JPH03229868A - Film forming device - Google Patents
Film forming deviceInfo
- Publication number
- JPH03229868A JPH03229868A JP2395190A JP2395190A JPH03229868A JP H03229868 A JPH03229868 A JP H03229868A JP 2395190 A JP2395190 A JP 2395190A JP 2395190 A JP2395190 A JP 2395190A JP H03229868 A JPH03229868 A JP H03229868A
- Authority
- JP
- Japan
- Prior art keywords
- cylindrical member
- target
- film forming
- film
- reactance element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000002500 ions Chemical class 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は均一な膜を形成する膜形成装置に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a film forming apparatus that forms a uniform film.
（従来の技術）
第２図は筒状部材の内面に膜を形成する膜形成装置の概
略図を示したものである。図中１は筒状部材、２ａ、２
ｂは絶縁部材で、夫々前記筒状部材１の両端に密封する
ように嵌込まれている。３は前記筒状部材１の軸心部に
配置された棒状のターゲット、４は排気装置、５はガス
供給装置、６は高周波電源で、前記筒状部材１の送端部
７とターゲット３の一端部間に接続されている。(Prior Art) FIG. 2 shows a schematic diagram of a film forming apparatus for forming a film on the inner surface of a cylindrical member. In the figure, 1 is a cylindrical member, 2a, 2
Insulating members b are fitted into both ends of the cylindrical member 1 in a sealed manner. Reference numeral 3 denotes a rod-shaped target disposed at the axial center of the cylindrical member 1, 4 an exhaust device, 5 a gas supply device, and 6 a high frequency power source that connects the sending end 7 of the cylindrical member 1 and the target 3. Connected between one end.
この様な膜形成装置において、先ず、前記筒状部材１内
を排気装置４により、例えば１Ｏ−５Ｔ。In such a film forming apparatus, first, the inside of the cylindrical member 1 is pumped to a temperature of, for example, 10-5T using the exhaust device 4.
ｒ「程度に排気する。次に前記ガス供給装置５から、例
えばＡｒガスを前記筒状部材１内に供給し、該筒状部材
内を１Ｏ−２Ｔｏｒｒ程度の圧力状態にする。そして、
前記高周波電源６から前記筒状部材１の送端部７と前記
ターゲット３の一端部の間に高周波電圧を印加すると、
前記筒状部材１内にグロー放電が起こる。該放電により
発生したＡｒイオンはターゲット２を激しく叩く為、該
ターゲット２から該ターゲットを成す金属粒子が放出さ
れ、該粒子が前記筒状部材１の内面に膜状に付着する。Then, for example, Ar gas is supplied from the gas supply device 5 into the cylindrical member 1 to bring the inside of the cylindrical member into a pressure state of about 10-2 Torr.
When a high frequency voltage is applied from the high frequency power supply 6 between the sending end portion 7 of the cylindrical member 1 and one end portion of the target 3,
Glow discharge occurs within the cylindrical member 1. Since the Ar ions generated by the discharge violently hit the target 2, metal particles constituting the target are ejected from the target 2, and the particles adhere to the inner surface of the cylindrical member 1 in the form of a film.
（発明か解決しようとする課題）
所で、第３図は内導体と外導体から成る同軸管を示した
ものであるが、該同軸管を特性インピーダンスＺ。の線
路とみなし、この様な同軸管の一端（送端）に交流電源
を接続し、他端（終端）にＺｌ？の負荷を接続した場合
、該同軸管の終端（０）から距離Ｘにおける同軸管内の
電圧■は、終端（０）の電圧をＶＲとすれば、
Ｖ−Ｖ、 （ｃｏｓβｘ十ｊ （Ｚｏ ／ ＺＲ）ｓ
ｉｎβＸ） ・・・・・・（１）（但し、
λは電圧の波長で、β＝２π／λである）で表される。(Problem to be solved by the invention) By the way, FIG. 3 shows a coaxial tube consisting of an inner conductor and an outer conductor, and the coaxial tube has a characteristic impedance Z. Connect an AC power source to one end (transmission end) of such a coaxial pipe, and connect Zl? to the other end (terminal end). When a load is connected, the voltage in the coaxial tube at a distance )s
inβX) ・・・・・・(1) (However,
λ is the wavelength of the voltage, expressed as β=2π/λ).
