JPH03207769A - Photoresist composition for electrostatic coating - Google Patents
Photoresist composition for electrostatic coatingInfo
- Publication number
- JPH03207769A JPH03207769A JP153890A JP153890A JPH03207769A JP H03207769 A JPH03207769 A JP H03207769A JP 153890 A JP153890 A JP 153890A JP 153890 A JP153890 A JP 153890A JP H03207769 A JPH03207769 A JP H03207769A
- Authority
- JP
- Japan
- Prior art keywords
- organic solvent
- boiling point
- ethylene glycol
- photoresist composition
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 19
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 17
- 238000009503 electrostatic coating Methods 0.000 title claims description 9
- 239000003960 organic solvent Substances 0.000 claims abstract description 19
- 238000009835 boiling Methods 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 abstract description 18
- 238000000576 coating method Methods 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 abstract description 6
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 abstract description 5
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 11
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- -1 propatool Chemical compound 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- CUZKCNWZBXLAJX-UHFFFAOYSA-N 2-phenylmethoxyethanol Chemical compound OCCOCC1=CC=CC=C1 CUZKCNWZBXLAJX-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、静電塗布用の液状フォトレジスト組成物に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to liquid photoresist compositions for electrostatic coating.
［従来の技術］
従来よりフォトレジストは導体パターン形成用として広
く用いられている。フォトレジストは、その性状より固
体状及び液体状に大別され、更に各々ネガタイプとポジ
タイプとに区分される。これらのレジストは用途に応じ
て適宜選択されているが、例えば、プリント配線板には
ドライフィルムレジストが主流であり、テープ自動ボン
ディング用のフィルムキャリアには液状フォトレジスト
が主流となっている。[Prior Art] Photoresists have conventionally been widely used for forming conductor patterns. Photoresists are roughly classified into solid and liquid types based on their properties, and are further divided into negative types and positive types. These resists are appropriately selected depending on the application, and for example, dry film resists are mainstream for printed wiring boards, and liquid photoresists are mainstream for film carriers for automatic tape bonding.
［発明が解決しようとする課題］
ところで、ドライフィルムレジストは解像度が劣り、コ
ストが高く、液状フォトレジストは解像度が優れ、かつ
コストが安い反面以下のような欠点がある。すなわち、
ＩＣ回路の伝送信号の高速化に対応するために、配線技
術の面より３０〜５０μ票の導体の厚みが要求されてい
るが、この目的を達成するためには、基板金属表面上に
形成するレジスト膜の厚みは３０μ論以上が必要となる
。[Problems to be Solved by the Invention] Dry film resists have poor resolution and are high in cost, while liquid photoresists have excellent resolution and low cost, but have the following drawbacks. That is,
In order to cope with the increase in the speed of transmission signals of IC circuits, a conductor thickness of 30 to 50 μm is required from the perspective of wiring technology. The thickness of the resist film needs to be 30 μm or more.
しかし、厚み３０μｍ以上といったレジストの厚膜を形
成させる場合には、ロールコータ−、フローコーター、
デイプコーター、ホヮイラー、スピンナー等といったい
ずれの塗布方法でも多数回の塗布が必要であり、かつ塗
布する都度にベーキングを行なわなければならず、生産
効率が著しく低下するといった欠点である。However, when forming a thick resist film with a thickness of 30 μm or more, a roll coater, a flow coater,
All of the coating methods, such as dip coater, wheeler, spinner, etc., require multiple coatings, and baking must be performed each time the coating is applied, resulting in a significant drop in production efficiency.
本発明の目的は、レジスト厚膜生成工程の高生産効率化
を可能にする静ｍ塗布用液状フォトレジスト組成物の提
供にある。An object of the present invention is to provide a liquid photoresist composition for static coating, which enables high production efficiency in the process of forming a resist thick film.
