JPH032308B2 - - Google Patents
Info
- Publication number
- JPH032308B2 JPH032308B2 JP26902084A JP26902084A JPH032308B2 JP H032308 B2 JPH032308 B2 JP H032308B2 JP 26902084 A JP26902084 A JP 26902084A JP 26902084 A JP26902084 A JP 26902084A JP H032308 B2 JPH032308 B2 JP H032308B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode film
- display panel
- electrode
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 93
- 238000000151 deposition Methods 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000000059 patterning Methods 0.000 claims description 20
- 125000006850 spacer group Chemical group 0.000 claims description 11
- 239000004973 liquid crystal related substance Substances 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004040 coloring Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000004043 dyeing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- -1 For example Substances 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は大型平板型表示パネル用に使用する透
明導電基板の製造法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a transparent conductive substrate used for large flat display panels.
従来の技術
近年、液晶、エレクトロルミネツセンス（以下
ELと略す）等の平板型表示パネルの開発が盛ん
である。これら非発光型或は発光型表示パネルに
於ては、いずれも、少くとも表示を観察する側に
透明導電膜を必要とする。特に多数の文字や映像
を表示する大容量表示パネルでは、電極が第１０
図ａ，ｂに示す如く、Ｘ−Ｙマトリクス状に構成
されており、多数の微細な帯状の透明導電膜を、
均一かつ高歩留りで形成する技術は不可欠であ
る。しかるに従来の透明導電基板の製造法は、
「液晶の最新技術」、松本正一他著、工業調査会、
1983年初版、156頁に示されるように、ガラス、
プラスチツク等の透明基板の上に、スパツタリン
グ、蒸着等の方法により、酸化インジウム
（In2O3）や酸化すず（SnO2）等を、静止ないし
回転する基板上に、ほぼ全面に渡り同時に設けて
透明導電基板を形成してのち、真空系より基板を
取り出して、フオトエツチング法により、電極を
所定の形状にパタン化する方法が一般的であり、
電極形成とパタン化は分離されている。特別な場
合には、基板を所定の形状にパタン化した金属マ
スク等でおおつた状態で、電極を堆積させるいわ
ゆるマスク蒸着法も用いられる。この場合は、電
極形成とパタン化は同時に行うことができるが、
基板が大型化した場合、マスクと基板との密接な
接触が困難になることや、大面積の基板に対し
て、膜厚の均一な電極膜を形成することが困難に
なる等の問題があり、前者のフオトエツチング法
ではたとえば30cm角程度までの基板なら何とか高
精度のパタン化が可能であるがメートルサイズの
基板では、フオトレジストの均一な塗布、ムラの
ない均一な露光、大型高精度フオトマスクの製作
等の技術的困難さを抱えており、一方、マスク蒸
着法では、大型化した際の基板とマスクとの密着
性の困難さ、高精度マスク交換の機構的困難さ等
を伴い、メートルサイズの平板型表示パネル用透
明導電基板の製造は、未開拓なのが現状である。Conventional technology In recent years, liquid crystals, electroluminescence (hereinafter referred to as
The development of flat display panels such as EL (abbreviated as EL) is active. Both of these non-emissive and emissive display panels require a transparent conductive film at least on the side from which the display is viewed. Especially in large-capacity display panels that display a large number of characters and images, the 10th electrode
As shown in Figs.
Techniques for uniform and high-yield formation are essential. However, the conventional manufacturing method for transparent conductive substrates is
“Latest technology of liquid crystals”, Shoichi Matsumoto et al., Kogyo Kenkyukai,
Glass, as shown in 1983 first edition, page 156.
Indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), etc. are simultaneously deposited over almost the entire surface of a stationary or rotating substrate using methods such as sputtering and vapor deposition on a transparent substrate such as plastic. A common method is to form a transparent conductive substrate, remove the substrate from a vacuum system, and pattern the electrodes into a predetermined shape using a photoetching method.
Electrode formation and patterning are separated. In special cases, a so-called mask evaporation method may be used in which electrodes are deposited while the substrate is covered with a metal mask or the like patterned into a predetermined shape. In this case, electrode formation and patterning can be performed at the same time,
When the substrate becomes larger, there are problems such as it becomes difficult to make close contact between the mask and the substrate, and it becomes difficult to form an electrode film with a uniform thickness on a large-area substrate. With the former photo-etching method, for example, it is possible to form highly accurate patterns on substrates up to about 30 cm square, but for meter-sized substrates, uniform application of photoresist, even and uniform exposure, and large, high-precision photomasks are required. On the other hand, the mask evaporation method involves difficulties in adhesion between the substrate and mask when increasing in size, and mechanical difficulties in exchanging high-precision masks. At present, the production of transparent conductive substrates for flat-panel display panels of this size is unexplored.