さて、前記第２図に示した膜形成装置は、この様な同軸
管において、終端が開放されたものと等価と見なせるの
で、該膜形成装置の筒状部材１の終端から距離Ｘにおけ
る該筒状部材１内の電圧Ｖは、前記（１）式でＺＲ＝閃
とじて、
Ｖ′ＭＶＲＣＯ８βｘ＝ＶＲｃｏｓ （２πｘ／λ）
（２）
と表される。即ち、該筒状部材１内には第４図に示す如
きλ／４毎に電圧の最強点と零の点が交互に繰り返され
る定在波が発生していることになる。Now, since the film forming apparatus shown in FIG. 2 can be considered equivalent to such a coaxial pipe with an open end, the film forming apparatus shown in FIG. The voltage V in the shaped member 1 is expressed by the equation (1) above, where ZR=flash, V'MVRCO8βx=VRcos (2πx/λ)
(2) It is expressed as That is, a standing wave is generated in the cylindrical member 1, as shown in FIG. 4, in which the strongest point and the point of zero voltage are alternately repeated every λ/4.
従って、該筒状部材１内にはλ／４間隔てプラズマの強
い箇所と弱い箇所が交互に現れる。その為に、ターゲツ
ト２全体が一様にスパッタされずに場所によってスパッ
タレートが異なってしまう。Therefore, areas where the plasma is strong and areas where the plasma is weak appear alternately within the cylindrical member 1 at intervals of λ/4. Therefore, the entire target 2 is not sputtered uniformly, and the sputtering rate varies depending on the location.
その為に、該筒状部材１の内面には厚さの均一でない膜
か形成される。Therefore, a film with non-uniform thickness is formed on the inner surface of the cylindrical member 1.
本発明はこの様な問題を解決する事を目的としたもので
ある。The present invention is aimed at solving such problems.
（課題を解決する為の手段）
その為に本発明は、両端を絶縁部材により密封した筒状
部材、該筒状部材内を排気する排気装置、該筒状部材内
にガスを供給するガス供給装置、該筒状部材の軸心部に
配置された棒状のターゲット、該筒状部材の一端部と前
記ターゲットの一端部間に交流電圧を印加する電源を備
えた膜形成装置において、前記筒状部材の他端部に可変
リアクタンス素子を接続する様に成した。(Means for Solving the Problems) For this purpose, the present invention provides a cylindrical member whose both ends are sealed with an insulating member, an exhaust device that exhausts the inside of the cylindrical member, and a gas supply supply that supplies gas into the cylindrical member. A film forming apparatus comprising: a rod-shaped target disposed at the axial center of the cylindrical member; and a power source for applying an alternating current voltage between one end of the cylindrical member and one end of the target; A variable reactance element was connected to the other end of the member.
（実施例）
第１図は本発明の一実施例を示した膜形成装置の概略図
である。図中前記第２図と同一番号を付したものは同一
構成要素である。図中１１はインダクタンス素子９とバ
リコン（キャパシタンス素子）１０から成る可変リアク
タンス素子である。(Example) FIG. 1 is a schematic diagram of a film forming apparatus showing an example of the present invention. In the figure, the same components as in FIG. 2 are denoted by the same numbers. In the figure, reference numeral 11 denotes a variable reactance element consisting of an inductance element 9 and a variable capacitor (capacitance element) 10.
該可変リアクタンス素子１１は筒状部材ｌの終端８とタ
ーゲット３の他端部との間に接続されている。The variable reactance element 11 is connected between the terminal end 8 of the cylindrical member l and the other end of the target 3.
この様な膜形成装置において、先ず、前記筒状部材１内
を排気装置４により、例えばＩＱ−’Ｔ。In such a film forming apparatus, first, the inside of the cylindrical member 1 is heated by the exhaust device 4, for example, by IQ-'T.
ｒｒ程度に排気する。次に前記ガス供給装置５から、例
えばＡ「ガスを前記筒状部材１内に供給し、該筒状部材
内を１Ｏ−２Ｔｏｒｒ程度の圧力状態にする。そして、
前記高周波電源６から前記筒状部材１の一端部と前記タ
ーゲット３の一端部に間に高周波電圧を印加すると、前
記筒状部材１内にグロー放電が起こる。該放電により発
生したＡｒイオンはターゲット２を激しく叩く為、該タ
ーゲット２から該ターゲットを成す金属粒子が放出され
、該粒子が前記筒状部材１の内面に膜状に付着する。Exhaust to about rr. Next, from the gas supply device 5, for example, gas A is supplied into the cylindrical member 1 to bring the inside of the cylindrical member into a pressure state of about 10-2 Torr.
