JPH0379674B2 - - Google Patents

Info

Publication number
JPH0379674B2
JPH0379674B2 JP58193188A JP19318883A JPH0379674B2 JP H0379674 B2 JPH0379674 B2 JP H0379674B2 JP 58193188 A JP58193188 A JP 58193188A JP 19318883 A JP19318883 A JP 19318883A JP H0379674 B2 JPH0379674 B2 JP H0379674B2
Authority
JP
Japan
Prior art keywords
light
amount
reference voltage
work cloth
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58193188A
Other languages
Japanese (ja)
Other versions
JPS6085385A (en
Inventor
Hideo Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brother Industries Ltd
Original Assignee
Brother Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brother Industries Ltd filed Critical Brother Industries Ltd
Priority to JP58193188A priority Critical patent/JPS6085385A/en
Publication of JPS6085385A publication Critical patent/JPS6085385A/en
Publication of JPH0379674B2 publication Critical patent/JPH0379674B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geophysics And Detection Of Objects (AREA)

Description

【発明の詳細な説明】 技術分野 この発明は投光素子と受光素子とを備え、同両
者間に加工布を導入して同加工布を検出する検出
器に係り、詳しくはその検出器の検出感度を調整
する調整装置に関するものである。
[Detailed Description of the Invention] Technical Field The present invention relates to a detector that is equipped with a light emitting element and a light receiving element, and detects a work cloth by introducing a work cloth between the two, and specifically relates to a detection method of the detector. The present invention relates to an adjustment device that adjusts sensitivity.

従来技術 従来、加工布の通過状態を検出する投光素子と
受光素子とからなる加工布検出器は受光素子の受
光の有無若しくは受光量の多少に基づいて検出し
ていた。そして、加工布の厚さが変わつた場合、
検出レベルも変わるため、その都度感度を再調整
しなければならなかつた。殊に受光量の多少に基
づいて検出する場合にはその感度調整は非常に難
しく熟練を必要としていた。
Prior Art Conventionally, a work cloth detector consisting of a light emitting element and a light receiving element detects the passing state of the work cloth based on whether or not the light receiving element receives light or the amount of light received. And if the thickness of the processed cloth changes,
Since the detection level also changed, the sensitivity had to be readjusted each time. In particular, when detecting based on the amount of received light, adjusting the sensitivity is extremely difficult and requires skill.

例えば、この種の検出器を備えたミシンにおい
て、第1図A、Bに示す加工布(身頃)1の側縁
に沿つて本縫い目を形成したい場合における布終
了端検知、又は第2図A、Bに示す身頃1にポケ
ツト布片2を重ね合せ同布片2を身頃1に縫い合
せをする場合におけるポケツト布片2の布端(段
差部W2)検知ではその都度作業者は手作業で感
度調整を行なつていた。特にポケツト布片2を縫
い合せる際、その布片2の布端を検知する場合、
その重ね合せ部W1と重ね合せていない一枚部分
との光の透過量の多少すなわち受光素子の受光量
の多少に基づいて重ね合せ部W1かどうかを検出
していた。
For example, in a sewing machine equipped with this type of detector, it is possible to detect the end of the fabric when it is desired to form a final seam along the side edge of the workpiece cloth (body) 1 shown in FIGS. 1A and B, or to detect the end of the fabric as shown in FIG. , B When the pocket cloth piece 2 is superimposed on the body part 1 and the same cloth piece 2 is sewn to the body part 1, the operator manually detects the cloth edge (step W2) of the pocket cloth piece 2 each time. I was adjusting the sensitivity. Especially when detecting the edge of the pocket cloth 2 when sewing the pocket cloth 2,
It is detected whether or not the overlapped portion W1 exists based on the amount of light transmitted between the overlapped portion W1 and the non-overlaid portion, that is, the amount of light received by the light receiving element.

従つて、上記検出器において加工布を検出する
際において例えば身頃1が当初の設定より厚くな
つた場合、その光の透過量も変わるため、身頃1
自体がポケツト布片2との重ね合せ部W1である
かのように検出器が検出してしまい、誤作動の原
因となる虞があつた。そのため、従来においては
身頃1及びポケツト布片2の厚さが変わつた場
合、前記したような誤作動等の不都合を起こさな
いためにその厚みに応じて一々受光側の感度調整
を行つていたが、その感度調整は熟練を要し、か
つ非常に面倒なものとなつていた。
Therefore, when detecting the work cloth with the above-mentioned detector, for example, if the body 1 becomes thicker than the initial setting, the amount of light transmitted will also change.
The detector would detect it as if it were the overlapped portion W1 with the pocket cloth 2, which could cause malfunction. Therefore, in the past, when the thickness of the body 1 and the pocket cloth piece 2 changed, the sensitivity of the light receiving side was adjusted one by one according to the thickness in order to avoid problems such as malfunctions as described above. However, adjusting the sensitivity requires skill and is extremely troublesome.

目 的 この発明は前記問題点を解消するためになされ
たものであつて、その目的は加工布の厚さに応じ
てその光の透過量が変動しても検出器の検出感度
を自動的に最適な感度に調整することができ、そ
の調整作業の労力を軽減することのできる自動感
度調整装置を提供するにある。
Purpose This invention was made to solve the above problems, and its purpose is to automatically adjust the detection sensitivity of the detector even if the amount of light transmitted varies depending on the thickness of the work cloth. To provide an automatic sensitivity adjustment device that can adjust the sensitivity to the optimum sensitivity and reduce the labor of adjustment work.

実施例 以下この発明を具体化した一実施例を図面に従
つて説明する。
Embodiment An embodiment embodying the present invention will be described below with reference to the drawings.

第3図において、ミシンフレーム11はアーム
部12とベツト部13とを備え、そのアーム部1
2の頭部内に上下動可能に装着された針棒14に
針15が取着されている。そして、この針15と
ベツト部13内に設けた釜(図示せず)との協働
により加工布1に本縫い縫い目が形成されるよう
になつている。アーム部12の頭部前面には検出
器を構成する投光器16が取着され、第4図に示
すように発光ダイオードよりなる投光素子17を
内蔵したケース18が前記頭部前面に固設された
ホルダー19の収容筒部19a内にビス止めされ
ている。ケース18の下端部には透明の保護板1
8aが取り付けられ投光素子17にゴミが付着す
るのを防止する。
In FIG. 3, the sewing machine frame 11 includes an arm portion 12 and a bed portion 13.
A needle 15 is attached to a needle bar 14 which is vertically movably mounted in the head of the needle 2. A lockstitch seam is formed on the workpiece cloth 1 by the cooperation of this needle 15 and a hook (not shown) provided in the bed portion 13. A light projector 16 constituting a detector is attached to the front surface of the head of the arm portion 12, and a case 18 containing a built-in light projecting element 17 made of a light emitting diode is fixed to the front surface of the head, as shown in FIG. It is screwed into the accommodating cylindrical portion 19a of the holder 19. A transparent protective plate 1 is attached to the lower end of the case 18.
8a is attached to prevent dust from adhering to the light projecting element 17.

