JPH0350985B2 - - Google Patents
Info
- Publication number
- JPH0350985B2 JPH0350985B2 JP59016466A JP1646684A JPH0350985B2 JP H0350985 B2 JPH0350985 B2 JP H0350985B2 JP 59016466 A JP59016466 A JP 59016466A JP 1646684 A JP1646684 A JP 1646684A JP H0350985 B2 JPH0350985 B2 JP H0350985B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- gate
- sensitive film
- oxide
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 15
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 15
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 claims description 10
- 229910003450 rhodium oxide Inorganic materials 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 description 42
- 239000010408 film Substances 0.000 description 37
- 239000000758 substrate Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000012528 membrane Substances 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- -1 Si 3 N 4 Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002504 iridium compounds Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は水溶液のPHを測定するISFETセンサ
（電界効果トランジスタ型イオンセンサ）に関す
る。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an ISFET sensor (field effect transistor type ion sensor) for measuring the pH of an aqueous solution.
〈従来技術〉
ISFETセンサはMOSFETのゲート金属電極に
代えてイオン感応膜を形成した構造をしており、
その動作原理もMOSFETのそれと近似してい
る。即ち、ISFETセンサを浸漬した水溶液中の
イオンによつてゲート表面の電位が変化し、これ
によつてゲート絶縁膜下の半導体の電導度が変化
しドレーン電流が変化する。従つて、このドレー
ン電流の変化から水溶液のイオン活量を測定でき
るのである。そしてこの場合、イオン感応膜とし
てSiO2，Si3N4，Al2O3等の特定のものを用いる
と水溶液中のPHを測定することができる。<Prior art> ISFET sensors have a structure in which an ion-sensitive film is formed in place of the gate metal electrode of MOSFET.
Its operating principle is also similar to that of a MOSFET. That is, the potential on the gate surface changes due to ions in the aqueous solution in which the ISFET sensor is immersed, which changes the conductivity of the semiconductor under the gate insulating film and changes the drain current. Therefore, the ionic activity of the aqueous solution can be measured from this change in drain current. In this case, if a specific ion-sensitive membrane such as SiO 2 , Si 3 N 4 , Al 2 O 3 is used, the PH in the aqueous solution can be measured.
ところで、上記ISFETセンサはゲート部の上
にイオン感応膜を形成しているため、室内の光が
ゲート部内に入射することによつて指示がドリフ
トしたり、水溶液に出し入れする際に指示がシフ
トしたりすることがある。このような指示のドリ
フトやシフトのために、測定の信頼性や精度が悪
く、実用化には今一歩であつた。 By the way, since the above ISFET sensor has an ion-sensitive film formed on the gate, the indication may drift due to indoor light entering the gate, or the indication may shift when the sensor is placed in or out of an aqueous solution. Sometimes. Because of these drifts and shifts in the instructions, the reliability and accuracy of measurements were poor, and it was still a step away from practical application.
〈発明の目的及び構成〉
本発明は、このような欠点を解消して実用上の
支障のない新規構造のISFETセンサを提供する
ことを目的としている。<Object and Structure of the Invention> An object of the present invention is to eliminate such drawbacks and provide an ISFET sensor with a new structure that does not pose any practical problems.
而して、上記目的を達成するため第１の発明に
係るISFETセンサは、ゲート部からゲート領域
以外まで酸化イリジウム若しくは酸化ロジウムか
らなるイオン感応膜を延長して形成したことを要
旨とする。 In order to achieve the above object, the ISFET sensor according to the first invention is characterized in that an ion-sensitive film made of iridium oxide or rhodium oxide is formed extending from the gate portion to a region other than the gate region.
