JPH038384A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH038384A JPH038384A JP14218889A JP14218889A JPH038384A JP H038384 A JPH038384 A JP H038384A JP 14218889 A JP14218889 A JP 14218889A JP 14218889 A JP14218889 A JP 14218889A JP H038384 A JPH038384 A JP H038384A
- Authority
- JP
- Japan
- Prior art keywords
- output
- semiconductor laser
- current
- light
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000010276 construction Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、情報処理や光計測器、光通信装置等の光源と
して用いる半導体レーザ装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor laser device used as a light source for information processing, optical measuring instruments, optical communication devices, and the like.
（従来の技術）
一般に、半導体レーザ装置には受光素子が組込まれて、
半導体レーザ素子の後面の反射端面から放射されるレー
ザ光を受光検出し、その検出出力によって出力レーザ光
を一定に制御する。いわゆるＡＰＣ機能の駆動が可能に
なされている。(Prior art) Generally, a semiconductor laser device has a built-in light receiving element.
The laser beam emitted from the reflective end face of the rear surface of the semiconductor laser element is received and detected, and the output laser beam is controlled to be constant based on the detected output. It is possible to drive a so-called APC function.
第３図は、そのような受光素子を設けた従来の半導体レ
ーザ装置を示す図で、図（ａ）は要部構成の概略を示す
側面図で、受光素子としてフォトダイオード（ＰＤと記
す）１が単体で、半導体レーザ素子２の後面出力光を受
光するように、半導体レーザ素子２とともに固定台３に
固定されており、４は電極、５は前面出力レーザ光であ
る。FIG. 3 is a diagram showing a conventional semiconductor laser device equipped with such a light-receiving element, and FIG. is fixed to a fixing table 3 along with the semiconductor laser element 2 so as to receive the rear output light of the semiconductor laser element 2, 4 is an electrode, and 5 is a front output laser beam.
同図（ｂ）は図（ａ）の電気回路の概略を示し、ＰＤｌ
に電源ｖ０が印加された後面の出力光５′を受光すると
、電ｇ電流工。と等しい出力電流ＩＰＤが流れる。Figure (b) shows the outline of the electric circuit in Figure (a), and the PDl
When the output light 5' from the rear surface to which the power supply v0 is applied is received, the electric current is applied. An output current IPD equal to flows.
（発明が解決しようとする課題）
半導体レーザ装置では、上述のように一般にＡＰＣのた
めに自己のレーザ光を検出する受光素子を有するが、高
出力半導体レーザ装置を構成する場合、前面のレーザ光
出射出力を大きくするために後面の出力が小さくなされ
、そのため受光素子としてのＰＤの出力電流（ＩＦＤ）
が小さくなり、前面の出力光を一定に自動制御する場合
に出力が不足する欠点がある。(Problem to be Solved by the Invention) As mentioned above, a semiconductor laser device generally has a light receiving element that detects its own laser beam for APC. In order to increase the output output, the output of the rear surface is made small, so the output current (IFD) of the PD as a light receiving element is reduced.
This results in a disadvantage that the output is insufficient when automatically controlling the front output light to a constant value.
本発明は上記の欠点を排除する高出力の半導体レーザ装
置の提供を目的とする。An object of the present invention is to provide a high-output semiconductor laser device that eliminates the above-mentioned drawbacks.
（課題を解決するための手段）
本発明は上記の目的を、半導体レーザ素子後面の出力光
の検出出力を用いて、前面の出力光を一定に制御する構
造の半導体レーザ装置において、後面の出力光の検出出
力電流を増幅する回路を設けた光検出部出力によって、
前面の出力光を制御する構成にして達成する。(Means for Solving the Problems) The present invention achieves the above-mentioned object by providing a semiconductor laser device having a structure in which output light from the front side is controlled to a constant level using detected output of output light from the rear side of the semiconductor laser element. The output of the photodetector is equipped with a circuit that amplifies the light detection output current.
This is achieved by using a configuration that controls the output light from the front.
（作 用）
本発明によれば、受光検出部の増幅により出力自動制御
ＡＰＣのために十分な、レーザ光の出力電流が得られ、
しかもその他の構成は従来例と同様で変化がないから、
高出力の半導体レーザ装置の形成が容易に可能になる。(Function) According to the present invention, sufficient laser light output current for automatic output control APC can be obtained by amplification of the light receiving detection section,
Moreover, since the other configurations are the same as the conventional example, there are no changes.
It becomes possible to easily form a high-output semiconductor laser device.
（実施例）
第１図は本発明の一実施例の半導体レーザ装置要部の受
光検出部の回路図である。(Embodiment) FIG. 1 is a circuit diagram of a light receiving and detecting section of a main part of a semiconductor laser device according to an embodiment of the present invention.
６はフォトダイオード（ＰＤと記す）、７はトランジス
タ（Ｔｒと記す）、Ｖｉ＋ｅはＴｒ７のベース・エミッ
タ間電圧であり、ＰＤ６に電源電圧ｖｃｖｎＥが印加さ
れる。このときＰＤ６には後面の出力光５′により出力
電流Ｉ、。が流れる。この電流はＴｒ７のベース電流工
。どなるため、その増幅率β倍の電流がコレクタ電流■
。どなる。6 is a photodiode (denoted as PD), 7 is a transistor (denoted as Tr), Vi+e is a base-emitter voltage of Tr7, and a power supply voltage vcvnE is applied to PD6. At this time, the PD 6 receives an output current I due to the output light 5' from the rear surface. flows. This current is the base current of Tr7. Because of this, the current with the amplification factor β is the collector current ■
. bawl.
