JPH0337292A - Organic electroluminescent element - Google Patents
Organic electroluminescent elementInfo
- Publication number
- JPH0337292A JPH0337292A JP1172176A JP17217689A JPH0337292A JP H0337292 A JPH0337292 A JP H0337292A JP 1172176 A JP1172176 A JP 1172176A JP 17217689 A JP17217689 A JP 17217689A JP H0337292 A JPH0337292 A JP H0337292A
- Authority
- JP
- Japan
- Prior art keywords
- group
- atom
- organic
- emitting layer
- organic light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002347 injection Methods 0.000 claims abstract description 24
- 239000007924 injection Substances 0.000 claims abstract description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 10
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 4
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 4
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 4
- 125000004434 sulfur atom Chemical group 0.000 claims abstract description 4
- 125000001424 substituent group Chemical group 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 23
- 150000001721 carbon Chemical group 0.000 abstract description 3
- -1 argonium Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 2
- 229960000956 coumarin Drugs 0.000 description 2
- 235000001671 coumarin Nutrition 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 125000000547 substituted alkyl group Chemical group 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000006283 4-chlorobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1Cl)C([H])([H])* 0.000 description 1
- 125000000590 4-methylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 101100264195 Caenorhabditis elegans app-1 gene Proteins 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000005452 alkenyloxyalkyl group Chemical group 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- 125000005081 alkoxyalkoxyalkyl group Chemical group 0.000 description 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 1
- 125000005138 alkoxysulfonyl group Chemical group 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000005160 aryl oxy alkyl group Chemical group 0.000 description 1
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 125000004966 cyanoalkyl group Chemical group 0.000 description 1
- 125000001316 cycloalkyl alkyl group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000004210 cyclohexylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 1
- 125000005448 ethoxyethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- QZXNDEONRUSYFB-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]-3-methylaniline Chemical compound CC1=CC=CC(NC=2C=CC(=CC=2)C=2C=CC(N)=CC=2)=C1 QZXNDEONRUSYFB-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000006503 p-nitrobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1[N+]([O-])=O)C([H])([H])* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は有機電界発光素子に関するものであり、詳しく
は、有機化合物から威る正孔注入輸送層と発光層との組
合せにより電界をかけて光を放出する薄膜型デバイスに
関するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to an organic electroluminescent device, and more specifically, an electric field is applied by a combination of a hole injection transport layer and a light emitting layer made of an organic compound. This invention relates to a thin film device that emits light.
(従来の技術)
従来、薄膜型の電界発光素子としては、無機材料のII
−Vl族化合物半導体であるZnS、CaS。(Prior art) Conventionally, as a thin film type electroluminescent device, inorganic material II
- ZnS and CaS which are Vl group compound semiconductors.
SrS等に発光中心であるMnや希土類元素(Eu、、
Ce、TbSSm)をドープしたものが一般的であるが
、上記の無機材料から作製した電界発光素子は、l)交
流駆動が必要(〜1kHz)、2)駆動電圧が高い(〜
200V)、3)フルカラー化が困難、4)周辺駆動回
路のコストが高い、という問題点を持っている。Mn and rare earth elements (Eu,...
Electroluminescent devices made from the above-mentioned inorganic materials are generally doped with Ce, TbSSm), but the electroluminescent devices made from the above-mentioned inorganic materials require: 1) alternating current driving (~1 kHz); 2) high driving voltage (~1 kHz);
200V), 3) It is difficult to achieve full color, and 4) The cost of peripheral drive circuits is high.
しかし、近年、上記問題点の改良のため、有機材料を用
いた電界発光素子の開発が行われるようになった0発光
層材料としては以前から知られていたアントラセンやピ
レンなどの他に、シアニン色素(J、Chem、Soc
、、Chem、C。However, in recent years, in order to improve the above problems, electroluminescent devices using organic materials have been developed. Dyes (J, Chem, Soc
, ,Chem,C.
mmun、、557.1985)、ピラゾリン(Mol
、Cryst、 Liq、Cryst、。mmun, 557.1985), pyrazoline (Mol
,Cryst, Liq,Cryst,.