このようにイオン感応膜をゲート領域以外まで
延長して形成すれば、ゲート部の上にあるイオン
感応膜にパツシベーシヨン処理等を施すことによ
り、ゲート部が直接、光や温度等の影響を受けな
いように構成でき、指示ドリフトやシフト等の問
題が解消できるのである。そして、イオン感応膜
として酸化イリジウムや酸化ロジウムからなるも
のを用いれば、これらのものは良導電体であるた
め、ゲート領域から離れたところのイオン感応膜
を水溶液に浸漬することによつて生じた電位をゲ
ート部まで伝達することができ、良好な状態でPH
を測定することができる。更に、酸化イリジウム
や酸化ロジウムは良導電体であるところから、イ
オン感応膜を形成する基板の抵抗や基板との間の
絶縁性が問題とならないという特長がある。即
ち、例えば現行のSiO2，Si3N4等のイオン感応膜
を用いると、これらは絶縁体であるため、基板の
抵抗値が重要となり、あまり低いと用いることが
できない。また、同様に基板との間の絶縁性も問
題となる。しかるに、本発明のように酸化イリジ
ウム等の良導電体からなるイオン感応膜を用いれ
ば、そのような問題がなく、従つて、基板の選択
が容易となるし、絶縁性もあまり考慮する必要が
なくなる。 If the ion-sensitive film is formed to extend beyond the gate area in this way, the gate area will not be directly affected by light, temperature, etc. by applying passivation treatment to the ion-sensitive film above the gate area. This makes it possible to solve problems such as instruction drift and shifts. If a material made of iridium oxide or rhodium oxide is used as the ion-sensitive film, since these materials are good conductors, the ion-sensitive film located away from the gate region may be immersed in an aqueous solution. Potential can be transmitted to the gate, and PH is maintained in good condition.
can be measured. Furthermore, since iridium oxide and rhodium oxide are good conductors, there is no problem with the resistance of the substrate on which the ion-sensitive film is formed or the insulation between the substrate and the substrate. That is, when current ion-sensitive films such as SiO 2 and Si 3 N 4 are used, the resistance value of the substrate becomes important because these are insulators, and if the resistance value is too low, they cannot be used. Similarly, the insulation between the substrate and the substrate also becomes a problem. However, if an ion-sensitive film made of a good conductor such as iridium oxide is used as in the present invention, such problems do not arise, and therefore, the selection of the substrate becomes easy, and insulation properties do not need to be taken into account too much. It disappears.
又、絶縁体からなる現行のイオン感応膜では電
位の伝達という点から、ゲート領域以外まで延長
して形成することは出来ず、そのためゲート部か
ら導電性の電極を延長し、その端部にイオン感応
膜を形成するという手法によらざる得ないが、こ
れでは多数の作業工数を必要とするという難点が
ある。しかるに本発明によれば、酸化イリジウム
等のイオン感応膜を形成するだけの単工程で済
み、製造上も利点が多い。 In addition, current ion-sensitive membranes made of insulators cannot be formed to extend beyond the gate region due to potential transmission. The only method available is to form a sensitive film, but this method has the disadvantage of requiring a large number of man-hours. However, according to the present invention, only a single step of forming an ion-sensitive film of iridium oxide or the like is required, which has many advantages in terms of manufacturing.
又、第２の発明に係るISFETセンサは、少な
くともゲート領域以外の範囲に酸化イリジウム若
しくは酸化ロジウムからなるイオン感応膜を形成
すると共に、このイオン感応膜とゲート部とを導
電性の電極を介在して接続したことを要旨とす
る。 Further, the ISFET sensor according to the second invention includes an ion-sensitive film made of iridium oxide or rhodium oxide formed at least in an area other than the gate region, and a conductive electrode interposed between the ion-sensitive film and the gate portion. The gist is that the connection was made.
前述した第１の発明は、酸化イリジウム若しく
は酸化ロジウムからなるイオン感応膜をゲート部
からゲート領域まで延長して形成しているが、ゲ
ート部上に直接イオン感応膜を形成する場合、形
成手法によつてはゲート部を損傷するおそれがあ
る。第２の発明は、ゲート部とイオン感応膜との
間に導電性電極を介在させることによつて、ゲー
ト部の損傷のおそれという欠点を無くしたもので
ある。第２の発明のその他の効果、利点は第１の
発明のそれと略々同じである。 In the first invention described above, an ion-sensitive film made of iridium oxide or rhodium oxide is formed by extending from the gate part to the gate region, but when forming the ion-sensitive film directly on the gate part, there are problems with the formation method. There is a risk that the gate portion may be damaged. The second invention eliminates the drawback of fear of damage to the gate portion by interposing a conductive electrode between the gate portion and the ion-sensitive membrane. Other effects and advantages of the second invention are substantially the same as those of the first invention.
