JPH0325803A - Transparent conductive film - Google Patents
Transparent conductive filmInfo
- Publication number
- JPH0325803A JPH0325803A JP16005489A JP16005489A JPH0325803A JP H0325803 A JPH0325803 A JP H0325803A JP 16005489 A JP16005489 A JP 16005489A JP 16005489 A JP16005489 A JP 16005489A JP H0325803 A JPH0325803 A JP H0325803A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- transparent conductive
- metal oxide
- conductive film
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 16
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 16
- 150000002902 organometallic compounds Chemical class 0.000 claims description 21
- 239000010408 film Substances 0.000 abstract description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 9
- 150000001875 compounds Chemical class 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052738 indium Inorganic materials 0.000 abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 3
- -1 diallyl tin Chemical compound 0.000 abstract description 2
- MKRVHLWAVKJBFN-UHFFFAOYSA-N diphenylzinc Chemical compound C=1C=CC=CC=1[Zn]C1=CC=CC=C1 MKRVHLWAVKJBFN-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 abstract 1
- XJPKDRJZNZMJQM-UHFFFAOYSA-N tetrakis(prop-2-enyl)stannane Chemical compound C=CC[Sn](CC=C)(CC=C)CC=C XJPKDRJZNZMJQM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910006853 SnOz Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 244000145845 chattering Species 0.000 description 1
- BXVLQFGQYHYURU-UHFFFAOYSA-N diethyltin Chemical compound CC[Sn]CC BXVLQFGQYHYURU-UHFFFAOYSA-N 0.000 description 1
- PWEVMPIIOJUPRI-UHFFFAOYSA-N dimethyltin Chemical compound C[Sn]C PWEVMPIIOJUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Non-Insulated Conductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】 〈産業上の利用分野） 本発明は透明導電膜に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a transparent conductive film.
《従来の技ｖｉ）
従来の透明導電膜は、高分子フィルムやガラス等の絶縁
基板に、酸化インジウムや酸化スズ等の金属酸化物をス
パッタリング法等により蒸肴して形或している。また、
インジウムやスズの金属を蒸看し、高渇雰囲気中で空気
酸化したり、あるいは反応性イオンプレーテイング法に
より蒸着して形成している。<<Prior art vi) A conventional transparent conductive film is formed by depositing a metal oxide such as indium oxide or tin oxide on an insulating substrate such as a polymer film or glass using a sputtering method or the like. Also,
It is formed by vaporizing indium or tin metal, oxidizing it in air in a high-density atmosphere, or depositing it by reactive ion plating.
この透明導電膜は、一般には低温で成膜でき、有機系物
質による膜よりも低抵抗の膜が得られる。This transparent conductive film can generally be formed at a low temperature and has a lower resistance than a film made of an organic material.
（発明が解決しようとする課題）
しかし、この無機系物質からなる透明導電膜は、ＣｖＤ
等の高温で成膜する場合と比べて、ｉ４酸化性やＷＡｔ
ｉ性、耐摩耗性、耐溶剤性等が比較的に劣る欠点があっ
た。(Problem to be solved by the invention) However, the transparent conductive film made of this inorganic material is CvD
Compared to film formation at high temperatures such as
It had the disadvantage of being relatively poor in ionic properties, abrasion resistance, solvent resistance, etc.
本発明は、以上の欠点を改良し、耐食性等を向上しつる
透明導電膜を提供することを目的とする。An object of the present invention is to improve the above-mentioned drawbacks and provide a transparent conductive film with improved corrosion resistance and the like.
《課題を解決するための手段）
本発明は、上記の目的を達成するために、金属酸化物と
、有機金属化合物とからなる透明導毒膜を捉供するもの
である。<Means for Solving the Problems> In order to achieve the above object, the present invention provides a transparent poison-conducting film made of a metal oxide and an organometallic compound.
また、本発明は、金属酸化物と、有機金属化合物の酸化
物とからなる透明導電膜を提供する−６のである。The present invention also provides a transparent conductive film comprising a metal oxide and an oxide of an organometallic compound.
さらに、本発明は、金属酸化物と、有機金属化合物と、
有機金属化合物の酸化物とからなる透明Ｓ電膜を提供す
るものである。Furthermore, the present invention provides a metal oxide, an organometallic compound,
The present invention provides a transparent S dielectric film made of an oxide of an organometallic compound.
