JPH0334701A - Bias supply element - Google Patents

Bias supply element

Info

Publication number
JPH0334701A
JPH0334701A JP17008589A JP17008589A JPH0334701A JP H0334701 A JPH0334701 A JP H0334701A JP 17008589 A JP17008589 A JP 17008589A JP 17008589 A JP17008589 A JP 17008589A JP H0334701 A JPH0334701 A JP H0334701A
Authority
JP
Japan
Prior art keywords
line
high frequency
lambda
open
bias supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17008589A
Other languages
Japanese (ja)
Inventor
Shusaku Sasaki
佐々木 秀作
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17008589A priority Critical patent/JPH0334701A/en
Publication of JPH0334701A publication Critical patent/JPH0334701A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To lower the operating frequency and to attain the miniaturization and circuit integration of the device by forming a disk lambda/4 open pattern as a spiral lambda/4 open line pattern and obtaining the operating wavelength depending on the circumferential length from that depending on the radial length within same mount areb. CONSTITUTION:One terminal of a coaxial lambda/4 line 1 is connected nearly perpendicularly to a signal line of a high frequency circuit comprising a strip line using an active element such as a transistor(TR) and the other terminal connected to a spiral lambda/4 line pattern 2a. The spiral lambda/4 open pattern 2a, a high frequency absorbing body 3 and a high frequency ground capacitor 4 are provided in the inside of a case 4 interrupting a high frequency leakage and connected in series with a core wire of the coaxial lambda/4 line 1. The open end of the high frequency ground capacitor 4 is provided with a bias supply terminal 6 connecting to a power supply. In this case, it is possible to response to the frequency lower than that of the bias supply element by using the spiral lambda/4 open line pattern 2a.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、マイクロ波集積回路に用いられるバイアス供
給素子に関し、特に能動素子にマイクロストリップ線路
を介してバイアスを供給するバイアス供給素子に関する
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a bias supply element used in a microwave integrated circuit, and more particularly to a bias supply element that supplies a bias to an active element via a microstrip line.

〔従来の技術〕[Conventional technology]

従来、トランジスタ等の能動素子を用いたマイクロ波集
積回路においては、能動素子に外部から電源を供給し、
マイクロ波増幅等を行わせている。
Conventionally, in microwave integrated circuits using active elements such as transistors, power is supplied to the active elements from the outside,
Microwave amplification etc. are performed.

この場合、マイクロ波集積回路の高周波特性に影響を与
えないように電源を供給する必要があり、電源供給回路
、すなわちバイアス供給回路を工夫する必要がある。
In this case, it is necessary to supply power so as not to affect the high frequency characteristics of the microwave integrated circuit, and it is necessary to devise a power supply circuit, that is, a bias supply circuit.

一般に、マイクロ波集積回路に用いられる能動素子は、
内部に設けられた信号線路とバイアス供給用線路とを共
用する端子を有しており、信号とバイアス供給を分離す
るために信号線路に対して高周波特性が影響しないよう
に174λ′線路の特性を利用したバイアス供給回路が
試みられている。
In general, active elements used in microwave integrated circuits are
It has a terminal that shares the internal signal line and bias supply line, and in order to separate the signal and bias supply, the characteristics of the 174λ' line are adjusted so that the high frequency characteristics do not affect the signal line. Bias supply circuits using this technology are being tried.

マイクロ波集積回路の小型化・集積化が進み、同一平面
上にバイアス供給回路を形成するのではなく、立体的に
信号線路に対して垂直にλ/4線路を接続し、このλ/
4線路の他端に円形λ/4開族パターン、高周波吸収体
などの能動素子の寄生発振を防ぐ構造を直列に接続する
ものが提供されている。
As the miniaturization and integration of microwave integrated circuits progresses, instead of forming a bias supply circuit on the same plane, a λ/4 line is connected three-dimensionally perpendicular to the signal line, and this λ/4 line is connected vertically to the signal line.
There has been proposed a structure in which a structure for preventing parasitic oscillation of active elements, such as a circular λ/4 open group pattern and a high frequency absorber, is connected in series to the other end of the four lines.

このようなバイアス供給素子を第2図に示す。Such a bias supply element is shown in FIG.

第2図において、lは同軸λ/4線路、3は高周波吸収
体、4は高周波接地コンデンサ、5はケース、6はバイ
アス供給端子、7は円板λ/4開放パターンである。
In FIG. 2, l is a coaxial λ/4 line, 3 is a high frequency absorber, 4 is a high frequency grounding capacitor, 5 is a case, 6 is a bias supply terminal, and 7 is a circular λ/4 open pattern.