［課題を解決するための手段〕
上記課題を解決する本発明の静電塗布用液状フォトレジ
スト組成物は沸点１８０℃以上の有機溶剤が５〜１５容
量％、沸点１３０〜１６０℃の有機溶剤が７０〜８０容
量％、残部が沸点１００°Ｃ前後の有機溶剤からなる有
機溶剤１００部と、樹脂２０部以上とからなり、その粘
度が１００〜５０００ＰＳであることを特徴とするもの
である。[Means for Solving the Problems] The liquid photoresist composition for electrostatic coating of the present invention that solves the above problems contains 5 to 15% by volume of an organic solvent with a boiling point of 180°C or higher and an organic solvent with a boiling point of 130 to 160°C. It is characterized in that it consists of 100 parts of an organic solvent of 70 to 80% by volume, the remainder being an organic solvent with a boiling point of around 100°C, and 20 parts or more of a resin, and has a viscosity of 100 to 5000 PS.
本発明の沸点１８０°Ｃ以上の有機溶剤とは、エチレン
グリコール、エチレングリコールモノフェニルエーテル
、エチレングリコールモノベンジルエーテル、ジエチレ
ングリコール、ジエチレングリコールモノエチルエーテ
ル、ジエチレングリコールモノブチルエーテル、ジエチ
レングリコールジエチルエーテル、ジエチレングリコー
ルモノメチルエーテル、ジプロピレングリコールモノメ
チルエーテル等であり、沸点１３０〜１６０℃の有機溶
剤とは、エチレングリコールモノエチルエーテル、エチ
レングリコールモノエチルエーテルアセテート、エチレ
ングリコールジエチルエーテル、キシレン、アセチルア
セトン等であり、沸点１００℃前後の有機溶剤とは、ト
ルエン、シクロへ牛サン、プロパツール、プロピルエー
テル、ジエチルケトン、メチルエチルケトン等である。The organic solvents with a boiling point of 180°C or higher in the present invention include ethylene glycol, ethylene glycol monophenyl ether, ethylene glycol monobenzyl ether, diethylene glycol, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol monomethyl ether, and dipropylene. Organic solvents with a boiling point of 130 to 160°C include glycol monomethyl ether, etc., and organic solvents with a boiling point of around 100°C include ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol diethyl ether, xylene, acetylacetone, etc. These include toluene, cyclohexane, propatool, propyl ether, diethyl ketone, methyl ethyl ketone, etc.
また、樹脂とは、アクリル系、ウレタン系等の樹脂であ
る。さらに、本発明の液状フォトレジスト組成物は自動
車等の大型塗装物から自動車部品や家電製品等の小型塗
装物に至る広範囲の物の塗装に用いうるものである。Further, the resin is an acrylic resin, a urethane resin, or the like. Further, the liquid photoresist composition of the present invention can be used for coating a wide range of objects, from large-scale painted objects such as automobiles to small-sized painted objects such as automobile parts and home appliances.