前記ベツト部13には滑板20及び針板21が
配設されていて、その針板21には針穴22から
送り込側へ所定の間隔をおいた位置に形成した嵌
合孔23に受光器24の上部が嵌合されている。
受光器24のケース25は第4図に示すように基
端部が前記ベツト部13に対してビス止めされて
いるとともに上端に透明の保護板25aが取付け
られている。前記ケース25内に設けられたホト
トランジスタよりなる受光素子26は前記投光素
子17と相対向するように配設されていて同投光
素子17からの光を直接受光するとともに、加工
布1が送り込み側から縫合位置へ送り込まれ同加
工布1によつて遮られたとき、その加工布1を透
過してくる投光素子17からの光(透過光)を受
光する。
A sliding plate 20 and a throat plate 21 are arranged on the bed portion 13, and a light receiver is inserted into a fitting hole 23 formed in the needle plate 21 at a predetermined distance from the needle hole 22 toward the feeding side. The upper part of 24 is fitted.
As shown in FIG. 4, the case 25 of the light receiver 24 has a base end secured to the bed part 13 with screws, and a transparent protection plate 25a is attached to the upper end. A light-receiving element 26 made of a phototransistor provided in the case 25 is arranged to face the light-emitting element 17, and directly receives the light from the light-emitting element 17. When the work cloth 1 is fed into the sewing position from the feed side and blocked by the work cloth 1, the light (transmitted light) from the light projecting element 17 that passes through the work cloth 1 is received.

次に、前記投光素子17及び受光素子26等か
らなる検出器の電気回路について説明する。
Next, an electric circuit of the detector consisting of the light emitting element 17, the light receiving element 26, etc. will be explained.

第6図において、投光素子17は抵抗R1、増
幅器31を介して発振器32から出力されるチヨ
ツパ信号SG1(第7図参照)を同増幅器31で
増幅反転させて整形したパルス信号SG2が印加
され、同信号SG2に基づいて発光される。トラ
ンジスタTrはそのコレクタ端子に前記投光素子
17の一端が接続されているとともにコレクタ−
エミツタ端子間に抵抗R2が接続されている。そ
して、トランジスタTrがオン状態の時、電流制
限抵抗は前記抵抗R1だけとなり同投光素子17
に流れる電流は大となつて投光素子17の発光量
が大きくなる。反対にトランジスタTrがオフ状
態の時、電流制限抵抗は抵抗R1,R2となり、
投光素子17に流れる電流は小となつて投光素子
17の発光量が小さくなる。
In FIG. 6, a pulse signal SG2 is applied to the light projecting element 17 via a resistor R1 and an amplifier 31, which is a chopper signal SG1 (see FIG. 7) outputted from an oscillator 32, which is amplified and inverted by the same amplifier 31 and shaped. , the light is emitted based on the same signal SG2. The transistor Tr has its collector terminal connected to one end of the light emitting element 17, and the collector terminal of the transistor Tr.
A resistor R2 is connected between the emitter terminals. When the transistor Tr is in the on state, the current limiting resistor is only the resistor R1, and the light emitting element 17
As the current flowing through becomes large, the amount of light emitted from the light projecting element 17 becomes large. On the other hand, when the transistor Tr is in the off state, the current limiting resistance becomes the resistors R1 and R2,
The current flowing through the light projecting element 17 becomes small, and the amount of light emitted by the light projecting element 17 becomes small.

前記受光素子26は投光素子17から出力され
る光の受光量に比例したレベルの出力電圧V1を
出力し、その出力電圧V1がバンドパスフイルタ
ー33を介して可変減衰器34に出力される。可
変減衰器34は前記出力電圧V1をOdBから−
60dBの範囲で減衰し増幅器35を介して減衰出
力電圧V2としてコンパレータ36に出力するよ
うになつていて、この減衰量は後記する入出力イ
ンターフエイス46を介して中央処理装置43か
ら出力される制御信号SG3に基づいて段階的
(本実施例では2dB毎)に可変制御されるように
なつている。
The light receiving element 26 outputs an output voltage V1 having a level proportional to the amount of light received from the light projecting element 17, and the output voltage V1 is outputted to the variable attenuator 34 via the bandpass filter 33. The variable attenuator 34 changes the output voltage V1 from OdB to -
It is designed to be attenuated in a range of 60 dB and output to a comparator 36 as an attenuated output voltage V2 via an amplifier 35, and this amount of attenuation is output from the central processing unit 43 via an input/output interface 46 to be described later. Variable control is performed in steps (in this embodiment, in steps of 2 dB) based on the signal SG3.

前記コンパレータ36はこの減衰出力電圧V2
と基準電圧変更手段としての基準電圧設定器37
からの基準電圧Vsとを比較し、減衰出力電圧V
2より基準電圧Vsが大きいときHレベル(プラ
ス電位)の、又その反対の場合にはLレベル(O
電位)の検出信号SG4を出力する。前記基準電
圧設定器37は基準電圧Vsを本実施例では3Vか
ら5Vの範囲で変更でき、後記する入出力インタ
ーフエイス46を介して中央処理装置43から出
力される制御信SG5に基づいて段階的(本実施
例では±1dB毎)に可変制御されるようになつて
いる。
The comparator 36 detects this attenuated output voltage V2.
and a reference voltage setting device 37 as a reference voltage changing means.
The attenuated output voltage V is compared with the reference voltage Vs from
When the reference voltage Vs is larger than 2, the H level (positive potential) is reached, and in the opposite case, the L level (O
outputs a detection signal SG4 (potential). The reference voltage setter 37 can change the reference voltage Vs in the range of 3V to 5V in this embodiment, and changes the reference voltage Vs in stages based on a control signal SG5 output from the central processing unit 43 via an input/output interface 46, which will be described later. It is designed to be variably controlled (in steps of ±1 dB in this embodiment).

前記コンパレータ36から出力される検出信号
SG4を入力する第1のフリツプフロツプ回路
(以下、第1のFF回路という)38はLレベルの
検出信号SG4の立ち下がりによつて反転され同
回路38のQ端子の出力がHレベルからLレベル
となる。第2のフリツプフロツプ回路(以下、第
2のFF回路という)39は前記第1のFF回路3
8のHレベルからLレベルの立ち下がりに応答し
てそのQ端子の出力SG6をHレベルからLレベ
ルに反転させる。又、両第1及び第2のFF回路
38,39は前記発振器32のチヨツパ信号SG
1の立ち下がりでそれぞれリセツトされるように
なつている。
Detection signal output from the comparator 36
The first flip-flop circuit (hereinafter referred to as the first FF circuit) 38 inputting SG4 is inverted by the fall of the L level detection signal SG4, and the output of the Q terminal of the circuit 38 changes from the H level to the L level. Become. A second flip-flop circuit (hereinafter referred to as a second FF circuit) 39 is connected to the first FF circuit 3.
In response to the falling from the H level to the L level of 8, the output SG6 of the Q terminal is inverted from the H level to the L level. Further, both the first and second FF circuits 38 and 39 receive the chopper signal SG of the oscillator 32.
Each bit is reset at the falling edge of 1.

