JPH04105337A - Packaging method of semiconductor element - Google Patents

Packaging method of semiconductor element

Info

Publication number
JPH04105337A
JPH04105337A JP2221376A JP22137690A JPH04105337A JP H04105337 A JPH04105337 A JP H04105337A JP 2221376 A JP2221376 A JP 2221376A JP 22137690 A JP22137690 A JP 22137690A JP H04105337 A JPH04105337 A JP H04105337A
Authority
JP
Japan
Prior art keywords
semiconductor element
electrode
conductive particles
photosensitive film
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2221376A
Other languages
Japanese (ja)
Inventor
Yoshinori Arao
荒尾 義範
Toshimitsu Yamashita
山下 俊光
Yoshiro Takahashi
高橋 良郎
Masao Ikehata
池端 昌夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2221376A priority Critical patent/JPH04105337A/en
Publication of JPH04105337A publication Critical patent/JPH04105337A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a packaging method suitable for high density integration and capable of easy packaging of a semiconductor element, by using characteristics of a photosensitive film for an electrode of a semiconductor element, making conductive particles attach only on the electrode, and connecting the electrode of the semiconductor electrode, on which the conductive particles attach, with the electrode of a semiconductor element packaging substrate. CONSTITUTION:By using characteristics of a photosensitive film 13' for an electrode 12 of a semiconductor element 11, conductive particles 14 are made to attach only on the electrode 12, which is connected with an electrode 26 of a semiconductor element packaging substrate 21. For example, after organic sensitized material 13 for electrophotography is spread on the surface of the semiconductor element 11, a photosensive film 13' is formed by heating and drying, and the surface of the photosensitive film 13' is negatively charged by corona discharge. The objective electrode 12 only is irradiated with a light, and the surface of the film 13' of the irradiated part is turned into a neutral state. When toner containing metal nuclei is negatively charged and brought into contact with the photosensitive film l3', the negatively charged toner attaches on the neutralized photosensitive film surface corresponding with the electrode 13. The semiconductor element obtained in the above manner is mounted on a substrate 21.

Description

【発明の詳細な説明】 (産業上の利用分野) 。[Detailed description of the invention] (Industrial application field).

本発明は、半導体素子の実装方法にIS!!rるもので
ある。
The present invention provides an IS! method for mounting semiconductor devices. ! It is something that can be done.

(従来の技術) 従来、このような分野の技術としては、例えば「日経マ
イクロデバイス」1日経BP社、 1989年7月、第
57〜60頁に記載されるものがあった。
(Prior Art) Conventionally, as a technology in this field, there is one described in, for example, "Nikkei Microdevice", Nikkei BP, July 1989, pp. 57-60.

第2図はかかる従来のCOG (Chip On Gl
ass)での半導体素子の実装工程断面図である。
Figure 2 shows such a conventional COG (Chip On Gl).
FIG.

まず、第2図(a)に示すように、液晶50が搭載され
るガラス基板51(例えば、液晶パネル)に導体52が
形成されている。
First, as shown in FIG. 2(a), a conductor 52 is formed on a glass substrate 51 (for example, a liquid crystal panel) on which a liquid crystal 50 is mounted.

次に、第2図(b)に示すように、そのガラス基板51
の半導体素子の実装部分の電極53に接着剤に導電性粒
子54を混ぜペースト状にしたものを印刷により供給す
る。
Next, as shown in FIG. 2(b), the glass substrate 51
A paste made by mixing conductive particles 54 with adhesive is applied to the electrode 53 of the mounting portion of the semiconductor element by printing.

次に、第2図(c)に示すように、半導体素子を固定す
るための接着剤55をディスペンス方式などで補給する
Next, as shown in FIG. 2(c), an adhesive 55 for fixing the semiconductor element is supplied by a dispensing method or the like.