発明が解決しようとする問題点
本発明は上記問題点に鑑み、大型基板への電極
堆積と、電極のパタン化をほぼ同時に行うと共
に、表示パネル用基板として高付加価値化をはか
つたかつ量産に適した製造法を提供するものであ
る。Problems to be Solved by the Invention In view of the above-mentioned problems, the present invention is designed to deposit electrodes on a large substrate and pattern the electrodes almost simultaneously, and to achieve high added value and mass production as a substrate for display panels. This provides a manufacturing method suitable for
問題点を解決するための手段
本発明の大型導電基板の製造法は、真空系に保
持しうる室内に、少くとも透明基板格納庫、透明
基板、該基板搬送系、該搬送系内に設けられた、
基板の搬送方向と直交する方向にスリツト状に設
けられた電極膜堆積部、電極膜パタン化部、該基
板収納庫が設けられており、該基板搬送中に、そ
の表面上に、パタン化された導電膜を形成するも
のである。Means for Solving the Problems The method for manufacturing a large conductive substrate of the present invention provides at least a transparent substrate storage, a transparent substrate, a substrate transport system, and a transport system provided in a room that can be maintained in a vacuum system. ,
An electrode film deposition section, an electrode film patterning section, and the substrate storage are provided in the form of a slit in a direction perpendicular to the direction in which the substrate is transported. This method forms a conductive film.
作 用
本発明は、上記構成によつて、基板が大型であ
つても全面に渡つて均一な膜厚の電極膜を形成で
き、電極形成とパタン化がほぼ同時に行われ、フ
オトエツチング工程が不要になると共に、同じ技
術を用いて、付加価値の高い表示パネル用基板
を、低コストで製造可能となる。Effects According to the present invention, even if the substrate is large, an electrode film having a uniform thickness can be formed over the entire surface, and electrode formation and patterning are performed almost simultaneously, and a photo-etching process is not required. At the same time, it becomes possible to manufacture display panel substrates with high added value at low cost using the same technology.
実施例
以下本発明の一実施例の大型表示パネル基板の
製造法について、図面を参照しながら説明する。Embodiment A method of manufacturing a large display panel substrate according to an embodiment of the present invention will be described below with reference to the drawings.
第１図ａ，ｂは、本発明の第１の実施例を示
し、真空系１内の、透明基板格納庫２から選ばれ
た透明基板３を、高精度の基板搬送系４によつて
たとえば図の矢印方向に搬送する。基板の搬送方
向と直交する方向に電極膜堆積部５が、スリツト
状に設けられて真空系１内に固定されている。電
極膜堆積部５とは、長尺の抵抗加熱形或は電子ビ
ーム加熱形等の蒸着源ないしは、長尺のターゲツ
トとスパツタ用電極より成るスパツク源にて構成
される。基板３は矢印方向に搬送する過程に於
て、電極膜堆積部５によつて、図では、基板３の
下面に電極膜が堆積される。第１図ａでは、電極
膜堆積と電極のパタン化を同時に行う為に、電極
膜堆積部の上部に、たとえば第１図ｂに示すよう
なマスク板が基板３の下面と接するように設けら
れており、電極膜堆積部５より放射される電極膜
材の蒸気は、第１図ｂの白色部のみしか通過しえ
ない様になつている。これによつて基板３が電極
膜堆積部５を通過し終つた時には、基板３には、
電気的に分離された平行帯状電極が、基板３の搬
送方向と平行に形成されていることになる。この
ようにしてパタン化された電極膜を設けられた基
板３は、基板収納庫７に格納される。 1a and 1b show a first embodiment of the present invention, in which a transparent substrate 3 selected from a transparent substrate storage 2 in a vacuum system 1 is transported by a high-precision substrate transport system 4, for example. Transport in the direction of the arrow. An electrode film deposition section 5 is provided in the form of a slit in a direction perpendicular to the conveying direction of the substrate and is fixed within the vacuum system 1. The electrode film deposition section 5 is composed of a long resistance heating type vapor deposition source, an electron beam heating type vapor deposition source, or a sputtering source consisting of a long target and a sputtering electrode. While the substrate 3 is being transported in the direction of the arrow, the electrode film deposition section 5 deposits an electrode film on the lower surface of the substrate 3 in the figure. In FIG. 1a, in order to perform electrode film deposition and electrode patterning at the same time, a mask plate as shown in FIG. The vapor of the electrode film material radiated from the electrode film deposition section 5 can only pass through the white part shown in FIG. 1b. As a result, when the substrate 3 has finished passing through the electrode film deposition section 5, the substrate 3 has the following properties:
Electrically isolated parallel band-shaped electrodes are formed parallel to the transport direction of the substrate 3. The substrate 3 provided with the patterned electrode film in this way is stored in the substrate storage 7.
