JPH03204931A - Removal of surface defect on semiconductor substrate - Google Patents
Removal of surface defect on semiconductor substrateInfo
- Publication number
- JPH03204931A JPH03204931A JP34415589A JP34415589A JPH03204931A JP H03204931 A JPH03204931 A JP H03204931A JP 34415589 A JP34415589 A JP 34415589A JP 34415589 A JP34415589 A JP 34415589A JP H03204931 A JPH03204931 A JP H03204931A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- epitaxial crystal
- crystal thin
- resin thin
- abnormal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 230000007547 defect Effects 0.000 title claims description 8
- 239000010409 thin film Substances 0.000 claims abstract description 68
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 230000002159 abnormal effect Effects 0.000 claims abstract description 28
- 239000011347 resin Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000002390 adhesive tape Substances 0.000 abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 7
- 238000003825 pressing Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体基板の表面欠陥除去方法に関し、更に詳
しくは、ウェハ表面にエピタキシャル結晶を成長せしめ
たとき、形成されたエピタキシャル結晶薄膜の表面に異
常突起として成長している欠陥を除去する方法に関する
。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for removing surface defects from a semiconductor substrate, and more specifically, when an epitaxial crystal is grown on a wafer surface, the surface of the formed epitaxial crystal thin film is removed. The present invention relates to a method for removing defects growing as abnormal protrusions.
（従来の技術） 電子機器等に組込まれる半導体素子は、Ｓｉ。(Conventional technology) Semiconductor elements incorporated into electronic devices and the like are made of Si.
ＧａＡｓ等の所定の半導体のバルク単結晶を所定の厚み
にスライスしてウェハとし、このウェハの表面に鏡面研
磨処理を施したのち、ここにウェハと同じ半導体の単結
晶をエピタキシャル成長せしめてエピタキシャル結晶薄
膜を形成し、このエピタキシャル結晶薄膜にホトリソグ
ラフィー技術やエツチング技術を適用して各種デバイス
を装荷して製造されている。A bulk single crystal of a given semiconductor such as GaAs is sliced to a given thickness to make a wafer, and the surface of this wafer is mirror-polished, and then a single crystal of the same semiconductor as the wafer is epitaxially grown to form an epitaxial crystal thin film. This epitaxial crystal thin film is then manufactured by applying photolithography and etching techniques to load various devices onto this epitaxial crystal thin film.
（発明が解決しようとする課題）
上記した一連の工程のうち、半導体ウェハの表面にエピ
タキシャル結晶薄膜を形成したとき、その薄膜の表面に
は、高さの異なるエピタキシャル結晶の柱状突起が異常
成長することがある。(Problems to be Solved by the Invention) When an epitaxial crystal thin film is formed on the surface of a semiconductor wafer in the series of steps described above, columnar protrusions of epitaxial crystals of different heights grow abnormally on the surface of the thin film. Sometimes.
このような異常突起のうち、高さの高いものは、エピタ
キシャル結晶薄膜形成後に行なうホトリソグラフィーの
工程で、例えば、エピタキシャル結晶薄膜の上に密着さ
れるマスクを突き破り、マスクの損傷や割れなどを起す
場合がある。そのため、高い異常突起が成長している半
導体基板は使用不可として不良品になっていた。Among these abnormal protrusions, tall ones can break through the mask that is tightly attached to the epitaxial crystal thin film during the photolithography process performed after the epitaxial crystal thin film is formed, causing damage or cracks to the mask. There are cases. As a result, semiconductor substrates on which tall abnormal protrusions have grown have been considered unusable and rejected.
本発明は、上記したようなエピタキシャル結晶薄膜表面
の異常突起を除去して、従来は不良品扱いされていた半
導体基板をも良品に転化することを可能にした半導体基
板の表面欠陥除去方法の提供を目的とする。The present invention provides a method for removing surface defects from a semiconductor substrate, which makes it possible to convert a semiconductor substrate that was conventionally treated as a defective product into a good product by removing abnormal protrusions on the surface of an epitaxial crystal thin film as described above. With the goal.
（課題を解決するための手段・作用）
上記した目的を達成するために、本発明においては、エ
ピタキシャル結晶薄膜が形成されている半導体基板の前
記エピタキシャル結晶薄膜の上に可撓性の樹脂薄膜を密
着して形成し、ついで樹脂薄膜の上から加圧力を印加し
たのち、前記樹脂薄膜を前記エピタキシャル結晶薄膜か
ら剥離して、前記エピタキシャル結晶薄膜の表面に存在
する異常突起の結晶欠陥を除去することを特徴とする半
導体基板の表面欠陥除去方法が提供される。(Means and effects for solving the problem) In order to achieve the above-mentioned object, in the present invention, a flexible resin thin film is provided on the epitaxial crystal thin film of the semiconductor substrate on which the epitaxial crystal thin film is formed. forming the resin thin film in close contact with each other, and then applying pressure from above the resin thin film, and then peeling the resin thin film from the epitaxial crystal thin film to remove crystal defects of abnormal protrusions existing on the surface of the epitaxial crystal thin film. Provided is a method for removing surface defects on a semiconductor substrate, characterized by the following.
