JPH0336718A - Formation of passage for reaction device - Google Patents

Abstract

PURPOSE:To enable a layer flow state to be maintained even at a carved part by setting the relationship among passage gaps of entrance and exit at a curved part of a passage within a reaction device and a passage gap between both solid surfaces from the entrance to the exit at the curved part to a specific relationship. CONSTITUTION:The starting point of a curved part 5A of a gas passage 5 are located on a line connecting points A and B and the ending point is located on a line connecting points C and D. Also, a passage gap at a parallel part of solid surfaces 1A and 3A at an entrance of the curved part 5A is set to l1, a passage gap between both solid surfaces 1A and 3A at a point, namely either the point C or D at the exit of the curved part 5A, located at the downstream side is set to l2, and a passage gap between a reaction container 1 and a susceptor 3 from the beginning of the curve at the curved part 5A to the end is set to l. Then, the following results. l is equal to or less than either l1 or l2 which is larger when l1 is not equal to l2. l is equal to or less than l1 or l2 when l1 is equal to l2. Also, the ratio of either smaller passage gas l1 or l2 to l is set to 0.5 to 1.5 when l1 is not equal to l2, while the ratio of l1 or l2 to l is set to 0.5 to 1.0 when l1 is equal to l2. These ratios are obtained by setting the smaller value of these two values as a denominator.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for forming a flow path in a reaction device such as a vapor phase growth device.

[Prior Art] FIGS. 6 and 7 show a conventional vertical vapor phase growth apparatus. In the figure, 1 is a reaction vessel, 2 is a gas introduction part provided at the top of the reaction vessel 1, and 3 is the reaction vessel 1.
A susceptor 5, which is provided in the interior and supports the substrate 4 on its upper surface, is connected to the gas introduction part 2, and the inner surface of the reaction vessel 1 is connected to the first solid surface IA and between the opposing parts of the reaction vessel 1 and the susceptor 3. A gas flow path is formed using the surface of the susceptor 3 as a second solid surface 3A, and 5A is a curved portion of the gas flow path 5 formed between the shoulder of the reaction vessel 1 and the shoulder of the susceptor 3. be. Reference numeral 6 denotes a susceptor drive shaft that supports the susceptor 3 so that it can rotate and move up and down; 7, an exhaust pipe provided at the lower part of the reaction container 1; 8, a cooling jacket provided on the outer periphery of the upper part of the reaction container 1; 8A; 8B is a cooling water inlet and a cooling water outlet of the cooling jacket 8, and 9 is an induction heating coil provided on the outer periphery of the cooling jacket 8. In addition, 1. Contrary to what has been described above, it goes without saying that the second solid surface may be regarded as the surface of the susceptor 3 as the first solid surface and the inner surface of the reaction vessel 1 as the second solid surface.

In such a vertical vapor phase growth apparatus, source gas is introduced from the gas introduction section 2 at the upper part of the reaction vessel 1.

The gas introduction portion 2 is formed in a tapered shape whose diameter gradually increases toward the susceptor 3 side. After hitting the susceptor 3, the raw material gas introduced from the gas introduction section 2 changes its direction in the radial direction of the susceptor 3 and flows, and the direction of flow is bent by 90' at the bend 5A of the gas flow path 5.

The flow path interval flt between the first solid surface IA and the second solid surface 3A at the inlet of this bent portion 5A, and the number of bent portions 5A
Conventionally, there is no special relationship between the flow path spacing 22 between the first solid surface IA and the second solid surface 3A at the outlet of 2.
It was as follows: ℃1≦J22. The radius of curvature Rs of the shoulder of the susceptor 3 is the radius of curvature R of the shoulder of the reaction vessel 1.
The relationship between r and the flow path spacing of the bent portion 5A is R8<<
The Rr was -12.

Furthermore, the shoulder portion of the susceptor 3 is not arc-shaped;
There was also one with a chamfered structure as shown in FIG.

FIG. 9 and FIG. 10 show an example of a conventional barrel type vapor phase growth apparatus. Note that parts corresponding to those in FIGS. 6 to 8 described above are designated by the same reference numerals. In the figure, I
O is a susceptor cap provided on the top surface of the susceptor 3;
Reference numeral 11 denotes a partition tube that is provided coaxially with respect to the gas introduction part 2 within the reaction vessel 1 and whose base end is fixed to the inner wall of the reaction vessel 1, and 12 is disposed coaxially surrounding the partition tube 11. 13 is a gas outlet provided at the upper part of the flow direction changing container 12.

