JPH03196006A - Semiconductor laser module - Google Patents
Semiconductor laser moduleInfo
- Publication number
- JPH03196006A JPH03196006A JP1337862A JP33786289A JPH03196006A JP H03196006 A JPH03196006 A JP H03196006A JP 1337862 A JP1337862 A JP 1337862A JP 33786289 A JP33786289 A JP 33786289A JP H03196006 A JPH03196006 A JP H03196006A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- optical fiber
- light emitting
- fiber
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 239000000835 fiber Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000013307 optical fiber Substances 0.000 abstract description 31
- 230000003287 optical effect Effects 0.000 abstract description 11
- 230000008878 coupling Effects 0.000 abstract description 9
- 238000010168 coupling process Methods 0.000 abstract description 9
- 238000005859 coupling reaction Methods 0.000 abstract description 9
- 239000011347 resin Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 5
- 238000005253 cladding Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体シー1ザと光ファイバを結合した半
導体レーザモジュールに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser module in which a semiconductor laser and an optical fiber are coupled.
第3図、第4図は従来の先端斜研磨ファイバと半導体光
素子の結合方法の一例を示すものである。FIGS. 3 and 4 show an example of a conventional method of coupling a fiber with an obliquely polished tip and a semiconductor optical device.
第3図、第4図において、1は半導体基板、2は下クラ
ッド層、3は活性層、4は上クラッド層、5はコンタク
ト層、6および7は電極、8は光出力を入射する先端斜
研磨ファイバ(以下、単に光ファイバという) 9は
光出力である。In FIGS. 3 and 4, 1 is a semiconductor substrate, 2 is a lower cladding layer, 3 is an active layer, 4 is an upper cladding layer, 5 is a contact layer, 6 and 7 are electrodes, and 8 is a tip into which light output is incident. An obliquely polished fiber (hereinafter simply referred to as an optical fiber) 9 is an optical output.
次に結合方法について説明する。Next, the combining method will be explained.
第3図は面発光LEDと光ファイバ8との結合を示し、
第4図は端面発光LEDと光ファイバ8との結合を示し
たものである。FIG. 3 shows the coupling between the surface emitting LED and the optical fiber 8,
FIG. 4 shows the coupling between the edge-emitting LED and the optical fiber 8.
これらの結合状態においては、発光領域から出射された
光出力9は、光ファイバ8の側面より入射し、45°程
度に研磨された端面で反射され、光ファイバ8のコアに
入射される。In these coupled states, the light output 9 emitted from the light emitting region enters the optical fiber 8 from the side surface, is reflected by the end face polished to about 45°, and enters the core of the optical fiber 8.
従来の半導体し〜ザと光ファイバ8との結合は、光出力
9を光ファイバ8のコア内に入射させるために光出力9
を光ファイバ8に入射しつつモニタし、光軸を合わせた
後、光ファイバ8をパッケージなどに固定する必要があ
った。光ファイバ8に限らず、その他のファイバ(バラ
1、カップリング。The conventional coupling between the semiconductor laser and the optical fiber 8 is such that the optical output 9 is input into the core of the optical fiber 8.
It was necessary to monitor the light while inputting it into the optical fiber 8, align the optical axis, and then fix the optical fiber 8 to a package or the like. Not limited to optical fiber 8, but also other fibers (loose 1, coupling.
球面ファイバを用いたカップリング等)の場合も同様の
工程で行われていた。A similar process was used for couplings using spherical fibers, etc.).
以上の工程は複雑で手間がかかる上、結合特性にバラツ
キが生じやすいなど問題点が多く、特にアレイ化された
光素子の結合には不向きであった。The above process is complicated and time-consuming, and has many problems such as the possibility of variations in coupling characteristics, and is particularly unsuitable for coupling optical elements arranged in an array.
この発明は、上記のような問題点を解決するためになさ
れたもので、光軸合せの必要のない結合が可能な半導体
レーザモジュールを得ることを目的とする。The present invention was made in order to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor laser module that can be coupled without the need for optical axis alignment.
この発明に係る半導体レーザモジュールは、発光領域の
一方の側の光出射端面となる穴または溝を半導体基板に
形成し、この穴または溝に先端斜研磨ファイバを挿入し
、光出射端面からの出力光が先端斜研磨ファイバ内に入
射されるように固定したものである。In the semiconductor laser module according to the present invention, a hole or a groove serving as a light emitting end face on one side of a light emitting region is formed in a semiconductor substrate, a beveled tip polished fiber is inserted into the hole or groove, and an output from the light emitting end face is formed. The fiber is fixed so that light enters the fiber with an obliquely polished tip.
この発明における半導体レーザモジュールは、レーザの
光出射端面に接する穴または溝中に先端斜研磨ファイバ
を直接挿入したことにより、光出射端面からの光出力は
光軸合わせをすることなく先端斜研磨ファイバに入射さ
れろ。The semiconductor laser module of the present invention has an obliquely polished fiber tip inserted directly into the hole or groove in contact with the light emitting end surface of the laser, so that the optical output from the light emitting end surface is transmitted through the obliquely polished fiber tip without optical axis alignment. Be injected into.
