JPH03217048A - Heat transfer material for junction - Google Patents
Heat transfer material for junctionInfo
- Publication number
- JPH03217048A JPH03217048A JP9012090A JP1209090A JPH03217048A JP H03217048 A JPH03217048 A JP H03217048A JP 9012090 A JP9012090 A JP 9012090A JP 1209090 A JP1209090 A JP 1209090A JP H03217048 A JPH03217048 A JP H03217048A
- Authority
- JP
- Japan
- Prior art keywords
- heat transfer
- mixed
- resin material
- transfer material
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 58
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- 239000002923 metal particle Substances 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000005304 joining Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は接合面間に形成された空隙内の熱伝導を向上さ
せる技術、特に、半導体装置などの発熱部品と放熱器な
どの附属部品との間に配設して両者間の熱伝導を促進さ
せるために用いて効果のある技術に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a technology for improving heat conduction within a gap formed between bonding surfaces, and in particular, to technology for improving heat conduction within a gap formed between bonding surfaces, and in particular between a heat generating component such as a semiconductor device and an accessory component such as a radiator. The present invention relates to a technique that can be effectively used to promote heat conduction between the two.
例えば、消費電力の大きい半導体装置では、放熱のため
の放熱器もしくは同等の効果を有する部材が半導体チッ
プの放熱面に取り付けられる。そして、一体化を考慮し
ない場合、放熱面にシリコーングリースなどを塗布し、
放熱器をねじ止めなどにより固定するが、一体化を図る
場合には、接続面がともにはんだ濡れ性が良ければ、は
んだを用いて接続する。また、はんだ接続が行えない場
合には、樹脂材などに熱伝導率の高い微粒子を混合した
ものを接着及び伝熱のために用い、発熱部材と放熱部材
とを一体化している。For example, in a semiconductor device that consumes a large amount of power, a heat sink for heat radiation or a member having an equivalent effect is attached to the heat radiation surface of the semiconductor chip. If integration is not considered, apply silicone grease or the like to the heat dissipation surface.
The radiator is fixed with screws or the like, but if it is to be integrated, if both connection surfaces have good solder wettability, they can be connected using solder. If solder connection is not possible, a resin material mixed with fine particles having high thermal conductivity is used for adhesion and heat transfer to integrate the heat generating member and the heat radiating member.
このような熱伝導を考慮した樹脂材に関する技術は、例
えば、総研出版株式会社発行、武石善幸監訳「超LSI
テクノロジー」617頁に記載されている。Technologies related to resin materials that take such heat conduction into account are known, for example, in the book "Ultra LSI
Technology” page 617.
ところで、本発明者は、樹脂材を主体としたものを伝熱
材料として用いた場合の熱伝導性について検討した。By the way, the present inventor studied the thermal conductivity when a material mainly composed of a resin material is used as a heat transfer material.
以下は、本発明者によって検討された技術であり、その
概要は次の通りである。The following are the techniques studied by the present inventor, and the outline thereof is as follows.
すなわち、従来、伝熱材料には二液混合形の熱硬化性樹
脂材が用いられ、この樹脂材に混ぜる微粒子として、ア
ルミナ、シリカ、セラミックスなどが用いられている。That is, conventionally, a two-component mixed type thermosetting resin material has been used as a heat transfer material, and alumina, silica, ceramics, etc. have been used as fine particles mixed with this resin material.
ところが、前記の如く微粒子を混合した樹脂材による接
合部用伝熱材料においては、微粒子材料が、それ自身伝
熱性に優れるとは言えないものであるため、伝熱部に用
いるには不十分であることが本発明者に見出された。However, in the heat transfer material for joints made of a resin material mixed with fine particles as described above, the fine particle material itself cannot be said to have excellent heat transfer properties, so it is insufficient for use in heat transfer parts. The inventor has discovered something.
そこで、本発明の目的は、接着機能及び高熱伝導性を備
えることのできる技術を提供することに3一
ある。Therefore, an object of the present invention is to provide a technology that can provide adhesive function and high thermal conductivity.
本発明の前記目的と新規な特徴は、本明細書の記述およ
び添付図面から明らかになるであろう。The above objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、以下の通りである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、発熱体とこれに接合される物体との間に配設
されて、前記両物体間の熱伝導及び接合を司る接合部用
伝熱材料であって、樹脂材と、この樹脂材中に混入され
る金属およびセラミックスの粒体とから成るようにした
ものである。That is, it is a heat transfer material for a joint part that is disposed between a heating element and an object to be joined to the heat generating element and controls heat conduction and joining between the two objects, and includes a resin material and a resin material in the resin material. It consists of mixed metal and ceramic particles.
