JPH0343789B2 - - Google Patents
Info
- Publication number
- JPH0343789B2 JPH0343789B2 JP59074910A JP7491084A JPH0343789B2 JP H0343789 B2 JPH0343789 B2 JP H0343789B2 JP 59074910 A JP59074910 A JP 59074910A JP 7491084 A JP7491084 A JP 7491084A JP H0343789 B2 JPH0343789 B2 JP H0343789B2
- Authority
- JP
- Japan
- Prior art keywords
- section
- reading
- multilayer wiring
- reading device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
- H04N1/031—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Description
【発明の詳細な説明】
〔技術分野〕
本発明は光学的読取装置に関し、特に読取手段
の構造に特徴を有する読取装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an optical reading device, and more particularly to a reading device characterized by the structure of its reading means.
従来、フアクシミリや文字読取装置等の画像信
号処理用光学的読取装置の読取手段として用いら
れる光電変換装置において、結晶シリコンからな
る１次元のフオトダイオード型長尺フオトセンサ
ーが用いられていた。しかして、このフオトセン
サーは、作製できるシリコン単結晶に大きさ及び
加工精度の点から、その長さに限度があり且つ作
製時の歩留りが低いという欠点があつた。従つ
て、読取原稿の幅が大きい場合（たとえばA4版
で幅210mm）には、レンズ系を用いて原画をフオ
トセンサー上に縮小結像して読取りが行なわれて
いた。しかしながら、この様な縮小光学系を用い
ると、受光部の小型化が困難になり、また個々の
受光面積（画素面積）が大きくとれないために十
分な信号電流を得るためには大きな光量を必要と
する。このため、上記の如きフオトセンサーは読
取時間を長くした低スピードタイプの読取装置又
は高解像力を要求されない読取装置に使用されて
いるのが現状である。
Conventionally, a one-dimensional photodiode-type elongated photo sensor made of crystalline silicon has been used in a photoelectric conversion device used as a reading means for an optical reading device for image signal processing such as a facsimile machine or a character reading device. However, this photo sensor has disadvantages in that the length of the silicon single crystal that can be produced is limited in terms of size and processing precision, and the yield during production is low. Therefore, when the width of the original to be read is large (for example, an A4 size sheet with a width of 210 mm), the original image is reduced and formed on a photo sensor using a lens system and then read. However, using such a reduction optical system makes it difficult to miniaturize the light receiving section, and because the individual light receiving area (pixel area) cannot be made large, a large amount of light is required to obtain a sufficient signal current. shall be. For this reason, photo sensors as described above are currently used in low-speed type reading devices that require a long reading time or in reading devices that do not require high resolution.
これに対し、最近ではアモルフアスシリコンを
用いたフオトセンサーが提案されている。このフ
オトセンサーは真空堆積法でアモルフアスシリコ
ン薄層を形成することにより作製されるので、大
面積のものや長尺のものが容易に得られる。かく
して、アモルフアスシリコンを用いたフオトセン
サーによれば、原稿の幅が大きい場合にも等倍に
て読取ることができ、密着型のイメージセンサー
が可能となる。これにより読取装置を小型化する
ことができる。 In contrast, recently, a photo sensor using amorphous silicon has been proposed. Since this photo sensor is manufactured by forming a thin layer of amorphous silicon using a vacuum deposition method, one with a large area or one with a long length can be easily obtained. In this way, a photo sensor using amorphous silicon can read the document at the same magnification even when the width of the document is large, making it possible to use a close-contact image sensor. This allows the reading device to be downsized.