The gas flow path 5 in this case is formed such that one of the surface of the partition tube 11 and the surface of the flow direction conversion container 12 is a first solid surface, and the other is a second solid surface.

In such a vapor phase growth apparatus, the raw material gas introduced into the gas introduction section 2 enters the partition tube 11 and passes through the first bent section 5A between the tip of the partition tube 11 and the bottom of the flow direction conversion container 12.
1, the direction is changed by 1800 degrees, the gas flows in the opposite direction through the gas flow path 5 between the partition tube 11 and the flow direction changing container 12, flows out into the reaction container 1 from the gas outlet 13, and flows into the reaction container 1 from the gas outlet 13.
The direction changes again by 180° at the second bending portion 5A2, and flows along the susceptor cap 10 and the susceptor 3. In this case, the partition tube 11 and the flow direction conversion container 1
The triple structure of the susceptor 2 and the reaction vessel 1 allows the raw material gas to flow uniformly over the surface of the susceptor 3.

[Problems to be Solved by the Invention] However, in the gas flow path 5 of the type of vapor phase growth apparatus shown in FIGS. There was a problem in that the flow of the raw material gas was separated, creating a vortex 14, and the flow was disturbed. In addition, in the case of this structure, when the flow path interval J2z on the outlet side of the bent portion 5A is wide and the flow rate of the raw material gas is small, the raw material gas flowing along the susceptor 3 rebounds at the bottom of the reaction vessel 1. There was a problem in that the gas flows backward to the upstream side, making it impossible to achieve uniform vapor phase growth on the surface of the substrate 4, making it difficult to obtain a good product.

On the other hand, in the gas flow path 5 of the vapor phase growth apparatus of the type shown in FIGS. 9 and 10, separation of the raw material gas flow occurs at the first bending part 5Al and the second bending part 5A2, resulting in swirling. 14
There was a problem that this caused the flow to become turbulent.

As described above, in any type of conventional gas flow path 5, flow separation occurs on the exit side of the bends 5A, 5A1, 5A2, and a vortex 14 is created, so products that require abrupt switching of raw material gas There was a problem that made it impossible to manufacture.

An object of the present invention is to provide a method for forming a flow path for a reactor that can prevent the flow of fluid from separating from a solid surface.

[Means for Solving the Problems] To explain in detail the present invention for achieving the above object, the present invention provides a curved portion between a first solid surface and a second solid surface in a reactor. In the method for forming a channel for a reactor, in which the channel spacing between the inlets of the channel at the bend is 1°C and the channel spacing at the outlet is J2z, from the inlet of the bend A flow path interval between the first solid surface and the second solid surface up to the outlet is 1
When ≠12, the flow path spacing is less than or equal to the larger of it and J2z, and when 1+=f2z, it is less than or equal to J21 or °C2, and when °C1≠12, the flow path spacing is the smaller of 1l1 and l2. and the ratio of 0.5 to 1.5, J
When 2+=, ez, the ratio of the temperature C1 or J22 to the temperature C is 0.5 to 1.0. Note that these ratios are determined using the smaller of the two values as the denominator.

[Operation] If the flow path spacings J2t, J2z, and j2 at the inlet, outlet, and intermediate portion of the curved portion of the flow path are determined as described above, these flow path spacings will not change significantly, and the fluid flow will separate from the solid surface. prevent Furthermore, even if the fluid flow separates from the solid surface, it can be sufficiently reduced. Therefore, the fluid flows while maintaining a laminar flow state even at curved portions of the flow path.

Further, such a flow path allows rapid switching of fluids.

[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings. Note that parts corresponding to those in FIGS. 6 to 10 described above are designated by the same reference numerals.

FIG. 1 shows a first embodiment of the present invention in which the present invention is applied to a gas flow path 5 of a conventional vapor layer growth apparatus of the type shown in FIG. In the gas flow path 5 of this embodiment, the beginning of the bend 5A is on the line connecting point A and point B, and the end of the bend is on the line connecting point 0 and point D. Also, one solid surface IA and the other solid surface 3 at the entrance of the bending portion 5A
The flow path interval in the parallel part of A is J21, the 0 point at the end of the bending part 5A at the exit of the bending part 5A, and the both rotation body surfaces iA, 3A at whichever point is on the downstream side of the point D.
Let J2z be the channel interval between the two. In this embodiment, the radius of curvature Rs of the shoulder of the susceptor 3 and the radius of curvature Rr of the shoulder of the reaction vessel 1 are selected so that the radius of curvature 2 satisfies 0.5J2t≦12≦1.5J21. At this time, it is preferable that point B be located downstream of point 0.