EXOR回路40は第1及び第2のFF回路38,
39の端子の出力を入力するようになつてい
て、両端子が互いに同じレベルのときLレベル
の出力SG7を、両端子が互いに異なるときH
レベルの出力SG7を出力する。
The EXOR circuit 40 includes the first and second FF circuits 38,
39 terminals are input, and when both terminals are at the same level, the output SG7 is at L level, and when both terminals are at different levels, the output is at H level.
Output level output SG7.

感度調整スイツチ41は検出器を作動させるた
めのスイツチであつて、同スイツチ41のオン信
号は入出力インターフエイス46を介して中央処
理装置43に出力される。モニタ用発光ダイオー
ド42は中央処理装置43の制御信号に基づいて
点灯制御される。尚、感度調整スイツチ41及び
発光ダイオード42はミシンフレーム11の所定
の位置、例えばアーム部12の頭部前面の操作及
び視認可能な位置に設けている。
The sensitivity adjustment switch 41 is a switch for operating the detector, and an on signal from the switch 41 is outputted to the central processing unit 43 via the input/output interface 46. The lighting of the monitor light emitting diode 42 is controlled based on a control signal from the central processing unit 43. The sensitivity adjustment switch 41 and the light emitting diode 42 are provided at predetermined positions on the sewing machine frame 11, for example, at a position in front of the head of the arm portion 12 where they can be operated and viewed.

中央処理装置(以下、CPUという)43は読
み出し専用のメモリ(以下、ROMという)44
と読み出し及び書き替え可能なメモリ(以下、
RAMという)45を備え、前記可変減衰器34
の減衰量を段階的に変更するための制御信号SG
3を入出力インターフエイス46を介して同減衰
器34に出力するとともに、前記基準電圧設定器
37の基準電圧Vsを段階的に変更するための制
御信号SG5を同インターフエイス26を介して
同設定器37に出力する。又、CPU43は前記
トランジスタTrをオン、オフ制御するとともに、
第2のFF回路39のQ端子出力レベルを検知し
て基準電圧Vsより減衰出力電圧V2が大きくな
つたかどうかを判定し、同判定結果に基づいて可
変減衰器34及び基準電圧設定器37に出力する
制御信号SG3、SG5の制御量を決定するように
なつている。
A central processing unit (hereinafter referred to as CPU) 43 has a read-only memory (hereinafter referred to as ROM) 44
and readable and rewritable memory (hereinafter referred to as
RAM) 45, and the variable attenuator 34
Control signal SG for changing the attenuation amount of
3 to the attenuator 34 via the input/output interface 46, and also sets a control signal SG5 for changing the reference voltage Vs of the reference voltage setter 37 in stages via the interface 26. output to the device 37. Further, the CPU 43 controls the transistor Tr on and off, and
The Q terminal output level of the second FF circuit 39 is detected to determine whether the attenuated output voltage V2 has become larger than the reference voltage Vs, and output to the variable attenuator 34 and the reference voltage setter 37 based on the determination result. The control amount of control signals SG3 and SG5 is determined.

次に前記のように構成した検出器の作用を第9
図に示すCPU43の動作を示すフローチヤト図
に従つて説明する。
Next, the operation of the detector configured as described above will be explained in the ninth section.
The operation of the CPU 43 shown in the figure will be explained according to a flow chart.

今、第2図A、Bに示すようにポケツト布片2
を加工布1に縫い合せる場合における検出器の感
度調整を行うべく、まず、加工布1のみを受光素
子26上に載せた後、感度調整スイツチ41をオ
ンさせると、CPU43はモニタ用発光ダイオー
ド42を消すステツプ1の処理動作を行うととも
にトランジスタTrをオンさせるステツプ2の処
理動作を行う。次にCPU43は基準電圧設定器
37から出力される基準電圧VSを最小(3V)に
すべく同設定器37に制御信号SG5を出力する
ステツプ3の処理動作を行うとともに、可変減衰
器34の減衰量を最大(−60dB)にすべく同減
衰器34に制御信号SG3を出力するステツプ4
の処理動作を行う。一方、これと同時に発振器3
2からチヨツパ信号SG1が出力される。
Now, as shown in Figure 2 A and B, pocket cloth piece 2
In order to adjust the sensitivity of the detector when stitching the work cloth 1 to the work cloth 1, first place only the work cloth 1 on the light receiving element 26, and then turn on the sensitivity adjustment switch 41. The processing operation of step 1 is performed to turn off the transistor Tr, and the processing operation of step 2 is performed to turn on the transistor Tr. Next, the CPU 43 performs the processing operation of step 3 to output a control signal SG5 to the reference voltage setter 37 in order to minimize the reference voltage VS output from the reference voltage setter 37 (3V), and attenuates the variable attenuator 34. Step 4: Outputting the control signal SG3 to the attenuator 34 to maximize the amount (-60dB)
Performs processing operations. Meanwhile, at the same time, the oscillator 3
2 outputs a chopper signal SG1.

従つて、投光素子17はこの発振器32の発振
動作に基づいて点滅動作が開始される。この時、
トランジスタTrはオン状態なので電流制限抵抗
は抵抗R1だけなので投光素子17は発光量が大
の状態となる。一方、第1及び第2のFF回路3
8,39は発振器32のチヨツパ信号SG1の最
初の立ち下がりによつてリセツト状態となり、
EXOR回路40からの出力SG7はLレベルの状
態になつている。
Therefore, the light projecting element 17 starts blinking based on the oscillation operation of the oscillator 32. At this time,
Since the transistor Tr is in an on state, the only current limiting resistor is the resistor R1, so the light emitting element 17 is in a state where the amount of light emitted is large. On the other hand, the first and second FF circuits 3
8 and 39 are reset by the first fall of the chopper signal SG1 of the oscillator 32,
The output SG7 from the EXOR circuit 40 is at L level.

CPU43はこのLレベルに基づいて両FF回路
38,39が単発ノイズ信号で誤動作していない
ことを判別するステツプ5の処理動作を行う。
尚、この時、EXOR回路40の出力SG7がHレ
ベルのとき両FF回路38,39が誤動作してい
ると判断して同回路40の出力SG7がLレベル
になるまで、即ち、両FF回路38,39がリセ
ツトされるまで待機する。
Based on this L level, the CPU 43 performs a processing operation in step 5 to determine whether both FF circuits 38 and 39 are not malfunctioning due to a single noise signal.
At this time, when the output SG7 of the EXOR circuit 40 is at the H level, it is determined that both FF circuits 38 and 39 are malfunctioning, and the output SG7 of the EXOR circuit 40 is at the L level. , 39 are reset.

