JPH03221279A - Marking mask and tea-co2 laser marking device provided with this mask - Google Patents
Marking mask and tea-co2 laser marking device provided with this maskInfo
- Publication number
- JPH03221279A JPH03221279A JP2013720A JP1372090A JPH03221279A JP H03221279 A JPH03221279 A JP H03221279A JP 2013720 A JP2013720 A JP 2013720A JP 1372090 A JP1372090 A JP 1372090A JP H03221279 A JPH03221279 A JP H03221279A
- Authority
- JP
- Japan
- Prior art keywords
- marking
- mask
- laser
- substrate
- tea
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010330 laser marking Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000002834 transmittance Methods 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010931 gold Substances 0.000 abstract description 6
- 229910052737 gold Inorganic materials 0.000 abstract description 6
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 abstract 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000005499 meniscus Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000004939 coking Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M potassium chloride Inorganic materials [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/44—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using single radiation source per colour, e.g. lighting beams or shutter arrangements
- B41J2/442—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using single radiation source per colour, e.g. lighting beams or shutter arrangements using lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/465—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using masks, e.g. light-switching masks
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Laser Beam Printer (AREA)
- Laser Beam Processing (AREA)
- Dot-Matrix Printers And Others (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＴＥＡ−ＣＯ，レーザを照射してマーキング
を行うＴＥＡ−Ｃｏ、レーザマーキング装置及びこの装
置に使用されるマーキング用マスクに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a TEA-CO, a TEA-Co that performs marking by laser irradiation, a laser marking device, and a marking mask used in this device.
近年、レーザによるマーキングは、従来のインクによる
捺印や機械による刻印などの方法に代わって盛んに注目
されている。マーキングミスが少なく、処理が高速に行
える上、運転コストが安いためである。In recent years, laser marking has been attracting a lot of attention as an alternative to conventional methods such as ink marking and mechanical marking. This is because there are fewer marking errors, processing can be done at high speed, and operating costs are low.
現在開発されているレーザマーキング装置は、ＴＥＡ
Ｃｏｗ レーザまたはＹＡＧレーザを用いたものが主
なものである。このうち、発振波長との関係から、各々
のレーザでマーキングできる材料が限定される。即ち、
例えばＹＡＧレーザはガラスには透過率が高いためマー
キングできず、ＴＥＡ−Ｃｏｔ レーザは、金属には反
射率が高いためマーキングできない。The laser marking equipment currently being developed is TEA
The main ones use a Cow laser or a YAG laser. Among these, the materials that can be marked with each laser are limited due to the relationship with the oscillation wavelength. That is,
For example, a YAG laser cannot mark glass because it has a high transmittance, and a TEA-Cot laser cannot mark a metal because it has a high reflectance.
ＴＥＡ−ＣＯ，レーザマーキング装置は、ＹＡＧレーザ
ではマーキングできないガラス等のマーキングができる
ことや、発振装置が比較的安価であることなどから、そ
の応用が広がっている。TEA-CO and laser marking devices are being widely used because they can mark glass and other materials that cannot be marked with YAG lasers, and because their oscillation devices are relatively inexpensive.
マーキングをｊテうためは、発振されたレーザを所定の
パターンに成形して照射する必要があり、このため、マ
ーキング用マスクが使用される。In order to make a marking, it is necessary to shape the oscillated laser into a predetermined pattern and irradiate it, and for this purpose, a marking mask is used.
第３図は、ＴＥＡ−Ｃｏ、レーザマーキング装置に使用
される従来のマーキング用マスクの説明図である。従来
のマーキング用マスクは、銅やステンレス等の金属板２
１に、所望のパターンの穴２２を設けたものである。FIG. 3 is an explanatory diagram of a conventional marking mask used in TEA-Co and laser marking devices. Conventional marking masks are made of metal plates such as copper or stainless steel.
1 is provided with holes 22 in a desired pattern.
〔発明が解決しようとする技術的課題〕従来のＴＥＡ−
Ｃｏ、レーザマーキングに使用されるマスクは、打ち抜
き式のものであるため、例えば「Ａｊの文字のパターン
とするときは、第３図に示すように、ブリッジ２３が必
要となる。[Technical problem to be solved by the invention] Conventional TEA-
Since the mask used for Co and laser marking is a punch-type mask, for example, when forming a pattern of letters "Aj", a bridge 23 is required as shown in FIG. 3.
