JPH03217068A - Semiconductor laser element and manufacture thereof - Google Patents

Abstract

PURPOSE:To enable two types of laser light whose deflection direction differs mutually to be applied and obtain a laser element suitable for light source for an optic-related equipment such as a light source for measuring light by providing lamination structures with an active region on the upper surface and side surface of a stripe-shaped ridge structure which is formed on a semiconductor substrate and by providing a buried layer covering them. CONSTITUTION:The title item has a semiconductor substrate 1, a stripe-shaped ridge structure 11 which is formed on the semiconductor substrate 1, a first lamination structure 10a which is provided on the upper surface of the ridge structure 11 and has an active region 4, a second lamination structure 10b which is provided on one side surface of the ridge structure 11 and has an active region, a third lamination structure 10c which is provided on the other side surface of the ridge structure 11 and has an active region, a buried layer 6 covering the first to third lamination structures 10a-10c, a first electrode 8a which is formed on the buried layer 6 and is electrically connected to the second lamination structure 10b, a second electrode 8b which is formed on the buried layer 6 and is electrically connected to the third lamination structure 10c, and a third electrode 8c which is formed on the buried layer 6 and is electrically connected to the third lamination structure 10c.

Description

Detailed Description of the Invention (Industrial Field of Application) The present invention relates to a semiconductor laser device suitable for a light source for optical-related equipment such as an optical measurement device and a method for manufacturing the same, and particularly relates to a semiconductor laser device suitable for a light source for optical-related equipment such as an optical measurement device, and a method for manufacturing the same. The present invention relates to a semiconductor laser device that can emit light and a method for manufacturing the same.

(Prior Art) Semiconductor laser elements are being actively researched as coherent light sources used in optical-related equipment such as optical measurement devices.

FIG. 7 shows a cross-sectional view of a conventional semiconductor laser device. This semiconductor laser element has a buried double heterostructure.

As can be seen from FIG. 7, on the n-type GaAs substrate 71,
n-type AIGaAs cladding layer 72, non-doped AIGa
A double heterostructure mesa stripe structure is provided in which an As active layer 73 and a p-type AIGaAS cladding layer 74 are laminated in this order from the substrate 7l side. A buried layer 75 made of an n-type AI GaAs layer is provided on the substrate 71 in a region other than the region where the mesa stripe structure is provided. The buried layer 75 covers the side surfaces of the mesa stripe structure. A dielectric film 76 made of Sj02 is formed on the buried layer 75. A p-side electrode 77 is formed on the p-type cladding layer 74 and the buried layer 76, and an n-side electrode 78 is formed on the back surface of the substrate 71.

In the semiconductor laser device shown in FIG. 7, a side surface of a mesa stripe structure including an active layer 73 is buried with a buried layer 75. For this reason, the laser light can be oscillated in a single fundamental horizontal transverse mode.

Further, the voltage for oscillating the laser beam is applied to the electrodes 77, 7.
8, the drive current concentrates and efficiently flows through the mesa stripe structure due to the dielectric film 76 on the buried layer 75. This lowers the oscillation threshold and realizes stable laser oscillation at low current. However, in order to realize single transverse mode oscillation and lower the oscillation threshold (1th), it is necessary to set the width of the active layer 73 to a size of about several μm.

(Problems to be Solved by the Invention) However, the above-mentioned conventional technology has the following problems.

In various optical devices that utilize coherent light, the polarization direction of coherent light has an important meaning. in general,
Laser light emitted from the semiconductor laser element is polarized into TE waves, and the polarization direction is parallel to the active layer. Therefore, in order to obtain two types of laser beams with different polarization directions, -5- two semiconductor laser elements are required. For example, when two semiconductor laser devices are arranged in parallel, the polarization direction of the laser light emitted by one semiconductor laser device is divided by half compared to the polarization direction of the laser light emitted by the other semiconductor laser device. By rotating using a single-wavelength plate or the like, two types of laser beams with mutually different polarization directions are obtained. However, such conventional technology requires two semiconductor laser elements and optical components such as a half-wave plate.
There is a problem in that the number of parts is large and it is not suitable for downsizing the device.

