JPH03183780A - Device for producing semiconductor - Google Patents
Device for producing semiconductorInfo
- Publication number
- JPH03183780A JPH03183780A JP32453489A JP32453489A JPH03183780A JP H03183780 A JPH03183780 A JP H03183780A JP 32453489 A JP32453489 A JP 32453489A JP 32453489 A JP32453489 A JP 32453489A JP H03183780 A JPH03183780 A JP H03183780A
- Authority
- JP
- Japan
- Prior art keywords
- pipeline
- pipe
- pipelines
- trap
- branch point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 9
- 239000007787 solid Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
Landscapes
- Filtering Of Dispersed Particles In Gases (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体製造装置に係わbl特にCVD装置に
釦ける配管系の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, and particularly to the structure of a piping system connected to a CVD equipment.
第2図は従来のCVD装置における配管系の構成を示す
図である。同図にかいて、1は配管であう、この配管1
の途中にはトラップ3を有する配管部4が設けられて>
、6、ポンプ側の配管6へ連結されている。FIG. 2 is a diagram showing the configuration of a piping system in a conventional CVD apparatus. In the same figure, 1 is a pipe, this pipe 1
A piping section 4 having a trap 3 is provided in the middle of the
, 6, connected to piping 6 on the pump side.
このような構成において、配管1を通過したガスや固体
状物質などのうち、爵体状物質は、配管部4を通過する
際にトラップ3に捕えられてこのトラップ3に溜る。こ
れによってポンプ内への固体状物質の流入を防止させて
いる。そして、配管6にはガス状物質のみが流れ、ポン
プを汚さないようになる。In such a configuration, among the gases, solid substances, and the like that have passed through the pipe 1 , the solid substances are captured by the trap 3 and accumulated in the trap 3 when passing through the pipe section 4 . This prevents solid substances from flowing into the pump. Then, only gaseous substances flow through the pipe 6, preventing the pump from becoming contaminated.
しかしながら、従来の半導体製造装置は、トラップ3内
に固体状物質が溜すすぎると、配管部4を詰らせ配管前
での圧力が高く々つでしまうという問題があった。また
、この溜った固体状物質を取り除くためには半導体製造
装置の駆動を停止しなければならないという問題があっ
た。However, the conventional semiconductor manufacturing apparatus has a problem in that if too much solid material accumulates in the trap 3, the piping section 4 is clogged and the pressure in front of the piping becomes high and fluctuating. Furthermore, there is a problem in that the driving of the semiconductor manufacturing equipment must be stopped in order to remove the accumulated solid material.
この発明は、上記従来の課題を解決するためになされた
ものであり1配管前の圧力の変化を防ぐとともに装置を
使用しながら、トラップの洗浄ができる半導体製造装置
を得ることを目的としている。The present invention has been made to solve the above-mentioned conventional problems, and aims to provide a semiconductor manufacturing apparatus that can prevent pressure changes in front of one pipe and can clean traps while using the apparatus.
この発明に係る半導体製造装置は、配管の一部を複数に
分岐させ、この複数本の配管生金てにトラップを設ける
とともにこの複数本のうちの1本を常に使用し、他の配
管との切シ換えが可能な切換手段を設けたものである。In the semiconductor manufacturing equipment according to the present invention, a part of the piping is branched into a plurality of pipes, a trap is provided in the plurality of pipes, and one of the plurality of pipes is always used, and it is connected to other pipes. It is equipped with a switching means that can be switched.
この発明における複数本に分かれた配管は、1本の配管
中のトラップの目詰シ前に切換手段によシ他方と切り換
えることによう、配管前の部分での急な圧力上昇を防ぎ
、筐九−本の配管を使用中に他方の配管のネットに溜っ
たものを取り除けるので、半導体製造装置を止める必要
がなくなる。In this invention, the pipes are divided into a plurality of pipes, so that before the traps in one pipe become clogged, the switching means is used to switch to the other pipe, thereby preventing a sudden pressure rise in the front part of the pipe, and While the nine pipes are in use, the material accumulated in the net of the other pipe can be removed, so there is no need to stop the semiconductor manufacturing equipment.
以下、この発明の実施例を図面を用いて詳細に説明する
。Embodiments of the present invention will be described in detail below with reference to the drawings.
第1図はこの発明による半導体製造装置の一実施例を示
す要部構成図であシ、上述の図と同一部分には同一符号
を付しである。同図において、配管1は、その一部が分
岐点2から二叉に分岐されこの分岐された各配管11.
1zにはそれぞれトラップ3が配管部4内に収容されて
結合されるとともに配管6も同様に一部が分岐点5から
二叉に分岐され、この分岐された各配管61,6zにそ
れぞれ連結されている。また、配管10分岐点2および
配管60分岐点5には流路を切シ換えるそれぞれパルプ
71および7雪が設けられ、これらのバルブ?r 、7
2の一方向、他方向への切シ換えによ多分岐された配管
のうち、いずれか一方を使用する。FIG. 1 is a block diagram showing the main parts of an embodiment of a semiconductor manufacturing apparatus according to the present invention, and the same parts as in the above-mentioned figures are given the same reference numerals. In the figure, a part of a pipe 1 is branched into two from a branch point 2, and each branched pipe 11.
