JPH03179787A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPH03179787A JPH03179787A JP1318165A JP31816589A JPH03179787A JP H03179787 A JPH03179787 A JP H03179787A JP 1318165 A JP1318165 A JP 1318165A JP 31816589 A JP31816589 A JP 31816589A JP H03179787 A JPH03179787 A JP H03179787A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- light
- emitted
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004907 flux Effects 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は発光ダイオードに係り、特に、赤外領域の発光
ダイオードに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a light emitting diode, and particularly to an infrared light emitting diode.
従魚 一部の発光ダイオード、特に赤外領域の発光ダイ
オードにおいて１九 発光ダイオードチップより放射さ
れた光束を効率よく、フォトダイオード、フォトトラン
ジスタ等の受光素子を有する受光器に接続するため、レ
ンズキャンと呼ばれるパッケージを用い、光束を絞るよ
うにしている。19. In some light emitting diodes, especially those in the infrared region, a lens can is used to efficiently connect the luminous flux emitted from the light emitting diode chip to a light receiver having a light receiving element such as a photodiode or phototransistor. It uses a package called ``1'' to narrow down the luminous flux.
しかしながら、上記の装置にょれ１！、レンズ部を形成
する際に、円筒状ガラスを加熱溶融によって接着後形状
出しを行っているため、レンズ部の外形寸法にばらつき
が大きく、焦点距離等の変動を生じ易いものでありら
一方、上記レンズキャンと呼ばれるパッケージを用いた
装置の問題点を解決する目的で、例え１！、特開昭６２
−１３９３６７号公報では、プラスチックにより形成さ
れたレンズ部を有する発光ダイオードが提案されている
。However, the above device is wrong! When forming the lens part, the cylindrical glass is heated and melted to form the shape after bonding, so the external dimensions of the lens part vary widely and the focal length etc. tend to fluctuate. For the purpose of solving the problems of the device using the package called Lenscan mentioned above, for example 1! , JP-A-62
Japanese Patent No. 139367 proposes a light emitting diode having a lens portion made of plastic.
しかしながら、上記の提案では、レンズ部の入射面を発
光ダイオードチップを点光源とみな獣曲率中心とする球
面形状とし 該レンズ部の射出面を楕円面または放物面
としているため、光軸上の発光点に対しては、良好な平
行光束が得られるものの、発光ダイオードチップが２次
元における有限な大きさを有するため、軸外の発光点に
対しては、必ずしも効果的な解決法にはなり得ない。However, in the above proposal, the entrance surface of the lens section is made into a spherical shape with the center of curvature considering the light emitting diode chip as a point light source, and the exit surface of the lens section is made into an ellipsoid or paraboloid. Although good parallel light flux can be obtained for light-emitting points, it is not necessarily an effective solution for off-axis light-emitting points because the light-emitting diode chip has a finite size in two dimensions. I don't get it.
本発明は、上記問題点を解決するため番λ 以下のよう
な手段をとっ九
本発明は、レンズ部付き外囲器内に発光ダイオードチッ
プを有する発光ダイオードにおいて、前記発光ダイオー
ドチップは２次元の発光面を有し、前記レンズ部の入射
面と射出面と１気 前記２次元発光面から出た光が入射
面を経て射出面から出る際、平行光束を射出する関係に
形成しムここで、前記入射面（転
（Ｘ Ａ） ２＋Ｙ２＝１／ｃ、２ （１）
但し Ｃ１： 曲率（ｍｍ”）
Ａ９曲車中心のＸ座標
で表される形状で形成さ札
前記射出面取
但し
Ｃ２： 中心曲率（ｍ ｍ −’ ）
Ｋ ：円錐定数、
Ｅ ：定数
に≠−１のとき
に＊０
Ｋ＝−１のとき
Ｅ＝Ｂ
ここで、Ｂは楕円の中心のＸ圧機
また１も 放物面の頂点のＸ座標
で表される形状で形成される力ｌ その際、入射面、射
出面の形状を選択するにあたり、前記発光点が光軸上の
場合と、光軸外の場合について光線追跡を行い、最終的
な射出角カー 平均的に平行光になるようにする。In order to solve the above-mentioned problems, the present invention takes the following measures.The present invention provides a light emitting diode having a light emitting diode chip in an envelope with a lens part, in which the light emitting diode chip has a two-dimensional shape. The lens unit has a light emitting surface, and is formed in such a relationship that when the light emitted from the two-dimensional light emitting surface passes through the entrance surface and exits from the exit surface, a parallel luminous flux is emitted. , the incident plane (translation (X A) 2+Y2=1/c, 2 (1)
However, C1: Curvature (mm") A9 The injection chamfer is formed in the shape represented by the X coordinate of the center of the curved wheel. However, C2: Center curvature (mm -') K: Conic constant, E: Constant ≠ - When 1, *0 When K=-1, E=B Here, B is the X pressure force at the center of the ellipse, and 1 is also the force l formed by the shape expressed by the X coordinate of the vertex of the paraboloid. When selecting the shapes of the entrance surface and the exit surface, ray tracing is performed for when the light emitting point is on the optical axis and when it is off the optical axis, and the final exit angle curve is adjusted so that the light becomes parallel on average. do.
