JPH0325995A - Manufacture of thin copper foil-plated circuit board - Google Patents
Manufacture of thin copper foil-plated circuit boardInfo
- Publication number
- JPH0325995A JPH0325995A JP15969789A JP15969789A JPH0325995A JP H0325995 A JPH0325995 A JP H0325995A JP 15969789 A JP15969789 A JP 15969789A JP 15969789 A JP15969789 A JP 15969789A JP H0325995 A JPH0325995 A JP H0325995A
- Authority
- JP
- Japan
- Prior art keywords
- copper foil
- etching
- copper
- thickness
- hydrochloric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 44
- 239000010949 copper Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 102
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000011889 copper foil Substances 0.000 claims abstract description 66
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims abstract description 54
- 229960003280 cupric chloride Drugs 0.000 claims abstract description 26
- 239000007864 aqueous solution Substances 0.000 claims abstract description 23
- 239000000243 solution Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 26
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 239000000615 nonconductor Substances 0.000 claims description 5
- 230000003449 preventive effect Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract description 4
- 239000004744 fabric Substances 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 abstract description 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 abstract 1
- 239000012964 benzotriazole Substances 0.000 abstract 1
- 235000017550 sodium carbonate Nutrition 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000007921 spray Substances 0.000 description 10
- -1 5p1 9- Chemical compound 0.000 description 8
- 239000011888 foil Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000005406 washing Methods 0.000 description 5
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 4
- 229940045803 cuprous chloride Drugs 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- LUBJCRLGQSPQNN-UHFFFAOYSA-N 1-Phenylurea Chemical compound NC(=O)NC1=CC=CC=C1 LUBJCRLGQSPQNN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229960004050 aminobenzoic acid Drugs 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002589 poly(vinylethylene) polymer Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電子部品を実装するプリント配線板製造用の
銅箔と電気絶縁体とより製造された銅箔張積層板、銅張
フィルム、銅張シートなどの銅箔張回路基板や補強され
た銅箔であって、平均厚みが数Am〜20坤、所望厚み
に対ずる厚みのバラツキが±1.0一以下である薄銅箔
張回路基板の製造法である。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a copper foil-clad laminate, a copper-clad film, and a copper foil-clad laminate manufactured from copper foil and an electrical insulator for manufacturing printed wiring boards on which electronic components are mounted. Copper foil-clad circuit boards such as copper-clad sheets and reinforced copper foil, with an average thickness of several Am to 20 kon, and a thickness variation of ±1.0 or less with respect to the desired thickness. This is a method for manufacturing circuit boards.
銅箔張回路基板の製造法は、銅箔と絶縁体とを重ね通常
積層戊形等によって製造され、用いる銅箔としては、電
解法による厚み■05−、7(]uM, 35一、18
−、12坤などが量産され、アルミニウム箔等の担体上
に形成された5p1 9−などの銅箔も作られている。Copper foil-clad circuit boards are manufactured by stacking copper foil and insulators, usually by laminating, etc., and the copper foil used has a thickness of ■05-, 7 (] uM, 35-1, 18 by electrolytic method).
Copper foils such as 5p1 9-, which are formed on carriers such as aluminum foils, are also produced.
又、圧延法による銅箔があるが、製造法との関係から薄
くなるほど高価なものとなり実質的には35一未満の厚
さの箔は試作段階にあり、商業的には一般化していない
。In addition, there is copper foil made by rolling, but due to the manufacturing method, the thinner the foil, the more expensive it becomes, and foils with a thickness of less than 35 mm are currently in the trial production stage and have not been commercially common.
このような銅箔を積層戊形に用いる場合、その厚みが薄
いと皺になりやすく、銅箔を絶縁体と重ね合わせる作業
が極めて困難となるので殆ど実用化されていない。また
、アルミニウム箔等の担体上に形戊された銅箔は、この
点を改善したものであるが高価であり、更に銅箔による
プリント配線を形戊する前に担体であるアルミニウム箔
等の除去工程が必要という問題があった。When such a copper foil is used in a laminated shape, if the thickness is thin, it tends to wrinkle, and the work of overlapping the copper foil with an insulator becomes extremely difficult, so it is hardly put to practical use. In addition, copper foil formed on a carrier such as aluminum foil improves this point, but is expensive, and furthermore, it is necessary to remove the carrier such as aluminum foil before forming printed wiring using copper foil. The problem was that it required a process.
また、プリント配線板加工工程において塩化銅や塩化鉄
などのエッチング液にて銅箔張回路基板を予備エッチン
グして銅箔を研磨した後、プリント配線板の製造工程に
用いる方法が知られていたが、予備エッチングによる銅
箔の除去量を数一以上と多くしたり、或いは500x5
00 mm角などの大面積をエッチングして、薄銅張回
路基板を製造する場合には残存銅箔の厚さのバラッキが
大きくなり、商品化可能な薄銅張回路基板を製造するこ
とは出来なかった。Another known method is to pre-etch a copper foil-clad circuit board with an etching solution such as copper chloride or iron chloride in the printed wiring board processing process, polish the copper foil, and then use it in the printed wiring board manufacturing process. However, if the amount of copper foil removed by preliminary etching is increased to several tens or more, or if 500x5
When manufacturing a thin copper-clad circuit board by etching a large area such as 0.00 mm square, the thickness of the remaining copper foil will vary greatly, making it impossible to manufacture a commercially viable thin copper-clad circuit board. There wasn't.