上記した手段によれば、セラミックスと共に樹脂材中に
混入された金属粒体が、セラミックスに対し数倍〜10
倍程度゜の熱伝導度を有しているため、伝熱材料内の熱
抵抗が低減するように機能する。また、セラミックス粒
体は、金属粒体に比べて直径が小さく、樹脂材中に分散
して金属粒体同士の接触を防止すると共に伝熱性を改善
するよう4
に機能する。According to the above-mentioned means, the metal particles mixed into the resin material together with the ceramics are several times to 10 times larger than the ceramics.
Since it has a thermal conductivity that is about twice as high, it functions to reduce the thermal resistance within the heat transfer material. Furthermore, the ceramic grains have a smaller diameter than the metal grains, and when dispersed in the resin material, function to prevent contact between the metal grains and improve heat conductivity.
〔実施例1〕
第1図は本発明による伝熱部用接合材料の製造方法を示
す説明図である。[Example 1] FIG. 1 is an explanatory diagram showing a method of manufacturing a bonding material for a heat transfer part according to the present invention.
固着材料には、主剤1と硬化剤2から成る二液性樹脂材
が用いられる。主剤1及び硬化剤2は、各々異なる容器
に収納され、使用時に混合される。A two-component resin material consisting of a main agent 1 and a curing agent 2 is used as the fixing material. The main agent 1 and the curing agent 2 are stored in different containers and mixed at the time of use.
まず、主剤1の入った容器に金属粒体3及びセラミック
ス粒体(またはシリカ粒体)4を投入してかき混ぜる。First, metal granules 3 and ceramic granules (or silica granules) 4 are placed in a container containing base material 1 and stirred.
ついで、各粒体を混入した主剤1に硬化剤2を混合して
かき混ぜることにより、硬化反応を進行させる。さらに
、必要に応じて、加熱により硬化を促進する。セラミッ
クス粒体4は、金属粒体3よりも直径が小さく、樹脂材
中に平均に分散され、金属粒体3同士が接触するのを防
止するように働くと共に、伝熱性の改善にも寄与する。Next, the hardening agent 2 is mixed into the base material 1 mixed with each particle and stirred to advance the hardening reaction. Furthermore, if necessary, curing is accelerated by heating. The ceramic grains 4 have a smaller diameter than the metal grains 3, are evenly dispersed in the resin material, work to prevent the metal grains 3 from coming into contact with each other, and also contribute to improving heat conductivity. .
また、樹鮨中の架橋密度が硬化剤配合比によって左右さ
れるタイプにおいては、配合比の選択によって、硬化後
の樹脂形態をゲル状、柔らかいゴム状、硬いゴム状など
に幅広くコントロールすることができる。In addition, for types in which the crosslinking density in Jusushi is influenced by the curing agent compounding ratio, the form of the resin after curing can be controlled in a wide range of ways, such as gel-like, soft rubber-like, hard rubber-like, etc. by selecting the compounding ratio. can.
また、薄い伝熱接着層を必要とする場合、金属粒体3に
Bi(ビスマス)−Pb(鉛), BiPb−Sn(錫
), Bi−Sn−Cd (カドミウム), B
i−Sn−Zn (亜鉛),Bi−Cd,Pb−Snな
どの融点が200℃以下の低融点金属を用いるのがよい
。In addition, when a thin heat-transfer adhesive layer is required, the metal particles 3 include Bi (bismuth)-Pb (lead), BiPb-Sn (tin), Bi-Sn-Cd (cadmium), B
It is preferable to use a low melting point metal such as i-Sn-Zn (zinc), Bi-Cd, or Pb-Sn, which has a melting point of 200° C. or less.
このような組成の伝熱部用接合材料を半導体装置に用い
た一例が第2図である。FIG. 2 shows an example in which a bonding material for a heat transfer part having such a composition is used in a semiconductor device.
この使用例では、上記金属粒体3として上記組成による
低融点金属粒体5を用いている。そして、上記の製造方
法に従って低融点金属粒体5を混合した接合材料を、部
品6または部品7の一方の接着面に塗布して部品同士を
密着させ、両者が圧着するように加圧し、この状態のま
ま加熱雰囲気に放置して接合材料中の樹脂を硬化させる
。In this usage example, low melting point metal particles 5 having the above composition are used as the metal particles 3. Then, according to the above manufacturing method, a bonding material mixed with the low melting point metal particles 5 is applied to the bonding surface of one of the parts 6 or 7 to make the parts stick together, and pressure is applied so that the two are crimped. The resin in the bonding material is cured by leaving it in a heated atmosphere.