（作用）
本発明によれば、金属酸化物に有機金属化合物や有機金
属化合物の酸化物を混入しているために、有機金属化合
物の長所が生かされ、耐食性等が向上する。(Function) According to the present invention, since an organometallic compound or an oxide of an organometallic compound is mixed into the metal oxide, the advantages of the organometallic compound are utilized and corrosion resistance etc. are improved.
（実施例） 以下、本発明を実施例に基づいて説明する。(Example) Hereinafter, the present invention will be explained based on examples.
図において、１は、絶縁基板であり、ポリエチレンテレ
フタレート等の高分子フイルムやガラス板を用いる。２
はこの絶縁基板１の表面に形成された透明導電膜である
。透明導電膜２は、金属酸化物と、有機金属化合物や有
機金属化合物の酸化物とからなる薄膜である。金ｖＡ′
Ｆａ化物には、ＳｎＯ２やＩｒ＋ｚ Ｏｓ ，ＣｄＯ，
ＺｎＯ、Ｑｄｚ ３ｎ０４ 、ＳｎＯｚに３ｂをドープ
したもの、ＳｎＯｚにＦをドープしたもの、ｌｎｚ０３
に３ｎを添加したもの、ＩｎｚＯｓにＷを添加したもの
、ｌｎ２０３にＭＯを添加したもの、Ｚ ｎ Ｏｋ：．
Ａ １を添加したもの等を用いる。有機金属化合物は、
トリアルキルインジウム、Ｆノアルキルインジウム、ジ
アリールすず、テ１・ラアリールすず、ジアルキルすず
、テトラアル１１レー４ｆ、ジアルキル亜鉛、ジフエニ
ル亜鉛等を用いる、有機金属化合物の酸化物はこれらの
化合物の酸化物を用いる。In the figure, 1 is an insulating substrate, and a polymer film such as polyethylene terephthalate or a glass plate is used. 2
is a transparent conductive film formed on the surface of this insulating substrate 1. The transparent conductive film 2 is a thin film made of a metal oxide, an organometallic compound, or an oxide of an organometallic compound. gold vA'
Fa compounds include SnO2, Ir+zOs, CdO,
ZnO, Qdz 3n04, SnOz doped with 3b, SnOz doped with F, lnz03
3n added to InzOs, W added to InzOs, MO added to ln203, Z n Ok:.
A material containing A1 is used. Organometallic compounds are
Oxides of organometallic compounds using trialkylindium, F-noalkylindium, diaryltin, te-1-laaryltin, dialkyltin, tetraal-11ray-4f, dialkylzinc, diphenylzinc, etc., use oxides of these compounds. .
次に、上記実施例の製造方法を述べると、絶縁基板１に
，酸化インジウム等の金属酸化物と１−リアルキルイン
ジウム等の有機金属化合物からなるターゲットをアルゴ
ンガス中あるいは酸素ガスを導入しながらスパッタリン
グして蒸肴する。また、酸化インジウム等の金属酸化物
からなるターゲットを有機金属化合物のガス雰囲気中あ
るいはさらにＭ累ガス奢導入しながらスパッタリングし
て蒸看する。有機金属化合物が液体の場合には、この液
体中に不活性ガスを輸送ガスとしてバブルして反応ガス
として用いる。Next, the manufacturing method of the above embodiment will be described. A target made of a metal oxide such as indium oxide and an organometallic compound such as 1-realkylindium is placed on an insulating substrate 1 while introducing an argon gas or an oxygen gas. Sputter and steam. Further, a target made of a metal oxide such as indium oxide is sputtered and vaporized in a gas atmosphere of an organometallic compound or while an M gas is introduced. When the organometallic compound is a liquid, an inert gas is bubbled into the liquid as a transport gas and used as a reaction gas.
あるいは、金属酸化物と有機金属化合物とを加熱蒸発し
たり、金属酸化物を有機金属化合物ガス雰囲気中で加熱
蒸発して蒸着（，、でもよく、これ等の場合に酸素ガス
を導入してもよい．
上記実施例と従来例について、耐食性と打鍵性能を測定
した。各実施例の製造条件は次の通りとする。Alternatively, the metal oxide and the organometallic compound may be heated and evaporated, or the metal oxide may be heated and evaporated in an organometallic compound gas atmosphere for vapor deposition. Good. Corrosion resistance and keying performance were measured for the above example and the conventional example. The manufacturing conditions for each example are as follows.