Further, the flow path interval C between the reaction vessel 1 and the susceptor 3 from the beginning to the end of the bend in the bend portion 5A of the gas flow path 5 is set to be equal to or less than the larger of either C1 or C2. That is, °C≦Max (J2t.

fz).

Further, in this embodiment, the ratio of the smaller interval of either fll or fll to 1 is set to 0.5 to 1.5.

In this way, the flow path interval at the curved portion 5A of the gas flow path 5 does not change suddenly or greatly, separation of the raw material gas flow does not occur, and the flow can be maintained while maintaining a laminar flow state. Therefore, abrupt switching of the raw material gas becomes possible.

FIG. 2 shows a second embodiment of the present invention in which the present invention is applied to the gas flow path 5 of a conventional vapor layer growth apparatus of the type shown in FIG. In this embodiment, the curved surface of the curved portion 5A of the gas flow path 5 at the shoulder of the reaction vessel 1 is formed by combining surfaces with two curvature radii Rrl and Rrj (the intersection of Rrl and Rr2 is at point X), The curved surface of the curved portion 5A of the gas flow path 5 at the shoulder portion of the susceptor 3 is formed with one radius of curvature R8.

In this case, Rr2 is Rr2=Rs+, 92.

In this second embodiment as well, the distance between the flow paths from the inlet to the outlet of the 9-bend portion 5A is set to 11. fiz, whichever is larger, and the ratio of the gap between l1 and J2z, whichever is smaller, is 0.5 or more.

Even in this case, the same effects as in the first embodiment can be obtained.

Of course, in both cases of FIG. 1 and FIG. 2, the reaction vessel 1 and the susceptor 3 do not need to be parallel at the inlet and outlet of the bent portion 5A, and may be tapered. At this time, (1
is the flow path interval between the first solid surface IA and the second solid surface 3A at the bending start point on either upstream side, and
is the channel spacing between the first solid surface IA and the second solid surface 3A at either downstream bend end point.

Specifically, the inner diameter of the reaction vessel 1 is 90 mmφ, the susceptor 3
When the outer diameter of is 72mmφ, J2+ = 8mm, J2
2 = 9mm, Rr = 15mm, Rs =
It was set to 6 mm. At this time, the 0 point and the D point are the gas flow path 5.
Although the points D were placed at almost the same position as seen in the flow direction, the D point was placed downstream of the zero point. There was little peeling.

FIG. 3 shows a third embodiment of the present invention in which the present invention is applied to the gas flow path 5 of the conventional barrel type vapor phase growth apparatus shown in FIG.

In this embodiment, a lower channel forming body 15 is fixed on the susceptor cap 10 and has a W-shaped concave surface with a W-shaped longitudinal section on the upper surface, and a lower channel forming body 15 is fixed on the ceiling of the reaction vessel 1 in a downward direction. A gas flow path 5 is formed between the upper flow path forming body 16 having a W-shaped convex surface on the lower surface having a W-shaped longitudinal section that fits at a predetermined interval into the W-shaped concave surface of the lower flow path forming body 15 described above. ing.

Also in this case, the first bent portion 5Al and the second bent portion 5
It is necessary to prevent the flow from separating from A2.

First, details of the second bent portion 5A2 will be explained with reference to FIG. 4. The bending start point of the reaction vessel 1 is A1 The bending end point is C1 The bending start point of the lower flow path forming body 15 is 8
Let D be the end point of one bend.

In this case, the second bent portion 5A2 of the lower flow path forming body 15
The curved surface in is formed by combining two curved surfaces with different radii of curvature. The population flow path interval at the second bend 5A2 is 21, and the flow path interval at the outlet is 122.
, the channel interval from the bending start point to the bending end point is 1. In addition, the second bent portion 5A2 of the reaction container 1
The radius of curvature in the lower channel forming body 15 is R', and the radius of curvature of the second curved portion 5A2 consisting of two composite curved surfaces in the lower channel forming body 15 is Rcl and Rc2. This is the intersection of the two radii of curvature Rcl and Rc2 that constitute the curved surface in the curved portion 5A2.

In this case, point D was located on the downstream side of point 0, and points A and B were located at approximately the same position in the flow direction.

Further, the temperature C is set to be less than or equal to the larger of flt and J2z, and the ratio of the interval between fls and fl2, whichever is smaller, is set to 0.5 to 1.5.