ところで、この様な読取装置における駆動方式
としては直接駆動方式とマトリツクス駆動方式と
が提案されている。このうちマトリツクス駆動方
式は駆動ICの数が少なくてすむので、安価に読
取装置を作製することができる。第１図にマトリ
ツクス駆動方式の読取装置の読取部近傍の概略部
分平面図を示し、第２図にその−断面図を示
す。図において、１は基板であり、２は該基板１
上に設けられたアモルフアスシリコン光導電層で
あり、３は共通電極であり、４は個別電極であ
る。各個別電極４が共通電極３と対向させる間隙
部分が各画素部分（即ちセンサー部）に相当す
る。図において、画素は７×５（＝35）個アレイ
状に配列されている。該画素は７個にブロツク化
され、各ブロツクには５個の画素が含まれてい
る。共通電極３は各ブロツク毎に１つ設けられて
いる。また、個別電極４のセンサー部と反対側の
部分には絶縁層５が付されており、該絶縁層５に
はスルーホール６が形成され、該絶縁層５上に設
けられた５本の信号取出し配線７の各々に各ブロ
ツクの１つの個別電極が上記スルーホール部にお
いて接続されている。従つて、共通電極３の７個
の端子と取出し配線の５個の端子とを駆動回路に
接続してマトリツクス駆動を行なうことができ
る。 By the way, as drive methods for such a reading device, a direct drive method and a matrix drive method have been proposed. Among these, the matrix drive method requires fewer drive ICs, so the reading device can be manufactured at low cost. FIG. 1 shows a schematic partial plan view of the vicinity of a reading section of a matrix drive type reading device, and FIG. 2 shows a cross-sectional view thereof. In the figure, 1 is a substrate, 2 is the substrate 1
An overlying amorphous silicon photoconductive layer is provided, 3 is a common electrode and 4 is an individual electrode. The gap portion where each individual electrode 4 faces the common electrode 3 corresponds to each pixel portion (that is, a sensor portion). In the figure, 7×5 (=35) pixels are arranged in an array. The pixels are divided into seven blocks, each block containing five pixels. One common electrode 3 is provided for each block. Further, an insulating layer 5 is attached to a portion of the individual electrode 4 opposite to the sensor section, a through hole 6 is formed in the insulating layer 5, and five signal lines provided on the insulating layer 5 are formed. One individual electrode of each block is connected to each of the lead-out wiring lines 7 at the through-hole portion. Therefore, matrix driving can be performed by connecting the seven terminals of the common electrode 3 and the five terminals of the lead-out wiring to the driving circuit.
このマトリツクス駆動方式によれば上記の如く
駆動回路部分を小型化することができるが、一方
で配線部の構造が複雑となる。第１図及び第２図
においては画素数が35個の場合を例示したが、高
画素密度の長尺フオトセンサーにおいてはこの画
素数がたとえば1728個であり、このため多層の配
線部の構造は極めて複雑なものとなる。 According to this matrix drive method, the drive circuit portion can be miniaturized as described above, but on the other hand, the structure of the wiring portion becomes complicated. In Figures 1 and 2, the case where the number of pixels is 35 is illustrated, but in a long photo sensor with high pixel density, this number of pixels is, for example, 1728, and therefore the structure of the multilayer wiring section is It becomes extremely complex.
従来この種の読取装置においては、第１図及び
第２図に示される如く、同一基板上に読取部とマ
トリツクス化のための多層配線部と形成されてい
たので、その読取手段の製造歩留りは読取部の製
造歩留りと配線部の製造歩留りとを乗じたものに
なる。このため、従来のこの種の読取装置の製造
歩留りはかなり低く、従つて製造コストがかさむ
という難点があつた。 Conventionally, in this type of reading device, as shown in FIGS. 1 and 2, a reading section and a multilayer wiring section for forming a matrix were formed on the same substrate, so the manufacturing yield of the reading means was low. It is the product of the manufacturing yield of the reading section and the manufacturing yield of the wiring section. For this reason, the manufacturing yield of conventional reading devices of this type is quite low, resulting in high manufacturing costs.
本発明は、以上の如き従来技術に鑑み、光学的
読取装置の読取手段の製造歩留りを向上させ読取
装置の製造コスト低減をはかることを目的とす
る。
SUMMARY OF THE INVENTION In view of the above-mentioned prior art, it is an object of the present invention to improve the manufacturing yield of reading means of an optical reading device and reduce the manufacturing cost of the reading device.
本発明によれば、以上の如き目的は、読取部、
駆動回路部、及び該読取部と駆動回路部とを接続
する多層配線部とを有する光学的読取装置におい
て、前記読取部、前記多層配線部、及び前記駆動
回路部とが別々の基板上に形成され、前記読取部
と前記多層配線部とが形成される基板が同一支持
体の同一面上に並列配置されており、且つ前記駆
動回路部が前記多層配線部とフレキシブルな配線
部材を用いて電気的に接続され、前記読取部及び
前記多層配線部の上方に設けられていることを特
徴とする光学的読取装置により達成される。
According to the present invention, the above objects include a reading unit,
In an optical reading device having a drive circuit section and a multilayer wiring section connecting the reading section and the drive circuit section, the reading section, the multilayer wiring section, and the drive circuit section are formed on separate substrates. The substrate on which the reading section and the multilayer wiring section are formed are arranged in parallel on the same surface of the same support, and the drive circuit section is electrically connected to the multilayer wiring section using a flexible wiring member. This is achieved by an optical reading device characterized in that the reading section and the multilayer wiring section are connected to each other and are provided above the reading section and the multilayer wiring section.
