JPH0399425A - Liquid phase epitaxial growth system - Google Patents
Liquid phase epitaxial growth systemInfo
- Publication number
- JPH0399425A JPH0399425A JP23625289A JP23625289A JPH0399425A JP H0399425 A JPH0399425 A JP H0399425A JP 23625289 A JP23625289 A JP 23625289A JP 23625289 A JP23625289 A JP 23625289A JP H0399425 A JPH0399425 A JP H0399425A
- Authority
- JP
- Japan
- Prior art keywords
- fused solution
- epitaxial growth
- melt
- retainer part
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007791 liquid phase Substances 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000155 melt Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、高純度カーボンを用いた液相エピタキシャル
成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a liquid phase epitaxial growth apparatus using high purity carbon.
（ロ）従来の技術
従来より、ＧａＰ、ＧａＡｓ、ＧａＡｌＡｓなどのＩＩ
Ｉ −Ｖ族化合物半導体においては、特開昭６０−２５
０６２０号公報、特開昭６０−２０８８２５号公報など
に示されるように、半導体基板を収納する四部を有する
基板保持部と、その基板保持部に摺動自在に積層され融
液溜を有した融液保持部とを利用して、スライド式の液
相エピタキシャル成長を行ってきた。そしてこのような
液相エピタキシャル成長装置は高純度カーボンを利用し
て成形していた。(b) Conventional technology Conventionally, II such as GaP, GaAs, GaAlAs, etc.
Regarding I-V group compound semiconductors, JP-A-60-25
As shown in Japanese Patent Application Laid-open No. 0620 and Japanese Patent Application Laid-Open No. 60-208825, there is a substrate holder having four parts for storing a semiconductor substrate, and a melt having a melt reservoir slidably laminated on the substrate holder. Slide-type liquid phase epitaxial growth has been performed using a liquid holding section. Such liquid phase epitaxial growth equipment has been molded using high-purity carbon.
（ハ）発明が解決しようとする課題
ところがこのような高純度カーボン成形品は、粉末を圧
縮成形して製造されたものであるから、昇温、摺動、長
時間の高温保持などによりカーボン粉末が発生し、エピ
タキシャル成長溶液である融液中に溶は込み、エピタキ
シャル成長層の不純物濃度に影響を与える。又、エピタ
キシャル成長中の過剰な溶融物（例えばＧａＡｌＡｓエ
ピタキシャル成長などではＧａＡｓである場合が多い）
などが析出してくるが、カーボンは融液に対して親和性
がなく疎である為、その析出物は専ら半導体基板に付着
し、液相エピタキシャル成長に悪影響を及ぼした。(c) Problems to be Solved by the Invention However, since such high-purity carbon molded products are manufactured by compression molding powder, the carbon powder is degraded by heating, sliding, and long-term high-temperature holding. is generated and dissolved into the melt, which is the epitaxial growth solution, and affects the impurity concentration of the epitaxial growth layer. Also, excessive melt during epitaxial growth (for example, in GaAlAs epitaxial growth, it is often GaAs)
However, since carbon has no affinity for the melt and is sparse, the precipitates adhere exclusively to the semiconductor substrate, adversely affecting liquid phase epitaxial growth.
（ニ）課題を解決するための手段
本発明は上述の点を考慮して成されたもので、上述した
液相エピタキシャル成長装置の融液溜の内壁にＳｉＣ層
を設けたものである。(d) Means for Solving the Problems The present invention has been made in consideration of the above-mentioned points, and includes providing an SiC layer on the inner wall of the melt reservoir of the above-mentioned liquid phase epitaxial growth apparatus.
（ホ）作用
高純度カーボンに設けたＳｉＣ層は結晶粒子集合体のよ
うに微細な凹凸をもち、しかも融液に対して親和性を持
つので、他の部分から発生したカーボン粒子や融液から
の析出物をその内壁に付着させる。(E) Function The SiC layer provided on high-purity carbon has fine irregularities like an aggregate of crystal grains, and has an affinity for the melt, so it is free from carbon particles generated from other parts and the melt. deposits on its inner walls.
（へ）実施例
図は本発明の実施例を示す液相エピタキシャル成長装置
の断面図で、（１）は半導体基板（２）を収納する四部
（１１）を有する基板保持部である。また（３）は、そ
の基板保持部（１）に摺動自在に積層された融液保持部
で、凹部または透孔を設けることによって少なくとも１
つの融液溜（３１）を有し、融液溜（３１）には融液（
４）が収納されている。そしてこれらの基板保持部（１
）と融液保持部（３）は、例えば不純物が５ｐｐｍ以下
の高純度カーボンからなっているが、融液溜（３１）７
）内壁（３２）４ｍは、ＣＶＤ法などを利用してＳｉＣ
層が設けられている。(v) Embodiment The figure is a sectional view of a liquid phase epitaxial growth apparatus showing an embodiment of the present invention, in which (1) is a substrate holder having four parts (11) for storing a semiconductor substrate (2). Further, (3) is a melt holding part that is slidably laminated on the substrate holding part (1), and is provided with a recess or a through hole so that at least one
The melt reservoir (31) has two melt reservoirs (31).
4) is stored. And these substrate holding parts (1
) and the melt holding part (3) are made of high-purity carbon with impurities of 5 ppm or less, for example, but the melt reservoir (31) 7
) The inner wall (32) 4m is made of SiC using CVD method etc.
There are layers.