本発明においては、まず、エピタキシャル結晶薄膜が形
成されている半導体基板の前記結晶薄膜の上に樹脂薄膜
が形成される。In the present invention, first, a resin thin film is formed on the crystal thin film of the semiconductor substrate on which the epitaxial crystal thin film is formed.
この樹脂薄膜の形成は、例えば、ホトリソグラフィーの
工程で使用されるホトレジストをエピタキシャル結晶薄
膜の上に所定の厚みでスピンコードして塗布したのち、
これを光照射または乾燥して可撓性を有する樹脂薄膜に
成膜する方法、表面保護用の樹脂をスプレーもしくはス
ピナーで塗布後、所定の条件で乾燥し、樹脂薄膜を成膜
する方法、または、所定の厚みの紫外線硬化型粘着テー
プをエピタキシャル結晶薄膜の上に貼着したのち、ここ
に紫外線を照射して硬化せしめる方法を適用して行なわ
れる。The formation of this resin thin film can be done, for example, by spin-coating a photoresist used in a photolithography process onto an epitaxial crystal thin film to a predetermined thickness, and then applying the photoresist to a predetermined thickness.
A method in which this is irradiated with light or dried to form a flexible resin thin film, a method in which a surface protection resin is applied with a spray or spinner and then dried under predetermined conditions to form a resin thin film, or This is done by applying a method in which an ultraviolet curable adhesive tape of a predetermined thickness is adhered onto the epitaxial crystal thin film and then irradiated with ultraviolet rays to cure the adhesive tape.
前者のホトレジストとしては、ホトリソグラフィー工程
で用いられるものであれば何であってもよいが、例えば
、ＡＺ１３５０Ｊ（商品名、ヘキストジャパン（掬製）
、レコパック（商品名、ナガオカ（掬製のポリビニルア
ルコールを主体とするもの）を好適なものとしてあげる
ことができる。また、紫外線硬化型粘着テープとしては
、例えば、ＵＶテープ（商品名、古河電気工業■製）を
あげることができる。The former photoresist may be of any type as long as it is used in the photolithography process, but for example, AZ1350J (trade name, manufactured by Hoechst Japan)
, Recopak (trade name, Nagaoka (made mainly from polyvinyl alcohol) is suitable. Also, as an ultraviolet curable adhesive tape, for example, UV tape (trade name, Furukawa Electric Co., Ltd.) is suitable. ■) can be given.
これらの感光性樹脂薄膜は、エピタキシャル結晶薄膜の
表面に存在する異常突起を略包み込む程度の厚みとなる
ように形成される。例えば、ホトレジストをスピンコー
ドする場合は、異常突起の高さに応じて、ホトレジスト
の粘度やスピナーの回転数を適宜に選定して、前記異常
突起を略包み込むような厚みでエピタキシャル結晶薄膜
の上に塗布すればよい。また紫外線硬化型粘着テープを
用いる場合は、異常突起の高さに対応して適切な厚みの
テープを用いればよい。These photosensitive resin thin films are formed to have a thickness that substantially covers abnormal protrusions present on the surface of the epitaxial crystal thin film. For example, when spin-coding photoresist, the viscosity of the photoresist and the rotation speed of the spinner are selected appropriately depending on the height of the abnormal protrusion, and the epitaxial crystal thin film is coated with a thickness that almost covers the abnormal protrusion. Just apply it. Furthermore, when using an ultraviolet curable adhesive tape, it is sufficient to use a tape with an appropriate thickness depending on the height of the abnormal protrusion.
このような処理によって、エピタキシャル結晶薄膜上の
異常突起は形成された感光性樹脂薄膜の膜厚部分の中に
固持された状態になる。Through such treatment, abnormal protrusions on the epitaxial crystal thin film are held firmly within the thick portion of the formed photosensitive resin thin film.
ついで、本発明においては、上記のように形成した感光
性樹脂薄膜の上に加圧力を印加する。Next, in the present invention, a pressing force is applied onto the photosensitive resin thin film formed as described above.
この処理により、異常突起は、上記加圧力によって生ず
る感光性樹脂薄膜の撓みによって、成長基部の付近から
折損する。折損した異常突起は、しかしながら、感光性
樹脂薄膜の膜厚部分σ中に固持されているので、基板の
表面に飛散して基板表面を損傷するという問題は起さな
い。Through this treatment, the abnormal protrusion is broken from near the growth base due to the deflection of the photosensitive resin thin film caused by the above-mentioned pressure. However, since the broken abnormal protrusions are firmly fixed in the thickness portion σ of the photosensitive resin thin film, there is no problem of them scattering onto the surface of the substrate and damaging the substrate surface.
