JPH03288984A - Information reading system - Google Patents
Information reading systemInfo
- Publication number
- JPH03288984A JPH03288984A JP2091145A JP9114590A JPH03288984A JP H03288984 A JPH03288984 A JP H03288984A JP 2091145 A JP2091145 A JP 2091145A JP 9114590 A JP9114590 A JP 9114590A JP H03288984 A JPH03288984 A JP H03288984A
- Authority
- JP
- Japan
- Prior art keywords
- photodetector
- phosphor
- wavelength
- information
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 36
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 230000005284 excitation Effects 0.000 claims abstract description 14
- 229910052779 Neodymium Inorganic materials 0.000 claims description 32
- -1 neodymium ions Chemical class 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 abstract description 3
- 238000012790 confirmation Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 7
- 229920006267 polyester film Polymers 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000695 excitation spectrum Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は情報読み取り方式、更に詳しくは光学的に文字
、数字、文様、符号等の情報を読み取る方式であって、
特に適当な励起光照射により赤外線波長領域に発光を有
するような蛍光体で記録した情報を読み取るための情報
読み取り方式に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an information reading method, more specifically a method for optically reading information such as letters, numbers, patterns, codes, etc.
In particular, the present invention relates to an information reading method for reading information recorded using a phosphor that emits light in the infrared wavelength region when irradiated with appropriate excitation light.
［従来の技ｍ１
文字、数字、文様、符号等の情報を光学的に読み取る方
式の１つとして、このような各種の情報を蛍光を発する
インクで記録し、適当な励起光照射により発する蛍光を
観測することにより情報を読み取る方式がある。[Conventional technique m1 One method of optically reading information such as letters, numbers, patterns, codes, etc. is to record such various information with ink that emits fluorescence, and to emit fluorescence when irradiated with appropriate excitation light. There is a method of reading information through observation.
このような従来の情報読み取り方式としては、例えば特
開昭５４−３３６３４号公報に記載の発明がある。As such a conventional information reading method, there is an invention described in, for example, Japanese Patent Laid-Open No. 54-33634.
この発明は、 ８００ｎ＋ｓにピークを持ったＧａＡ
ＩＡｓ発光ダイオードで励起し、波長９００−１１０Ｏ
ｎ＋＊に感度を有する光検出器で情報を読み取っていた
。This invention uses GaA with a peak at 800n+s.
Excited with IAs light emitting diode, wavelength 900-110O
Information was read with a photodetector sensitive to n+*.
［発明が解決しようとする課題］
ところがこのような従来の情報読み取り方式にあっては
、８００ｎｍ付近の光で励起させると、光検出器はこの
励起光を検出してしまうので、例えば０．５層厘膜厚の
ＩｎＰ多結晶を用いたフィルター等を用いて、８００ｎ
ｍ付近の光をカットせざるを得ないこととなっていた。[Problems to be Solved by the Invention] However, in such a conventional information reading method, when excited with light around 800 nm, the photodetector detects this excitation light. Using a filter etc. using InP polycrystal with a film thickness of 800n
It was necessary to cut out light in the vicinity of m.
そこで本発明は、上に述べた従来方式による欠点をなく
し、高価で、かつ構造も複雑化せざるを得ないフィルタ
ーを用いないで、所定の物体にネオジムイオンおよびイ
ッテルビウムイオンとで賦活された蛍光体で記録された
情報を読み取るための情報読み取り方式を提供すること
を目的とする。Therefore, the present invention eliminates the drawbacks of the conventional method described above, and eliminates the need for expensive and complicated filters. The purpose is to provide an information reading method for reading information recorded in the body.
