JPH03291966A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPH03291966A JPH03291966A JP2093419A JP9341990A JPH03291966A JP H03291966 A JPH03291966 A JP H03291966A JP 2093419 A JP2093419 A JP 2093419A JP 9341990 A JP9341990 A JP 9341990A JP H03291966 A JPH03291966 A JP H03291966A
- Authority
- JP
- Japan
- Prior art keywords
- light
- opening
- light receiving
- image sensor
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910021339 platinum silicide Inorganic materials 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、イメージセンサに関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to an image sensor.
従来ショットキー型ＣＯＤ赤外イメージセンサは第２図
に示す構成の単位絵素を有するものが提案されてきた（
例えば、テレビジョン学会技術報告１９８８年、１２巻
、３６号、１９〜２４頁）。このイメージセンサの単位
絵素は受光素子（白金シリサイド電極４、Ｎ−型ガード
リング２、Ｎ＋型領領域３含むショットキー・ホトダイ
オード）、Ｎ型転送チャネル７、転送電極９を含むＣＣ
Ｄレジスタからなる信号電荷転送部およびトランスファ
ゲート領域６により構成されている。素子裏面から入射
した赤外光は、Ｐ型シリコン基板１を透過し、白金シリ
サイド電極４で一部吸収され、信号電荷を発生させる。Conventionally, a Schottky-type COD infrared image sensor having a unit pixel configuration shown in Fig. 2 has been proposed (
For example, Television Society Technical Report 1988, Vol. 12, No. 36, pp. 19-24). The unit pixel of this image sensor is a CC including a light receiving element (a Schottky photodiode including a platinum silicide electrode 4, an N- type guard ring 2, and an N+ type region 3), an N-type transfer channel 7, and a transfer electrode 9.
It is composed of a signal charge transfer section consisting of a D register and a transfer gate region 6. Infrared light incident from the back surface of the device passes through the P-type silicon substrate 1, is partially absorbed by the platinum silicide electrode 4, and generates signal charges.
吸収されなかった赤外線は、アルミニウム反射膜１５で
反射され、再び白金シリサイド電極４に入射する。白金
シリサイド電極４とアルミニウム反射膜１５の間には、
１μｍ厚程度の８１０２やＳｉＯ膜（キャビティ膜１４
〉をはさんである、受光素子部の感度特性はキャビティ
膜の膜厚に依存することが知られている。The unabsorbed infrared rays are reflected by the aluminum reflective film 15 and enter the platinum silicide electrode 4 again. Between the platinum silicide electrode 4 and the aluminum reflective film 15,
8102 or SiO film (cavity film 14) with a thickness of about 1 μm
It is known that the sensitivity characteristics of the light-receiving element section, which is located between the two sides, depends on the thickness of the cavity film.
第３図（ａ）は従来のイメージセンサを用いて撮像する
場合の構成を示す模式図である。イメージセンサ１８は
、上述した単位絵素をマトリクス状に配した結像面１９
を有している。対象物から発した赤外線はレンズ２０で
集光され、上述の結像面に照射される。ここで結像面の
任意の点Ａについて注目する０点Ａでの単位セルでの受
光について第３図（ｂ）に模式図を示す０点Ａでの受光
素子２１には、対象物から発しレンズで集光された有効
光１０１以外に、イメージセンサの周囲の構成物から発
する背景光１０２も照射される。受光素子に背景光が照
射されると、有効光が照射された場合と同様に、信号電
荷が生じてしまい、受光素子での有効光に対するＳ／Ｎ
が劣化してしまう問題が生じる。FIG. 3(a) is a schematic diagram showing a configuration when capturing an image using a conventional image sensor. The image sensor 18 has an imaging surface 19 on which the above-mentioned unit pixels are arranged in a matrix.
have. The infrared rays emitted from the object are focused by the lens 20 and irradiated onto the above-mentioned image plane. Here, regarding light reception in the unit cell at 0 point A of interest regarding an arbitrary point A on the image forming plane, a schematic diagram is shown in FIG. 3(b). In addition to the effective light 101 focused by the lens, background light 102 emitted from components around the image sensor is also irradiated. When the light receiving element is irradiated with background light, a signal charge is generated in the same way as when effective light is irradiated, and the S/N of the effective light at the light receiving element is
A problem arises in which the deterioration occurs.
本発明は、受光素子、信号電荷転送部および前記受光素
子の信号電荷を前記信号電荷転送部に転送するトランス
ファゲート領域で構成される単位絵素を複数個半導体基
板に集積した受光領域を有するイメージセンサにおいて
、前記受光素子の受光面及び前記信号電荷転送部の転送
チャネルにそれぞれ対応して第１開口及び第２開口を有
する遮光膜が、前記半導体基板の光入射側に設けられて
いるというものである。The present invention provides an image having a light receiving area in which a plurality of unit picture elements each including a light receiving element, a signal charge transfer section, and a transfer gate region for transferring signal charges of the light receiving element to the signal charge transfer section are integrated on a semiconductor substrate. In the sensor, a light shielding film having a first opening and a second opening corresponding to the light receiving surface of the light receiving element and the transfer channel of the signal charge transfer section, respectively, is provided on the light incident side of the semiconductor substrate. It is.