［作用］
沸点１８０°Ｃ以上の有機溶剤を５〜１５容量％（以下
％と示す。）とするのは、５％未満ではレジストの乾燥
速度が速すぎ、レジストの吐出口にレジストが雲の巣状
に析出し、これがレジスト膜中に巻き込まれ、均一な膜
厚が得られないからであり、１５％を越えると乾燥速度
が遅くなりすぎ、塗布されて生成ｌ、たレジスト膜中に
流れが生じ、均一な膜厚が得られないからである。沸点
１３０〜１６０℃の有機溶剤を７０〜８０％とするのは
、７０％未満では、レジストの吐出口への雲の巣状レジ
ストの析出が顕著になり、８０％を越えると塗布されて
生成したレジスト膜中に流れが生じ易くなるからである
。残部に沸点１００°Ｃ前後の有機溶剤を用いるのは、
樹脂の溶解性を高め、かつ粘度を所定の値以上とするた
めである。また、この様に調製した溶剤１００部に樹脂
を加えて液状フォトレジスト組成物を調合するに際して
、樹脂を２０部以上とするのは、２０部未満では、１回
の塗布で３０μ■以上の厚膜が得られないからである。[Function] The reason why the organic solvent with a boiling point of 180°C or higher is 5 to 15% by volume (hereinafter referred to as %) is that if it is less than 5%, the drying rate of the resist is too fast, and the resist will form a cloud at the resist discharge port. This is because the deposits form in nests and get caught up in the resist film, making it impossible to obtain a uniform film thickness. This is because a uniform film thickness cannot be obtained. The reason why the organic solvent with a boiling point of 130 to 160°C is 70 to 80% is that if it is less than 70%, cloud nest-like deposits of resist will be deposited on the resist discharge port, and if it exceeds 80%, it will be coated and formed. This is because flow is likely to occur in the resist film. Using an organic solvent with a boiling point of around 100°C for the remainder,
This is to increase the solubility of the resin and to increase the viscosity to a predetermined value or higher. Furthermore, when preparing a liquid photoresist composition by adding a resin to 100 parts of the solvent prepared in this way, it is important to use 20 parts or more of the resin because if the resin is less than 20 parts, a thickness of 30μ■ or more can be obtained in one application. This is because a film cannot be obtained.
さらに、調合後の粘度を１００〜５００Ｃ”ＴｐＳとす
るのは、あまり粘度が低いと塗布された膜の流動性が高
く、塗布されて生成したレジスト膜中に流れが生じ易く
なるからであり、あまりに高いと、噴霧不良を起こし易
くなるばかりでなく、平滑なレジスト膜が得られず、最
終的に得られる製品の加工精度を低下させることになる
からである。Furthermore, the reason why the viscosity after preparation is set to 100 to 500 C"TpS is because if the viscosity is too low, the applied film will have high fluidity and flow will easily occur in the applied resist film. This is because if it is too high, not only will spraying defects be likely to occur, but a smooth resist film will not be obtained, and the processing accuracy of the final product will be reduced.
本発明の静電塗布用フォトレジスト組成物の使用に際し
て、塗布後の乾燥は温風乾燥、遠赤外線乾燥、パネルヒ
ーター等を用いて行なうが、乾燥温度は用いる静電塗布
用フォトレジスト組成物の組成や膜厚によって異なり、
予め求めておくことが望ましい。When using the photoresist composition for electrostatic coating of the present invention, drying after coating is performed using hot air drying, far-infrared drying, panel heater, etc. Varies depending on composition and film thickness,
It is desirable to obtain it in advance.
［実施例−１］
厚さ５０μ嘗のカプトン（東し・デュポン社製）の片面
上に、スパッタ法により厚さ１μ箇の銅被膜を形成させ
た基板を用い、アースを取ったコンベア上に前記基板を
テープで張り付けた。このとき、基板と塗布用噴霧器の
吐出口との距離を１５０ｍｍとした。[Example-1] A substrate was prepared by forming a 1 μm thick copper film on one side of a 50 μm thick Kapton (manufactured by Azuma DuPont) by sputtering, and placed it on a grounded conveyor. The substrate was attached with tape. At this time, the distance between the substrate and the discharge port of the coating sprayer was 150 mm.
次いで、コンベアを１ｍ／ｍｉｎの速度で移動させなが
ら、直流電圧−８０ＫＶ、電流０．０６ｍＡ、吐出量４
５ｒｎｌ／ｍｉｎの条件で、ジプロピレングリコールモ
ノメチルエーテル１４％、エチレングリコールモノエチ
ルエーテルアセテート７５％、トルエン１１％からなる
溶剤１００部に、アクリルポリマーとアクリルエステル
との混合物を含量で５１，５部を混合し、得た粘度４０
０ＣＰＳのアルカリ現像型液状静電塗布用フォトレジス
ト組成物を銅表面上に噴霧させた後、７０°Ｃで６０分
間のベーキングを行なった。Next, while moving the conveyor at a speed of 1 m/min, the DC voltage was -80 KV, the current was 0.06 mA, and the discharge amount was 4.