次に、第2図(d)に示すように、半導体素子56を、
目的の電極同志の位置合わせを(十っだ後、圧力を加え
て、押しっけて仮固定する。接着1155を固めて半導
体素子56を実装する。
Next, as shown in FIG. 2(d), the semiconductor element 56 is
After the desired electrodes are aligned, pressure is applied and they are pushed apart and temporarily fixed. The adhesive 1155 is hardened and the semiconductor element 56 is mounted.

次に、第2図(e)に示すように、半導体素子56の保
護キャップ57の接続と外部室掻取り出し基板58の接
続を行う。
Next, as shown in FIG. 2(e), the protective cap 57 of the semiconductor element 56 and the external chamber scraping board 58 are connected.

(発明が解決しようとする課題) しかしながら、上記した従来の実装方法では、導電粒子
を補給する方法として印刷法を用いているため、電極ピ
ッチの高密度化が困難である。また、液晶部が電極接続
部の面より出っ張っているため印刷が困難である6更に
、印刷位置出しにパネル外形を使う場合、パネル導体形
成の時、位1合わせを精度よくしなければならため、パ
ネル作成に時間がかかる。また、パネルの外形精度を出
さなければならない等のために、液晶パ2ルが高価にな
ると言う問題点があった。
(Problems to be Solved by the Invention) However, in the conventional mounting method described above, since a printing method is used as a method of replenishing conductive particles, it is difficult to increase the density of the electrode pitch. In addition, printing is difficult because the liquid crystal part protrudes from the surface of the electrode connection part6.Furthermore, when using the panel outline for printing positioning, alignment must be made with high accuracy when forming panel conductors. , it takes time to create a panel. In addition, there was a problem in that the liquid crystal panel became expensive because the outer shape of the panel had to be precise.

本発明は、上記問題点を除去するため、印刷法による導
電粒子付着をやめ、半導体素子側、又は毛導体素子実装
基板側に、有機電子写真用感光体を塗布し、感光特性を
利用し金属核入りトナーを接続用電極に付着させた後、
半導体素子と半導体素子実装基板の電極とを合わせ圧力
を加えて、金属核入りトナーの金属核により、電極間を
接続するようにした高密度化に通し、容易に半導体素子
の実装を行うことができる半導体素子の実装方法を提供
することを目的とする。
In order to eliminate the above-mentioned problems, the present invention eliminates the adhesion of conductive particles by the printing method, and coats an organic electrophotographic photoreceptor on the semiconductor element side or the conductive element mounting substrate side, and utilizes the photosensitive properties of the metal. After attaching the toner containing nuclei to the connection electrode,
The semiconductor element and the electrodes of the semiconductor element mounting board are put together and pressure is applied, and the metal core of the metal core toner connects the electrodes. This increases the density, making it easier to mount the semiconductor element. The purpose of the present invention is to provide a method for mounting semiconductor devices that can be implemented easily.

(課題を解決するための手段) 本発明は、半導体素子の実装方法において、半導体素子
の電極に光感光性膜の特性を使い、導電粒子を電極のみ
に付着し、該導電粒子が付着した半導体素子の電極を半
導体素子実装基板の電極に接続するようにしたものであ
る。
(Means for Solving the Problems) The present invention provides a semiconductor device mounting method in which the characteristics of a photosensitive film are used for the electrodes of the semiconductor device, conductive particles are attached only to the electrodes, and the semiconductor device to which the conductive particles are attached is The electrodes of the element are connected to the electrodes of the semiconductor element mounting board.

また、逆に、半導体素子実装基板の電極に前記の方法に
より導電粒子を付着させ、半導体素子の電極を半導体素
子実装基板の電極に接続するようにしたものである。
Conversely, conductive particles are attached to the electrodes of the semiconductor element mounting board by the method described above, and the electrodes of the semiconductor element are connected to the electrodes of the semiconductor element mounting board.

この場合、導電粒子の金属核で光感光膜を破壊し、電極
を導通させることができる。
In this case, the metal core of the conductive particles can destroy the photosensitive film and make the electrode conductive.

