JPH0342512B2 - - Google Patents
Info
- Publication number
- JPH0342512B2 JPH0342512B2 JP59109486A JP10948684A JPH0342512B2 JP H0342512 B2 JPH0342512 B2 JP H0342512B2 JP 59109486 A JP59109486 A JP 59109486A JP 10948684 A JP10948684 A JP 10948684A JP H0342512 B2 JPH0342512 B2 JP H0342512B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- metal
- package
- semiconductor chip
- bottom plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000007788 liquid Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000000919 ceramic Substances 0.000 claims description 19
- 239000003507 refrigerant Substances 0.000 claims description 8
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000009835 boiling Methods 0.000 description 20
- 238000001816 cooling Methods 0.000 description 16
- 238000005219 brazing Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 239000002826 coolant Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- VHHHONWQHHHLTI-UHFFFAOYSA-N hexachloroethane Chemical compound ClC(Cl)(Cl)C(Cl)(Cl)Cl VHHHONWQHHHLTI-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、IC、LSIなどの半導体チツプのパツ
ケージに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to packages for semiconductor chips such as ICs and LSIs.
IC、LSIチツプはますます高集積化と高密度化
が図られており、そのために使用時でのチツプの
発熱が大きくなり冷却を考慮しなくてはいけな
い。 IC and LSI chips are becoming increasingly highly integrated and densely packed, which means that they generate more heat during use, and cooling must be taken into consideration.
従来の技術
半導体チツプを収容するパツケージとしてメタ
ルタイプ、セラミツクタイプ、サーデイプタイプ
あるいはプラスチツクタイプのパツケージが広く
使用されている（日本マイクロエレクトロニクス
協会編：「IC化実装技術」第137頁、図6.3、1980
年、(株)工業調査会、参照）。しかしながら、メタ
ルタイプ、セラミツクタイプおよびサーデイプタ
イプのパツケージでは半導体チツプがセラミツク
基体上に搭載されており、また、プラスチツクタ
イプのパツケージでは半導体チツプがプラスチツ
ク（合成樹脂）に被包されているために、これか
ら材料の熱伝導体の低さ（高い内部熱抵抗）によ
つて放熱効果は低い。Conventional technology Metal type, ceramic type, ceramic type, or plastic type packages are widely used to house semiconductor chips (edited by Japan Microelectronics Association: "IC Mounting Technology", p. 137, Figure 6.3). , 1980
2003, Kogyo Research Association Co., Ltd., reference). However, in metal-type, ceramic-type, and ceramic-type packages, the semiconductor chip is mounted on a ceramic base, and in plastic-type packages, the semiconductor chip is encapsulated in plastic (synthetic resin). , the heat dissipation effect is low due to the low thermal conductivity of the material (high internal thermal resistance).
そこで、半導体チツプの放熱を主に考慮するな
らば、複数の半導体チツプをそのまま直接に回路
基板に取付け、これらチツプがフルオロカーボ
ン、フレオン（商品名）などの低沸点の冷却媒体
中に浸漬されるならば冷却効果は非常に高い（例
えば、特開昭48−17275号公報参照）。しかしなが
ら、この場合には、半導体チツプの取扱い（すな
わちパツケージなしの半導体チツプを回路基板上
に実装し、冷却媒体中に浸漬するまでの過程）
は、半導体チツプの機械的強度が低く、また、著
しくチツプの汚染をきらうために難しい。 Therefore, if the heat dissipation of semiconductor chips is to be considered mainly, multiple semiconductor chips may be directly attached to a circuit board, and these chips may be immersed in a low boiling point cooling medium such as fluorocarbon or Freon (trade name). The cooling effect is very high (for example, see Japanese Patent Application Laid-Open No. 17275/1983). However, in this case, the handling of the semiconductor chip (i.e., the process from mounting the semiconductor chip without a package on a circuit board to immersing it in a cooling medium)
This method is difficult because the mechanical strength of the semiconductor chip is low and contamination of the chip is extremely important.