［課題を解決するための手段］
上記した目的を達成するために、本発明は、所定の物体
にネオジムイオンおよびイッテルビウムイオンとで賦活
された蛍光体で記録された情報を、ネオジムイオンを励
起し得る波長５００−７８Ｏｎ＋ｓなる励起光で励起し
、波長８４０−１１００ｎｍに感度を有する光検出器で
情報を読み取ることを特徴とする。[Means for Solving the Problems] In order to achieve the above-mentioned object, the present invention records information recorded on a predetermined object using a phosphor activated with neodymium ions and ytterbium ions by exciting the neodymium ions. It is characterized in that it is excited with excitation light having a wavelength of 500-78 On+s and that information is read with a photodetector sensitive to wavelengths of 840-1100 nm.
ここで発明者は、前述した特開昭５４−３３８３４号公
報に記載の発明と同様に、情報記録用蛍光体を、情報読
み取り用の光検出器との適合性を種々検討した。その結
果、ネオジムイオンおよびイッテルビウムイオンとで賦
活された蛍光体は、特開昭５４−３３８３４号公報に記
載の発明よりも低波長である５００−７８０ ｎ層での
励起が可能であることがわかった。Similar to the invention described in Japanese Unexamined Patent Publication No. 54-33834 mentioned above, the inventor conducted various studies on the compatibility of the information recording phosphor with the information reading photodetector. As a result, it was found that a phosphor activated with neodymium ions and ytterbium ions can be excited in the 500-780 n layer, which is a lower wavelength than the invention described in JP-A-54-33834. Ta.
またこのように５００−７８０ ｎｍの波長を有する励
起光で励起するので、フィルターを用いなくても、光検
出器も波長８４０−１１００ｍｍに感度を有し、かつ蛍
光体の発光主波長が９８０ｎｍにその最高感度を有する
ようなタイプのものが使用できることが確認された。In addition, since excitation is performed with excitation light having a wavelength of 500-780 nm, the photodetector is sensitive to wavelengths of 840-1100 mm without using a filter, and the dominant emission wavelength of the phosphor is 980 nm. It was confirmed that the type with the highest sensitivity can be used.
ここでネオジムとイッテルビウムイオンとで賦活された
情報記録用蛍光体としては、Ｃａ１ｏＣＰＯａ）６Ｆ２
：Ｎｄ、Ｙｂ ：Ｃａ５Ｌａ２（ＰＯａ）６０ｚ：Ｎｄ
、Ｙｂ ：ＹＡｌＯ３：Ｎｄ、Ｙｂ：Ｙ３Ａｌ５Ｏ１２
：Ｎｄ、Ｙｂ等がある。これらドープ型の蛍光体の場合
は、Ｎｄ及びＹｂは１−１０％程度の賦活のものを用い
ている。Here, the information recording phosphor activated with neodymium and ytterbium ions includes Ca1oCPOa)6F2
:Nd, Yb :Ca5La2(POa)60z:Nd
, Yb:YAlO3:Nd, Yb:Y3Al5O12
:Nd, Yb, etc. In the case of these doped type phosphors, Nd and Yb are activated in an amount of about 1-10%.
更に、ごく最近Ｎｄを用いた超小型固体レーザー材料と
して注目されている組成物、およびこれら組成物の類似
組成物である材料、（にｄ、Ｙｂ）Ｐ２Ｏ３：（Ｎｄ、
Ｙｂ）Ｐ５０＋ａ ：Ｌｉ（Ｎｄ、Ｙｂ）Ｐ４０＋ｚ
：Ｎａ（Ｎｄ、Ｙｂ）ＰａＯ＋２二に（Ｎｄ、Ｙｂ）Ｐ
４０＋２：に３（Ｎｄ、Ｙｂ）Ｐ２Ｏ３：Ｎａ（Ｎｄ、
Ｙｂ）（ＷＯ４）２ ：Ｎａ５（Ｎｄ、Ｙｂ）（ＷＯａ
）ｎ ：Ｎａ（Ｎｄ、Ｙｂ）（）ＩｏＯｎ）２：Ｎａ５
（Ｎｄ、Ｙｂ）（ＮｏＯｎ）４ ：Ｎａ２（Ｎｄ、Ｙｂ
）Ｎｇ２（ＶＯｎ）３ ：Ａｌ３（Ｎｄ。Furthermore, compositions that have recently attracted attention as ultra-small solid-state laser materials using Nd, and materials that are similar to these compositions, (nid, Yb)P2O3: (Nd,
Yb) P50+a: Li (Nd, Yb) P40+z
:Na(Nd,Yb)PaO+2Second(Nd,Yb)P
40+2: to 3(Nd, Yb)P2O3:Na(Nd,
Yb)(WO4)2 :Na5(Nd,Yb)(WOa
)n:Na(Nd,Yb)()IoOn)2:Na5
(Nd, Yb) (NoOn)4 :Na2(Nd, Yb
)Ng2(VOn)3 :Al3(Nd.