(作用) 本発明によれば、上記したように、半導体素子又は半導
体素子実装基板に、有機電子写真用感光体を塗布し、感
光体膜を形成した後、接続電極に感光を照射し、その部
分に金属核入りトナーを付着させる。半導体素子と半導
体素子基板のどちらかに接着剤を補給し、電極同志を位
置合わせする。
(Function) According to the present invention, as described above, an organic electrophotographic photoreceptor is applied to a semiconductor element or a semiconductor element mounting board to form a photoreceptor film, and then the connection electrode is irradiated with a photoreceptor. Attach toner containing metal nuclei to the area. Adhesive is supplied to either the semiconductor element or the semiconductor element substrate, and the electrodes are aligned.

電極同志を接触させ、トナー内の金属核により感光膜が
破壊されるまで圧力を加え、電極間を接続し、接着剤を
硬化させて半導体の実装を行う。
The electrodes are brought into contact and pressure is applied until the photoresist film is destroyed by the metal nuclei in the toner, the electrodes are connected, the adhesive is cured, and the semiconductor is mounted.

従って、電極間ピッチの高密度化と、露光機を使うこと
により、電極照射のための位置合わせを容易に行うこと
ができる。
Therefore, by increasing the density of the pitch between electrodes and using an exposure machine, alignment for electrode irradiation can be easily performed.

(実施例) 以下、本発明の実施例について図面を参照しながら詳細
に説明する。
(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

第1図は本発明の実施例を示す半導体素子の実装工程断
面図である。
FIG. 1 is a sectional view of a semiconductor element mounting process showing an embodiment of the present invention.

まず、第1図(a)に示すように、半導体素子IIには
電極12が形成され、それらの表面にスピンナ一方式、
又はスプレ一方式、デイツプ方式などで、有機電子写真
用感光体13を塗布する。
First, as shown in FIG. 1(a), electrodes 12 are formed on the semiconductor element II, and a spinner type,
Alternatively, the organic electrophotographic photoreceptor 13 is applied by a spray method, dip method, or the like.

その後、加熱乾燥させ、半導体素子11の表面に感光l
lA13’を形成し、例えばコロナ放電により、第1図
(b)に示すように、感光膜13′の表面を−にチャー
ジする。
Thereafter, the surface of the semiconductor element 11 is exposed to light by heating and drying.
1A 13' is formed, and the surface of the photoresist film 13' is charged to - by, for example, corona discharge, as shown in FIG. 1(b).

次に、第1図(c)に示すように、露光機により、目的
の電極12にのみ光を照射し、その部分の感光1111
3’の表面を中和状態にする。
Next, as shown in FIG. 1(c), only the target electrode 12 is irradiated with light by an exposure machine, and that part is exposed to light 1111.
The 3' surface is brought into a neutralized state.

次に、第1図(d)に示すように、金属核入りトナー(
導電粒子)14を−にチャージし、そのトナー14を感
光膜13’に接触させる。
Next, as shown in FIG. 1(d), toner containing metal nuclei (
The conductive particles 14 are charged to - and the toner 14 is brought into contact with the photoresist film 13'.

すると、第1図(e)に示すように、−にチャージされ
た感光膜面と、−にチャージされたトナー同志は反発し
あうが、中和されたt極13に対応する感光膜面には−
にチャージされたトナーが付着する。
Then, as shown in FIG. 1(e), the negative charged photoresist film surface and the negative charged toner repel each other, but the photoresist film surface corresponding to the neutralized t-pole 13 Ha-
The charged toner will stick to the surface.

このようにして、半導体素子の電極に導電粒子14を付
着させることができる。
In this way, the conductive particles 14 can be attached to the electrodes of the semiconductor element.