さて、投光素子17から出力された光は加工布
1を透過して受光素子26に受光される。この透
過光を受光した受光素子26はその透過光量に比
例した出力電圧V1をバンドパスフイルター33
を介して可変減衰器34に出力する。可変減衰器
34はこの出力電圧V1を減衰(−60dB)させ
て増幅器35を介して減衰出力電圧V2としてコ
ンパレータ36に出力する。この時、減衰出力電
圧V2は最大に減衰された値なので、最初は第8
図に示すように基準電圧Vsより遥かに小さくそ
の結果コンパレータ36の検出信号SG4はHレ
ベルとなる。このHレベルの検出信号SG4に基
づいて第1及び第2のFF回路38,39は反転
せず、第2のFF回路39のQ端子の出力SG6は
Hレベルのままとなる。
Now, the light output from the light projecting element 17 passes through the work cloth 1 and is received by the light receiving element 26. The light receiving element 26 that received this transmitted light transmits an output voltage V1 proportional to the amount of transmitted light to the band pass filter 33.
The signal is output to the variable attenuator 34 via. The variable attenuator 34 attenuates this output voltage V1 (-60 dB) and outputs it to the comparator 36 via the amplifier 35 as an attenuated output voltage V2. At this time, the attenuated output voltage V2 is the maximum attenuated value, so initially the 8th
As shown in the figure, it is much smaller than the reference voltage Vs, and as a result, the detection signal SG4 of the comparator 36 becomes H level. Based on this H level detection signal SG4, the first and second FF circuits 38 and 39 are not inverted, and the output SG6 of the Q terminal of the second FF circuit 39 remains at the H level.

CPU43はこの出力に基づいてステツプ6の
処理動作を行う。この時、CPU43は出力SG6
がLレベルということに基づいて減衰出力電圧V
2が基準電圧Vsより小さいことを判定する。こ
の判定結果に基づいてCPU43は可変減衰器3
4の減衰量が最小かどうかの判別をするステツプ
7の処理動作を行う。そして、この時、減衰量は
最大であることに基づいてCPU43は減衰量を
1段階小さくするための制御信号SG3を出力す
るステツプ8の処理動作を行う。従つて、この時
点で可変減衰器34の減衰量は1段小さくなつた
状態となる。
The CPU 43 performs the processing operation in step 6 based on this output. At this time, CPU43 outputs SG6
is at L level, the attenuated output voltage V
2 is smaller than the reference voltage Vs. Based on this determination result, the CPU 43 selects the variable attenuator 3.
The processing operation of step 7 is performed to determine whether the attenuation amount of step 4 is the minimum. At this time, based on the fact that the amount of attenuation is the maximum, the CPU 43 performs the processing operation of step 8 to output a control signal SG3 for reducing the amount of attenuation by one step. Therefore, at this point, the attenuation amount of the variable attenuator 34 is reduced by one step.

この状態から次の第2番目のチヨツパ信号SG
1が出力されると、第1及び第2のFF回路38,
39がリセツトされるとともに投光素子17が再
び点滅する。そして、この発光により受光素子2
6は透過光量が前記と同じであることから前記と
同じレベルの出力電圧V1を可変減衰器34に出
力する。可変減衰器34の減衰量が1段小さくな
つたことにより、コンパレータ36に出力される
減衰出力電圧V2は第8図に示すように減衰量が
小さくなつた分大きくなる。
From this state, the next second chopper signal SG
When 1 is output, the first and second FF circuits 38,
39 is reset and the light projecting element 17 blinks again. This light emission causes the light receiving element 2 to
6 outputs an output voltage V1 at the same level as above to the variable attenuator 34 since the amount of transmitted light is the same as above. Since the amount of attenuation of the variable attenuator 34 is reduced by one step, the attenuated output voltage V2 outputted to the comparator 36 increases by the amount of attenuation reduced, as shown in FIG.

コンパレータ36はこの減衰出力電圧V2と基
準電圧Vsとを前記と同様に比較検出する。この
時、第8図に示すようにいまだ基準電圧Vsが大
きいことから前記と同様に第1及び第2のFF回
路38,39が動作することになり、CPU43
は前記と同じ処理動作を行い減衰器34の減衰量
を1段階下げる。以後、CPU43は減衰出力電
圧V2が基準電圧Vsより大きくなるまで(越え
るまで)減衰器34の減衰量を段階的に小さくし
て減衰出力電圧V2のレベルを順次大きくして行
く。
The comparator 36 compares and detects this attenuated output voltage V2 and the reference voltage Vs in the same manner as described above. At this time, as shown in FIG. 8, since the reference voltage Vs is still large, the first and second FF circuits 38 and 39 operate as before, and the CPU 43
performs the same processing operation as above and lowers the attenuation amount of the attenuator 34 by one step. Thereafter, the CPU 43 gradually decreases the amount of attenuation of the attenuator 34 until the attenuated output voltage V2 becomes larger than (exceeds) the reference voltage Vs, and gradually increases the level of the attenuated output voltage V2.

尚、前記動作を繰り返している途中に、可変減
衰器34の減衰量が最小になつた時、CPU43
はモニタ用発光ダイオード42を10回点滅動作さ
せるステツプ18の処理動作を行い作業者に検出不
能を知らせる。そして、次にCPU43は同発光
ダイオード42をオフするステツプ19の処理動作
を行つて終了する。
Furthermore, while repeating the above operation, when the attenuation amount of the variable attenuator 34 reaches the minimum, the CPU 43
Then, the processing operation of step 18 is performed in which the monitor light emitting diode 42 is blinked 10 times, and the operator is notified that detection is not possible. Then, the CPU 43 performs the processing operation of step 19 to turn off the light emitting diode 42, and ends the process.

やがて、投光素子17が5回目の点滅動作が行
われ、コンパレータ36に出力される減衰出力電
圧V2が第8図に示すように基準電圧Vsより大
きくなると、同コンパレータ36の検出値SG4
はLレベルとなり第1及び第2のFF回路38,
39を反転させ、第2のFF回路39のQ出力端
子の出力SG6をLレベルにする。CPU43はこ
のLレベルにより、基準電圧Vsを減衰出力電圧
V2が越えたことを判定してステツプ9の処理動
作に移る。
Eventually, the light emitting element 17 performs the fifth blinking operation, and when the attenuated output voltage V2 output to the comparator 36 becomes larger than the reference voltage Vs as shown in FIG. 8, the detected value SG4 of the comparator 36 increases.
becomes L level and the first and second FF circuits 38,
39 is inverted, and the output SG6 of the Q output terminal of the second FF circuit 39 is set to L level. Based on this L level, the CPU 43 determines that the attenuated output voltage V2 has exceeded the reference voltage Vs, and proceeds to the processing operation of step 9.