Ｙｂ）（ＢＯ３）ｎ ：（ＡＩ、［１：ｒ）ｓ（Ｎｄ
、Ｙｂ）（Ｂｏ３）ｓ ：Ｎａ５（Ｎｄ、Ｙｂ）（Ｓ
ｉ０３）ｉ ：Ｎａａ（Ｎｄ、Ｙｂ）Ｓｉ２０７ ：
Ｎａ５（Ｎｄ、Ｙｂ）Ｇｅ２０７：Ｎａ５（Ｎｄ、Ｙｂ
）（ＧｅＯ：＋）４：（Ｎｄ、Ｙｂ）ＮｇＡｌ＋＋０＋
ｑ及び、上記組成の（Ｎｄ、Ｙｂ）イオンの１部を３価
を取り得るイオンでかつ、８００ｎ層から１０００ｎ層
の波長にわたって吸収のないイオン、すなわちイツトリ
ウム（Ｙ）、ストカンジウムイ（Ｓｃ） 、カドリニウ
ム（Ｇｄ）、ルテシウム（Ｌｕ） 、ガリウム（Ｇａ）
、インジウム（Ｉｎ）、アンチモン（ｓｂ） 、ビスマ
ス（Ｂｉ）から選ばれた少なくとも１ｆａのイオンによ
り置換された材料を蛍光体として用いることができる。Yb)(BO3)n :(AI, [1:r)s(Nd
,Yb)(Bo3)s :Na5(Nd,Yb)(S
i03)i:Naa(Nd,Yb)Si207:
Na5 (Nd, Yb) Ge207: Na5 (Nd, Yb
)(GeO:+)4:(Nd,Yb)NgAl++0+
A part of the (Nd, Yb) ions having the above composition is an ion that can be trivalent and has no absorption over the wavelength range from 800n layer to 1000n layer, that is, yttrium (Y), stocandium (Sc). , Cadolinium (Gd), Lutetium (Lu), Gallium (Ga)
A material substituted with at least 1fa ions selected from , indium (In), antimony (sb), and bismuth (Bi) can be used as the phosphor.
またここでＮｄおよびＹｂは約５％以上のものを用いて
いる。Further, Nd and Yb are used in an amount of about 5% or more.
［実施例］ 以下本発明の一実施例について説明する。[Example] An embodiment of the present invention will be described below.
まず、蛍光体としてＬｉ（Ｎｄ、Ｙｂ）ＰｎＯ＋２を選
択した場合について説明する。First, a case will be described in which Li(Nd, Yb)PnO+2 is selected as the phosphor.
この蛍光体は、 Ｎｄ２０３３Ｎｄ ２Ｏ３３Ｏ４ｇ Ｌｉ２Ｇ０３ １１ｇ （ＮＨ４）Ｈ２ＰＯ４１４０ｇ をミックスし、石英フタ付きルツボに入れる。This phosphor is Nd2033Nd 2O33O4g Li2G03 11g (NH4)H2PO4140g Mix and place in a crucible with a quartz lid.
次いでこのルツボ毎、電気炉に入れ、室温から７００℃
に２時間かけて昇温し、更にこの７００℃の温度で２時
間焼成する。Next, this crucible was placed in an electric furnace and heated from room temperature to 700℃.
The temperature is raised over 2 hours, and the mixture is further baked at this temperature of 700°C for 2 hours.