本発明で１４ 発光ダイオードチップは点光源ではな
く、２次元の発光面を有することを、前提として、レン
ズ部の設計を行ったものであり、より理想的な平行光を
射出面がら得ることができる。In the present invention, the lens section is designed on the premise that the light emitting diode chip has a two-dimensional light emitting surface rather than a point light source, and it is possible to obtain more ideal parallel light from the exit surface. can.
第１図は、本発明にかかる発光ダイオードの断面図であ
る。この図に示されるよう＆へ 発光ダイオードチップ
１を円板状のステム２上にダイボンディングし 金線３
により外部電極４にワイヤーボンディングしである。FIG. 1 is a cross-sectional view of a light emitting diode according to the present invention. As shown in this figure, a light emitting diode chip 1 is die-bonded onto a disk-shaped stem 2, and a gold wire 3 is attached.
This is the wire bonding to the external electrode 4.
一方、レンズ部６及び胴部７が一体成形されたプラスチ
ック製外囲器５を用意する。これは、レンズ部６の周囲
に円筒状胴部７を垂下させた形状である。On the other hand, a plastic envelope 5 in which a lens portion 6 and a body portion 7 are integrally molded is prepared. This has a shape in which a cylindrical body part 7 is suspended around a lens part 6.
ここで、発光ダイオードチップ１が搭載されたステム２
を、前記胴部７の下端に取り付ける。この際、外部電極
４に通電し、発光ダイオードを発光させ、射出光が平行
光束になるように位置合わせする。Here, a stem 2 on which a light emitting diode chip 1 is mounted
is attached to the lower end of the body section 7. At this time, the external electrode 4 is energized to cause the light emitting diode to emit light, and the positions are adjusted so that the emitted light becomes a parallel beam of light.
このように構成することにより、プラスチックレンズ部
６を通過した光束は、平行であるため効率の高い光源と
して利用できる。With this configuration, the light beam passing through the plastic lens portion 6 is parallel, so it can be used as a highly efficient light source.
また、外囲器５を構成するレンズ部６と胴部７はプラス
チックにより一体成形されるため、従来のレンズキャン
に比べその製造が容易であり、しかもステム２との組立
調整が簡単に行える。Further, since the lens portion 6 and the body portion 7 constituting the envelope 5 are integrally molded from plastic, they are easier to manufacture than conventional lens cans, and assembly and adjustment with the stem 2 can be easily performed.
一方、本実施例の発光ダイオードのレンズ部６の形状に
ついて、第２図を参照しながら説明する。On the other hand, the shape of the lens portion 6 of the light emitting diode of this example will be explained with reference to FIG.