CPU43は現在の可変減衰器34の減衰量が
予め定めた基準減衰量Pより大きいかどうかの判
別を行う。基準減衰量Pを被検出物体としての加
工布1が厚物か薄物かを判別、すなわち、加工布
1が透過性の悪いもの又は良いものかを判定し、
当該減衰器34の減衰量で加工布検知を行う際、
透過性の良いものであれば投光素子17の発光量
を小さくし、反対に透過性の悪いものであれば発
光量を大きくして最適な状態で布検知をするため
の目安となる値であつて、ここで当該加工布1と
ポケツト布片2との縫い合せる場合における投光
素子17の最適な光量が決定される。
The CPU 43 determines whether the current attenuation amount of the variable attenuator 34 is larger than a predetermined reference attenuation amount P. The reference attenuation amount P is used to determine whether the work cloth 1 as the object to be detected is thick or thin, that is, to determine whether the work cloth 1 has poor or good transparency.
When detecting the work cloth using the attenuation amount of the attenuator 34,
This is a value that serves as a guideline for detecting cloth in the optimal condition by reducing the amount of light emitted from the light emitting element 17 if it has good transparency, and increasing the amount of light emitted if it has poor transparency. At this point, the optimum amount of light from the light projecting element 17 is determined when the work cloth 1 and the pocket cloth piece 2 are sewn together.

そして、透過性のある例えば薄物の加工布1の
場合にはCPU43はトランジスタTrをオフして
投光素子17の発光量を下げるステツプ10の処理
動作を行つた後、この投光素子17の発光量の条
件のもとで再び前記と同様の処理動作が実行され
る。
In the case of a thin workpiece cloth 1 that is transparent, for example, the CPU 43 turns off the transistor Tr and performs the processing operation of step 10 to reduce the amount of light emitted from the light emitting element 17, and then performs the processing operation of step 10 to reduce the amount of light emitted from the light emitting element 17. Processing operations similar to those described above are performed again under the condition of quantity.

一方、透過性の悪い例えば厚物の場合には
CPU43は前記基準電圧Vsのレベルを第8図に
示すように1段階上げるべく制御信号SG5を基
準電圧設定器37に出力するステツプ11の処理動
作を行う。
On the other hand, in the case of thick materials with poor transparency,
The CPU 43 performs a processing operation in step 11 of outputting a control signal SG5 to the reference voltage setter 37 in order to raise the level of the reference voltage Vs by one step as shown in FIG.

この状態で次のチヨツパ信号G1が出力される
と、第1及び第2のFF回路38,39がリセツ
トされEXOR回路40の出力SG7がLレベルと
なる。そして、CPU43は前記ステツプ5と同
じ内容のステツプ12の処理動作を行なう。一方、
これと同時に投光素子17が点滅動作されると、
コンパレータ36には前回と同じレベルの減衰出
力電圧V2が入力され同減衰出力電圧V2と1段
階上がつた基準電圧Vsとが同コンパレータ36
で比較される。この時、第8図に示すように、減
衰出力電圧V2は基準電圧Vsより大きいので、
コンパレータ36の検出信号SG4はLレベルと
なり、第1及び第2のFF回路38,39は反転
し、第2のFF回路39のQ端子の出力SG6はL
レベルとなる。CPU43はこのLレベルに基づ
いて、減衰出力電圧V2が基準電圧Vsより大き
いことを判定するステツプ13の処理動作を行う。
この判定信号に基づいてCPU43は基準電圧Vs
を1段上げるための前記ステツプ11の処理動作を
再び行う。
When the next chopper signal G1 is output in this state, the first and second FF circuits 38 and 39 are reset and the output SG7 of the EXOR circuit 40 becomes L level. Then, the CPU 43 performs the processing operation of step 12, which is the same as step 5. on the other hand,
At the same time, when the light emitting element 17 is blinked,
The attenuated output voltage V2 at the same level as the previous time is input to the comparator 36, and the attenuated output voltage V2 and the reference voltage Vs which is one step higher are input to the comparator 36.
are compared. At this time, as shown in FIG. 8, since the attenuated output voltage V2 is larger than the reference voltage Vs,
The detection signal SG4 of the comparator 36 becomes L level, the first and second FF circuits 38 and 39 are inverted, and the output SG6 of the Q terminal of the second FF circuit 39 becomes L level.
level. Based on this L level, the CPU 43 performs the processing operation of step 13 to determine that the attenuated output voltage V2 is larger than the reference voltage Vs.
Based on this judgment signal, the CPU 43 outputs the reference voltage Vs.
The processing operation of step 11 is performed again to raise the value by one step.

従つて、この時点で基準電圧Vsのレベルはさ
らに1段上げられる。そして、以後CPU43は
減衰器34の減衰量を一定のままに保持した状態
で、前記基準電圧Vsが減衰出力電圧V2より大
きくなるまで基準電圧設定器34の減衰量を段階
的に順次大きくして行く。
Therefore, at this point, the level of the reference voltage Vs is further increased by one step. Thereafter, the CPU 43 keeps the attenuation amount of the attenuator 34 constant and gradually increases the attenuation amount of the reference voltage setter 34 until the reference voltage Vs becomes larger than the attenuation output voltage V2. go.

やがて、投光素子17が9回目の点滅動作を行
い、コンパレータ36に入力される基準電圧Vs
が第8図に示すように、減衰出力電圧V2より大
きくなると、同コンパレータ36はHレベルとな
り、第1及び第2のFF回路38,39は反転せ
ず、第2のFF回路39のQ出力端子の出力SG6
をHレベルのままとなる。CPU43はこのレベ
ルにより、基準電圧Vsが減衰出力V2を越えた
ことを判定してステツプ14の処理動作に移る。
CPU43はこの判定結果に基づいてトランジス
タTrがオンかオフかどうかを判断し、トランジ
スタTrがオンの場合には厚物用のための最適基
準電圧値Vsaの設定のための処理動作(ステツプ
15)を行い、反対にオフの場合には薄物用の最適
基準電圧値Vsuの設定のための処理動作(ステツ
プ16)をおこなう。
Eventually, the light emitting element 17 performs the ninth blinking operation, and the reference voltage Vs input to the comparator 36
As shown in FIG. 8, when the attenuated output voltage V2 becomes larger, the comparator 36 becomes H level, the first and second FF circuits 38 and 39 are not inverted, and the Q output of the second FF circuit 39 Terminal output SG6
remains at H level. Based on this level, the CPU 43 determines that the reference voltage Vs has exceeded the attenuation output V2, and proceeds to the processing operation of step 14.
Based on this determination result, the CPU 43 determines whether the transistor Tr is on or off. If the transistor Tr is on, the CPU 43 performs processing operations (steps) for setting the optimum reference voltage value Vsa for thick materials.
15), and on the other hand, if it is off, a processing operation (step 16) for setting the optimum reference voltage value Vsu for thin objects is performed.