以下、図面を参照しながら本発明の実施例を説
明する。
Embodiments of the present invention will be described below with reference to the drawings.
第３図は本発明の光学的読取装置の実施例を示
す概略一部切欠部分斜視図であり、第４図はその
−断面図である。図において、１１は読取装
置の読取手段であり、該読取手段１１には長尺の
第１の基板１２と長尺の第２の基板１３が設けら
れている。第１基板１２の下方にはフアイバーレ
ンズアレイ１４が設けられており、その両側には
LEDアレイ１５が設けられている。第１基板１
２には読取センサー部即ちアモルフアスシリコン
光導電層及び該導電層に接続された共通電極と個
別電曲とが形成されている。一方、第２基板１３
上には第１基板１２の共通電極と個別電極とに接
続された多層配線部が形成されている。この多層
配線部の構造は第１図及び第２図に関し説明した
通りである。第１基板１２上に設けられた読取部
と第２基板１３上に設けられた配線部との電気的
接続はアルミニウムワイヤボンデイング２０によ
りなされている。尚、１６は駆動回路部であり、
該駆動回路部１６は上記配線部と電気的に接続さ
れている。この接続はフレキシブルな配線部とし
ての導電材料を用いて行なうことができる。１７
は読取原稿であり、１８はその送りローラであ
る。 FIG. 3 is a schematic partially cutaway partial perspective view showing an embodiment of the optical reading device of the present invention, and FIG. 4 is a cross-sectional view thereof. In the figure, 11 is a reading means of a reading device, and the reading means 11 is provided with a long first substrate 12 and a long second substrate 13. A fiber lens array 14 is provided below the first substrate 12, and on both sides thereof.
An LED array 15 is provided. First substrate 1
2 is formed with a read sensor section, that is, an amorphous silicon photoconductive layer, a common electrode connected to the conductive layer, and individual electrical bends. On the other hand, the second substrate 13
A multilayer wiring section connected to the common electrode and individual electrodes of the first substrate 12 is formed thereon. The structure of this multilayer wiring section is as explained in connection with FIGS. 1 and 2. Electrical connection between the reading section provided on the first substrate 12 and the wiring section provided on the second substrate 13 is made by aluminum wire bonding 20. In addition, 16 is a drive circuit section,
The drive circuit section 16 is electrically connected to the wiring section. This connection can be made using a conductive material as a flexible wiring section. 17
is the original to be read, and 18 is its feeding roller.
尚、上記実施例においては読取部と配線部との
電気的接続をアルミニウムワイヤボンデイングに
より行なつたが、本発明読取装置におけるこの電
気的接続はその他適宜の手段により行なうことが
でき、ヒートシール、テープキヤリア等のフレキ
シブルな導電材料を用いて行なうことも可能であ
る。 In the above embodiment, the electrical connection between the reading section and the wiring section was made by aluminum wire bonding, but the electrical connection in the reading device of the present invention can be made by any other appropriate means, such as heat sealing, It is also possible to use flexible conductive materials such as tape carriers.
以上の本発明読取装置によれば、読取手段の読
取部と多層配線部、更に駆動回路部とを別々に製
造し、その良品のみを実装することができるの
で、製造効率が良く且つ歩留りが向上し、また読
取部、多層配線部及び駆動回路部の各々を多数個
取りで製造できる。従つて、製品コストを低下せ
しめることができる。更に、本発明読取装置によ
れば、読取部、多層配線部、及び駆動回路部のい
づれかに故障が発生した場合、故障部分のみを基
板毎取替えることにより容易に修復可能である。
加えて、読取部と多層配線部が同一支持体上の同
一面上に並列配置されていることから両者の電気
的接続が容易にしかも安定して行える上、駆動回
路部が読取部及び多層配線部の上方に設けられて
いることから読取装置の小型化が図れる。
According to the above-described reading device of the present invention, the reading section of the reading means, the multilayer wiring section, and the drive circuit section can be manufactured separately, and only the good parts can be mounted, so that the manufacturing efficiency is high and the yield is improved. Furthermore, each of the reading section, multilayer wiring section, and drive circuit section can be manufactured in large numbers. Therefore, product cost can be reduced. Further, according to the reading device of the present invention, if a failure occurs in any one of the reading section, the multilayer wiring section, and the drive circuit section, it can be easily repaired by replacing only the failed portion with the whole board.
In addition, since the reading section and the multilayer wiring section are arranged in parallel on the same surface on the same support, the electrical connection between them can be easily and stably made. Since it is provided above the section, the reading device can be made smaller.
