JPH0359144B2 - - Google Patents
Info
- Publication number
- JPH0359144B2 JPH0359144B2 JP60024165A JP2416585A JPH0359144B2 JP H0359144 B2 JPH0359144 B2 JP H0359144B2 JP 60024165 A JP60024165 A JP 60024165A JP 2416585 A JP2416585 A JP 2416585A JP H0359144 B2 JPH0359144 B2 JP H0359144B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- aluminum
- base material
- metal
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910000838 Al alloy Inorganic materials 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 229910001507 metal halide Inorganic materials 0.000 claims description 10
- 150000005309 metal halides Chemical class 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- -1 fluorine ions Chemical class 0.000 claims description 6
- 238000006467 substitution reaction Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 238000009792 diffusion process Methods 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 5
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 5
- 229940045803 cuprous chloride Drugs 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000005211 surface analysis Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229940099259 vaseline Drugs 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は金属に異種金属を被覆する方法に関
し、置換反応と拡散反応とより成る乾式の異種金
属被覆をシリコン含有アルミニウム合金に容易に
施す方法を提供するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for coating a metal with a dissimilar metal, and a method for easily applying a dry dissimilar metal coating to a silicon-containing aluminum alloy using a substitution reaction and a diffusion reaction. It provides:
（従来の技術）
従来、金属に異種金属を被覆する方法として、
例えばアルミニウムおよびアルミニウム合金母材
の表面に塩化第１銅を接触させ、加熱によつて塩
化第１銅を還元して該母材表面にアルミニウムと
銅の相互拡散層と銅被覆層を得る方法が公知であ
る。(Prior art) Conventionally, as a method of coating metal with dissimilar metals,
For example, there is a method in which cuprous chloride is brought into contact with the surface of an aluminum or aluminum alloy base material, and the cuprous chloride is reduced by heating to obtain an interdiffused layer of aluminum and copper and a copper coating layer on the surface of the base material. It is publicly known.
その内容は、特公昭59−7786号によくまとめら
れており、ハロゲン化金属を供給する方法によつ
て、ガス法、浸漬法、散布法および塗布法に大別
される。 The contents are well summarized in Japanese Patent Publication No. 59-7786, and the method is roughly divided into gas method, dipping method, spraying method, and coating method depending on the method of supplying the metal halide.
（発明が解決しようとする問題点）
前記異種金属被覆法の原理は、次式で例示され
る置換反応によつてハロゲン化金属を還元し、
Al＋3CuCl→AlCl3＋3Cu ……(1)
しかるのちアルミニウム原子と還元析出した異
種金属原子（(1)式では銅）の相互拡散により、厚
さ数μｍの異種金属とアルミニウム母材とを拡散
層を介して強固に接合するものである。(Problems to be Solved by the Invention) The principle of the dissimilar metal coating method is to reduce the metal halide by a substitution reaction exemplified by the following formula, Al + 3CuCl → AlCl 3 + 3Cu ... (1) Then aluminum Through mutual diffusion of atoms and atoms of a different metal (copper in formula (1)) that are reduced and precipitated, a different metal with a thickness of several μm and an aluminum base material are firmly bonded via a diffusion layer.
強固な接合の条件としては、合金および金属間
化合物より成る拡散層が均一かつ薄くなければな
らない。 For strong bonding, the diffusion layer made of alloy and intermetallic compound must be uniform and thin.
シリコン含有アルミニウム合金を母材とする場
合は、従来、(1)式の反応と同時に、次の置換反応
が進行して、
Si＋4CuCl→SiCl4＋Cu ……(2)
異種金属被覆が可能であると考えられていた。 Conventionally, when using silicon-containing aluminum alloy as a base material, the following substitution reaction proceeds at the same time as the reaction in equation (1), resulting in Si+4CuCl→SiCl 4 +Cu...(2) It is possible to coat different metals. It was considered.