円板λ/4開放パターン7、高周波吸収体3゜高周波接
地コンデンサ4はケース5の内部に設けられ、円軸λ/
4線路1の芯線と直列に接続されており、同軸λ/4線
路1のシールド線は、ケース5と接続し、シールド効果
を持たせている。
A circular plate λ/4 open pattern 7, a high frequency absorber 3°, and a high frequency grounding capacitor 4 are provided inside the case 5, and the circular axis λ/4 is provided inside the case 5.
It is connected in series with the core wire of the 4-line 1, and the shield wire of the coaxial λ/4 line 1 is connected to the case 5 to provide a shielding effect.

高周波接地コンデンサ4の開放端はケース5の外部へ突
出し、電源と接続されるバイアス供給端子6が設けられ
ている。
The open end of the high frequency grounding capacitor 4 protrudes to the outside of the case 5, and is provided with a bias supply terminal 6 connected to a power source.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のバイアス供給素子において、同軸λ/4
線路線路後続された円板λ/4開放パターン70円板の
半径rによって動作波長が決定されるため、動作周波数
の低域化を企てようとすると、半径r及びケース5の形
状を大きくしなければならず、バイアス供給素子として
の小形化を阻み、実装上使用周波数が限定されていた。
In the conventional bias supply element described above, coaxial λ/4
Since the operating wavelength is determined by the radius r of the disk λ/4 open pattern 70 disk followed by the line, if an attempt is made to lower the operating frequency, the radius r and the shape of case 5 must be increased. This hinders miniaturization of the bias supply element and limits the frequency of use for mounting.

本発明の目的は、上述した欠点を解決し、λ/4開放パ
ターンの特性を損うことなく実装形状を変えずに低域周
波数動作を可能とするバイアス供給素子を提供すること
にある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a bias supply element which solves the above-mentioned drawbacks and enables low frequency operation without impairing the characteristics of the λ/4 open pattern and without changing the mounting shape.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のバイアス供給素子は、高周波トランジスタ等の
能動素子を使用するマイクロストリッツ線路で構成され
た高周波回路の信号線路に一端が接続されたλ/4線路
と、 前記λ/4線路の他端に接続されたうず巻状のλ/4開
放線路開放パターンと、 前記λ/4線路及びうず巻状のλ/4線路開放パターン
と直列に接続された高周波吸収体及び高周波接地コンデ
ンサとを備えている。
The bias supply element of the present invention includes a λ/4 line whose one end is connected to a signal line of a high frequency circuit configured with a microstritz line using active elements such as high frequency transistors, and the other end of the λ/4 line. a spiral λ/4 open line pattern connected to the λ/4 line, and a high frequency absorber and a high frequency grounding capacitor connected in series to the λ/4 line and the spiral λ/4 line open pattern. There is.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1(a)図は本発明のバイアス供給素子の一実施例の
構造を示す図である。
FIG. 1(a) is a diagram showing the structure of one embodiment of the bias supply element of the present invention.

同図において、バイアス供給素子は、同軸λ/4線路1
.うず巻状λ/4開放パターン2a、高周波吸収体3.
高周波接地コンデンサ4.ケース5及びバイアス供給端
子6から構成されている。
In the same figure, the bias supply element is a coaxial λ/4 line 1
.. Spiral-shaped λ/4 open pattern 2a, high frequency absorber 3.
High frequency grounding capacitor 4. It consists of a case 5 and a bias supply terminal 6.

同軸λ/4線路線路後端はトランジスタ等の能動素子を
使用するストリップラインで構成された高周波回路の信
号線路にほぼ垂直に接続され、他端はうず巻状λ/4開
放パターン2aが接続されている。うす巻状λ/4開放
パターン2a、高周波吸収体3及び高周波接地コンデン
サ4は、高周波のリークを遮断するケース5の内部に設
けられ、同軸λ/4線路1の芯線に直列に接続されてい
る。
The rear end of the coaxial λ/4 line is connected almost perpendicularly to the signal line of a high frequency circuit made up of strip lines using active elements such as transistors, and the other end is connected to a spiral λ/4 open pattern 2a. ing. The thinly wound λ/4 open pattern 2a, the high frequency absorber 3, and the high frequency grounding capacitor 4 are provided inside a case 5 that blocks high frequency leakage, and are connected in series to the core wire of the coaxial λ/4 line 1. .

高周波接地コンデンサ4の開放端には電源と接続される
バイアス供給端子6が設けられている。
A bias supply terminal 6 connected to a power source is provided at the open end of the high frequency grounded capacitor 4.

また、第1(b)図は本発明のバイアス供給素子の他の
実施例の構造を示す図である。同図において第1(a)
図と同一のものには同一符号を符しである。
Further, FIG. 1(b) is a diagram showing the structure of another embodiment of the bias supply element of the present invention. In the same figure, 1(a)
Components that are the same as those in the figures are designated by the same reference numerals.