このような構成において、ＧａＡｓの半導体基板（２）
に、ＡＪ！Ａｓの混晶比０．６−０．７のＧａＡＪ！Ａ
ｓ層を成長させる時のエピタキシャル工程を説明する。In such a configuration, a GaAs semiconductor substrate (2)
Ni, AJ! GaAJ with As mixed crystal ratio 0.6-0.7! A
The epitaxial process when growing the s-layer will be explained.
まず融液（４）は、Ｇａ１００ｇにＧａＡｓを６ｇ、Ａ
Ｐ！６００ｍｇ、Ｚｎ６００ｍｇの割合で混入し、準備
する。そして半導体基板（２）と融液（４）を分離した
状態で８６０〜９５０℃の所定の温度で約１時間保持す
る。その後融液保持部（３）を摺動させて半導体基板（
２）と融液（４）とを接触させ、必要と有ればメルトバ
ックして、０．８℃／ｍｉｎの所定の温度勾配で徐冷す
ることによりエピタキシャル成長させ、６００〜７００
℃の所定の温度に達したところで成長を止める。First, the melt (4) consists of 100 g of Ga, 6 g of GaAs, and A
P! Prepare by mixing 600 mg of Zn and 600 mg of Zn. Then, the semiconductor substrate (2) and the melt (4) are kept separated at a predetermined temperature of 860 to 950° C. for about 1 hour. After that, the melt holding part (3) is slid and the semiconductor substrate (
2) and the melt (4), melted back if necessary, and slowly cooled at a predetermined temperature gradient of 0.8°C/min for epitaxial growth.
Growth is stopped when a predetermined temperature of °C is reached.
このようにして形成された成長層は、ウェハの欠陥が減
少し、不純物濃度が２〜５Ｘ１０−”ｃｍ−”と、従来
より約１桁所望の値に近づき、これを用いた発光ダイオ
ードはウェハ当りの歩留まりが従来より５〜２５％向上
した。又、内壁（３２）のＳｉＣ層には析出不純物の付
着が多く認められ、凹部（１１）の内部の粒子等は従来
より遥かに少量、観察された。The growth layer formed in this way has fewer defects on the wafer and has an impurity concentration of 2 to 5X10 cm, which is about an order of magnitude closer to the desired value than conventional ones. The yield per unit was improved by 5 to 25% compared to the conventional method. Further, a large amount of precipitated impurities was observed on the SiC layer of the inner wall (32), and a much smaller amount of particles and the like inside the recess (11) was observed than before.
このように粗面状のＳｉＣ層はＩＩＩ −Ｖ族エピタキ
シャル融液（４）に対する親和性がよいので、成長装置
全面を処理すればより効果があると推測されるが、摺動
抵抗が大きく、基板保持部（１）と融液保持部（３）の
接触面のみならず、半導体基板（２）表面にも傷が付く
ので好ましくない。Since the SiC layer with a rough surface has a good affinity for the III-V group epitaxial melt (4) as described above, it is assumed that it would be more effective if the entire surface of the growth device was treated, but the sliding resistance is large and This is not preferable because it damages not only the contact surface between the substrate holder (1) and the melt holder (3) but also the surface of the semiconductor substrate (2).
従ってＳｉＣ処理は融液（４）との接触面に施すのが最
も効果があり、融液（４）に錘（５）を用いる場合には
、その錘（５）の底面にもＳｉＣ層を設けるのが好まし
い。Therefore, it is most effective to apply SiC treatment to the surface in contact with the melt (4), and when a weight (5) is used for the melt (4), the bottom surface of the weight (5) is also coated with a SiC layer. It is preferable to provide one.
（ト）発明の効果
以上の如くにより、融液のエピタキシャル中の析出物を
内壁に付着させ、またカーボン粉末のエピタキシャル成
長面への影響を少なくすることができるので、エピタキ
シャル層の不純物濃度の制御が容易になると共に歩留ま
りも向上する。(g) Effects of the invention As described above, it is possible to make the precipitates in the epitaxial layer of the melt adhere to the inner wall, and to reduce the influence of the carbon powder on the epitaxial growth surface, making it possible to control the impurity concentration in the epitaxial layer. It becomes easier and the yield also improves.
図は本発明実施例の液相エピタキシャル成長装置の断面
図である。
（１）・・・・基板保持部、（２）・・・・半導体基板
、（３）・・・・融液保持部、（３１）・・・・内壁。The figure is a sectional view of a liquid phase epitaxial growth apparatus according to an embodiment of the present invention. (1)...Substrate holding part, (2)...Semiconductor substrate, (3)...Melt holding part, (31)...Inner wall.
Claims (1)
、その基板保持部に摺動自在に積層され融液溜を有した
融液保持部とを有したカーボンからなる液相エピタキシ
ャル成長装置において、前記融液溜の内壁にＳｉＣ層を
設けたことを特徴とする液相エピタキシャル成長装置。(1) In a liquid phase epitaxial growth apparatus made of carbon, which has a substrate holding part having a recessed part for storing a semiconductor substrate, and a melt holding part slidably stacked on the substrate holding part and having a melt reservoir, A liquid phase epitaxial growth apparatus characterized in that a SiC layer is provided on the inner wall of the melt reservoir.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23625289A JPH0399425A (en) | 1989-09-12 | 1989-09-12 | Liquid phase epitaxial growth system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23625289A JPH0399425A (en) | 1989-09-12 | 1989-09-12 | Liquid phase epitaxial growth system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0399425A true JPH0399425A (en) | 1991-04-24 |
Family
ID=16998031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23625289A Pending JPH0399425A (en) | 1989-09-12 | 1989-09-12 | Liquid phase epitaxial growth system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0399425A (en) |
-
1989
- 1989-09-12 JP JP23625289A patent/JPH0399425A/en active Pending
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