JPH03506110A - gallium arsenide switching mixer - Google Patents
gallium arsenide switching mixerInfo
- Publication number
- JPH03506110A JPH03506110A JP2507253A JP50725390A JPH03506110A JP H03506110 A JPH03506110 A JP H03506110A JP 2507253 A JP2507253 A JP 2507253A JP 50725390 A JP50725390 A JP 50725390A JP H03506110 A JPH03506110 A JP H03506110A
- Authority
- JP
- Japan
- Prior art keywords
- mixer
- information signal
- gallium arsenide
- output means
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04H—BROADCAST COMMUNICATION
- H04H40/00—Arrangements specially adapted for receiving broadcast information
Landscapes
- Engineering & Computer Science (AREA)
- Signal Processing (AREA)
- Superheterodyne Receivers (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Transmitters (AREA)
- Disintegrating Or Milling (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
Abstract
Description
【発明の詳細な説明】 ガリウムヒ素スイッチング・ミキサ 技術分野 本発明は一般にミキサに関し、ざらに詳しくはエンハンスメント・モード・ガリ ウムヒ素（ＧａＡｓ＞スイッチング・デバイスを用いるＧａＡｓスイッチング・ ミキサに関する。[Detailed description of the invention] gallium arsenide switching mixer Technical field TECHNICAL FIELD The present invention relates generally to mixers, and more particularly to enhancement mode GaAs switching device using GaAs > switching device Regarding mixers.
背景技術 スイッチング・ミキサで生じる歪成分は、局部発振器ならびにその他一部ミキサ 内部のデバイスに固有のパラメータによって与えられる注入信号の立上り時間に 比例することが知られている。従って、これらの歪成分は注入信号の立上り時間 を防縮することにより抑えることができる。Background technology Distortion components generated by switching mixers are caused by local oscillators and some other mixers. to the rise time of the injection signal given by the internal device-specific parameters. It is known that they are proportional. Therefore, these distortion components affect the rise time of the injected signal. This can be suppressed by pre-shrinking.
ＧａＡｓスイッチング・ミキサの既知の設計では、ＧａＡＳ空乏モード・デバイ スの形状を変化させることによりデバイスのターン・オン（スイッチング・ポイ ント）を最小限に抑える試みが行われていた。空乏モードＧａＡｓデバイスの形 状を変化させることは有用ではめるが、このように変化させても局部発振器の所 要駆動レベルまたは高調波歪を十分に低減することはできなかった。従って、優 れたＧａＡＳスイッチング・ミキサを必要としていた。Known designs of GaAs switching mixers include GaAs depletion mode devices. device turn-on (switching point) by changing the shape of the Attempts were made to minimize the Depletion mode GaAs device shape Although it is useful to change the state of the local oscillator, It was not possible to sufficiently reduce the required driving level or harmonic distortion. Therefore, excellent The company needed a GaAS switching mixer with a built-in design.
従って、本発明の目的は従来技術の欠点を克服するＧａＡ Ｓミキサを提供する ことである。Therefore, it is an object of the present invention to provide a GaA S mixer that overcomes the drawbacks of the prior art. That's true.
発明の概要 ＧａＡｓエンハンスメント・モード・デバイスのしきい電圧の絶対値は、空乏モ ードデバイスのピンチオフ電圧の絶対値よりもかなり小ざい。故に、本発明によ る（３ａＡｓスイツチング・ミキサは、情報信号および注入信号を受取ることに より中間周波数信号を出力する。注入信号がエンハンスメント・モードＧａＡｓ デバイスを制御して、所要注入駆動レベルおよび歪成分を最小限に抑える。Summary of the invention The absolute value of the threshold voltage for GaAs enhancement mode devices is is much smaller than the absolute value of the pinch-off voltage of the board device. Therefore, according to the present invention, (The 3aAs switching mixer receives the information signal and the injection signal. outputs an intermediate frequency signal. The injection signal is enhancement mode GaAs Control the device to minimize the required injection drive level and distortion components.