上ユi、355.(1986))、ペリレン(JPn、
J、App 1.Ph)’、S、、 ii、L77
3.1986))、あるいは、クマリン系化合物やテト
ラフェニルブタジェン(特開昭57−51781)など
が報告されており、さらに、発光効率を高めるために電
極からのキャリアーの注入効率の向上を目的として、電
極種類の最適化や、正孔注入輸送層と有機蛍光体からな
る発光層を設ける工夫(特開昭57−51781.59
−194393.63−295695)などが行われて
いる。Upper Yui, 355. (1986)), perylene (JPn,
J, App 1. Ph)', S,, ii, L77
3.1986)), coumarin-based compounds, and tetraphenylbutadiene (Japanese Patent Application Laid-Open No. 57-51781), etc., have been reported, and furthermore, in order to increase luminous efficiency, the injection efficiency of carriers from the electrode is improved. As a result, optimization of the electrode type and creation of a light emitting layer consisting of a hole injection transport layer and an organic phosphor (Japanese Patent Laid-Open No. 57-51781.59
-194393.63-295695), etc.
(発明が解決しようとする課題)
しかしながら、これらの方法で開示されている有機電界
発光素子では発光性能がまだ不十分であり、更なる改良
検討が望まれている。(Problems to be Solved by the Invention) However, the organic electroluminescent devices disclosed by these methods still have insufficient luminous performance, and further improvement studies are desired.
すなわち、本発明の目的は低駆動電圧でも高輝度に発光
させることができる有機発光物質を用いた有機電界発光
素子を提供することにある。That is, an object of the present invention is to provide an organic electroluminescent device using an organic light-emitting substance that can emit light with high brightness even at a low driving voltage.
(課題を解決するための手段)
すなわち、本発明の要旨は、二つの導電層よりなる電極
間に、有機正孔注入輸送層と有機発光層が設けられた有
機電界発光素子において、有機発光層が下記一般式(1
)
(式中、A及びBは置換基を有していてもよい芳香族炭
化水素基を示し、Xは置換基を有していてもよい窒素原
子、硫黄原子、酸素原子、またはセレン原子を示し、Y
は窒素原子、または置換基を有してもよい炭素原子を示
す)
で表される化合物を含有することを特徴とする有機電界
発光素子に存する。(Means for Solving the Problems) That is, the gist of the present invention is to provide an organic electroluminescent element in which an organic hole injection transport layer and an organic light emitting layer are provided between electrodes consisting of two conductive layers. is the following general formula (1
) (In the formula, A and B represent an aromatic hydrocarbon group that may have a substituent, and X represents a nitrogen atom, a sulfur atom, an oxygen atom, or a selenium atom that may have a substituent. Indicate, Y
represents a nitrogen atom or a carbon atom which may have a substituent.
以下、本発明の電界発光素子について添付図面に従い説
明する。第1図は本発明の電界発光素子の構造の例を模
式的に示す断面図であり、lは基板、2a、2bは導電
層、3は正孔注入輸送層、4は発光層を各々表す。Hereinafter, the electroluminescent device of the present invention will be explained with reference to the accompanying drawings. FIG. 1 is a cross-sectional view schematically showing an example of the structure of an electroluminescent device of the present invention, where l represents a substrate, 2a and 2b a conductive layer, 3 a hole injection transport layer, and 4 a light emitting layer. .
基板1は本発明の電界発光素子の支持体となるものであ
り、石英やガラスの板、金属板や金属箔、プラスチック
フィルムやシートなどが用いられるが、ガラス板や、ポ
リエステル、ポリメタアクリレート、ポリカーボネート
、ポリサルホンなどの透明な合成樹脂基板が好ましい。The substrate 1 serves as a support for the electroluminescent device of the present invention, and may be a quartz or glass plate, a metal plate or metal foil, a plastic film or sheet, and may be a glass plate, polyester, polymethacrylate, A transparent synthetic resin substrate such as polycarbonate or polysulfone is preferred.
基板l上には導電層2aが設けられるが、この導電層2
aとしては通常、アルごニウム、金、銀、ニッケル、パ
ラジウム、テルル等の金属、インジウム及び/またはス
ズの酸化物などの金属酸化物やヨウ化銅、カーボンブラ
ック、あるいは、ポリ(3−メチルチオフェン)等の導
電性樹脂などにより構成される。A conductive layer 2a is provided on the substrate l;
a is usually a metal such as argonium, gold, silver, nickel, palladium, tellurium, a metal oxide such as indium and/or tin oxide, copper iodide, carbon black, or poly(3-methyl It is made of conductive resin such as thiophene).