次に、このようにして得られた半導体素子を基板へ実装
する。つまり、COGでの半導体素子の実装工程につい
て説明する。
Next, the semiconductor element thus obtained is mounted on a substrate. That is, the mounting process of semiconductor elements using COG will be explained.

第1図(f)に示すように、液晶部20を搭載する導体
22が形成されるガラス基板21(例えば、液晶パネル
)を用意する。
As shown in FIG. 1(f), a glass substrate 21 (for example, a liquid crystal panel) on which a conductor 22 for mounting a liquid crystal section 20 is formed is prepared.

次に、第1図(g)に示すように、半導体素子を固定す
るための接着剤23をディスペンス方式などで塗布する
Next, as shown in FIG. 1(g), an adhesive 23 for fixing the semiconductor element is applied by a dispensing method or the like.

次に、第1図(h)に示すように、電極26に金属核入
りトナー(導電粒子H4を付着した半導体素子11とガ
ラス基板21の電極26の位置合わせを行う。
Next, as shown in FIG. 1(h), the semiconductor element 11 to which the metal core-containing toner (conductive particles H4 is attached) and the electrode 26 of the glass substrate 21 are aligned.

次に、第1図(i)に示すように、導電粒子14を介し
て、電極間同志を接触した後、圧力を加えて導電粒子1
4の金属核14’で、感光膜13′を破壊し、半導体素
子電極12とガラス基板21の電極26間を導通させる
。その後、接着剤23を固めて半導体素子を実装する。
Next, as shown in FIG. 1(i), after bringing the electrodes into contact via the conductive particles 14, pressure is applied to the conductive particles 14.
The photoresist film 13' is destroyed by the metal core 14' of No. 4, and conduction is established between the semiconductor element electrode 12 and the electrode 26 of the glass substrate 21. After that, the adhesive 23 is hardened and the semiconductor element is mounted.

次に、第1図(j)に示すように、半導体素子11の保
護キャップ27の接続と外部電極取り出し基板28の接
続を行う。
Next, as shown in FIG. 1(j), the protective cap 27 of the semiconductor element 11 and the external electrode extraction board 28 are connected.

第3図は本発明の第2実施例を示す半導体素子の実装工
程断面図である。
FIG. 3 is a cross-sectional view of a semiconductor device mounting process showing a second embodiment of the present invention.

まず、第3図(a)に示すように、液晶部30を搭載し
た導体32が形成されるガラス基板31の電極33を有
する面には有機電子写真用感光体を塗布し、その感光体
を加熱乾燥させ、感光膜34′を形成し、例えばコロナ
放電により、感光膜34′の表面を−にチャージする。
First, as shown in FIG. 3(a), an organic electrophotographic photoreceptor is coated on the surface of the glass substrate 31 on which the conductor 32 carrying the liquid crystal section 30 is formed, and the surface having the electrode 33 is coated with the photoreceptor. A photoresist film 34' is formed by heating and drying, and the surface of the photoresist film 34' is charged negative by, for example, corona discharge.

そこで、露光機により、目的の電極33にのみ光を照射
し、その部分の感光膜34′の表面を中和状態し、そこ
に、金属核入りトナー(導電粒子)を−にチャージし、
そのトナーを感光膜34′に接触させる。すると、中和
された電極33に対応する感光膜面には−にチャージさ
れたトナー35が付着する。
Therefore, an exposure machine is used to irradiate light only to the target electrode 33 to neutralize the surface of the photoresist film 34' in that area, and toner containing metal nuclei (conductive particles) is charged thereto.
The toner is brought into contact with the photoresist film 34'. Then, the negatively charged toner 35 adheres to the surface of the photoresist film corresponding to the neutralized electrode 33.

このようにして、ガラス基板の電極に導電粒子を付着さ
せることができる。
In this way, conductive particles can be attached to the electrodes of the glass substrate.

次に、このようにして得られたガラス基板の電極に半導
体素子を実装する。
Next, a semiconductor element is mounted on the electrode of the glass substrate thus obtained.