レンズ部６の入射面６ａと射出面６ｂとは、前記２次元
発光面である発光ダイオードチップ１から出た光が入射
面６ａを経て射出面６ｂがら出る際、平行光束を射出す
る関係に設計し九
本実施例において（九 既存の発光ダイオードとの寸法
差をできる限り小さくするため＆；Ｄ、＝２． ０ｍｍ
（発光ダイオードチップとレンズ部入射面６ａの距
離）
Ｄ ２ ＝ ２． ８ ｍ ｍ （し：／ ス部（１
） 厚ミ）と １− また、
Ｎ、＝１．５３（レンズ材料の屈折率）Ｎ２＝１
（空気中の屈折率）
という条件で設計し九
また、入射面６ａは次の（１）
面形状とした
（Ｘ−Ａ）２＋Ｙ２＝ｌ／Ｃ１２
但し Ｃ１： 曲率（ｍｍ−１）
Ａ： 曲率中心のＸ座標
一方、射出面６ｂは次の（２）
円形状または放物面形状とし氾
式で示される球
（１）
式で示される楕
但し
Ｃ２： 中心曲率（ｍ ｍ引）
Ｋ ：円錐定数、Ｋ≠Ｏ
Ｅ ：定数
に≠−１のとき
に＝−１のとき
Ｅ＝Ｂ
ここで、Ｂは楕円の中心のＸ座凍
また１転 放物面の頂点のＸ座標
以上において、入射面６ ａｌ 射出面６ｂは各々屈
折力を有し 入射面６ａにおける入射角θ、と射出角θ
、。の関係は、
Ｎ２５ｉｎθＩ＋ ””ＮＩ ９１ ｎθ、。The entrance surface 6a and the exit surface 6b of the lens section 6 are designed in a relationship such that when the light emitted from the light emitting diode chip 1, which is the two-dimensional light emitting surface, passes through the entrance surface 6a and exits from the exit surface 6b, a parallel beam is emitted. In this embodiment, (9) In order to minimize the dimensional difference with existing light emitting diodes, &;D, = 2.0 mm.
(Distance between the light emitting diode chip and the lens portion entrance surface 6a) D 2 = 2. 8 mm (shi: / s part (1
) Thickness M) and 1- Also, N, = 1.53 (refractive index of lens material) N2 = 1
(Refractive index in air) In addition, the entrance surface 6a has the following (1) surface shape (X-A)2+Y2=l/C12 where C1: curvature (mm-1) A: curvature The X coordinate of the center On the other hand, the exit surface 6b is as follows: (2) A sphere with a circular or parabolic shape and expressed by the flood formula (1) An ellipse expressed by the formula where C2: Center curvature (m minus m) K: Cone Constant, K≠O E: When constant ≠ -1, when = -1, E = B. Here, B is the Surface 6 al Each of the exit surfaces 6b has a refractive power, and the incident angle θ at the entrance surface 6a and the exit angle θ
,. The relationship is: N25inθI+ ””NI 91 nθ,.
また、射出面６ｂにおける入射角θ２．と射出角θ２゜
の関係１丸
Ｎ、ｓｉｎθ、＝Ｎ２ｓｉｎθ２゜
と表される（スネルの法則）。Furthermore, the incident angle θ2. The relationship between and the exit angle θ2° is expressed as 1 circle N, sin θ, = N2 sin θ2° (Snell's law).
従って、このスネルの法則を満たす関係志 および各光
線とレンズ部６の交点との関係式により、光線追跡を行
うことにより、最終的な射出光線の角度ａが求められる
。この角度ａは光軸と光線がなす角である。Therefore, by tracing the rays using the relationship that satisfies Snell's law and the relational expression between each ray and the intersection of the lens portion 6, the final angle a of the emitted ray can be found. This angle a is the angle between the optical axis and the light beam.
ところで、発光ダイオードチップ１１４２次元の有限な
大きさを有するため、実際の発光部１４光軸上の一点の
みではなく、軸外にまで広がっている。このことを第３
図を参照しながら説明する。By the way, since the light emitting diode chip 114 has a finite size of two dimensions, the light emitting section 14 actually extends not only at one point on the optical axis but also beyond the axis. This is the third
This will be explained with reference to the figures.