この場合、トランジスタTrは前記したように
オン状態なので、CPU43はステツプ15の処理
動作を行い現在の基準電圧Vsから予め設定した
厚物マージン値(基準電圧Vsを若干下げ厚物の
布検知を確実に行うために余裕をもたせるための
値)K1を引き算して厚物用最適基準電圧設定値
Vsaを算出し、RAM45に記憶するとともに、
その時の可変減衰器34の減衰量及びトランジス
タTrのオン,オフ状態を同RAM45に記憶す
る。
In this case, since the transistor Tr is in the on state as described above, the CPU 43 performs the processing operation in step 15 and lowers the reference voltage Vs slightly to the thick material margin value set in advance from the current reference voltage Vs to ensure detection of the thick material. Subtract K1 (a value to provide some margin for the process) to find the optimal reference voltage setting value for thick materials.
Calculate Vsa and store it in RAM45,
The attenuation amount of the variable attenuator 34 and the on/off state of the transistor Tr at that time are stored in the RAM 45.

尚、前記ステツプ16の処理動作においてトラン
ジスタTrがオフの場合にはCPU43は現在の基
準電圧Vsから予め設定した薄物マージン値(基
準電圧Vsを若干下げて薄物の加工布検知を確実
に行うために余裕をもたせるための値)K2を引
き算して薄物用最適基準電圧設定値Vsuを算出
し、RAM45に記憶するとともに、その時の可
変減衰器34の減衰量及びトランジスタTrのオ
ン,オフ状態を同RAM45に記憶することにな
る。
In addition, when the transistor Tr is off in the processing operation of step 16, the CPU 43 calculates a preset thin material margin value from the current reference voltage Vs (in order to slightly lower the reference voltage Vs to ensure detection of thin material work cloth). The optimal reference voltage setting value Vsu for thin objects is calculated by subtracting K2 (a value to provide a margin), and is stored in the RAM 45. At the same time, the attenuation amount of the variable attenuator 34 and the on/off state of the transistor Tr at that time are stored in the RAM 45. will be memorized.

RAM45に上記した厚物最適基準電圧値Vsa
及び可変減衰器34の減衰量等が記憶されると、
CPU43は前記モニタ用発光ダイオード42を
点灯させるステツプ17の処理動作を行い検出器の
感度調整が完了したことを作業者に知らせた後、
一連の加工布1の感度調整作業を終える。
Thick material optimum reference voltage value Vsa mentioned above for RAM45
When the attenuation amount and the like of the variable attenuator 34 are stored,
After the CPU 43 carries out the processing operation in step 17 to turn on the monitor light emitting diode 42 and informs the operator that the sensitivity adjustment of the detector is completed,
A series of sensitivity adjustment operations for the work cloth 1 are completed.

調整作業が終了し、作業者がこの加工布1とポ
ケツト布片2を重ね合わせ縫製位置に案内して縫
製を開始すると、CPU43は前記感度調整モー
ドから加工布検知モードに変る。CPU43は前
記RAM45に記憶させた最適基準電圧値Vsa及
びトランジスタTrをオン状態にしたときにおけ
る減衰器34の減衰量のデータを読み出す。そし
て、CPU43はこのデータに基づいて基準電圧
設定器37から厚物最適基準電圧設定値Vsaを出
力させるための制御信号SG5を出力するととも
に、トランジスタTrをオンさせ、かつ、減衰器
34の減衰量を前記した減衰量となるように制御
信号SG3を出力する。
When the adjustment work is completed and the operator guides the work cloth 1 and the pocket cloth piece 2 to the overlapping sewing position and starts sewing, the CPU 43 changes from the sensitivity adjustment mode to the work cloth detection mode. The CPU 43 reads out the optimal reference voltage value Vsa stored in the RAM 45 and data on the amount of attenuation of the attenuator 34 when the transistor Tr is turned on. Then, based on this data, the CPU 43 outputs a control signal SG5 for causing the reference voltage setter 37 to output the thick material optimum reference voltage setting value Vsa, turns on the transistor Tr, and turns on the attenuation amount of the attenuator 34. The control signal SG3 is outputted so that the above-mentioned attenuation amount is achieved.

そして、検出器が第2図Bに示す2枚重なつた
部分W1を検出しているときには投光素子17か
らの光はポケツト布片2及び加工布1を通つて受
光素子26に到達するため、前記加工布1だけで
行つた感度調整処理動作のときより投光素子17
が受光する量は少なくなる。従つて、減衰出力電
圧V2は最適基準電圧設定値Vsaより遥かに小さ
くなることからコンパレータ36の検出信号SG
4はHレベルとなり、このHレベルに基づいて
CPU43は今2枚重なつた部分W1が受光素子
26上を通過していることを判断する。
When the detector detects the overlapped portion W1 shown in FIG. , the light emitting element 17 is larger than the sensitivity adjustment processing operation performed using only the work cloth 1.
The amount of light received will decrease. Therefore, since the attenuated output voltage V2 is much smaller than the optimum reference voltage setting value Vsa, the detection signal SG of the comparator 36
4 becomes H level, and based on this H level
The CPU 43 determines that the two overlapping portions W1 are now passing over the light receiving element 26.

縫製が進み受光素子26上にポケツト布片2の
布端が来た時、すなわち段差部W2が来た時、投
光素子17の光は加工布1のみを通つて受光素子
26に到達するため、前記加工布1だけで行つた
感度調整処理動作のときと同じ受光量を受光素子
26が受光することになる。従つて、減衰出力電
圧V2は最適基準電圧設定値Vsaより大きくなる
ことからコンパレータ36の検出信号SG4はL
レベルとなり、このLレベルに基づいてCPU4
3は今段差部分W2が受光素子26上を通過して
いることを判断する。
When the sewing progresses and the edge of the pocket cloth piece 2 reaches the light-receiving element 26, that is, when the step W2 comes, the light from the light-emitting element 17 reaches the light-receiving element 26 through only the workpiece cloth 1. , the light receiving element 26 receives the same amount of light as in the sensitivity adjustment processing operation performed only with the work cloth 1. Therefore, since the attenuated output voltage V2 becomes larger than the optimum reference voltage setting value Vsa, the detection signal SG4 of the comparator 36 becomes L.
level, and based on this L level, CPU4
3 determines that the stepped portion W2 is now passing over the light receiving element 26.

このように本実施例において、加工布1を予め
受光素子26上に置くだけで同加工布1の厚さ及
び材質等に応じてこの2枚重ね合せて縫い合せる
場合の検出器の最適感度、すなわち、その加工布
1の厚さに応じた最適な投光量が判定されるとと
もに、その最適投光量に対応する受光量の基準値
が自動的に設定されることになる。
In this way, in this embodiment, the optimal sensitivity of the detector is determined when the two pieces of work cloth 1 are overlapped and sewn together depending on the thickness and material of the work cloth 1 by simply placing the work cloth 1 on the light receiving element 26 in advance. In other words, the optimum amount of light to be projected according to the thickness of the work cloth 1 is determined, and the reference value for the amount of received light corresponding to the optimum amount of light to be projected is automatically set.