導電層の形成は通常、スパッタリング法、真空蒸着法な
どにより行われることが多いが、銀などの金属微粒子あ
るいはヨウ化銅、カーボンブラック、導電性の金属酸化
物微粒子、導電性樹脂微粉末などの場合には、適当なバ
インダー樹脂溶液に分散し、基板上に塗布することによ
り形成することもできる。さらに、導電性樹脂の場合は
電界重合により直接基板上に薄膜を形成することもでき
る。The conductive layer is usually formed by sputtering, vacuum evaporation, etc., but it can also be formed using fine metal particles such as silver, copper iodide, carbon black, conductive metal oxide fine particles, conductive resin fine powder, etc. In some cases, it can also be formed by dispersing it in a suitable binder resin solution and coating it on the substrate. Furthermore, in the case of conductive resin, a thin film can be formed directly on the substrate by electric field polymerization.
上記の導電層は異なる物質で積層することも可能である
。導電層2aの厚みは、必要とする透明性により異なる
が、透明性が必要とされる場合は、可視光の透過率が6
0%以上、好ましくは80%以上透過することが望まし
く、この場合は50〜10000人、好ましくは100
〜5000人程度である。不透明でよい場合は導電層2
aは基板lと同一でもよい。また、さらには上記の導電
層を異なる物質で積層することも可能である。The above conductive layer can also be laminated with different materials. The thickness of the conductive layer 2a varies depending on the required transparency, but if transparency is required, the visible light transmittance is 6.
It is desirable to transmit 0% or more, preferably 80% or more, and in this case, 50 to 10,000 people, preferably 100
~5000 people. Conductive layer 2 if opaque is acceptable
a may be the same as the substrate l. Furthermore, it is also possible to laminate the above conductive layers using different materials.
第1図の例では導電層2aは陽極(アノード)として正
孔注入の役割を果たすものである。一方、導電層2bは
陰極(カソード)として発光層4に電子を注入する役割
を果たす。導電層2bとして用いられる材料は、前記導
電層2a用の材料を用いることが可能であるが、効率よ
く電子注入を行うには、仕事関数の低い値をもつ金属が
好ましく、スズ、マグネシウム、インジウム、アル≧ニ
ウム、銀等の適当な金属またはそれらの合金が用いられ
る。導電層2bの膜厚は通常、導電層2aと同様である
。また、第1図には示してはいないが、導電層2bの上
にさらに基板lと同様の基板を設けることもできる。但
し、導電層2aと2bの少なくとも一方は透明性の良い
ことが電界発光素子としては必要である。このことから
、導電層2aと2bの一方は、100〜5000人の膜
厚であることが好ましく、透明性の良いことが望まれる
。In the example shown in FIG. 1, the conductive layer 2a serves as an anode to inject holes. On the other hand, the conductive layer 2b plays a role of injecting electrons into the light emitting layer 4 as a cathode. The material used for the conductive layer 2b can be the same as the material for the conductive layer 2a, but in order to efficiently inject electrons, metals with a low work function are preferred, such as tin, magnesium, and indium. , Al≧Nium, Silver, or an alloy thereof. The thickness of the conductive layer 2b is usually the same as that of the conductive layer 2a. Further, although not shown in FIG. 1, a substrate similar to the substrate 1 may be further provided on the conductive layer 2b. However, as an electroluminescent device, it is necessary that at least one of the conductive layers 2a and 2b has good transparency. For this reason, one of the conductive layers 2a and 2b preferably has a thickness of 100 to 5000 layers, and is desired to have good transparency.
導電層2aの上には正札注入輸送層3が設けられるが、
正孔注入輸送層3としては、電界を与えられた電極間に
おいてアノードからの正孔を効率よく発光層の方向に輸
送することができる化合物より形成される。A genuine tag injection transport layer 3 is provided on the conductive layer 2a,
The hole injection transport layer 3 is formed of a compound that can efficiently transport holes from the anode toward the light emitting layer between the electrodes to which an electric field is applied.
