JPH0379761A - Ion beam sputtering device and neutralizer - Google Patents

Abstract

PURPOSE:To prevent the lowering of a sputtering rate by radiating electrons from an electron supplying source provided off the orbit of an ion beam and imparting the momentum directing toward a desired direction to the electrons by a directivity imparting means. CONSTITUTION:A target 6 is irradiated with the ion beam 5 radiated from an ion generator 1 and a film is formed on a substrate 8 by sputtering particles 7 released from the target 6. A filament 9a is heated at this time to radiate thermions 12 and the momentum is imparted to the electrons 12 by the electric field formed by applying a negative potential to a conductor 11a by a decelerating power source 10 to accelerate the electrons 12 toward the ion beam 5 and the target 6. The electrons 12 are, therefore, splashed, are taken into the ion beam 5 and neutralized without generating an electron sleeve around the filament 9a. The target 6 is simultaneously neutralized, by which the lowering of the sputtering rate is prevented and the film forming rate is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion beam sputtering apparatus equipped with a neutralizer for neutralizing charges.

[Prior Art] In an ion beam sputtering apparatus, when an insulating target is irradiated with an ion beam having a charge, the charge of the ion beam is gradually accumulated, and the target has a potential. This causes a problem in that the amount of ion beam incident on the target decreases due to charge repulsion, and the sputtering rate decreases.

As a means of solving this problem, when sputtering an insulating target to form a film on a substrate, an ion beam sputtering device equipped with a neutralizer that emits electrons to neutralize the charge is known. ing.

In order to prevent the charge from increasing on the target, a neutralizer irradiates the ion beam with electrons, causes the ion beam to collide with the electrons, and neutralizes the charge on the ion beam. Neutralizes by irradiating it with electrons.

Examples of the electron supply source for the neutralizer include a thermionic emission device using a filament, an electron gun, and a secondary electron generation device using these.

Among these, devices that focus electrons or have strong electron directionality, such as electron guns.

When used as an electron supply source, since the electron beam is narrow, the contact area with the target or the ion beam is small, resulting in poor charge neutralization efficiency.

On the other hand, a thermionic emission device using a filament has no directivity and has the characteristic of emitting electrons over a wide range, the electron emission area can be made small, and the price is low. Often used.

In ion beam sputtering equipment, the neutralizer v
There are two ways to place the ion beam: inside the ion beam orbit or outside the ion beam orbit.

FIG. 4 shows an ion beam sputtering apparatus in which a filament is used as the electron supply source of the neutralizer and the neutralizer is provided within the ion beam orbit.

In FIG. 4, a positively charged ion beam (indicated by a solid line) 5 includes a filament 2 and an ion extraction electrode 3.
, 4 and acceleration power source 10. It is emitted from the ion generator 1 comprising a 'fA speed power source 13.

The filament 9 that generates electrons (shown by dashed lines) 12 is
It is installed within the orbit of the ion beam 5.

In this device, electrons 12 emitted from the filament 2 are captured by the ion beam 5, turning the positively charged ion beam 5 into a neutral beam. This neutral beam enters target 6, and target 6
Sputtered particles 7 are emitted from the sputtered particles 7. The sputtered particles 7 are
It advances toward the substrate 8 and forms a film on the substrate 8.

In this conventional device, the neutral beam is
Since the light is incident on the target 6, charging of the target 6 is prevented.

On the other hand, a method in which an electron supply source serving as a neutralizer is provided outside the ion beam orbit is disclosed in Japanese Patent Application Laid-Open No. 62-260327.
It is described and published in the No. 1 gazette, etc. This method neutralizes the charge on a positively charged target surface by directing electrons emitted from a neutralizer electron source toward the target.

[Problems to be Solved by the Invention] However, in the ion beam sputtering apparatus shown in FIG. 4 in which a neutralizer is provided in the ion beam trajectory, when a filament is used as an electron supply source for the neutralizer,
Ions are generated from the filament by sputtering the filament with the ion beam. These ions are then taken into the target and further into the substrate. As a result, the resulting substrate contains filament ions as impurities.

When forming a Ni film using this ion beam sputtering apparatus, for example, if neutralization is performed using a neutralizer using a filament made of Ta rays as an electron supply source,
Ta ions of the filament are contained as impurities in the Ni film at a weight ratio of about 1100 pp.

