JPH0365627A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH0365627A JPH0365627A JP20065889A JP20065889A JPH0365627A JP H0365627 A JPH0365627 A JP H0365627A JP 20065889 A JP20065889 A JP 20065889A JP 20065889 A JP20065889 A JP 20065889A JP H0365627 A JPH0365627 A JP H0365627A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- ring
- die
- bonding
- die pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 5
- 229920002050 silicone resin Polymers 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000644 propagated effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は、ダイアフラム部を有する半導体素子を使っ
た半導体圧力センサーに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor pressure sensor using a semiconductor element having a diaphragm portion.
[従来の技術]
第6図は従来の2つの感圧面を有する半導体素子を有す
る半導体圧力センサーを示す断面図、第7図は第6図の
圧力センサーにおける一つの半導体素子とその周辺を示
す拡大断面図である。図において、(1) 、 (la
) 、 (lb)は感圧面を有する半導体素子で、ダイ
アフラム部(2)を有している。[Prior Art] Fig. 6 is a sectional view showing a conventional semiconductor pressure sensor having a semiconductor element having two pressure-sensitive surfaces, and Fig. 7 is an enlarged view showing one semiconductor element and its surroundings in the pressure sensor of Fig. 6. FIG. In the figure, (1), (la
), (lb) is a semiconductor element having a pressure-sensitive surface, and has a diaphragm part (2).
(12)はフレームあるいは配線板で、金属細線(4)
で半導体素子(1) 、 (la) 、 (lb)と電
気的接続がなされる。(5a) 、 (5b)は半導体
素子(1a) 、 (tb)の表面側へ設けられたキャ
ビティーで、検出孔(6a) 、 (6b)とキャビテ
ィー (5b) 、 (5a)はそれぞれ連絡路(7a
) 、 (7b)で通じている。従って検出孔(6a)
、連絡路(7a)、キャビティ(5b)と検出孔(6b
)、連絡路(7b)、キャビティ(5a)はそれぞれ同
じ圧力になっており又、互いには別の空間となっている
。(8)は半導体素子(1) 、 (la) 、 (l
b)を納め、ガス等の流路を有するケースであり、検出
孔(6a) 、 (6b)より外部の異なる圧力を有す
るガス又は流体(9a) 、 (!lb)を半導体素子
(la) 、 (lb)の上下の面へ導く。(10)
は半導体素子(1)をダイパッド部(3a〉にダイボン
ドする為のダイボンド用接合材、(11)はフレームあ
るいは配線基板(12)をケース(8)に固定するため
のフレーム接合材である。(12) is the frame or wiring board, and the thin metal wire (4)
Electrical connections are made with the semiconductor elements (1), (la), and (lb). (5a) and (5b) are cavities provided on the surface side of the semiconductor elements (1a) and (tb), and the detection holes (6a) and (6b) are connected to the cavities (5b) and (5a), respectively. Road (7a
) and (7b). Therefore, the detection hole (6a)
, communication path (7a), cavity (5b) and detection hole (6b
), the communication path (7b), and the cavity (5a) have the same pressure, and are separate spaces from each other. (8) is the semiconductor element (1), (la), (l
b) and has a flow path for gas, etc., and gases or fluids (9a), (!lb) having different external pressures from the detection holes (6a), (6b) are connected to the semiconductor device (la), (lb) to the upper and lower surfaces. (10)
1 is a die bonding material for die bonding the semiconductor element (1) to the die pad portion (3a), and 11 is a frame bonding material for fixing the frame or wiring board (12) to the case (8).