図示は省略しているが、必要に応じて基板３の
加熱装置、搬送系部４と格納庫２或は収納庫７と
の隔壁、基板３の位置検出機構、電極膜厚測定系
或は、複数の電極膜堆積部５と電極膜パタン化部
６が設けられる。 Although not shown, a heating device for the substrate 3, a partition wall between the transport system section 4 and the hangar 2 or storage 7, a position detection mechanism for the substrate 3, an electrode film thickness measurement system, or multiple An electrode film deposition section 5 and an electrode film patterning section 6 are provided.
以上のように本実施例によれば、大型基板の電
極膜形成とパタン化を一連の工程によつて処理で
き、量産時の高歩留り、低コストが実現する。 As described above, according to this embodiment, electrode film formation and patterning on a large substrate can be processed through a series of steps, and high yield and low cost can be achieved during mass production.
次に本発明の第２の実施例について第２図に従
つて説明する。但し第２図では真空系等の図示は
省略し第１図に於ける変更部のみを示している。 Next, a second embodiment of the present invention will be described with reference to FIG. However, in FIG. 2, the illustration of the vacuum system, etc. is omitted, and only the changed parts from FIG. 1 are shown.
第１図の構成と異なる点は、電極膜堆積部５に
於て、電極膜パタン化を行う第１図ｂに示すよう
なマスクをとり除き、高エネルギ線照射部８を電
極膜堆積部５の後に設けた点である。本実施例で
は、電極膜は基板３上にいつたんは均一に形成さ
れ、しかる後にイオンビーム、レーザビーム、電
子線ビーム等の高エネルギビームを電極膜の所定
個所に照射し、その部分の電極膜を基板３からと
り除くことによつて電極膜のパタン化が遂行され
る。 The difference from the configuration shown in FIG. 1 is that the mask for patterning the electrode film as shown in FIG. This is the point placed after. In this embodiment, the electrode film is uniformly formed on the substrate 3, and then a high-energy beam such as an ion beam, laser beam, or electron beam is irradiated to a predetermined location on the electrode film, and the electrode film is Patterning of the electrode film is accomplished by removing the film from the substrate 3.
高エネルギー線照射部を設けることによつて電
極膜のパタン化を行う利点は、実施例１のような
マスキング法では困難な、電極間の数10μ程度の
微細な分離を達成できる点にある。 The advantage of patterning the electrode film by providing a high-energy ray irradiation section is that it is possible to achieve fine separation of about several tens of microns between electrodes, which is difficult with the masking method as in Example 1.
ここで、電極膜堆積部および電極膜パタン化部
について詳述する。 Here, the electrode film deposition section and the electrode film patterning section will be described in detail.
スリツト状に設けられた電極膜堆積部は、例え
ば抵抗加熱形の蒸着源を列状に並べたものと矩形
の開口部を有する遮蔽板を第３図のように配置す
ることで構成される。同図ａは電極膜堆積部付近
の平面図、同図ｂはＡ−A′線での断面図を示し
ている。蒸着源３３より発生した電極膜構成材料
の飛来方向は遮蔽板の開口部３２によつて定まる
部分（同図ｂの破線矢印のつくる扇形内部）に制
限される。これと基板搬送を組み合わせることに
より基板のほぼ全域に電極が形成されるわけであ
るが、一方この構成によれば蒸着終点位置を通過
した基板部分にはもはや電極膜は形成されない。
なお、抵抗加熱形の蒸着源のかわりに、電子ビー
ム形の蒸着源を用いたり、あるいは長尺ターゲツ
トのスパツタ源を用いることもできる。 The slit-shaped electrode film deposition section is constructed by arranging, for example, resistance heating type vapor deposition sources in a row and a shielding plate having a rectangular opening as shown in FIG. Figure a shows a plan view of the vicinity of the electrode film deposition area, and figure b shows a cross-sectional view taken along line A-A'. The flying direction of the electrode film constituent material generated from the evaporation source 33 is restricted to a portion determined by the opening 32 of the shielding plate (inside the sector formed by the broken line arrow in FIG. 2B). By combining this with substrate transport, electrodes are formed over almost the entire area of the substrate, but with this configuration, no electrode film is formed on the portion of the substrate that has passed the deposition end point.
Note that instead of the resistance heating type vapor deposition source, an electron beam type vapor deposition source or a long target sputtering source may be used.
電極膜パタン化部の構成例は、第４図と第５図
に示される。第４図は電極膜形成時に電極のパタ
ーニングをも行うもので第１の実施例に対応して
いる。本実施例では、同図ｂに示される開口部４
１をもつ電極パタン化部６（例えば金属マスクよ
り成る）が、同図ａに示すように蒸着源３３と透
明基板３の間の電極膜形成領域に配置されてい
る。この構成により、電極パタン化部６の開口部
４１に対応する基板上にのみ電極膜が形成され、
基板搬送に伴つて、結局、搬送方向に長いストラ
イプ状の電極が形成される。 Examples of the structure of the electrode film patterning section are shown in FIGS. 4 and 5. FIG. 4 corresponds to the first embodiment, in which patterning of the electrode is also performed when forming the electrode film. In this embodiment, the opening 4 shown in FIG.