この焼成後、すぐに取り出して空気中で冷却し、ルツボ
毎水で煮沸する。After this firing, it is immediately taken out and cooled in the air, and the crucible is boiled in water.
更にそげ後、ｌＮ−ＨＮＯ３で洗浄し、水洗し、乾燥さ
せることによって、Ｌｉ（Ｎｄ、Ｙｂ）Ｐ４０＋２を得
るものである。After further stripping, Li(Nd, Yb)P40+2 is obtained by washing with 1N-HNO3, water, and drying.
次にこのようにして得られたＬｉ（Ｎｄ、Ｙｂ）Ｐ４０
＋２を用いて、種々のＬＥＤ発光ピーク波長に対応した
。Next, Li (Nd, Yb) P40 obtained in this way
+2 was used to accommodate various LED emission peak wavelengths.
受光素子感度の測定結果について説明し、次いで、この
ような蛍光体を用いた種々の実験結果について説明する
。The measurement results of the light-receiving element sensitivity will be explained, and then the results of various experiments using such phosphors will be explained.
まず最初に、出願人は、Ｌｉ（Ｎｄ、Ｙｂ）ＰａＯ＋２
で示される蛍光体を励起する励起スペクトルの測定を行
なった。First of all, the applicant claims that Li(Nd, Yb)PaO+2
We measured the excitation spectrum that excites the phosphor shown in .
その結果、Ｌｉ（Ｎｄ、Ｙｂ）Ｐ４０＋２で示される蛍
光体には、第１図に示すように、８００ｎ■のビークの
他に、
５２５ｎｍ、５８５ｎｍ、ｆ３３ｈｍ、８８５ｎ＋ｗ、
７４５ｎｓ付近にも励起スペクトルを有することがわか
った。As a result, as shown in Fig. 1, the phosphor represented by Li(Nd, Yb)P40+2 has a peak of 525 nm, 585 nm, f33hm, 885n+w, and a peak of 800n.
It was found that the excitation spectrum also existed near 745 ns.
またこのようなＬｉ（Ｎｄ、Ｙｂ）Ｐ’４０＋２で示さ
れる蛍光体の発光は、第２図に示すように、発光主波長
が８８０ｎ■付近にあった。Further, as shown in FIG. 2, the main emission wavelength of the phosphor represented by Li(Nd, Yb)P'40+2 was around 880 nm.
そこで蛍光体を励起させるための波長として、５００−
７８０ｎｍのＧａＡｓＰ：ＮまたはＧａＰの発光ダイオ
ードを用い、かつ受光器には、８４０−１１００ｎｍに
感度を有するシリコンＰＩＮフォトダイオードを用いた
。Therefore, the wavelength for exciting the phosphor is 500-
A 780 nm GaAsP:N or GaP light emitting diode was used, and a silicon PIN photodiode sensitive to 840-1100 nm was used as the light receiver.
またこのフォトダイオードは、蛍光体の発光主波長的９
８０Ｈにその最高感度を有するものである。In addition, this photodiode is based on the dominant emission wavelength of the phosphor.
It has its highest sensitivity at 80H.
本発明を用いた情報読み取り装置の概念図を第３図に示
した。A conceptual diagram of an information reading device using the present invention is shown in FIG.
この装置は、サンプル１０の一方側に電源２１に連結さ
れた発光素子２０を位置させ、サンプル１０の他方側に
テスター３１に連結させた光検出器３０を位置させた、
いわゆる透過測定を行なったものである。またこのサン
プル１０と光検出器３０との間には、本発明の効果を確
認するためのフィルター４０が介装できるようになって
いる。In this device, a light emitting element 20 connected to a power source 21 is located on one side of the sample 10, and a photodetector 30 connected to a tester 31 is located on the other side of the sample 10.
This is a so-called transmission measurement. Furthermore, a filter 40 can be interposed between the sample 10 and the photodetector 30 to confirm the effects of the present invention.