次に動作について説明する。第6図において圧力が異な
る2つのガス又は流体(9a) 、 (9b)が検出孔
(6a) 、 (6b)より流入し、ガス又は流体(9
a)の方は半導体素子(1a)の裏面と、連絡路(7a
)キャビティー(5b)を通って半導体素子(1b)の
表面とに圧力がかかり、一方ガス又は流体(9b)は、
同様に半導体素子(ib)の裏面と、半導体素子(la
)の表面とに圧力を加える。ここで例えばガス又は流体
(9a)の圧力がガス又は流体(9b)の圧力より大で
ある場合、半導体素子(1a)のダイアフラム部(2)
は上側に凸となり、半導体素子(1b)のダイアフラム
部(2)は下側に凸となる。このダイアフラム部(2)
の変形によって半導体素子(la) 、 (lb)はあ
る出力信号を出すがそれは変形量や変形の方向(上に凸
又は下に凸といった状態)によって出力信号は決まって
くる。半導体素子(la)又は(1b)の1個だけを使
った場合は上に凸又は下に凸の分だけの出力しかとれな
いが、2個使用することで2個の異なる出力の和を取る
ことで、大きい出力を得ることができ、外部の振動等に
よるノイズに対して強い圧力センサーとなる。Next, the operation will be explained. In FIG. 6, two gases or fluids (9a) and (9b) with different pressures flow through the detection holes (6a) and (6b), and the gas or fluid (9
In case a), the back side of the semiconductor element (1a) and the communication path (7a)
) through the cavity (5b) to the surface of the semiconductor element (1b), while the gas or fluid (9b)
Similarly, the back side of the semiconductor element (ib) and the back side of the semiconductor element (la
) and apply pressure to the surface. Here, for example, if the pressure of the gas or fluid (9a) is higher than the pressure of the gas or fluid (9b), the diaphragm portion (2) of the semiconductor element (1a)
is convex upward, and the diaphragm portion (2) of the semiconductor element (1b) is convex downward. This diaphragm part (2)
Due to the deformation of the semiconductor elements (la) and (lb), the semiconductor elements (la) and (lb) output a certain output signal, but the output signal is determined by the amount of deformation and the direction of deformation (convex upward or convex downward). If only one semiconductor element (la) or (1b) is used, only the output corresponding to the upward or downward convexity can be obtained, but by using two, the sum of two different outputs can be obtained. This makes it possible to obtain a large output and make the pressure sensor resistant to noise caused by external vibrations.
又、第7図において半導体素子(1)はダイパッド部(
3a)上にダイボンド用接合材(10)で取り付C−)
られているが、このダイボンド用接合材(10)には一
般にシリコーン樹脂等の柔かい材料で取り付けられてい
る。しかし、ダイボンド用接合材(10)の厚みが数1
0μmしかない為、フレームあるいは配線基板(12)
の歪が半導体素子(1)のダイアフラム部(2)に影響
を与える。フレームあるいは配線基板(12〉、特にダ
イパッド部(3a〉の歪の発生原因として、フレームあ
るいは配線基板(12)をケース(8)に取り付ける時
の接合材の硬化の為の熱による膨張・収縮、あるいは半
導体圧力センサーの使用環境温度でのケース(8)とフ
レームあるいは配線基板(12)の線膨張係数の違いに
より生じる歪などが考えられる。In addition, in FIG. 7, the semiconductor element (1) has a die pad part (
3a) Attach die bonding material (10) on top C-)
However, this die-bonding bonding material (10) is generally attached using a soft material such as silicone resin. However, the thickness of the bonding material (10) for die bonding is several 1
Frame or wiring board (12) because it is only 0μm
The strain affects the diaphragm portion (2) of the semiconductor element (1). The causes of distortion in the frame or wiring board (12), especially in the die pad part (3a), are expansion and contraction due to heat due to hardening of the bonding material when attaching the frame or wiring board (12) to the case (8). Another possibility is distortion caused by a difference in linear expansion coefficient between the case (8) and the frame or wiring board (12) at the operating temperature of the semiconductor pressure sensor.
[発明が解決しようとする課題]
従来の半導体圧力センサーは以上のように構成されてい
るので、使用環境の影響、特に温度や、半導体圧力セン
サーの組立工程での熱の影響により、フレームあるいは
配線基板を介して半導体素子のダイアフラム部へ歪が生
じ、正確な圧力を測定できなくなるという問題点があっ
た。[Problem to be Solved by the Invention] Since the conventional semiconductor pressure sensor is configured as described above, the frame or wiring may be damaged due to the influence of the usage environment, especially the temperature and the influence of heat during the assembly process of the semiconductor pressure sensor. There is a problem in that distortion occurs in the diaphragm portion of the semiconductor element through the substrate, making it impossible to accurately measure pressure.