正孔注入輸送化合物としては導電層2aからの正孔注入
効率が高く、かつ、注入された正孔を効率よく輸送する
ことができる化合物であることが必要である。そのため
には、イオン化ポテンシャルが小さく、しかも正孔移動
度が大きく、さらに安定性にすぐれトラップとなる不純
物が製造時や使用時に発生しにくい化合物であることが
要求される。The hole injection/transport compound needs to be a compound that has high hole injection efficiency from the conductive layer 2a and can efficiently transport the injected holes. To this end, it is required that the compound has a low ionization potential, high hole mobility, excellent stability, and is unlikely to generate trapping impurities during production or use.
このような正札注入輸送化合物は例えば、特開昭59−
194393の第5〜6頁及び米国特許第417596
0号の第13〜14欄に解説されるものなどが挙げられ
る。これら化合物の好ましい具体例としては、N、N’
−ジフェニル−N。Such a genuine tag injection transport compound is, for example, disclosed in Japanese Patent Application Laid-open No. 1983-
194393, pages 5-6 and U.S. Patent No. 417596.
Examples include those explained in columns 13 to 14 of No. 0. Preferred specific examples of these compounds include N, N'
-diphenyl-N.
N’ −(3〜メチルフエニル)−1,1’ −ビフェ
ニル−4,4′−ジアミン:t、t’ −ビス(4−’
;−p−)リルアミノフェニル)シクロヘキサン:4,
4’−ビス(ジフェニルアミノ)クワドロフェニルなど
の芳香族アミン系化合物が挙げられる。N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine: t,t'-bis(4-'
;-p-)lylaminophenyl)cyclohexane: 4,
Examples include aromatic amine compounds such as 4'-bis(diphenylamino)quadrophenyl.
正孔注入輸送層3は塗布法あるいは真空蒸着法により前
記導電層2a上に積層することにより形成される。The hole injection transport layer 3 is formed by laminating it on the conductive layer 2a by a coating method or a vacuum evaporation method.
塗布の場合は、正孔注入輸送化合物を1種または2種以
上と必要により正孔のトラップにならないバインダー樹
脂や、レベリング剤等の塗布性改良剤などの添加剤を添
加し溶解した塗布溶液を調整し、スピンコード法などの
方法により導電層2a上に塗布し、乾燥して正孔注入輸
送層3を形成する。バインダー樹脂としては、ポリカー
ボネート、ボリアリレート、ポリエステル等が挙げられ
る。バインダー樹脂は添加量が多いと正孔移動度を低下
させるので、少ない方が望ましく、50重量%以下が好
ましい。In the case of coating, a coating solution containing one or more hole-injecting and transporting compounds and, if necessary, additives such as a binder resin that does not trap holes and a coating properties improver such as a leveling agent, is used. It is adjusted, coated on the conductive layer 2a by a method such as a spin code method, and dried to form the hole injection transport layer 3. Examples of the binder resin include polycarbonate, polyarylate, polyester, and the like. If the binder resin is added in a large amount, the hole mobility will be reduced, so a smaller amount is preferable, and 50% by weight or less is preferable.
正孔注入輸送層の膜厚は通常100〜3000人、好ま
しくは300〜1000人である。この様に薄い膜を一
様に形成するためには、真空蒸着法がよく用いられる。The thickness of the hole injection transport layer is usually 100 to 3000, preferably 300 to 1000. Vacuum deposition is often used to uniformly form such thin films.
第1図において有機発光層4は正孔注入輸送層3の上に
通常は積層される。この層は導電層2bからの電子を正
孔注入輸送層3の方向へ輸送する役割と正孔と電子の再
結合の際に発光をもたらす役割を同時に兼ねている。そ
のような条件を満たす材料としては、テトラフェニルブ
タジェンやクマリンなどの芳香族化合物(特開昭57−
51781)や8−ヒドロキシキノリンのアルミニウム
錯体などの金属錯体(特開昭59−194393)など
が挙げられる。In FIG. 1, an organic light-emitting layer 4 is typically laminated on a hole injection transport layer 3. This layer simultaneously serves the role of transporting electrons from the conductive layer 2b toward the hole injection transport layer 3 and the role of causing light emission when holes and electrons are recombined. Materials that meet such conditions include aromatic compounds such as tetraphenylbutadiene and coumarin (Japanese Patent Application Laid-open No.
51781) and metal complexes such as aluminum complexes of 8-hydroxyquinoline (Japanese Unexamined Patent Publication No. 194393/1983).