When a high frequency voltage is applied from the high frequency power source 6 between one end of the cylindrical member 1 and one end of the target 3, glow discharge occurs within the cylindrical member 1. Since the Ar ions generated by the discharge violently hit the target 2, metal particles constituting the target are ejected from the target 2, and the particles adhere to the inner surface of the cylindrical member 1 in the form of a film.
さて、前記可変リアクタンス素子１１のリアクタンスを
Ｘとすると、前記筒状部材１内の終端から距離Ｘにおけ
る電圧■１は、前記第（１）式においてＺＲ＝ｊＸを代
入すると、
Ｖ、＝Ｖ、（ｃｏｓβｘ＋ （Ｚｏ ／Ｘ） ｓｉｎ
ｌ３ｘｌ＝ ｆｌ ＋ （Ｚｏ ／ Ｘ） ２） ”２
ｓｉｎ （βＸ＋θ） ・・・・・
・（３）（但し、ｔａｎθ−Ｘ／Ｚｏ）
で表される。Now, assuming that the reactance of the variable reactance element 11 is X, the voltage (1) at a distance X from the end of the cylindrical member 1 is calculated as follows by substituting ZR=jX in the equation (1): V, =V, (cosβx+ (Zo /X) sin
l3xl= fl + (Zo / X) 2) ”2
sin (βX+θ)...
・(3) (However, tanθ-X/Zo) It is expressed as follows.
そこで、例えば、前記筒状部材１の特性インピーダンス
Ｚ。を５０Ωとし、インダクタンス素子９のインダクタ
ンスを０，５２μＨに固定して、バリコン１０のキャパ
シタンスの値を３０ｐＦから５００ｐＦの間で変化させ
ると、前記（３）式におけるθ、即ち、前記筒状部材１
内に発生する電圧Ｖ１の位相を４５°〜−４５° （即
ち９０°）変化させることができる。Therefore, for example, the characteristic impedance Z of the cylindrical member 1. is 50 Ω, the inductance of the inductance element 9 is fixed at 0.52 μH, and the value of the capacitance of the variable capacitor 10 is varied between 30 pF and 500 pF.
The phase of the voltage V1 generated within can be changed by 45° to -45° (ie, 90°).
従って、前記第１図の実施例におりて、バリコン１０の
キャパシタンスの値を定期的に３０ｐＦから５００ｐＦ
に変化させると、定期的に前記筒状部材ｌ内の定在波の
位置をλ／２まで動かす事ができる。それにより、前記
筒状部材１内のブラズマ密度が時間的に平均化される。Therefore, in the embodiment of FIG. 1, the capacitance value of the variable capacitor 10 is periodically changed from 30 pF to 500 pF.
By changing the position of the standing wave within the cylindrical member l, it is possible to periodically move the position of the standing wave up to λ/2. Thereby, the plasma density within the cylindrical member 1 is averaged over time.
その為、ターゲット全体か時間的に一様にスパッタリン
グされ、それにより、筒状部材１の内面には均一な膜が
形成される。Therefore, the entire target is sputtered uniformly over time, thereby forming a uniform film on the inner surface of the cylindrical member 1.
尚、前記実施例では可変リアクタンス素子をインダクタ
ンス素子とバリコンで形成したが、該可変リアクタンス
素子をバリコンのみて形成したり、可変インダクタンス
のみで形成して夫々のキヤパシタンス値、若しくはイン
ダクタンス値を変化させて前記筒状部板ｌ内に発生する
電圧の位相を９０°まで変化させてもよい。In the above embodiments, the variable reactance element was formed of an inductance element and a variable capacitor, but the variable reactance element may be formed only of a variable capacitor or only a variable inductance to change the capacitance value or inductance value of each. The phase of the voltage generated in the cylindrical plate l may be changed by up to 90°.
又、可変リアクタンス素子の作動を手動で行っても自動
化してもよい。Additionally, the variable reactance element may be operated manually or automatically.