このときに印加する加圧力は、異常突起の太さ、高さな
どの形態とそれに伴う強度との関係から適宜に決めれば
よい。また、加圧力の印加に際しては、感光性樹脂薄膜
の上から例えば金属製のローラを圧接しながら複数回往
復運動させることが、異常突起を完全に折損するという
点では好適である。The pressure applied at this time may be appropriately determined based on the relationship between the shape of the abnormal protrusion, such as its thickness and height, and its accompanying strength. In addition, when applying pressure, it is preferable to move a metal roller, for example, in pressure contact with the photosensitive resin thin film and reciprocate a plurality of times in order to completely break off the abnormal protrusion.
つぎに、感光性樹脂薄膜はエピタキシャル結晶薄膜から
剥離される。このことによって、折損され、感光性樹脂
薄膜の中に固持されている異常突起は前記感光性樹脂薄
膜と一緒にエピタキシャル結晶薄膜の表面から除去され
る。Next, the photosensitive resin thin film is peeled off from the epitaxial crystal thin film. As a result, the abnormal protrusions that are broken and held in the photosensitive resin thin film are removed from the surface of the epitaxial crystal thin film together with the photosensitive resin thin film.
したがって、エピタキシャル結晶薄膜の表面に存在して
いた異常突起はその成長基部から掃引されて表面から完
全に除去されるか、または異常突起がその途中から折損
した場合は高さの低い異常突起を残すのみとなる。Therefore, the abnormal protrusions that existed on the surface of the epitaxial crystal thin film are swept away from the growth base and are completely removed from the surface, or if the abnormal protrusions break off halfway, they leave abnormal protrusions with a low height. Only.
このようにして得られた半導体基板は、必要に応じて、
その表面の洗浄、乾燥の過程を経て、ホトリソグラフィ
ー工程に移送される。The semiconductor substrate obtained in this way can be
After the surface is cleaned and dried, it is transferred to a photolithography process.
（発明の実施例）
実施例Ｉ
Ｓｉ基板の上に形成されているエピタキシャルＳｉ単結
晶薄膜の表面の各点を観察して高さが７μｍ以上の異常
突起の数を測定した。ついで、この薄膜の上に、レコパ
ック（商品名、ナガオカ（掬製のレジスト）１−を滴下
し、２００Ｏｒｐｍで回転するスピナーで全面に塗布し
た。(Examples of the Invention) Example I Each point on the surface of an epitaxial Si single crystal thin film formed on a Si substrate was observed to measure the number of abnormal projections with a height of 7 μm or more. Next, Recopak (trade name, Nagaoka (resist made by Kiki) 1- was dropped onto this thin film and coated over the entire surface with a spinner rotating at 200 rpm.
その後、室温で１５分間放置して前記レジストを乾燥し
、厚みが１０８ｍのレジスト膜を形成した。Thereafter, the resist was allowed to stand for 15 minutes at room temperature to dry, thereby forming a resist film with a thickness of 108 m.
ついで、Ｓｉ基板の裏面を真空吸着台にセットしてＳｉ
基板を固定し、前記レジスト膜に１ｋｇ／ｃｒｉの圧力
で金属ローラを圧接して前記ローラを往復させた。Next, set the back side of the Si substrate on a vacuum suction table and
The substrate was fixed, a metal roller was brought into contact with the resist film at a pressure of 1 kg/cri, and the roller was moved back and forth.
ついで、レジスト膜に粘着テープを貼着して前記粘着テ
ープを引張ることにより、レジスト膜をＳｉ単結晶薄膜
の表面から剥離した。Next, an adhesive tape was attached to the resist film and the adhesive tape was pulled to peel the resist film from the surface of the Si single crystal thin film.
得られたＳｉ基板の表面における前記観察の各点を再び
観察して異常突起の個数と高さを測定した。その結果、
高さが７μｍ以上であった異常突起のうち、６４％に相
当するものはその高さが７μｍより低くなっていた。す
なわち、７μｍ以上の異常突起の６４％は７μｍより低
くなり、得られた基板は後段のホトリソグラフィー工程
に使用可能の状態になっていた。Each point on the surface of the obtained Si substrate was observed again to measure the number and height of abnormal protrusions. the result,
Of the abnormal protrusions with a height of 7 μm or more, 64% had a height lower than 7 μm. In other words, 64% of the abnormal protrusions with a diameter of 7 μm or more were smaller than 7 μm, and the obtained substrate was ready for use in the subsequent photolithography process.