しかしながら、シリコン含有量が５％を越える
ようなアルミニウム合金を従来法で処理すると、
Al2CuとAl4Cu9より成る拡散層は不均一となり、
該合金表面が部分的に露出した被覆外観を呈する
ことが判明した。 However, when aluminum alloys with silicon content exceeding 5% are processed using conventional methods,
The diffusion layer consisting of Al 2 Cu and Al 4 Cu 9 becomes non-uniform,
It was found that the alloy surface exhibited a partially exposed coating appearance.
これは、アルミニウムおよびアルミニウム合金
が、空気中はもとより水中でも強固な酸化皮膜を
形成することに起因し、アルミニウムの酸化物が
ハロゲン化金属の高温接触によつて分解、除去で
きるのに対して、シリコン酸化物は除去できない
ためである。 This is because aluminum and aluminum alloys form a strong oxide film not only in the air but also in water, and while aluminum oxides can be decomposed and removed by high temperature contact with metal halides, This is because silicon oxide cannot be removed.
さらに、前記拡散反応は母材の深さ方向に進行
すると同時に、析出した異種金属の母材表面での
拡散を含んでいる。仮に(1)式の反応が被処理面全
域で起こらなくても、析出した異種金属は表面拡
散によつてひろがろうとする。 Further, the diffusion reaction progresses in the depth direction of the base material, and at the same time includes diffusion of the precipitated dissimilar metal on the surface of the base material. Even if the reaction of formula (1) does not occur over the entire surface to be treated, the precipitated dissimilar metal tends to spread through surface diffusion.
しかし、シリコンは拡散反応に関与せず、高濃
度のシリコンの存在は表面拡散にとつても有害と
なる。 However, silicon does not participate in diffusion reactions, and the presence of high concentrations of silicon is also detrimental to surface diffusion.
第２図は、12％のシリコンを含むアルミダイカ
スト（ADC−12）の面分析結果であり、白く見
えるシリコンおよびシリコン化合物が不均一に分
布しているのが明瞭である。即ち、銅の被覆を例
にとれば、シリコン含有アルミニウム合金母在に
(1)式の反応を起こすべく塩化第１銅を接触させて
加熱しても、シリコン化合物上では反応が不均一
となり、また原子状シリコンの存在する部分では
強固な酸化物が障害となつて反応は起こらない。
そして、析出した銅の表面拡散もシリコンによつ
て阻害されてしまう。 Figure 2 shows the surface analysis results of an aluminum die cast (ADC-12) containing 12% silicon, and it is clear that white silicon and silicon compounds are unevenly distributed. In other words, if we take a copper coating as an example, a silicon-containing aluminum alloy matrix
Even if cuprous chloride is brought into contact and heated to cause the reaction of equation (1), the reaction will be non-uniform on the silicon compound, and strong oxides will act as obstacles in areas where atomic silicon exists. No reaction occurs.
Furthermore, surface diffusion of deposited copper is also inhibited by silicon.
一般に前記異種金属層は電気めつき、無電解め
つき等の湿式めつきのめつき中間層として利用さ
れる。アルミニウム状に密着力の高いめつき皮膜
が要求される場合や高温に耐えるめつきが要求さ
れる場合には絶好の中間層といえる。 Generally, the dissimilar metal layer is used as a plating intermediate layer in wet plating such as electroplating and electroless plating. It is an ideal intermediate layer when a plating film with high adhesion is required on aluminum or when a plating that can withstand high temperatures is required.
しかしながら、前述のごとく、前記母材表面が
１部露出してしまうような被覆では、めつき中間
層としての機能が半減してしまい、異種金属被覆
処理の意味がなくなつてしまう。 However, as described above, if a part of the surface of the base material is exposed, the function as a plating intermediate layer is halved, and the dissimilar metal coating process becomes meaningless.