発光ダイオードチップｌは、光軸外にまで広がる２次元
の有限な大きさを有している。従って光軸上の点Ａから
射出される光線と、光軸外の点Ｂから射出される光線は
、レンズ部６の入射面６ａの同一点Ｃに入射しても、各
々の入射角θ。１とθＩｌｌが異なるため、射出光のレ
ンズ部６の射出面６ｂ上の位置Ａ′Ｂ’ および射出角
θ、。、θ８゜が異なる。このとき、最終的な射出光線
の角度α９、ａＢ も変化する。The light emitting diode chip l has a two-dimensional finite size that extends beyond the optical axis. Therefore, even if the light ray emitted from point A on the optical axis and the light ray emitted from point B off the optical axis are incident on the same point C on the entrance surface 6a of the lens section 6, their respective incident angles θ will be different. Since 1 and θIll are different, the position A'B' of the emitted light on the exit surface 6b of the lens portion 6 and the exit angle θ. , θ8° are different. At this time, the final angle α9, aB of the emitted light beam also changes.
従って、該レンズ部６の形状を決定するにあたってＩＬ
発光ダイオードチップｌの大きさを勘案し 発光点
が光軸上の場合と、光軸外の場合について考慮した光線
追跡を行い、最終的な射出角が、平均的に平行光になる
ようにしら この場合、平均的と示した意味は 必ずし
も算術平均という意味には限定されず、発光点の位置に
より、重み付けがなされても良い。Therefore, when determining the shape of the lens portion 6, the IL
Taking into consideration the size of the light emitting diode chip l, ray tracing is carried out taking into account cases where the light emitting point is on the optical axis and cases where it is off the optical axis, and the final emission angle is made to be parallel light on average. In this case, the meaning of "average" is not necessarily limited to the meaning of arithmetic average, and weighting may be done depending on the position of the light emitting point.
決定された該レンズ部６の形状＋４ 入射面６ａの曲
率が
ｃ、＝０． １ （ｍｍ−＋）
であり、射出面６ｂの中心曲率が
ｃ２＝０． ５１５ （ｍｍ−１）
円錐定数か
に＝−０，４５
である。The determined shape of the lens portion 6+4 The curvature of the entrance surface 6a is c, =0. 1 (mm-+), and the central curvature of the exit surface 6b is c2=0. 515 (mm-1) Conic constant = -0.45.
尚、本発明は上記実施例に限定されるものではなく、本
発明の主旨に基づいて種々の変更が可能であり、これら
を本発明の範囲から除外するものではない。It should be noted that the present invention is not limited to the above embodiments, and various modifications can be made based on the gist of the present invention, and these are not excluded from the scope of the present invention.
本発明によれ（ｆｌ 発光ダイオードチップが点光源
ではなく２次元の大きさを有していることを前提として
、レンズ部の射出面から射出される光が平行となるよう
に設計したため、光軸上の発光点はもちろム 発光ダイ
オードチップ全体の発光点にわたり、レンズ部を通過し
た光束は、収束または発散することなく、平行に射出す
ることができる。According to the present invention (fl) Assuming that the light emitting diode chip is not a point light source but has a two-dimensional size, it is designed so that the light emitted from the exit surface of the lens part is parallel. The luminous flux passing through the lens part can be emitted in parallel over the entire luminous point of the light emitting diode chip without converging or diverging.
第１図は本発明にかかる発光ダイオードの断面は 第２
図は本発明にかかる発光ダイオードの一部をなすレンズ
部の説明は 第３図は発光ダイオードチップの発光点の
違いにより光線追跡結果が異なることを示す模式図であ
る。FIG. 1 shows a cross section of a light emitting diode according to the present invention.
The figure shows an explanation of a lens portion that forms a part of the light emitting diode according to the present invention. FIG. 3 is a schematic diagram showing that the ray tracing results differ depending on the light emitting point of the light emitting diode chip.
