JPH0338026A - Synchrotron radiation aligner - Google Patents
Synchrotron radiation alignerInfo
- Publication number
- JPH0338026A JPH0338026A JP1172778A JP17277889A JPH0338026A JP H0338026 A JPH0338026 A JP H0338026A JP 1172778 A JP1172778 A JP 1172778A JP 17277889 A JP17277889 A JP 17277889A JP H0338026 A JPH0338026 A JP H0338026A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- mirror
- synchrotron radiation
- aligner
- extraction window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005469 synchrotron radiation Effects 0.000 title claims description 24
- 238000000605 extraction Methods 0.000 claims description 51
- 238000002834 transmittance Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims 2
- 229910052790 beryllium Inorganic materials 0.000 abstract description 14
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052734 helium Inorganic materials 0.000 description 19
- 239000001307 helium Substances 0.000 description 19
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 19
- 238000003860 storage Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
Landscapes
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、高密度集積回路の製造、材料等の分析にシン
クロトロン放射光（以下放射光と呼ぶ）を利用する際に
、Ｘ線を取り出すビームラインに揺動可能なＸＢ反射ミ
ラーとＸ線取り出し窓を有する放射光露光装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is directed to the use of X-rays when synchrotron radiation (hereinafter referred to as synchrotron radiation) is used for manufacturing high-density integrated circuits, analyzing materials, etc. The present invention relates to a synchrotron radiation exposure apparatus having a swingable XB reflection mirror and an X-ray extraction window in an extraction beam line.
（従来の技術）
最近、高出力のＸ線が得られるＸ線発生装置として、放
射光が注目され、大気中で集積回路の微細パターン露光
に利用されようとしている。(Prior Art) Recently, synchrotron radiation has attracted attention as an X-ray generator capable of generating high-output X-rays, and is being used to expose fine patterns of integrated circuits in the atmosphere.
しかし、放射光は第２図に示すようにＸ線の縦方向の広
がりが１ｍｒａｄであり、たとえば、１０ｍのビームラ
インではマスク面上の露光エリアは１ｃｍ幅となるのみ
である。垂直方向にＸ線を広げて露光エリアを大きくす
るためには、■ξミラー動によるエリアの拡大、■アラ
イナ上のマスクとウェハを一定の速度で揺動する方法、
■蓄積リング内でビームを揺動する方法等が考えられて
いる。このような３つの方法のうちで現在は、露光エリ
アの拡大にはミラー揺動による方法が一般的に良く使用
されている。しかし、ミラーにより露光エリアを拡大し
てもＸ線取り出し窓がアライナのマスク近傍に位置して
いるため、Ｘ線取り出し窓を薄くすることができず、Ｘ
線の取り出し効率が悪いのが現状である。However, as shown in FIG. 2, the vertical spread of synchrotron radiation is 1 mrad, and for example, in a 10 m beam line, the exposure area on the mask surface is only 1 cm wide. In order to enlarge the exposure area by spreading the X-rays in the vertical direction, there are two methods: ■ Enlarging the area by ξ mirror movement, ■ Swinging the mask and wafer on the aligner at a constant speed,
■Methods such as swinging the beam within the storage ring are being considered. Of these three methods, currently, the method using mirror swinging is commonly used to enlarge the exposure area. However, even if the exposure area is expanded using a mirror, the X-ray extraction window is located near the aligner mask, so it is not possible to make the X-ray extraction window thinner.
The current situation is that the wire extraction efficiency is poor.