An electrode patterned portion 6 (for example, made of a metal mask) having a patterned electrode 6 is disposed in an electrode film formation region between the vapor deposition source 33 and the transparent substrate 3, as shown in FIG. With this configuration, the electrode film is formed only on the substrate corresponding to the opening 41 of the electrode patterned part 6,
As the substrate is transported, long striped electrodes are formed in the transport direction.
第５図は、電極膜形成後に電極のパターニング
を行うもので、第２の実施例に対応している。本
図において、高エネルギ線照射部８の領域は蒸着
源からの電極膜構成材料の飛来がない部分である
ため、イオンビームがレーザビームなどの照射に
より電極の不用部分を除去することにより電極パ
タンが形成される。 FIG. 5 shows that the electrode is patterned after the electrode film is formed, and corresponds to the second embodiment. In this figure, since the region of the high-energy beam irradiation section 8 is a region where there is no electrode film constituent material flying from the vapor deposition source, the ion beam removes unnecessary portions of the electrode by irradiation with a laser beam, etc., thereby forming the electrode pattern. is formed.
第６図ａ，ｂ，ｃは本発明の第３の実施例を示
す。第１図、第２図では電極材料として１種類の
ものを考えた。しかるに、透明導電膜として有用
な酸化インジウムや酸化すずの抵抗は実用的には
数Ω／□が限度である。長さメートル級の大型パ
ネルではこの電極抵抗による信号の減衰が表示ム
ラを引き起こすので、電極抵抗はできる限り低く
しなければならない。透明電極の電気抵抗を等価
的に減ずる為に、透明導電膜の一部にクロム、
金、等の金属膜を設ける手法がとられる。すなわ
ち、第６図ａでは、第２の電極膜堆積部を設けた
所に特徴があり、第６図ａの電極膜パタン化部
６，１０の形状を所定の如くに設定しておけば、
一例として第６図ｂに示すように帯状透明電極１
２の上の一部に低抵抗金属膜電極１３が設けら
れ、帯状透明電極１２の開口率を大きく悪化させ
ることなく低抵抗化を達成している。以上のよう
に本実施例では、基板３の搬送系４の途中に、異
種の電極膜堆積部９を設けるのみで、大した工程
の増大につながることなく実用上極めて有用な大
型パネル用電極基板となりうる。尚第６図ａ，ｂ
では、透明導電膜の後に低抵抗電極膜を設けると
して説明したが、両者の順序が入れ替つても良い
ことは言うまでもない。 Figures 6a, b and c show a third embodiment of the invention. In FIGS. 1 and 2, one type of electrode material was considered. However, the resistance of indium oxide and tin oxide, which are useful as transparent conductive films, is practically limited to several Ω/□. In large panels measuring meters in length, signal attenuation due to this electrode resistance causes display unevenness, so the electrode resistance must be kept as low as possible. In order to equivalently reduce the electrical resistance of the transparent electrode, chromium is added to a part of the transparent conductive film.
A method of providing a metal film such as gold is used. That is, FIG. 6a is characterized by the provision of the second electrode film deposition section, and if the shapes of the electrode film patterned sections 6 and 10 in FIG. 6a are set as prescribed,
As an example, as shown in FIG. 6b, a strip-shaped transparent electrode 1
A low-resistance metal film electrode 13 is provided on a portion of the transparent electrode 2 to achieve low resistance without significantly deteriorating the aperture ratio of the transparent strip electrode 12. As described above, in this embodiment, only the electrode film deposition section 9 of different types is provided in the middle of the transport system 4 for the substrate 3, and the electrode substrate for large panels is extremely useful in practice without leading to a large increase in the number of steps. It can be. In addition, Fig. 6 a, b
Although the above description has been made assuming that the low-resistance electrode film is provided after the transparent conductive film, it goes without saying that the order of the two may be reversed.
第７図は本発明の他の実施例を示し、透明導電
膜とパタン状の電極膜を形成してのち、高エネル
ギビームの照射により、所定の領域の金属膜と透
明導電膜をとり除くことによつて、第６図ｂに示
すような基板を形成する工程を示す。高エネルギ
ビームが可視光域の波長のレーザビームの場合透
明導電膜は透明性の故にエネルギー吸収率が低
く、局所的加熱と再蒸発によつて電極膜をパタン
化するのに大きなエネルギを要するのにくらべ
て、金属膜は、透明導電膜よりエネルギを吸収し
易いため、透明導電膜単独の場合よりエネルギー
利用率が良く、より小さいエネルギでパタン化が
実施できる利点を生じる。 FIG. 7 shows another embodiment of the present invention, in which a transparent conductive film and a patterned electrode film are formed, and then the metal film and transparent conductive film in predetermined areas are removed by irradiation with a high-energy beam. Therefore, a process for forming a substrate as shown in FIG. 6b will be described. When the high-energy beam is a laser beam with a wavelength in the visible light range, the transparent conductive film has a low energy absorption rate due to its transparency, and it requires a large amount of energy to pattern the electrode film through local heating and re-evaporation. In comparison, a metal film absorbs energy more easily than a transparent conductive film, so it has the advantage that it has a better energy utilization rate than a transparent conductive film alone and can pattern with less energy.