本発明の電界発光素子は上記の有機発光化合物として前
記の一般式(I)で表わされる化合物から選ばれること
を特徴とする。The electroluminescent device of the present invention is characterized in that the above organic light emitting compound is selected from the compounds represented by the above general formula (I).
前記一般式(1)において、A及びBは置換基を有して
いてもよい芳香族炭化水素基を示し、フェニル基、ナフ
チル基、フェナンスレン基等から選ばれ、置換基として
は、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子
、メチル基、エチル基等の炭素数1〜6のアルキル基;
メトキシ基、エトキシ基等の炭素数1〜6のアルコキシ
基;メトキシカルボニル基、エトキシカルボニル基等の
炭素数1〜6のアルコキシ基を有するアルコキシカルボ
ニル基;メトキシスルホニル基、エトキシスルホニル基
等の炭素数1〜6のアルコキシスルホニル基;シアノ基
、アミノ基、ジメチルアミノ基、ニトロ基等が挙げられ
る。In the general formula (1), A and B represent an aromatic hydrocarbon group which may have a substituent, and are selected from a phenyl group, a naphthyl group, a phenanthrene group, etc., and examples of the substituent include a chlorine atom, Halogen atoms such as bromine atoms and iodine atoms; alkyl groups having 1 to 6 carbon atoms such as methyl groups and ethyl groups;
Alkoxy groups with 1 to 6 carbon atoms such as methoxy and ethoxy groups; alkoxycarbonyl groups having alkoxy groups with 1 to 6 carbon atoms such as methoxycarbonyl and ethoxycarbonyl groups; carbon atoms such as methoxysulfonyl and ethoxysulfonyl groups 1 to 6 alkoxysulfonyl groups; examples include cyano group, amino group, dimethylamino group, and nitro group.
Xは置換基を有していてもよい窒素原子、硫黄原子、酸
素原子、セレン原子を示し、窒素原子に結合する置換基
としては、水素原子、炭素数1〜28のアルキル基等の
アルキル基;メトキシエチル基、エトキシエチル基等の
アルコキシアルキル基;メトキシ−エトキシエチル基、
n−ブトキシエトキシエチル基等のアルコキシアルコキ
シアルキル基;メトキシエトキシエトキシエチル基、エ
トキシエトキシエトキシエチル基等のアルコキシアルコ
キシアルコキシアルキル基;フェニルオキシエチル基、
ナフチルオキシエチル基、P−クロロフェニルオキシエ
チル基等の置換されていてもよいアリールオキシアルキ
ル基:ベンジル基、フェネチルL p−クロロベンジル
基、p−ニトロベンジル基等の置換されていてもよいア
リールアルキル基;シクロヘキシルメチル基、シクロヘ
キシルエチル基、シクロペンチルエチル基等のシクロア
ルキルアルキル基;アリルオキシエチル基、3−ブロモ
アリルオキシエチル基等の置換されていてもよいアルケ
ニルオキシアルキル基;シアノエチル基、シアノメチル
基等のシアノアルキル基;ヒドロキシエチル基、ヒドロ
キシメチル基等のヒドロキシアルキル基;テトラヒドロ
フリル基、テトラヒドロフリルエチル基等のテトラヒド
ロフリルアルキル基等の置換または非置換のアルキル基
、アリル基、2−クロロアリル基等の置換または非置換
のアルケニル基、フェニル基、p−メチルフェニル基、
ナフチル基、m−メトキシフェニル基等の置換または非
置換のアリール基、シクロヘキシル基、シクロペンチル
基等のシクロアルキル基が挙げられる。X represents a nitrogen atom, sulfur atom, oxygen atom, or selenium atom that may have a substituent, and examples of the substituent bonded to the nitrogen atom include a hydrogen atom and an alkyl group such as an alkyl group having 1 to 28 carbon atoms. ; Alkoxyalkyl groups such as methoxyethyl group and ethoxyethyl group; methoxy-ethoxyethyl group,
Alkoxyalkoxyalkyl groups such as n-butoxyethoxyethyl group; alkoxyalkoxyalkoxyalkyl groups such as methoxyethoxyethoxyethyl group and ethoxyethoxyethoxyethyl group; phenyloxyethyl group,
Optionally substituted aryloxyalkyl group such as naphthyloxyethyl group, P-chlorophenyloxyethyl group: benzyl group, phenethyl L, optionally substituted arylalkyl group such as p-chlorobenzyl group, p-nitrobenzyl group, etc. Group; cycloalkylalkyl group such as cyclohexylmethyl group, cyclohexylethyl group, cyclopentylethyl group; optionally substituted alkenyloxyalkyl group such as allyloxyethyl group, 3-bromoallyloxyethyl group; cyanoethyl group, cyanomethyl group cyanoalkyl groups such as hydroxyethyl groups, hydroxymethyl groups; substituted or unsubstituted alkyl groups such as tetrahydrofuryl groups, tetrahydrofurylethyl groups, allyl groups, 2-chloroallyl groups; Substituted or unsubstituted alkenyl groups, phenyl groups, p-methylphenyl groups,
Examples include substituted or unsubstituted aryl groups such as naphthyl group and m-methoxyphenyl group, and cycloalkyl groups such as cyclohexyl group and cyclopentyl group.