以下、本発明の実施例を図面に基づき説明す
る。 Embodiments of the present invention will be described below based on the drawings.
実施例 １
第１図は第１の発明の実施例を示し、１はサフ
アイヤ基板で、その上にｐ或いはｎチヤネルの
MOSFET（但し、ゲート金属電極はまだ形成さ
れていない状態のもの。）が通常の酸化−Siアイ
ランド形成、ドレイン・ソース部への不純物拡散
等の標準工程により形成してある。２がドレイ
ン、３がソースで、両者の中にゲート部４が存し
ている。そして、MOSFETのゲート酸化膜
（SiO2，SiO2−Ta2O5，SiO2−Si2N4，SiO2−
SiN4−Ta2O5等）４ａの上からゲート領域以外
まで酸化イリジウムからなるイオン感応膜５を延
長して形成してある。このイオン感応膜５を形成
する方法としては、イリジウムの反応性スパツタ
による酸化、酸化イリジウムターゲツトのスパツ
タ、イリジウム電解メツキ後の酸化、電子ビーム
加熱による蒸着等によるものがある。また、イリ
ジウムアルコオキサイド等の有機イリジウム化合
物が合成されれば、MO−CVD方式によること
もできる。イオン感応膜５のうち、ゲート部上及
びその周辺に存する部分はパツシベーシヨン膜
（図外）で処理し、光や水等がゲート部に影響を
及ぼさないようにしてある。イオン感応膜５とし
ては、酸化イリジウムの他に酸化ロジウムも用い
ることができる。Embodiment 1 FIG. 1 shows an embodiment of the first invention, in which 1 is a sapphire substrate, on which a p-channel or an n-channel
The MOSFET (however, the gate metal electrode has not yet been formed) is formed using standard processes such as oxidation-Si island formation and impurity diffusion into the drain and source regions. 2 is a drain, 3 is a source, and a gate portion 4 exists between them. Then, MOSFET gate oxide film (SiO 2 , SiO 2 −Ta 2 O 5 , SiO 2 −Si 2 N 4 , SiO 2 −
An ion sensitive film 5 made of iridium oxide is formed extending from above the SiN 4 -Ta 2 O 5 (SiN 4 -Ta 2 O 5 etc.) 4a to areas other than the gate region. Methods for forming the ion-sensitive film 5 include oxidation of iridium by reactive sputtering, sputtering of an iridium oxide target, oxidation after electrolytic plating of iridium, and vapor deposition by electron beam heating. Furthermore, if an organic iridium compound such as iridium alkoxide is synthesized, the MO-CVD method can also be used. The portion of the ion-sensitive film 5 that exists above and around the gate portion is treated with a passivation film (not shown) to prevent light, water, etc. from affecting the gate portion. As the ion-sensitive membrane 5, rhodium oxide can also be used in addition to iridium oxide.
実施例 ２
第２図は、第２の発明に係る実施例を示す。こ
の実施例では、ゲート酸化膜４ａの上に導電性の
ある金属電極６を形成し、この金属電極６上から
ゲート領域以外の範囲にわたつて酸化イリジウム
若しくは酸化ロジウムのイオン感応膜５を形成し
ている。上述した第１の実施例ではイオン感応膜
５をゲート部上にスパツタさせるとゲート酸化膜
が損傷するおそれがあるので、この実施例ではそ
のような損傷を回避するために、ゲート酸化膜４
ａとイオン感応膜５とを、金属電極６を介在させ
ることによつて接続したものである。金属電極６
としては、イリジウム（Ij）、白金（Pt）、その他
Rh，Al，Ta，Nb，Cr，Ni等の金属若しくはそ
れらの金属を組合わせたものを使用できる。Embodiment 2 FIG. 2 shows an embodiment according to the second invention. In this embodiment, a conductive metal electrode 6 is formed on the gate oxide film 4a, and an ion-sensitive film 5 of iridium oxide or rhodium oxide is formed on the metal electrode 6 in a range other than the gate region. ing. In the first embodiment described above, if the ion-sensitive film 5 is sputtered on the gate part, there is a risk that the gate oxide film will be damaged, so in this embodiment, in order to avoid such damage, the gate oxide film 4 is
a and an ion-sensitive membrane 5 are connected by interposing a metal electrode 6. Metal electrode 6
Examples include iridium (Ij), platinum (Pt), and others.