Next, details of the first bent portion 5Al will be explained with reference to FIG. 5. The bending start point of the lower channel forming body 15 is 01, the bending end point is 2, the bending starting point of the upper channel forming body 16 is H1, and the bending end point is J. First bent part 5
The channel spacing at the inlet of A1 is 1° C., the channel spacing at the outlet is J22, and the channel spacing from the bending start point to the bending end point is 2. In addition, the upper flow path forming body 16
The radius of curvature of the convex curved surface at the first bent portion 5A1 is R
r', and the radius of curvature of the concave curved surface at the first bent portion 5A1 of the lower flow path forming body 15 was Rc'.

Furthermore, point G and point H are at almost the same position in the flow direction,
Point B and one point were also made to almost coincide with each other in the flow direction. The relationship between Rc' and Rr' is Re' = Rr' + i 1,
The relationship between fl1, J2z and pig is f11=flz=1
And so. That is, when J21=J22, the difference is 1 or ℃
The ratio between temperature 2 and °C is set to be 0.5 to 1.0.

Specific numerical examples in this case are as follows.

Inner diameter of reaction vessel 1: 200 mm φ Maximum outer diameter of lower channel type body 15 (outer diameter at point D) 176 mm φ J2t in Figure 4 10 mm Nobu 2 in Figure 4 12 Rcl 12
mmRe2 3
0mmRr
1 in Figure 5 of 24 circles. t 10mm fl in Fig. 5 2 10mmR ``'
6 mark Re'
By doing the above, almost no flow separation occurred at a flow rate of 1001/min.

Regarding the relationship between J2t and 22, it has been confirmed that substantially similar results can be obtained within the scope of the claims. In addition, regarding the flow rate, up to 30,017 minutes, in the case of gas, sufficiently better results than conventional ones were obtained.

[Effects of the Invention] As explained above, the method for forming a flow path for a reactor according to the present invention has 1. Since the relationship between L+, J2z, and J2 is set to the predetermined relationship described above, it is possible to prevent the fluid flow from separating from the solid surface. Further, there is an advantage that even if there is separation of the fluid flow from the solid surface, it can be sufficiently minimized.

Therefore, according to the present invention, the fluid flows while maintaining a laminar flow state even at curved portions of the flow path, which has the advantage of allowing steep fluid switching.

[Brief explanation of drawings]

FIGS. 1 and 2 show the first section in the flow path of a vapor phase growth apparatus in which the method of the present invention is implemented. Enlarged view of the main parts of the second embodiment, 3rd
The figure is a vertical cross-sectional view of a third embodiment of a vapor phase growth apparatus that implements the method of the present invention, FIG. 4 is an enlarged cross-sectional view of the second bent part in FIG. 3, and FIG. An enlarged sectional view of the bent part of No. 1,
FIG. 6 is a longitudinal sectional view of a conventional vapor phase growth apparatus, FIGS. 7 and 8 are enlarged sectional views showing two examples of the bent portion shown in FIG. 6, and FIG. 9 is a conventional vapor phase growth apparatus. A longitudinal cross-sectional view of another example of the device,
FIG. 10 is an enlarged view of the main part of FIG. 9. 1... Reaction vessel, IA... First solid surface, 2...
Gas introduction part, 3... Susceptor, 3A... Second solid surface, 4... Substrate, 5... Gas flow path (flow path), 5A.
...Bent part, 5Al...First bend part, 5A2.
...Second bent part, lO...Susceptor cap, 1
1... Partition tube, 13... Flow direction conversion container, 15.
...Lower channel forming body, 16... Upper channel forming body. fig fig fig fig fig fig fig fig fig fig fig fig fig fig fig.

Claims (1)

[Claims] In a method for forming a channel for a reactor, which forms a channel having a bend between a first solid surface and a second solid surface in a reaction device, the channel spacing between the inlets of the channel at the bend. is l_1 and the flow path spacing at the outlet is l_2, the flow path spacing l between the first solid surface and the second solid surface between the entrance and the exit of the curved portion is l_1≠ l_
When l_1=l_2, it is less than or equal to l_1 or l_2, and when l_1≠l_2, the flow path spacing is the smaller of l_1, l_2 and l_2. The ratio is 0.5 to 1
．． 5. A method for forming a flow path for a reaction device, characterized in that when l_1=l_2, the ratio of l_1 or l_2 to l is 0.5 to 1.0.