第８図ａ，ｂ，ｃは本発明の他の実施例を示
し、第１図〜第７図の実施例にくらべて更に、透
明導電基板の付加価値を高めるものである。すな
わち、表示パネルが、たとえばフルカラー表示を
目的とするものであれば、通常透明導電膜に赤、
緑、青等の色フイルタをモザイク状に設け、表示
媒体としては、白−黒に輝度変化するように構成
される。色フイルタは一般には透明電極上にゼラ
チン、ポリビニルアルコール等の染色層を設けて
後、染色したい所以外を覆つて、宿定の色の染色
液に浸漬し、染色層の所定個所を特定の色に染色
する染色タイプや、印刷によつて色フイルタ層を
設ける印刷法、色素溶液中での電着による電着
法、顔料、色素、金属膜等の色材を蒸着する蒸着
法、屈折率の異る、透明無機物を所定の厚さに交
互に数10層重ねた干渉フイルタ膜法等が知られて
いる。 FIGS. 8a, b, and c show other embodiments of the present invention, which further increase the added value of the transparent conductive substrate compared to the embodiments shown in FIGS. 1 to 7. That is, if the display panel is intended for full-color display, for example, the transparent conductive film is usually coated with red,
Color filters such as green and blue are provided in a mosaic pattern, and the display medium is configured so that the brightness changes from white to black. Color filters are generally made by forming a dyed layer of gelatin, polyvinyl alcohol, etc. on a transparent electrode, then covering the areas other than those to be dyed, and immersing the dyed layer in a dyeing solution of a predetermined color. There are various types of dyeing, printing methods that create a color filter layer by printing, electrodeposition methods that use electrodeposition in a dye solution, vapor deposition methods that deposit coloring materials such as pigments, dyes, and metal films, and methods that change the refractive index. An interference filter film method in which several dozen layers of different transparent inorganic materials are alternately stacked to a predetermined thickness is known.
本願では、基本的に基板は真空系内に導入され
ているから、カラーフイルタ層を蒸着法や干渉フ
イルタ膜法によつて設けることは極めて容易であ
る。すなわち、所定形状のマスクを有する色材堆
積部を各色材に対応してたとえば３段設けること
により、赤、緑、青のフイルタ層をモザイク状に
形成でき、各色材堆積部のマスクが機械的な開閉
機構を有しており、基板の搬送に同期してマスク
の開口部を開閉すれば、同一電極上に赤、緑、青
のように画素状に異る色のフイルタ層を形成する
ことも可能である。 In the present application, since the substrate is basically introduced into a vacuum system, it is extremely easy to provide a color filter layer by a vapor deposition method or an interference filter film method. That is, by providing, for example, three stages of coloring material deposition sections each having a predetermined shape of mask, corresponding to each coloring material, red, green, and blue filter layers can be formed in a mosaic shape, and the mask of each coloring material deposition section can be mechanically By opening and closing the opening of the mask in synchronization with the transport of the substrate, filter layers of different colors such as red, green, and blue can be formed on the same electrode in a pixel pattern. is also possible.
干渉フイルタ膜法でも同様に、交互に蒸着材料
の異るフイルタ膜堆積部を複数段設けることによ
り、モザイク状の干渉膜色フイルタを塗り分ける
ことが可能である。 Similarly, in the interference filter film method, by providing a plurality of stages of filter film deposition portions made of different vapor deposition materials alternately, it is possible to separately coat a mosaic-like interference film color filter.
第８図ａ，ｂでは、色フイルタは透明電極の上
に設けるとして説明したが、一般には、電圧ロス
をなくす為に、カラーフイルタ層上に透明電極層
のある方が望ましく透明電極の堆積をモザイクフ
イルタ層を形成して後にすることによつて容易に
実現できる。 In FIGS. 8a and 8b, it has been explained that the color filter is provided on the transparent electrode, but in general, in order to eliminate voltage loss, it is preferable to have a transparent electrode layer on the color filter layer, and the transparent electrode is not deposited. This can be easily realized by forming a mosaic filter layer later.