従って、このままでは、マーキングされるパターンも正
しいｒ Ａ Ｊの文字でなく、ブリッヂ２３の部分が転
写されたものとなってしまう。Therefore, if left as is, the pattern to be marked will not be the correct letters r A J, but will instead be a portion of the bridge 23 that has been transferred.
そこで、従来より、このブリッヂを打ち消してマーキン
グする方法が幾つか考えられている０例えば、パルス状
のレーザを２シッント打ち、２シヨントめは結像レンズ
等を移動させて二つの像をずらして重ねたり（特開昭６
３−１）１０５８号公報）、結像レンズによるレーザの
儂をぼやかしたり（特開昭６３−１）８２７８号公報）
する方法であるる。Therefore, conventionally, several methods have been considered to cancel this bridge and mark. For example, a pulsed laser is fired for two shots, and for the second shot, an imaging lens is moved to shift the two images. Layering (Unexamined Japanese Patent Publication No. 6)
3-1) Publication No. 1058), blurring the image of the laser using an imaging lens (Japanese Patent Application Laid-Open No. 63-1) No. 8278)
This is the way to do it.
しかしながら、結像レンズ等を移動させて二つの像をず
らして重ねる方法は、複雑な機構、動作を必要とし、マ
ーキング装置のコストが高くなる他、２ショット以上打
つ動作が必要なため、処理時間が長くなるという問題が
あり、また結像レンズによるレーザの像をぼやかす方法
は、当然のことながら、鮮明なマーキングという点では
満足できるものではない。However, the method of shifting and overlapping two images by moving an imaging lens, etc. requires complicated mechanisms and operations, which increases the cost of the marking device, and requires more than two shots, which takes processing time. There is a problem that the laser image becomes long, and the method of blurring the laser image using an imaging lens is, of course, not satisfactory in terms of clear marking.
本発明は、かかる課題を解決するためになされたもので
あり、処理時間が長くならず、安価でかつ鮮明なブリッ
ヂレスのマーキングを行うことを目的とする。The present invention was made in order to solve such problems, and an object of the present invention is to perform inexpensive and clear bridgeless marking without prolonging the processing time.
上記目的を達成するため、本発明のマーキング用マスク
は、１０．６μｍ付近の光の透過率が高い基板と、該基
板の表面を加工してマーキングしようとするパターンの
形状に形威された、１０００μｍ付近の光の透過率の低
いマスク部とからなることを特徴とし、本発明のＴＥＡ
−Ｃｏ、レーザマーキング装置は、ＴＥＡ−−Ｃｏ、レ
ーザ発振装置と、特許請求の範囲第（１）項記載のマー
キング用マスクと、該マーキング用マスクを透過したレ
ーザを結像させる結像レンズとを具備したことを特徴と
する。In order to achieve the above object, the marking mask of the present invention includes a substrate having a high transmittance of light in the vicinity of 10.6 μm, and a pattern formed by processing the surface of the substrate to form a marking. The TEA of the present invention is characterized by comprising a mask portion with low light transmittance in the vicinity of 1000 μm.
-Co, a laser marking device includes a TEA--Co, a laser oscillation device, a marking mask according to claim (1), and an imaging lens that forms an image of the laser transmitted through the marking mask. It is characterized by having the following.
（作用〕
上記構成にかかる本発明のマーキング用マスク及びＴＥ
Ａ−Ｃｏ、レーザマーキング装置は、基板を透過した光
によってマーキングがされる。(Function) The marking mask and TE of the present invention having the above structure
The A-Co laser marking device performs marking using light transmitted through the substrate.
（実施例） 以下本発明の詳細な説明する。(Example) The present invention will be explained in detail below.
第１図は本実施例のマーキング用マスクを説明するため
の斜視図である。第１図において、１）は１０．６μｍ
付近の光の透過率が高い基板、１２は１０．６μｍ付近
の光の透過率の低いマスク部を示す、１０．６μｍ付近
の光の透過率が高い基板１）には、本実施例では、シリ
コンが使用されている・ １０．６μｍ付近の光の透過
率の低し１マスク部１２には、金が用いられている。第
１図に示すマーキング用マスクは、シリコンからなる基
板１２に金を蒸着し、その上にレジスト塗布して、露光
、現像、エツチングを行い、蒸着された金を所定のパタ
ーンに成形して、マスク部１２とすることにより作成さ
れる。シリコンからなる基板１４の表面は、無反射コー
ティングが施されており、１０．６μｍ付近の光の透過
率が高く、充分実用に耐えうる。他の実施例としては、
Ｇｅ。FIG. 1 is a perspective view for explaining the marking mask of this embodiment. In Figure 1, 1) is 10.6 μm
In this example, the substrate 1) has a high transmittance for light in the vicinity of 10.6 μm, and 12 indicates a mask portion that has a low transmittance for light in the vicinity of 10.6 μm. Gold is used for the mask portion 12, which has a low transmittance for light around 10.6 μm. The marking mask shown in FIG. 1 is made by depositing gold on a silicon substrate 12, applying a resist thereon, exposing it to light, developing it, etching it, and shaping the deposited gold into a predetermined pattern. It is created by forming the mask portion 12. The surface of the substrate 14 made of silicon is coated with an anti-reflection coating, has a high transmittance for light around 10.6 μm, and is suitable for practical use. Other examples include:
Ge.
Ｚｎ５ｅ、ＣｄＴｌ、ＧａＡｓ、ＮａＣ１，ＫＣｌ等が
１０，６μｍの光の透過率が高く、基板１）として使用
可能である。Zn5e, CdTl, GaAs, NaCl, KCl, etc. have high transmittance for light of 10.6 μm and can be used as the substrate 1).
一方、周知のように銅、鉄などを始めとしたほとんど金
属は、１０．６μｍ付近の光の透過率が低く、上記実施
例の金の他、各種の金属がマスク部１２として使用可能
である。また、マスク部１２は、上記の１０．６μｍ付
近の光の透過率が低い物質を被着させて設ける場合の他
、基Ｉｌｌの表面をサンドブラスト法により、マーキン
グしようとするパターンの形状のスリガラス部分を形威
することによっても構成可能である。On the other hand, as is well known, most metals including copper and iron have low transmittance for light around 10.6 μm, and various metals can be used as the mask portion 12 in addition to gold in the above embodiment. . In addition to the case where the mask part 12 is provided by depositing a substance with a low transmittance of light in the vicinity of 10.6 μm, the mask part 12 can also be formed by sandblasting the surface of the base Ill to form a ground glass part in the shape of a pattern to be marked. It can also be constructed by imposing the following.
第２図は、第１図のマーキング用マスクを使用したＴＥ
Ａ−Ｃｏ、レーザマーキング装置の実施例の概略説明図
である。２はＴＥＡ−Ｃｏ、レーザ発振装置、３は折り
返しミラー、４はシリンドリカルレンズ、ｌはマーキン
グ用マスク、５は結像レンズとしてのメニスカスレンズ
、６は搬送系、７はマーキングされるワークを示す。Figure 2 shows TE using the marking mask shown in Figure 1.
A-Co is a schematic explanatory diagram of an embodiment of a laser marking device. 2 is a TEA-Co, a laser oscillation device, 3 is a folding mirror, 4 is a cylindrical lens, l is a marking mask, 5 is a meniscus lens as an imaging lens, 6 is a conveyance system, and 7 is a workpiece to be marked.
第２図において、ＴＥＡ−Ｃｏｔレーザ発振装置２から
出射されたパルス状のレーザは、シリンドリカルレンズ
３により特定方向に集光され、マーキング用マスクｌを
照射する。マーキング用マスクｌを透過したレーザは、
所望のパターンの光となり、メニスカスレンズ５で縮小
されて、ワーク７に照射される。レーザが照射されたワ
ーク７は、表面の材料の蒸発や変色により、マーキング
がされることになる。In FIG. 2, a pulsed laser emitted from a TEA-Cot laser oscillation device 2 is focused in a specific direction by a cylindrical lens 3, and irradiates a marking mask l. The laser transmitted through the marking mask l is
The light has a desired pattern, is reduced by the meniscus lens 5, and is irradiated onto the workpiece 7. The workpiece 7 irradiated with the laser will be marked by evaporation or discoloration of the material on the surface.
第２図のマーキング用マスク１は、第１図に示すように
ブリッヂが形成されていないので、第２図のワーク７に
マーキングされるパターンには、ブリッヂが転写される
ことはない。Since the marking mask 1 shown in FIG. 2 does not have a bridge formed thereon as shown in FIG. 1, no bridge is transferred to the pattern to be marked on the workpiece 7 shown in FIG.
第２図に示すＴＥＡ−Ｃｏ、レーザ発振装置の実施例に
おいて、ロフト番号等のマーキングの場合は、マーキン
グ用マスク１を円板状にするとともに回転軸を設け、搬
送系６の搬送信号に同期してマーキング用マスクｌを回
転させて駆動するようにしても良い。In the embodiment of the TEA-Co laser oscillator shown in FIG. 2, in the case of marking such as a loft number, the marking mask 1 is made into a disk shape and a rotating shaft is provided, synchronized with the carrier signal of the carrier system 6. Alternatively, the marking mask l may be rotated and driven.
以上説明した通り、本発明によれば、２シッット打って
像をずらして重ねたり、像をぼやかしたりしてブリッヂ
を消す必要がなくなるので、処理時間が長くならず、安
価でかつ鮮明なブリッヂレスのマーキングを行うことが
できる。As explained above, according to the present invention, it is no longer necessary to erase the bridge by shifting and overlapping the images or blurring the images by hitting two shots, so the processing time is not long, and the bridgeless image is inexpensive and clear. can be marked.
第１図は本実施例のマーキング用マスクを説明するため
の斜視図である。第２図は第１図のマーキング用マスク
を使用したＴＥＡ−Ｃｏ、レーザマーキング装置の実施
例の概略説明図である。第３図Ｇ；！ＴＥＡ−Ｃｏ、レ
ーザマーキング装置に使用される従来のマーキング用マ
スクの説明図であ図中、
１ ２ −−−−・
１０．６μｍ付近の光の透過率の
高い基板
１０．６μｍ付近の光の透過率の
低いマスク部
ＴＥＡ−Ｃｏ、レーザ発振装置
折り返しミラー
シリンドリカルレンズ
マーキング用マスク
結像レンズとしてのメニスカスレ
ンズ
搬送系
マーキングされるワーク
を示す。
９
矛
１つ
茎
１！ｌ１
Ｘ３＠FIG. 1 is a perspective view for explaining the marking mask of this embodiment. FIG. 2 is a schematic explanatory diagram of an embodiment of a TEA-Co laser marking device using the marking mask shown in FIG. 1. Figure 3 G;! TEA-Co is an explanatory diagram of a conventional marking mask used in a laser marking device. A mask portion TEA-Co with low transmittance, a laser oscillator folded mirror cylindrical lens, a mask for marking, a meniscus lens transport system as an imaging lens, and a work to be marked are shown. 9 One spear, one stalk! l1 X3@
Claims (2)
基板の表面を加工してマーキングしようとするパターン
の形状に形成された、１０．６μｍ付近の光の透過率の
低いマスク部とからなることを特徴とするマーキング用
マスク。(1) A substrate with high transmittance of light around 10.6 μm and a mask portion with low transmittance of light around 10.6 μm formed in the shape of a pattern to be marked by processing the surface of the substrate. A marking mask characterized by comprising:
範囲第（１）項記載のマーキング用マスクと、該マーキ
ング用マスクを透過したレーザを結像させる結像レンズ
とを具備したことを特徴とするＴＥＡ−ＣＯ＿２レーザ
マーキング装置。(2) A TEA-CO_2 laser oscillation device, a marking mask according to claim (1), and an imaging lens that forms an image of the laser beam transmitted through the marking mask. TEA-CO_2 laser marking device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013720A JPH03221279A (en) | 1990-01-25 | 1990-01-25 | Marking mask and tea-co2 laser marking device provided with this mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013720A JPH03221279A (en) | 1990-01-25 | 1990-01-25 | Marking mask and tea-co2 laser marking device provided with this mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03221279A true JPH03221279A (en) | 1991-09-30 |
Family
ID=11841082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013720A Pending JPH03221279A (en) | 1990-01-25 | 1990-01-25 | Marking mask and tea-co2 laser marking device provided with this mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03221279A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5378137A (en) * | 1993-05-10 | 1995-01-03 | Hewlett-Packard Company | Mask design for forming tapered inkjet nozzles |
-
1990
- 1990-01-25 JP JP2013720A patent/JPH03221279A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5378137A (en) * | 1993-05-10 | 1995-01-03 | Hewlett-Packard Company | Mask design for forming tapered inkjet nozzles |
| US5417897A (en) * | 1993-05-10 | 1995-05-23 | Hewlett-Packard Company | Method for forming tapered inkjet nozzles |
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