この場合、うず巻状λ/4開放線路パターン2bを用い
ることにより、第1(a)図で示したバイアス供給素子
よりも低い周波数に対応することができる。
In this case, by using the spiral λ/4 open line pattern 2b, it is possible to support a frequency lower than that of the bias supply element shown in FIG. 1(a).

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、立体形状をもつバイアス
供給素子において、円板λ/4開放パターンの形状なう
ず巻状λ/4開放線路パターンにすることにより、同一
実装範囲内で、半径長で決まる動作波長から、円周長で
決まる動作波長にたるため、その分だけ動作周波数の波
長を長くすることができ、動作周波数の低域化を可能と
し、装置の小型化・集積化に効果がある。
As explained above, in a bias supply element having a three-dimensional shape, by forming a spiral λ/4 open line pattern in the shape of a circular λ/4 open pattern, the radius length can be increased within the same mounting range. Since the operating wavelength is changed from the operating wavelength determined by the circumference to the operating wavelength determined by the circumference length, the wavelength of the operating frequency can be increased by that amount, making it possible to lower the operating frequency, which is effective in miniaturizing and integrating the device. There is.

【図面の簡単な説明】[Brief explanation of drawings]

第1 (a)図は本発明の一実施例のバイアス供給素子
の構造を示す図、第1 (b)図は本発明の他の実施例
のバイアス供給素子の構造を示す図、第2図は、従来の
バイアス供給素子の構造を示す図である。 d、 zb 1・・・・・・同軸λ/4線路、)フヒ・・うず巻状λ
/4開放線路パターン、3・・・・・・高周波吸収体、
4・・・・・・高周波接地コンデンサ、5・・・・・・
ケース、6・・・・・・)<イアス供給素子、7・・・
・・・円板λ/4開放ノくターン。
Figure 1 (a) is a diagram showing the structure of a bias supply element according to one embodiment of the present invention, Figure 1 (b) is a diagram showing the structure of a bias supply element according to another embodiment of the present invention, and Figure 2 1 is a diagram showing the structure of a conventional bias supply element. d, zb 1...Coaxial λ/4 line,) Fuhi...Spiral shaped λ
/4 open line pattern, 3... high frequency absorber,
4...High frequency grounding capacitor, 5...
Case, 6...)<Ias supply element, 7...
...Disc λ/4 open turn.

Claims (1)

【特許請求の範囲】 高周波トランジスタ等の能動素子を使用するマイクロス
トリップ線路で構成された高周波回路の信号線路に一端
が接続されたλ/4線路と、前記λ/4線路の他端に接
続されたうず巻状のλ/4開放線路パターンと、 前記λ/4線路及びうず巻状のλ/4開放線路パターン
と直列に接続された高周波吸収体及び高周波接地コンデ
ンサとを備えたことを特徴とするバイアス供給素子。
[Claims] A λ/4 line whose one end is connected to a signal line of a high frequency circuit made up of a microstrip line using active elements such as high frequency transistors, and a λ/4 line connected to the other end of the λ/4 line. A spiral λ/4 open line pattern; a high frequency absorber and a high frequency grounding capacitor connected in series with the λ/4 line and the spiral λ/4 open line pattern. bias supply element.
JP17008589A 1989-06-30 1989-06-30 Bias supply element Pending JPH0334701A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17008589A JPH0334701A (en) 1989-06-30 1989-06-30 Bias supply element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17008589A JPH0334701A (en) 1989-06-30 1989-06-30 Bias supply element

Publications (1)

Publication Number Publication Date
JPH0334701A true JPH0334701A (en) 1991-02-14

Family

ID=15898367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17008589A Pending JPH0334701A (en) 1989-06-30 1989-06-30 Bias supply element

Country Status (1)

Country Link
JP (1) JPH0334701A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6227474B1 (en) 1998-08-27 2001-05-08 Kabushiki Kaisha Johshuya Spinning reel with tension roller for preventing fishing line twist

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029242A (en) * 1983-06-20 1985-02-14 Kiyoshi Hajikano Electrode for electrical discharge machining
JPS63292701A (en) * 1987-05-25 1988-11-30 A T R Koudenpa Tsushin Kenkyusho:Kk Passive circuit device for microwave integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029242A (en) * 1983-06-20 1985-02-14 Kiyoshi Hajikano Electrode for electrical discharge machining
JPS63292701A (en) * 1987-05-25 1988-11-30 A T R Koudenpa Tsushin Kenkyusho:Kk Passive circuit device for microwave integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6227474B1 (en) 1998-08-27 2001-05-08 Kabushiki Kaisha Johshuya Spinning reel with tension roller for preventing fishing line twist

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