更に詳細な説明は省略するが、テスター３１には、増幅
器等が内装されている。Although a more detailed explanation will be omitted, the tester 31 is equipped with an amplifier and the like.
このような情報読み取り装置を用いて、種々の発光ピー
ク波長を有する複数の発光素子２０を用い、かつ
Ｎｏ Ｓａｍｐｌｅ
Ｐｂｏｓ
１ｌｔｅｒ
Ｆｉｌｔｅｒ＋Ｐｈａｓ
の各状態についての受光量を測定した。Using such an information reading device, a plurality of light emitting elements 20 having various emission peak wavelengths were used, and the amount of light received was measured for each state of No Sample Pbos 1lter Filter+Phas.
ここで
Ｎｏ Ｓａｍｐｌｅは、サンプル１０として単なるポリ
エステルフィルムを用いた場合であり、Ｐｂｏｓは、ポ
リエステルフィルムにＬｉ（Ｎｄ、Ｙｂ）Ｐａ０１２で
示される蛍光体を １００１Ｌｍ塗布したものをサンプ
ルｌＯとして用いた場合であり、Ｆｉｌｔｅｒは５単な
るポリエステルフィルムをサンプル１０とし、９５０ｎ
ｍ以下をカットする■ドブコンｌＲ８５−ＬＰをフィル
ター４０として用いた場合であり、
Ｆｉｌｔａｒ＋Ｐｈｏｓは、ポリエステル７４ ）Ｉｉ
ムにＬｉ（Ｎｄ、Ｙｂ）Ｐａ０１２テ示さレル蛍光体を
１００１Ｌｗ塗布したものをサンプルｌＯとし、９５
０ｎ１以下をカットする■ドブコン ｌＲ８５−ＬＰを
フィルター４０として用いた場合である。Here, No Sample is when a simple polyester film is used as sample 10, and Pbos is when a polyester film coated with 1001 Lm of a phosphor represented by Li (Nd, Yb) Pa012 is used as sample IO. Yes, Filter is 5. Sample 10 is a simple polyester film, and 950n
This is the case when Dobucon lR85-LP is used as the filter 40, and Filter+Phos is polyester 74) Ii
Sample 1O was prepared by coating 1001Lw of Li(Nd, Yb)Pa012 phosphor on the sample, and 95
This is a case where Dobucon 1R85-LP, which cuts 0n1 or less, is used as the filter 40.
その測定結果は次頁以下に示す。The measurement results are shown on the following pages.
（以下余白）
またこのような実験に用いた発光素子の発光波長と、受
光器の分光感度特性について、第４図に示した。(The following is a blank space.) Furthermore, the emission wavelength of the light emitting device used in such an experiment and the spectral sensitivity characteristics of the light receiver are shown in FIG.
この図において、各々の曲線は、
Ａ ： ５８５ｎ騰に発光ピークヲモつＬＥＤの発光ス
ペクトルｇ ： ８９Ｏｎ塵に発光ピークヲモつＬＥＤ
の発光スペクトルＣ： ７００ｎ層に発光ピークをもつ
ＬＥＤの発光スペクトルＤ ： ８００ｎ厘に発光ピー
クヲモつＬＥＤの発光スペクトルＥ：本発明で用いたシ
リコシＰＩＮフｉ ト４イオードの分光感度特性
で示されるものである。In this figure, each curve is: A: Emission spectrum of an LED with an emission peak at 585n G: An LED with an emission peak at 89On
Emission spectrum C: Emission spectrum of an LED with an emission peak at 700n layer D: Emission spectrum of an LED with an emission peak at 800n layer E: What is shown by the spectral sensitivity characteristics of the silicon PIN 4 iodine used in the present invention It is.
このような測定結果から、
フィルター４０の有無に関係なく、蛍光体の発光を受光
した場合の光検出器３０による受光感度は、
５８５ｎ扉で５倍弱、
６９０ｎ層で３倍強、
７００ｎ層で約１００倍
の値を得ることができた。From these measurement results, regardless of the presence or absence of the filter 40, the light reception sensitivity of the photodetector 30 when receiving the emitted light from the phosphor is slightly less than 5 times with the 585n door, more than 3 times with the 690n layer, and more than 3 times with the 700n layer. We were able to obtain a value approximately 100 times greater.