（問題点を解決するための手段）
本発明者等は、前記従来法の問題点を除去する
ために、シリコン含有アルミニウム合金母材をフ
ツ素イオンを含む溶液に浸漬することによつて該
母材表面のシリコン濃度を低下させ、しかるのち
従来法の異種金属被覆を行なう方法を発明した。
該母材表面のシリコンを除去すれば、前記(1)式の
反応が起こる面積が広くなるため、不均一な拡散
層の生地を回避でき、かつ析出する異種金属の表
面拡散に達する障害も軽減される。(Means for Solving the Problems) In order to eliminate the problems of the conventional method, the present inventors have developed a silicon-containing aluminum alloy base material by immersing it in a solution containing fluorine ions. We have invented a method to reduce the silicon concentration on the surface of the material and then apply a conventional dissimilar metal coating.
If the silicon on the surface of the base material is removed, the area where the reaction of formula (1) occurs will be expanded, thereby avoiding the formation of an uneven diffusion layer, and reducing the obstacles to surface diffusion of precipitated dissimilar metals. be done.
即ち、本発明の要旨とするところは、シリコン
を含有するアルミニウム合金母材をフツ素イオン
を含む溶液に浸漬する第１工程と、該合金母材に
被覆すべき金属のハロゲン化物を接触させ、該合
金母材の融点未満で、かつアルミニウムとハロゲ
ン化金属との間に置換反応が生ずる温度以上に加
熱する第２工程とより成る、シリコン含有アルミ
ニウム合金に異種金属を被覆する方法である。 That is, the gist of the present invention is a first step of immersing an aluminum alloy base material containing silicon in a solution containing fluorine ions, and contacting the alloy base material with a metal halide to be coated. This is a method for coating a silicon-containing aluminum alloy with a dissimilar metal, which comprises a second step of heating below the melting point of the alloy base material and above a temperature at which a substitution reaction occurs between aluminum and a metal halide.
前記第１工程なねらいは、フツ素イオンのシリ
コン選択溶解作用を利用して、前記合金母材表面
のシリコン濃度を低下させ、シリコン酸化物によ
る置換反応の妨害を軽減し、かつ異種金属の表面
拡散を容易ならしめることにある。 The aim of the first step is to reduce the silicon concentration on the surface of the alloy base material by utilizing the silicon selective dissolution effect of fluorine ions, to reduce the interference of the substitution reaction by silicon oxide, and to reduce the silicon concentration on the surface of the dissimilar metal. The goal is to make it easier to spread.
フツ素イオンの供給源は、フツ化水素酸、フツ
化カリウム、フツ化ナトリウム等のフツ化物、フ
ツ素と他のハロゲンとの化合物、フツ素と酸素属
元素との化合物、さらにホウフツ化カリウムやホ
ウフツ化ナトリウム等に代表される多くの金属お
よび非金属元素を中心元素とするフルオロ錯塩等
である。 Sources of fluorine ions include fluorides such as hydrofluoric acid, potassium fluoride, and sodium fluoride, compounds of fluorine and other halogens, compounds of fluorine and oxygen group elements, and potassium borofluoride and other halogens. These include fluoro complex salts that have many metal and nonmetal elements as their central elements, such as sodium borofluoride.
また、シリコン溶解の際に、スマツトが残るた
め、スマツト除去を目的として硝酸等を混入する
のが好ましく、前記第１工程後、超音波洗浄等に
より、物理的、機械的にスマツトを除去すること
も可能である。さらに、シリコン選択溶解のため
に、酢酸等を混合することも効果的である。 Furthermore, since smut remains during silicon melting, it is preferable to mix nitric acid or the like for the purpose of removing smut. After the first step, smut must be physically and mechanically removed by ultrasonic cleaning or the like. is also possible. Furthermore, it is also effective to mix acetic acid or the like for selective dissolution of silicon.
本発明は、第２工程である異種金属被覆工程の
前に、前期合金母材をフツ素イオンを含む溶液に
浸漬することを特徴としており、第２工程の内容
に限定されることなく、広く付加変更を成し得る
ものである。 The present invention is characterized in that the first alloy base material is immersed in a solution containing fluorine ions before the second process, which is a dissimilar metal coating process, and is not limited to the content of the second process, but can be used widely. Additional changes may be made.
例えば、ハロゲン化金属は、塩化第１銅の他、
塩化第２銅、塩化錫、塩化亜鉛、塩化ニツケル、
ヨウ化錫、臭化銅等を含むものであり、ハロゲン
化金属の供給方法や反応残渣の除去方法等の付加
変更も本願特許請求の範囲に包含されるものであ
る。 For example, metal halides include cuprous chloride,
Cupric chloride, tin chloride, zinc chloride, nickel chloride,
It contains tin iodide, copper bromide, etc., and additional changes in the method of supplying the metal halide, the method of removing reaction residues, etc. are also included within the scope of the claims of the present application.
（作用・効果）
本発明により、従来、適正な異種金属被覆が困
難であつたADC−12、ADC−10、Ａ−390等の
ダイカスト製品や鍛造品であるA4032FD等に異
種金属被覆が容易に行え、また前記第１工程を部
分的に行うことにより、シリコン濃度の高いブレ
ージングシートの部分異種金属被覆が可能となつ
た。(Operation/Effect) The present invention makes it easy to coat die-cast products such as ADC-12, ADC-10, A-390, etc. and forged products such as A4032FD with dissimilar metals, for which it has been difficult to properly coat dissimilar metals in the past. Furthermore, by partially performing the first step, it became possible to partially coat a brazing sheet with a high silicon concentration with a dissimilar metal.
前記アルミニウムダイカスト（ADC−12）を
本願特許請求の第１工程後に面分析した結果が第
１図であり、第１工程前に比べてシリコン濃度が
１／５に減少するとともに、検出されるシリコンお
よびシリコン化合物が均一に分布していることが
明らかである。 Figure 1 shows the results of surface analysis of the aluminum die cast (ADC-12) after the first process claimed in the present patent application, and the silicon concentration is reduced to 1/5 compared to before the first process, and the detected silicon It is clear that the silicon compounds are uniformly distributed.
本発明によつて表面処理されたシリコン含有ア
ルミニウム合金は、該合金母材表面が露出せず、
密着の良い異種金属層を有し、必要に応じて、は
んだ、ニツケル、銅、錫、銀等およびこれらを組
みあわせた表面処理を付加することが可能とな
る。該合金母材に限らず、アルミニウム合金はめ
つきしにくい金属の代表とされており、本発明に
よつて、密着のよい所望のめつき層を与えること
が容易となつた。 In the silicon-containing aluminum alloy surface-treated according to the present invention, the surface of the alloy base material is not exposed,
It has dissimilar metal layers with good adhesion, and if necessary, it is possible to add surface treatments such as solder, nickel, copper, tin, silver, etc., or a combination of these. In addition to the alloy base material, aluminum alloys are representative of metals that are difficult to plate, and the present invention makes it easy to provide a desired plating layer with good adhesion.
（実施例） 次に本発明の実施例を紹介する。(Example) Next, examples of the present invention will be introduced.
材質ADC−12、板厚３mm×幅30mm×長さ55mm
のアルミニウムダイカストを硝酸40％、フツ化水
素酸８％の水溶液中に30秒浸漬し、水洗、乾燥
後、該ダイカストの１部10mm×10mmの面積に、ワ
セリンをバインダーとして塩化第１銅を塗布し、
該ダイカストから40mm離れたところに設置した
11.6watt／cm2赤外線ランプによつて90秒加熱し
た。 Material ADC-12, plate thickness 3mm x width 30mm x length 55mm
An aluminum die cast was immersed in an aqueous solution of 40% nitric acid and 8% hydrofluoric acid for 30 seconds, washed with water, and dried, then applied cuprous chloride to an area of 10 mm x 10 mm using Vaseline as a binder. death,
It was installed 40mm away from the die casting.