好適実施例の詳細な説明 図１は、一般に二重平衡ミキサ（ｄｏｕｂｌｅ−ｂａｌａｎｃｅｄ ｍｉｘｅｒ ｃｏｎｆｉｇｕｒａｔｉｏｎ）として知られる構成で組まれたスイッチング・ミ キサ回路１０を示す。電流源１２は、ガリウムヒ素空乏モード電界効果トランジ スタ差動対１４．１４”のソースからアースに結合される。Detailed Description of the Preferred Embodiment FIG. 1 generally shows a double-balanced mixer. A switching module configured in a configuration known as 1 shows a filter circuit 10. Current source 12 is a gallium arsenide depletion mode field effect transistor. The source of the star differential pair 14.14'' is coupled to ground.
トランジスタ１４．１４’は、いわゆる単一平衡構成（ｓｉｎｇｌｅ−ｂａｌａ ｎｃｅｄ ｃｏｎｆｉｇｕｒａｔｉｏｎ）で結合されている。従って、トランジ スタ１４のソースはトランジスタ１４′のソースに結合される。トランジスタ１ ４のドレインは、エンハンスメント・モードＧａＡＳトランジスタ差動対１８． ２２のソースに結合され、トランジスタ１４′のドレインはトランジスタ差動対 ’１８’ 、２２’のソースに結合される。トランジスタ１４．１４’は、トラ ンジスタ１８゜１８′およびトランジスタ２２．２２’と同様に形状的にはでき るだけ対称になっている。The transistors 14, 14' are in a so-called single-balance configuration (single-balance configuration). nced configuration). Therefore, the transition The source of star 14 is coupled to the source of transistor 14'. transistor 1 The drain of 18.4 is an enhancement mode GaAS transistor differential pair 18. 22 and the drain of transistor 14' is coupled to the source of transistor 14'. It is coupled to the sources '18' and 22'. Transistor 14.14' is a transistor Similar to transistor 18°18' and transistor 22,22', it is not possible in terms of shape. It is symmetrical.
トランジスタ１８のドレインはトランス結合２４の一方の一次端子２６に結合さ れ、トランジスタ１８′のトレインはトランス結合２４の他方の一次端子２６′ に結合される。トランジスタ２２のドレインはトランジスタ１８′のドレインに 結合され、同様に、トランジスタ２２′のドレインはトランジスタ１８のトレイ ンに結合される。トランス２４の一次側は端子２８において中間タップされて平 衡出力を与える。トランス２４の二次側は端子３０と３０′との間に伸びている 。The drain of transistor 18 is coupled to one primary terminal 26 of transformer coupling 24. and the train of transistor 18' is connected to the other primary terminal 26' of transformer coupling 24. is combined with The drain of transistor 22 is connected to the drain of transistor 18'. Similarly, the drain of transistor 22' is coupled to the tray of transistor 18. connected to the The primary side of the transformer 24 is center tapped and flat at the terminal 28. Gives balanced output. The secondary of transformer 24 extends between terminals 30 and 30'. .