On the other hand, in an ion beam sputtering apparatus that uses a filament as an electron supply source outside the ion beam orbit, such as that disclosed in Japanese Patent Application Laid-open No. 62-260327, the substrate does not contain filament ions. do not have.

However, since the electrons generated from the filament do not have sufficient momentum, an electron sheath is generated around the filament. For this reason, sufficient electrons are not supplied to the target surface, the efficiency of charge neutralization on the target surface is poor, and a decrease in sputtering rate cannot be prevented.

By the way, to control the electrical, mechanical, optical, and crystallographic properties of the film formed on the substrate.

A method is known in which a substrate is irradiated with ions using an auxiliary ion generator (assisting ion source). However, in the ion beam sputtering apparatus employing this method, the charge on the substrate increases due to the irradiated ions, which may cause film destruction.

In order to prevent this film breakdown, supply electrons to the substrate,
What is necessary is to neutralize the charges on the substrate.

However, among the conventional techniques for irradiating the target with electrons, when a method in which a filament is provided as an electron supply source within the ion beam trajectory is used, impurities are mixed into the target. Moreover, since the electrons emitted from the filament do not reach the substrate, they cannot neutralize the charge on the substrate. On the other hand, among the conventional techniques that irradiate the target with electrons.

If a method is used in which a filament is provided as an electron supply source outside the ion beam orbit, electrons cannot be extracted from the electron sheath unless the potential on the substrate surface increases considerably, and the efficiency of charge neutralization is extremely poor.

Furthermore, even if a filament is provided in the trajectory of the ion beam irradiated by the sub-ion generator, the ions of the filament will not reach the substrate, similar to the above-mentioned method of providing a filament as an electron supply source in the trajectory of the ion beam. It is included as an impurity.

Therefore, a first object of the present invention is to provide an ion beam sputtering apparatus that does not contaminate the produced film and can efficiently prevent charging of the target, so that the sputtering rate does not decrease. .

A second object of the present invention is to provide an ion beam sputtering device that does not increase the charge on the substrate and can prevent film destruction even when a sub-ion generator is used to control the characteristics of the film formed on the substrate. There is a particular thing.

[Means for Solving the Problem] The object is to provide an ion beam sputtering device that irradiates a target with an ion beam emitted from an ion generator and forms a thin film on a substrate surface using sputtered particles emitted from the target. A neutralizer comprising an electron supply source that arranges a radiation portion outside the orbit of the ion beam, and directivity imparting means having a function of imparting momentum toward a desired direction to electrons emitted from the electron supply source. This is achieved by an ion beam sputtering apparatus characterized by the following.

The neutralizer includes an electron supply source disposed outside the orbit of the ion beam, a conductor near the electron supply source, and a power supply that applies a negative potential to the conductor, and the conductor , it may have a shape that forms an electric field that causes electrons emitted from the electron supply source to travel in a desired direction.

The direction in which the electrons are directed is preferably toward a space in which a target and/or an ion beam trajectory exists.

A neutralizer provided in an ion beam sputtering apparatus has a function of emitting electrons to an object whose charge is to be neutralized and forming an electric field that accelerates the electrons into a space that includes an electron emitting part and the object whose charge is to be neutralized. It may also have the following.

A second object of the present invention is to include an ion generator and a sub-ion generator, and to irradiate a target with an ion beam emitted from the ion generator.

By sputtered particles emitted from the target,
In an ion beam sputtering apparatus configured to form a thin film on a substrate and irradiate the thin film formed by the sputtered particles with ions emitted from the sub-ion generator, the electron emitting portion is aligned with the trajectory of the ion beam. An ion characterized by comprising a neutralizer having an electron supply source disposed outside and a directivity imparting means having a function of imparting momentum toward a desired direction to electrons emitted from the electron supply source. Achieved by beam sputtering equipment.

The neutralizer includes an electron supply source that disposes an electron emitting unit outside the orbit of the ion beam, a conductor near the electron supply source, and a power source that applies a negative potential to the conductor, and the conductor has a negative potential. It may have a shape that forms an electric field that causes electrons emitted from the electron supply source to travel in a desired direction by applying a potential.

It is preferable that the direction in which the electrons are directed is the trajectory of the target and/or the ion beam, and the direction toward the space where the substrate is present.

The electron supply source used in the present invention is not particularly limited, but may include a thermionic emission device using a filament, an electron gun, a secondary electron generation device using these, and the like.

A thermionic emission device using a filament is preferably used because it has the property of emitting electrons over a wide range without having directivity, can make the electron emission area small, and is inexpensive.