Under conditions of 5rnl/min, 51.5 parts of a mixture of acrylic polymer and acrylic ester was added to 100 parts of a solvent consisting of 14% dipropylene glycol monomethyl ether, 75% ethylene glycol monoethyl ether acetate, and 11% toluene. Mixed and obtained viscosity 40
After spraying a 0 CPS alkaline developable liquid electrostatic coating photoresist composition onto the copper surface, baking was performed at 70° C. for 60 minutes.
得られた膜の厚みをダイヤルゲージにより測定した結果
、約４５μ蹄の均一なレジスト厚膜が１回の塗布で形成
されていることがわかった。As a result of measuring the thickness of the obtained film using a dial gauge, it was found that a uniform thick resist film of approximately 45 μm thickness was formed by one application.
［実施例−２］
厚さ５０μｌのカプトン（東し・デュポン社製）の片面
上に、無電解銅めっきし、次いで電解銅めっきをするこ
とにより厚さ１μ−の銅被膜を形成させた基板を用い、
アースを取ったコンベア上に前記基板をテープで張り付
けた。このとき、基板と塗布用噴霧器の吐出口との距離
を１５０ｍｍとした。[Example-2] A substrate in which a 1 μ-thick copper film was formed on one side of a 50 μl thick Kapton (manufactured by Toshi DuPont) by electroless copper plating and then electrolytic copper plating. using
The board was pasted with tape on a grounded conveyor. At this time, the distance between the substrate and the discharge port of the coating sprayer was 150 mm.
次いで、コンベアを１ｍ／ｒｒｉｉｎの速度で移動させ
ながら、直流電圧−６０ＫＶ、電流０．０６ｒｒｉＡ、
吐出量４５ ｍ １ ／ ｍ ｉ ｎの条件で、ジエチ
レングリコールモノメチルエーテル７％、エチレングリ
コールモノエチルエーテルアセテート７８％、メチルエ
チルケトン１５％からなる溶剤１００部に、アクリルポ
リマーとアクリルエステルとの混合物を合量で４２．８
部を混合し、得た粘度１５０ＣＰＳのアルカリ現像型液
状静電塗布用フォトレジスト組成物を銅表面上に噴霧さ
せた後、７０°Ｃで６０分間のベーキングを行なった。Next, while moving the conveyor at a speed of 1 m/rriin, a DC voltage of -60 KV, a current of 0.06 rriA,
A mixture of acrylic polymer and acrylic ester was added to 100 parts of a solvent consisting of 7% diethylene glycol monomethyl ether, 78% ethylene glycol monoethyl ether acetate, and 15% methyl ethyl ketone at a discharge rate of 45 m 1 / min. 42.8
The resulting alkaline-developable liquid electrostatic coating photoresist composition having a viscosity of 150 CPS was sprayed onto the copper surface, followed by baking at 70° C. for 60 minutes.
得られた膜の厚みをダイヤルゲージにより測定した結果
、約４２μｌの均一なレジスト厚膜が１回の塗布で形成
されていることがわかった。As a result of measuring the thickness of the obtained film using a dial gauge, it was found that a uniform thick resist film of approximately 42 μl was formed in one application.
［比較例］
アルカリ現像型液状静電塗布用フォトレジスト組成物の
溶剤組成を以下の様にして実施例−１と同様な操作をし
た。[Comparative Example] The same operation as in Example 1 was carried out using the following solvent composition for an alkali-developable liquid electrostatic coating photoresist composition.