遮光膜の第１開口は受光素子への光入射窓であり、その
周囲の遮光膜部分で背景光の受光素子への入射を防ぐ。The first opening of the light-shielding film is a light entrance window to the light-receiving element, and the surrounding light-shielding film portion prevents background light from entering the light-receiving element.
第２開口を通って転送チャネルに入射する光によりトラ
ップを埋める。Light entering the transfer channel through the second aperture fills the trap.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例のショットキー型ＣＣＤ
赤外イメージセンサを示す半導体チップの断面図である
。FIG. 1 shows a Schottky CCD according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view of a semiconductor chip showing an infrared image sensor.
第２図の従来例との相違は、白金シリサイド電極４の表
面に反射防止膜５が設けられていること、アルミニウム
反射膜１５の代りに第１Ｗｉ口１１ａ、第２開口１２ａ
を有する遮光膜が設けられていることである。The difference from the conventional example shown in FIG. 2 is that an antireflection film 5 is provided on the surface of the platinum silicide electrode 4, and instead of the aluminum reflective film 15, a first Wi port 11a and a second opening 12a are provided.
A light shielding film having the following characteristics is provided.
反射防止膜５は一酸化ケイ素膜からなり、対象光の波長
に見合った厚さを有している。対象光の波長が４μｍ前
後だとすると、厚さは７００ｎｍにする。The antireflection film 5 is made of a silicon monoxide film, and has a thickness commensurate with the wavelength of the target light. If the wavelength of the target light is around 4 μm, the thickness is set to 700 nm.
第１開口１１ａは受光素子の直上部に、第２開口２ａは
Ｎ型転送チャネルの直上部にそれぞれ設けられている。The first aperture 11a is provided directly above the light receiving element, and the second aperture 2a is provided directly above the N-type transfer channel.
受光素子に入射する有効光は、受光領域内での受光素子
の位置およびレンズのＦ値でそれぞれ異なるので第１開
口の大きさは各単位絵素により異なったものにしておく
とよい、遮光膜１３ａは例えば厚さ１μｍのアルミニウ
ム膜である。Since the effective light incident on the light receiving element differs depending on the position of the light receiving element within the light receiving area and the F value of the lens, it is recommended that the size of the first aperture be different for each unit pixel. 13a is, for example, an aluminum film with a thickness of 1 μm.
ショットキー型ＣＣＤ赤外イメージセンサは、液体窒素
温度の低温で使用する。ＣＣＤレジスタのＮ型転送チャ
ネル７に含まれているドーパント（例えば、リン）の一
部が凍結し、ＣＣＤレジスタによる信号電荷転送の際に
はこの凍結したドーパントが、トラップとして働き、転
送損失を生じさせることがある。ＣＣＤレジスタに、光
を照射することによりドーパントの凍結が減少し、転送
損失が軽減する。このため、ＣＣＤレジスタに光が照射
されるよう第２開口が設けられている。A Schottky type CCD infrared image sensor is used at a low temperature of liquid nitrogen temperature. A part of the dopant (e.g., phosphorus) contained in the N-type transfer channel 7 of the CCD register is frozen, and during signal charge transfer by the CCD register, this frozen dopant acts as a trap and causes transfer loss. Sometimes I let it happen. By irradiating the CCD register with light, dopant freezing is reduced and transfer loss is reduced. For this reason, a second aperture is provided so that the CCD register is irradiated with light.
第４図は第２の実施例を示す半導体チップの断面図であ
る。FIG. 4 is a sectional view of a semiconductor chip showing a second embodiment.
この実施例は第２図に示した従来例の裏面入射型イメー
ジセンサのＰ型シリコン基板１の裏面（光入射側）に遮
光膜１３ｂを設けたものであり、第１開口１１ｂ、第２
開口１２ｂはそれぞれ受光素子の受光面（白金シリサイ
ド膜４とＰ型シリコン基板との接触部〉に対応する位置
に設けられている。In this embodiment, a light-shielding film 13b is provided on the back surface (light incident side) of the P-type silicon substrate 1 of the conventional back-illuminated image sensor shown in FIG.
The openings 12b are provided at positions corresponding to the light-receiving surface of the light-receiving element (the contact portion between the platinum silicide film 4 and the P-type silicon substrate).
第５図は第３の実施例を示す半導体チップの断面図であ
る。FIG. 5 is a sectional view of a semiconductor chip showing a third embodiment.
この実施例は可視用ＣＣＤ型イメージセンサであり、遮
光膜１３ｂに第２開口１２ｂが設けられていること、そ
の直下に赤外透過膜１７が設けられている点で公知の可
視用ＣＯＤイメージセンサと異なっている。赤外透過膜
１７は、シリコンの吸収端より短波長の光を遮断し赤外
光を透過させてＮ型転送チャネル７Ｃのトラップを埋め
転送効率を改善するためのものであり、１μｍ程度のシ
リコン膜、好ましくは単結晶シリコン膜である。This embodiment is a visible CCD type image sensor, and is a known visible COD image sensor in that a second opening 12b is provided in a light shielding film 13b, and an infrared transmitting film 17 is provided directly below the second opening 12b. It is different from The infrared transmitting film 17 is for blocking light with a wavelength shorter than the absorption edge of silicon and transmitting infrared light to fill the trap of the N-type transfer channel 7C and improve the transfer efficiency. The film is preferably a single crystal silicon film.