On the other hand, when an electron source with high directivity of emitted electrons is used, the ion beam to be neutralized is easily passed through, and the efficiency of neutralizing charges is low.

Furthermore, if an apparatus in which electrons are focused as an electron supply source or a device with strong electron directionality is used in ion beam sputtering using a plurality of targets or ion beams, it is necessary to provide a plurality of electron supply sources. But like filament,
If an electron supply source that can spread the emitted electrons is used, only one electron supply source is required. However, this does not negate the provision of two or more.

The directivity imparting means, which includes a conductor and a power source that applies a negative potential to the conductor, imparts directivity to the electrons emitted from the electron supply source.
It has the function of imparting momentum to move in the desired direction.

A conductor supplied with a potential from a power source generates an electric field, which imparts momentum to the electrons emitted by the electron source. The electric field strength between the conductor and the electron source is, for example, 3 V/m
A charge is applied so that the voltage becomes approximately m or more. When the electric field strength is less than this value, an electron sheath tends to occur around the electron source.

The conductor has a shape that can impart momentum to the electrons in the direction toward the ion beam trajectory and the space where the target exists, which is the object for charge neutralization. The material, shape, and size of the conductor are not particularly limited as long as they can supply electrons to the target to be neutralized, the ion beam trajectory, or the substrate. For example, the shape is
There are groove types, arcuate curved surfaces, etc.

It is preferable to use a deceleration power source of the ion generator as the power source for applying a negative potential to the conductor, since there is no need to prepare a new power source, and the device can be made smaller and cheaper.

The present invention is a sputtering method that has the function of controlling the electrical, mechanical, optical, and crystallographic properties of a film by irradiating the film formed on a substrate with ions from an auxiliary ion generator (assisting ion source). It can also be applied to equipment. In this case, the directivity imparting means.

The configuration is such that the substrate is also irradiated with electrons emitted from the electron supply source to neutralize the charge on the substrate.

Further, the ion beam sputtering apparatus used in the present invention can also be applied to a multi-source ion beam sputtering apparatus in which a plurality of combinations of targets and ion generators are used.

Furthermore, in the present invention, a neutralizer.

It may also be configured to be used as a means for changing the sputter rate. For example, to increase the sputtering rate, the electron output current from the electron source is made slightly higher than the ion beam current. The electron output current from the electron supply source is adjusted by the filament current and the bias potential applied to the directivity imparting means.

[Function] Since the ion beam sputtering apparatus of the present invention has an electron supply source provided outside the ion beam orbit, the ion beam does not sputter the filament even if a filament is used as the electron supply source. Therefore, ions generated from the filament are not taken into the target, and furthermore, they are not taken into the substrate. As a result, the resulting substrate does not contain filament ions as impurities.

Further, in one aspect of the present invention, the directivity imparting means imparts momentum to the electrons emitted from the electron supply source.

Specifically, a negative potential is applied between the conductor constituting the directivity imparting means and the electron supply source so that the electric field strength is about 1 V/mm or more, for example, about 3 V/mm. Electrons emitted from an electron source are accelerated by an electric field, giving them momentum, and are emitted without producing an electron sheath.

Here, the directivity imparting means forms an electric field such that the direction of momentum imparted to the electrons is the direction in which the electrons should be emitted. That is, an electric field is created that accelerates the electrons toward the ion beam trajectory and the space where the target, which is the object of charge neutralization, exists.

In this way, the invention neutralizes the effects of positive charges present on the ion beam trajectory and the target by emitting electrons towards them.

Furthermore, in the present invention, the directivity imparting means can be used to irradiate not only the ion beam trajectory and the target but also the substrate with the electrons emitted from the electron supply means. Therefore, even when controlling the characteristics of a film formed on a substrate using a secondary ion generator (assisting ion source), charges accumulated on the substrate can be erased.

(Margins below) C Example] Examples will be described below, but the present invention is not limited thereto.

The ion beam sputtering apparatus shown in FIG. 1 includes an ion generator ll that emits an ion beam 5, and an ion generator i! A target 6 that is irradiated with an ion beam 5 from 1 to emit sputter particles (film forming material) 7 and a substrate support (not shown) that holds a substrate 8 on which a film is to be formed by the sputter particles 7 are sputtered. have as a section, and
The neutralizer includes an electron supply source 9 that emits electrons into space, and directivity imparting means 11 that imparts directivity to the emitted electrons.

