JPH0321860U - - Google Patents

Info

Publication number

JPH0321860U

JPH0321860U JP8184589U JP8184589U JPH0321860U JP H0321860 U JPH0321860 U JP H0321860U JP 8184589 U JP8184589 U JP 8184589U JP 8184589 U JP8184589 U JP 8184589U JP H0321860 U JPH0321860 U JP H0321860U

Authority

JP

Japan

Prior art keywords

wiring

semiconductor device

silicon substrate

contact hole

electrode structure

Prior art date

1989-07-11

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
• 239000004065 semiconductor Substances 0.000 claims description 4
• 229910052710 silicon Inorganic materials 0.000 claims description 4
• 239000010703 silicon Substances 0.000 claims description 4
• 239000000758 substrate Substances 0.000 claims description 4
• 238000010586 diagram Methods 0.000 description 2
• 230000008021 deposition Effects 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 238000000034 method Methods 0.000 description 1
• 229920002120 photoresistant polymer Polymers 0.000 description 1