発明が解決しようとする問題点
発熱する半導体チツプを収容したパツケージの
内部熱抵抗を下げる（すなわち、パツケージ材料
の熱伝導率を高める）ことおよび冷却効果の高い
沸騰冷却を採用することによつてパツケージの放
熱効率（すなわち、冷却効率）を高めるのが、本
発明が解決しようとする問題点である。Problems to be Solved by the Invention By lowering the internal thermal resistance of the package containing the heat-generating semiconductor chip (that is, by increasing the thermal conductivity of the package material) and by employing boiling cooling, which has a high cooling effect. The problem to be solved by the present invention is to increase the heat dissipation efficiency (that is, cooling efficiency) of.
問題点を解決するための手段
上述の問題点が、半導体素子パツケージの金属
底板上に半導体素子チツプがろう付けされてお
り、かつ該半導体素子パツケージジの内部にフル
オロカーボンまたはハロフルオロカーボンの冷却
媒体液が封入されている液体封入型パツケージに
おいて、前記液体封入型パツケージはセラミツク
枠と、金属底板と、金属蓋とからなり、前記セラ
ミツク枠はその底面に前記金属板がそしてその上
面に前記金属蓋がろう付けされ、かつ該セラミツ
ク枠はその外側側面にリードが設けられかつその
内部に内側でワイヤボンデイング部となる配線層
を有し、前記半導体素子チツプは該ワイヤボンデ
イング部とワイヤボンデイングされ、および前記
金属底板および金属蓋がモリブデン、タングステ
ンまたはFe・Ni・Co系低熱膨張合金で作られて
いることを特徴とする液体封入型パツケージを提
供することによつて解決される。Means for Solving the Problem The above-mentioned problem is solved by the semiconductor chip being soldered onto the metal bottom plate of the semiconductor chip package, and a fluorocarbon or halofluorocarbon coolant liquid being sealed inside the semiconductor chip package. In the liquid-filled package, the liquid-filled package includes a ceramic frame, a metal bottom plate, and a metal lid, and the ceramic frame has the metal plate on its bottom surface and the metal lid on its top surface by brazing. and the ceramic frame is provided with leads on its outer side surface and has a wiring layer therein which becomes a wire bonding part, the semiconductor element chip is wire bonded to the wire bonding part, and the metal bottom plate is wire bonded to the wire bonding part. The problem is solved by providing a liquid-filled package characterized in that the metal lid is made of molybdenum, tungsten, or a low thermal expansion alloy based on Fe.Ni.Co.
作 用
発熱する半導体チツプをパツケージの金属底板
にろう付けしているので、金属は熱抵抗が小さく
かつ熱伝導率が高いためにこの金属底板へ容易に
熱が伝わる。また、半導体チツプの熱は沸騰冷却
媒体液にも放熱され、媒体液に伝えられた熱は自
然対流および沸騰熱伝達により金属蓋へ伝わる。
このパツケージ内での沸騰冷却により半導体チツ
プは沸点よりも大きく温度が上昇することのない
ように冷却される。そして、金属底板および金属
蓋が空冷されるかあるいは別の化学沸騰冷却媒体
液中に浸漬されて沸騰冷却されるので、パツケー
ジの冷却効率が良い。Function: Since the heat-generating semiconductor chip is brazed to the metal bottom plate of the package, heat is easily transferred to the metal bottom plate because metal has low thermal resistance and high thermal conductivity. Further, the heat of the semiconductor chip is also radiated to the boiling cooling medium liquid, and the heat transferred to the medium liquid is transferred to the metal lid by natural convection and boiling heat transfer.
This boiling cooling within the package cools the semiconductor chip so that its temperature does not rise above its boiling point. Since the metal bottom plate and the metal lid are air-cooled or immersed in another chemical boiling coolant liquid for boiling cooling, the cooling efficiency of the package is good.
実施例
以下、添付図面を参照して本発明の実施例をよ
り詳しく説明する。Embodiments Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings.
第１図に本発明に係る液体封入型パツケージの
概略断面を示す。 FIG. 1 shows a schematic cross section of a liquid-filled package according to the present invention.
本発明に係るパツケージ１は、セラミツク枠２
と、金属底板３と、金属蓋４とからなり、金属底
板３はろう材５によつてそして金属蓋４はろう材
６によつてセラミツク枠２のメタライズ層にろう
付けされている。半導体チツプ７が金属底板３に
ろう材８によつて取付けられており、そして、パ
ツケージ１の内部空間に半導体チツプ７を浸漬す
ることになる低沸点冷却媒体液９が封入されてい
る。 A package 1 according to the present invention includes a ceramic frame 2
, a metal bottom plate 3, and a metal lid 4. The metal bottom plate 3 is brazed to the metallized layer of the ceramic frame 2 by a brazing material 5, and the metal lid 4 is brazed to a metallized layer of the ceramic frame 2 by a brazing material 6. A semiconductor chip 7 is attached to a metal bottom plate 3 by a brazing filler metal 8, and a low boiling point coolant liquid 9 is sealed in the interior space of the package 1, in which the semiconductor chip 7 is immersed.
本発明に係る液体封入型パツケージが次のよう
にして組立てられる。 A liquid-filled package according to the present invention is assembled as follows.
まず、金属底板３および金属蓋４を半導体チツ
プ７のシリコンおよびセラミツク枠２の熱膨張率
に近い熱膨張率であるモリブデン、タングステ
ン、Fe・Ni・Co系低熱膨張合金などで用意す
る。金属底板３をセラミツク枠２のメタライズ層
にろう材５（例えば、Au−Snはんだ又はPb−Sn
はんだ）によつてろう付けする。次に、金属底板
３上にIC、LSIなどの半導体チツプ７をAu−Sn
はんだなどのろう材８でダイボンデイングする。
このチツプ７とセラミツク枠２での配線層とをワ
イヤボンデイングによるワイヤ１０で接続する。
この配線層はセラミツク枠２の外側に取付けられ
ているリード１１につながつている。 First, the metal bottom plate 3 and the metal lid 4 are prepared from molybdenum, tungsten, Fe/Ni/Co based low thermal expansion alloys, etc., which have a thermal expansion coefficient close to that of the silicon of the semiconductor chip 7 and the ceramic frame 2. A brazing material 5 (for example, Au-Sn solder or Pb-Sn solder) is attached to the metal bottom plate 3 to the metallized layer of the ceramic frame 2.
solder). Next, a semiconductor chip 7 such as an IC or LSI is placed on the metal bottom plate 3 using Au-Sn.
Die bonding is performed using a brazing material 8 such as solder.
This chip 7 and the wiring layer in the ceramic frame 2 are connected by wires 10 by wire bonding.
This wiring layer is connected to a lead 11 attached to the outside of the ceramic frame 2.
次に、低沸点冷却媒体液９であるフルオロカー
ボン（C6F14、C7F16、C8F18など）あるいはハロ
フルオロカーボン、六塩化エタン（フレオン−
113：商品名）などをパツケージ１の内部に入れ
ている。この冷媒液９はその沸点が50℃以下であ
るのが好ましく、沸点が低いほど冷却効果も大き
いが、パツケージ内部圧力が上昇することになる
ので、沸点は30ないし60℃であるのが望ましい。
また、封入する冷媒液９の量は、半導体チツプ７
を完全に浸漬しかつ金属蓋４をしたときにパツケ
ージ内部空間の10ないし20体積％の空間１２が残
る量即ち、80〜90体積％である。この空間１２が
全くないと、冷媒液９の熱膨張によつてパツケー
ジ１の気密封止を破壊する損傷が発生する可能性
がある。 Next, fluorocarbon (C 6 F 14 , C 7 F 16 , C 8 F 18 , etc.), halofluorocarbon, hexachloroethane (freon-
113:Product name) etc. are placed inside package 1. The boiling point of this refrigerant liquid 9 is preferably 50°C or less. The lower the boiling point, the greater the cooling effect, but since this increases the internal pressure of the package, the boiling point is preferably 30 to 60°C.
Also, the amount of refrigerant liquid 9 to be sealed is
When the package is completely immersed and the metal lid 4 is closed, a space 12 of 10 to 20% by volume of the internal space of the package remains, that is, 80 to 90% by volume. If this space 12 is completely absent, damage may occur due to thermal expansion of the refrigerant liquid 9 that destroys the hermetic seal of the package 1.
次に、セラミツク枠２のメタライズ層に金属蓋
４をろう材５と同じろう材６によつてろう付けし
て気密封止する。そして、セラミツク枠２のリー
ド１１を所定の回路基板（図示せず）に取付け
る。 Next, a metal lid 4 is brazed to the metallized layer of the ceramic frame 2 using the same brazing filler metal 6 as the brazing filler metal 5 for airtight sealing. Then, the leads 11 of the ceramic frame 2 are attached to a predetermined circuit board (not shown).
このようにし得られたパツケージ１（第１図）
の半導体装置を作動させると、半導体チツプ７が
発熱し、その熱がろう材８を通して金属底板３
へ、同時に沸騰冷却媒体液９へ伝達される。ま
ず、この冷媒液９によつてチツプ７は冷却され、
冷媒液９がその沸点近くの温度になると、チツプ
７が沸点以上になつたときに気泡１３が発生して
気化熱により冷媒液９が沸点より高くなることは
なく、したがつてチツプ７も沸点までに冷却（沸
騰冷却）される。そして、気泡１３の蒸気が空間
１２内で金属蓋４に熱を伝えると凝縮して液体と
なり滴下する。金属底板３および金属蓋４は空冷
方式、液冷方式、沸騰冷却方式などの公知の冷却
方法によつて冷却され、これらは金属で熱伝導率
が高いので放熱効率が良い。 Package 1 thus obtained (Fig. 1)
When the semiconductor device is operated, the semiconductor chip 7 generates heat, and the heat passes through the brazing material 8 to the metal bottom plate 3.
and simultaneously to the boiling coolant liquid 9. First, the chip 7 is cooled by this refrigerant liquid 9,
When the refrigerant liquid 9 reaches a temperature close to its boiling point, bubbles 13 are generated when the temperature of the chips 7 rises above the boiling point, and the heat of vaporization prevents the refrigerant liquid 9 from rising above the boiling point, so that the chips 7 also reach the boiling point. It is cooled down (boiling cooling). Then, when the vapor in the bubbles 13 transfers heat to the metal lid 4 within the space 12, it condenses and becomes liquid and drips. The metal bottom plate 3 and the metal lid 4 are cooled by a known cooling method such as an air cooling method, a liquid cooling method, or a boiling cooling method, and since these are metals and have high thermal conductivity, they have good heat dissipation efficiency.
発明の効果
上述したように本発明に係る液体封入型パツケ
ージは、半導体チツプからの熱をろう材および金
属底板を通して放熱しかつパツケージ内での沸騰
冷却によつても除去するのでパツケージとしての
冷却効率は高い。Effects of the Invention As described above, the liquid-filled package according to the present invention radiates heat from the semiconductor chip through the brazing material and the metal bottom plate, and also removes it by boiling cooling within the package, so the cooling efficiency as a package is improved. is expensive.
第１図は本発明に係る液体封入型パツケージの
概略断面図である。
１……パツケージ、２……セラミツク枠、３…
…金属底板、４……金属蓋、５，６，８……ろう
材、７……半導体チツプ、９……低沸点冷却媒体
液、１２……空間、１３……気泡。
FIG. 1 is a schematic cross-sectional view of a liquid-filled package according to the present invention. 1...Package, 2...Ceramic frame, 3...
. . . Metal bottom plate, 4 .