Heated for 90 seconds with a 11.6 watt/cm 2 infrared lamp.
加熱処理後、該ダイカストを水冷し、反応残渣
を除去した結果、10mm×10mmの１部表面が完全に
銅で覆われたアルミニウムダイカスト製品を得
た。このとき得られた被覆層厚さは、アルミニウ
ムと銅の相互拡散層が約3μｍ、銅被覆層が約4μ
ｍである。 After the heat treatment, the die cast was cooled with water and reaction residues were removed, resulting in an aluminum die cast product measuring 10 mm x 10 mm with a portion of the surface completely covered with copper. The thickness of the coating layer obtained at this time was approximately 3 μm for the aluminum and copper interdiffusion layer, and approximately 4 μm for the copper coating layer.
It is m.
本実施例の供試材であるアルミダイカストの面
分析結果を第２図に、第１工程であるフツ素イオ
ン含有溶液処理後の面分析結果を第１図にそれぞ
れ示す。 FIG. 2 shows the surface analysis results of the aluminum die-cast material used as the test material of this example, and FIG. 1 shows the surface analysis results after the first step of treatment with a fluorine ion-containing solution.
図面は、本発明の金属組織を表す写真にして、
第１図は、前記第１工程後、第２図は第１工程前
のE.P.M.A.によるシリコンの分析結果である。
The drawings are photographs showing the metal structure of the present invention,
FIG. 1 shows the results of analyzing silicon by EPMA after the first step, and FIG. 2 shows the results before the first step.
Claims (1)
素イオンを含む溶液に浸漬する第１工程と、該合
金母材に被覆すべき金属のハロゲン化物（以下、
ハロゲン化金属という）を接触させ、該合金母材
の融点未満で、かつアルミニウムとハロゲン化金
属との間に置換反応が生ずる温度以上に加熱する
第２工程とより成る、シリコン含有アルミニウム
合金に異種金属を被覆する方法。1 A first step of immersing an aluminum alloy containing silicon in a solution containing fluorine ions, and a metal halide (hereinafter referred to as
a second step of contacting a metal halide) and heating it to a temperature below the melting point of the alloy base material and above a temperature at which a substitution reaction occurs between aluminum and the metal halide. A method of coating metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2416585A JPS6296681A (en) | 1985-02-09 | 1985-02-09 | Method for coating aluminum alloy containing silicon with metal of different kind |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2416585A JPS6296681A (en) | 1985-02-09 | 1985-02-09 | Method for coating aluminum alloy containing silicon with metal of different kind |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6296681A JPS6296681A (en) | 1987-05-06 |
| JPH0359144B2 true JPH0359144B2 (en) | 1991-09-09 |
Family
ID=12130731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2416585A Granted JPS6296681A (en) | 1985-02-09 | 1985-02-09 | Method for coating aluminum alloy containing silicon with metal of different kind |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6296681A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5668570A (en) | 1993-06-29 | 1997-09-16 | Ditzik; Richard J. | Desktop computer with adjustable flat panel screen |
| KR100609852B1 (en) | 2004-05-04 | 2006-08-08 | 삼성전자주식회사 | Display apparatus |
| KR100997932B1 (en) | 2004-06-15 | 2010-12-03 | 삼성전자주식회사 | Display apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49106931A (en) * | 1973-02-17 | 1974-10-11 | ||
| JPS5431744A (en) * | 1977-08-15 | 1979-03-08 | Minolta Camera Co Ltd | Temperature rise preventing device for original base in electrophotographic copier |
-
1985
- 1985-02-09 JP JP2416585A patent/JPS6296681A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49106931A (en) * | 1973-02-17 | 1974-10-11 | ||
| JPS5431744A (en) * | 1977-08-15 | 1979-03-08 | Minolta Camera Co Ltd | Temperature rise preventing device for original base in electrophotographic copier |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6296681A (en) | 1987-05-06 |
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