A trap 3 is accommodated in a piping section 4 and connected to each of the traps 1z, and a portion of the piping 6 is similarly branched into two forks from a branch point 5, and connected to each of the branched pipings 61 and 6z, respectively. ing. In addition, pulps 71 and 7 are provided at branch point 2 of the pipe 10 and branch point 5 of the pipe 60, respectively, to switch the flow paths, and these valves ? r, 7
2. Either one of the multi-branched piping is used by switching between one direction and the other direction.
このよう碌構成において、配管1を通過したガスや固体
状物質は、分岐点2で配v4に流れ込む。In such a structure, the gas or solid substance that has passed through the pipe 1 flows into the pipe v4 at the branch point 2.
このとき、バルブ71は一箇所のみが開いているので、
ガスや固体状物質はパルプTIの開いている配管401
本へのみ流れ込む。そして、配管4内にあるトラップ3
によって固体状物質は捕えられ、配管の分岐点5を通っ
て配管6を流れる際にはガスのみと女b1その後のポン
プへのダメージを軽減させている。この際、トラップ3
へは次第に固体状物質が溜b1最後には配管を詰らせ、
配管前での圧力が漸次高くなってし筐うが、トラップ3
が詰る前にバルブ7t 、 7zを切シ換え・その間に
溜った固体状物質を除去することができるので、トラッ
プ3を詰らせることがなく、圧力の変化を防ぐことがで
きる。筐た、一方の配管を使用中に他方の配管を洗浄で
きるので、炉を使用しながら、配管を洗浄できる。At this time, only one part of the valve 71 is open, so
For gases and solid substances, use Pulp TI's open pipe 401
It only flows into the book. And the trap 3 inside the pipe 4
The solid substance is captured by the pipe, and when it flows through the pipe 6 through the branch point 5 of the pipe, only the gas remains and the subsequent damage to the pump is reduced. At this time, trap 3
Solid substances gradually accumulate in b1, eventually clogging the pipes,
The pressure in front of the pipe gradually increases, but trap 3
Since the valves 7t and 7z can be switched and the solid substances accumulated between them can be removed before the trap 3 becomes clogged, pressure changes can be prevented without clogging the trap 3. Since one pipe can be cleaned while the other pipe is in use, the pipe can be cleaned while the furnace is in use.
なお、上述した実施例にかいては、分岐される配管を2
本としfc場合について説明したが、本発明はこれに限
定されるものではなく、2本以上伺本でも良いことは言
う1でもない。In addition, in the above-mentioned embodiment, there are two pipes to be branched.
Although the description has been made regarding the case where the fc is a book, the present invention is not limited to this, and it is also possible to use two or more books.
以上説明したようにこの発明によれば、配管を複数にし
たので、配管の詰りによる圧力変動を起こすこともなく
、炉を使用しながら、配管を洗浄することが可能となる
という効果がある。As explained above, according to the present invention, since there are a plurality of pipes, there is an effect that the pipes can be cleaned while using the furnace without causing pressure fluctuations due to clogging of the pipes.
第1図はこの発明の一実施例による半導体製造装置を示
す断面図、第2図は従来の半導体製造装置を示す断面図
である。
1.11,12 ・O#・配管、2・・・・分岐点、3
11@1111)ラップ、4・・・・配管、5・・・・
パルプ。
代
理
人
大
岩
増
雄FIG. 1 is a sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor manufacturing apparatus. 1.11,12 ・O#・Piping, 2... Branch point, 3
11@1111) Wrap, 4... Piping, 5...
pulp. Agent Masuo Oiwa
Claims (1)
の配管内にトラツプを設けるとともに該分岐点に流路の
切り換え手段を設けたことを特徴とする半導体製造装置
。1. A semiconductor manufacturing apparatus, characterized in that a part of a pipe is divided into a plurality of pipes and branched, a trap is provided in the plurality of branched pipes, and a flow path switching means is provided at the branch point.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32453489A JPH03183780A (en) | 1989-12-13 | 1989-12-13 | Device for producing semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32453489A JPH03183780A (en) | 1989-12-13 | 1989-12-13 | Device for producing semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03183780A true JPH03183780A (en) | 1991-08-09 |
Family
ID=18166875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32453489A Pending JPH03183780A (en) | 1989-12-13 | 1989-12-13 | Device for producing semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03183780A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09187612A (en) * | 1995-10-31 | 1997-07-22 | Takasago Thermal Eng Co Ltd | Gaseous impurity treating system and particle removing filter |
-
1989
- 1989-12-13 JP JP32453489A patent/JPH03183780A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09187612A (en) * | 1995-10-31 | 1997-07-22 | Takasago Thermal Eng Co Ltd | Gaseous impurity treating system and particle removing filter |
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