第３図はＸ線露光に使用されるビームラインの構成の一
例である。ｌは蓄積リング、２は放射光、３はＸ線反射
ミラー、４はミラーの位置決めと１１動するくラー駆動
機構、５はＸ線取り出し窓、６は露光用アライナ、７は
マスク、８はミラーチャンバ、９はビームライン、ｌＯ
は真空へローズ、１１はミラー駆動機構４とごラーを連
結する連結棒、１２はミラーは動するためのミラー揺動
棒である。放射光露光装置は、蓄積リング１ ％ ｌジ
−チャンバ８、Ｘ線取り出し窓５、等から成るビームラ
イン９、そして、マスク７をアライメントする露光用ア
ライナ６から構成されている。FIG. 3 shows an example of the configuration of a beam line used for X-ray exposure. 1 is a storage ring, 2 is a synchrotron radiation beam, 3 is an X-ray reflecting mirror, 4 is a mirror positioning mechanism and a roller drive mechanism that moves 11, 5 is an X-ray extraction window, 6 is an exposure aligner, 7 is a mask, and 8 is a Mirror chamber, 9 beam line, lO
11 is a connecting rod connecting the mirror drive mechanism 4 and the mirror, and 12 is a mirror swinging rod for moving the mirror. The radiation exposure apparatus is composed of a beam line 9 consisting of a storage ring 1% l g-chamber 8, an X-ray extraction window 5, etc., and an exposure aligner 6 for aligning a mask 7.
蓄積リング１から出た放射光２はＸ線反射ミラー３で反
射され、Ｘ線反射ミラー３の揺動によって一定の幅で揺
動される。くラーは一般に３軸あるいは６軸駆動ができ
るようになっており、そのうちの１軸が揺動軸となって
いる。いま、６軸駆動の場合、ビームの進行方向成分を
Ｘ、その水平方向直角成分をＹ、上下方向成分をＺ１１
成分の回転をそれぞれα、β、Ｔとすると、α軸がビー
ムの揺動軸となる。一方、蓄積リング１、ミラーチャン
バ８、ビームライン９は１０−’ Ｔｏｒｒの超高真空
となっており、超高真空と大気とを隔てるＸ線取り出し
窓５が必要である。Ｘ線取り出し窓５にはＸ線透過率の
高いベリリウムが一般に用いられている。Ｘ線取り出し
窓５のベリリウムは大気でのＸ線の減衰を少なくするた
め、マスク７の近傍にあり、露光エリアの拡大からその
面積は３０ｍｍ角が要求されている。また、３０４ｓ角
の大きさで１気圧の強度を持たせるためには、１１００
ｕ以上の膜厚が必要である。しかし、膜厚１１００ｕで
は、波長８入でＸ線透過率が５％であり、ベリリウム膜
だけでＸ線強度が１／２０に減衰してしまう（ベリリウ
ム膜以外ではもっと減衰してしまう）。このように、従
来は露光エリア確保の為、大きなベリリウム膜が必要で
あり、上述のような大きなベリリウム膜に超高真空と大
気とを隔てるだけの強度をもたせようとすると膜厚が厚
くなり、Ｘ線透過率が悪くなるため、ある一定以上の露
光エリアをもち十分なＸ線強度をもつ放射光露光装置は
従来なかった。The synchrotron radiation 2 emitted from the storage ring 1 is reflected by the X-ray reflecting mirror 3, and is oscillated in a constant width by the oscillation of the X-ray reflecting mirror 3. A wheeler is generally capable of driving on 3 or 6 axes, one of which is a swing axis. Now, in the case of 6-axis drive, the beam traveling direction component is X, its horizontal direction perpendicular component is Y, and the vertical direction component is Z11.
Letting the rotations of the components be α, β, and T, respectively, the α axis becomes the swing axis of the beam. On the other hand, the storage ring 1, mirror chamber 8, and beam line 9 are in an ultra-high vacuum of 10-' Torr, and an X-ray extraction window 5 is required to separate the ultra-high vacuum from the atmosphere. For the X-ray extraction window 5, beryllium, which has high X-ray transmittance, is generally used. The beryllium of the X-ray extraction window 5 is located near the mask 7 in order to reduce the attenuation of X-rays in the atmosphere, and its area is required to be 30 mm square in order to expand the exposure area. In addition, in order to have a strength of 1 atm with a size of 304s square, 1100
A film thickness of u or more is required. However, with a film thickness of 1100 μ, the X-ray transmittance is 5% at a wavelength of 8, and the X-ray intensity is attenuated to 1/20 by the beryllium film alone (other than the beryllium film attenuates more). In this way, in the past, a large beryllium film was required to secure the exposure area, and if a large beryllium film like the one mentioned above was to have enough strength to separate the ultra-high vacuum from the atmosphere, the film would become thicker. Since the X-ray transmittance deteriorates, there has been no synchrotron radiation exposure apparatus that has an exposure area larger than a certain level and has sufficient X-ray intensity.