第１図は従来の読取装置の読取部近傍の部分平
面図であり、第２図はその−断面図である。
第３図は本発明読取装置の一部切欠部分斜視図で
あり、第４図はその−断面図である。
１：基板、２：光導電層、３：共通電極、４：
個別電極、５：絶縁層、６：スルーホール、７：
配線、１１：読取手段、１２，１３：基板、１
４：フアイバーレンズアレイ、１５：LEDアレ
イ、１６：駆動回路部、２０：ワイヤボンデイン
グ。
FIG. 1 is a partial plan view of the vicinity of the reading section of a conventional reading device, and FIG. 2 is a sectional view thereof.
FIG. 3 is a partially cutaway perspective view of the reading device of the present invention, and FIG. 4 is a sectional view thereof. 1: Substrate, 2: Photoconductive layer, 3: Common electrode, 4:
Individual electrode, 5: Insulating layer, 6: Through hole, 7:
Wiring, 11: Reading means, 12, 13: Board, 1
4: Fiber lens array, 15: LED array, 16: Drive circuit section, 20: Wire bonding.
Claims (1)
路部とを接続する多層配線部とを有する光学的読
取装置において、 前記読取部、前記多層配線部、及び前記駆動回
路部とが別々の基板上に形成され、前記読取部と
前記多層配線部とが形成される基板が同一支持体
の同一面上に並列配置されており、且つ前記駆動
回路部が前記多層配線部とフレキシブルな配線部
材を用いて電気的に接続され、前記読取部及び前
記多層配線部の上方に設けられていることを特徴
とする光学的読取装置。[Scope of Claims] 1. An optical reading device having a reading section, a driving circuit section, and a multilayer wiring section connecting the reading section and the driving circuit section, comprising: the reading section, the multilayer wiring section, and the driving circuit section. The circuit section is formed on separate substrates, the substrates on which the reading section and the multilayer wiring section are formed are arranged in parallel on the same surface of the same support, and the drive circuit section is formed on the multilayer wiring section. An optical reading device, characterized in that the optical reading device is electrically connected to the reading portion and the multilayer wiring portion using a flexible wiring member, and is provided above the reading portion and the multilayer wiring portion.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59074910A JPS60218871A (en) | 1984-04-16 | 1984-04-16 | Optical reader |
| US06/718,338 US4675534A (en) | 1984-04-16 | 1985-04-01 | Optical reader with two substrates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59074910A JPS60218871A (en) | 1984-04-16 | 1984-04-16 | Optical reader |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60218871A JPS60218871A (en) | 1985-11-01 |
| JPH0343789B2 true JPH0343789B2 (en) | 1991-07-03 |
Family
ID=13561011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59074910A Granted JPS60218871A (en) | 1984-04-16 | 1984-04-16 | Optical reader |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60218871A (en) |
-
1984
- 1984-04-16 JP JP59074910A patent/JPS60218871A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60218871A (en) | 1985-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4675534A (en) | Optical reader with two substrates | |
| JPS6344759A (en) | Photoelectric conversion device | |
| EP0297413A2 (en) | Photoelectric conversion device | |
| US4772951A (en) | Solid state image sensor with cell array of amorphous semiconductor photoelectric converting elements | |
| US4792671A (en) | Photosensor array having grouped electrodes | |
| JPS60218968A (en) | Optical reader | |
| JPH0343789B2 (en) | ||
| JPS60218967A (en) | Optical reader | |
| US4691242A (en) | Contact type image sensor having multiple common electrodes to provide increased pixel density | |
| JPH11136438A (en) | Image sensor and information processor using the same | |
| JPH0683335B2 (en) | Photoelectric conversion device | |
| JP2707871B2 (en) | Electronic device and manufacturing method thereof | |
| JPS5957563A (en) | Solid-state linear image sensor | |
| JPS61184869A (en) | Image sensor | |
| JP3273670B2 (en) | Solid-state imaging device | |
| JPH024147B2 (en) | ||
| JPH01184865A (en) | Contact type image sensor | |
| JPS60119165A (en) | Production of one-dimensional image sensor | |
| JP2523880B2 (en) | Contact image sensor | |
| JPH01276758A (en) | Image reading device | |
| JPS60218869A (en) | Photosensor array | |
| JPH04373250A (en) | Long sized close contact type image sensor | |
| JPS621357A (en) | Reader | |
| JPH0324823B2 (en) | ||
| JPH0744026Y2 (en) | Image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |