JPH03502735A - Improvements regarding pyroelectric detectors - Google Patents
Improvements regarding pyroelectric detectorsInfo
- Publication number
- JPH03502735A JPH03502735A JP1510010A JP51001089A JPH03502735A JP H03502735 A JPH03502735 A JP H03502735A JP 1510010 A JP1510010 A JP 1510010A JP 51001089 A JP51001089 A JP 51001089A JP H03502735 A JPH03502735 A JP H03502735A
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric
- detector
- sensitivity
- materials
- improving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 35
- 230000035945 sensitivity Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 6
- 238000005513 bias potential Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/003—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using pyroelectric elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 パイロ電気検出器に関する改良 本発明はパイロ電気検出器及びパイロ電気検出器内のパイロ電気材の感度改善法 にｇａする。[Detailed description of the invention] Improvements regarding pyroelectric detectors The present invention relates to a pyroelectric detector and a method for improving the sensitivity of a pyroelectric material in a pyroelectric detector. to ga.
公知の代表的なパイロ電気検出器を第１図に略示し、ここでパイＯＫ気ｉ４Ｐの 温度変化により接合電界効果型トランジスタＪのゲートに電圧変化が生じそれは その出力２において適切な回路により測定することができる。A typical known pyroelectric detector is schematically shown in FIG. A voltage change occurs at the gate of junction field effect transistor J due to temperature change, which is At its output 2 it can be measured by a suitable circuit.
回線３はトランジスタＪへの給１線であり、回ｗＡ１は接地されている。パイ０ １に気材Ｐに並列配置された抵抗器Ｒは装ｄｆ）電気的時定数を制御し且つトラ ンジスタＪのゲートを正確にバイアスする二重の機能を有している。Line 3 is a feed line to transistor J, and line wA1 is grounded. Pi 0 1, a resistor R placed in parallel with the air material P is used to control the electrical time constant and It has the dual function of accurately biasing the gate of resistor J.
本発明の目的は第１図に示すものに対して改善されたパイロ電気検出器を提供す ることである。It is an object of the present invention to provide an improved pyroelectric detector over that shown in FIG. Is Rukoto.
本発明の第１の局面に従ってパイロ“踵気検出姦内のパイロ電気材の感度を改善 する方法が提供され、この方法はパイロ電気材の両端間にバイアスを加えること によりパイロ電気材の感度をパイロ電気材の両＠間にバイアスを加えない場合よ りも高めることからなっている。Improving the sensitivity of pyroelectric materials in pyroelectric heel detection according to the first aspect of the invention A method is provided for applying a bias across the pyroelectric material. The sensitivity of the pyroelectric material is compared to when no bias is applied between the pyroelectric materials. It also increases the temperature.
本発明の第２の局面に従って、動作上パイロ電気材は印加バイアス電位とされ、 パイロ電気材の温度変化に対するパイロ１ｉ気検出器の出力はパイロ電気材の両 端間に加わるバイアスの強さに依存するようにされたバイｏ１ａ気月を組み入れ た回路橘成を具＠するパイロ電気検出器が提供される。In accordance with a second aspect of the invention, the pyroelectric material is operatively brought to an applied bias potential; The output of the Pyro 1i gas detector in response to temperature changes in the pyroelectric material is Incorporating a bio-o1a qi-mo that is made to depend on the strength of the bias applied between the edges. A pyroelectric detector is provided that includes a circuit configuration.
一実施例において、パイロ電気材は接合電界効果型トランジスタのゲートへ電気 的に接続されており、パイロ電気材の温度変化により接合電界効果型トランジス タのゲートに電圧変化が生じる。別の実施例において、充分高い放射レベルが測 定される場合には接合電界効果型トランジスタを省いたり、あるいはＭＯＳＦＥ Ｔ、バイポーラトランジスタもしくは抵抗器等の代巷要素で置換することができ る。In one embodiment, the pyroelectric material provides electrical power to the gate of a junction field effect transistor. The temperature change of the pyroelectric material causes the junction field effect transistor to A voltage change occurs at the gate of the motor. In another embodiment, a sufficiently high radiation level is measured. If specified, the junction field effect transistor may be omitted or a MOSFE T, can be replaced with a high voltage element such as a bipolar transistor or a resistor. Ru.
もう一つの実施例では、パイロ電気材と直列に抵抗器が配置されており抵抗器は パイロ電気材と低もしくはゼロ電圧回線との門に設けられている。In another embodiment, a resistor is placed in series with the pyroelectric material and the resistor is Provided at the gate between pyroelectric materials and low or zero voltage lines.
次に、本発明を添付図を参照として、例示して説明し、ここで、 第１図は公知のパイロ電気検出器の略図であり、第２図は本発明の実施例に従っ たパイロ電気検出器の略図である。The invention will now be described by way of example with reference to the accompanying drawings, in which: FIG. 1 is a schematic diagram of a known pyroelectric detector, and FIG. 2 is a schematic diagram of a known pyroelectric detector, and FIG. 1 is a schematic diagram of a pyroelectric detector.
改善された放射検出器を第２図に示す。パイロ電気素子Ｐの非信号側（導Ｉ！４ ）が（図ボせぬ）外部高電圧源へ取り出されてパイロ電気材をバイアス電界の元 で作動させるようにする。使用するパイロ電気材はこのような状況下で特性が＾ められ高い感度が得られるものでなければならない。An improved radiation detector is shown in FIG. Non-signal side of pyroelectric element P (conductor I!4 ) is taken out to an external high voltage source (not shown in the figure), which applies a bias electric field to the pyroelectric material. Make it work. The pyroelectric material used has characteristics under these conditions ^ It must be possible to obtain high sensitivity.
例えば、パイロ電気材Ｐが変性鉛ジルコネートセラミックであり、Ｊが゛電界効 果型トランジスタであり、Ｒが１０１００であるような検出器構造を製造するこ とができる。デバイス面積はおよそ１ｍＴｒＬ２としその厚さをおよそ５０μｍ とすることができる。第１図の構成において２００１−１２で変調される放ｆＩ ４源の前に配置すると、増幅後５０？？ＬＶの信号レベルが観察される。回線４ を＋１５０Ｖとして第２図に適合するように再構成すると、同じ放射入力及び増 幅条件の元で出力レベルは７５ｍＶへ上昇する。For example, pyroelectric material P is a modified lead zirconate ceramic, and J is It is possible to manufacture a detector structure such that it is a fruit transistor and R is 10100. I can do it. The device area is approximately 1 mTrL2 and the thickness is approximately 50 μm. It can be done. Radiation fI modulated at 2001-12 in the configuration of Figure 1 If placed in front of 4 sources, 50? after amplification? ? The signal level of LV is observed. line 4 If we reconfigure it to match Figure 2 with +150V, we get the same radiation input and increase. Under width conditions the output level rises to 75mV.
本発明を第２図の実施例に関して前記したが、同業者であれば発明の範囲内に入 る別の実施例も理解できるものと思われる。Although the invention has been described above with respect to the embodiment of FIG. Other embodiments may also be understood.
例えば、バイ０電気材素子Ｐは１次元もしくは２次元アレイとして配置された多 数の類似素子の中のただ１個の素子とすることができる。For example, a bi-0 electrical material element P can be arranged as a one-dimensional or two-dimensional array. It can be only one element among a number of similar elements.
また、トランジスタＪは簡便なインピーダンスコンバータとして作用することも お判りいただけるものと思われる。充分に高い放射レベルを測定する場合には、 それを省いたりＭＯＳＦＥＴ、バイポーラトランジスタさらには抵抗器等の代！ ！′ｆｔ素で置換することができる。Transistor J can also act as a simple impedance converter. I think you can understand that. When measuring sufficiently high radiation levels, You can omit it and replace it with MOSFETs, bipolar transistors, and even resistors! ! 'ft elements can be substituted.
トランジスタＪのバイアス条件に応じて、抵抗器Ｒは不要としたりＰの材料中に 組み入れることもできる。Depending on the bias conditions of transistor J, resistor R may be unnecessary or may be added to the material of P. It can also be incorporated.
国際調査報告 ＝”””’−””−ＰＣＴ／ＧＢ ８９１０１１１１国際調査報告 ＧＢ ８９０１１１１international search report =”””’-””-PCT/GB 89101111 International Search Report GB 8901111
Claims (6)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8822693A GB2223571B (en) | 1988-09-28 | 1988-09-28 | Improvements in or relating to pyroelectric detectors |
| GB8822693.1 | 1988-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03502735A true JPH03502735A (en) | 1991-06-20 |
Family
ID=10644336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1510010A Pending JPH03502735A (en) | 1988-09-28 | 1989-09-21 | Improvements regarding pyroelectric detectors |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0419583A1 (en) |
| JP (1) | JPH03502735A (en) |
| GB (1) | GB2223571B (en) |
| WO (1) | WO1990003556A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2002511A4 (en) | 2006-03-08 | 2012-02-29 | Wispry Inc | Tunable impedance matching networks and tunable diplexer matching systems |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3453887A (en) * | 1967-02-08 | 1969-07-08 | Corning Glass Works | Temperature change measuring device |
| US4032783A (en) * | 1975-06-09 | 1977-06-28 | Hughes Aircraft Company | Pyroelectric radiation sensor and imaging device utilizing same |
-
1988
- 1988-09-28 GB GB8822693A patent/GB2223571B/en not_active Expired - Lifetime
-
1989
- 1989-09-21 WO PCT/GB1989/001111 patent/WO1990003556A1/en not_active Application Discontinuation
- 1989-09-21 EP EP89910879A patent/EP0419583A1/en not_active Withdrawn
- 1989-09-21 JP JP1510010A patent/JPH03502735A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2223571B (en) | 1992-09-02 |
| GB2223571A (en) | 1990-04-11 |
| EP0419583A1 (en) | 1991-04-03 |
| GB8822693D0 (en) | 1989-03-30 |
| WO1990003556A1 (en) | 1990-04-05 |
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