この発明は上記のような問題点を解消するためになされ
たもので、フレームあるいは配線基板の歪の影響が半導
体素子へ伝わらない様にし、正確な圧力が測定できる様
な半導体圧力センサーを得ることを目的とする。This invention was made in order to solve the above-mentioned problems, and it is an object of the present invention to obtain a semiconductor pressure sensor that can prevent the influence of distortion of the frame or wiring board from being transmitted to the semiconductor element and can accurately measure pressure. With the goal.
[課題を解決するための手段]
この発明に係る半導体圧力センサーは、半導体素子のダ
イボンディング時に、例えばシリコーン樹脂の様な柔ら
かい樹脂でできたリングをダイパッド部と半導体素子と
の間に設置して、このリングを同時にダイボンドをする
ものである。又、このリングの形成の為に、リング形成
用の枠をダイパッド上に設け、これにダイボンド樹脂を
流し込んで半導体素子をダイボンドするものである。[Means for Solving the Problems] A semiconductor pressure sensor according to the present invention includes a ring made of soft resin such as silicone resin that is installed between a die pad portion and a semiconductor element during die bonding of the semiconductor element. , this ring is die-bonded at the same time. In order to form this ring, a frame for ring formation is provided on the die pad, die bonding resin is poured into this, and the semiconductor element is die bonded.
[作用〕
この発明におけるリングはゴムの様な柔軟性を有し、ダ
イボンド時の半導体素子とダイパッド部間に従来の接合
時のシリコーン樹脂等の厚みをより厚くすることができ
るので、フレームあるいは配線基板のダイパッド部の歪
がこのリング部で吸収され半導体素子へ歪が伝わらなく
なる。[Function] The ring in this invention has rubber-like flexibility, and the thickness of the silicone resin used in conventional bonding between the semiconductor element and the die pad during die bonding can be made thicker. Strain in the die pad portion of the substrate is absorbed by this ring portion, and the strain is no longer transmitted to the semiconductor element.
[実施例]
以下、この発明の一実施例を図により説明する。第1図
は半導体圧力センサーにおける半導体素子とその周辺を
示す断面図、第2図は第1図に示す^・Aにおける断面
図、第3図はこの発明の他の実施例による半導体圧力セ
ンサーにおける半導体素子とその周辺を示す断面図、第
4図は第3図に示すB−8における断面図、第5図はN
4図に示すC−Cにおける断面図である。図において(
1) 、 (2) 。[Example] Hereinafter, an example of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing a semiconductor element and its surroundings in a semiconductor pressure sensor, FIG. 2 is a sectional view at ^ A shown in FIG. 1, and FIG. 3 is a sectional view of a semiconductor pressure sensor according to another embodiment of the present invention. A cross-sectional view showing a semiconductor element and its surroundings, FIG. 4 is a cross-sectional view at B-8 shown in FIG. 3, and FIG. 5 is a cross-sectional view at N-8 shown in FIG.
FIG. 4 is a sectional view taken along line CC shown in FIG. 4; In the figure (
1), (2).
(3a) 、 (4) 、 (8) 、 (10) 、
(11)は第6図及び第7図の従来例に示したものと
同等であるので説明を省略する。(20)はリングを示
し、半導体素子(1)とダイパッド部(3a)との間に
設置され、ダイボンド時にダイボンド用接合材(10)
により半導体素子(1)、リング(20)、ダイパッド
部(3a)とが接合される。(3a), (4), (8), (10),
Since (11) is the same as that shown in the conventional example of FIGS. 6 and 7, the explanation will be omitted. (20) indicates a ring, which is installed between the semiconductor element (1) and the die pad part (3a), and is used as a bonding material (10) for die bonding during die bonding.
The semiconductor element (1), ring (20), and die pad portion (3a) are bonded together.
次に動作について説明する。Next, the operation will be explained.