またこのような値は、特に８００ｎ■に発光ピークを有
する波長を用いた場合の、フィルターを使用すると４倍
であるものの、フィルターを使用しないと１．７倍にな
ってしまう場合と大きく異なるものである。In addition, such a value is very different from the case where the emission peak is 400 nm when using a wavelength of 800 nm, which is 4 times as high when a filter is used, but 1.7 times when a filter is not used. It is.
このような実験結果から、ネオジムイオンを励起し得る
波長５００−７８０ ｎ■なる励起光で励起し、波長８
４０−１１００ｎｍに感度を有する光検出器３０で情報
を読み取ることによって、フィルター４０を用いなくて
も、充分蛍光体の有無が検出できることがわかった。Based on these experimental results, neodymium ions were excited by excitation light with a wavelength of 500-780 nm, which can excite neodymium ions, and
It has been found that the presence or absence of the phosphor can be sufficiently detected without using the filter 40 by reading information with the photodetector 30 having sensitivity in the range of 40-1100 nm.
また更に、ポリエステルフィルムにＬｉ（Ｎｄ、Ｙｂ）
Ｐ４Ｏ１０で示される蛍光体を １００ ｇ ｍ塗布し
たものに対して、照射する励起光と、検出する光検出器
３０とをほぼ同一線上に位置させた平行反射測定、ある
いはポリエステルフィルムにＬｉ（Ｎｄ、Ｙｂ）Ｐ４Ｏ
１０で示される蛍光体を１００１Ｌｍ塗布したものに対
して、４５度方向から励起光を当て、かつこの励起光の
方向に直交する方向に光検出器３０を位置させた４５度
反射測定をも行なったものの、具体的な数値は異なるが
、前述した実験で得られた光感度の比率とほぼ同一の数
値が得られた。Furthermore, Li (Nd, Yb) is added to the polyester film.
Parallel reflection measurement was performed on a product coated with 100 g of P4O10 phosphor, with the excitation light irradiated and the photodetector 30 for detection positioned almost on the same line, or Li (Nd, Yb) P4O
A 45-degree reflection measurement was also performed on a sample coated with 1001 Lm of the phosphor shown in 10 by applying excitation light from a 45-degree direction and positioning the photodetector 30 in a direction perpendicular to the direction of the excitation light. However, although the specific values were different, almost the same values were obtained as the photosensitivity ratios obtained in the experiment described above.
なお、以上の説明においては、本発明に関わるＬｉ（Ｎ
ｄ、Ｙｂ）Ｐ４０＋２で示される蛍光体をポリエステル
フィルムに塗布した場合を例として説明したが、本発明
はポリエステルフィルムに塗布した場合に限らず、紙、
他のプラスチック、布、ゴムまたは金属の薄板などにも
塗布して用いることができると共に、磁性粉を塗布し、
磁気コードを用いて情報を読み取る用紙にも併用して用
いることができるものである。In addition, in the above explanation, Li(N
d, Yb) The case where the phosphor represented by P40+2 is applied to a polyester film has been explained as an example, but the present invention is not limited to the case where the phosphor is applied to a polyester film.
It can also be applied to other plastics, cloth, rubber or thin metal plates, and can also be coated with magnetic powder.
It can also be used for paper that uses magnetic codes to read information.
また励起光源となる発光素子及び受光素子は半導体素子
を使用することができるので、本発明に係る情報読み取
り方式を実施するための装置としては、コンパクトでか
つ信頼性の高い装置を製造することができる。Furthermore, since semiconductor elements can be used for the light emitting element and the light receiving element that serve as the excitation light source, it is possible to manufacture a compact and highly reliable apparatus for implementing the information reading method according to the present invention. can.
［発明の効果］
以上説明したように、本発明は、高価で、かつ構造も複
雑化せざるを得ないフィルターを用いないで、所定の物
体にネオジムイオンおよびイッテルビウムイオンとで賦
活された蛍光体で記録された情報を読み取ることができ
るものである。[Effects of the Invention] As explained above, the present invention enables a phosphor activated with neodymium ions and ytterbium ions to be applied to a predetermined object without using a filter that is expensive and has a complicated structure. It is possible to read information recorded in
第１図はＬｉ（Ｊｄ、Ｙｂ）ＰａＯ＋２で示される蛍光
体を励起する波長の測定結果を示すグラフであり、第２
図はＬｉ（Ｎｄ、Ｙｂ）ＰａＯ＋２で示される蛍光体の
発光ピークを示すグラフであり、第３図は本発明を用い
た情報読み取り装置の概念図であり、第４図は実験で用
いた発光素子の発光波長及び光検出器の分光感度特性を
示したグラフである。FIG. 1 is a graph showing the measurement results of the wavelength that excites the phosphor represented by Li(Jd, Yb)PaO+2;
The figure is a graph showing the luminescence peak of the phosphor represented by Li(Nd,Yb)PaO+2, Figure 3 is a conceptual diagram of the information reading device using the present invention, and Figure 4 is the luminescence peak used in the experiment. It is a graph showing the emission wavelength of the element and the spectral sensitivity characteristics of the photodetector.
Claims (1)
イオンとで賦活された蛍光体で記録された情報を、ネオ
ジムイオンを励起し得る波長５００−７８０ｎｍなる励
起光で励起し、波長８４０−１１００ｎｍに感度を有す
る光検出器で情報を読み取ることを特徴とする情報読み
取り方式。1. Information recorded on a predetermined object using a phosphor activated with neodymium ions and ytterbium ions is excited with excitation light with a wavelength of 500-780 nm that can excite neodymium ions, and is sensitive to wavelengths of 840-1100 nm. An information reading method characterized by reading information using a photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2091145A JP2756852B2 (en) | 1990-04-05 | 1990-04-05 | Information reading method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2091145A JP2756852B2 (en) | 1990-04-05 | 1990-04-05 | Information reading method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03288984A true JPH03288984A (en) | 1991-12-19 |
| JP2756852B2 JP2756852B2 (en) | 1998-05-25 |
Family
ID=14018359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2091145A Expired - Fee Related JP2756852B2 (en) | 1990-04-05 | 1990-04-05 | Information reading method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2756852B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000015454A (en) * | 1998-08-29 | 2000-03-15 | 박민용 | Deciphering/recording apparatus of information storage card having forgery and falsification prevention function |
| WO2006104081A1 (en) | 2005-03-29 | 2006-10-05 | Nemoto & Co., Ltd. | Infra-red light emitting fluorescent substance |
| JP2016503454A (en) * | 2012-11-30 | 2016-02-04 | ハネウェル・インターナショナル・インコーポレーテッド | Luminescent borate, luminescent material and article containing such borate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019063309A1 (en) * | 2017-09-28 | 2019-04-04 | Lumileds Holding B.V. | Infrared emitting device |
-
1990
- 1990-04-05 JP JP2091145A patent/JP2756852B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000015454A (en) * | 1998-08-29 | 2000-03-15 | 박민용 | Deciphering/recording apparatus of information storage card having forgery and falsification prevention function |
| WO2006104081A1 (en) | 2005-03-29 | 2006-10-05 | Nemoto & Co., Ltd. | Infra-red light emitting fluorescent substance |
| US8303846B2 (en) | 2005-03-29 | 2012-11-06 | Nemoto & Co., Ltd. | Infra-red light emitting phosphor |
| JP2016503454A (en) * | 2012-11-30 | 2016-02-04 | ハネウェル・インターナショナル・インコーポレーテッド | Luminescent borate, luminescent material and article containing such borate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2756852B2 (en) | 1998-05-25 |
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