以下、この発明の実施例を図面について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第1図はこの発明の一実施例を示す断面図である。この
図において、第3図2第4図と同一符号は同一構成部分
を示し、1oは半導体発光素子の前記活性層3に接する
ように形成された穴で、この穴10内に光ファイバ8が
挿入され、半導体発光素子の光出射端面からの出力光が
入射される最適位置に固定される。11゛はそのための
樹脂である。また、12はヒートシンクを示す。FIG. 1 is a sectional view showing an embodiment of the present invention. In this figure, the same reference numerals as those in FIG. 3, FIG. 4, and FIG. The semiconductor light emitting element is inserted and fixed at an optimum position where output light from the light emitting end face of the semiconductor light emitting element is incident. 11 is a resin for that purpose. Further, 12 indicates a heat sink.
次に動作について説明する。Next, the operation will be explained.
ジャンクジフンダウンに組み立てられたレーザの半導体
基板1には、直径がファイバ径よりやや大きく (数μ
m程度大きい)、ストライプ状の活性層3に接し、スト
ライプの延長線上に中心のある穴10が形成されている
。この穴10の中には、光ファイバ8が先端斜研磨面と
反対方向の側面をレーザの光出射端面に対向して樹脂1
1で固定されている。活性層3で発した光出力は、光出
射端面より出力され、光ファイバ8の側面より光フアイ
バ8内に入射し、45°程度に研磨された斜面で反射さ
れ、光ファイバ8の軸に平行な方向に光フアイバ8内を
伝搬する。上記のモジュール化の工程において、あらか
じめ光出力が光ファイバ8の中心部分に入射されるよう
に層厚および電極厚を設定することによって光ファイバ
8を穴10の中に差込み、樹脂11で固定するのみの工
程で光ファイバ8と半導体レーザの結合が可能となる。The semiconductor substrate 1 of the laser assembled in a junkyard has a diameter slightly larger than the fiber diameter (several microns).
A hole 10 is formed in contact with the striped active layer 3 and whose center is on an extension of the stripe. In this hole 10, an optical fiber 8 is placed with a resin 1, with the side surface opposite to the obliquely polished tip surface facing the light emitting end surface of the laser.
It is fixed at 1. The light output emitted from the active layer 3 is output from the light emitting end face, enters the optical fiber 8 from the side surface of the optical fiber 8, is reflected by the slope polished to about 45 degrees, and is parallel to the axis of the optical fiber 8. The light propagates within the optical fiber 8 in a certain direction. In the above modularization process, the layer thickness and electrode thickness are set in advance so that the light output is incident on the center part of the optical fiber 8, and the optical fiber 8 is inserted into the hole 10 and fixed with the resin 11. It becomes possible to couple the optical fiber 8 and the semiconductor laser with only a few steps.
上記の実施例において、半導体レーザの電極6の表面か
ら活性層3までの距離は一般的には〜8μm程度である
。一方、現在−船釣に使用されている光ファイバの直径
は125μmである。乙のため、直径が125μmの光
ファイバ8を用いた場合、レーザ光を光ファイバの中心
に入射させるためには、活性層3から電極6の表面まで
の距離を62.5μmと大きくする必要があり、極端に
厚いコンタク)・層5または電極6を形成する必要があ
る。In the above embodiment, the distance from the surface of the electrode 6 of the semiconductor laser to the active layer 3 is generally about 8 μm. On the other hand, the diameter of the optical fiber currently used for boat fishing is 125 μm. For B, when using an optical fiber 8 with a diameter of 125 μm, the distance from the active layer 3 to the surface of the electrode 6 must be as large as 62.5 μm in order to make the laser beam enter the center of the optical fiber. layer 5 or electrode 6 (extremely thick contact layer 5 or electrode 6).
第2図はこの発明の他の実施例を示す断面図で、光ファ
イバ8の先端部分を研磨し、コアに垂直な方向に平坦化
したものを適用した場合を示すものである。なお、第2
図中の第1図と同一符号は同一構成部分を示す。FIG. 2 is a sectional view showing another embodiment of the present invention, in which the tip of the optical fiber 8 is polished and flattened in a direction perpendicular to the core. In addition, the second
The same reference numerals in the figure as in FIG. 1 indicate the same components.
また、と−トシンク12に穴10を形成し、光ファイバ
8の先端部分を半導体基板1を通してヒートシンク12
の穴10に挿入して、位置合わせを行ってもよい。Also, a hole 10 is formed in the heat sink 12, and the tip of the optical fiber 8 is passed through the semiconductor substrate 1 into the heat sink 12.
The positioning may be performed by inserting it into the hole 10 of.
