JPH0377313A - Chemical vapor growth apparatus - Google Patents

Abstract

PURPOSE:To prevent a reaction product from adhering to a main face of a semiconductor wafer at a gas substitution operation and to shorten a time spent for a substitution operation of a purge gas for the reaction product by a method wherein a shutter having a shutoff face with which the main face of the semiconductor wafer is covered is installed between a gas head and a heating stage so as to be freely advanced and retreated. CONSTITUTION:A film is formed by supplying reaction gases A1, A2 to a semiconductor wafer 6 on a heating stage 3 from a gas head 5. During this process, the semiconductor wafer 6 is heated to a prescribed temperature by using the heating stage 3; a shutter 14 is housed inside a shutter container 11; consequently, one part of the reaction gases is reacted chemically on a main face of the semiconductor wafer 6 and a product is deposited. On the other hand, a substitution operation of a purge gas B for the reaction gases is executed by blowing off the purge gas B in large quantities to the semiconductor wafer 6 from blowoff ports 5a, 5b of the gas head 5 after the film has been formed. During this process, the shutter 14 is advanced between the semiconductor wafer 6 on the gas head 5 and the heating stage 3. As a result, a reaction product C of the blowoff ports 5a, 5b is shut off by means of the shutter 14.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a chemical vapor deposition apparatus used in a semiconductor manufacturing process.

[Conventional technology]

In general, various types of chemical vapor deposition apparatuses of this kind are known, and among them, for example, there is a chemical vapor deposition apparatus as shown in FIG. This will be explained based on the figure. In the figure, a reaction chamber 3 as a reaction container having a plurality of discharge ports 2 opening inward and outward is indicated by the reference numeral 1, and a heater is provided inside the reaction chamber l. a heating stage 4 for holding a wafer, and a gas head having a number of gas outlets 5a and 5b provided at a predetermined interval from the heating stage 3 of a cigarette lighter and supplying a reactive gas to the main surface of the semiconductor wafer 6; It is. Note that symbols B and C in the figure represent the purge gas and reaction products.

Film formation using the chemical vapor deposition apparatus with the tank bottom is performed by supplying a reaction gas from the gas hood 5 to the semiconductor wafer 6 on the heating stage 3. At this time, since the semiconductor wafer 6 is heated to a predetermined temperature by the heating stage 3, a part of the reaction gas undergoes a chemical reaction on the main surface of the semiconductor wafer 6, and a product is deposited.

By the way, in this type of chemical vapor deposition apparatus, when the semiconductor wafer 6 after film formation is carried out from inside the reaction chamber 1 to the outside, it is necessary to prevent toxic reaction gas from being discharged from the carrying out port. Therefore, a purge gas B using an inert gas such as N1 is supplied into the reaction chamber 1 from the outlet ports 5a and 5b of the gas supply 5 to replace the reaction gas.

[Problem to be solved by the invention]

However, in the conventional chemical vapor deposition apparatus, a large amount of purge gas B is used because it is necessary to remove the reaction product C adhering to the blow-off ports 5a and 5b of the gas head 5. As a result, air outlets 5a, 5 are formed on the main surface of the semiconductor wafer 6.
The reaction product C of b is attached and good film formation is not carried out,
y′l;i, there was a problem that the reliability on the film decreased.

Therefore, it is possible to reduce the amount of purge gas B, but in this case, a large amount of time is required to replace the purge gas with the reaction product, which is disadvantageous in that the productivity in film formation decreases.

The present invention was made in view of the above circumstances, and the tc
The present invention provides a chemical vapor deposition apparatus that can improve reliability and productivity on WA.

[Means to solve the problem]

The chemical vapor deposition apparatus according to the present invention includes a reaction vessel having an outlet opening opening both inside and outside, a heating stage provided in the reaction vessel for holding a semiconductor wafer, and a semiconductor wafer on the heating stage and a predetermined position. The device is equipped with a gas head which is spaced apart from each other to supply gas, and a shutter having a shielding surface that covers the main surface of the semiconductor wafer is provided between the gas head and the heating stage so as to be movable forward and backward.

[For production]

In the present invention, a large amount of purge gas can be supplied to the shutter from the gas head after film formation.

〔Example〕

EMBODIMENT OF THE INVENTION Hereinafter, the structure etc. of this invention will be explained in detail by the Example shown in the figure.

FIG. 1 is a sectional view showing an embodiment of the chemical vapor deposition apparatus according to the present invention, and FIG. 2 is a bottom view showing a heating stage of the chemical vapor deposition apparatus according to the present invention.
Components that are the same as those in FIG. In the figure, what is designated by the reference numeral 11 is a shutter container having a shutter storage section 12 and a shutter insertion/extraction port 13, and is provided at a side portion of the reaction chamber 1. 14 is a shielding surface 14 that covers the main surface of the semiconductor wafer 6. a shutter having a shape that is movable forward and backward between the gas heater 5 and the heating stage 3;
Moreover, it is provided in the shutter storage section 12 of the shutter container 11 so as to be freely inserted and removed. Note that 15 is an air cylinder that drives the shutter 14, and 16 is a shutter feed rod that transmits the driving force of the air cylinder 15 to the shutter 14.