Further, although not shown in the drawings, the ion beam sputtering apparatus of this embodiment has a vacuum container and a vacuum pump like a general ion beam sputtering apparatus.

The ion generator 1 includes a filament 2, two extraction electrodes 3 and 4, a deceleration power source 10, and an acceleration power source 13. Ions generated from the filament 2 are transferred to an extraction electrode 3 connected to a deceleration power source 10 and an acceleration power source 13.
and 4, the ion beam 5 is drawn out of the ion generator 1 to form an ion beam 5.

In this embodiment, as the electron supply source 9 of the neutralizer, a filament 9a is used as an electron emitting part,
The filament 9a is heated by a power source (not shown) and emits thermoelectrons.

For example, a coiled filament 9a is used as the filament 9a.

The directivity imparting means 11 of the neutralizer includes a conductor 11a that functions as an electrode for forming an electric field, and a power source 10 that applies a negative potential to the conductor 11a.

The conductor 11a is arranged behind the filament 9a so as to form an electric field that accelerates electrons toward a space where the target 6 and the trajectory of the ion beam 5, which are arranged in front of the filament 9a, exist.

The shape of this conductor 11a is one that can form an electric field that acts on electrons as described above.
It has a groove-type structure, and the width of the opening surface is wider than the width of the bottom surface.

The power source 10 shares the deceleration power source 10 described above. Of course, a dedicated power source may also be used.

The operation of this embodiment will be explained.

In this embodiment as well, ion beam sputtering is performed in the same manner as in the conventional apparatus described above.

That is, the target 6 is irradiated with the ion beam 5 emitted from the ion generator N1, sputtered particles 7 are emitted from the target 6, and a film is formed on the substrate 8 using the sputtered particles 7.

In this embodiment, during this sputtering, the neutralizer operates as follows.

The electrons 12 emitted by the filament 9a are transferred to the conductor 11 which is given a negative potential by the deceleration power supply 10 of the ion generator 1.
It is accelerated by the electric field formed by a, receives momentum, and is accelerated in the direction of the ion beam 5 and target 6.

Therefore, the electrons are scattered and no electron sheath is generated around the filament 9a.

A group of electrons 12 (hereinafter also referred to as an electron group 12) emitted from the filament 9a travels in a wide manner, and some of them intersect the trajectory of the ion beam 5. Here, the electrons 12 are taken into the ion beam 5 and act to neutralize the positively charged ion beam 5. Therefore.

When the target 6 is irradiated with the ion beam 5.

The amount of charge accumulated in the target 6 decreases.

Further, a part of the electron group 12 traveling in space is incident on the target 6.

Since the electrons incident on the target 6 act to neutralize the positive charges on the target 6, the target 6 does not cause an increase in charge.

In this way, the neutralization of the ion beam 5 and the neutralization of the target 6
By neutralizing the target 6, an increase in the charge on the target 6 can be suppressed. Therefore, a decrease in sputtering rate is prevented.

Since the filament 9a is outside the orbit of the ion beam 5, the ion beam 5 does not sputter the filament 9a. Therefore, unlike the prior art described above, ions generated from the filament 9a are not taken into the target. ,moreover.

The ions of the filament 9a are not taken into the substrate 8, and the ions of the filament 9a are not contained in the substrate 8 as impurities.

Next, an experimental example of this embodiment will be described.

In the ion beam sputtering apparatus of this experimental example, the conductor 11a
180 m long, 30 m wide, 8 deep
A metal body of m was used. The conductor 11a is the ion generator W1
It was possible to apply a bias voltage of -80V by connecting it to the deceleration power supply 10 of .

As the filament 9a, a Ta wire with a diameter of 0.3 m and a length of 160 mw was used at a position 20 m5 away from the conductor 11a.

In this experimental example, sputtering was performed with a beam current of 50 mA and a filament current of 50 A. At this time, the filament 9a was energized to emit thermoelectrons, and a bias voltage of -5OV was applied to the conductor 11a.

When sputtering was performed in this state, the charging phenomenon on the target 6 was Il! There was no decrease in the sputtering rate. Further, when the obtained film was analyzed, no component constituting the filament 9a was detected.

On the other hand, as a comparative example, sputtering was performed in the above-described ion beam sputtering apparatus while energizing the filament 9a but without applying a negative potential to the conductor 11a. In this case, a charging phenomenon appeared on the target 6 during sputtering, and the sputtering rate decreased. The film obtained by sputtering for the same time as in the experimental example described above was thinner than the film obtained in the experimental example.