実施例１） 絶縁基板 ターゲット 蒸着方法 キャンの温度 実施例２） ターゲット 導入ガス 厚さ１００μ班、中５０ｃｍのポ リエチレンテレフタレートフィ ルムを０．６ｍ／涌１０の速度で 走行する。Example 1) insulation board target Vapor deposition method can temperature Example 2) target Introduced gas 100μ thick, medium 50cm pot Liethylene terephthalate lum at a speed of 0.6m/w10 Run.
ｌｎｚ ０３ ＋Ｃ２ Ｈｓ Ｓｎ （８ｗｔ％）
真空槽中にアルゴンを５０ｃｃ／
ｎｉｎ ， Ｍ素を１ ０ｃｃ／Ｉｌｉｎで導入し、ス
パッタ電流を２．５Ａ
としてスパッタリングする。lnz 03 +C2 Hs Sn (8 wt%) Argon is introduced at 50 cc/nin and M element at 10 cc/Ilin into a vacuum chamber, and sputtering is performed at a sputtering current of 2.5 A.
５０℃
ｌ ｎ２０ｓ ＋ＳｎＯｚ （５ｗｔ％）加熱ガス化
したトリメチルイン
ジウムをｉ Ｑｃｃ／ｎｉｎ ， Ｍ索を１０ｃｃ／ｌ
１ｉｎで導入する。50℃ ln20s +SnOz (5wt%) heated gasified trimethylindium i Qcc/nin, M cable 10cc/l
Introduce at 1 inch.
これ以外は実施例１と同じ条件と―する。Other than this, the conditions are the same as in Example 1.
実施例３）
ターゲット ｌ ｎｚ ０３ ＋ＳｎＯｚ ＜５ｗｔ
％）導入ガス ｈＯ熱ガス化したジメチルスズを１
０ｃｃ，’ＩＩｉｎ ， ｇ素ガスを１０（；ｃ；／Ｉ
ｉｎ ′Ｔ″導入する．，これ以外は実施例１と同じ条
件とする。Example 3) Target l nz 03 +SnOz <5wt
%) Introduced gas: 1 dimethyltin gasified by hO
0cc,'IIin,g elementary gas to 10(;c;/I
in 'T'' is introduced.Other than this, the conditions are the same as in Example 1.
実施例４）
ターゲ７ ｈ Ｉ ｎ＋３ｎ （５ｗｔ％｝導入ガス
加熱ガス化したジエチルスズをｌ Ｑｃｃ／ｓｉｎ
、酸素を５０ｃｃ／ｌｉｎで導入する。Example 4) Target 7 h I n+3n (5 wt%) Introduced gas Diethyltin heated and gasified l Qcc/sin
, oxygen is introduced at 50 cc/lin.
これ以外は実施例１と同じ条件とする。Other than this, the conditions are the same as in Example 1.
実施例５）
ターゲット Ｉｎ
導入ガス 加熱ガス化したテトライソ１チルススをｉ
Ｑｃｃ，／ｎｉｎ ，酸累を５Ｑｃｃ／旧口で導入す
る。Example 5) Target In Introduced gas Heated gasified tetraiso-1-chillosus
Qcc,/nin, acid accumulation is introduced at 5Qcc/old inlet.
これ以外は実施例１ｔ同じ条ｆ１とする。Other than this, the same article f1 as in the embodiment 1t is used.
実施例６）
ターゲット Ｉｎｚ ０３ ＋ＳｎＯｚ （５ｗｔ導
入ガス 加熱ガス化したテトラーｍ−キシリルスズを
Ｉ Ｑｃｃ／Ｉｌｉｎ ，酸素を１０ｃｃ／ｉｉｎで導
入する。Example 6) Target Inz 03 +SnOz (5 wt introduced gas Tetra m-xylyl tin heated and gasified is introduced at I Qcc/Ilin and oxygen is introduced at 10 cc/iin.
これ以外は実施例１と同じ条件とする。Other than this, the conditions are the same as in Example 1.