Film formation using the chemical vapor deposition apparatus configured as described above is performed by supplying reaction gases A, , A, from the gas head 5 to the semiconductor wafer 6 on the heating stage 3 . At this time, the semiconductor wafer 6 is heated to a predetermined temperature by the heating stage 3, and the shutter 1
Since the semiconductor wafer 4 is housed in the shutter container 11, a part of the reaction gas undergoes a chemical reaction on the main surface of the semiconductor wafer 6, and products are deposited.

On the other hand, the replacement of the purge gas B with the reactive gas is performed by blowing out a large amount of the purge gas B onto the semiconductor wafer 6 from the blow-off ports 5a and 5b of the gas heater 5 after film formation. At this time, as shown in FIGS. 3 and 4, the shank 14 advances between the semiconductor wafer 6 on the gas heater 5 and the heating stage 3, so that the reaction products C at the blow-off ports 5a and 5b are It is blocked by the shutter 14.

Therefore, in this embodiment, it is possible to prevent the reaction product C from adhering to the main surface of the semiconductor wafer 6 during gas replacement, and also to prevent the reaction product C from adhering to the main surface of the semiconductor wafer 6.
The time spent replacing item C can be reduced.

In this embodiment, an example was shown in which the shutter 14 moved forward and backward between the gas head 5 and the heating stage 3, but the present invention is not limited to this. The vibrator 21 may be provided with a function of vibrating the shutter 14 inside the shutter container 11, and in this case, the reaction product C adhering to the shielding surface 14a of the shutter 14 can be removed.

In addition, as shown in FIG.
The reaction product C attached to the shielding surface 14'a of No. 4 can be removed.

Further, as shown in FIG. 7, a brush 25 driven by an air cylinder 24 may be provided in the shutter insertion/extraction port 13 to remove the reaction product C in the same manner as in the embodiment.

Furthermore, as shown in FIG. 8, a water conduit 2 through which cooling water circulates
6 in the shutter 14, and set the temperature of the shutter 14 lower than the temperature in the anti-ventricular chamber 1, so that the reaction product C is actively deposited in the reaction chamber 1 (thermophoresis phenomenon). In addition, as shown in FIG. 9, a suction port 27 opened in the shielding surface 14a of the shutter 14 is provided, and the reaction product C is actively sucked into the passage 28 from the suction port 27. can be removed.

Incidentally, the reaction chamber chamber 1 in the present invention. Heating stage 3. Gas head 5. The shape of the shutter container 11 and the shutter 14 and the discharge port 2. Of course, the opening shape of the shank insertion/extraction port 13, its setting position, etc. are not limited to the embodiments described above.

〔Effect of the invention〕

As explained above, according to the present invention, there is provided a reaction vessel having a discharge port opening inward and outward, a heating stage provided in the reaction vessel for holding a semiconductor wafer, and a predetermined interval between the semiconductor wafer on the heating stage and the heating stage. A shutter with a shielding surface that covers the main surface of the semiconductor wafer is provided between the gas head and the heating stage so that it can move forward and backward. A large amount of purge gas can be supplied from the head. Therefore, it is possible to prevent the reaction products from adhering to the main surface of the semiconductor wafer during gas replacement, and it is also possible to shorten the time spent replacing the purge gas and the reaction products, improving reliability in film formation and productivity. can improve sex.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing an embodiment of a chemical vapor deposition apparatus according to the present invention, FIG. 2 is a bottom view showing a heating stage of the chemical vapor deposition apparatus according to the present invention, and FIGS. 3 and 4 10 is a sectional view and a bottom view showing the state when purge gas and reaction gas are replaced, FIGS. 5 to 9 are sectional views showing main parts in other embodiments, and FIG. 1O is a conventional chemical vapor deposition apparatus. FIG. 1...Reaction chamber, 2...Exhaust port, 3...
... Heating stage, 5... Gas head, 5a,
5b...Gas outlet, 6...Semiconductor wafer, 1
4... Shutter, 14a... Shielding surface/ Agent Masuo Oiwa Figure 5 Figure Figure Figure

Claims (1)

[Claims] A reaction vessel having a discharge port opening inward and outward, a heating stage disposed within the reaction vessel to hold a semiconductor wafer, and a gas head disposed at a predetermined distance from the semiconductor wafer on the heating stage for supplying gas. A chemical vapor deposition apparatus characterized in that a shutter having a shielding surface that covers the main surface of the semiconductor wafer is provided between the gas head and the heating stage so as to be movable forward and backward.