このとき、低融点金属粒体5は、融点が低いため、溶融
及び加圧により、球状の低融点金属粒体5は押し潰され
て偏平な形状に変化する。しだがって、部品6と部品7
の間の接合材料の厚みは、低融点金属粒体5の直径より
も薄くなり、この部分の熱抵抗を小さくすることができ
、放熱効果を高めることができる。At this time, since the low melting point metal particles 5 have a low melting point, the spherical low melting point metal particles 5 are crushed and changed into a flat shape by melting and pressurization. Therefore, parts 6 and 7
The thickness of the bonding material between the two is made thinner than the diameter of the low melting point metal particles 5, so that the thermal resistance of this portion can be reduced and the heat dissipation effect can be enhanced.
〔実施例2〕 第3図は本発明の他の実施例を示す断面図である。[Example 2] FIG. 3 is a sectional view showing another embodiment of the present invention.
本実施例は、前記実施例が接合材料を塗布などの方法に
よって部品間に介在させたのに対し、1つの部品として
取り扱えるようにシート状に加工したものである。すな
わち、第3図に示すように、前記した方法により〔主剤
l十硬化剤2+金属粒体3+セラミックス粒体4 (又
は低融点金属粒体5)〕から成る粒体温合樹脂材8をシ
ート状にし、その外表面をシリコーンゲルによるゲル状
層9によって覆うようにしたものである。このゲル状層
9は、グリスと異なり液垂れを生じることがない。In this example, whereas in the previous example the bonding material was interposed between the parts by a method such as coating, the present example is processed into a sheet shape so that it can be handled as one part. That is, as shown in FIG. 3, a granular polymeric resin material 8 consisting of [base material 10 curing agent 2 + metal particles 3 + ceramic particles 4 (or low melting point metal particles 5)] is formed into a sheet as shown in FIG. and its outer surface is covered with a gel-like layer 9 made of silicone gel. Unlike grease, this gel-like layer 9 does not cause dripping.
使用に際しては、第2図における塗布の代わりに部品間
に挟み込於ばよい。When in use, instead of applying it as shown in FIG. 2, it may be inserted between parts.
この構成では、ゲル状層9が自在に変形するため、これ
に接する被接着物(部品など)が凹凸を有していても、
その全面を埋めるように接合する。In this configuration, since the gel layer 9 deforms freely, even if the adhered object (such as a component) in contact with it has unevenness,
Join so as to fill the entire surface.
したがって、接合面に気泡などを生じさせることがなく
、伝熱面積を広くし、熱抵抗を小さくすることができる
。また、ゲル状層9は粘着力を有しているた必、接着剤
として機能し、これに接する被接着物を保持ならびに固
定することができる。Therefore, it is possible to widen the heat transfer area and reduce thermal resistance without creating bubbles on the joint surfaces. Furthermore, since the gel layer 9 has adhesive strength, it functions as an adhesive and can hold and fix objects that come into contact with it.
なお、更に伝熱性が必要な場合には、ゲル状層9に金属
粒体3、セラミックス粒体4などを混入させればよい。In addition, if further heat conductivity is required, metal particles 3, ceramic particles 4, etc. may be mixed into the gel-like layer 9.
以上本発明によってなされた発明を実施例に基づき具体
的に説明したが、本発明は前記実施例に限定されるもの
ではなく、その要旨を逸脱しない範囲で種々変更可能で
あることは言うまでもない。Although the invention made by the present invention has been specifically described above based on Examples, it goes without saying that the present invention is not limited to the above-mentioned Examples and can be modified in various ways without departing from the gist thereof.
例えば、前記実施例では主剤1に粒体を混入するものと
したが、硬化剤2に混入してもよいし、或いは両方に混
入してもよい。For example, in the above embodiment, the particles were mixed into the main agent 1, but they may be mixed into the curing agent 2, or into both.
以上の説明では、主として本発明者によってなされた発
明をその利用分野である半導体装置に適用した場合につ
いて説明したが、発熱する物体とこれに接合される物体
に広く適用可能である。In the above description, the invention made by the present inventor was mainly applied to semiconductor devices, which is its field of application, but the invention can be widely applied to objects that generate heat and objects bonded thereto.
本願において開示される発明のうち、代表的なものによ
って得られる効果を簡単に説明すれば下記の通りである
。Among the inventions disclosed in this application, the effects obtained by typical ones are as follows.
すなわち、発熱体とこれに接合される物体との間に配設
されて、前記両物体間の熱伝導及び接合を司る接合部用
伝熱材料であって、樹脂材と、この樹脂材中に混入され
る金属およびセラミ.ソクスの粒体とから成るようにし
たので、伝熱材料内の熱抵抗を低減し、熱伝導性を向上
させることが出来る。That is, it is a heat transfer material for a joint part that is disposed between a heating element and an object to be joined to the heat generating element and controls heat conduction and joining between the two objects, and includes a resin material and a resin material in the resin material. Metals and ceramics mixed in. Since the heat transfer material is composed of grains of Sox, the thermal resistance within the heat transfer material can be reduced and the thermal conductivity can be improved.