Claims (3)
有する発光ダイオードにおいて、前記発光ダイオードチ
ップは２次元の発光面を有し、前記レンズ部の入射面と
射出面とは、前記２次元発光面から出た光が入射面を経
て射出面から出る際、平行光束を射出する関係に形成し
てあることを特徴とする発光ダイオード。(1) In a light emitting diode having a light emitting diode chip in an envelope with a lens part, the light emitting diode chip has a two-dimensional light emitting surface, and the entrance surface and the exit surface of the lens part are the two-dimensional light emitting surface. A light emitting diode characterized in that the light emitted from the surface is formed in such a relationship that a parallel beam of light is emitted when the light exits from the exit surface after passing through the entrance surface.
しｃ＿１：曲率（ｍｍ＾−＾１） Ａ：曲率中心のＸ座標 で表される形状で、 前記射出面が Ｘ＝｛ｃ＿２＾２Ｙ＾２｝／｛１＋√〔１−（Ｋ＋１）
ｃ＿２＾２Ｙ＾２〕｝＋Ｅ（２）但しｃ＿２：中心曲率
（ｍｍ＾−＾１） Ｋ：円錐定数Ｋ≠０ Ｅ：定数 Ｋ≠−１のとき Ｅ＝Ｂ−１／｛（Ｋ＋１）ｃ＿２｝ Ｋ＝−１のとき Ｅ＝Ｂ ここで、Ｂは楕円の中心のＸ座標 または、放物面の頂点のＸ座標 で表される形状である請求項１項記載の発光ダイオード
。(2) The incident surface is (X-A)^2+Y^2=1/(c_1^2) (1) where c_1: curvature (mm^-^1) A: shape expressed by the X coordinate of the center of curvature So, the exit surface is X={c_2^2Y^2}/{1+√[1-(K+1)
c_2＾2Y＾2]}+E(2) However, c_2: Center curvature (mm＾-＾1) K: Conic constant K≠0 E: When constant K≠-1, E=B-1/{(K+1)c_2 } When K=-1, E=B. The light emitting diode according to claim 1, wherein B is a shape represented by the X coordinate of the center of an ellipse or the X coordinate of the vertex of a paraboloid.
）であり、前記射出面の中心曲率ｃ＿２が０．５１５（
ｍｍ＾−＾１）、及び、前記射出面の円錐定数Ｋが−０
．４５である請求項２項記載の発光ダイオード。(3) The curvature c_1 of the incident surface is 0.1 (mm^-^1
), and the central curvature c_2 of the exit surface is 0.515 (
mm^-^1) and the conic constant K of the exit surface is -0
．． 4. The light emitting diode according to claim 2, wherein the light emitting diode has a diameter of 45.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1318165A JPH03179787A (en) | 1989-12-07 | 1989-12-07 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1318165A JPH03179787A (en) | 1989-12-07 | 1989-12-07 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03179787A true JPH03179787A (en) | 1991-08-05 |
Family
ID=18096199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1318165A Pending JPH03179787A (en) | 1989-12-07 | 1989-12-07 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03179787A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5428227A (en) * | 1993-03-17 | 1995-06-27 | Ricoh Company, Ltd. | Semiconductor light emitting element |
| US5841177A (en) * | 1993-06-25 | 1998-11-24 | Kabushiki Kaisha Toshiba | Multicolor light emitting device |
| JP2006060254A (en) * | 2005-10-31 | 2006-03-02 | Nichia Chem Ind Ltd | Light emitting diode |
| JP5338900B2 (en) * | 2009-03-30 | 2013-11-13 | 株式会社オートネットワーク技術研究所 | Optical communication module and method for manufacturing optical communication module |
-
1989
- 1989-12-07 JP JP1318165A patent/JPH03179787A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5428227A (en) * | 1993-03-17 | 1995-06-27 | Ricoh Company, Ltd. | Semiconductor light emitting element |
| US5841177A (en) * | 1993-06-25 | 1998-11-24 | Kabushiki Kaisha Toshiba | Multicolor light emitting device |
| JP2006060254A (en) * | 2005-10-31 | 2006-03-02 | Nichia Chem Ind Ltd | Light emitting diode |
| JP5338900B2 (en) * | 2009-03-30 | 2013-11-13 | 株式会社オートネットワーク技術研究所 | Optical communication module and method for manufacturing optical communication module |
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