Metals such as Rh, Al, Ta, Nb, Cr, Ni, or a combination of these metals can be used.
実施例 ３
この実施例は第２の実施例を変形したもので、
金属電極６をゲート領域以外まで延長し、その延
長端にイオン感応膜５を接続している。この実施
例によれば、イオン感応膜形成時にゲート酸化膜
の損傷するおそれが更に少なくなる。Example 3 This example is a modification of the second example.
The metal electrode 6 is extended to a region other than the gate region, and the ion-sensitive membrane 5 is connected to the extended end. According to this embodiment, the risk of damage to the gate oxide film during formation of the ion-sensitive film is further reduced.
実施例 ４
この実施例は、第２、第３の実施例を改良した
もので、金属電極６をゲート領域以外に広く形成
し、その上にイオン感応膜５を形成している。こ
の実施例によれば、基板と酸化イリジウムとの熱
膨張の違いによる歪が防止でき、イオン感応薄膜
の密着性が向上するといつた利点を併せもつ。Example 4 This example is an improvement on the second and third examples, in which the metal electrode 6 is formed widely outside the gate region, and the ion-sensitive film 5 is formed thereon. According to this embodiment, distortion due to the difference in thermal expansion between the substrate and iridium oxide can be prevented, and the adhesion of the ion-sensitive thin film can be improved.
実施例 ５
この実施例は、第２の実施例に係るISFETセ
ンサの同一基板上に、イリジウム及びその酸化物
の微細パターン７を形成し、その抵抗温度特性を
ISFETセンサ出力の温度補正に利用したもので
ある。この場合、パターン７はパツシベーシヨン
膜８で防水処理してある。９…はリード取出端子
である。尚、図示はしないが、一つの基板上に上
記いずれかの実施例中のISFETセンサを２つ並
列的に形成し、一方を防水処理して温度補正用と
して利用することもできる。Example 5 In this example, a fine pattern 7 of iridium and its oxide is formed on the same substrate of the ISFET sensor according to the second example, and its resistance temperature characteristics are evaluated.
This was used for temperature correction of the ISFET sensor output. In this case, the pattern 7 is waterproofed with a passivation film 8. 9... is a lead extraction terminal. Although not shown, two ISFET sensors according to any of the above embodiments may be formed in parallel on one substrate, one of which may be waterproofed and used for temperature correction.
〈発明の効果〉
本発明に係るISFETセンサは上記の如く構成
したため次のような効果がある。<Effects of the Invention> Since the ISFET sensor according to the present invention is configured as described above, it has the following effects.
イオン感応膜がゲート部からゲート領域以外
まで延長して形成され、又は少なくともゲート
領域以外の範囲にわたつて形成されているた
め、ゲート部及びその周辺をパツシベーシヨン
処理等を施すことによつて、ゲート部や光や温
度、水等の影響を受けない構造とすることがで
き、室内の光によつて指示がドリフトしたり、
水溶液へ出し入れする際にシフトしたりするこ
とがない。 Since the ion-sensitive film is formed extending from the gate area to areas other than the gate area, or at least over an area other than the gate area, it is possible to remove the gate area by applying passivation treatment to the gate area and its surroundings. It has a structure that is not affected by parts, light, temperature, water, etc., and the instructions do not drift due to indoor light.
It does not shift when placed in or taken out of an aqueous solution.
イオン感応膜は酸化イリジウム若しくは酸化
ロジウムからなる良導電体であるため、電位を
伝導する作用も果す。従つて、イオン感応膜単
体をゲート部からゲート領域以外のところまで
延長して形成してもイオンセンサの動作に支障
を来すことがない。このため、同一性能のイオ
ンセンサを作る場合、本発明のものは製造工程
が少なく、製作容易となる。 Since the ion-sensitive membrane is a good conductor made of iridium oxide or rhodium oxide, it also functions to conduct electric potential. Therefore, even if a single ion-sensitive membrane is formed extending from the gate portion to a region other than the gate region, the operation of the ion sensor will not be hindered. Therefore, when producing ion sensors with the same performance, the one of the present invention requires fewer manufacturing steps and is easier to produce.