Yは窒素原子、または置換基を有してもよい炭素原子で
、置換基としては水素原子、シアノ基、次式で表わされ
るアミド基ニ
ーC0NH,、−CONHR,−CONRR’(上式で
R,R’はフェニル基等の芳香族炭化水素基または置換
されていてもよいアルキル基を示す)、次式で表わされ
るエステル基: −COOR(上式でRはフェニル基等
の芳香族炭化水素基または置換されていてもよいアルキ
ル基を示す)、1〜28個の炭素原子を有するアルキル
基、カルボキシル基、置換されていてもよいフェニル基
、ナフチル基、フェナントリル基等の芳香族炭化水素基
;置換されていてもよいチエニル基、ピロリル基、チア
ゾリル基、フリル基、オキサシリル基、ベンゾチエニル
基、ベンゾフラニル基、インドリル基、ピリジル基等の
芳香族複素環基等が挙げられる。Y is a nitrogen atom or a carbon atom which may have a substituent, and examples of the substituent include a hydrogen atom, a cyano group, and an amide group represented by the following formula: C0NH, -CONHR, -CONRR' (in the above formula, R , R' represents an aromatic hydrocarbon group such as a phenyl group or an optionally substituted alkyl group), an ester group represented by the following formula: -COOR (in the above formula, R represents an aromatic hydrocarbon group such as a phenyl group) or an optionally substituted alkyl group), an alkyl group having 1 to 28 carbon atoms, a carboxyl group, an aromatic hydrocarbon group such as an optionally substituted phenyl group, a naphthyl group, or a phenanthryl group. ; Aromatic heterocyclic groups such as optionally substituted thienyl group, pyrrolyl group, thiazolyl group, furyl group, oxasilyl group, benzothienyl group, benzofuranyl group, indolyl group, pyridyl group, etc.
これらの化合物の合成法は又賀らによって、J。Synthesis methods for these compounds are described by Mataga et al., J.
Heterocycl 1c、Chem、の18巻、1
073頁(1981年〉;同26巻、215頁(198
,9年)に示されている。Heterocycle 1c, Chem, Volume 18, 1
p. 073 (1981); vol. 26, p. 215 (1981)
, 9).
このようにして得られる上記化合物を具体的に以下の式
(n)〜(XVI)に例示する。The above-mentioned compounds obtained in this manner are specifically exemplified by the following formulas (n) to (XVI).
0Cz)Is QC,HS (Vl) (■) CI。0Cz)Is QC, H.S. (Vl) (■) C.I.
(■)
(X)
(IX)
(XI)
(XI)
(XIV)
(XV)
式(XIV)〜(XVI)に示す化合物では共鳴構造の
ため、5員環のNH基は残りの2個の窒素原子の位置に
あってもさしつかえない。(■) (X) (IX) (XI) (XI) (XIV) (XV) Due to the resonance structure of the compounds shown in formulas (XIV) to (XVI), the NH group of the 5-membered ring is There is no problem even if it is in the position of a nitrogen atom.
これら(I[)から(XVI)の化合物はいずれも強い
蛍光性を示し、有機発光層の化合物として好適である。All of these compounds (I[) to (XVI) exhibit strong fluorescence and are suitable as compounds for the organic light-emitting layer.
有機発光層4の膜厚は通常100〜2000人、好まし
くは300〜1000人である。The thickness of the organic light emitting layer 4 is usually 100 to 2000, preferably 300 to 1000.