なお、レジスト膜を剥離したのちのＳｉ単結晶薄膜の表
面につきＥＳＣＡ分析を行なったところ、その表面は不
純物で汚染されていないことが確認された。When the surface of the Si single crystal thin film was subjected to ESCA analysis after the resist film was peeled off, it was confirmed that the surface was not contaminated with impurities.
実施例２
実施例１で用いたＳｉ基板の表面に厚みが７０μｍのＵ
Ｖテープ（商品名、古河電気工業■製）を貼着し、その
上から１ｋｇ／ｃｊの圧力で金属ローラを往復させた。Example 2 U with a thickness of 70 μm was formed on the surface of the Si substrate used in Example 1.
A V-tape (trade name, manufactured by Furukawa Electric Co., Ltd.) was attached, and a metal roller was moved back and forth thereon with a pressure of 1 kg/cj.
ついで、ＵＶテープの上から紫外線を照射したのち、そ
れに粘着テープを貼着して引張り、ＵＶテープを剥離し
た。Next, after irradiating the UV tape with ultraviolet rays, an adhesive tape was attached thereto and pulled to peel off the UV tape.
高さが７μｍ以上であった異常突起は、その６０％が７
μｍより低くなった。また、ＵＶテープ剥離後、Ｓｉ基
板の表面をＳ ＩＭＳ分析したが、異常となる不純物は
検出されなかった。Of the abnormal protrusions with a height of 7 μm or more, 60%
It became lower than μm. Furthermore, after the UV tape was removed, the surface of the Si substrate was analyzed by SIMS, but no abnormal impurities were detected.
（発明の効果）
以上の説明で明らかなように、本発明方法によれば、エ
ピタキシャル結晶薄膜の表面に異常成長している突起を
簡単に除去することができ、その結果、ホトリソグラフ
ィー工程における密着型露光方式を採用した場合でも、
使用するマスクの損傷や割れを防止することができる。(Effects of the Invention) As is clear from the above explanation, according to the method of the present invention, abnormally growing protrusions on the surface of an epitaxial crystal thin film can be easily removed, and as a result, adhesion during the photolithography process can be easily removed. Even when using the type exposure method,
It is possible to prevent the mask used from being damaged or cracked.
したがって、本発明方法を採用することにより、従来は
不良品扱いになっていた半導体基板でも良品に転化する
ことができ、基板の付加価値は増大する。Therefore, by employing the method of the present invention, even semiconductor substrates that were conventionally treated as defective products can be converted into good products, increasing the added value of the substrates.
Claims (1)
前記エピタキシャル結晶薄膜の上に可撓性の樹脂薄膜を
密着して形成し、ついで樹脂薄膜の上から加圧力を印加
したのち、前記樹脂薄膜を前記エピタキシャル結晶薄膜
から剥離して、前記エピタキシャル結晶薄膜の表面に存
在する異常突起の結晶欠陥を除去することを特徴とする
半導体基板の表面欠陥除去方法。A flexible resin thin film is formed in close contact with the epitaxial crystal thin film of the semiconductor substrate on which the epitaxial crystal thin film is formed, and then pressure is applied from above the resin thin film, and then the resin thin film is attached to the epitaxial crystal thin film. A method for removing surface defects from a semiconductor substrate, comprising removing crystal defects of abnormal projections existing on the surface of the epitaxial crystal thin film by peeling the epitaxial thin film from the crystal thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34415589A JPH03204931A (en) | 1989-12-29 | 1989-12-29 | Removal of surface defect on semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34415589A JPH03204931A (en) | 1989-12-29 | 1989-12-29 | Removal of surface defect on semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03204931A true JPH03204931A (en) | 1991-09-06 |
Family
ID=18367061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34415589A Pending JPH03204931A (en) | 1989-12-29 | 1989-12-29 | Removal of surface defect on semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03204931A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04182067A (en) * | 1990-11-14 | 1992-06-29 | Hitachi Ltd | Method for coating semiconductor device with flux |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636127A (en) * | 1979-08-31 | 1981-04-09 | Fujitsu Ltd | Treatment of wafer-surface |
| JPS62112851A (en) * | 1985-11-13 | 1987-05-23 | 三井建設株式会社 | Concrete curtain wall and its production |
-
1989
- 1989-12-29 JP JP34415589A patent/JPH03204931A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636127A (en) * | 1979-08-31 | 1981-04-09 | Fujitsu Ltd | Treatment of wafer-surface |
| JPS62112851A (en) * | 1985-11-13 | 1987-05-23 | 三井建設株式会社 | Concrete curtain wall and its production |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04182067A (en) * | 1990-11-14 | 1992-06-29 | Hitachi Ltd | Method for coating semiconductor device with flux |
| JPH0739034B2 (en) * | 1990-11-14 | 1995-05-01 | 株式会社日立製作所 | Flux application method for semiconductor devices |
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