第1図は本発明による伝熱部用接合材料の製造方法を示
す説明図、
第2図は本発明による伝熱部用接合材料の使用例を示す
断面図、
第3図は本発明の他の実施例を示す断面図である。
1・・・主剤、2・・・硬化剤、3・・・金属粒体、4
・・・セラミックス粒体、5・・・低融点金属粒体、6
.7・・・部品、8・・・粒体混合樹脂材、9・・・ゲ
ル状層。FIG. 1 is an explanatory diagram showing a method for manufacturing a bonding material for heat transfer parts according to the present invention, FIG. 2 is a sectional view showing an example of use of the bonding material for heat transfer parts according to the present invention, and FIG. FIG. 1... Main agent, 2... Curing agent, 3... Metal particles, 4
... Ceramic granules, 5... Low melting point metal particles, 6
.. 7... Parts, 8... Granular mixed resin material, 9... Gel layer.
Claims (1)
、前記両物体間の熱伝導及び接合を司る接合部用伝熱材
料であって、樹脂材と、この樹脂材中に混入される金属
およびセラミックスの粒体とから成ることを特徴とする
接合部用伝熱材料。 2、前記樹脂材を二液混合型とし、この二液の配合比を
要求される硬化後の弾性に応じて設定することを特徴と
する請求項1記載の接合部用伝熱材料。 3、前記金属粒体の融点が、前記樹脂材のキュア温度以
下であることを特徴とする請求項1記載の接合部用伝熱
材料。 4、請求項1記載の伝熱材料をシート状にし、その外表
面をゲル状樹脂材で被覆したことを特徴とする接合部用
伝熱材料。[Scope of Claims] 1. A heat transfer material for a joint, which is disposed between a heating element and a member to be joined to the heat generating element and controls heat conduction and joining between the two objects, the material comprising a resin material and A heat transfer material for joints, characterized in that it consists of metal and ceramic particles mixed in this resin material. 2. The heat transfer material for joints according to claim 1, wherein the resin material is a two-component mixture type, and the blending ratio of the two components is set depending on the required elasticity after curing. 3. The heat transfer material for joints according to claim 1, wherein the melting point of the metal particles is lower than the curing temperature of the resin material. 4. A heat transfer material for joints, characterized in that the heat transfer material according to claim 1 is formed into a sheet and the outer surface thereof is coated with a gel-like resin material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9012090A JPH03217048A (en) | 1990-01-22 | 1990-01-22 | Heat transfer material for junction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9012090A JPH03217048A (en) | 1990-01-22 | 1990-01-22 | Heat transfer material for junction |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03217048A true JPH03217048A (en) | 1991-09-24 |
Family
ID=11795875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9012090A Pending JPH03217048A (en) | 1990-01-22 | 1990-01-22 | Heat transfer material for junction |
Country Status (1)
Country | Link |
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JP (1) | JPH03217048A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001065603A1 (en) * | 2000-02-29 | 2001-09-07 | Siemens Aktiengesellschaft | Heat-conducting adhesive compound and a method for producing a heat-conducting adhesive compound |
JP2003176414A (en) * | 2001-12-11 | 2003-06-24 | Shin Etsu Chem Co Ltd | Thermally conductive silicone composition, cured product thereof and method for laying the same, and heat- releasing structure for semiconductor device using the same |
US8726573B2 (en) | 2009-09-29 | 2014-05-20 | Aisin Seiki Kabushiki Kaisha | Window regulator device |
-
1990
- 1990-01-22 JP JP9012090A patent/JPH03217048A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001065603A1 (en) * | 2000-02-29 | 2001-09-07 | Siemens Aktiengesellschaft | Heat-conducting adhesive compound and a method for producing a heat-conducting adhesive compound |
US6823915B2 (en) | 2000-02-29 | 2004-11-30 | Siemens Aktiengesellschaft | Heat-conducting adhesive joint with an adhesive-filled, porous heat conductor |
KR100735933B1 (en) * | 2000-02-29 | 2007-07-06 | 지멘스 악티엔게젤샤프트 | Heat-conducting adhesive compound and a method for producing a heat-conducting adhesive compound |
JP2003176414A (en) * | 2001-12-11 | 2003-06-24 | Shin Etsu Chem Co Ltd | Thermally conductive silicone composition, cured product thereof and method for laying the same, and heat- releasing structure for semiconductor device using the same |
US8726573B2 (en) | 2009-09-29 | 2014-05-20 | Aisin Seiki Kabushiki Kaisha | Window regulator device |
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