（発明が解決しようとする課題）
本発明は、一定以上の露光エリアをもち、ビームライン
でのＸ線の減衰の小さい放射光露光装置を実現しようと
するものである。(Problems to be Solved by the Invention) The present invention aims to realize a synchrotron radiation exposure apparatus that has an exposure area of a certain size or more and has a small attenuation of X-rays at a beam line.
（課題そ解決しようとする手段）
本発明は、Ｘ線を取り出すためのＸ線取り出し窓を帰動
可能なＸ線反射ミラーの直後に設置してＸＭ取り出し窓
の大きさを小さくすることを特徴とする。(Means for Solving the Problem) The present invention is characterized in that an X-ray extraction window for extracting X-rays is installed immediately after a movable X-ray reflecting mirror to reduce the size of the XM extraction window. shall be.
（作用）
Ｘ線反射ミラーの直後にＸ線取り出し窓をもってきたた
め窓を小さくしても十分な露光エリアがとれる。また、
窓が小さいので窓の膜厚を従来より薄くしてＸ線透過率
を向上させても、ミラーチャンバとマスクを圧力的に隔
てるのに十分な膜の強度を得られる。(Function) Since the X-ray extraction window is placed immediately after the X-ray reflection mirror, a sufficient exposure area can be obtained even if the window is made small. Also,
Since the window is small, even if the film thickness of the window is made thinner than before to improve X-ray transmittance, the film can have sufficient strength to pressure-separate the mirror chamber and the mask.
（実施例）
第１図は本発明の実施例の放射光露光装置の構成の一例
であり、ｌは蓄積リング、２は放射光、３はＸ線反射ミ
ラー、４はミラーの位置決めと揺動するミラー駆動機構
、５はＸ線取り出し窓、６は露光用アライナ、７はマス
ク、８！よミラーチャンバ、９はビームライン、１０は
真空ベローズ、１１は逅う−駆動機構とミラーを連結す
る連結棒、１２はミラー揺動棒
ミラー揺動棒、１３はヘリウムパイプである。(Embodiment) Fig. 1 shows an example of the configuration of a synchrotron radiation exposure apparatus according to an embodiment of the present invention, where l is a storage ring, 2 is a synchrotron radiation beam, 3 is an X-ray reflecting mirror, and 4 is mirror positioning and rocking. 5 is an X-ray extraction window, 6 is an exposure aligner, 7 is a mask, 8! 1 is a mirror chamber, 9 is a beam line, 10 is a vacuum bellows, 11 is a connecting rod that connects the drive mechanism and the mirror, 12 is a mirror swing rod, and 13 is a helium pipe.