（発明の効果）
本発明は、両端を絶縁部材により密封した筒状部材、該
筒状部材内を排気する排気装置、該筒状部材内にガスを
供給するガス供給装置、該筒状部材の軸心部に配置され
た棒状のターゲット、該筒状部材の一端部と前記ターゲ
ットの一端部間に交流電圧を印加する電源を備えた膜形
成装置において、前記筒状部材の他端部に可変リアクタ
ンス素子を接続し、該リアクタンス素子のリアクタンス
値を可変としたので、筒状部材１内に発生する定在波の
位置を変化させる事ができる。その為に、前記筒状部材
１内のプラズマ密度が時間的に平均化されるので、該筒
状部材１内面に均一な膜を形成することかできる。(Effects of the Invention) The present invention provides a cylindrical member whose both ends are sealed with an insulating member, an exhaust device that exhausts the inside of the cylindrical member, a gas supply device that supplies gas into the cylindrical member, and a gas supply device that supplies gas into the cylindrical member. A film forming apparatus including a rod-shaped target disposed at the axial center, and a power supply that applies an alternating current voltage between one end of the cylindrical member and one end of the target, wherein a variable voltage is provided at the other end of the cylindrical member. Since a reactance element is connected and the reactance value of the reactance element is made variable, the position of the standing wave generated within the cylindrical member 1 can be changed. Therefore, since the plasma density within the cylindrical member 1 is averaged over time, a uniform film can be formed on the inner surface of the cylindrical member 1.
第１図は本発明の一実施例を示した膜形成装置の概略図
、第２図は従来の膜形成装置の概略図、第３図は同軸管
内に発生する電圧を説明するために用いた図、第４図は
定在波の説明のために用いた図である。
１・・・筒状部材、２ａ、２ｂ・・・絶縁物、３・・・
ターゲット、４・・・排気装置、５・・・ガス供給装置
、６・・・高周波電源、７・・・筒状部材送端部、８・
・・筒状部材終端部、９・・・インダクタンス素子、１
０・・・バリコン、１１・・・可変リアクタンス素子Fig. 1 is a schematic diagram of a film forming apparatus showing an embodiment of the present invention, Fig. 2 is a schematic diagram of a conventional film forming apparatus, and Fig. 3 is a diagram used to explain the voltage generated in the coaxial tube. 4 are diagrams used to explain standing waves. 1... Cylindrical member, 2a, 2b... Insulator, 3...
Target, 4... Exhaust device, 5... Gas supply device, 6... High frequency power supply, 7... Cylindrical member sending end portion, 8...
...Typical member end portion, 9...Inductance element, 1
0... Variable capacitor, 11... Variable reactance element
Claims (1)
を排気する排気装置、該筒状部材内にガスを供給するガ
ス供給装置、該筒状部材の軸心部に配置された棒状のタ
ーゲット、該筒状部材の一端部と前記ターゲットの一端
部間に交流電圧を印加する電源を備えた膜形成装置にお
いて、前記筒状部材の他端部に可変リアクタンス素子を
接続した事を特徴とする膜形成装置。A cylindrical member whose both ends are sealed with an insulating member, an exhaust device that exhausts the inside of the cylindrical member, a gas supply device that supplies gas into the cylindrical member, and a rod-shaped member disposed at the axial center of the cylindrical member. A film forming apparatus comprising a target and a power source for applying an alternating current voltage between one end of the cylindrical member and one end of the target, characterized in that a variable reactance element is connected to the other end of the cylindrical member. Film forming equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2395190A JPH03229868A (en) | 1990-02-02 | 1990-02-02 | Film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2395190A JPH03229868A (en) | 1990-02-02 | 1990-02-02 | Film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03229868A true JPH03229868A (en) | 1991-10-11 |
Family
ID=12124860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2395190A Pending JPH03229868A (en) | 1990-02-02 | 1990-02-02 | Film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03229868A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001003159A (en) * | 1999-06-18 | 2001-01-09 | Shin Meiwa Ind Co Ltd | Formation of coating film and structural member with coating film formed thereon |
-
1990
- 1990-02-02 JP JP2395190A patent/JPH03229868A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001003159A (en) * | 1999-06-18 | 2001-01-09 | Shin Meiwa Ind Co Ltd | Formation of coating film and structural member with coating film formed thereon |
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