実茄例７〉
ターゲット Ｉｎｇｏ３＋テト７−Ｐ−キシリルスズ（
Ｑｗｔ％）
これ以外は実施例１と同じ条件とする。Eggplant Example 7〉 Target Ingo3+Tet7-P-xylyltin (
Qwt%) Other than this, the conditions are the same as in Example 1.
実施例８） 導入ガス アルゴンを５０ｃｃ／ｌｉｎで導入する。Example 8) Introduced gas Argon is introduced at 50 cc/lin.
これ以外は実施例１と同じ条件とする。Other than this, the conditions are the same as in Example 1.
従来例 ターゲット ＩｎｚＯａ これ以外は実施例１と同じ条件とする。Conventional example Target InzOa Other than this, the conditions are the same as in Example 1.
なお、耐食性は温度６５℃、湿度９５％ＲＨの雰囲気中
に５００時間放置後の抵抗変化率を測定した値とする。Note that the corrosion resistance is a value obtained by measuring the rate of change in resistance after being left in an atmosphere of a temperature of 65° C. and a humidity of 95% RH for 500 hours.
また、打鍵性能は荷重３５０ｇを１０回／ ｓｅｃで打
ち当て、１ｍＡの電流を通電した場合のチャタリングが
１ ０ｍ８以上となる打鍵回数とする。In addition, the keystroke performance is defined as the number of keystrokes that result in chattering of 10m8 or more when a load of 350g is applied 10 times/sec and a current of 1mA is applied.
表
表から明らかな通り、本発明によれば従来例に比較して
耐食性の抵抗変化率は０．５５〜０．６５になり、打鍵
性能は２．４倍を越える。As is clear from the table, according to the present invention, the corrosion resistance resistance change rate is 0.55 to 0.65, and the keying performance is more than 2.4 times that of the conventional example.
（発明の効果）
以上の通り、本発明によれば、金ｊｌ酸化物に有機金属
化合物やその酸化物を混入しているために耐食性や打鍵
性能を向上しうる透明′Ｓ電膜が得られる。(Effects of the Invention) As described above, according to the present invention, since an organometallic compound or its oxide is mixed into gold jl oxide, a transparent 'S' electrical film that can improve corrosion resistance and keying performance can be obtained. .
図は本発明の実施例の断面図を示す。 １・・・絶Ｒ基板、 ２・・・透明導電躾。 The figure shows a cross-sectional view of an embodiment of the invention. 1... Absolute R board, 2... Transparent conductive board.
Claims (3)
電膜。(1) A transparent conductive film made of a metal oxide and an organometallic compound.
る透明導電膜。(2) A transparent conductive film consisting of a metal oxide and an oxide of an organometallic compound.
物の酸化物とからなる透明導電膜。(3) A transparent conductive film comprising a metal oxide, an organometallic compound, and an oxide of an organometallic compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16005489A JPH0325803A (en) | 1989-06-22 | 1989-06-22 | Transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16005489A JPH0325803A (en) | 1989-06-22 | 1989-06-22 | Transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0325803A true JPH0325803A (en) | 1991-02-04 |
Family
ID=15706913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16005489A Pending JPH0325803A (en) | 1989-06-22 | 1989-06-22 | Transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0325803A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743490B2 (en) | 2000-01-13 | 2004-06-01 | Sumitomo Rubber Industries, Ltd. | Packaging box for golf ball |
| JP2006152419A (en) * | 2004-12-01 | 2006-06-15 | Ulvac Japan Ltd | Film deposition system, composite wiring film deposition system having the same and thin film production method |
-
1989
- 1989-06-22 JP JP16005489A patent/JPH0325803A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743490B2 (en) | 2000-01-13 | 2004-06-01 | Sumitomo Rubber Industries, Ltd. | Packaging box for golf ball |
| JP2006152419A (en) * | 2004-12-01 | 2006-06-15 | Ulvac Japan Ltd | Film deposition system, composite wiring film deposition system having the same and thin film production method |
| JP4637556B2 (en) * | 2004-12-01 | 2011-02-23 | 株式会社アルバック | Film forming apparatus, composite wiring film forming apparatus including the film forming apparatus, and thin film manufacturing method |
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