放射光露光装置は蓄積リングｌとミラーチャンバ８、Ｘ
線取り出し窓５、等から成るビームライン９、そして、
露光用アライナ６から構成されている。Ｘ線取り出し窓
５は一般にＸ線透過率が高く、比較的強度の強いベリリ
ウムが使用されている。蓄積リング１から出た放射光２
はＸ線反射ミラー３で反射される。Ｘ線反射ミラー３は
ミラー駆動機構４と真空ベローズ１０、連結棒１１を介
して連結されており、ごラー駆動機構４によりＸ線が露
光用アライナ６のマスク７上に来るようにＸ線反射ミラ
ー３の位置を調整する。Ｘ線反射ミラー３から出たＸ線
は、そのＸ線反射ミラー３の位置を調整する。Ｘ線反射
ミラー３から出たＸ線は、そのＸ線反射ミラー３の極く
近傍に位置するＸ線取り出し窓５を通り、さらにヘリウ
ムパイプ１３を通って、露光用アライナ６のマスク７上
に到達する。ヘリウムパイプ１３中のヘリウムは１気圧
で、透過率は空気の約２６０倍である。また、Ｘ線反射
ミラー３は業う−帰動棒１２でミラー駆動機構４と接続
されており、ミラー駆動機構４内に持つ揺動機構により
揺動される。このＸ線反射ミラーの揺動によって露光エ
リアが拡大される。本実施例では露光用アライナ６はマ
スク７を含む露光系がヘリウム中にあり、ヘリウム中露
光が可能となっている。いま、第４図はＸ線反射ミラー
３とＸ線取り出し窓５、マスク７の位置関係を示したも
ので、Ｘ線反射ミラー３とマスク７の位置が１ｍとしＸ
線取り出し窓５がＸ線反射ミラー３の中心から３０ｃｍ
の位置にあり、露光位置で３０ｍｍ幅で揺動するとＸ線
取り出し窓５の幅は１０−程度で良いことになる。した
がって、Ｘ線取り出し窓５の大きさは露光エリア３０Ｉ
ＩＩＩ１１角でも１０ａｕａＸ３０ｍｍの大きさで良く
、Ｘ線取り出し窓５すなわちベリリウムの厚さを極力薄
くすることが、可能である。本実施例ではベリリウムの
膜厚を２０ｕＩ１１とし透過率は５０％以上である。な
お、横方向も従来窓よりも小さくできるので従来と同じ
露光エリアであれば、横方向の大きさも３０．ｍｍ以下
の大きさでよい。このようにＸ線取り出し窓５のへリリ
ウムの膜厚を薄くすることにより、ビームライン９での
Ｘ線透過率が高くなり、Ｘ線取り出し効率が向上する。The synchrotron radiation exposure device includes a storage ring l and mirror chambers 8 and
A beam line 9 consisting of a line extraction window 5, etc., and
It is composed of an aligner 6 for exposure. The X-ray extraction window 5 is generally made of beryllium, which has a high X-ray transmittance and is relatively strong. Synchrotron radiation 2 emitted from storage ring 1
is reflected by the X-ray reflecting mirror 3. The X-ray reflecting mirror 3 is connected to a mirror drive mechanism 4 via a vacuum bellows 10 and a connecting rod 11. Adjust the position of mirror 3. The X-rays emitted from the X-ray reflecting mirror 3 adjust the position of the X-ray reflecting mirror 3. The X-rays emitted from the X-ray reflection mirror 3 pass through the X-ray extraction window 5 located very close to the X-ray reflection mirror 3, and then pass through the helium pipe 13 and onto the mask 7 of the exposure aligner 6. reach. The helium in the helium pipe 13 has a pressure of 1 atm and a permeability that is approximately 260 times that of air. Further, the X-ray reflecting mirror 3 is connected to a mirror drive mechanism 4 through a return rod 12, and is swung by a swing mechanism provided within the mirror drive mechanism 4. The exposure area is expanded by this swinging of the X-ray reflecting mirror. In this embodiment, the exposure aligner 6 has an exposure system including a mask 7 in helium, making it possible to perform exposure in helium. Now, Fig. 4 shows the positional relationship between the X-ray reflection mirror 3, the X-ray extraction window 5, and the mask 7.
The radiation extraction window 5 is 30 cm from the center of the X-ray reflection mirror 3.
If the X-ray extraction window 5 is located at the position , and swings by a width of 30 mm at the exposure position, the width of the X-ray extraction window 5 may be about 10 mm. Therefore, the size of the X-ray extraction window 5 is the exposure area 30I.
The size of the X-ray extraction window 5, that is, the thickness of the beryllium, can be made as thin as possible since the size of the X-ray extraction window 5, that is, the thickness of the beryllium, can be made as thin as possible. In this example, the beryllium film thickness is 20 μI11, and the transmittance is 50% or more. In addition, since the horizontal direction can also be made smaller than conventional windows, if the exposure area is the same as conventional windows, the horizontal size will also be 30. The size may be less than mm. By reducing the helium film thickness of the X-ray extraction window 5 in this manner, the X-ray transmittance at the beam line 9 is increased, and the X-ray extraction efficiency is improved.