一方、図示は省略しているが、透明電極用基板
が、液晶表示パネル用のものである場合、通常、
基板の最上層には液晶分子を配向させる為の配向
膜を形成する必要がある。配向膜はポリイミド、
ポリビニルアルコール等の有機物、SiO等の無機
物が用いられ、これらは通常有効表示面全面に設
けられる。この目的の為には、膜堆積の最終段
に、配向膜堆積部を設ければよい。この際配向膜
を、斜方蒸着により設けると、後に配向膜のラビ
ング工程は省略できて更に都合がよい。たとえば
公知の２回斜方蒸着配向膜形成法では、基板面に
対する蒸着角度と、スリツト状の配向膜堆積部を
各々基板の搬送方向に対して所定の角度を持つて
２回蒸着を行えば、後にラビング工程を必要とす
ることなく、たとえば、ネマチツク液晶を一様な
小さなチルト角を有する状態で基板に対して平行
に配列させることができる。 On the other hand, although not shown, when the transparent electrode substrate is for a liquid crystal display panel, usually
It is necessary to form an alignment film on the top layer of the substrate to align liquid crystal molecules. The alignment film is polyimide,
Organic substances such as polyvinyl alcohol and inorganic substances such as SiO are used, and these are usually provided over the entire effective display surface. For this purpose, an alignment film deposition section may be provided at the final stage of film deposition. At this time, it is more convenient to provide the alignment film by oblique vapor deposition, since the subsequent rubbing step of the alignment film can be omitted. For example, in the known two-time oblique evaporation alignment film forming method, if the evaporation is performed twice with the evaporation angle relative to the substrate surface and the slit-shaped alignment film deposited portion each set at a predetermined angle with respect to the transport direction of the substrate, For example, nematic liquid crystals can be aligned parallel to the substrate with a uniform small tilt angle without the need for a subsequent rubbing step.
本発明では堆積膜はこれだけでつきるものでは
ない。特に大型基板を用いた大型表示パネルを構
成しようとする場合、対向する電極間のギヤツプ
精度は極めて重要である。特に電極間に、液晶等
がはさまれて構成される液晶表示パネルでは、電
極間ギヤツプは通常数ミクロンから10数ミクロン
であり、大面積に渡つて均一なギヤツプに保持し
ないと、濃度ムラ、干接色、応答速度ムラ等を生
じて表示パネルとして使いものにならなくなる。
本発明では電極間ギヤツプを均一に保つ為に、細
線状のスペーサを、電極間に均一に設けることは
極めて容易である。すなわち、パタン化された電
極形成等と同様に、基板搬送系と直交してスリツ
ト状のスペーサ材堆積部を設け、スペーサ材堆積
部にはパタン化された電極部のみを覆うような形
状のマスクを設けておけば、電極と平行にかつ、
同一面上の電極間スペース部に、所定の厚みのス
ベーサを均一に設けることができ、表示パネルの
付加価値は更に増大する。たとえば液晶表示パネ
ルは一対の電極基板をスペーサの分だけ間隔をあ
けて周辺に於て貼合せたほぼ密閉構造とし後に液
晶をパネルの一部に設けられている注入口より注
入してのち注入口を封止し完全密閉状態にして出
来上る訳だが、スペーサがパネルの相対向する辺
を横切つてしまうと、液晶の注入が困難になる。
従つて第９図ａ，ｂに示すようにパネル３の搬送
のタイミングに合せて、スペーサの堆積を制御し
基板の全域に渡つて設けない様にする必要があ
る。 In the present invention, this is not the only deposited film. Particularly when constructing a large display panel using a large substrate, the gap accuracy between opposing electrodes is extremely important. In particular, in a liquid crystal display panel consisting of a liquid crystal sandwiched between electrodes, the gap between the electrodes is usually from a few microns to more than 10 microns, and if the gap is not maintained uniformly over a large area, density unevenness may occur. It becomes unusable as a display panel due to dry color contact, uneven response speed, etc.
In the present invention, it is extremely easy to uniformly provide thin wire spacers between the electrodes in order to maintain a uniform gap between the electrodes. In other words, similar to patterned electrode formation, a slit-shaped spacer material deposition section is provided perpendicular to the substrate transport system, and a mask shaped to cover only the patterned electrode section is provided in the spacer material deposition section. If you provide it, it will be parallel to the electrode and
A spacer having a predetermined thickness can be uniformly provided in the inter-electrode space portion on the same surface, further increasing the added value of the display panel. For example, a liquid crystal display panel has a nearly sealed structure in which a pair of electrode substrates are bonded together at the periphery with a spacer space between them, and then liquid crystal is injected through an injection port provided in a part of the panel. However, if the spacer crosses opposite sides of the panel, it becomes difficult to inject liquid crystal.
Therefore, as shown in FIGS. 9a and 9b, it is necessary to control the deposition of spacers in accordance with the timing of conveyance of the panel 3 so as not to deposit them over the entire area of the substrate.