第1図において、ダイボンド時の接合部の厚みは、リン
グ(20)の厚みの分だけ厚くすることができ、リング
(20)自身及びダイボンド用接合材(10)に柔軟性
のあるシリコン樹脂やゴム材などを使うことで、半導体
圧力センサーの組立時や、使用環境温度でのダイパッド
部(3a)に生じる歪はリング(20)やダイボンド用
接合材(10)での変形により吸収されてしまい、半導
体素子(1)には歪の影響が伝わらない。接合部の厚み
は、一般に厚くなる程、ダイパッド部(3a)での歪は
この接合部で吸収され易い。したがってリング(20)
の形成の方法として第3図に示すように、リング形成用
枠(30)を用いることで、ダイパッド部(3a)と半
導体素子(1)の間にダイボンド用接合材(10)を兼
ねたリング(20)が形成でき、リング形成用枠(30
)の厚みに応じた接合部の厚みを得ることができる。リ
ング形成用枠(30)は外枠(30a) 、内枠(30
b)及び架橋部(30c)より成る。In Fig. 1, the thickness of the joint during die bonding can be increased by the thickness of the ring (20), and the ring (20) itself and the die bonding material (10) are made of flexible silicone resin. By using a rubber material, etc., the distortion that occurs in the die pad part (3a) during assembly of the semiconductor pressure sensor or at the operating environment temperature is absorbed by the deformation of the ring (20) and the die bonding material (10). , the influence of strain is not transmitted to the semiconductor element (1). In general, the thicker the joint, the easier it is for the strain at the die pad (3a) to be absorbed by this joint. Hence the ring (20)
As shown in FIG. 3, a ring which also serves as a bonding material for die bonding (10) is formed between the die pad part (3a) and the semiconductor element (1) by using a ring forming frame (30) as shown in FIG. (20) can be formed, and a ring forming frame (30) can be formed.
) The thickness of the joint can be obtained according to the thickness of the joint. The ring forming frame (30) has an outer frame (30a) and an inner frame (30
b) and a crosslinked portion (30c).
なお上記2つの実施例において、いづれもリング(20
)又はリング形成用枠(30)をダイパッド部(3a)
上に置き、ダイボンド時に、ダイボンド用接合材(10
)により同時に接合する場合を示したが、リング(20
)又はリング形成用枠(30)はあらかじめダイパッド
部(3a)上に形成されていても良い。In addition, in the above two embodiments, both rings (20
) or the ring forming frame (30) to the die pad part (3a)
Place the die bonding material (10
), but the ring (20
) or the ring forming frame (30) may be formed on the die pad portion (3a) in advance.
又、リング(20)又はリング形成用枠(30)の形は
どの様な形状でも良く、複数個の部分で形成されても良
く、ダイボンド後に、半導体素子(1)の上面側と下面
側とが別の空間を形成する様に、半導体素子(+)とダ
イパッド部(3a〉との間がリング状にダイボンドされ
ておれば上記実施例と同様の効果を奏する。Further, the ring (20) or the ring forming frame (30) may have any shape, and may be formed from a plurality of parts. If the semiconductor element (+) and the die pad portion (3a) are die-bonded in a ring shape so as to form a separate space, the same effect as in the above embodiment can be obtained.
[発明の効果]
以上のように、この発明によれば、柔らかいリングを半
導体素子とダイパッド部間に形成し、しかもこのリング
がある程度厚みをもつことができるようにしたため、半
導体圧力センサー組立時や、使用環境により生じるダイ
パッド部の歪をこのリング部の変形で吸収し、半導体素
子へは歪が伝わらない様にしたため、より正確な圧力が
測定できるという効果がある。[Effects of the Invention] As described above, according to the present invention, a soft ring is formed between the semiconductor element and the die pad portion, and this ring can have a certain thickness, which makes it easier to assemble the semiconductor pressure sensor. The deformation of the ring absorbs the distortion of the die pad caused by the environment of use, preventing the distortion from being transmitted to the semiconductor element, which has the effect of allowing more accurate pressure measurements.