もちろん、ヘリウムパイプ１３の中は露光用アライナ６
が減圧ヘリウム中で使用可能な装置であれば、減圧ヘリ
ウムでも良く、さらにＸ線取り出し効率の向上が望める
。また、減圧ヘリウムとすることでＸ線取り出し窓５か
らリークする可能性も減少し安定なＸ線の取り出しが可
能である。Ｘ線取り出し窓５にベリリウムの金属膜を中
心に述べてきたが、ＳｉＮ膜、ＳｉＣ膜、ＢＮ膜等の無
機膜、ポリイミド、ポリエステル等の有機膜でも同様で
ある。Of course, inside the helium pipe 13 is the exposure aligner 6.
As long as the device can be used in reduced pressure helium, reduced pressure helium may be used, and further improvement in X-ray extraction efficiency can be expected. Further, by using reduced pressure helium, the possibility of leakage from the X-ray extraction window 5 is reduced, and stable extraction of X-rays is possible. Although we have mainly described a metal film of beryllium for the X-ray extraction window 5, the same applies to inorganic films such as SiN film, SiC film, and BN film, and organic films such as polyimide and polyester.
次に本発明の他の実施例について述べる。Next, other embodiments of the present invention will be described.
第５図は露光用アライナ６が大気中露光装置の場合の実
施例であり、１は蓄積リング、２は放射光、３はＸ線反
射ミラー、４は旦う−の位置決めと揺動するミラー駆動
機構、６はｎ光用アライナ、７はマスク、８はミラーチ
ャンバ、９はビームライン、１３はヘリウムパイプ、１
４は第−Ｘ線取り出し窓、１５は第二Ｘ線取り出し窓で
ある。FIG. 5 shows an embodiment in which the exposure aligner 6 is an atmospheric exposure device, where 1 is a storage ring, 2 is a synchrotron radiation beam, 3 is an X-ray reflecting mirror, and 4 is a mirror for positioning and swinging. Drive mechanism, 6 is an n-light aligner, 7 is a mask, 8 is a mirror chamber, 9 is a beam line, 13 is a helium pipe, 1
4 is a first X-ray extraction window, and 15 is a second X-ray extraction window.
放射光露光装置は前の実施例と同様に蓄積リング１とミ
ラーチャンバ７、Ｘ線取り出し窓１４１５、ヘリウムパ
イプ１３等から成るビームライン９、そして、露光用ア
ライナ６から構成されている。蓄積リング１から出た放
射光２はＸ線反射ミラー３で反射し、Ｘ線反射ミラー３
の近傍に位置された第一のＸ線取り出し窓１４を通り、
ヘリウムパイプ１３、第二Ｘ線取り出し窓１５を通って
アライナ６のマスク７上に到達して露光に寄与される。The synchrotron radiation exposure apparatus is composed of a storage ring 1, a mirror chamber 7, an X-ray extraction window 1415, a beam line 9 consisting of a helium pipe 13, etc., and an exposure aligner 6, as in the previous embodiment. The synchrotron radiation 2 emitted from the storage ring 1 is reflected by the X-ray reflecting mirror 3, and
passing through the first X-ray extraction window 14 located near the
The light passes through the helium pipe 13 and the second X-ray extraction window 15, reaches the mask 7 of the aligner 6, and contributes to exposure.
蓄積リングｌやビームライン１３は１０−９Ｔｏｒｒの
超高真空となっており、露光用アライナ６は大気中にあ
る。１Ｏ−９７ｏｒｒの超高真空と大気とはＸ線取り出
し窓１４１５で仕切られている。第−Ｘ線取り出し窓１
４と第二Ｘ線取り出し窓１５の間はヘリウムパイプ１３
で接続され、ヘリウムパイプ１３は１気圧のＸ線透過率
の高いヘリウムで満たされている。また、第−Ｘ線取り
出し窓１４には比較的強度の高いベリリウムが使用され
、大気圧のかからない第二Ｘ線取り出し窓１５には厚さ
１μｍ程度の有機膜が使用されている。この有機膜は例
えばポリエステルであり、ヘリウムがヘリウムパイプ１
３から逃げない、マスク側から空気が入ってこないもの
であればよい。このように大気圧のかかる第−Ｘ線取り
出し窓１４は、Ｘ線反射ミラー３の近くに位置した構成
となっているため、第１の実施例のＸ線取り出し窓５と
同様にベリリウムの厚さを薄くでき、ビームライン９で
のＸ線取り出し効率を高くすることが可能である。The storage ring 1 and the beam line 13 are in an ultra-high vacuum of 10 -9 Torr, and the exposure aligner 6 is in the atmosphere. The ultra-high vacuum of 10-97 orr and the atmosphere are separated by an X-ray extraction window 1415. No.-X-ray extraction window 1
4 and the second X-ray extraction window 15 is a helium pipe 13.