有機発光層4も正孔注入輸送層と同様の方法で形成する
ことができるが、通常は真空蒸着法が用いられる。真空
蒸着法で形成した有機薄膜は長期間の放置の後に凝集し
て劣化することがよくみられるが、本発明における有機
発光化合物はこの点においても優れている。The organic light emitting layer 4 can also be formed by the same method as the hole injection transport layer, but usually a vacuum evaporation method is used. Organic thin films formed by vacuum evaporation often aggregate and deteriorate after being left for a long period of time, but the organic light-emitting compound of the present invention is also excellent in this respect.
尚、本発明の電界発光素子は第1図とは逆の構造、すな
わち、基板上に導電層2b、有機発光層4、正孔注入輸
送層3、導電層2aの順に積層することも可能であり、
既述した様に少なくとも一方が透明性の高い2枚の基板
の間に本発明の電界発光素子を設けることも可能である
。Incidentally, the electroluminescent device of the present invention can also have a structure opposite to that shown in FIG. 1, that is, the conductive layer 2b, the organic light emitting layer 4, the hole injection transport layer 3, and the conductive layer 2a can be laminated in this order on the substrate. can be,
As described above, it is also possible to provide the electroluminescent element of the present invention between two substrates, at least one of which is highly transparent.
(発明の効果)
本発明の電界発光素子によれば、導電層(アノード)/
正孔注入輸送層/発光層/導電層(カソード)、が基板
上に順次設けられ、しかも、発光層に特定の化合物を採
用しているため、両温電層を電極として電圧を印加した
場合、低い駆動電圧で実用上十分な輝度の発光を得るこ
とができる。(Effect of the invention) According to the electroluminescent device of the invention, the conductive layer (anode)/
The hole injection transport layer/emissive layer/conductive layer (cathode) are sequentially provided on the substrate, and since a specific compound is used in the emissive layer, when a voltage is applied using both thermoelectric layers as electrodes. , luminescence with sufficient luminance for practical use can be obtained with a low driving voltage.
従って、本発明の電界発光素子はフラットパネル・デイ
スプレィ(例えば壁掛はテレビ)の分野や面発光体とし
ての特徴を生かした光源(例えば、複写機の光源、液晶
デイスプレィや計器類のバックライト光源)、表示板、
標識灯への応用が考えられ、その技術的価値は大きいも
のである。Therefore, the electroluminescent device of the present invention can be used in the field of flat panel displays (for example, wall-mounted televisions) and as a light source that takes advantage of its characteristics as a surface light emitting device (for example, a light source for copying machines, a backlight source for liquid crystal displays, and instruments). , display board,
It can be applied to marker lights, and its technical value is great.
(実施例)
次に、本発明を実施例によって更に具体的に説明するが
、本発明はその要旨を越えない限り、以下の実施例の記
載に限定されるものではない。(Examples) Next, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited to the description of the following Examples unless it exceeds the gist thereof.
実施例1 第1図に示す構造の電界発光素子を製造した。Example 1 An electroluminescent device having the structure shown in FIG. 1 was manufactured.
すなわち、ガラス基板上にインジウム・スズ酸化物(I
To)透明導電膜を1000人堆積したものを、トルエ
ン、イソプロピルアルコールで超音波洗浄したのち、そ
の上に正孔注入輸送層として下記の構造式(1)で示し
た芳香族アミン化合物を真空蒸着法により500人の膜
厚で蒸着した。That is, indium tin oxide (I
To) After 1000 transparent conductive films were deposited and ultrasonically cleaned with toluene and isopropyl alcohol, an aromatic amine compound represented by the following structural formula (1) was vacuum evaporated on top of the transparent conductive film as a hole injection transport layer. The film was deposited to a thickness of 500 mm using the method.
蒸着時の真空度は6X10−’Torrであった。The degree of vacuum during vapor deposition was 6×10-'Torr.
次に有機発光層として、構造式(II)に示した化合物
を正札注入輸送層と同様にして500人の膜厚で蒸着し
た。Next, as an organic light-emitting layer, a compound represented by the structural formula (II) was deposited to a thickness of 500 nm in the same manner as the name plate injection transport layer.
0Cd(。0Cd(.
