢを添加しても低抵抗
（抵抗率１×１０７Ωａｍ以下）のｐ型層を得ることは
困難であった。この一つの理由としてＢがアモルファス
ＳｉＣ中では浅い準位を形成しないことが考えられる。(Prior Art) Amorphous SiC is a material used in solar cells and electroluminescent devices. Amorphous Si
Until now, B has been added as an acceptor to obtain a C p-type layer. There are two main reasons for using B. First of all, in amorphous Si, a p-type layer with low resistance can be easily obtained by adding B. Second, since amorphous SiC is generally synthesized in a vacuum, it is easy to introduce and control B, which can be supplied as a gas called B2H6. However, in amorphous SiC, it is difficult to obtain a p-type layer with low resistance (resistivity of 1×10 7 Ωam or less) even when B is added in an amount of several percent of the total composition. One possible reason for this is that B does not form a shallow level in amorphous SiC.
Ｂは結晶Ｓｉでは４５ｍｅＶ程度のイオン化エネルギー
を持つが、結晶ＳｉＣ中では６００ｍｅＶ以上の大きな
イオン化エネルギーを持つ。アクセプタのイオン化エネ
ルギーが大きいとアクセプタからの正孔の放出がほとん
どおきないので低抵抗のｐ型層は得られない。B has an ionization energy of about 45 meV in crystalline Si, but has a large ionization energy of 600meV or more in crystalline SiC. If the ionization energy of the acceptor is large, few holes are emitted from the acceptor, so a p-type layer with low resistance cannot be obtained.
（発明が解決しようとする課題）
結晶ＳｉＣ中でももっとも小さなイオン化エネルギー（
２６０ｍｅＶ）を持つアクセプタはＡｌである。本発明
の目的はアモルファスＳｉＣへのｐ型層形成のためのア
クセプタにＡｌを用いることによって低抵抗のＰ型アモ
ルファスＳｉＣの形成を可能にすることにある。(Problem to be solved by the invention) The lowest ionization energy among crystalline SiC (
260 meV) is Al. An object of the present invention is to enable the formation of low-resistance P-type amorphous SiC by using Al as an acceptor for forming a p-type layer on amorphous SiC.
（課題を解決するための手段）
本発明のアモルファスＳｉＣへの不純物添加法はアモル
ファスＳｉＣへＡ１を添加することによってｐ型環電性
を得ることを特徴とする。(Means for Solving the Problems) The method of adding impurities to amorphous SiC of the present invention is characterized in that p-type ring conductivity is obtained by adding A1 to amorphous SiC.
（実施例） 次に本発明について図面を参照して詳細に説明する。(Example) Next, the present invention will be explained in detail with reference to the drawings.
第１図に本発明の一実施例を説明するためのアモルファ
スＳｉＣ堆積装置の断面の概略図を示す。FIG. 1 shows a schematic cross-sectional view of an amorphous SiC deposition apparatus for explaining one embodiment of the present invention.
第１図の堆積装置は真空チャンバ３内で高周波電源５を
用いてプラズマを発生させ、原料ガス導入孔付下部電極
６を通して供給する原料ガス（例えば５ＩＨ４とＣ２Ｈ
４）を分解しアモルファスＳｉＣを基板ホルダー付上部
電極４に取り付けた基板１上に堆積させる。The deposition apparatus shown in FIG. 1 generates plasma in a vacuum chamber 3 using a high-frequency power source 5, and supplies source gases (for example, 5IH4 and C2H) through a lower electrode 6 with a source gas introduction hole.
4) is decomposed and amorphous SiC is deposited on the substrate 1 attached to the upper electrode 4 with a substrate holder.
この時原料ガスと同時にＡｌの有機化合物または塩化物
（例えば（ＣｎＨ２ｏ＋□）ｍＡｌＣ１３−ｍ、ｎ２ｍ
は整数）を供給することによってＡ１を添加することが
できる。これらの化合物は室温付近では液体または固体
であるので、加熱して蒸発または昇華させて導入する。At this time, an organic compound or chloride of Al (for example, (CnH2o+□) mAlC13-m, n2m
is an integer), A1 can be added. Since these compounds are liquid or solid at around room temperature, they are heated to evaporate or sublimate before being introduced.
この装置を用いてａ −ＳｉＣにＡｌを添加した結果、
１×１０３Ωａｍと従来のＩ Ｘ １０１０７ｆ１に比
べて低抵抗なｐ型層を得ることができた。As a result of adding Al to a-SiC using this device,
It was possible to obtain a p-type layer with a lower resistance of 1×10 3 Ωam than that of the conventional I X 10107f1.
本実施例では原料ガスをプラズマで分解しているが、光
或は熱による分解でもかまわない。In this embodiment, the raw material gas is decomposed by plasma, but it may also be decomposed by light or heat.
本実施例ではＡｌを化合物のガスとして供給しているが
、チャンバ内に金属Ａ１やＡｌＣｌ３等の固体源を置き
加熱蒸発させてもよい。In this embodiment, Al is supplied as a compound gas, but a solid source such as metal A1 or AlCl3 may be placed in the chamber and evaporated by heating.
また、本実施例ではアモルファスＳｉＣの堆積中にＡ１
を添加しているが、堆積後イオン注入法でＡｌを添加し
てもかまわない。In addition, in this example, during the deposition of amorphous SiC, A1
However, Al may be added by ion implantation after deposition.
（発明の効果）
以上説明したように本発明では、ａ −ＳｉＣの低抵抗
ｐ型層を形成することができる。(Effects of the Invention) As explained above, according to the present invention, a low resistance p-type layer of a-SiC can be formed.
第１図は本発明の一実施例を説明するためのアモルファ
スＳｉＣ堆積装置の断面の概略図を示す。
ｌ・・・基板、２・・・絶縁体、３・・・チャンバー、
４・・・基板ホルダー付上部電極、５・・・高周波電源
、６・・・原料ガス導入孔付下部電極FIG. 1 shows a schematic cross-sectional view of an amorphous SiC deposition apparatus for explaining one embodiment of the present invention. l...Substrate, 2...Insulator, 3...Chamber,
4... Upper electrode with substrate holder, 5... High frequency power supply, 6... Lower electrode with raw material gas introduction hole
Claims (1)
導電性を得ることを特徴とするアモルファスＳｉＣへの
不純物添加法。A method for adding impurities to amorphous SiC, characterized in that p-type conductivity is obtained by adding Al to amorphous SiC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23481290A JPH04115524A (en) | 1990-09-05 | 1990-09-05 | Method for adding impurities to amorphous slc |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23481290A JPH04115524A (en) | 1990-09-05 | 1990-09-05 | Method for adding impurities to amorphous slc |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04115524A true JPH04115524A (en) | 1992-04-16 |
Family
ID=16976777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23481290A Pending JPH04115524A (en) | 1990-09-05 | 1990-09-05 | Method for adding impurities to amorphous slc |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04115524A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362684A (en) * | 1991-02-25 | 1994-11-08 | Canon Kabushiki Kaisha | Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same |
| US5363684A (en) * | 1992-11-05 | 1994-11-15 | L. Schuler Gmbh | Device for transferring sheet metal parts in a press installation |
-
1990
- 1990-09-05 JP JP23481290A patent/JPH04115524A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362684A (en) * | 1991-02-25 | 1994-11-08 | Canon Kabushiki Kaisha | Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same |
| US5363684A (en) * | 1992-11-05 | 1994-11-15 | L. Schuler Gmbh | Device for transferring sheet metal parts in a press installation |
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