Figure 2 shows an auxiliary ion generator to control membrane properties!
! The configuration of an embodiment of an ion beam sputtering apparatus using (assisting ion source) 14 is shown.

This embodiment is a neutralizer comprising an electron supply source 9 and directivity imparting means 11, which is equipped with an auxiliary ion generator [14] for irradiating ions onto a substrate 8, and is also capable of neutralizing the substrate 8. The other configurations are the same as the embodiment shown in FIG. 1 described above. Therefore, the following description will focus on the differences.

The electron supply source 9 uses a filament 9a as an electron emitting portion, similar to that shown in FIG.

Here, the filament 9Ii is arranged in a range outside the orbit of both the ion beam 5 emitted from the ion generator 1 and the ion beam 15 emitted from the sub-ion generator 14.

The conductor 11a that constitutes the directivity imparting means 11 is as follows.

An electric field is formed that accelerates electrons emitted from the filament 9a constituting the electron supply source 9 toward the space where the substrate 8 exists in addition to the orbit of the ion beam 5 and the space where the target 6 exists. The shape and arrangement are possible. That is, the shape and arrangement are such that the conductor 11a emits electrons 12 over a wider range than the conductor 11a of the embodiment shown in the above-mentioned construction drawing. In this embodiment, the opening area of the conductor 11a is increased, and the mounting angle is set so that an electric field component is generated also in the direction of the substrate 8.

In this embodiment, when performing ion beam sputtering, the film formed on the substrate 8 is irradiated with the ion beam 15 from the sub-ion generator 14 to control the properties of the film.
Further, during this sputtering, charge neutralization is performed using a neutralizer.

Charge neutralization for the ion beam 5 and target 6 is performed in the same manner as in the embodiment shown in FIG. 1 described above.

Further, the charge neutralization on the substrate 8 is performed by the filament 9a.
A part of the electron group 12 emitted from the substrate 8 is accelerated in the direction of the substrate 8 by the electric field formed by the conductor 11a. As a result, the substrate 8 is irradiated with electrons 12, and the ion beam 15
Neutralizes the effects of positive charges caused by

FIG. 3 shows a ternary ion beam sputtering device as an example of a multiple ion beam sputtering device.

The ion beam sputtering apparatus of this embodiment includes three ion generators 1 and three targets 6 arranged correspondingly.
and a support stand (not shown) for supporting the substrate 8, and an electron supply source 9 and directivity imparting means 11 constituting a neutralizer. The three ion generators 1 and the three targets 6 are arranged in a one-to-one correspondence, and each target 6 is arranged so that the sputtered particles 7 emitted by each target reach the same substrate 8. Ru.

Similar to the embodiment shown in FIG. Place it in Further, the conductor 11a constituting the directivity imparting means 11 forms an electric field so that the electrons emitted from each ion generator 1 advance toward the trajectory of the ion beam 5 and the space where each target 6 exists. .

The ternary ion beam sputtering apparatus of this embodiment is suitable for forming films of ternary compounds, ternary alloys, multilayer films, etc. on the substrate 8.

Charge neutralization in the case of this embodiment has only a large number of targets, and its operation itself is the same as that of the embodiment shown in FIG.

In this example, one neutralizer is used to neutralize the charges in three sets of ion beam sputtering sections, so the internal structure of the ion beam sputtering apparatus is not complicated and the The space can be used effectively.

Note that, if spatially possible, a plurality of neutralizers may be provided.

In each of the embodiments described above, both the trajectory of the ion beam 5 from the ion generator 1 and the target 6 are irradiated with electrons to neutralize the influence of positive charges. Preferably,
Although the trajectory of the ion beam S and the target 6 should be irradiated with electrons, either one of them may be used.

Further, in each of the embodiments described above, the power supply used in the directivity imparting means 11 is a fixed voltage, but the voltage may be variable. Similarly, the current flowing through the filament 9a may also be variable. By adjusting these, the amount of electrons emitted from the neutralizer, that is, the magnitude of the output current can be controlled. This can also be used to change the sputtering rate.

By appropriately changing the sputtering rate, it is also possible to control the characteristics of the film formed on the substrate.