例えば、特開昭62−200796号公報に平均厚さ1
8一以上の銅箔を、機械的研磨、電気化学的研磨或いは
化学的エッチングにより、銅箔の厚さを12一以下にし
た極薄銅箔張回路基板を製造することが開示されている
。For example, in Japanese Patent Application Laid-Open No. 62-200796, an average thickness of 1
It is disclosed that an ultra-thin copper foil-clad circuit board can be manufactured by mechanically polishing, electrochemically polishing, or chemically etching a copper foil having a thickness of 81 or more to a thickness of 121 or less.
しかし、この時開昭の実施例1に示された方法の場合、
340+nm X 340 mm角の銅箔の平均厚さ1
8一のものを塩化第二銅(1. 0mo!/ 12 )
/塩酸(6. 6mol/C)からなるエッチング液
で全面エッチングして平均厚さ10μの薄銅箔としたと
の記載があるが、本発明の比較例1に記載したように市
販のスプレー式エッチングでは、エッチング速度約0.
5即/秒と高速な条件であり、1秒のエッチング時間の
ずれが平均厚さ0. 5ハの差として現れ、しかも場所
によるエッチング液の有効接触時間の差が加算される。However, in the case of the method shown in Example 1 of Kaisho,
Average thickness of 340+nm x 340 mm square copper foil 1
81 is cupric chloride (1.0mo!/12)
There is a description that a thin copper foil with an average thickness of 10 μm was obtained by etching the entire surface with an etching solution consisting of /hydrochloric acid (6.6 mol/C), but as described in Comparative Example 1 of the present invention, a commercially available spray method was used. In etching, the etching rate is approximately 0.
The conditions were high speeds of 5 instants/second, and a 1 second etching time difference resulted in an average thickness of 0.5 seconds. This appears as a difference of 5 times, and the difference in effective contact time of the etching solution depending on the location is added.
この結果、わずか5枚の銅張積層板を6一エッチングす
る場合、平均厚さに対するバラツキ±3.5−、所望厚
さに対するバラッキ±4.8一とエッチング量に相当す
る程大きいものとなる。As a result, when etching only five copper-clad laminates, the variation in average thickness is ±3.5- and the variation in desired thickness is ±4.8-, which is so large that it corresponds to the amount of etching. .
さらにこの傾向はエッチング量を多くする程、また、多
量に生産する場合程、大きくなるものである。また、こ
の時開昭に記載のその他の手段である機械的研磨、電解
研磨等も同様であり、商品化できるものではなかった。Furthermore, this tendency becomes more pronounced as the amount of etching increases and as the amount of production increases. Furthermore, the other methods described in Kaisho, such as mechanical polishing and electrolytic polishing, were also similar and could not be commercialized.
更に、この特開昭の実施例に記載のように通常のエッチ
ング液を用いて、銅箔全面をエッチングした薄銅張回路
基板を直ちに回路形或に使用する場合は、問題と戊らな
いが、この薄銅張回路基板の残存銅箔の表面は極めて活
性に富み、空気中に放置されると短時間で錆が発生ずる
ものであった。Furthermore, if a thin copper-clad circuit board whose entire surface has been etched with copper foil using an ordinary etching solution is immediately used in a circuit form as described in the example of this Japanese Patent Application Laid-Open No. The surface of the remaining copper foil on this thin copper-clad circuit board was extremely active and would rust in a short period of time if left in the air.
本発明は、大型回路基板として使用可能な薄銅箔張回路
基板を生産性よく製造する方法について鋭意検討した結
果、従来のエンチング法に比較して非常に遅い速度で銅
張回路基板の銅箔全面をエッチングして、もとの銅箔の
厚さの25〜90%を除去すること、並びにこの銅エッ
チング液として特定の組或比を有する塩化第二銅/塩酸
水溶液を使用する方法によって厚み精度の高い薄銅張回
路基板が得られることを見出し、本発明に到達した。As a result of intensive research into a method for manufacturing thin copper foil-clad circuit boards with high productivity that can be used as large-sized circuit boards, the present invention has developed a process for manufacturing copper foil on copper-clad circuit boards at a much slower speed than the conventional etching method. The thickness is reduced by etching the entire surface to remove 25 to 90% of the original thickness of the copper foil, and using a cupric chloride/hydrochloric acid aqueous solution with a specific composition ratio as the copper etching solution. The inventors have discovered that a thin copper-clad circuit board with high precision can be obtained, and have arrived at the present invention.
すなわち、本発明は、銅箔と電気絶縁体とより製造され
た銅箔張回路基板を塩化第二銅/塩酸水溶液による銅エ
ッチング液を用い、0.01〜0.3一/秒の速度で銅
箔全面をエッチングして、もとの銅箔の厚さの25〜9
0%を除去し、所望厚みに対して残存銅箔の厚みのバラ
ッキが±1.0一以内とずる薄銅箔張回路基板の製造法
であって、該銅エッチング液が塩化第二銅 0.25〜
3mol/j!、塩酸1〜4mol/βの水溶液で、少
なくとも塩酸濃度が所定濃度の±0. 3mol/ j
2以内に制御され、かつエッチング温度が25〜55℃
の範囲で所定温度±5℃以内に制御されてなることを特
微とする薄銅箔張回路基板の製造法であり、また、該銅
箔全面をエッチングした後、直ちに水溶性防錆剤で残存
銅箔表面を処理することを特徴とする薄銅箔張回路基板
の製造法である。That is, the present invention etches a copper foil-clad circuit board made of copper foil and an electrical insulator using a copper etching solution of cupric chloride/hydrochloric acid aqueous solution at a speed of 0.01 to 0.3 1/sec. The entire surface of the copper foil is etched to a thickness of 25 to 9 mm, which is the thickness of the original copper foil.
A method for producing a thin copper foil-clad circuit board in which the thickness of the remaining copper foil has a variation within ±1.0 with respect to the desired thickness by removing 0% of copper chloride, the copper etching solution comprising cupric chloride 0%. .25~
3mol/j! , an aqueous solution containing 1 to 4 mol/β of hydrochloric acid, and the concentration of hydrochloric acid is at least ±0.0% of the predetermined concentration. 3mol/j
The etching temperature is controlled within 25 to 55℃.
This is a method for manufacturing a thin copper foil-clad circuit board characterized by controlling the temperature within a predetermined temperature range of ±5°C, and after etching the entire surface of the copper foil, immediately etching the copper foil with a water-soluble rust preventive. This is a method for manufacturing a thin copper foil-clad circuit board, which is characterized by treating the surface of the remaining copper foil.
まず、本発明の製造法に用いるエツヂンダ液について、
添付の図面に基づいて説明する。First, regarding the Etsudinda liquid used in the production method of the present invention,
The explanation will be based on the attached drawings.
第1図及び第2図は、それぞれ50℃及び30℃で銅張
積層板をスプレー式エッチング装置で塩化第二銅/塩酸
水溶液を用い、スプレー密度1/2、スプレー圧1 k
g / crAでエッチングし、重量減少からエッチン
グ速度を換算し、これを塩酸濃度一定に於ける塩化第二
銅濃度vsエッチング速度として示したものである。Figures 1 and 2 show copper-clad laminates being etched at 50°C and 30°C, respectively, using a spray etching device with a cupric chloride/hydrochloric acid aqueous solution at a spray density of 1/2 and a spray pressure of 1 k.
Etching was carried out at a rate of g/crA, and the etching rate was calculated from the weight loss, and this is shown as cupric chloride concentration vs. etching rate at a constant hydrochloric acid concentration.
図から、温度 50℃、30℃の両者ともに通常の塩酸
濃度、すなわち、塩酸濃度として4mol#2より高い
5mol,#以上の条件においては、エッチング速度が
塩化第二銅の濃度に大きく依存し、逆に、塩酸濃度が4
mol#!以下になると、塩化第二銅の濃度が大きく変
化してもエッチング速度は僅かに変化するのみであり、
特′rt3mol#!では殆ど水平である。これより、
塩酸濃度が4mol/j2以下になるとの:塩化第二銅
濃度の濃度変化に対してエッチング速度は殆ど変化せず
、3mol/lでは実質的に変化しないことが理解され
る。又、塩酸濃度が5mo1/(2と4mol/j!と
の間隔、4mol/Ilと3mo1/lとの間隔の比較
から塩酸濃度の変化に対しても、塩酸濃度4mol#以
下においては■:塩酸濃度変化に対するエッチング速度
の変化も小さいことが理解される。更に、第1図(50
℃)と第2図(30℃)とのエッチング速度の比較から
、塩酸濃度4mol#!以下においては■:エッチング
速度の温度に対する変化も極めて小さいことが理解され
?。From the figure, it can be seen that under conditions of normal hydrochloric acid concentration at both temperatures of 50°C and 30°C, that is, the hydrochloric acid concentration is 5 mol, which is higher than 4 mol, #2, the etching rate largely depends on the concentration of cupric chloride. Conversely, if the hydrochloric acid concentration is 4
mol#! Below, even if the concentration of cupric chloride changes greatly, the etching rate changes only slightly.
Special'rt3mol#! It is almost horizontal. Than this,
It is understood that when the hydrochloric acid concentration is 4 mol/j2 or less, the etching rate hardly changes with respect to a change in the cupric chloride concentration, and when it is 3 mol/l, it does not change substantially. Also, when the hydrochloric acid concentration is 4 mol # or less, ■: Hydrochloric acid It is understood that the change in etching rate with respect to concentration change is also small.
℃) and Figure 2 (30℃), it was found that the hydrochloric acid concentration was 4 mol#! In the following, ■: Do you understand that the change in etching rate with respect to temperature is also extremely small? .
銅エツヂングは、塩化第二銅(CuC1■)がます銅箔
表面を酸化して塩化第一銅(CuC1)に変化し、酸化
銅箔表面と塩酸(HCI)とが反応して塩化第一銅(C
uC1)としてエッチング液中に溶出され銅箔表面から
除去される発熱反応である。In copper etching, cupric chloride (CuC1■) oxidizes the surface of the copper foil and changes to cuprous chloride (CuC1), and the surface of the oxidized copper foil reacts with hydrochloric acid (HCI) to form cuprous chloride. (C
This is an exothermic reaction in which uC1) is eluted into the etching solution and removed from the surface of the copper foil.
全面均一エッチングを達或するためには、局部的なエッ
チングの過大な進行は避けなければならない。ところが
、エッチング反応に伴いエツヂング薬剤は消費される。In order to achieve uniform etching over the entire surface, excessive progress of local etching must be avoided. However, the etching agent is consumed along with the etching reaction.
従って、局部的エッチングの過大な進行を避けるために
は薬剤が消費されても大きくエッチング速度が低下しな
いことが必要である。これに対して上記■、■はこの条
件を満足する。また、■はエッチング速度制御に、実質
的に塩酸濃度の制御のみ行えばよいことを示すものであ
り、塩化第二銅濃度の測定は複雑で時間がかかり、これ
を制御ファクターとすることは実用的には難しいもので
あることから工業的実施にとっては極めて重大な意義を
有するものである。Therefore, in order to avoid excessive progress of local etching, it is necessary that the etching rate does not decrease significantly even if the chemical is consumed. On the other hand, the above conditions (1) and (2) satisfy this condition. In addition, ■ indicates that in order to control the etching rate, it is essentially only necessary to control the hydrochloric acid concentration; measuring the cupric chloride concentration is complicated and time-consuming, and it is not practical to use this as a control factor. Since it is technically difficult, it has extremely important significance for industrial implementation.
また、エッチングは発熱反応であり、エッチング温度の
変化は当然に生じるものであり、エッチング温度をより
厳密に一定に保つにはその制御用設備が新たに必要とな
る。これに対して、上記■から、この制御も極めて簡便
でよいことが理解されるものであり、やはり実用的には
極めておおきな意義を有するものである。Furthermore, etching is an exothermic reaction, and changes in etching temperature naturally occur, so new control equipment is required to keep the etching temperature more strictly constant. On the other hand, from the above point (2), it can be understood that this control is also extremely simple and easy, and it is of great practical significance.
次に、本発明の構戊について説明する。Next, the structure of the present invention will be explained.
本発明の銅箔と電気絶縁体とより製造された銅箔張回路
基板は、平均厚さ12μ以上で平均厚さに対する厚さの
バラツキが±1. Ours以内の銅箔を使用したもの
であれば特に限定はなく電子、電気材料用として用いら
れている種々の市販品等いずれも使用可能である。特に
12一以下の薄銅箔張積層板とする場合には公称厚みl
2〜18−の銅箔積層板を用いることが好ましい。銅張
積層板としては片面或いは両面銅張のフィルム、シート
、繊維強化絶縁樹脂積層板、金属芯積層板、内層にプリ
ント配線網を形戊した多層シールド板などである。電気
絶縁体層は、ポリイミド樹脂、ポリエステル樹脂等のフ
ィルムやシート、熱硬化性樹脂や耐熱性の熱可塑性樹脂
とガラス(Eガラス、Dガラス、,Sガラス、石英ガラ
ス(クオーツ)その他)、セラミックス類(アルミナ、
窒化硼素、その他)、全芳香族ボリアミド、ポリイミド
、セミカーボン、フッ素樹脂、その他の耐熱性エンジニ
アリングプラスチックなどを一種或いは二種以上適宜併
用してなる繊維、チョップなどを用いた多孔質フィルム
或いはシート状の補強基材とを組み合わせてなるプリプ
レグを用いて製造されるもの、又は、鉄、アルミニウム
板等に絶縁性の接着剤や接着フィルムを被覆してなるも
のなどである。なお、通常の銅張積層板は積層或形の圧
力により、銅箔表面が補強基材の凹凸を一部反映して、
例えばガラス織布基材の場合約0、4mmピッチで3〜
4一程度のうねりを持ったものとなるが、このうねりを
機械的に微細な凹凸等に代えたり、取り除いたりしたも
のを使用することもできる。また、12〜16一の薄銅
箔を使用した銅張積層板或いはシートの製造法としては
、銅箔と鏡面板との間に銅箔よりも熱膨張率の大きいア
ルミニウム箔等の40〜100ハ程度のシートを挿入し
て積層或形ずる方法が好適である。The copper foil-clad circuit board manufactured from the copper foil and electrical insulator of the present invention has an average thickness of 12 μm or more and a thickness variation of ±1. There is no particular limitation as long as it uses copper foil within our range, and any of various commercially available products used for electronic and electrical materials can be used. In particular, in the case of thin copper foil-clad laminates with a thickness of 12-1 or less, the nominal thickness is l.
It is preferable to use a copper foil laminate of 2 to 18 inches. Examples of copper-clad laminates include single-sided or double-sided copper-clad films, sheets, fiber-reinforced insulating resin laminates, metal-core laminates, and multilayer shield plates with a printed wiring network formed on the inner layer. The electrical insulator layer is made of films or sheets made of polyimide resin, polyester resin, etc., thermosetting resin or heat-resistant thermoplastic resin, glass (E glass, D glass, S glass, quartz glass, etc.), ceramics. (alumina,
Porous films or sheets made of fibers, chops, etc. made of one or more types of heat-resistant engineering plastics, such as boron nitride, etc.), fully aromatic polyamides, polyimides, semi-carbons, fluororesins, and other heat-resistant engineering plastics. These include those manufactured using a prepreg formed by combining a reinforcing base material, or those manufactured by coating an iron, aluminum plate, etc. with an insulating adhesive or adhesive film. In addition, with ordinary copper-clad laminates, due to the pressure of lamination, the surface of the copper foil partially reflects the unevenness of the reinforcing base material.
For example, in the case of a glass woven fabric base material, the pitch is about 0.4 mm, and the
Although it has undulations of about 41 degrees, it is also possible to use a material in which the undulations are mechanically replaced with fine irregularities or the like or removed. In addition, as a method for producing copper-clad laminates or sheets using thin copper foil with a thickness of 12 to 16, a layer of aluminum foil with a coefficient of thermal expansion of 40 to 100 A method of laminating or shaping sheets by inserting sheets of approximately 100 mm is preferable.
本発明の塩化第二銅/塩酸水溶液による銅エッチング液
は上記に図面で説明した如きものであり、塩化第二銅と
塩酸とを必須戊分とし、必要に応じてエッチングされた
銅箔面の状態を制御するためなどの助剤を配合してなる
水溶液であり、塩化第二銅(CIC12 2H20)の
濃度は通常0.25〜3mol/l、好ましくは0.
25〜2mol/ R、塩酸(HCI)の濃度は1.
0〜4mo 1/ (1、好ましくは1〜3. 6mo
I/ (1の範囲が、実用範囲で高精度の全面エッチ
ングを行うために用いられる。助剤としてのアルコール
としてはメタノール、エタノール、プロパノール、ブタ
ノールなどの1価アルコール:エチレングリコール、プ
ロピレングリコール、ブタンジオール、ペンタンジオー
ルなどの2価のアルコール;グリセリン、ペンタエリス
リトールなどの3価以」二のアルコールが例示され、又
その他の添加助剤としてポリエチレングリコールなどの
グリコールエーテル類;アミノ安息香酸、アミノテトラ
ゾール、フェニル尿素などの含窒素有機環状化合物類な
どが例示される。The copper etching solution using cupric chloride/hydrochloric acid aqueous solution of the present invention is as explained in the drawings above, and contains cupric chloride and hydrochloric acid as essential components, and optionally etches the etched copper foil surface. It is an aqueous solution containing auxiliary agents for controlling the condition, and the concentration of cupric chloride (CIC12 2H20) is usually 0.25 to 3 mol/l, preferably 0.
25-2 mol/R, the concentration of hydrochloric acid (HCI) is 1.
0-4mo 1/(1, preferably 1-3.6mo
A range of I/ (1) is used to perform highly accurate whole surface etching within a practical range. Alcohols as auxiliary agents include monohydric alcohols such as methanol, ethanol, propanol, and butanol; ethylene glycol, propylene glycol, and butane; Examples include dihydric alcohols such as diol and pentanediol; trihydric or higher alcohols such as glycerin and pentaerythritol; and other additives such as glycol ethers such as polyethylene glycol; aminobenzoic acid, aminotetrazole, Examples include nitrogen-containing organic cyclic compounds such as phenylurea.
また、エッチングにより銅がエッチング液中に溶解して
くるが、この溶解してくる銅の濃度は5〜65g#
(0.08 〜1。O mold) 、好ましくは50
g/l以下の範囲で調整するのが好ましい。In addition, copper dissolves into the etching solution during etching, but the concentration of this dissolved copper is 5 to 65 g.
(0.08 to 1.O mold), preferably 50
It is preferable to adjust it within the range of g/l or less.
上記の塩化第二銅/塩酸水溶液を使用してエッチングを
行うが、このエッチング液は通常のパターン形戊におい
て行われるハードエッチングに比較して大幅にエッチン
グ速度を低下させ、かつ、エッチング薬剤濃度や温度に
対する依存性を低下させたものである。エッチング速度
は0.01〜0.3一/秒の範囲、より好ましくは0.
03〜0.2hv+/秒の範囲を使用する。エッチング
速度が0.3,cm/秒より速いとエッチング条件の制
御可能な条件範囲より小さいエッチング処理時間、或分
濃度、温度などの差でエッチングの量の差が大きくなる
。これは一枚の銅張板の場所によるバラッキ、多数枚処
理した場合の平均厚みのバラツキとして現れ、所望の銅
箔厚みに対する厚みの範囲を±1.DI.lTa以内と
してなる高精度の薄銅張回路基板の製造が困難どなって
、品質管理面等に余分の負荷を生み、不良品も多くなる
ので好ましくない。また、エッチング速度が0.Obo
n/秒より遅いとエッチングに時間がかかり実用的では
ない。Etching is performed using the above-mentioned cupric chloride/hydrochloric acid aqueous solution, but this etching solution significantly reduces the etching speed compared to hard etching performed in normal pattern forming, and also has a high etching agent concentration. It has reduced dependence on temperature. The etching rate is in the range of 0.01-0.31/sec, more preferably 0.01/sec.
A range of 0.03 to 0.2 hv+/sec is used. When the etching rate is faster than 0.3 cm/sec, the difference in etching amount becomes large due to differences in etching processing time, concentration, temperature, etc., which are smaller than the controllable range of etching conditions. This appears as variations depending on the location of a single copper clad plate, and variations in the average thickness when a large number of plates are processed, and the thickness range is ±1. D.I. It is undesirable because it becomes difficult to manufacture a thin copper-clad circuit board with high precision within lTa, which creates an extra burden on quality control, etc., and increases the number of defective products. Also, the etching rate is 0. Obo
If the etching speed is slower than n/second, etching takes a long time and is not practical.
本発明の製造法におけるエッチング方法としては通常ス
プレーエッチングを行うのが適当であり、水平乃至垂直
にて行う。特に、大面積の銅張板の両面を同時にエッチ
ング処理する場合には垂直とすることが好ましい。さら
に、エソチング終了後、銅張積層板表面に付着したエッ
チング液は速やかに除去するようにするのが好ましい。As the etching method in the manufacturing method of the present invention, spray etching is usually suitable, and is performed horizontally or vertically. In particular, when etching both sides of a large-area copper clad board at the same time, it is preferable to set it vertically. Further, it is preferable that the etching solution adhering to the surface of the copper-clad laminate is quickly removed after etching is completed.
エッチングにより所定厚みの銅箔とするためには、所定
のエッチング条件下におけるエッチング速度を測定して
、エッチング時間を設定する方法を使用する。例えば、
両面に同一厚みの銅箔を張った両面銅張板を用い、これ
を水平において両面を同時に同一の厚みにするには、上
下両面のエッチング速度が同一となるようにスプレー圧
、さらに必要によりスプレー数等をコントロールしてエ
ッチング速度を揃え、所定時間エッチングする方法によ
る。又、従来の水平エッチングマシンは、数メートル/
分以下の一定速度で移動する積層板の銅箔面に対してノ
ズルの噴射方向を出来るだけ垂直とする方法が取られて
いるが、本発明の場合には銅張板の銅箔表面に均一にス
プレーされればよく、スプレーノズルの噴射角度を30
°〜50°程度傾けて使用することもできるものである
。In order to obtain a copper foil with a predetermined thickness by etching, a method is used in which the etching rate under predetermined etching conditions is measured and the etching time is set. for example,
Using a double-sided copper clad board with copper foil of the same thickness on both sides, in order to make both sides horizontally the same thickness at the same time, spray pressure and spray if necessary so that the etching speed on both the top and bottom sides is the same. This method is based on a method of controlling the number, etc., making the etching speed uniform, and etching for a predetermined period of time. In addition, conventional horizontal etching machines
A method is used in which the jetting direction of the nozzle is made as perpendicular as possible to the copper foil surface of the laminate, which moves at a constant speed of less than 1 minute. The spray nozzle should be sprayed at an angle of 30°.
It can also be used at an angle of about 50 degrees.
上記した塩化第二銅/塩酸水溶液系のエッチング剤で処
理した積層板の銅箔面は清浄化した後、適宜乾燥し、銅
箔面の保護のために防錆剤の塗布を行う。The copper foil surface of the laminate treated with the cupric chloride/hydrochloric acid aqueous solution etching agent described above is cleaned, dried appropriately, and a rust preventive agent is applied to protect the copper foil surface.
ここに清浄化とは、中和、酸洗浄、水洗、湯洗などの公
知の不純物の除去法でよく、用いた塩化第二銅/塩酸水
溶液による銅エッチング液の安定剤その他の戊分を考慮
して適宜選択するが、酸洗、水洗或いは湯洗後、炭酸ソ
ーダ1〜5 wt%の水溶液で20〜50℃で中和処理
した後、防錆剤としては公知の銅の防錆剤、例えば、ベ
ンゾ} IJアゾールなどのアゾール化合物を0.01
〜1 wt%を含有し、適宜界面活性剤などを併用した
水溶液に20〜50℃で浸漬処理することが好適である
。Here, cleaning may be any known impurity removal method such as neutralization, acid washing, water washing, hot water washing, etc., and considers the use of stabilizers and other additives in the copper etching solution using the cupric chloride/hydrochloric acid aqueous solution. After pickling, water washing, or hot water washing, neutralization treatment at 20 to 50°C with an aqueous solution of 1 to 5 wt% of sodium carbonate, the rust preventive agent may be a known copper rust preventive agent, For example, an azole compound such as benzo} IJ azole at 0.01
It is suitable to carry out the immersion treatment at 20 to 50° C. in an aqueous solution containing 1 wt % and appropriately combined with a surfactant or the like.
又、防錆処理後に、剥離可能な樹脂、例えばポリエチレ
ン、ポリプロピレン、エチレンーブロビレン樹脂、エチ
レンー酢酸ビニル樹脂、塩化ビニリデン、ポリアクリレ
ート共重合体、1.2−ポリブタジエン樹脂、ポリエス
テル樹脂、その他の熱可塑性樹脂製のフィルム類やフォ
トレジストフイルム;パラフィンワックス、ポリエチレ
ンワックス、ロジン、低分子量ポリスチレンなどの汎用
溶媒溶解性の樹脂類;フォトレジスト樹脂液などを圧着
などして銅.箔面を被覆することも好ましい。In addition, after the rust prevention treatment, heat-removable resin such as polyethylene, polypropylene, ethylene-brobylene resin, ethylene-vinyl acetate resin, vinylidene chloride, polyacrylate copolymer, 1,2-polybutadiene resin, polyester resin, etc. Plastic resin films and photoresist films; general-purpose solvent-soluble resins such as paraffin wax, polyethylene wax, rosin, and low molecular weight polystyrene; and photoresist resin liquids are bonded to copper. It is also preferable to coat the foil surface.
本発明の塩化第二銅/塩酸水溶液は、上記のように塩酸
濃度を従来のものに比較して大幅に低下させ、かつ主要
には塩酸濃度を制御することを特徴とするものである。As described above, the cupric chloride/hydrochloric acid aqueous solution of the present invention is characterized by significantly lowering the hydrochloric acid concentration compared to conventional solutions, and mainly controlling the hydrochloric acid concentration.
この点について、添付図面により説明する。This point will be explained with reference to the attached drawings.
以下、実施例、比較例により本発明を具体的に説明する
。なお、エッチングした銅箔の厚みは、うず電流方式で
測定した。Hereinafter, the present invention will be specifically explained with reference to Examples and Comparative Examples. Note that the thickness of the etched copper foil was measured using an eddy current method.
実施例1
700x 1020mmで板厚1.6柵、片面ロープロ
ファイル処理した平均厚さ15−の銅箔を両面に張った
ガラス布基材エボキシ樹脂積層板 10枚を用いて平均
銅箔厚さ9μの薄銅張回路基板を製造した。Example 1 700 x 1020 mm, board thickness 1.6 mm, average copper foil thickness 9μ using 10 glass cloth base epoxy resin laminates with copper foil on both sides coated with low profile treated copper foil of average thickness 15mm. A thin copper-clad circuit board was manufactured.
用いた両面銅張板の銅箔厚さ範囲は、平均15.0μ、
最大15.5−、最小14。5−、バラツキ ±0.
!5tcmであり、表面凹凸度計による銅箔の表面凹凸
は3.6〜4.3一であった。The copper foil thickness range of the double-sided copper clad board used was 15.0μ on average,
Maximum 15.5-, minimum 14.5-, variation ±0.
! 5 tcm, and the surface unevenness of the copper foil measured by a surface unevenness meter was 3.6 to 4.3.
水平エッチングマシンを用い、銅エッチング液として下
記の塩化第二銅エッチング液、エッチング条件を使用し
た。A horizontal etching machine was used, and the following cupric chloride etching solution and etching conditions were used as a copper etching solution.
?いで、0.01〜0.5%のI−ICIの水溶液、3
%の11■S04の水溶液、5%のNa2COa水溶液
に順次室温で30秒間づつ浸漬した後、濃度0.3%の
ペンゾトリアゾール水溶液に40℃で30秒間浸漬し、
100℃の熱風で30秒間乾燥した。? and 0.01-0.5% aqueous solution of I-ICI, 3
After sequentially immersing in a 11% S04 aqueous solution and a 5% Na2COa aqueous solution for 30 seconds each at room temperature, immersing it in a 0.3% concentration penzotriazole aqueous solution at 40 ° C. for 30 seconds,
It was dried with hot air at 100°C for 30 seconds.
得られた薄銅張板すべてについて、銅箔の厚さをそれぞ
れ縦横3等分して得られる一枚当たり18個の長方形内
の任意の点の銅箔厚さを測定した。For all of the obtained thin copper clad boards, the copper foil thickness was measured at any point within 18 rectangles obtained by dividing the thickness of the copper foil into three equal parts vertically and horizontally.
この結果、銅箔厚さは平均8.9−、最大9.4−、最
小8.6−で平均厚さに対するバラツキは±0.5バ、
所望の厚さに対するバラツキは±0.4一であった。As a result, the copper foil thickness averaged 8.9-, maximum 9.4-, minimum 8.6-, and the variation with respect to the average thickness was ±0.5 bar.
The variation with respect to the desired thickness was ±0.41.
なお、薄銅張板を25℃、60%RHで保持したところ
、24時間後に斑点状の錆が発生し、保存性はやや不充
分であった。Note that when the thin copper clad plate was maintained at 25° C. and 60% RH, spotty rust appeared after 24 hours, and the shelf life was somewhat unsatisfactory.
比較例1
下記した通常の塩化第二銅エッチング液、を用いて、実
施例1と同じ銅張積層板をエッチングして9一薄銅張回
路基板を試みた。Comparative Example 1 A 91-thin copper-clad circuit board was prepared by etching the same copper-clad laminate as in Example 1 using the following ordinary cupric chloride etching solution.
まず、このエッチング液を用い、7〇一銅箔張板を用い
下記の条件でエッチング速度を測定した。First, using this etching solution, the etching rate was measured using a 701 copper foil clad plate under the following conditions.
この結果、エッチング速度は0.5−/秒であることを
確認した。15−の銅箔張板を用い、6.OJiエッチ
ングして平均厚さ9.0−にするために必要なエッチン
グ時間は12秒である。As a result, it was confirmed that the etching rate was 0.5-/sec. 15- Using a copper foil clad plate, 6. The etching time required for OJi etching to an average thickness of 9.0- is 12 seconds.
従って、実施例1に使用したエツチンクマシンでは、コ
ンベヤー速度を10m/分とすることが必要であるが、
このエッチングマシンではこの速度は出せないものであ
ったので、このエッチングマシンで可能な方法として、
有効エツチングチャンバ長さ2.0mのうち1.5m分
のスプレーノズルを封鎖し、コンベヤー速度を2−5m
/分に設定して、実施例1と同じ両面銅張積層板5枚を
用いて試験した。Therefore, in the etching machine used in Example 1, it is necessary to set the conveyor speed to 10 m/min.
Since this etching machine could not achieve this speed, the following methods were possible with this etching machine:
The spray nozzles for 1.5 m of the effective etching chamber length of 2.0 m are blocked, and the conveyor speed is reduced to 2-5 m.
/min, and the same five double-sided copper-clad laminates as in Example 1 were used for testing.
得られた薄銅張板5枚について、銅箔の厚さを実施例1
と同様に測定したところ平均8.7μ、最大 ].0.
6−、最小5.2一で平均厚さに対するバラツキは±3
.5−、所望の厚さに対ずるバラッキは±4.8μsで
あり、測定点の48%が銅箔の厚さ8.5〜9.5一の
範囲にあった。また、表面凹凸は3.8〜4.5μsで
あった。For the five thin copper clad boards obtained, the thickness of the copper foil was determined in Example 1.
When measured in the same manner as above, the average was 8.7μ, the maximum was ]. 0.
6-, minimum 5.2- and variation in average thickness is ±3
.. 5-, the variation with respect to the desired thickness was ±4.8 μs, and 48% of the measurement points were in the range of 8.5 to 9.5 mm thick of the copper foil. Moreover, the surface unevenness was 3.8 to 4.5 μs.
更に、薄銅張板を25℃、60%Rl+で保持したとこ
ろ、3時間後に斑点状の錆が発生した。Furthermore, when the thin copper clad plate was held at 25° C. and 60% Rl+, spotty rust appeared after 3 hours.
以上、発明の詳細な説明および実施例、比較例から明瞭
な如<、.従来の塩化第二銅/塩酸水溶液等では、エッ
チング量に対比しうる程大きな銅箔厚さのバラツキが生
じるものであるのに対して、本発明の方法では、極めて
高い厚み精度を有し従来の極薄銅箔に対比しうる薄銅張
板が容易に製造できるものであることが理解される。As is clear from the detailed description of the invention, examples, and comparative examples. With conventional cupric chloride/hydrochloric acid aqueous solutions, etc., the variation in copper foil thickness is so large that it is comparable to the amount of etching, whereas the method of the present invention has extremely high thickness accuracy and It is understood that a thin copper clad plate comparable to the ultra-thin copper foil of 2008 can be easily manufactured.
この結果、従来は高価なアルミニウム箔等の担体上に形
或された5μ、9一などの銅箔を使用する方法、無電解
メッキ或いは蒸着等によってしか裂造出来なかった薄銅
張積層板を精度よく安価に容易に製造することが可能と
なるものであり、その産業上の意義は極めて大きいもの
である。As a result, thin copper-clad laminates, which could previously only be fabricated using methods such as using 5μ or 91 copper foil formed on carriers such as expensive aluminum foil, electroless plating or vapor deposition, have now been made. It can be easily manufactured with high precision and at low cost, and its industrial significance is extremely large.
第1図及び第2図は、それぞれ50℃及び30℃で銅張
積層板をスプレー式エッチング装置で塩化第二銅/塩酸
水溶液を用いてエッチングした時、塩酸濃度を一定に保
った時の塩化第二銅濃度vsエッチング速度の関係を示
したものである。Figures 1 and 2 show the chloride content when a copper clad laminate was etched using a cupric chloride/hydrochloric acid aqueous solution using a spray etching device at 50°C and 30°C, respectively, and the hydrochloric acid concentration was kept constant. It shows the relationship between cupric concentration vs. etching rate.
Claims (1)
を塩化第二銅/塩酸水溶液による銅エッチング液を用い
、0.01〜0.3μm/秒の速度で銅箔全面をエッチ
ングして、もとの銅箔の厚さの25〜90%を除去し、
所望厚みに対して残存銅箔の厚みのバラツキが±1.0
μm以内とする薄銅箔張回路基板の製造法であって、該
銅エッチング液が塩化第二銅0.25〜3mol/l、
塩酸1〜4mol/lの水溶液で、少なくとも塩酸濃度
が所定濃度の±0.3mol/l以内に制御され、かつ
エッチング温度が25〜55℃の範囲で所定温度±5℃
以内に制御されてなることを特徴とする薄銅箔張回路基
板の製造法。 2 該銅箔全面をエッチングした後、直ちに水溶性防錆
剤で残存銅箔表面を処理する請求項1記載の薄銅箔張回
路基板の製造法。[Claims] 1. A copper foil-clad circuit board made of copper foil and an electrical insulator is etched at a speed of 0.01 to 0.3 μm/sec using a copper etching solution of cupric chloride/hydrochloric acid aqueous solution. Etching the entire surface of the copper foil to remove 25-90% of the original copper foil thickness,
The variation in the thickness of the remaining copper foil is ±1.0 with respect to the desired thickness.
A method for manufacturing a thin copper foil-clad circuit board with a thickness within μm, wherein the copper etching solution contains cupric chloride 0.25 to 3 mol/l,
An aqueous solution of hydrochloric acid of 1 to 4 mol/l, at least the hydrochloric acid concentration is controlled within ±0.3 mol/l of the predetermined concentration, and the etching temperature is within the range of 25 to 55°C at the predetermined temperature ±5°C.
A method for producing a thin copper foil-clad circuit board, characterized in that the production of a thin copper foil-clad circuit board is controlled within 2. The method for manufacturing a thin copper foil-clad circuit board according to claim 1, wherein the surface of the remaining copper foil is treated with a water-soluble rust preventive agent immediately after etching the entire surface of the copper foil.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15969789A JPH0325995A (en) | 1989-06-23 | 1989-06-23 | Manufacture of thin copper foil-plated circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15969789A JPH0325995A (en) | 1989-06-23 | 1989-06-23 | Manufacture of thin copper foil-plated circuit board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0325995A true JPH0325995A (en) | 1991-02-04 |
Family
ID=15699343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15969789A Pending JPH0325995A (en) | 1989-06-23 | 1989-06-23 | Manufacture of thin copper foil-plated circuit board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0325995A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4572941A (en) * | 1983-06-27 | 1986-02-25 | Sciaky, S.A. | Method of and installation for spot-welding by laser beam |
JPH0360183A (en) * | 1989-07-28 | 1991-03-15 | Mitsubishi Gas Chem Co Inc | Manufacture of circuit board covered with thin copper foil |
JPH06252530A (en) * | 1991-06-03 | 1994-09-09 | American Teleph & Telegr Co <Att> | Pattern etching method |
JP2001007477A (en) * | 1999-06-17 | 2001-01-12 | Mitsubishi Gas Chem Co Inc | Manufacture of multilayer printed circuit board having through hole by carbon dioxide gas laser processing |
JP2003110223A (en) * | 2001-09-28 | 2003-04-11 | Denki Kagaku Kogyo Kk | Method of manufacturing circuit board |
-
1989
- 1989-06-23 JP JP15969789A patent/JPH0325995A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4572941A (en) * | 1983-06-27 | 1986-02-25 | Sciaky, S.A. | Method of and installation for spot-welding by laser beam |
JPH0360183A (en) * | 1989-07-28 | 1991-03-15 | Mitsubishi Gas Chem Co Inc | Manufacture of circuit board covered with thin copper foil |
JP2797488B2 (en) * | 1989-07-28 | 1998-09-17 | 三菱瓦斯化学株式会社 | Manufacturing method of thin copper foil-clad circuit board |
JPH06252530A (en) * | 1991-06-03 | 1994-09-09 | American Teleph & Telegr Co <Att> | Pattern etching method |
JP2001007477A (en) * | 1999-06-17 | 2001-01-12 | Mitsubishi Gas Chem Co Inc | Manufacture of multilayer printed circuit board having through hole by carbon dioxide gas laser processing |
JP2003110223A (en) * | 2001-09-28 | 2003-04-11 | Denki Kagaku Kogyo Kk | Method of manufacturing circuit board |
JP4731771B2 (en) * | 2001-09-28 | 2011-07-27 | 電気化学工業株式会社 | Circuit board manufacturing method |
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