尚、第1図A、Bに示すように1枚の加工布1
の側縁に沿つて縫い目形成する場合には加工布1
を受光素子26上に置くことなく直接投光素子1
7の光を受光素子26に照射させることによつて
感度調整処理が行われる。そして、前記と同様な
感度処理動作が行われ、加工布1の側縁に沿つて
縫い目形成する場合における検出器の最適感度が
設定される。
In addition, as shown in FIG. 1A and B, one piece of work cloth 1
When forming seams along the side edges of the processed fabric 1
directly onto the light emitting element 1 without placing it on the light receiving element 26.
Sensitivity adjustment processing is performed by irradiating the light receiving element 26 with the light No. 7. Then, a sensitivity processing operation similar to that described above is performed, and the optimal sensitivity of the detector when forming a seam along the side edge of the work cloth 1 is set.

そして、この場合の調整作業が終了し、作業者
がこの加工布1を縫製位置に案内して縫製を開始
すると、CPU43は前記感度調整モードから加
工布検知モードに変る。CPU43は前記RAM4
5に記憶させた最適基準電圧値Vsa若しくはVsu
及びトランジスタTrをオン,オフ状態にしたと
きにおける減衰器34の減衰量のデータを読み出
す。そして、CPU43はこのデータに基づいて
基準電圧設定器37から最適基準電圧設定値Vsa
若しくはVsuを出力させるための制御信号SG5
を出力するとともに、トランジスタTrをオン若
しくはオフさせ、かつ、減衰器34の減衰量をこ
の場合の減衰量となるように制御信号SG3を出
力する。
Then, when the adjustment work in this case is completed and the operator guides the work cloth 1 to the sewing position and starts sewing, the CPU 43 changes from the sensitivity adjustment mode to the work cloth detection mode. The CPU 43 is the RAM 4
Optimal reference voltage value Vsa or Vsu stored in 5
Then, data on the amount of attenuation of the attenuator 34 when the transistor Tr is turned on and off is read out. Based on this data, the CPU 43 outputs the optimum reference voltage setting value Vsa from the reference voltage setter 37.
Or control signal SG5 for outputting Vsu
At the same time, it turns on or off the transistor Tr and outputs a control signal SG3 so that the attenuation amount of the attenuator 34 becomes the attenuation amount in this case.

そして、検出器が第1図Bに示す加工布1を検
出ているときには投光素子17からの光は加工布
1を通つて受光素子26に到達するため、受光素
子26が直接投光素子17から光を受光して感度
調整処理動作を行つたときより投光素子17が受
光する量は少なくなる。従つて、減衰出力電圧V
2は最適基準電圧設定値Vsa若しくはVsuより遥
かに小さくなることからコンパレータ36の検出
信号SG4はHレベルとなり、このHレベルに基
づいてCPU43は今加工布1が受光素子26上
を通過していることを判断する。
When the detector is detecting the work cloth 1 shown in FIG. 1B, the light from the light emitting element 17 passes through the work cloth 1 and reaches the light receiving element 26. The amount of light received by the light projecting element 17 is smaller than when the sensitivity adjustment processing operation is performed by receiving light from the light source. Therefore, the attenuated output voltage V
2 is much smaller than the optimum reference voltage setting value Vsa or Vsu, the detection signal SG4 of the comparator 36 becomes H level, and based on this H level, the CPU 43 determines that the work cloth 1 is currently passing over the light receiving element 26. judge things.

縫製が進み受光素子26上に加工布1の加工布
終了端が来た時、投光素子17の光は直接受光素
子26に到達するため、前記加工布1なしで行つ
た感度調整処理動作のときと同じ受光量を受光素
子26が受光することになる。従つて、減衰出力
電圧V2は最適基準電圧設定値Vsa若しくはVsu
より大きくなることからコンパレータ36の検出
信号SG4はLレベルとなり、このLレベルに基
づいてCPU43は今加工布終了端が受光素子2
6上を通過していることを判断する。
As the sewing progresses and the end of the work cloth 1 reaches the light receiving element 26, the light from the light emitting element 17 reaches the light receiving element 26 directly. The light receiving element 26 receives the same amount of light as before. Therefore, the attenuated output voltage V2 is equal to the optimum reference voltage setting value Vsa or Vsu.
Since it becomes larger, the detection signal SG4 of the comparator 36 becomes L level, and based on this L level, the CPU 43 determines whether the end of the currently processed cloth is the light receiving element 2.
6. Judge that it has passed above 6.

尚、この発明は前記実施例に限定されるもので
はなく、例えば、前記実施例ではステツプ8の処
理動作で減衰器34の減衰量を小さくした後、ス
テツプ11の処理動作で基準電圧設定器37から出
力される基準電圧Vsを下げることにより、感度
調整を行つたが、これを第10図に示すように基
準電圧Vsは常に一定状態に保持させ、ステツプ
5〜ステツプ8の処理動作で基準電圧Vsより大
きくなつた減衰出力電圧V2を次に基準電圧Vs
より小さくなるまで可変減衰器34の減衰量を大
きくして最適基準電圧設定値Vsa若しくはVsu及
び減衰量を設定するようにして実施してもよい。
この場合、第9図に示すCPU43のステツプ11
の処理動作は第11図に示すように可変減衰器3
4の減衰量を1段大きくするステツプ11の処理動
作となる。
Note that the present invention is not limited to the above-mentioned embodiment. For example, in the above-described embodiment, after the attenuation amount of the attenuator 34 is reduced in the processing operation of step 8, the reference voltage setter 37 is reduced in the processing operation of step 11. Sensitivity was adjusted by lowering the reference voltage Vs output from the sensor, but as shown in Figure 10, the reference voltage Vs is always kept constant, and the processing operations in steps 5 to 8 lower the reference voltage. The attenuated output voltage V2, which has become larger than Vs, is then applied to the reference voltage Vs.
The optimum reference voltage setting value Vsa or Vsu and the attenuation amount may be set by increasing the attenuation amount of the variable attenuator 34 until it becomes smaller.
In this case, step 11 of the CPU 43 shown in FIG.
The processing operation is performed by the variable attenuator 3 as shown in FIG.
The processing operation of step 11 is to increase the attenuation amount of step 4 by one step.