以上説明したように本発明は、受光素子の受光面及び転
送チャネルにそれぞれ対応して第１開口及び第２開口を
有する遮光膜を設けることによりイメージセンサのＳ／
Ｎ及び転送効率を改善することができる。As described above, the present invention provides an image sensor with a light shielding film having a first aperture and a second aperture corresponding to the light receiving surface of the light receiving element and the transfer channel, respectively.
N and transfer efficiency can be improved.
１、ｌａ、ｌｃ・・・Ｐ型シリコン基板、２・・・Ｎ−
型ガードリング、３・・・Ｎ１型領域、４・・・白金シ
リサイド電極、５・・・反射防止膜、６，６ｃ・・・ト
ランスファゲート領域、７．７ｃ・・・Ｎ型転送チャネ
ル、８，８ｃ・・・チャネルストッパ、９・・・転送電
極（多結晶シリコン膜〉、１０・・・絶縁膜、１１ａ。1, la, lc...P-type silicon substrate, 2...N-
Type guard ring, 3... N1 type region, 4... Platinum silicide electrode, 5... Antireflection film, 6, 6c... Transfer gate region, 7.7c... N type transfer channel, 8 , 8c... Channel stopper, 9... Transfer electrode (polycrystalline silicon film), 10... Insulating film, 11a.
１１ｂ、ｌｌｃ・・・第１開口、１２ａ、１２ｂ。11b, llc...first opening, 12a, 12b.
１２ ｃ−・・第２開口、１３ａ、１３ｂ、 １３ｃｍ
遮光膜、１４・・・キャビティ膜、１５・・・アルミニ
ウム反射膜、１６・・・Ｎ＋型領領域１７・・・赤外透
過膜。12 c-...Second opening, 13a, 13b, 13cm
Light shielding film, 14... Cavity film, 15... Aluminum reflective film, 16... N+ type region 17... Infrared transmitting film.
第１図、第２図、第４図及び第５図はそれぞれ第１の実
施例、従来例、第２の実施例及び第３の実施例を示す半
導体チップの断面図、第３図（ａ）はイメージセンサを
用いて撮像する場合の構成を示す模式図、第３図（ｂ）
は点Ａでの単位セルでの受光の有様を示す模式図である
。1, 2, 4, and 5 are cross-sectional views of semiconductor chips showing a first embodiment, a conventional example, a second embodiment, and a third embodiment, respectively, and FIG. ) is a schematic diagram showing the configuration when capturing an image using an image sensor, FIG. 3(b)
2 is a schematic diagram showing how light is received in a unit cell at point A. FIG.
Claims (1)
電荷を前記信号電荷転送部に転送するトランスファゲー
ト領域で構成される単位絵素を複数個半導体基板に集積
した受光領域を有するイメージセンサにおいて、前記受
光素子の受光面及び前記信号電荷転送部の転送チャネル
にそれぞれ対応して第１開口及び第２開口を有する遮光
膜が、前記半導体基板の光入射側に設けられていること
を特徴とするイメージセンサ。In an image sensor having a light receiving region in which a plurality of unit pixels each including a light receiving element, a signal charge transfer section, and a transfer gate region for transferring signal charges of the light receiving element to the signal charge transfer section are integrated on a semiconductor substrate, An image characterized in that a light shielding film having a first opening and a second opening corresponding to the light receiving surface of the light receiving element and the transfer channel of the signal charge transfer section is provided on the light incident side of the semiconductor substrate. sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2093419A JP2596167B2 (en) | 1990-04-09 | 1990-04-09 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2093419A JP2596167B2 (en) | 1990-04-09 | 1990-04-09 | Image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03291966A true JPH03291966A (en) | 1991-12-24 |
| JP2596167B2 JP2596167B2 (en) | 1997-04-02 |
Family
ID=14081783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2093419A Expired - Lifetime JP2596167B2 (en) | 1990-04-09 | 1990-04-09 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2596167B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017143517A (en) * | 2017-02-09 | 2017-08-17 | 株式会社ニコン | Image pick-up device and imaging device |
| JP2018040791A (en) * | 2016-09-02 | 2018-03-15 | ソニーセミコンダクタソリューションズ株式会社 | Imaging device |
-
1990
- 1990-04-09 JP JP2093419A patent/JP2596167B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018040791A (en) * | 2016-09-02 | 2018-03-15 | ソニーセミコンダクタソリューションズ株式会社 | Imaging device |
| JP2017143517A (en) * | 2017-02-09 | 2017-08-17 | 株式会社ニコン | Image pick-up device and imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2596167B2 (en) | 1997-04-02 |
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