The present invention has been made to solve the above problems, and its purpose is to be able to emit two types of laser beams with different polarization directions, and to provide optical-related equipment such as a light source for optical measurement. An object of the present invention is to provide a semiconductor laser device suitable for use as a light source and a method for manufacturing the same.

(Means for Solving the Problems) A semiconductor laser device of the present invention includes a semiconductor substrate, a striped ridge structure formed on the semiconductor substrate, and a striped ridge structure provided on the upper surface of the ridge structure. A first laminated structure having an active region, a second laminated structure having an active region provided on one side of the ridge structure, and an active region provided on the other side of the ridge structure. a third laminated structure, a buried layer covering the first, second and third laminated structures, and a first layer formed on the buried layer and electrically connected to the first laminated structure. a second electrode formed on the buried layer and electrically connected to the second laminated structure.
and a third electrode formed on the buried layer and electrically connected to the third laminated structure, thereby achieving the above object.

Further, a semiconductor substrate, a terrace structure formed on the semiconductor substrate, a first stacked structure having an active region provided on an upper stage of the terrace structure, and a first stacked structure provided on a stepped side surface of the terrace structure, a second stacked structure having an active region; a buried layer covering the first and second stacked structures; and a second stacked structure formed on the buried layer and electrically connected to the first stacked structure. The semiconductor device may include one electrode and a second electrode formed on the buried layer and electrically connected to the second laminated structure.

The manufacturing method of the present invention includes a step of forming a striped ridge structure along the <011> direction on a semiconductor substrate whose main surface is the (100) plane, and a step of forming a first stacked structure having an active region on the semiconductor substrate. A second stacked structure having an active region is selectively grown on the top surface of the structure, a second stacked structure having an active region is selectively grown on one side of the ridge structure, and a third stacked structure having a third active region is selectively grown on the other side of the first Lunozi structure. A process of selectively growing on the sides,
, thereby achieving the above objective.

Further, a first laminated structure having a process-removed active region for forming a terrace structure having stepped side surfaces along the <011> direction on a semiconductor substrate whose main surface is the (1 0 0) plane is placed on the upper stage of the terrace structure. A second layer with selectively grown active regions
selectively growing a layered structure on the stepped side surface of the terrace structure.

(Example) -81 The present invention will be described below with reference to Examples.

FIG. 1 shows a sectional view of a first embodiment of the invention.

On the top surface of the n-type GaAs substrate 1 with the plane orientation (1 0 0),
Striped ridge structure (width 3μm, height 3.2μm
) 11 is in the [011] direction (resonator direction, perpendicular to the drawing)
It is set up along the

A first laminated structure 10a having a triangular cross-sectional shape is provided on the upper surface of the ridge structure 11, and the ridge structure 1l
A second laminated structure 10b1 and a third laminated structure 10c each having a triangular cross-sectional shape are provided on two side surfaces of the structure.

Any of the laminated structures 10a, 10b, 10c,
Se-doped n-type GaAs buffer layer (layer thickness 1 μm)
2, Se-doped n-type Al1+. 4Gal! ．． 6A
s cladding layer (layer thickness 0.8 μm) 3, non-doped A
l lI. l3G a s. s7A s active layer (layer thickness 0
．． 17zm) 4, Zn-doped p-type A l l+. 4G
a e, 6A s cladding layer (layer thickness 0.8 μm)
5 are laminated in this order from the surface side of the ridge structure l1. In this way, the active layer 4 parallel to the main surface of the substrate 1
A first double heterostructure 91 including the active layer 4 and second and third double heterostructures including the active layer 4 perpendicular to the main surface of the substrate are formed on the same substrate 1.

The above laminated structure 1 0 a, 1 0 b, 1
0c is covered with a buried layer 6 made of a semi-insulating GaAs layer.

In the buried layer 6, on the first laminated structure 10a, the first
An impurity diffusion region 7a is formed to electrically connect the p-type cladding layer 5 of the laminated structure 10a and the l-th p-side electrode 8a. Further, in the buried layer 6, on the second stacked structure iob, an impurity is added for electrically connecting the p-type cladding layer 5 of the second stacked structure 10b and the second p-side electrode 8b. A diffusion region 7b is formed. Further, in the buried layer 6, on the third stacked structure 10c, an impurity is added for electrically connecting the p-type cladding layer 5 of the third stacked structure 10c and the third p-side electrode 8C. A diffusion region 7C is formed. These impurity diffusion regions 7 as 7 b
s 7 C are not in contact with each other.