Ａ：エチレンクリコールモノエチルエーテルアセテート
８０％、エチレングリコールモノエチルエーテル１３％
、トルエン７％
Ｂ：エチレングリコールモノエチルエーテルアセテート
・６０％、エチレングリコールモノエチルエーテル１０
％、トルエン２５％
Ａの粘度は６００ ＣＰＳであり、Ｂの粘度は１００Ｃ
ＰＳであった。A: 80% ethylene glycol monoethyl ether acetate, 13% ethylene glycol monoethyl ether
, toluene 7% B: ethylene glycol monoethyl ether acetate 60%, ethylene glycol monoethyl ether 10
%, toluene 25% The viscosity of A is 600 CPS and the viscosity of B is 100C
It was PS.
Ａでは、噴霧不良による表面の凹凸が見られた。In A, surface irregularities due to poor spraying were observed.
また、Ｂでは、乾燥速度が早く、吐出口附近に雲の果状
のレジストが生じ、レジスト膜への混入が認められた。In addition, in B, the drying speed was fast, and a cloud-like resist was formed near the discharge port, and it was observed that the resist was mixed into the resist film.
次に、溶剤組成をエチレングリコールモノエチルエーテ
ルアセテート７０％、エチレングリコールモノエチルエ
ーテル３０％、トルエン３０％、粘度４０ＣＰＳとして
実施例−２と同様な操作をした。Next, the same operation as in Example 2 was performed using a solvent composition of 70% ethylene glycol monoethyl ether acetate, 30% ethylene glycol monoethyl ether, 30% toluene, and a viscosity of 40 CPS.
この場合には、Ｂと同様に吐出口附近に雲の巣状のレジ
ストが生じ、レジスト膜への混入が認められたばかりか
、充分な厚さのレジスト膜は得られなかった。In this case, similar to B, a cloud of resist was formed near the discharge port, and not only was it observed to be mixed into the resist film, but a resist film of sufficient thickness could not be obtained.
［発明の効果コ
本発明の静電塗布用フォトレジスト組成物を用いれば、
１回の塗布で充分な厚みのレジスト膜が得られるため、
生産性の向上が可能となる。[Effects of the Invention] If the photoresist composition for electrostatic coating of the present invention is used,
A sufficiently thick resist film can be obtained with one coating, so
It becomes possible to improve productivity.
Claims (1)
１３０〜１６０℃の有機溶剤が７０〜８０容量％、残部
が沸点１００℃前後の有機溶剤からなる有機溶剤１００
部と、樹脂２０部以上とからなり、その粘度が１００〜
５００ＣＰＳであることを特徴とする静電塗布用フォト
レジスト組成物。Organic solvent 100 consisting of 5 to 15% by volume of an organic solvent with a boiling point of 180°C or higher, 70 to 80% by volume of an organic solvent with a boiling point of 130 to 160°C, and the balance consisting of an organic solvent with a boiling point of around 100°C
and 20 parts or more of resin, the viscosity of which is 100~
A photoresist composition for electrostatic coating, characterized in that it has a photoresist composition of 500 CPS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP153890A JPH03207769A (en) | 1990-01-10 | 1990-01-10 | Photoresist composition for electrostatic coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP153890A JPH03207769A (en) | 1990-01-10 | 1990-01-10 | Photoresist composition for electrostatic coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03207769A true JPH03207769A (en) | 1991-09-11 |
Family
ID=11504302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP153890A Pending JPH03207769A (en) | 1990-01-10 | 1990-01-10 | Photoresist composition for electrostatic coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03207769A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10429739B2 (en) | 2015-12-24 | 2019-10-01 | Shin-Etsu Chemical Co., Ltd. | Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process |
| US10444628B2 (en) * | 2015-12-24 | 2019-10-15 | Shin-Etsu Chemical Co., Ltd. | Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process |
-
1990
- 1990-01-10 JP JP153890A patent/JPH03207769A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10429739B2 (en) | 2015-12-24 | 2019-10-01 | Shin-Etsu Chemical Co., Ltd. | Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process |
| US10444628B2 (en) * | 2015-12-24 | 2019-10-15 | Shin-Etsu Chemical Co., Ltd. | Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process |
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