The helium pipe 13 is filled with 1 atm helium with high X-ray transmittance. Furthermore, beryllium, which has relatively high strength, is used for the first X-ray extraction window 14, and an organic film with a thickness of about 1 μm is used for the second X-ray extraction window 15, which is not exposed to atmospheric pressure. This organic film is made of polyester, for example, and the helium pipe 1
It is fine as long as it does not escape from 3 and does not allow air to enter from the mask side. Since the X-ray extraction window 14, which is exposed to atmospheric pressure, is located near the X-ray reflection mirror 3, the beryllium thickness is similar to the X-ray extraction window 5 of the first embodiment. The X-ray extraction efficiency at the beam line 9 can be increased.
（発明の効果）
以上説明したように、本発明のＸ線反射ミラーの掻く近
傍にＸ線取り出し窓を設けることによって、露光エリア
を確保しながらＸ線取り出し窓の大きさを小さくできる
ため、膜厚を薄くすることが可能であり、Ｘ線取り出し
効率の向上が図れる。(Effects of the Invention) As explained above, by providing the X-ray extraction window in the vicinity of the X-ray reflection mirror of the present invention, the size of the X-ray extraction window can be reduced while securing the exposure area. The thickness can be reduced, and the X-ray extraction efficiency can be improved.
第１図は本発明の実施例の構成図
第２図はシンクロトン放射光の特徴を示す図第３図は従
来技術の構成図
第４図は本発明のくう−とＸ線取り出し窓、マスクの位
置関係を示す図
第５図は本発明の他の実施例を示す図
１・・・蓄積リング
２・・・放射光
３・・・Ｘ線反射ミラー
４・・・ミラー駆動系
５・・・ＸｖＡ取り出し窓
６・・・露光用アライナ
７・・・マスク
８・・・ミラーチャンバ
９・・・ビームライン
１０・・・真空ベローズ
１１・・・連結棒
１２・・・ミラー揺動棒
１３・・・ヘリウムパイプ
４・・・第−Ｘ線取り出し窓
５・・・第二Ｘ線取り出し窓Fig. 1 is a block diagram of an embodiment of the present invention Fig. 2 is a diagram showing the characteristics of synchroton radiation Fig. 3 is a block diagram of a prior art FIG. 5 is a diagram showing the positional relationship of FIG. 1 showing another embodiment of the present invention... Storage ring 2... Synchrotron radiation 3... X-ray reflecting mirror 4... Mirror drive system 5...・XvA extraction window 6 ・Exposure aligner 7 ・Mask 8 ・Mirror chamber 9 ・Beam line 10 ・Vacuum bellows 11 ・Connection rod 12 ・Mirror swing rod 13 ・...Helium pipe 4...Second X-ray extraction window 5...Second X-ray extraction window
Claims (2)
備えた放射光露光装置において、光路上に放射光を反射
するＸ線反射ミラーを有し、Ｘ線反射ミラーを位置決め
揺動するミラー駆動機構があり、Ｘ線反射ミラーとアラ
イナとの間にＸ線取り出し窓を設け、そのＸ線取り出し
窓の揺動方向の寸法が露光エリアの揺動方向の寸法より
小さいことを特徴とする放射光露光装置。(1) A synchrotron radiation exposure apparatus equipped with a chamber containing an X-ray reflection mirror and an aligner, which has an X-ray reflection mirror that reflects synchrotron radiation on the optical path, and a mirror drive mechanism that positions and swings the X-ray reflection mirror. Synchrotron radiation exposure characterized in that an X-ray extraction window is provided between the X-ray reflecting mirror and the aligner, and the dimension of the X-ray extraction window in the swinging direction is smaller than the dimension of the exposure area in the swinging direction. Device.