まず、第3[M(b)に示すように、ガラス基板の電極
間に接着剤36をディスペンス方式などで塗布する。
First, as shown in 3rd M(b), adhesive 36 is applied between the electrodes of the glass substrate using a dispensing method or the like.

次に、第3図(c)に示すように、ガラスJi、板31
の電極33に半導体素子11の電極12を位置合わせを
行う。
Next, as shown in FIG. 3(c), the glass Ji, the plate 31
The electrode 12 of the semiconductor element 11 is aligned with the electrode 33 of the semiconductor element 11 .

次に、第3図(d)に示すように、導電粒子を有するト
ナー35を介して、電極間同志を接触した後、圧力を加
えて金属核で、感光膜34′を破壊し、半導体素子の電
極12とガラス基板31の電極33間を導通させる。そ
の後、接着剤36を固めて半導体素子を実装する。
Next, as shown in FIG. 3(d), after bringing the electrodes into contact with each other through the toner 35 having conductive particles, pressure is applied to destroy the photoresist film 34' with a metal core, and the semiconductor element is The electrode 12 of the glass substrate 31 is electrically connected to the electrode 33 of the glass substrate 31. Thereafter, the adhesive 36 is hardened and the semiconductor element is mounted.

次に、第3図(e)に示すように、半導体素子11の保
護キャップ37の接続と外部電極取り出し基板38の接
続を行う。
Next, as shown in FIG. 3(e), the protective cap 37 of the semiconductor element 11 and the external electrode extraction board 38 are connected.

前記実施例の中では、半導体素子の実装基板として、ガ
ラス基板を例としたが、ガラス基板にこだわることなく
、一般の有機系、無機系基板であってもかまわない、ま
た、導電粒子を補給するのに−にチャージした金属核入
りトナーを使用しているが、金属核そのものを−にチャ
ージしたものを使用してもかまわない。
In the above embodiments, a glass substrate was used as an example of a mounting substrate for a semiconductor element, but it is not limited to a glass substrate, and a general organic or inorganic substrate may be used. Although a toner containing a metal core charged to - is used for this purpose, it is also possible to use a toner with the metal core itself charged to -.

更に、感光体は一チャージするタイプのものを示したが
、十にチャージするもの、又は中和状態で光照射により
+または−にチャージするものであってもかまわない、
その時は導電粒子側を使用目的にあった状態に処理すれ
ばよい。
Further, although the photoreceptor is shown as one that is charged once, it may be one that is charged ten times, or one that is charged positively or negatively by light irradiation in a neutralized state.
In that case, the conductive particles may be treated to a state suitable for the purpose of use.

なお、本発明は上記実施例に限定されるものではなく、
本発明の趣旨に基づき種々の変形が可能であり、それら
を本発明の範囲から排除するものではない。
Note that the present invention is not limited to the above embodiments,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.

(発明の効果) 以上、詳細に説明したように、本発明によれば、光感光
性膜の特性を使い、導電粒子を電極に付着させるように
するため、電極間ピッチの高密度化と、露光機を使うこ
とにより、電極照射のための位置合わせを容易に行うこ
とができる。
(Effects of the Invention) As described above in detail, according to the present invention, in order to make conductive particles adhere to the electrodes by using the characteristics of the photosensitive film, the pitch between the electrodes is increased in density, By using an exposure machine, alignment for electrode irradiation can be easily performed.

