JPH03218656A - Semiconductor device heat dissipating member - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a novel structure of a heat radiating member used in a semiconductor device.

[Prior Art] Semiconductor elements with a high degree of integration and operating at high speed generate a large amount of heat, so they have conventionally been housed in a ceramic package with heat dissipation fins. FIG. 2 is a sectional view conceptually showing an example of such a package. In FIG. 2, an external lead 1 is attached to a Cu-Mo-
The heat sink plate 3 made of Cu clad material is made of Ag wax (
A Mo compensating plate 4 is bonded to the lower part of the heat sink plate 3 using Au solder, and a semiconductor element 5 is further bonded to the MO compensating plate 4 using a similar Au solder. The electrode and the lead end of the ceramic substrate 2 are connected with a gold wire 6, and a hermetic seal cover 7 is joined to the lower opening of the ceramic substrate 1 with an Au solder (not shown) to seal the inside. A radiation fin 9 made of Al2024 alloy whose surface has been subjected to alumite treatment is bonded to the upper part of the heat sink plate 3 with an adhesive layer 8 having relatively good thermal conductivity.

[Problems to be Solved by the Invention] However, in the above package, the adhesive layer 8 does not have sufficient thermal conductivity, and in order to respond to higher integration and higher speed of semiconductor devices, it is necessary to improve the heat dissipation properties of the package. Further improvements were needed.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a heat dissipating member for a semiconductor device that has extremely excellent heat dissipation properties.

[Means for Solving the Problems] In order to achieve the above object, the heat dissipation member of the present invention has a heat dissipation coefficient A having a coefficient of thermal expansion α=23 to 29×10-6/°C.
L alloy fins and Al with α=10~18x10-6/℃
One main surface of the alloy heat sink plate is α=20~2
It is bonded with an Al alloy brazing material of 3xlO-6/°C, and is characterized in that all surfaces except the other main surfaces of the heat sink plate are anodized.

FIG. 1 is a sectional view conceptually showing a package using the heat dissipation member of the present invention. In Fig. 1, a fin 9 made of Al2024 alloy (α = 23.6 x l O-6/°C) and an Al
-40%Si alloy (a = l5x 10-6/℃
) heat sink plate 10 made of Al-11.7%Si alloy (melting point 577°C, α=23xlO-6/°C) brazing filler metal 1
1, and all surfaces except the main surface of the heat sink plate to which the Mo compensator plate 4 is to be bonded are anodized. The alumite treatment is performed to electrically insulate the exposed portion of the package including the heat dissipation fins 9.

[Function] Such a heat dissipating member is made of alumina (a=6.5~7xlO
-6/℃) can be directly bonded to the multilayer ceramic substrate 2,
Since the difference in thermal expansion coefficients is extremely small, distortion is hardly a problem. Moreover, since they are all made of aluminum alloy with good thermal conductivity, heat dissipation from the semiconductor element 5 is extremely well performed. Furthermore, since the heat dissipation member of the present invention is pre-assembled from three parts, assembly of the semiconductor device can be greatly simplified, resulting in a significant cost reduction effect. Yet another advantage of the present invention is that after the semiconductor device is assembled, all metal parts that protrude upward are covered with insulating alumite. In the conventional package structure shown in FIG. 2, a part of the heat sink plate 3 exposes the metal base, but compared to this, it can be said that the increased insulation area increases safety.

[Effects of the Invention] By using the heat dissipating member of the present invention, it is possible to manufacture a semiconductor device with extremely excellent heat dissipation properties, and it is possible to sufficiently respond to higher integration and higher speed of semiconductor devices.

[Brief explanation of drawings]

FIG. 1 is a conceptual cross-sectional view of a semiconductor device package using the heat dissipating member of the present invention, and FIG. 2 is a conceptual cross-sectional view of a conventional package. 3... Conventional heat sink plate, 8... Adhesive layer, 9
...Al alloy heat radiation fin, 10...Al alloy heat sink plate, 1l...Al alloy brazing material.

Claims (2)

[Claims] (1) Al alloy fins for heat dissipation with a thermal expansion coefficient of 23 to 29 x 10^-^6/℃ and a thermal expansion coefficient of 10 to 18 x 1
．． One main surface of an Al alloy heat sink plate with a temperature of 0^-^6/℃ is joined with an Al alloy brazing material with a thermal expansion coefficient of 20 to 23 x 10^-^6/℃, and the other main surface of the heat sink plate is A heat dissipation member for semiconductor devices that is anodized on all surfaces except for the surfaces. (2) The Al alloy brazing material has a Si content of 10.7 to 12.7
The heat dissipation member for a semiconductor device according to claim 1, which is an Al-Si alloy brazing filler metal containing % by weight.