備えた放射光露光装置において、光路上に放射光を反射
するＸ線反射ミラーを有し、Ｘ線反射ミラーを位置決め
揺動するミラー駆動機構があり、Ｘ線反射ミラーとアラ
イナとの間でビームラインの通過する位置にＸ線透過率
が空気より高いガスを充填させたガスパイプを設け、Ｘ
線反射ミラーに近い側の窓の揺動方向の寸法が露光エリ
アの揺動方向の寸法より小さいことを特徴とする放射光
露光装置。(2) A synchrotron radiation exposure apparatus equipped with a chamber containing an X-ray reflection mirror and an aligner, which has an X-ray reflection mirror that reflects synchrotron radiation on the optical path, and a mirror drive mechanism that positions and swings the X-ray reflection mirror. A gas pipe filled with a gas whose X-ray transmittance is higher than that of air is installed between the X-ray reflecting mirror and the aligner at the position where the beam line passes.
A synchrotron radiation exposure apparatus characterized in that the dimension in the swinging direction of the window on the side closer to the line reflecting mirror is smaller than the dimension in the swinging direction of the exposure area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1172778A JPH0338026A (en) | 1989-07-04 | 1989-07-04 | Synchrotron radiation aligner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1172778A JPH0338026A (en) | 1989-07-04 | 1989-07-04 | Synchrotron radiation aligner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0338026A true JPH0338026A (en) | 1991-02-19 |
Family
ID=15948176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1172778A Pending JPH0338026A (en) | 1989-07-04 | 1989-07-04 | Synchrotron radiation aligner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0338026A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS647620A (en) * | 1987-06-30 | 1989-01-11 | Nec Corp | X-ray aligner |
-
1989
- 1989-07-04 JP JP1172778A patent/JPH0338026A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS647620A (en) * | 1987-06-30 | 1989-01-11 | Nec Corp | X-ray aligner |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4692934A (en) | X-ray lithography system | |
| US7745079B2 (en) | Apparatus for and method of thermophoretic protection of an object in a high-vacuum environment | |
| JPS5826825B2 (en) | X-ray lithography | |
| US4231657A (en) | Light-reflection type pattern forming system | |
| JPS62222634A (en) | X-ray exposure method | |
| JP2691865B2 (en) | Extreme UV reduction projection exposure system | |
| JPH0338026A (en) | Synchrotron radiation aligner | |
| US5581590A (en) | SOR exposure system and method of manufacturing semiconductor devices using same | |
| JP2012114140A (en) | Exposure method and exposure device | |
| JPH0419998A (en) | Radiation takeout window | |
| JP3090708B2 (en) | Synchrotron radiation light irradiation device and X-ray exposure device | |
| JPS59222932A (en) | Semiconductor device | |
| JP6262891B2 (en) | Exposure method | |
| JP3013341B2 (en) | X-ray irradiation optical system and X-ray projection exposure apparatus using the same | |
| JP3058603B2 (en) | Beamline for X-ray lithography | |
| JPH03120714A (en) | X-ray exposure device | |
| JP3254771B2 (en) | X-ray reduction projection exposure apparatus and method | |
| JPH08250420A (en) | Processing method of plurality field in x-ray lithography | |
| JPH0527080B2 (en) | ||
| JP2783973B2 (en) | Method of manufacturing mask for X-ray lithography | |
| JPS62150720A (en) | Surface treatment equipment applying radiation light | |
| JPH0794397A (en) | Lighting device and aligner having same | |
| JPH023000A (en) | X-ray exposure device | |
| JP3069832B2 (en) | Teflon processing equipment | |
| JPH03155116A (en) | Synchrotron radiation light exposure device and its exposure |