[Effects of the Invention] According to the present invention, since the electron emitting part of the electron supply source is not installed on the ion beam trajectory, impurities are not mixed into the film formed on the substrate, and a high-purity film can be obtained. can be obtained. Furthermore, since charge neutralization is performed and the potential of the target does not increase, the sputtering rate does not decrease and the film forming efficiency can be improved.

Furthermore, according to the present invention, when controlling the characteristics of a film formed on a substrate using a secondary ion generator, the charge accumulation on the substrate can be suppressed to a low potential by irradiating the substrate with electrons as well. This makes it possible to prevent dielectric breakdown of the film formed on the substrate.

[Brief explanation of drawings]

Fig. 1 is a schematic diagram showing the main part configuration of an embodiment of the ion beam generator of the present invention, and Fig. 2 is a schematic diagram showing the main part composition of an embodiment of the ion beam generator equipped with a sub-ion generator. , FIG. 3 is a schematic diagram showing the main part structure of an embodiment of a multi-dimensional ion beam sputtering apparatus, and FIG. 4 is a schematic diagram showing the main part structure of a conventionally used ion beam sputtering apparatus. Engineering...Ion generator, 2...Filament, 3゜4...Extraction electrode, 5...Ion beam, 6...
- Target, 7... Sputtered particles, 8... Substrate,
9... Electron supply source, 9a... Filament, 10.
...Deceleration power supply, 11...Directivity imparting means, lla...
・Conductor, 12...Electron, 13...Acceleration power source, 14.
・・Auxiliary ion generator (assist ion i!JX),
15...Ion beam.

Claims (8)

[Claims] 1. In an ion beam sputtering device in which a target is irradiated with an ion beam emitted from an ion generator and a thin film is formed on a substrate surface by sputtered particles emitted from the target, an electron emitting portion is placed outside the orbit of the ion beam. An ion beam sputtering apparatus comprising: a neutralizer having a supply source; and a directivity imparting means having a function of imparting momentum toward a desired direction to electrons emitted from the electron supply source. 2. In an ion beam sputtering device in which a target is irradiated with an ion beam emitted from an ion generator and a thin film is formed on a substrate surface by sputtered particles emitted from the target, an electron emitting portion is placed outside the orbit of the ion beam. A neutralizer having a supply source, a conductor near the electron supply source, and a power source that applies a negative potential to the conductor, wherein the conductor is configured to emit electrons emitted from the electron supply source by applying the negative potential. An ion beam sputtering apparatus characterized in that the ion beam sputtering apparatus has a shape that forms an electric field that causes the ion beam to proceed in a target direction. 3. 3. The ion beam sputtering apparatus according to claim 1, wherein the direction in which the electrons are directed is toward a target and/or a space in which an ion beam trajectory exists. 4. It has an ion generator and an auxiliary ion generator, irradiates a target with an ion beam emitted from the ion generator, forms a thin film on a substrate with sputtered particles emitted from the target, and An ion beam sputtering apparatus configured to irradiate a thin film formed by the sputtered particles with ions emitted from a generator, the electron supply source having an electron emitting portion disposed outside the orbit of the ion beam, and the electron supply source. An ion beam sputtering apparatus comprising: a neutralizer having a directivity imparting means having a function of imparting momentum toward a desired direction to electrons emitted from the ion beam sputtering apparatus. 5. It has an ion generator and an auxiliary ion generator, irradiates a target with an ion beam emitted from the ion generator, forms a thin film on a substrate with sputtered particles emitted from the target, and An ion beam sputtering apparatus configured to irradiate a thin film formed by the sputtered particles with ions emitted from a generator, comprising: an electron supply source in which an electron emitting part is disposed outside the orbit of the ion beam; A neutralizer has a conductor nearby and a power source that applies a negative potential to the conductor, and the conductor generates an electric field that causes electrons emitted from the electron source to travel in a desired direction by applying the negative potential. An ion beam sputtering apparatus characterized by having a shape that forms. 6. 6. The ion beam sputtering apparatus according to claim 4, wherein the target direction in which the electrons travel is a trajectory of the target and/or the ion beam, and a direction toward a space where the substrate is present. 7. 7. The ion beam sputtering apparatus according to claim 2, wherein an output of a deceleration power source of the ion beam generator is used as a power source for applying a negative potential to the conductor. 8. In a neutralizer device that emits electrons to an object to be charge-neutralized, the neutralizer has an electron-emitting portion and a function of forming an electric field that accelerates the electrons into a space containing the object to be charge-neutralized. A neutralizer device comprising: