JPH03222476A - Electric control cell - Google Patents
Electric control cellInfo
- Publication number
- JPH03222476A JPH03222476A JP2018310A JP1831090A JPH03222476A JP H03222476 A JPH03222476 A JP H03222476A JP 2018310 A JP2018310 A JP 2018310A JP 1831090 A JP1831090 A JP 1831090A JP H03222476 A JPH03222476 A JP H03222476A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- dopant
- conjugated polymer
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002019 doping agent Substances 0.000 claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 229920000642 polymer Polymers 0.000 claims abstract description 15
- 229920000547 conjugated polymer Polymers 0.000 claims description 36
- 229920001940 conductive polymer Polymers 0.000 claims description 7
- -1 polyp-phenylene Polymers 0.000 claims description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 229920000831 ionic polymer Polymers 0.000 claims description 3
- 229920001197 polyacetylene Polymers 0.000 claims description 3
- 229920000128 polypyrrole Polymers 0.000 claims description 3
- 229920000123 polythiophene Polymers 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Chemical group 0.000 claims 1
- 150000003983 crown ethers Chemical group 0.000 claims 1
- 239000000370 acceptor Substances 0.000 abstract description 2
- 230000009918 complex formation Effects 0.000 abstract 2
- 239000002131 composite material Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 56
- 238000006116 polymerization reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920006112 polar polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明（よ 半導体装置 メモリー装置に用いられる電
子共役性高分子半導体層を有する新規な電気制御素子に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a novel electrical control element having an electronically conjugated polymer semiconductor layer used in a memory device.
従来の技術
導電性高分子はポリアセチレン、ポリピローノにポリチ
オフェン、ポリアニリス ポリアセンなどの大きく広が
った共役π電子系をもつ高分子よりなり１、電子供与体
（金属イオンなど）または電子受容体（ルイス酸、プロ
トン酸などのアニオン）をドーパントとして含有して高
導電性を示すことが広く知られている。Conventional conductive polymers consist of polymers with a widely spread conjugated π-electron system, such as polyacetylene, polypyrono, polythiophene, polyanilis, and polyacene1. It is widely known that it exhibits high conductivity when it contains an anion such as an acid as a dopant.
発明が解決しようとする課題
ドーパントは高分子マトリクス中を電場により拡散し導
電率を変化させてしまうという大きな欠点を有してい九
本発明者はこの欠点を逆に利用した新規な電気制御素子
およびその応用装置をすでに特願平１−１９２９６１号
にて開示した これは一対の電極間に電子共役性高分子
半導体層と易動性ドーパント保持層とを重ねて形成し
前記一対の電極間に前記電子共役性高分子半導体層に沿
って絶縁層を介して少なくとも一個の制御電極を設（す
、前記易動性ドーパント保持層のドーパント分布を前記
制御電極によって制御し 前記電子共役性高分子半導体
層の導電率を制御してなる電気制御素子に関するもので
ある。本発明の電気制御素子（よ 積層された易動性ド
ーパント保持層と電子共役性高分子半導体層とのドーパ
ント分布を制御電極によって制御し 電子共役性高分子
半導体層の導電率を制御するものである。しかし 電子
共役性高分子半導体層と易動性ドーパント保持層との間
のドーパントの透過性特性がアナログ的で閾値を持つも
のではなかっ九
本発明はこの電気制御素子に用いる電子共役性高分子半
導体層と易動性ドーパント保持層との改良を目的として
いる。Problems to be Solved by the Invention Dopants have a major drawback in that they can be diffused in a polymer matrix by an electric field and change their conductivity. An application device for this has already been disclosed in Japanese Patent Application No. 1-192961, in which an electronically conjugated polymer semiconductor layer and a mobile dopant holding layer are stacked between a pair of electrodes.
At least one control electrode is provided between the pair of electrodes along the electron conjugated polymer semiconductor layer via an insulating layer, and the dopant distribution in the mobile dopant holding layer is controlled by the control electrode. This invention relates to an electrical control element formed by controlling the conductivity of an electronically conjugated polymeric semiconductor layer. The dopant distribution is controlled by a control electrode to control the conductivity of the electron conjugated polymer semiconductor layer.However, the dopant permeability between the electron conjugated polymer semiconductor layer and the mobile dopant holding layer is The present invention aims at improving the electronically conjugated polymer semiconductor layer and the mobile dopant holding layer used in this electrical control element.
課題を解決するための手段
一対の電極間に電子共役性高分子半導体層と易動性ドー
パント保持層とを重ねて形成し 前記−対の電極間に前
記電子共役性高分子半導体層に沿って絶縁層を介して少
なくとも一個の制御電極を設け、前記電子共役性高分子
半導体層と前記易動性ドーパント保持層中のドーパント
分布を前記制御電極によって制御し 前記電子共役性高
分子半導体層の導電率を制御してなる電気制御素子にお
いて、前記易動性ドーパント保持層を、前記易動性ドー
パントと錯形成した重合体組成物層より構成する。Means for Solving the Problems An electron conjugated polymer semiconductor layer and a mobile dopant holding layer are stacked and formed between a pair of electrodes, and an electron conjugated polymer semiconductor layer is formed along the electron conjugated polymer semiconductor layer between the pair of electrodes. At least one control electrode is provided through an insulating layer, and the dopant distribution in the electron conjugated polymer semiconductor layer and the mobile dopant holding layer is controlled by the control electrode, and the conductivity of the electron conjugated polymer semiconductor layer is controlled by the control electrode. In the electrical control element having a controlled ratio, the mobile dopant retaining layer is constituted by a layer of a polymer composition complexed with the mobile dopant.
また 電子共役性高分子半導体層を、長いπ電子共役主
鎖を持つ高分子中に電子伝導性を付与するドーパントと
前記ドーパントの溶解剤とが分散されてなるドーパント
易動性導電性高分子組成物より構成する。Further, the electronic conjugated polymer semiconductor layer is formed by a dopant-mobility conductive polymer composition in which a dopant that imparts electronic conductivity and a solubilizer for the dopant are dispersed in a polymer having a long π-electron conjugated main chain. Composed of things.
作用
上記構成によれ！よ ドーパントの移動にポテンシャル
バリヤを設はスイッチング特性に非線形性を持たせるこ
とができる。本発明はドーパントの分布を精密にかつ高
速に制御して一対の電極間のスイッチング電流制御特性
を安定化させるものである。According to the above structure! By creating a potential barrier for dopant movement, it is possible to make the switching characteristics nonlinear. The present invention stabilizes the switching current control characteristics between a pair of electrodes by controlling the dopant distribution precisely and at high speed.
一人 上記構成の電子共役性高分子半導体層によれば
長いπ電子共役主鎖を持つ高分子を可塑化して高分子の
分子間力を弱へ ドーパントの易動性を改善することが
できる。According to the electronically conjugated polymer semiconductor layer having the above structure,
By plasticizing polymers with long π-electron conjugated main chains, it is possible to weaken the intermolecular forces of the polymer and improve the mobility of dopants.
実施例
第１図に本発明の電気制御素子の一実施例を説明する断
面概念図を示す。Embodiment FIG. 1 is a cross-sectional conceptual diagram illustrating an embodiment of the electrical control element of the present invention.
一対の電極１、２間に電子共役性高分子半導体層３と易
動性ドーパント保持層４とを重ねて形成し 前記一対の
電極間に前記電子共役性高分子半導体層３に沿って絶縁
層６を介して少なくとも一個の制御電極５を設（す、前
記電子共役性高分子半導体層３と前記易動性ドーパント
保持層４のド−バンド分布を前記制御電極５によって制
御し 前記電子共役性高分子半導体層３の導電率を制御
してなる電気制御素子であも
電子共役性高分子半導体層３の材料として１よポリアセ
チレン、ポリチオフェン、ポリビローノにポリｐ−フェ
ニレンおよびこれらの共重合体 誘導体あるいはその組
成物が用いられる。An electron conjugated polymer semiconductor layer 3 and a mobile dopant holding layer 4 are stacked and formed between the pair of electrodes 1 and 2, and an insulating layer is formed along the electron conjugated polymer semiconductor layer 3 between the pair of electrodes. At least one control electrode 5 is provided via the electron conjugate layer 6, and the dopant distribution of the electronically conjugated polymer semiconductor layer 3 and the mobile dopant holding layer 4 is controlled by the control electrode 5. In the electrical control element formed by controlling the conductivity of the polymer semiconductor layer 3, the materials of the electronically conjugated polymer semiconductor layer 3 include polyacetylene, polythiophene, polyvirono, polyp-phenylene, and copolymers thereof, derivatives thereof, or The composition is used.
この電子共役性高分子は化学重合、または電解重合（陽
極酸化重合、陰極還元重合）によって合成されも
陽極酸化重合（よ 電子共役性モノマーの溶液中にドー
パントを溶解させ、少なくとも一対の電極による電場に
より、前記電子共役性モノマーを陽極上に電解重合する
もので、前記ドーパントが分散されてなる導電性高分子
が得られる。また 長いπ電子共役主鎖を持つ高分子中
に電子伝導性を付与するドーパントと前記ドーパントの
溶解剤とを分散させてなるドーパント易動性導電性高分
子組成物よりなる電子共役性高分子半導体層は上記重合
溶液中にドーパントの溶解剤を一緒に入れることによっ
て形成できる。This electron-conjugated polymer can be synthesized by chemical polymerization or electrolytic polymerization (anodic oxidation polymerization, cathodic reduction polymerization). By electrolytically polymerizing the electronically conjugated monomer on an anode, a conductive polymer in which the dopant is dispersed can be obtained.Additionally, electronic conductivity is imparted to a polymer having a long π-electron conjugated main chain. An electronically conjugated polymer semiconductor layer made of a dopant-mobility conductive polymer composition in which a dopant and a solubilizing agent for the dopant are dispersed is formed by adding a solubilizing agent for the dopant into the polymerization solution. can.
易動性ドーパント保持層４とＣヨ ドーパントが易動
するように構成された層玄 主に電子供与体（金属イオ
ンなど）または電子受容体（ルイス醜プロトン酸などの
アニオン）よりなるドーパントと錯形成する重合体組成
物層よりなるが、イオン包接化合物あるいはポリイオン
錯体の形成能を持つことが特徴であも イオン包接化合
物として（よりラウンエーテＡｔ、 ポリエチレンオ
キシドのようなアルキレンオキシド構造を持つ高分子が
適している。また ポリイオン錯体に用いる重合体とし
て（よ アミノ基含有ポリス ポリウレタン、ポリアミ
ド、ポリアクリル隈 ポリエステルなど極性ポリマーな
どがある。The mobile dopant holding layer 4 and the C2 dopant are complexed with dopants mainly composed of electron donors (such as metal ions) or electron acceptors (anions such as Lewis proton acids). The formed polymer composition layer is characterized by having the ability to form ionic clathrate compounds or polyion complexes. Polymers used in polyion complexes include polar polymers such as amino group-containing polyurethane, polyamide, and polyacrylic polyester.
本発明の電気制御素子は３端子だけでなく、例えば基板
７に５ｉｄｅ絶縁性表面を持つシリコン単結晶を用いて
基板端子をとり４端子素子としても構成できる。この場
合には制御特性がより精度よく、かつ双安定になム
また 本発明はドーパントの易動性に閾値があり、時間
や電流量の関与したスイッチング素子即ち可塑性素子と
しても利用でき、人工頭脳素子に有用である。第２図に
示すような２端子可塑性素子として動作させる構成もで
きる。The electrical control element of the present invention can be configured not only as a three-terminal element but also as a four-terminal element, for example, by using a silicon single crystal having a 5-ide insulating surface as the substrate 7 to provide substrate terminals. In this case, the control characteristics become more precise and bistable. Also, the present invention has a threshold value for the mobility of the dopant, and can be used as a switching element, that is, a plastic element, in which time and current amount are involved. Useful for devices. A configuration in which the device operates as a two-terminal flexible device as shown in FIG. 2 is also possible.
また 本発明の電気制御素子の構成ζよ 電子共役性高
分子半導体層３と易動性ドーパント保持層４との間にド
ーパント透過性分離層を形成してもよ（℃ このドーパ
ント透過性分離層は絶縁層としても働き、制御特性の安
定性が向上する。 ドーパント透過性分離層にはイオン
易透過性の多孔質膜などがもちいられる。Furthermore, according to the configuration ζ of the electrical control element of the present invention, a dopant-permeable separation layer may be formed between the electron-conjugated polymer semiconductor layer 3 and the mobile dopant holding layer 4 (°C). also acts as an insulating layer, improving the stability of control characteristics.A porous membrane that is easily permeable to ions is used as the dopant-permeable separation layer.
本発明の素子（よ 制御電極上に外的作用因子によって
電位を誘起する機能層を設ければセンサとしても構成で
きる。The device of the present invention can also be configured as a sensor by providing a functional layer that induces a potential by an external agent on the control electrode.
本発明のこれらの電気制御素子は複数個用いると半導体
集積回路プロセスと同様の手法によって集積回路素子を
構成できる。When a plurality of these electrical control elements of the present invention are used, an integrated circuit element can be constructed by a method similar to a semiconductor integrated circuit process.
また この電気制御素子は双安定素子であるた八 記憶
素子としても利用でき、記憶装置を構成できる。In addition to being a bistable element, this electrical control element can also be used as a memory element to form a memory device.
次に実施例を用いて本発明を説明すも
実施例１
基板７上に第１図のように５μｍの易動性ドーパント保
持層４と１０μｍ厚のポリピロール層よりなる電子共役
性高分子半導体層３とを重ねて形成しその上に一対の電
極ｌ、２を設けその間に制御電極５を設は九 易動性ド
ーパント保持層４には４一ビニルピリジン一酢酸ビニル
共重合体の過塩素酸塩を用いた こうして得た電気制御
素子を動作させたとこへ 第３図ａのような非線形スイ
ッチング特性を示した
実施例２
基板７上に第１図のように５μｍの易動性ドーパント保
持層４と１０μの厚のポリピロール層よりなる電子共役
性高分子半導体層３とを重ねて形成しその上に一対の電
極１、２と絶縁層６とを設けその絶縁層の上に制御電極
５を設は電気制御素子とじ九 易動性ドーパント保持層
４には４−ビニルピリジン−酢酸ビニル共重合体の過塩
素酸塩を用い九 こうして得た電気制御素子を動作させ
たとこへ 第３図ａのような非線形スイッチング特性お
よび、第３図すに示すようなソースドレイン電流の時間
特性が得られｔ島
発明の効果
本発明は 一対の電極間に電子共役性高分子半導体層と
易動性ドーパント保持層と制御電極とを有する電気制御
素子の電子共役性高分子半導体層と易動性ドーパント保
持層の改良に関するもので、導電性高分子物性の特徴を
大いに生かした電気デバイスを提供するものである。Next, the present invention will be explained using examples. Example 1 An electronically conjugated polymer semiconductor layer consisting of a 5 μm thick mobile dopant holding layer 4 and a 10 μm thick polypyrrole layer is formed on a substrate 7 as shown in FIG. A pair of electrodes 1 and 2 are placed on top of the layer 3, and a control electrode 5 is provided between them. Example 2, in which the electrical control element thus obtained using salt was operated showed the nonlinear switching characteristics as shown in FIG. 4 and an electronically conjugated polymer semiconductor layer 3 made of a polypyrrole layer with a thickness of 10 μm are stacked on top of each other, a pair of electrodes 1 and 2 and an insulating layer 6 are provided thereon, and a control electrode 5 is formed on the insulating layer. The electrical control element was set up using a perchlorate of 4-vinylpyridine-vinyl acetate copolymer as the mobile dopant holding layer 4.The electrical control element thus obtained was operated. The nonlinear switching characteristics as shown in FIG. 3 and the temporal characteristics of the source-drain current as shown in FIG. 3 are obtained. This invention relates to the improvement of an electronically conjugated polymer semiconductor layer and a mobile dopant retention layer of an electrical control element having a retention layer and a control electrode, and provides an electrical device that takes full advantage of the physical properties of conductive polymers. be.
本発明の素子は数多くの導電性高分子に共通する電界に
よるドーパントの易動性を利用したものでデバイスとし
て大きな価値を有するものである。The element of the present invention utilizes the mobility of dopants due to electric fields, which is common to many conductive polymers, and has great value as a device.
本発明の電気制御素子は複数個用いると半導体集積回路
プロセスと同様の手法によって集積回路素子にも構成で
き、またこの電気制御素子は双安定素子であるたべ 記
憶素子としても利用できるものである。また ドーパン
トの時間的易動性によって時間や電流量の関与したスイ
ッチングをする可塑性素子としても利用でき、人工頭脳
素子の一つともなるものである。When a plurality of electrical control elements of the present invention are used, they can be constructed into an integrated circuit element using a method similar to a semiconductor integrated circuit process, and this electrical control element can also be used as a bistable memory element. Furthermore, due to the temporal mobility of the dopant, it can also be used as a plastic element that performs switching that involves time and current, and can also be used as an artificial brain element.
第１図および第２図は それぞれ本発明の実施例におけ
る電気制御素子の構成を示す断面概念医第３図ａは本発
明の実施例における電気制御素子のスイッチング特性を
示す諷 第３図すは本発明の実施例２におけるソースド
レイン電流の時間特性を示す図である。
１、２・・・一対の電極 ３・・・電子共役性高分子半
導体層 ４・・・易動性ドーパント保持層 ５・・・制
御電極 ６・・・絶縁恩 ７・・基板よりなる制御電極1 and 2 are cross-sectional conceptual diagrams showing the configuration of the electrical control element in the embodiment of the present invention, respectively. FIG. 7 is a diagram showing the time characteristics of source-drain current in Example 2 of the present invention. 1, 2... Pair of electrodes 3... Electron-conjugated polymer semiconductor layer 4... Mobile dopant holding layer 5... Control electrode 6... Insulating layer 7... Control electrode made of substrate
Claims (6)
性ドーパント保持層とを重ねて形成し、前記一対の電極
間に前記電子共役性高分子半導体層に沿って絶縁層を介
して少なくとも一個の制御電極を設け、前記電子共役性
高分子半導体層と前記易動性ドーパント保持層中のドー
パント分布を前記制御電極によって制御し、前記電子共
役性高分子半導体層の導電率を制御してなる電気制御素
子において、前記易動性ドーパント保持層が、前記易動
性ドーパントと錯形成した重合体組成物層よりなること
を特徴とする電気制御素子。(1) An electron-conjugated polymer semiconductor layer and a mobile dopant holding layer are stacked and formed between a pair of electrodes, and an insulating layer is interposed between the pair of electrodes along the electron-conjugated polymer semiconductor layer. at least one control electrode is provided, the dopant distribution in the electron conjugated polymer semiconductor layer and the mobile dopant holding layer is controlled by the control electrode, and the conductivity of the electron conjugated polymer semiconductor layer is controlled. An electrical control element comprising: the mobile dopant holding layer comprising a polymer composition layer complexed with the mobile dopant.
接化合物あるいはポリイオン錯体を形成してなることを
特徴とする請求項１に記載の電気制御素子。(2) The electrical control element according to claim 1, wherein the polymer composition layer forms an ionic clathrate compound or a polyion complex with a mobile dopant.
ポリエチレンオキシド構造を持つ請求項２に記載の電気
制御素子。(3) The electrical control element according to claim 2, wherein the ionic clathrate compound has a crown ether or polyethylene oxide structure.
性ドーパント保持層とを重ねて形成し、前記一対の電極
間に前記電子共役性高分子半導体層に沿って絶縁層を介
して少なくとも一個の制御電極を投書け、前記電子共役
性高分子半導体層と前記易動性ドーパント保持層中のド
ーパント分布を前記制御電極によって制御し、前記電子
共役性高分子半導体層の導電率を制御してなる電気制御
素子において、前記電子共役性高分子半導体層が、長い
π電子共役主鎖を持つ高分子中に電子伝導性を付与する
ドーパントと前記ドーパントの溶解剤とが分散されてな
るドーパント易動性導電性高分子組成物よりなることを
特徴とする電気制御素子。(4) An electron conjugated polymer semiconductor layer and a mobile dopant holding layer are stacked and formed between a pair of electrodes, and an insulating layer is interposed between the pair of electrodes along the electron conjugated polymer semiconductor layer. at least one control electrode is applied to the electron conjugated polymer semiconductor layer, the dopant distribution in the electron conjugated polymer semiconductor layer and the mobile dopant holding layer is controlled by the control electrode, and the conductivity of the electron conjugated polymer semiconductor layer is controlled by the control electrode. In the electrical control element, the electronically conjugated polymer semiconductor layer is formed by dispersing a dopant that imparts electronic conductivity and a dissolving agent for the dopant in a polymer having a long π-electron conjugated main chain. An electrical control element comprising a dopant-mobile conductive polymer composition.
持層との間にドーパント透過性分離層が形成されてなる
請求項１または４に記載の電気制御素子。(5) The electrical control element according to claim 1 or 4, wherein a dopant-permeable separation layer is formed between the electron-conjugated polymer semiconductor layer and the mobile dopant holding layer.
ポリチオフェン、ポリピロール、ポリｐ−フェニレンお
よびこれらの共重合体、誘導体より選ばれた少なくとも
１種を含んでなる請求項１または４に記載の電気制御素
子。(6) The electronically conjugated polymer semiconductor layer is polyacetylene,
5. The electrical control element according to claim 1, comprising at least one selected from polythiophene, polypyrrole, polyp-phenylene, and copolymers and derivatives thereof.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018310A JPH03222476A (en) | 1990-01-29 | 1990-01-29 | Electric control cell |
| EP90114130A EP0418504B1 (en) | 1989-07-25 | 1990-07-24 | Organic semiconductor memory device having a MISFET structure and its control method |
| DE69018348T DE69018348T2 (en) | 1989-07-25 | 1990-07-24 | Organic semiconductor memory device with a MISFET structure and its control method. |
| US07/836,556 US5153681A (en) | 1989-07-25 | 1992-02-18 | Electrcally plastic device and its control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018310A JPH03222476A (en) | 1990-01-29 | 1990-01-29 | Electric control cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03222476A true JPH03222476A (en) | 1991-10-01 |
Family
ID=11968042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018310A Pending JPH03222476A (en) | 1989-07-25 | 1990-01-29 | Electric control cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03222476A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03238873A (en) * | 1990-02-15 | 1991-10-24 | Matsushita Electric Ind Co Ltd | Electro-plastic element and its controlling method |
| JP2005533371A (en) * | 2002-07-01 | 2005-11-04 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー． | Transistor and sensor made of molecular material with electric dipole |
| CN102172620A (en) * | 2011-02-09 | 2011-09-07 | 清华大学深圳研究生院 | Method and system for rolling difficult-to-machine metal material by combining electro-plasticity with temperature plasticity |
-
1990
- 1990-01-29 JP JP2018310A patent/JPH03222476A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03238873A (en) * | 1990-02-15 | 1991-10-24 | Matsushita Electric Ind Co Ltd | Electro-plastic element and its controlling method |
| JP2005533371A (en) * | 2002-07-01 | 2005-11-04 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー． | Transistor and sensor made of molecular material with electric dipole |
| CN102172620A (en) * | 2011-02-09 | 2011-09-07 | 清华大学深圳研究生院 | Method and system for rolling difficult-to-machine metal material by combining electro-plasticity with temperature plasticity |
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