JPH03276636A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH03276636A JPH03276636A JP7607190A JP7607190A JPH03276636A JP H03276636 A JPH03276636 A JP H03276636A JP 7607190 A JP7607190 A JP 7607190A JP 7607190 A JP7607190 A JP 7607190A JP H03276636 A JPH03276636 A JP H03276636A
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- resistor
- temperature
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000001514 detection method Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000006378 damage Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、特に大電流増幅用トランジスタを有する半導
体装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention particularly relates to a semiconductor device having a transistor for large current amplification.
従来の技術
近年、電力用トランジスタは、高温動作時の過熱保護制
御の要望が高くなる傾向にある。2. Description of the Related Art In recent years, there has been an increasing demand for overheat protection control for power transistors during high-temperature operation.
以下、従来のトランジスタの高温動作時の過熱保護につ
いて第３図および第４図を参照しながら説明する。第３
図に示すように、プリント基板１１上にトランジスタ１
２と温度検出用抵抗体１３を半田１４等により接着して
トランジスタの過熱保護ユニットを構成し、温度検出用
抵抗体１３の両端より電極をとり、抵抗値の変化を検出
することにより、温度上昇を検知する。この時、検知し
た値が一定値を超える場合に、トランジスタに供給され
るベース電流をカットオフするようにし、トランジスタ
を破壊から保護する。第４図に従来法における温度と抵
抗値の特性図を示す。トランジスタの温度がＴ１からＴ
２に上昇すると、抵抗体１３に熱が伝達されるまでにプ
リント基板１１．半田１４および空気中に放熱して、抵
抗体１３の実際の温度はＴ３からＴ４に変化し、抵抗体
１３の抵抗値はＲ１からＲ２に変化することになる。こ
の抵抗値の変化を検知し、トランジスタを破壊から保護
することができる。Hereinafter, overheat protection of a conventional transistor during high temperature operation will be explained with reference to FIGS. 3 and 4. Third
As shown in the figure, a transistor 1 is mounted on a printed circuit board 11.
2 and the temperature detection resistor 13 are bonded together with solder 14 or the like to form a transistor overheat protection unit, and by taking electrodes from both ends of the temperature detection resistor 13 and detecting the change in resistance value, temperature rise can be detected. Detect. At this time, if the detected value exceeds a certain value, the base current supplied to the transistor is cut off to protect the transistor from destruction. FIG. 4 shows a characteristic diagram of temperature and resistance value in the conventional method. The temperature of the transistor is from T1 to T
2, the printed circuit board 11.2 increases before the heat is transferred to the resistor 13. Heat is radiated into the solder 14 and the air, and the actual temperature of the resistor 13 changes from T3 to T4, and the resistance value of the resistor 13 changes from R1 to R2. By detecting this change in resistance value, it is possible to protect the transistor from destruction.
発明が解決しようとする課題
このような従来の半導体装置では、トランジスタの実際
の温度と大きくずれた温度を計っていることになるので
、実際のトランジスタの温度を正確に検出できないとい
う課題があった。Problems to be Solved by the Invention Conventional semiconductor devices such as this have a problem in that the actual temperature of the transistor cannot be accurately detected because the temperature is measured by a large deviation from the actual temperature of the transistor. .
本発明は上記課題を解決するもので、トランジスタの温
度を正確に把握し、破壊を防ぐことができる半導体装置
を提供することを目的としている。The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a semiconductor device that can accurately grasp the temperature of a transistor and prevent destruction.
課題を解決するための手段
本発明は上記目的を達成するために、半導体基板内に形
成された一導電型のコレクタ領域と、そのコレクタ領域
内に形成されたそのコレクタ領域と反対の導電型のベー
ス領域と、そのベース領域内に形成されたコレクタ領域
と同一の導電型のエミッタ領域と、前述のコレクタ領域
内に前述のベース領域と並んで形成されたコレクタ領域
と反対の導電型の温度検出用抵抗体領域およびその抵抗
体領域の両端の抵抗体電極とを有する構造よりなる。Means for Solving the Problems In order to achieve the above object, the present invention has a collector region of one conductivity type formed in a semiconductor substrate, and a collector region of the opposite conductivity type formed in the collector region. Temperature detection of a base region, an emitter region of the same conductivity type as the collector region formed within the base region, and an opposite conductivity type of the collector region formed within the aforementioned collector region alongside the aforementioned base region. The structure includes a resistor region and resistor electrodes at both ends of the resistor region.
作用
本発明は上記した構成により、温度検出用の抵抗体をコ
レクタ領域内に設けているので、トランジスタの温度と
抵抗体の温度がほぼ一致する。Operation According to the present invention, with the above-described configuration, the temperature detection resistor is provided in the collector region, so that the temperature of the transistor and the temperature of the resistor almost match.
実施例
本発明の一実施例について、第１図および第２図を参照
しながら説明する。Embodiment An embodiment of the present invention will be described with reference to FIGS. 1 and 2.
第１図（ａ） 、 （ｂ）において、１は半導体基板内
に形成されたコレクタ領域、２はベース領域、３はエミ
ッタ領域、４は温度検出用抵抗体領域、５はへ一ス電極
、６はエミッタ電極、７は抵抗体電極、８はコレクタ電
極、９は絶縁膜である。In FIGS. 1(a) and (b), 1 is a collector region formed in a semiconductor substrate, 2 is a base region, 3 is an emitter region, 4 is a temperature detection resistor region, 5 is a heath electrode, 6 is an emitter electrode, 7 is a resistor electrode, 8 is a collector electrode, and 9 is an insulating film.
コレクタ領域１の内部にコレクタ領域１と反対導電型の
ベース領域２と温度検出用の抵抗体領域４を形成してい
る。またベース領域２の内部にコレクタ領域１と同じ導
電型のエミッタ領域３を形成し、それぞれベース電極５
．エミッタ電極６゜抵抗体電極７およびコレクタ電極８
を形成している。トランジスタが動作し、半導体基板の
温度が上昇すると、抵抗体領域４もほぼ同様に温度が上
昇し、抵抗値も変化する。温度と抵抗値の変化を第２図
に示す。図より、トランジスタの実際の温度と抵抗体領
域４の実際の温度がほぼ同じ値になっていることがわか
る。このことにより、トランジスタの温度上昇を正確に
把握することが抵抗値の変化を検出することにより可能
となる。したがって、トランジスタの熱暴走による破壊
に至るまでに、ベース電流の供給を遮断し、トランジス
タを保護することができる。A base region 2 having a conductivity type opposite to that of the collector region 1 and a resistor region 4 for detecting temperature are formed inside the collector region 1 . Furthermore, an emitter region 3 having the same conductivity type as the collector region 1 is formed inside the base region 2, and a base electrode 5 is formed in each base region 2.
．． Emitter electrode 6° resistor electrode 7 and collector electrode 8
is formed. When the transistor operates and the temperature of the semiconductor substrate rises, the temperature of the resistor region 4 also rises in almost the same way, and the resistance value also changes. Figure 2 shows the changes in temperature and resistance value. From the figure, it can be seen that the actual temperature of the transistor and the actual temperature of the resistor region 4 are approximately the same value. This makes it possible to accurately grasp the temperature rise of the transistor by detecting a change in resistance value. Therefore, the supply of base current can be cut off and the transistor can be protected before the transistor is destroyed due to thermal runaway.
発明の効果
本発明によれば、同じ半導体基板内にトランジスタと温
度検出用抵抗体領域を形成しているので、トランジスタ
の温度上昇を正確に把握することができ、トランジスタ
を熱暴走による破壊から防ぐことができる半導体装置を
提供できる。Effects of the Invention According to the present invention, since the transistor and the temperature detection resistor region are formed in the same semiconductor substrate, it is possible to accurately grasp the temperature rise of the transistor and prevent the transistor from being destroyed due to thermal runaway. It is possible to provide a semiconductor device that can perform
第１図（ａ）は本発明の一実施例の半導体装置の平面図
、第１図（ｂ）は同図（ａ）のＸ−Ｘ線断面図、第２図
は本発明の半導体装置を用いた時のトランジスタの温度
上昇と抵抗体の温度上昇による抵抗値の変化を示す特性
図、第３図は従来の半導体装置の斜視図、第４図は第３
図の従来例を用いた時のトランジスタの温度上昇と抵抗
体の温度上昇による抵抗値の変化を示す特性図である。
１・・・・・・コレクタ領域、２・・・・・・ベース領
域、３・・・・・・エミッタ領域、４・・・・・・温度
検出用抵抗体領域、７・・・・・・抵抗体電極。FIG. 1(a) is a plan view of a semiconductor device according to an embodiment of the present invention, FIG. 1(b) is a cross-sectional view taken along the line X-X in FIG. 1(a), and FIG. A characteristic diagram showing the change in resistance value due to the temperature rise of the transistor and the temperature rise of the resistor when used, Figure 3 is a perspective view of a conventional semiconductor device, and Figure 4 is a
FIG. 6 is a characteristic diagram showing a change in resistance value due to a temperature rise of a transistor and a temperature rise of a resistor when the conventional example shown in the figure is used. 1... Collector region, 2... Base region, 3... Emitter region, 4... Temperature detection resistor region, 7...・Resistor electrode.
Claims (1)
、そのコレクタ領域内に形成されたそのコレクタ領域と
反対の導電型のベース領域と、そのベース領域内に形成
された前記コレクタ領域と同一の導電型のエミッタ領域
と、前記コレクタ領域内に前記ベース領域と並んで形成
された前記コレクタ領域と反対の導電型の温度検出用抵
抗体領域およびその抵抗体領域の両端の抵抗体電極とを
有する半導体装置。A collector region of one conductivity type formed in a semiconductor substrate, a base region of a conductivity type opposite to that of the collector region formed in the collector region, and a base region of the same conductivity type as the collector region formed in the base region. It has an emitter region of a conductivity type, a temperature detection resistor region of a conductivity type opposite to that of the collector region formed in the collector region in parallel with the base region, and resistor electrodes at both ends of the resistor region. Semiconductor equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7607190A JPH03276636A (en) | 1990-03-26 | 1990-03-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7607190A JPH03276636A (en) | 1990-03-26 | 1990-03-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03276636A true JPH03276636A (en) | 1991-12-06 |
Family
ID=13594562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7607190A Pending JPH03276636A (en) | 1990-03-26 | 1990-03-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03276636A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5461252A (en) * | 1992-10-06 | 1995-10-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers |
| CN1059054C (en) * | 1994-02-07 | 2000-11-29 | 松下电子工业株式会社 | Semiconductor device |
-
1990
- 1990-03-26 JP JP7607190A patent/JPH03276636A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5461252A (en) * | 1992-10-06 | 1995-10-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers |
| CN1059054C (en) * | 1994-02-07 | 2000-11-29 | 松下电子工业株式会社 | Semiconductor device |
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