発明の効果 以上詳述したように、この発明は加工布の光の
透過量を検知する検知手段と、その検知手段の検
知信号に基づきその加工布の厚みを検出する検出
手段とを備えた検出器において、前記検出手段か
らの検出信号に基づき前記加工布に対する投光素
子からの最適な投光量を判定する最適投光量判定
手段と、その判定手段からの判定信号に基づき投
光素子からの投光量を調節する投光量調節手段
と、前記判定手段からの判定信号に基づき前記加
工布に対する最適投光量に応じ受光素子の受光量
基準値を設定する受光量基準値設定手段と、を備
えたことにより、加工布の厚さが変化しても、そ
の都度、当該厚さに応じた最適な検出感度、すな
わち当該厚さに対する最適な投光量を判定しその
投光量に調節するとともに、その最適投光量に対
応する受光基準値を自動的に設定することがで
き、布厚変化に対する調整作業の労力を軽減する
ことができる。
Effects of the Invention As described in detail above, the present invention has a detection means that detects the amount of light transmitted through a work cloth, and a detection means that detects the thickness of the work cloth based on a detection signal from the detection means. an optimum light emitting amount determining means for determining an optimum amount of light emitted from the light emitting element to the work cloth based on a detection signal from the detecting means; A light projection amount adjusting means for adjusting the light amount, and a light reception amount reference value setting means for setting a light reception amount reference value of the light receiving element according to the optimum light projection amount to the work cloth based on the determination signal from the determination means. Therefore, even if the thickness of the work cloth changes, the optimum detection sensitivity according to the thickness, that is, the optimum light emission amount for the thickness is determined each time, and the light emission amount is adjusted to that value. It is possible to automatically set a light reception reference value corresponding to the amount of light, and it is possible to reduce the labor required for adjusting work for changes in cloth thickness.

【図面の簡単な説明】[Brief explanation of drawings]

第1図A、Bは加工布の一部破断正面図及び側
断面図、第2図A、Bは加工布とポケツト布片の
一部破断正面図及び側断面図、第3図はミシンの
側面図、第4図は投光素子と受光素子の取り付け
状態を示す正面図、第5図はミシンのベツト部の
一部平面図、第6図は検出器の電気ブロツク回路
図、第7図はチヨツパ信号とパルス信号の出力波
形図、第8図は減衰出力電圧と基準電圧の関係を
示す図、第9図はCPUの処理動作を示すフロー
チヤート図、第10図はこの発明の別例を説明す
るための減衰出力電圧と基準電圧の関係を示す
図、第11図は同じくCPUの処理動作を示すフ
ローチヤート図である。 加工布1、ポケツト布片2、ミシンフレーム1
1、アーム部12、ベツト部13、投光素子1
7、受光素子26、可変減衰器34、コンパレー
タ36、基準電圧設定器37、感度調整スイツチ
41、中央処理装置(CPU)43。
Figures 1A and B are a partially cutaway front view and a side sectional view of the work cloth, Figures 2A and B are a partially cutaway front view and side sectional view of the workpiece cloth and pocket cloth, and Figure 3 is a view of the sewing machine. 4 is a front view showing how the light emitting element and light receiving element are attached; FIG. 5 is a partial plan view of the sewing machine bed; FIG. 6 is an electric block circuit diagram of the detector; and FIG. 7 is a side view. 8 is a diagram showing the output waveforms of the chopper signal and pulse signal, FIG. 8 is a diagram showing the relationship between the attenuated output voltage and the reference voltage, FIG. 9 is a flowchart showing the processing operation of the CPU, and FIG. 10 is another example of the present invention. FIG. 11 is a flowchart showing the processing operation of the CPU. Processing cloth 1, pocket cloth piece 2, sewing machine frame 1
1, arm part 12, bed part 13, light emitting element 1
7, light receiving element 26, variable attenuator 34, comparator 36, reference voltage setter 37, sensitivity adjustment switch 41, central processing unit (CPU) 43.

Claims (1)

【特許請求の範囲】 1 投光素子17と受光素子26とからなり前記
両者17,26間に導入される加工布1の光の透
過量を検知する検知手段26と、その検知手段の
検知信号に基づきその加工布1の厚みを検出する
検出手段43;ステツプ9)とを備えた検出器に
おいて、 前記検出手段43からの検出信号に基づき前記
加工布1に対する投光素子17からの最適な投光
量を判定する最適投光量判定手段(Tr,R1,
R2,43;ステツプ2,ステツプ10)と、 その判定手段43からの判定信号に基づき投光
素子17からの投光量を調節する投光量調節手段
(Tr,R1,R2,43;ステツプ2,ステツプ
10)と、 前記判定手段43からの判定信号に基づき前記
加工布1に対する最適投光量に応じた受光素子2
6の受光量基準値を設定する受光量基準値設定手
段43;ステツプ15,ステツプ16と、 を備えたことを特徴とする検出器のための自動感
度調整装置。
[Scope of Claims] 1. A detection means 26 which is composed of a light projecting element 17 and a light receiving element 26 and detects the amount of light transmitted through the work cloth 1 introduced between the two 17 and 26, and a detection signal from the detection means. Detection means 43 for detecting the thickness of the work cloth 1 based on the thickness of the work cloth 1; step 9), the optimum projection from the light emitting element 17 to the work cloth 1 is determined based on the detection signal from the detection means 43. Optimal light projection amount determining means (Tr, R1,
R2, 43; Step 2, Step 10); and a light emitting amount adjusting means (Tr, R1, R2, 43; Step 2, Step 10) that adjusts the amount of light emitted from the light emitting element 17 based on the determination signal from the determining means 43.
10), and a light receiving element 2 according to the optimum amount of light projected onto the work cloth 1 based on the determination signal from the determination means 43.
6. An automatic sensitivity adjustment device for a detector, comprising: a received light amount reference value setting means 43 for setting the received light amount reference value of step 6; step 15, step 16.
JP58193188A 1983-10-15 1983-10-15 Automatic sensitivity adjustor for detector Granted JPS6085385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58193188A JPS6085385A (en) 1983-10-15 1983-10-15 Automatic sensitivity adjustor for detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58193188A JPS6085385A (en) 1983-10-15 1983-10-15 Automatic sensitivity adjustor for detector

Publications (2)

Publication Number Publication Date
JPS6085385A JPS6085385A (en) 1985-05-14
JPH0379674B2 true JPH0379674B2 (en) 1991-12-19

Family

ID=16303765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58193188A Granted JPS6085385A (en) 1983-10-15 1983-10-15 Automatic sensitivity adjustor for detector

Country Status (1)

Country Link
JP (1) JPS6085385A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2572414B2 (en) * 1988-03-02 1997-01-16 株式会社日立製作所 Light emission amount adjustment method for paper sheet detection device
JP2641591B2 (en) * 1990-03-22 1997-08-13 日本精密電気株式会社 Thin plate overlap detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713327A (en) * 1980-06-27 1982-01-23 Laurel Bank Mach Co Ltd Optical detector

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162578U (en) * 1981-04-07 1982-10-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713327A (en) * 1980-06-27 1982-01-23 Laurel Bank Mach Co Ltd Optical detector

Also Published As

Publication number Publication date
JPS6085385A (en) 1985-05-14

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