この様に、均一な高さのたとえば、金属酸化物
等よりなる絶縁性スペーサを、表示領域のほぼ全
面に均一に設けておけば、パネルがメートルサイ
ズの大きさになつても、対向する他方の電極との
間の電極間ギヤツプは均一にスペーサの厚みで規
定され、表示領域全面に渡つて均一なギヤツプが
維持できる。但し、電極間に表示媒体をはさんで
のち、パネル内は外部より減圧に保たれる必要が
ある。尚本実施例で、基板は複数枚に分離して扱
うと考えているが、透明プラスチツクフイルム等
を基板に用いる時は連続ロール状で扱つてよいこ
とは言うまでもない。 In this way, if insulating spacers made of, for example, metal oxide and having a uniform height are provided uniformly over almost the entire display area, even if the panel becomes meter-sized, the opposite The inter-electrode gap between the two electrodes is uniformly defined by the thickness of the spacer, and a uniform gap can be maintained over the entire display area. However, after the display medium is sandwiched between the electrodes, the inside of the panel must be kept at a reduced pressure from the outside. In this embodiment, it is assumed that the substrate is handled separately into a plurality of sheets, but it goes without saying that when a transparent plastic film or the like is used as the substrate, it may be handled in a continuous roll form.
発明の効果
以上のように本発明は、大型基板に、同時に電
極膜を形成してのちパタン化したり、マスクを用
いて同時に全面にパタン化された電極膜を形成す
る従来の方法と異つて、大型基板を所定方向に搬
送し、搬送中に局所的に電極膜を均一にないしパ
タン化された状態で堆積させ、格納庫に納まつた
時はほぼ基板として完成された状態まで一連の工
程をやり終える所に特徴があり、同一の真空系シ
ステム中で、真空を度々破ることなく、必要な膜
形成や、膜のパタン化を実施してしまうため、極
めて量産性に富むと同時に、低コストで付加価値
の高い、表示パネル用電極基板を形成することが
できるものである。今後の、メートルサイズ級の
大型平板型表示パネルの製造に当つて、利用価値
は極めて高く、民生用及び産業用の、商品位大
型、平板型デイスプレイの低コスト製造に大きく
貢献するものである。Effects of the Invention As described above, the present invention differs from conventional methods in which an electrode film is simultaneously formed on a large substrate and then patterned, or a patterned electrode film is simultaneously formed on the entire surface using a mask. A large substrate is transported in a predetermined direction, an electrode film is deposited locally in a uniform or patterned state during transport, and a series of steps are carried out until the board is almost completed when it is stored in a hangar. It is characterized by the fact that the required film formation and film patterning can be carried out in the same vacuum system without repeatedly breaking the vacuum, making it extremely suitable for mass production and at low cost. It is possible to form an electrode substrate for a display panel with high added value. It will have extremely high utility value in the future production of meter-sized large-sized flat display panels, and will greatly contribute to the low-cost production of commercially large, flat-panel displays for consumer and industrial use.
第１図ａは本発明の第１の実施例における大型
表示パネル基板の製造法を示す図、第１図ｂは、
第１図ａの電極膜パタン化部に用いるマスク板の
正面図、第２図は本発明の第２の実施例における
大型表示パネル基板の製造法を示す図、第３図ａ
は電極膜堆積部近傍の平面図、第３図ｂは第３図
ａにおけるＡ−A′線での断面図、第４図ａ，ｂ
および第５図ａ，ｂは電極膜パタン化部の構成
図、第６図ａは本本発明の第３の実施例に於ける
改良された大型表示パネル基板の製造法を示す
図、第６図ｂ，ｃは第６図ａの方法によつて製造
された大型表示パネル基板の一部正面図とＡ−
A′切断面図、第７図は本発明の第４の実施例に
於ける他の大型表示パネル基板の製造法を示す
図、第８図ａは、本発明のさらに付加価値を向上
させた、カラー大型表示パネル用基板の製造法を
示す図、第８図ｂ、第８図ｃは第８図ａの実施例
で製造されたモザイク状カラーフイルタを設けら
れた基板の一部正面図とＢ−B′に於ける切断面
図、第９図ａ，ｂは本発明の他の実施例に基づい
て製造されたスペーサ付き大型表示パネル基板の
正面図とＣ−C′における切断面図、第１０図ａ，
ｂは従来の平板型Ｘ−Ｙマトリクス表示パネルで
ある。
１……真空系、２……透明基板格納庫、３……
透明基板、４……透明基板搬送系、５……電極膜
堆積部、６……電極膜パターン化部、７……基板
収納庫。
FIG. 1a is a diagram showing a method for manufacturing a large display panel substrate according to the first embodiment of the present invention, and FIG.