A first p-side electrode 8a having a strip shape is provided on the impurity diffusion region 7a of the buried layer 6 so as to face the upper surface of the ridge structure 11. Further, on the impurity diffusion layer region 7b, a striped second p-side electrode 8 is provided.
b is provided in parallel to the first p-side electrode 8a, and a striped third p-side electrode 8c is provided on the impurity diffusion layer region 7c.
is provided in parallel to the first p-side electrode 8a. Board 1
An n-side electrode 9 is formed on the entire back surface.

When a voltage is applied to the first p-side electrode 8a and the n-side electrode 9, a drive current flows within the first stacked structure 10a. As a result, a unified laser beam in the horizontal transverse mode is oscillated, and the laser beam is emitted from the end face of the first laminated structure 10a. The polarization direction of the laser beam emitted at this time is parallel to the main surface of the substrate 1.

When a voltage is applied to the second p-side electrode 8b and the n-side electrode 9, a drive current flows within the second stacked structure 10b. As a result, a unified laser beam in a horizontal transverse mode is oscillated, and the laser beam is emitted from the end face of the second laminated structure.

The polarization direction of the 11-laser light emitted at this time is perpendicular to the main surface of the substrate.

Further, when a voltage is applied to the third p {till electrode 8C and the n-side electrode 9, a drive current flows in the third stacked structure 10C. As a result, a unified laser beam in the horizontal transverse mode is oscillated, and the laser beam is emitted from the end face of the third laminated structure. The polarization direction of the laser beam emitted at this time is also perpendicular to the main surface of the substrate.

In this way, in the semiconductor laser device of this example,
The polarization direction of the laser beam emitted from the first laminated structure 10a and the polarization direction of the laser beam emitted from the second and third laminated structures 10bS 10c are in a perpendicular relationship.

By controlling the voltages applied to each of the first p-side electrode 8a, the second p-side electrode 8b, and the third p-side electrode 8C, two types of laser beams with different polarization directions are emitted simultaneously. It is also possible to emit them separately.

Therefore, if the semiconductor laser device of the present invention is used, -12
- Since one semiconductor laser element can emit two types of laser beams with polarization directions that differ by 90 degrees from each other,
This makes it possible to downsize optical measurement devices and reduce the number of parts.

Below, the method for manufacturing the semiconductor laser device shown in FIG.
This will be explained with reference to FIG.

First, on an n-type GaAs substrate 1 with a plane orientation (100),
Stripe pattern along the [011] direction (width 3 μm
) A photoresist mask 12 was formed. Next, H2
SOA etchant (H2SO4:H202: H2
By an etching process using 0=1:2:10), we want to form a ridge structure 11 with a width of 3 μm on the substrate l along the [011] direction (Fig. 2(a)).
. Note that the etching conditions were adjusted so that the height of the ridge structure 11 was approximately the same as the width of the ridge structure 11.

An Sj02 film 13 was formed on the entire surface of the substrate 1, including the surface of the photoresist mask 12 on the ridge structure 11 and the side surfaces of the ridge structure 1l, by plasma CVD (FIG. 2(b)).

-13 After this, in order to etch the SiO2 film 13, the substrate 1
An Ar ion beam was irradiated onto the surface of the substrate 1 from above. The beam irradiation direction at this time was perpendicular to the main surface of the substrate 1. Since the SiO2 film 13 formed on the side surface of the first and second structure 11 was not irradiated with the Ar ion beam, the S102 film 13 in that portion was not etched. S of other parts irradiated with Ar ion beam
The i02 film l3 was etched. In this way, the upper surface of the ridge structure 11 is covered with the photoresist mask l2,
Two side surfaces of the ridge structure l1 were covered with a SiO2 film 13 (FIG. 2(C)).

Next, an Sj3N4 film 14 was formed on the entire surface of the substrate l, including the surface of the photoresist mask 12 and the side surfaces of the ridge structure 11, by plasma CVD (FIG. 2(d)).
.