したがって、この受光検出部全体の出力電流Ｉｏは（１
＋β）ＩＰＤとなり、従来のフォトダイオード単体の場
合の（１＋β）倍の出力電流が得られることになり、Ａ
ＰＣを駆動するに十分な電流となる。Therefore, the output current Io of the entire light receiving and detecting section is (1
+β) IPD, and the output current is (1+β) times that of the conventional photodiode alone, and A
The current is sufficient to drive a PC.
第２図は第１図における入力光強度（横軸、ｍｗ）と出
力電流（１０）との関係を示す図で、増幅率βが２の場
合の一例で、ａが本発明、ｂは従来例の場合である。こ
の図で明らかなように、受光検出部は従来の単独のＰＤ
に比べ、（１＋β）倍の出力電流が直線性よく得られる
。FIG. 2 is a diagram showing the relationship between the input light intensity (horizontal axis, mw) and the output current (10) in FIG. This is the case for example. As is clear from this figure, the light receiving and detecting section is a conventional independent PD.
Compared to this, an output current (1+β) times as large can be obtained with good linearity.
すなわち、上記のような受光検出部を半導体レーザの光
検出素子とする半導体レーザ装置である。That is, this is a semiconductor laser device in which the above-mentioned light receiving and detecting section is used as a photodetecting element of the semiconductor laser.
（発明の効果）
以上、説明して明らかなように本発明は、ＡＰＣのため
の出力の検出を、ＰＤ出力を増幅する受光検出部によっ
て行なうから、半導体レーザ素子の前面出力を高出力と
して後面出力が小さい場合でも、出力を一定にするＡＰ
Ｃを駆動でき、しかも、はぼ従来構造のまま構成可能な
半導体レーザ装置であるから、光源に高出力レーザ光が
要求される装置の構成に用いて大きな効果が得られる。(Effects of the Invention) As is clear from the above description, the present invention detects the output for APC using the light receiving detection unit that amplifies the PD output, so the front output of the semiconductor laser element is set as high output and the rear output is AP that keeps the output constant even when the output is small
Since the semiconductor laser device is capable of driving C and can be constructed using a substantially conventional structure, it can be used to great effect in the construction of devices that require high-output laser light as a light source.
第１図は本発明の一実施例を説明する要部回路図、第２
図は本発明に用いる受光検出部の出力電流を示す図、第
３図は従来の半導体レーザ装置における受光素子を説明
する図である。
１．６・・・フォトダイオード（ＰＤ）、２・・・半導
体レーザ素子、 ３・・・固定台、 ４・・・電極、
５・・・（前面）出力光、 ５′・・・（後面）
出力光、 ７・・・トランジスタ（Ｔｒ）。
第１図
エカ電ＪＩＯ＝ （１＋ｒ３） Ｉｐ。FIG. 1 is a main circuit diagram explaining one embodiment of the present invention, and FIG.
This figure is a diagram showing the output current of the light receiving detection section used in the present invention, and FIG. 3 is a diagram explaining a light receiving element in a conventional semiconductor laser device. 1.6... Photodiode (PD), 2... Semiconductor laser element, 3... Fixing base, 4... Electrode,
5... (front) output light, 5'... (rear)
Output light, 7...Transistor (Tr). Figure 1 Ekaden JIO= (1+r3) Ip.
Claims (1)
面の出力光を一定に制御する構造の半導体レーザ装置に
おいて、後面の出力光の検出出力電流を増幅する回路を
設けた光検出部出力によって、前面の出力光を制御する
構成にしたことを特徴とする半導体レーザ装置。In a semiconductor laser device that uses the detected output of the output light from the rear side of the semiconductor laser element to control the output light from the front side to a constant level, the output of the photodetector section is equipped with a circuit that amplifies the detected output current of the output light from the rear side. , a semiconductor laser device characterized in that it is configured to control output light from the front side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14218889A JPH038384A (en) | 1989-06-06 | 1989-06-06 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14218889A JPH038384A (en) | 1989-06-06 | 1989-06-06 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH038384A true JPH038384A (en) | 1991-01-16 |
Family
ID=15309434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14218889A Pending JPH038384A (en) | 1989-06-06 | 1989-06-06 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH038384A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9328224B2 (en) | 2013-09-17 | 2016-05-03 | Nike, Inc. | Dynamically crosslinked thermoplastic material process |
| US9481792B2 (en) | 2013-09-17 | 2016-11-01 | Nike, Inc. | Dynamically crosslinked thermoplastic material process |
| JP2020107595A (en) * | 2018-12-26 | 2020-07-09 | エクセレンス オプトエレクトロニクス インコーポレイテッド | Vehicular led linear illuminating module |
| US11769984B2 (en) | 2021-07-30 | 2023-09-26 | Panasonic Holdings Corporation | Laser module, laser oscillator and laser processing system |
-
1989
- 1989-06-06 JP JP14218889A patent/JPH038384A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9328224B2 (en) | 2013-09-17 | 2016-05-03 | Nike, Inc. | Dynamically crosslinked thermoplastic material process |
| US9481792B2 (en) | 2013-09-17 | 2016-11-01 | Nike, Inc. | Dynamically crosslinked thermoplastic material process |
| US9598579B2 (en) | 2013-09-17 | 2017-03-21 | Nike, Inc. | Dynamically crosslinked thermoplastic material process |
| JP2020107595A (en) * | 2018-12-26 | 2020-07-09 | エクセレンス オプトエレクトロニクス インコーポレイテッド | Vehicular led linear illuminating module |
| US11769984B2 (en) | 2021-07-30 | 2023-09-26 | Panasonic Holdings Corporation | Laser module, laser oscillator and laser processing system |
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