第1図はこの発明の一実施例による半導体圧力センサー
の半導体素子及びその周辺の構造を示す断面図、第2図
は、第1図に示すA−Aにおける断面図、第3図はこの
発明の他の実施例による半導体圧力センサーの半導体素
子及びその周辺の構造を示す断面図、第4図は第3図に
示すB−Bにおける断面図、第5図は第4図に示すC−
cにおける断面図、第6図は従来の2つの感圧面を有す
る半導体素子を有する半導体圧力センサーの構造を示す
断面図、第7図は第6図の圧力センサーにおける一つの
半導体素子とその周辺を示す拡大断面図である。
図において、(1)は半導体素子、(2)はダイアフラ
ム部、(3)はフレーム、(3a)はダイパッド部、(
4)は金属細線、(8)はケース、(10)はダイボン
ド用接合材、(11)はフレーム接合材、(20)はリ
ング、(30)はリング形成用枠、(30a)は外枠、
(30b)は内枠、(30c)は架橋部である。なお、
図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a cross-sectional view showing a semiconductor element and its surrounding structure of a semiconductor pressure sensor according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line A-A shown in FIG. 1, and FIG. FIG. 4 is a cross-sectional view taken along line BB shown in FIG. 3, and FIG. 5 is taken along line C-- shown in FIG. 4.
6 is a sectional view showing the structure of a conventional semiconductor pressure sensor having a semiconductor element having two pressure-sensitive surfaces, and FIG. 7 is a sectional view showing one semiconductor element and its surroundings in the pressure sensor of FIG. 6. FIG. In the figure, (1) is a semiconductor element, (2) is a diaphragm part, (3) is a frame, (3a) is a die pad part, (
4) is a thin metal wire, (8) is a case, (10) is a bonding material for die bonding, (11) is a frame bonding material, (20) is a ring, (30) is a ring forming frame, (30a) is an outer frame ,
(30b) is an inner frame, and (30c) is a bridge portion. In addition,
In the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
圧力センサーにおいてダイパッド部に柔らかいリング状
の樹脂部を設け、その上に半導体素子を置き柔軟な樹脂
でダイボンドしたことを特徴とする半導体圧力センサー
。A semiconductor pressure sensor using a semiconductor element having a diaphragm part, characterized in that a soft ring-shaped resin part is provided in the die pad part, the semiconductor element is placed on top of the soft ring-shaped resin part, and the semiconductor element is die-bonded with the flexible resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20065889A JPH0365627A (en) | 1989-08-02 | 1989-08-02 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20065889A JPH0365627A (en) | 1989-08-02 | 1989-08-02 | Semiconductor pressure sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0365627A true JPH0365627A (en) | 1991-03-20 |
Family
ID=16428070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20065889A Pending JPH0365627A (en) | 1989-08-02 | 1989-08-02 | Semiconductor pressure sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0365627A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6049120A (en) * | 1997-01-14 | 2000-04-11 | Mitsubishi Denki Kabushiki Kaisha | Thermal-stress-resistant semiconductor sensor |
JP2012091243A (en) * | 2010-10-25 | 2012-05-17 | Dainippon Printing Co Ltd | Mems device and method for manufacturing the same |
US20120144921A1 (en) * | 2010-12-10 | 2012-06-14 | Honeywell International Inc. | Increased sensor die adhesion |
JP2019158622A (en) * | 2018-03-13 | 2019-09-19 | 富士電機株式会社 | Sensor device |
-
1989
- 1989-08-02 JP JP20065889A patent/JPH0365627A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6049120A (en) * | 1997-01-14 | 2000-04-11 | Mitsubishi Denki Kabushiki Kaisha | Thermal-stress-resistant semiconductor sensor |
JP2012091243A (en) * | 2010-10-25 | 2012-05-17 | Dainippon Printing Co Ltd | Mems device and method for manufacturing the same |
US20120144921A1 (en) * | 2010-12-10 | 2012-06-14 | Honeywell International Inc. | Increased sensor die adhesion |
US8375799B2 (en) * | 2010-12-10 | 2013-02-19 | Honeywell International Inc. | Increased sensor die adhesion |
JP2019158622A (en) * | 2018-03-13 | 2019-09-19 | 富士電機株式会社 | Sensor device |
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