JPH0392774U - - Google Patents

Info

Publication number
JPH0392774U
JPH0392774U JP15297689U JP15297689U JPH0392774U JP H0392774 U JPH0392774 U JP H0392774U JP 15297689 U JP15297689 U JP 15297689U JP 15297689 U JP15297689 U JP 15297689U JP H0392774 U JPH0392774 U JP H0392774U
Authority
JP
Japan
Prior art keywords
crucible
single crystal
partition wall
pulling
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15297689U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15297689U priority Critical patent/JPH0392774U/ja
Publication of JPH0392774U publication Critical patent/JPH0392774U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15297689U 1989-12-28 1989-12-28 Pending JPH0392774U (US20090163788A1-20090625-C00002.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15297689U JPH0392774U (US20090163788A1-20090625-C00002.png) 1989-12-28 1989-12-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15297689U JPH0392774U (US20090163788A1-20090625-C00002.png) 1989-12-28 1989-12-28

Publications (1)

Publication Number Publication Date
JPH0392774U true JPH0392774U (US20090163788A1-20090625-C00002.png) 1991-09-20

Family

ID=31699209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15297689U Pending JPH0392774U (US20090163788A1-20090625-C00002.png) 1989-12-28 1989-12-28

Country Status (1)

Country Link
JP (1) JPH0392774U (US20090163788A1-20090625-C00002.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014513034A (ja) * 2011-05-06 2014-05-29 ジーティー アドヴァンスト シーズィー, エルエルシー 最初のチャージだけをドーピングすることによる、均一にドーピングされたシリコンインゴットの成長

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014513034A (ja) * 2011-05-06 2014-05-29 ジーティー アドヴァンスト シーズィー, エルエルシー 最初のチャージだけをドーピングすることによる、均一にドーピングされたシリコンインゴットの成長
US10544517B2 (en) 2011-05-06 2020-01-28 Gtat Ip Holding Llc. Growth of a uniformly doped silicon ingot by doping only the initial charge

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