最後にカソードとして、マグネシウムと銀の合金電極を
、各々膜厚比で10:lとなるように同時蒸着によって
膜厚1500人で蒸着した。蒸着時の真空度は6X 1
0−’To r rで、光沢のある電極が得られた。Finally, as a cathode, an alloy electrode of magnesium and silver was deposited to a film thickness of 1500 ml by simultaneous vapor deposition so that the film thickness ratio was 10:1. The degree of vacuum during vapor deposition is 6X 1
A shiny electrode was obtained at 0-'Torr.
さらに、構造式(III)、(IV)に示した化合物に
ついても同様にしてそれぞれ電界発光素子を作製した。Furthermore, electroluminescent devices were similarly produced for the compounds represented by structural formulas (III) and (IV), respectively.
このようにして得られた第1図に示す構造を有する電界
発光素子について、ITO電極(アノード)にプラス、
マグネシウム−銀電極(カソード)にマイナスの直流電
圧を印加して発光特性を評価した結果を以下の表に示す
。なお、しきい電圧は輝度が1 (cd/rrf)にな
る電圧を示す。Regarding the electroluminescent device thus obtained having the structure shown in FIG.
The table below shows the results of evaluating the light emitting characteristics by applying a negative DC voltage to the magnesium-silver electrode (cathode). Note that the threshold voltage indicates a voltage at which the luminance becomes 1 (cd/rrf).
いずれのセルにおいても低電圧で均一な発光が高い輝度
で得られた。Uniform light emission with high brightness was obtained at low voltage in all cells.
第1図は本発明の電界発光素子の構造の例を断面図で示
したものであり、1は基板、2a、2bは導電層、3は
正孔注入輸送層、4は発光層を表す。FIG. 1 is a sectional view showing an example of the structure of the electroluminescent device of the present invention, in which 1 represents a substrate, 2a and 2b a conductive layer, 3 a hole injection transport layer, and 4 a light emitting layer.
Claims (1)
と有機発光層が設けられた有機電界発光素子において、 有機発光層が下記一般式、 ▲数式、化学式、表等があります▼ (式中、A及びBは置換基を有していてもよい芳香族炭
化水素基を示し、Xは置換基を有していてもよい窒素原
子、硫黄原子、酸素原子、またはセレン原子を示し、Y
は窒素原子、または置換基を有してもよい炭素原子を示
す) で表される化合物を含有することを特徴とする有機電界
発光素子。[Claims] In an organic electroluminescent device in which an organic hole injection transport layer and an organic light emitting layer are provided between electrodes consisting of two conductive layers, the organic light emitting layer has the following general formula, ▲ mathematical formula, chemical formula, or table. etc.▼ (In the formula, A and B represent an aromatic hydrocarbon group that may have a substituent, and X is a nitrogen atom, a sulfur atom, an oxygen atom that may have a substituent, or Indicates a selenium atom, Y
represents a nitrogen atom or a carbon atom that may have a substituent.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1172176A JPH0337292A (en) | 1989-07-04 | 1989-07-04 | Organic electroluminescent element |
EP90112589A EP0406762B1 (en) | 1989-07-04 | 1990-07-02 | Organic electroluminescent device |
DE69012892T DE69012892T2 (en) | 1989-07-04 | 1990-07-02 | Organic electroluminescent device. |
US07/547,147 US5059863A (en) | 1989-07-04 | 1990-07-03 | Organic electroluminescent device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1172176A JPH0337292A (en) | 1989-07-04 | 1989-07-04 | Organic electroluminescent element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0337292A true JPH0337292A (en) | 1991-02-18 |
Family
ID=15936985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1172176A Pending JPH0337292A (en) | 1989-07-04 | 1989-07-04 | Organic electroluminescent element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0337292A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7619356B2 (en) | 2003-05-23 | 2009-11-17 | Lg Chem, Ltd. | ITO film treated by nitrogen plasma and the organic luminescent device using the same |
-
1989
- 1989-07-04 JP JP1172176A patent/JPH0337292A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7619356B2 (en) | 2003-05-23 | 2009-11-17 | Lg Chem, Ltd. | ITO film treated by nitrogen plasma and the organic luminescent device using the same |
US8304983B2 (en) | 2003-05-23 | 2012-11-06 | Lg Chem, Ltd. | ITO film treated by nitrogen plasma and the organic luminescent device using the same |
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