Next, the photoresist mask 12 was removed by organic cleaning of the substrate 1, and the Si02 film 13 was removed by immersing the substrate 1 in an HF solution. As a result, the Si3N4 film 14 on the photoresist mask 14 and the SiO2 film 13 was lifted off (FIG. 2(e)).

After that, by MOCVD method, an n-type GaAs huffer layer 2, an n-type A I 2.4G a [1.6A s cladding layer 3, a non-doped A 1 il. +3G a T!
．． ll7A S active layer 4, and p-type A 1 g. aG
The a 8,6A s cladding layer 5 was laminated on the substrate 1 in this order. However, no crystal growth of the above-mentioned layers occurred on the amorphous SisN4 film 14. In addition, by adjusting the crystal growth conditions, crystal growth on the (1 1 11 plane) was almost prevented from occurring.As a result, a stacked structure was formed only on the top and side surfaces of the ridge structure l1, and , 1111 facets were formed in the laminated structure. Therefore, the cross-sectional shape of each laminated structure was triangular (FIG. 2(f)).

Thus, the first
The laminated structure 10a and the second and third laminated structures 10b and 10c having the active layer 4 perpendicular to the main surface of the substrate l could be formed in the same process.

15- Next, Si3N4 was formed using a mixed solution of NH40H and HF.
After removing the film 14, a buried layer 6 made of a semi-insulating GaAs layer doped with vanadium was formed on the entire surface of the substrate 1 so as to completely cover the stacked structures 10a, 10b, 10c.

Thereafter, by doping Zn into a predetermined region of the buried layer 6, the p-type cladding layer 5 of the first stacked structure 10a and the l-th p-side electrode 8a are electrically connected on the first stacked structure 10a. An impurity diffusion region 7a for physical connection was formed.

Further, a second laminated structure 10 is placed on the second laminated structure 10b.
An impurity diffusion region 7b was formed to electrically connect the p-type cladding layer 5 and the second p-side electrode 8b. Third
An impurity diffusion region 7c for electrically connecting the p-type cladding layer 5 of the third stacked structure 10c and the third p-side electrode 8c was formed on the stacked structure 10c.

A striped l-th p-side electrode 8a was formed on the impurity diffusion region 7a of the buried layer 6 so as to face the upper surface of the ridge structure II. Further, a striped second p-side electrode 8b is provided on the impurity diffusion region 7b of one layer 6 (embedding = 16) so as to be parallel to the first p-side electrode 8a.
was formed. On the impurity diffusion region 7C of the buried layer 6, the first
A striped third p-side electrode 8C was formed so as to be parallel to the p-side electrode 8a.

On the back side of the board 1, n{IIJ? One pole 9 was formed.

In this way, the semiconductor laser device shown in FIG. 1 was manufactured.

In this way, in this example, using the MOCVD method, {1
By performing selective growth of the semiconductor layer under the condition that crystal growth on the 11 planes is difficult to occur, a stacked structure with a triangular cross-sectional shape is formed only on the top surface and two side surfaces of the ridge structure 1l, respectively. could be formed at the same time.

Next, a second embodiment will be described with reference to FIG.

In the semiconductor laser device of this example, an Se-doped 17-doped n-type GaAs puffer layer (layer thickness 1 μm) 22, a Se-doped n-type GaAs buffer layer (layer thickness 1 μm) 22,
Doped n-type A 1 a. A sG a g,5A s growth suppression layer (layer thickness 0.2 μm) 23 is laminated.

n-type AI B. 5G ag, 5A s growth suppression layer 2
A striped ridge structure (width: 5 μm, height: 3 μm) 24 is provided on the substrate 3 along the [011] direction (resonator direction, perpendicular to the drawing).

A first laminated structure 10a having a triangular cross-sectional shape is provided on the upper surface of the ridge structure 24b.
A second laminated structure 10b and a third laminated structure 10c each having a triangular cross-sectional shape are provided on two side surfaces of 4b. Which laminated structure 1 0 a, 1
0 bS1 0 c also Se-doped n-type GaAs buffer layer (layer thickness 1 μm) 2, Se-doped n-type A I B, 4
G all. 6A s cladding layer (layer thickness 0.8μm)
3. Non-doped A I B, 13G a B, B7A
s active layer (layer thickness 0.1 μm) 4, Zn-doped p-type AIB
, 4G a B, 6A s cladding layer (layer thickness 0.8 μm
) 5 are laminated in this order from the surface side of the ridge structure 24b.

-18 - Thus, the first layer including the active layer 4 parallel to the main surface of the substrate 21
A double heterostructure and second and third double heterostructures including an active layer 4 perpendicular to the main surface of the substrate 1 are formed on the same substrate.

The above laminated structure 1 0 a, 1 0 b, 1
0c is covered by the buried layer 6.

In the buried layer 6, on the first laminated structure 10a, the first
An impurity diffusion region 7a is formed to electrically connect the p-type cladding layer 5 of the laminated structure 10a and the first p-side electrode 8a. Further, in the buried layer 6, on the second stacked structure 10b, an impurity is added for electrically connecting the p-type cladding layer 5 of the second stacked structure 10b and the second p-side electrode 8b. A diffusion region 7b is formed. In the buried layer 6, on the third stacked structure 10c, impurity diffusion is performed to electrically connect the p-type cladding layer 5 of the third stacked structure 10c and the third p-side electrode 8C. A region 7c is formed. These impurity diffusion regions 7 a 17 b −,
7 C are not in contact with each other.

A first p-side electrode 8a in the form of a strip 19 is provided on the impurity diffusion region 7a of the buried layer 6 so as to face the upper surface of the ridge structure 24b. Further, on the impurity diffusion region 7b, a striped second p-side electrode 8b is formed.
is provided in parallel to the l-th p-side electrode 8a. A striped third p-side electrode 8 is provided on the impurity diffusion region 7C.
C is provided in parallel to the first p-side electrode 8a. An n-side electrode 9 is formed on the entire back surface of the substrate 21 .

Next, a method for manufacturing the semiconductor laser device of this example will be explained with reference to FIG.

First, on an n-type GaAs substrate 21 with a plane orientation (IOO),
By MOCVD method, n-type GaAs buffer 77 layer 23, n
Type A I B, 5G all, 5A s growth suppression layer 2
3. A Se-doped n-type GaAs layer (layer thickness: 3 μm) 24a was sequentially grown (FIG. 4(a)).

Next, a stripe pattern along the [011] direction (
A photoresist mask 25 having a width of 3 μm) is made of Se.
It was formed on the doped n-type GaAs layer 24a. After this, H
2SO4 etchant (H2SO4:H202: H
By etching the S20-e-doped n-type GaAs layer 24a using the 20=1:2:10), a ridge structure 24b with a width of 5 μm is formed on the substrate 21 along the [011] direction. Figure 4 (
b)). Enoching is performed using n-type Alθ,5G a [1,
The process was continued until the surface of the 5A S growth suppression layer 23 was exposed.

Next, the photoresist mask 25 is removed by organic cleaning of the wafer, and then the n-type GaAs buffer layer 2, the n-type
Type A 111.4G a9 eA sclathodic layer 3, non-doped A l l! ．． I3G a Q. s7A s active layer 4, and p-type A 1 g. aG a 9,8A S
The cladding layers 5 were laminated in this order. However, n-type Al
At θ5Ga, no crystal growth of the above-mentioned layers occurred on the 5As growth suppression layer 23. As such a growth suppressing layer, A I xG a 1-xA s (0.
5≦X≦0. 7) layers are preferred.

Further, as in the first example, by adjusting the crystal growth conditions, crystal growth on the (1 1 1) plane was made to hardly occur.

-21 Therefore, a laminated structure is formed only on the top surface and two side surfaces of the ridge structure 24b, and the laminated structure has {
1 1 1} plane facets were formed, and the cross-sectional shape of each laminated structure was triangular.

Hereinafter, through steps similar to those shown in the first example,
A buried layer 6, electrodes 8a, 8b, 8c, 9, etc. were formed, and the semiconductor laser device shown in FIG. 3 was manufactured.

Similarly to the semiconductor laser device of the first embodiment, the semiconductor laser device of this embodiment can also emit two types of laser beams with different polarization directions.

Next, a third embodiment will be described with reference to FIG.

A terrace structure (height: 3.2 μm) is formed on the upper surface of the n-type GaAs substrate 31 with a plane orientation (1 0 0), and the vertical side surface of the terrace structure is in the [011] direction (resonator direction,
perpendicular to the drawing). The main surface of the substrate 31 is divided into an upper stage 35 and a lower stage 36 by the difference in the terrace structure.

On a partial area of the upper stage 35 of the terrace structure, a striped first laminated structure 10 having a triangular cross section -22- is formed.
a, and a striped second laminated structure 10 having a triangular cross-sectional shape is provided on the stepped side surface of the terrace structure.
1) is provided. In each stacked structure, as in the above-mentioned embodiment, Se-doped n-type GaAs buffer layer (layer thickness 17 zm) 3, Se-doped n-type A I 2,4G a
g, 6A s cladding layer (layer thickness 0.8 μm) 3, non-doped Al s. +3G all. 87A S active layer (layer thickness 0.1 μm) 4, Zn-doped p-type AI. ,4
G all, 6A S cladding layer (layer thickness 0.8 μm)
5 are stacked in this order from the substrate 31 side.

In this way, the first layer including the active layer 4 parallel to the main surface of the substrate 31
A double heterostructure and a second double heterostructure including an active layer 4 perpendicular to the main surface of the substrate are formed on the same substrate.

The laminated structures 10a and 10b described above are covered with a buried layer 6.

In the buried layer 6, the first stacked structure 10a and the buried layer 6
Above, the pz cladding layer 5 of the first laminated structure 10a and the first
An impurity diffusion region 7a is formed to electrically connect the p-side electrode of the impurity diffusion region 7a. Moreover, in the buried layer 6, on the second laminated structure 10b,
An impurity diffusion region 7b is formed to electrically connect the p-type cladding layer 6 of the second stacked structure 10b and the second p-side electrode.

These impurity diffusion regions 7a and 7b are not in contact with each other.

A striped first p-side electrode 8a is provided on the impurity diffusion region 7a of the buried pad 6 so as to face the upper surface of the terrace structure. Further, on the impurity diffusion region 7b of the buried layer 6, a striped second p-side electrode 8b is provided in parallel to the first p-side electrode 8a. An n-side electrode 9 is formed on the entire back surface of the substrate l.

Next, the manufacturing method of this example will be explained with reference to FIG.

First, by etching the substrate 3l using a normal etching method, the direction along the side surface of the step is set to [011].
After forming the terrace structure, on the substrate 31, only the lower stage 36 of the terrace structure is coated with Si3
A Na film 32 was formed (FIG. 6(a)).

After this, the first laminated structure 10 is formed on the Si3N4 film 32, on the step side of the terrace structure, and on the upper stage 35 of the terrace structure.
A resist mask 33 was formed on the striped region in which a was to be formed (FIG. 6(b)).

Next, after forming the Si3N4 film 34 on the entire surface of the substrate 31, the Sj3Na film 34 is formed on the striped region where the first stacked structure 10a is to be formed on the stepped side surface and the upper step 35 of the terrace structure. It was removed by the lift-off method (Fig. 6(C)).

Hereinafter, through steps similar to those shown in the first example,
First and second laminated structures were formed, and the semiconductor laser device shown in FIG. 5 was manufactured.

In this example, the first stacked structure 10a could be formed in a region away from the step side of the terrace structure. Therefore, by widening the distance between the first stacked structure 10a and the second stacked structure 10b, the electrical separation between the first p-electrode and the second p-electrode can be ensured. I was able to do it.

In this embodiment as well, the polarization direction of the laser beam emitted from the first laminated structure 10a and the polarization direction of the laser beam emitted from the second laminated structure 10b are in a perpendicular relationship.

Therefore, by controlling the voltages applied to the first p-side electrode 8a and the second p-side electrode 8b, two types of laser beams with different polarization directions can be emitted simultaneously, or they can be emitted separately. It is also possible.

In any of the above embodiments, the case where the direction along the side surface of the ridge structure or the stepped side surface of the terrace structure is [011] has been described, but this direction is <011>.
Other crystallographically equivalent orientations generally indicated by .

Further, in any of the above embodiments, the MOCVD method was used to selectively grow the laminated structure, but other methods such as the MBE method may be used.

(Effects of the Invention) As described above, according to the semiconductor laser device of the present invention, the first
The polarization direction of the laser beam emitted from the second laminated structure 26- and the polarization direction of the laser beam emitted from the second laminated structure are perpendicular to each other. By controlling the voltages applied to the first electrode, second electrode, and third electrode, it is possible to emit two types of laser beams with different polarization directions simultaneously or separately. be.

Therefore, if the semiconductor laser device of the present invention is used, one semiconductor laser device can produce two light beams whose polarization directions differ by 90 degrees from each other.
Since different types of laser beams can be emitted, it is possible to downsize the optical measurement device and reduce the number of parts.

According to the manufacturing method of the present invention, by performing selective growth of semiconductor layers under the condition that crystal growth on the flll1 plane is difficult to occur, a plurality of laminated structures having active regions are grown on the upper surface of the sozoelectric structure. and side surfaces, or the upper stage and stepped side surfaces of a terrace structure, respectively. As a result, two polarization directions differ by 90 degrees from each other.
A semiconductor laser device that emits various types of laser light can be manufactured through simple steps.

27-4. Oh no! ■ Figure 1 is a sectional view showing the first embodiment of the present invention, Figure 2 (
a) to (f) are cross-sectional views for explaining the manufacturing method of the first example, FIG. 3 is a cross-sectional view showing the second example, and FIGS. 4(a) and (b) are cross-sectional views for explaining the manufacturing method of the first example. 5 is a sectional view showing the third embodiment, and FIGS. 6(a) to (c) are sectional views explaining the manufacturing method of the third embodiment. FIG. 7 is a sectional view showing a conventional example.

1, 2L 3 1-n type GaAs substrate, 2-S
e-doped n-type GaAs buffer layer, 3...Se-doped n-type A I T! ．． 4G all. aA s cladding layer, 4...Non-doped A 1 11.13G a l
l. B7A s active layer, 5-Z n-doped p-type A
1 [1.4G a s, 6A s cladding layer, 6.
...Buried layer, 7a, 7b, 7c--Impurity diffusion region, 8
a, 8 b ・p side electrode, 9-・n {ill electrode, 1
0a, 10b110c...Laminated structure, 11, 24b・
...Ridge structure.

that's all

Claims (1)

[Claims] 1. A semiconductor substrate, a striped ridge structure formed on the semiconductor substrate, a first stacked structure having an active region provided on the upper surface of the ridge structure, and the ridge. a second laminated structure having an active region provided on one side of the structure; a third laminated structure having an active region provided on the other side of the ridge structure; and a buried layer covering the third laminated structure, a first electrode formed on the buried layer and electrically connected to the first laminated structure, and a first electrode formed on the buried layer, a second electrode electrically connected to the second laminated structure; and a third electrode formed on the buried layer and electrically connected to the third laminated structure. Semiconductor laser element. 2. a semiconductor substrate; a terrace structure formed on the semiconductor substrate; a first laminated structure having an active region provided above the terrace structure; and a first stacked structure provided on a stepped side surface of the terrace structure; a second laminated structure having an active region; a buried layer covering the first and second laminated structures; and a second laminated structure formed on the buried layer and electrically connected to the first laminated structure. A semiconductor laser device comprising: a first electrode; and a second electrode formed on the buried layer and electrically connected to the second stacked structure. 3. <0 on a semiconductor substrate whose main plane is the (100) plane
11> forming a striped ridge structure along the direction, selectively growing a first laminated structure having an active region on the upper surface of the ridge structure, and growing a second laminated structure having an active region on the top surface of the ridge structure. A method for manufacturing a semiconductor laser device, comprising the steps of selectively growing a third stacked structure having an active region on one side surface and selectively growing a third stacked structure having an active region on the other side surface of the ridge structure. 4. <0 on a semiconductor substrate whose main plane is the (100) plane
11> forming a terrace structure having a stepped side surface along the direction, selectively growing a first stacked structure having an active region on the upper layer of the terrace structure, and growing a second stacked structure having an active region on the terrace structure. A method for manufacturing a semiconductor laser device, comprising: a step of selectively growing on the side surface of a step;