JPH0358622U - - Google Patents

Info

Publication number

JPH0358622U

JPH0358622U JP12077089U JP12077089U JPH0358622U JP H0358622 U JPH0358622 U JP H0358622U JP 12077089 U JP12077089 U JP 12077089U JP 12077089 U JP12077089 U JP 12077089U JP H0358622 U JPH0358622 U JP H0358622U

Authority

JP

Japan

Prior art keywords

wiring layer

thin film

silicon thin

film transistor

amorphous

Prior art date

1989-10-16

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
• 239000010409 thin film Substances 0.000 claims description 9
• 239000000758 substrate Substances 0.000 claims description 2
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
• 239000000463 material Substances 0.000 claims 1
• 229910052710 silicon Inorganic materials 0.000 claims 1
• 239000010703 silicon Substances 0.000 claims 1
• 239000010408 film Substances 0.000 description 2
• 238000010586 diagram Methods 0.000 description 1
• 239000004973 liquid crystal related substance Substances 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 238000000034 method Methods 0.000 description 1
• 230000001681 protective effect Effects 0.000 description 1