イオン感応膜が良導電体であるため、それを
形成する基板の抵抗値や基板との絶縁性が問題
とならず、従つて基板の選択が容易となる。 Since the ion-sensitive film is a good conductor, the resistance value of the substrate on which it is formed and the insulation with the substrate do not matter, and therefore the selection of the substrate becomes easy.
第２の発明のようにゲート部とイオン感応膜
との間を導電性電極を介在して接続すれば、イ
オン感応膜の形成に際してゲート部が損傷する
おそれがなく、製造が容易となるし、更に導電
性電極を第４の実施例で述べた如くゲート領域
以外に広く拡大し、その上にイオン感応膜を形
成すれば、イオン感応膜と基板との密着性が良
く、製造時のみならず使用時においても取扱い
に便利である。 If the gate part and the ion-sensitive film are connected through a conductive electrode as in the second invention, there is no risk of the gate part being damaged when forming the ion-sensitive film, and manufacturing becomes easy. Furthermore, as described in the fourth embodiment, if the conductive electrode is expanded to a wide area other than the gate area and the ion-sensitive film is formed on it, the adhesion between the ion-sensitive film and the substrate is good, and it can be used not only during manufacturing. It is convenient to handle during use.
図は本発明の実施例を示し、第１図イは第１の
発明の一実施例を示す平面図、第１図ロはその側
断面図、第２図イは第２の発明の一実施例を示す
平面図、第２図ロはその側断面図、第３図イ、第
４図イ及び第５図イは夫々第２の発明の他の実施
例を示す平面図、第３図ロ、第４図ロは夫々、第
３図イ，ロの側断面図、第５図ロは第５図イのＡ
−Ａ断面図である。
４……ゲート、５……イオン感応膜、６……導
電性の電極。
The drawings show an embodiment of the present invention, FIG. 1A is a plan view showing an embodiment of the first invention, FIG. 1B is a side sectional view thereof, and FIG. 2A is an embodiment of the second invention. FIG. 2(b) is a plan view showing an example, FIG. 2(b) is a side sectional view thereof, FIG. 3(a), FIG. , Fig. 4B is a side sectional view of Fig. 3A and Fig. 3B, respectively, and Fig. 5B is a side sectional view of Fig. 5A.
-A sectional view. 4...gate, 5...ion-sensitive membrane, 6...conductive electrode.
Claims (1)
ウム若しくは酸化ロジウムからなるイオン感応膜
を延長して成形したことを特徴とするISFETセ
ンサ。 ２ 少なくともゲート領域以外の範囲に酸化イリ
ジウム若しくは酸化ロジウムからなるイオン感応
膜を形成すると共に、このイオン感応膜とゲート
部とを導電性の電極を介在して接続したことを特
徴とするISFETセンサ。[Scope of Claims] 1. An ISFET sensor characterized in that an ion-sensitive film made of iridium oxide or rhodium oxide is formed by extending from a gate portion to a region other than the gate region. 2. An ISFET sensor, characterized in that an ion-sensitive film made of iridium oxide or rhodium oxide is formed at least in an area other than the gate region, and the ion-sensitive film and the gate are connected via a conductive electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59016466A JPS60158348A (en) | 1984-01-28 | 1984-01-28 | Isfet sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59016466A JPS60158348A (en) | 1984-01-28 | 1984-01-28 | Isfet sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60158348A JPS60158348A (en) | 1985-08-19 |
| JPH0350985B2 true JPH0350985B2 (en) | 1991-08-05 |
Family
ID=11917028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59016466A Granted JPS60158348A (en) | 1984-01-28 | 1984-01-28 | Isfet sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60158348A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132160A (en) * | 1985-12-04 | 1987-06-15 | Terumo Corp | Biosensor using separation gate type isfet |
| JPS62185160A (en) * | 1986-02-10 | 1987-08-13 | Terumo Corp | Biosensor |
| JPH0713611B2 (en) * | 1987-02-25 | 1995-02-15 | 帝人株式会社 | Immunosensor and immunodetection method |
-
1984
- 1984-01-28 JP JP59016466A patent/JPS60158348A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60158348A (en) | 1985-08-19 |
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