FIG. 1a is a front view of a mask plate used in the electrode film patterning section, FIG. 2 is a diagram showing a method for manufacturing a large display panel substrate in the second embodiment of the present invention, and FIG. 3a
is a plan view of the vicinity of the electrode film deposition part, FIG. 3b is a sectional view taken along line A-A' in FIG. 3a, and FIGS. 4a and b
5a and 5b are block diagrams of the electrode film patterning section, and FIG. 6a is a diagram showing the manufacturing method of an improved large-sized display panel substrate in the third embodiment of the present invention. b, c are partial front views of a large display panel substrate manufactured by the method shown in Fig. 6a, and A-
A′ cross-sectional view, FIG. 7 is a diagram showing another method of manufacturing a large display panel substrate in the fourth embodiment of the present invention, and FIG. FIG. 8b and FIG. 8c are partial front views of a substrate provided with a mosaic color filter manufactured in the embodiment of FIG. 8a, and FIGS. 9a and 9b are a front view of a large display panel substrate with spacers manufactured based on another embodiment of the present invention, and a sectional view taken along C-C', Figure 10a,
b is a conventional flat type XY matrix display panel. 1... Vacuum system, 2... Transparent substrate hangar, 3...
Transparent substrate, 4... Transparent substrate transport system, 5... Electrode film deposition section, 6... Electrode film patterning section, 7... Substrate storage.
Claims (1)
板格納庫、透明基板、該基板搬送系、該搬送系内
に設けられた基板の搬送方向と直交する方向に設
けられた電極膜堆積部、電極膜堆積時に電極膜の
堆積を部分的に遮蔽する手段あるいは電極膜堆積
後に堆積された電極膜を部分的に除去する手段を
備えた電極膜パタン化部、該基板収納庫が設けら
れており、該基板搬送中に、その表面上にパタン
化された透明導電膜を形成することを特徴とする
大型表示パネル基板の製造法。 ２ スリツト状に設けられた電極膜堆積部は２以
上設けられることを特徴とする特許請求の範囲第
１項記載の大型表示パネル基板の製造法。 ３ カラーフイルタ膜形成部が複数個設けられて
いることを特徴する特許請求の範囲第１項記載の
大型表示パネル基板の製造法。 ４ 液晶配向膜形成部が設けられていることを特
許請求の範囲第１項記載の大型表示パネル基板の
製造法。 ５ 電極間スペーサ形成部が設けられていること
を特徴とする特許請求の範囲第１項記載の大型表
示パネル基板の製造法。 ６ 電極膜パタン化部は、電極膜堆積部に設けら
れたマスク層であることを特徴とする特許請求の
範囲第１項記載の大型表示パネル基板の製造法。 ７ 電極膜パタン化部は、イオンビーム、レーザ
ビーム、電子線より選ばれた高エネルギビームで
あることを特徴とする特許請求の範囲第１項記載
の大型表示パネル基板の製造法。[Scope of Claims] 1 At least a transparent substrate storage, a transparent substrate, a substrate transfer system, and a substrate provided in the transfer system in a direction perpendicular to the substrate transfer direction in a room that can be maintained in a vacuum system. an electrode film deposition section, an electrode film patterning section equipped with a means for partially shielding the electrode film during electrode film deposition or a means for partially removing the deposited electrode film after the electrode film is deposited; and the substrate storage. 1. A method for manufacturing a large display panel substrate, characterized in that a patterned transparent conductive film is formed on the surface of the substrate during transportation of the substrate. 2. The method of manufacturing a large display panel substrate according to claim 1, wherein two or more electrode film deposition portions are provided in the form of a slit. 3. The method of manufacturing a large display panel substrate according to claim 1, wherein a plurality of color filter film forming portions are provided. 4. The method for manufacturing a large display panel substrate according to claim 1, wherein a liquid crystal alignment film forming section is provided. 5. The method of manufacturing a large display panel substrate according to claim 1, wherein an interelectrode spacer forming portion is provided. 6. The method for manufacturing a large-sized display panel substrate according to claim 1, wherein the electrode film patterning section is a mask layer provided in the electrode film deposition section. 7. The method for manufacturing a large display panel substrate according to claim 1, wherein the electrode film patterning portion is a high-energy beam selected from ion beam, laser beam, and electron beam.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59269020A JPS61233771A (en) | 1984-12-19 | 1984-12-19 | Manufacturing method for large display panel substrates |
| US06/810,713 US4775549A (en) | 1984-12-19 | 1985-12-19 | Method of producing a substrate structure for a large size display panel and an apparatus for producing the substrate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59269020A JPS61233771A (en) | 1984-12-19 | 1984-12-19 | Manufacturing method for large display panel substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61233771A JPS61233771A (en) | 1986-10-18 |
| JPH032308B2 true JPH032308B2 (en) | 1991-01-14 |
Family
ID=17466557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59269020A Granted JPS61233771A (en) | 1984-12-19 | 1984-12-19 | Manufacturing method for large display panel substrates |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61233771A (en) |
-
1984
- 1984-12-19 JP JP59269020A patent/JPS61233771A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61233771A (en) | 1986-10-18 |
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| Publication | Publication Date | Title |
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