JPH0329756B2 - - Google Patents
Info
- Publication number
- JPH0329756B2 JPH0329756B2 JP56034483A JP3448381A JPH0329756B2 JP H0329756 B2 JPH0329756 B2 JP H0329756B2 JP 56034483 A JP56034483 A JP 56034483A JP 3448381 A JP3448381 A JP 3448381A JP H0329756 B2 JPH0329756 B2 JP H0329756B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- carbon
- growth
- die
- growth zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12907580A | 1980-03-10 | 1980-03-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57111299A JPS57111299A (en) | 1982-07-10 |
| JPH0329756B2 true JPH0329756B2 (pm) | 1991-04-25 |
Family
ID=22438347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3448381A Granted JPS57111299A (en) | 1980-03-10 | 1981-03-10 | Method of growing silicon crystal body |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS57111299A (pm) |
| IN (1) | IN154501B (pm) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MX2009013010A (es) * | 2007-06-14 | 2010-01-20 | Evergreen Solar Inc | Recalentador del horno de estirado de cristal con al menos una abertura. |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4158038A (en) * | 1977-01-24 | 1979-06-12 | Mobil Tyco Solar Energy Corporation | Method and apparatus for reducing residual stresses in crystals |
| JPS5815477B2 (ja) * | 1977-08-31 | 1983-03-25 | 大阪チタニウム製造株式会社 | 半導体シリコンの引上法 |
-
1980
- 1980-05-22 IN IN379/DEL/80A patent/IN154501B/en unknown
-
1981
- 1981-03-10 JP JP3448381A patent/JPS57111299A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57111299A (en) | 1982-07-10 |
| IN154501B (pm) | 1984-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4415401A (en) | Control of atmosphere surrounding crystal growth zone | |
| CA1215297A (en) | Method and apparatus for controlling the atmosphere surrounding a crystal growth zone | |
| US4805556A (en) | Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane | |
| US20130298821A1 (en) | Method and apparatus for the production of crystalline silicon substrates | |
| US7390361B2 (en) | Semiconductor single crystal manufacturing apparatus and graphite crucible | |
| US7112242B2 (en) | Manufacturing method for producing silicon carbide crystal using source gases | |
| JPH1081596A (ja) | 単結晶の製造方法及び装置 | |
| WO1991017952A1 (en) | Process for producing crystalline silicon ingot in a fluidized bed reactor | |
| CA1142418A (en) | Displaced capillary dies | |
| JPH0329756B2 (pm) | ||
| US7118625B2 (en) | Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal | |
| CN1276998C (zh) | 稳定树枝状网膜晶体生长的方法和系统 | |
| US9573817B2 (en) | Method and apparatus of manufacturing silicon seed rods | |
| JP2003504295A (ja) | 結晶リボン成長のエッジメニスカス制御 | |
| TW202217083A (zh) | 具有用於覆蓋矽進料之蓋構件之晶體提拉系統及用於在坩鍋總成內生長矽熔體之方法 | |
| JP2500773B2 (ja) | 気相成長装置 | |
| CN120138814B (zh) | 一种石墨坩埚和碳化硅单晶生长装置 | |
| US10392725B2 (en) | Method for depositing silicon feedstock material, silicon wafer, solar cell and PV module | |
| CN119433688A (zh) | 单晶炉及单晶硅制备方法 | |
| JP2006216761A (ja) | 連続液相成膜法およびその装置 | |
| JPS5950637B2 (ja) | 帯状シリコン結晶の製造装置 | |
| JPH11292693A (ja) | シリコン結晶の液相成長法、太陽電池の製造方法及び液相成長装置 | |
| HK1040535A (en) | Method and system for stabilizing dendritic web crystal growth |