高周波（ｒａｄｉｏ−ｆｒｅｑｕｅｎｃｙ）情報信号１６はトランジスタ１４の ゲートに印加され、高周波信号１６゛ （すなわち、信号１６の補数または負を 表す）はトランジスタ１４゛のゲートに印加される。信＠１６，１６’は、相補 位相信号（ｃｏｍｐｌｅｍｅｎｔａｒｙ−ｐｈａｓｅｄ ｓｉｇｎａｌ）として 知られている。局部発蚤器注入信号２０はトランジスタ１８．１８”のゲートに 印加される。信号２０゛ （信号２０の補数を表す）はトランジスタ２２．２２ ’のゲートに印加される。相補位相信号１６．１６’により、トランジスタ差動 対１８゜２２および１８’ 、２２”は変化する。従って、相補位相信号１６． １６’および相補位相信号２０，２０′の積算は、トランジスタ差動対１８．２ ２およびトランジスタ差動対１８’ 、２２”それぞれにおいて実行される。出 力信号は端子３０と３０’ との間に現れる。The radio-frequency information signal 16 is connected to the transistor 14. The high frequency signal 16゛ (i.e. the complement or negative of signal 16) is applied to the gate. ) is applied to the gate of transistor 14'. @16,16' is complementary As a complementary-phased signal Are known. Local oscillator injection signal 20 is applied to the gate of transistor 18.18” applied. The signal 20゛ (representing the complement of signal 20) is the transistor 22.22 ' is applied to the gate of '. Complementary phase signal 16.16' allows transistor differential The pairs 18° 22 and 18', 22'' change. Therefore, the complementary phase signals 16. 16' and complementary phase signals 20, 20' are integrated by transistor differential pair 18.2. 2 and transistor differential pair 18', 22'', respectively. A force signal appears between terminals 30 and 30'.
図面の簡単な説明 第１図は、本発明に従ったＧａＡＳミキサを示す説明図である。Brief description of the drawing FIG. 1 is an explanatory diagram showing a GaAS mixer according to the present invention.
ＦＩＧ、１ 国際調査報告FIG.1 international search report
Claims (20)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34526989A | 1989-05-01 | 1989-05-01 | |
| US345,269 | 1989-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03506110A true JPH03506110A (en) | 1991-12-26 |
Family
ID=23354299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2507253A Pending JPH03506110A (en) | 1989-05-01 | 1990-04-25 | gallium arsenide switching mixer |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0426812B1 (en) |
| JP (1) | JPH03506110A (en) |
| AT (1) | ATE142058T1 (en) |
| DE (1) | DE69028275T2 (en) |
| DK (1) | DK0426812T3 (en) |
| ES (1) | ES2090133T3 (en) |
| WO (1) | WO1990014150A2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4603435A (en) * | 1984-08-20 | 1986-07-29 | Gte Laboratories Incorporated | Microwave mixer apparatus |
| DE3509327A1 (en) * | 1985-03-15 | 1986-09-25 | Telefunken electronic GmbH, 7100 Heilbronn | DYNAMIC FREQUENCY DIVIDER WITH MIXING STAGE AND AMPLIFIER |
| GB2177860B (en) * | 1985-07-09 | 1989-04-26 | Multitone Electronics Plc | R.f. mixer |
| US4896374A (en) * | 1988-12-09 | 1990-01-23 | Siemens Aktiengesellschaft | Broadband monolithic balanced mixer apparatus |
-
1990
- 1990-04-25 JP JP2507253A patent/JPH03506110A/en active Pending
- 1990-04-25 DE DE69028275T patent/DE69028275T2/en not_active Expired - Fee Related
- 1990-04-25 WO PCT/US1990/002284 patent/WO1990014150A2/en active IP Right Grant
- 1990-04-25 EP EP90907888A patent/EP0426812B1/en not_active Expired - Lifetime
- 1990-04-25 ES ES90907888T patent/ES2090133T3/en not_active Expired - Lifetime
- 1990-04-25 AT AT90907888T patent/ATE142058T1/en not_active IP Right Cessation
- 1990-04-25 DK DK90907888.3T patent/DK0426812T3/en active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1990014150A3 (en) | 1991-04-04 |
| ES2090133T3 (en) | 1996-10-16 |
| EP0426812B1 (en) | 1996-08-28 |
| ATE142058T1 (en) | 1996-09-15 |
| DE69028275D1 (en) | 1996-10-02 |
| DK0426812T3 (en) | 1996-09-16 |
| EP0426812A4 (en) | 1992-01-15 |
| DE69028275T2 (en) | 1997-03-13 |
| EP0426812A1 (en) | 1991-05-15 |
| WO1990014150A2 (en) | 1990-11-29 |
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