以上の方法によれば、コンタクト層などを厚くする必要
なく結合が可能となる。According to the above method, bonding is possible without the need to thicken the contact layer or the like.
なお、上記実施例では半導体レーザをジャンクションダ
ウンに組み立てた場合について説明したが、ジャンクシ
ョンアップに半導体レーザを組立て、表面から光ファイ
バ8を挿入しても同様に適用できることは言うまでもな
い。このときは穴10は貫通孔でなくてよい。また、上
記実施例では穴10を形成して光ファイバ8を結合させ
たが、溝を形成し光ファイバを結合させてもよい。In the above embodiment, a case has been described in which the semiconductor laser is assembled in a junction-down manner, but it goes without saying that the same application is possible even if the semiconductor laser is assembled in a junction-up manner and the optical fiber 8 is inserted from the surface. In this case, the hole 10 does not have to be a through hole. Further, in the above embodiment, the optical fibers 8 are coupled by forming the holes 10, but grooves may be formed and the optical fibers are coupled.
以上説明したように、乙の発明は、発光領域の一方の側
の光出射端面となるような穴または溝を半導体基板に形
成し、この穴または溝に先端斜研磨ファイバを挿入し、
光出射端面からの出力光が先端斜研磨ファイバ内に入射
されるように固定したので、先端斜研磨ファイバの光軸
合わせを必要とせず、簡単な方法で半導体レーザと先端
斜研磨ファイバとの結合を行うことができる。As explained above, the invention of B forms a hole or a groove in a semiconductor substrate to serve as a light emitting end face on one side of a light emitting region, inserts an obliquely polished fiber into the hole or groove,
Since the output light from the light emitting end face is fixed so as to enter into the obliquely polished fiber, there is no need to align the optical axis of the obliquely polished fiber, making it possible to couple the semiconductor laser and the obliquely polished fiber in a simple manner. It can be performed.
第1図はこの発明の一実施例を示す半導体レーザモジュ
ールの断面図、第2図はこの発明の他の実施例を示す断
面図、第3図、第4図は従来の半導体レーザと先端斜研
磨ファイバとの結合を示す断面図である。
図において、1は半導体基板、2は下クラ・ンド層、3
は活性層、4は上クラッド層、5はコンタクト層、6お
よび7は電極、8は先端斜研磨ファイバ、9は光出力、
10は穴、11は樹II、12はヒートンツクである。
なお、各図中の同一符号は同一または相当部分を示す。
第
図
]1 宿脂
12 レート〕きりFIG. 1 is a sectional view of a semiconductor laser module showing one embodiment of the present invention, FIG. 2 is a sectional view showing another embodiment of the invention, and FIGS. FIG. 3 is a cross-sectional view showing the connection with a polished fiber. In the figure, 1 is a semiconductor substrate, 2 is a lower crystal layer, and 3 is a semiconductor substrate.
is an active layer, 4 is an upper cladding layer, 5 is a contact layer, 6 and 7 are electrodes, 8 is an obliquely polished tip fiber, 9 is an optical output,
10 is a hole, 11 is a tree II, and 12 is a heat hole. Note that the same reference numerals in each figure indicate the same or corresponding parts. Diagram] 1 fat 12 rate] cut
Claims (1)
、前記発光領域の一方の側の光出射端面となる穴または
溝を半導体基板に形成し、この穴または溝に先端斜研磨
ファイバを挿入し、前記光出射端面からの出力光が前記
先端斜研磨ファイバ内に入射されるように固定したこと
を特徴とする半導体レーザモジュール。In a semiconductor laser having a striped light emitting region, a hole or a groove serving as a light emitting end face on one side of the light emitting region is formed in the semiconductor substrate, a beveled tip polished fiber is inserted into the hole or groove, and the light emitting end face is formed on one side of the light emitting region. 1. A semiconductor laser module, wherein the semiconductor laser module is fixed so that output light from the end face is input into the obliquely polished fiber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1337862A JPH03196006A (en) | 1989-12-25 | 1989-12-25 | Semiconductor laser module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1337862A JPH03196006A (en) | 1989-12-25 | 1989-12-25 | Semiconductor laser module |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03196006A true JPH03196006A (en) | 1991-08-27 |
Family
ID=18312688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1337862A Pending JPH03196006A (en) | 1989-12-25 | 1989-12-25 | Semiconductor laser module |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03196006A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022043211A1 (en) * | 2020-08-25 | 2022-03-03 | Osram Opto Semiconductors Gmbh | Method for producing a radiation-emitting semiconductor chip, and radiation-emitting semiconductor chip |
-
1989
- 1989-12-25 JP JP1337862A patent/JPH03196006A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022043211A1 (en) * | 2020-08-25 | 2022-03-03 | Osram Opto Semiconductors Gmbh | Method for producing a radiation-emitting semiconductor chip, and radiation-emitting semiconductor chip |
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