更に、導電粒子を電極に付着する方法を使っているため
、フリップチップ実装、TAB実装等のバンプ形成方法
にも適用可能である。
Furthermore, since a method of attaching conductive particles to electrodes is used, it is also applicable to bump forming methods such as flip-chip mounting and TAB mounting.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例を示す半導体素子の実装工程断
面図、第2図は従来のCOGでの半導体素子の実装工程
断面図、第3図は本発明の他の実施例を示す半導体素子
の実装工程断面図である。 11・・・半導体素子、12.26.33・・・を橿、
13・・・有機電子写真用感光体、13’ 、 34’
・・・感光膜、14.35・・・導電粒子(金属核入り
トナー)、14’・・・金属核、20、30・・・液晶
部、21.31・・・ガラス基板、22.32・・・導
体、23.36・・・接着剤、27.37・・・保護キ
ャップ、28、38・・・外部電掻取り出し基板。 特許出願人 沖電気工業株式会社 代理人 弁理士 清 水  守(外2名)第1図は/l
/) At茫旧肋f−1峠勺叡壬のに腋工宇艷d斤10図第1
図(ぞ02ン 第2図
FIG. 1 is a sectional view of a mounting process of a semiconductor element showing an embodiment of the present invention, FIG. 2 is a sectional view of a mounting process of a semiconductor element in a conventional COG, and FIG. 3 is a sectional view of a semiconductor element mounting process of a conventional COG. FIG. 3 is a cross-sectional view of the element mounting process. 11...Semiconductor element, 12.26.33...
13... Organic electrophotographic photoreceptor, 13', 34'
... Photoresist film, 14.35 ... Conductive particles (toner containing metal core), 14' ... Metal core, 20, 30 ... Liquid crystal section, 21.31 ... Glass substrate, 22.32 ... Conductor, 23.36 ... Adhesive, 27.37 ... Protective cap, 28, 38 ... External electric scraping board. Patent applicant: Oki Electric Industry Co., Ltd. Agent: Patent attorney: Mamoru Shimizu (2 others) Figure 1 is /l
/) At 茫 former rib f-1 pass 勺 审 の に Gant Gurd G G G 10 fig. 1
Figure (zo02n Figure 2

Claims (3)

【特許請求の範囲】[Claims] (1) (a)半導体素子の電極に光感光性膜の特性を使い、導
電粒子を該電極のみに付着し、 (b)該導電粒子が付着した半導体素子の電極を半導体
素子実装基板の電極に接続することを特徴とする半導体
素子の実装方法。
(1) (a) Using the characteristics of a photosensitive film for the electrode of a semiconductor element, conductive particles are attached only to the electrode, (b) The electrode of the semiconductor element to which the conductive particles are attached is connected to the electrode of the semiconductor element mounting board. A method for mounting a semiconductor element, the method comprising: connecting a semiconductor element to a semiconductor element;
(2) (a)半導体素子実装基板の電極に光感光性膜の特性を
使い、導電粒子を該電極のみに付着し、(b)該導電粒
子が付着した半導体素子実装基板の電極に半導体素子の
電極を接続することを特徴とする半導体素子の実装方法
(2) (a) Using the characteristics of a photosensitive film on the electrode of the semiconductor element mounting board, conductive particles are attached only to the electrode, and (b) The semiconductor element is attached to the electrode of the semiconductor element mounting board to which the conductive particles are attached. A method for mounting a semiconductor device, the method comprising: connecting electrodes.
(3)請求項1又は2記載の導電粒子の金属核で光感光
膜を破壊し、電極を導通させることを特徴とする半導体
素子の実装方法。
(3) A method for mounting a semiconductor device, which comprises destroying a photosensitive film with the metal core of the conductive particles according to claim 1 or 2, thereby making the electrode conductive.
JP2221376A 1990-08-24 1990-08-24 Packaging method of semiconductor element Pending JPH04105337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2221376A JPH04105337A (en) 1990-08-24 1990-08-24 Packaging method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2221376A JPH04105337A (en) 1990-08-24 1990-08-24 Packaging method of semiconductor element

Publications (1)

Publication Number Publication Date
JPH04105337A true JPH04105337A (en) 1992-04-07

Family

ID=16765824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2221376A Pending JPH04105337A (en) 1990-08-24 1990-08-24 Packaging method of semiconductor element

Country Status (1)

Country Link
JP (1) JPH04105337A (en)

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