Claims (1)
素子チツプがろう付けされており、かつ該半導体
素子パツケージの内部にフルオロカーボンまたは
ハロフルオロカーボンの冷媒液が封入されている
液体封入型パツケージにおいて、前記液体封入型
パツケージ１はセラミツク枠２と、金属底板３
と、金属蓋４とからなり、前記セラミツク枠２は
その底面に前記金属板３がそしてその上面に前記
金属蓋４がろう付けされ、かつ該セラミツク枠２
はその外側側面にリード１１が設けられかつその
内部に内側でワイヤボンデイング部となる配線層
を有し、前記半導体素子チツプ７は該ワイヤボン
デイング部とワイヤ１０で接続され、および前記
金属底板３および金属蓋４がモリブデン、タング
ステンまたはFe・Ni・Co系低熱膨張合金で作ら
れていることを特徴とする液体封入型パツケー
ジ。 ２ 封入する前記冷媒液９が前記液体封入型パツ
ケージ１の内部空間の90〜80体積％を占めている
ことを特徴とする特許請求の範囲第１項記載の液
体封入型パツケージ。[Scope of Claims] 1. A liquid-filled package in which a semiconductor chip is brazed onto a metal bottom plate of a semiconductor chip package, and a fluorocarbon or halofluorocarbon refrigerant liquid is sealed inside the semiconductor chip package. , the liquid-filled package 1 includes a ceramic frame 2 and a metal bottom plate 3.
and a metal lid 4, the ceramic frame 2 has the metal plate 3 on its bottom surface and the metal lid 4 on its top surface, and the ceramic frame 2
has a lead 11 on its outer side surface and a wiring layer which becomes a wire bonding part on the inside thereof, the semiconductor element chip 7 is connected to the wire bonding part by a wire 10, and the metal bottom plate 3 and A liquid-filled package characterized in that a metal lid 4 is made of molybdenum, tungsten, or a low thermal expansion alloy based on Fe, Ni, and Co. 2. The liquid-filled package according to claim 1, wherein the refrigerant liquid 9 occupies 90 to 80% by volume of the internal space of the liquid-filled package 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10948684A JPS60254641A (en) | 1984-05-31 | 1984-05-31 | Liquid-sealed-in package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10948684A JPS60254641A (en) | 1984-05-31 | 1984-05-31 | Liquid-sealed-in package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60254641A JPS60254641A (en) | 1985-12-16 |
| JPH0342512B2 true JPH0342512B2 (en) | 1991-06-27 |
Family
ID=14511462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10948684A Granted JPS60254641A (en) | 1984-05-31 | 1984-05-31 | Liquid-sealed-in package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60254641A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0598902A4 (en) * | 1992-02-26 | 1995-06-28 | Seiko Epson Corp | Additional electronic device and electronic system. |
| EP0604650A4 (en) * | 1992-02-26 | 1995-06-28 | Seiko Epson Corp | Additional electronic device and electronic system. |
| US8213431B2 (en) | 2008-01-18 | 2012-07-03 | The Boeing Company | System and method for enabling wireless real time applications over a wide area network in high signal intermittence environments |
| EP0608418B1 (en) | 1992-05-20 | 1998-11-04 | Seiko Epson Corporation | Cartridge for electronic apparatus |
| US6339191B1 (en) | 1994-03-11 | 2002-01-15 | Silicon Bandwidth Inc. | Prefabricated semiconductor chip carrier |
| US5821457A (en) * | 1994-03-11 | 1998-10-13 | The Panda Project | Semiconductor die carrier having a dielectric epoxy between adjacent leads |
| DE10129006B4 (en) * | 2001-06-15 | 2009-07-30 | Conti Temic Microelectronic Gmbh | Electronic module |
| US7157793B2 (en) * | 2003-11-12 | 2007-01-02 | U.S. Monolithics, L.L.C. | Direct contact semiconductor cooling |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5875860A (en) * | 1981-10-30 | 1983-05-07 | Fujitsu Ltd | Liquid-cooled semiconductor device |
-
1984
- 1984-05-31 JP JP10948684A patent/JPS60254641A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5875860A (en) * | 1981-10-30 | 1983-05-07 | Fujitsu Ltd | Liquid-cooled semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60254641A (en) | 1985-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |