JPH03177562A - Vaporization source device - Google Patents

Vaporization source device

Info

Publication number
JPH03177562A
JPH03177562A JP31560089A JP31560089A JPH03177562A JP H03177562 A JPH03177562 A JP H03177562A JP 31560089 A JP31560089 A JP 31560089A JP 31560089 A JP31560089 A JP 31560089A JP H03177562 A JPH03177562 A JP H03177562A
Authority
JP
Japan
Prior art keywords
crucible
small hole
heating
filament
source device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31560089A
Other languages
Japanese (ja)
Inventor
Fumitoshi Nishiwaki
文俊 西脇
Yasushi Nakagiri
康司 中桐
Yoshiaki Yamamoto
義明 山本
Hiroyoshi Tanaka
博由 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP31560089A priority Critical patent/JPH03177562A/en
Publication of JPH03177562A publication Critical patent/JPH03177562A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To heat the upper part of a crucible with a coil and to prevent the clogging of a small hole for injecting a vaporized material by providing the coil close to the small hole at the upper part of the crucible in a vapor deposition device and connecting the coil and crucible and an electron-bombardment hot cathode for heating the coil to a power source in series. CONSTITUTION:A material 3 to be vapor-deposited is placed into the crucible A made of C or W, the electron-bombardment hot cathode 5 provided around the crucible A is energized by the power source 6 to emit a thermoelectron which heats the crucible A, hence the material 3 is vaporized, and the vapor of the material 3 is injected from the small hole 1 of the upper lid 2 of the crucible A and deposited on a substrate. In this case, the small hole 1 and upper lid 2 are cooled by the adiabatic expansion due to the injection of the vapor from the small hole of the upper lid 2, the vapor of the material 3 is solidified, and the small hole 1 is clogged. Accordingly, a heating filament 4 is arranged close to the small hole 2, connected to the power source 7 in series with the crucible A and heated, and the upper part of the crucible and the small hole 1 are heated by the heat. As a result, the material is not solidified in the small hole, and the vapor deposition is not stopped.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は真空蒸着、クラスタイオンビーム蒸着等に用い
られる蒸発源装置の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to improvements in evaporation source devices used in vacuum evaporation, cluster ion beam evaporation, and the like.

従来の技術 従来、常温で固体状の物質を加熱蒸発させ蒸着基板上に
蒸着して薄膜の形成を行う真空蒸着、クラスタイオンビ
ーム蒸着等に用いる蒸着源装置は、第3図に示すような
構成を有していたすなわち、小孔21を上122の中央
部に形成した円筒状の坩堝(クヌーセンセル)23と、
坩堝23の外側に坩堝23の側周面と平行に設置してこ
の側周面を加熱するための電子ボンバード用熱陰極5か
らI戒されている。
2. Description of the Related Art Conventionally, a deposition source device used for vacuum evaporation, cluster ion beam evaporation, etc., in which a solid substance is heated and evaporated at room temperature and deposited on a deposition substrate to form a thin film, has a configuration as shown in FIG. That is, a cylindrical crucible (Knudsen cell) 23 with a small hole 21 formed in the center of the upper part 122;
The hot cathode 5 for electron bombardment is installed outside the crucible 23 parallel to the side circumferential surface of the crucible 23 to heat this side circumferential surface.

坩堝23はカーボン、タングステン等の単層構造を有す
るものが一般的である。電子ボンバード用熱陰極5はタ
ングステン、タンタル等の断面積が一様で均質な線材を
コイル状に成形したものであり、螺旋ピッチは一定であ
る。6は熱陰極5に電圧を印加しこれを加熱するための
熱陰極加熱用電源、24は坩堝23と熱陰極5の間に電
圧を印加して高温に加熱した熱陰極5から熱電子を引き
出し、その熱電子を坩堝23に衝突させることにより坩
堝23を電子ボンバード加熱するための坩堝加熱用電源
である。
The crucible 23 generally has a single-layer structure made of carbon, tungsten, or the like. The hot cathode 5 for electron bombardment is formed by forming a homogeneous wire material such as tungsten or tantalum with a uniform cross-sectional area into a coil shape, and the helical pitch is constant. 6 is a hot cathode heating power source for applying a voltage to the hot cathode 5 and heating it; 24 is a hot cathode heating power source for applying a voltage between the crucible 23 and the hot cathode 5 to extract thermoelectrons from the hot cathode 5 heated to a high temperature; , is a crucible heating power source for heating the crucible 23 by electron bombardment by colliding the thermoelectrons with the crucible 23.

前記蒸発源装置による製膜プロセスは次のようになる。The film forming process using the evaporation source device is as follows.

坩堝23の内部に蒸着材料3を収容した後、坩堝23を
設置した真空槽(図示せず)を所定の真空度に設定し、
坩堝23を電子ボンバード加熱して蒸着材料3を蒸発さ
せる。この蒸着材料3の蒸気25は真空槽と坩堝内部の
圧力差により小孔21から図中矢印方向に噴出し、この
際断熱膨張し過冷却される。このため蒸気25は凝縮し
、500〜2000個の原子が互いに緩く結合した塊状
原子集団のビームすなわちクラスタビームとなって基板
(図示せず)に衝突し、蒸着膜が作製される。
After accommodating the vapor deposition material 3 inside the crucible 23, a vacuum chamber (not shown) in which the crucible 23 was installed is set to a predetermined degree of vacuum,
The crucible 23 is heated by electron bombardment to evaporate the deposition material 3. The vapor 25 of the vapor deposition material 3 is ejected from the small hole 21 in the direction of the arrow in the figure due to the pressure difference between the vacuum chamber and the crucible, and at this time it expands adiabatically and is supercooled. Therefore, the vapor 25 is condensed and becomes a beam of a lumpy atomic group in which 500 to 2000 atoms are loosely bonded to each other, that is, a cluster beam, which collides with a substrate (not shown) to form a deposited film.

発明が解決しようとする課題 前述のように、坩堝23の外側に坩堝23の側周面と平
行に設置された電子ボンバード用熱陰極コイル5は線径
が一様で均質な線材を一様な螺旋ピッチでコイル状に成
形したものであり、従来の蒸発源装置は坩堝23の側面
を電子ボンバード用熱陰極5により一様な熱流束で加熱
するものである。
Problems to be Solved by the Invention As mentioned above, the hot cathode coil 5 for electron bombardment, which is installed outside the crucible 23 in parallel with the side circumferential surface of the crucible 23, has a uniform wire diameter and a uniform wire. It is formed into a coil shape with a helical pitch, and the conventional evaporation source device heats the side surface of the crucible 23 with a uniform heat flux using the hot cathode 5 for electron bombardment.

このため坩堝23の上部は中央部と同し熱入力である。Therefore, the upper part of the crucible 23 receives the same heat input as the central part.

しかし、円筒状の坩堝23には円形状の上面部(坩堝蓋
22)が存在するため、坩堝中央部と比較して上部から
の放熱量は大きくなる。
However, since the cylindrical crucible 23 has a circular upper surface portion (crucible lid 22), the amount of heat dissipated from the upper portion is larger than from the central portion of the crucible.

したがって、坩堝23の軸方向に沿って温度分布が生じ
、坩堝中央部で温度が高く、坩堝122を含む上部で温
度が低下することになる。このため、 (1)坩堝上面部の小孔付近の温度が低下し、蒸着材料
の蒸気が小孔付近で凝縮し、その凝集液が滴状で噴き出
すスピッティング状態を生じ易い。そのため、蒸着膜が
膜質不良となり、小孔が閉塞する。
Therefore, a temperature distribution occurs along the axial direction of the crucible 23, with the temperature being high at the center of the crucible and decreasing at the upper part including the crucible 122. For this reason, (1) the temperature near the small hole in the upper surface of the crucible decreases, the vapor of the vapor deposition material condenses near the small hole, and a spitting state in which the condensed liquid is spouted out in the form of droplets tends to occur. As a result, the quality of the deposited film becomes poor and the small pores become clogged.

(2)坩堝内に収容した蒸着材料の量すなわち蒸着材料
の充填高さによって蒸着材料の温度が変化し、蒸発速度
が一様でなく蒸着速度も変化する。そのため蒸着の安定
性が悪い。
(2) The temperature of the evaporation material changes depending on the amount of evaporation material accommodated in the crucible, that is, the filling height of the evaporation material, and the evaporation rate is not uniform and the evaporation rate also changes. Therefore, the stability of vapor deposition is poor.

等の問題点があった。There were problems such as.

本発明は、上記問題点に鑑みてなされたもので、坩堝の
軸方向に沿った温度分布を一様化することにより、高品
質の蒸着膜が安定して作製できる蒸発源装置を提供する
ことを目的とするものである。
The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide an evaporation source device that can stably produce a high-quality vapor deposited film by uniformizing the temperature distribution along the axial direction of a crucible. The purpose is to

課題を解決するための手段 本発明による蒸発源装置は、蒸発させる物質を収容する
坩堝と前記坩堝の側周面を加熱するための電子ボンバー
ド用熱陰極を具備し、前記坩堝の上蓋に小孔を有する蒸
発源装置において、坩堝と電気的直列で配列した加熱用
フィラメントを上蓋の小孔に近接して設けたものである
作用 上記のような構成によって得られる作用は次の通りであ
る。
Means for Solving the Problems An evaporation source device according to the present invention includes a crucible that accommodates a substance to be evaporated, a hot cathode for electron bombardment for heating the side circumferential surface of the crucible, and a small hole in the upper lid of the crucible. In the evaporation source device having a heating filament arranged in electrical series with the crucible, the heating filament is provided close to the small hole in the upper lid.The effects obtained by the above-described configuration are as follows.

真空中で高温に加熱された熱陰極に対して正電位にある
陽極(坩堝に相当する)を設置した場合、熱陰極から引
き出された熱電子は坩堝に衝突し、坩堝は電子ボンバー
ド加熱される。坩堝の上蓋に形成した小孔に近接して加
熱用フィラメントを設け、かつ加熱用フィラメントを坩
堝と電気的に直列に配列した場合、熱電子による工業ツ
シaン電流は加熱用フィラメントを流れることになり、
加熱用フィラメントは高温となる。この加熱フィラメン
トからの熱輻射により坩堝の上蓋に形成した小孔は加熱
される。
When an anode (corresponding to a crucible) at a positive potential is placed against a hot cathode heated to a high temperature in a vacuum, thermionic electrons extracted from the hot cathode collide with the crucible, and the crucible is heated by electron bombardment. . If a heating filament is provided close to the small hole formed in the upper lid of the crucible, and the heating filament is electrically arranged in series with the crucible, the industrial current due to thermionic electrons will flow through the heating filament. Become,
The heating filament becomes hot. The small hole formed in the upper lid of the crucible is heated by thermal radiation from this heating filament.

以上のことから、坩堝内部の蒸気が断熱膨張しながら噴
出する小孔部の温度低下は補償され、坩堝の温度分布は
軸方向に一様化する。その結果、スピッティング状態が
生じにくくなり、高品質の製膜が可能となる。また、小
孔が閉塞することもなくなり、安定した製膜が可能とな
る。
From the above, the temperature drop in the small hole where the steam inside the crucible ejects while expanding adiabatically is compensated for, and the temperature distribution in the crucible becomes uniform in the axial direction. As a result, a spitting state is less likely to occur, making it possible to form a high-quality film. In addition, small pores are not blocked, and stable film formation becomes possible.

実施例 以下に本発明の蒸発源装置を添付図面に基づいて説明す
る。第1図は本発明の一実施の舊発源装置を示す。Aは
直径1mm程度の小孔1.1を上M2上のニカ所に形成
したカーボン製の単層構造を有する坩堝(クヌーセンセ
ル)であり、この坩堝Aの内部に蒸着材料3を収容する
EXAMPLES The evaporation source device of the present invention will be described below with reference to the accompanying drawings. FIG. 1 shows a power source device according to one embodiment of the present invention. A is a crucible (Knudsen cell) made of carbon and having a single layer structure in which small holes 1.1 with a diameter of about 1 mm are formed at two locations on the upper M2, and the vapor deposition material 3 is housed inside this crucible A.

本実施例では、加熱用フィラメントとして小孔部近傍加
熱用フィラメント4を、一方の小孔1から坩堝Aの内部
に挿通し、他方の小孔1から坩堝Aの外部に引き出して
いる。なお、小孔部近傍加熱用フィラメント4は上蓋2
に接触しないように保持する。また、小孔部近傍加熱用
フィラメント4は、線径が0 、08mmの均質なタン
グステンの線材で製作している。そして、小孔部近傍加
熱用フィラメント4を坩堝Aと電気的に直列に配列し、
坩堝Aに衝突する熱電子によるエミッション電流が小孔
部近傍加熱用フィラメント4を流れる構成としている。
In this embodiment, a small hole heating filament 4 as a heating filament is inserted into the crucible A through one small hole 1 and pulled out from the crucible A through the other small hole 1. Note that the filament 4 for heating near the small hole is attached to the upper lid 2.
Hold it so that it does not come into contact with it. The filament 4 for heating near the small hole is made of a homogeneous tungsten wire with a wire diameter of 0.08 mm. Then, the filament 4 for heating near the small hole is electrically arranged in series with the crucible A,
The structure is such that an emission current due to thermionic electrons colliding with the crucible A flows through the heating filament 4 near the small hole.

例えば、約iAの工業ツション電流が上記の小孔部近傍
加熱用フィラメント4を流れた場合、小孔部近傍加熱用
フィラメント4の温度は約2200°Cとなる。
For example, when an industrial tension current of about iA flows through the filament 4 for heating near the small hole, the temperature of the filament 4 for heating near the small hole becomes about 2200°C.

5は前記坩堝Aを加熱するための電子ボンバード用熱陰
極である。電子ボンバード用熱陰極5は線径が0.7〜
1,0mm範囲で−様な線径のタングステン線もしくは
タンタル線を−様な螺旋径でコイル状に成形したもので
あり、コイルの長さは坩堝への長さより長くしている。
5 is a hot cathode for electron bombardment for heating the crucible A. The wire diameter of the hot cathode 5 for electron bombardment is 0.7~
Tungsten wires or tantalum wires with varying wire diameters in the range of 1.0 mm are formed into coils with varying helical diameters, and the length of the coil is longer than the length to the crucible.

線径が−様であるため、熱陰極5の温度はその長さ方向
に一定である。そして、この熱陰極5を2本電気的に直
列につなぎ、円筒型の坩堝Aの中心軸と平行にして坩堝
への外側に設置している。
Since the wire diameter is -like, the temperature of the hot cathode 5 is constant in its length direction. Two hot cathodes 5 are electrically connected in series and placed parallel to the central axis of the cylindrical crucible A on the outside of the crucible.

なお、直列につなぐ熱陰極5の数を増加させることによ
り、容易に坩堝Aへの熱入力を増加させることができる
Note that the heat input to the crucible A can be easily increased by increasing the number of hot cathodes 5 connected in series.

6は熱陰極5に電圧を印加しこれを加熱するための熱陰
極加熱用電源、7は坩堝Aと熱陰極5の間に電圧を印加
して高温に加熱された熱陰極5から熱電子を引き出し、
その熱電子を坩堝Aに衝突させることにより坩堝Aを電
子ボンバード加熱するための坩堝加熱用電源である。ま
た、この坩堝加熱用電源7により、熱電子によるエミッ
ション電流が小孔部近傍加熱用フィラメント4を流れる
ことになり、小孔部近傍加熱用フィラメント4は高温と
なる。また、8は坩堝Aを支持する支持台、9は前記支
持台8を真空槽(図示せず)に固定する絶縁支持部材で
ある。
6 is a hot cathode heating power source for applying a voltage to the hot cathode 5 and heating it; 7 is a hot cathode heating power source for applying a voltage between the crucible A and the hot cathode 5 to emit thermoelectrons from the hot cathode 5 heated to a high temperature; drawer,
This is a crucible heating power source for heating the crucible A by electron bombardment by colliding the thermoelectrons with the crucible A. Further, due to this crucible heating power source 7, an emission current due to thermoelectrons flows through the filament 4 for heating near the small hole, and the filament 4 for heating near the small hole becomes high temperature. Further, 8 is a support stand that supports the crucible A, and 9 is an insulating support member that fixes the support stand 8 to a vacuum chamber (not shown).

前述のように、坩堝Aの上蓋2に形成した小孔1.1に
挿通する小孔部近傍加熱用フィラメント4が高温になる
ため、この小孔部近傍加熱用フィラメント4からの熱輻
射により、坩堝Aの上M2に形成した小孔1、■の近傍
は加熱される。
As mentioned above, since the small hole heating filament 4 inserted into the small hole 1.1 formed in the upper lid 2 of the crucible A becomes high temperature, the heat radiation from the small hole heating filament 4 causes The vicinity of the small hole 1 and (2) formed in the upper M2 of the crucible A is heated.

以上のことから、坩堝A内部の蒸気が断熱膨張しながら
噴出する小孔1部の温度低下は補償され、坩堝Aの温度
分布は軸方向に一様化する。その結果、スピッティング
状態が生じにくくなり、高品質の製膜が可能となる。ま
た、小孔1が閉塞することもなくなり、安定した製膜が
可能となる。
From the above, the temperature drop in the first part of the small hole where the steam inside the crucible A blows out while expanding adiabatically is compensated for, and the temperature distribution in the crucible A becomes uniform in the axial direction. As a result, a spitting state is less likely to occur, making it possible to form a high-quality film. Further, the small holes 1 are not blocked, and stable film formation becomes possible.

さらに、本実施例によれば、坩堝への上面近傍にその面
を加熱するためのヒータもしくは熱陰極とそのための専
用電源を設けた場合と比較して、別途電源が不要であり
、そのため、装置構成が簡単でありコンパクトな蒸発源
装置とすることが可能となる。
Furthermore, according to this embodiment, a separate power source is not required compared to a case where a heater or a hot cathode for heating the surface of the crucible and a dedicated power source are provided near the top surface of the crucible. It is possible to provide a compact evaporation source device with a simple configuration.

なお、前記実施例では、タングステン、タンタル等の線
材を−様な螺旋径でコイル状に成形した電子ボンバード
用熱陰極の場合を示したが、タンタル、黒鉛等のリボン
状板材を短冊状もしくは螺旋状に成形した電子ボンバー
ド用熱陰極の場合にも通用できる。
In the above example, a hot cathode for electron bombardment was shown in which a wire material such as tungsten or tantalum was formed into a coil shape with a spiral diameter of -. It can also be used in the case of a hot cathode for electron bombardment formed into a shape.

第2図は本発明の他の実施例の蒸発源装置を示す。Bは
直径2mm程度の小孔10を上IEIIの中央部に形成
したカーボン製の単層構造を有する坩堝(クヌーセンセ
ル)であり、この坩堝Bの内部に蒸着材料3を収容する
。本実施例では、加熱用フィラメントとして坩堝上面加
熱用フィラメント12を、坩堝Bの小孔10の上方に設
けている。なお、坩堝上面加熱用フィラメント12は上
M11に接触しないように保持している。また、坩堝上
面加熱用フィラメント12は線径が0.081TI11
で均質なタングステンの線材をコイル状に成形したもの
である。そして、坩堝上面加熱用フィラメント12を坩
堝Bと電気的に直列に配列し、坩堝Bに衝突する熱電子
によるエミッシゴン電流が坩堝上面加熱用フィラメント
12を流れる構成としている。
FIG. 2 shows an evaporation source device according to another embodiment of the present invention. B is a crucible (Knudsen cell) made of carbon and having a single layer structure in which a small hole 10 with a diameter of about 2 mm is formed in the center of the upper IEII, and the vapor deposition material 3 is housed inside this crucible B. In this embodiment, a filament 12 for heating the upper surface of the crucible is provided above the small hole 10 of the crucible B as a heating filament. Note that the filament 12 for heating the upper surface of the crucible is held so as not to come into contact with the upper M11. In addition, the filament 12 for heating the top surface of the crucible has a wire diameter of 0.081TI11.
A homogeneous tungsten wire rod is formed into a coil shape. The filament 12 for heating the crucible top surface is electrically arranged in series with the crucible B, and an emissive current caused by thermionic electrons colliding with the crucible B flows through the filament 12 for heating the crucible top surface.

前記のような構成により、坩堝Bの小孔10の上方に設
けた坩堝上面加熱用フィラメント12は高温となり、こ
の坩堝上面加熱用フィラメント12からの輻射により坩
堝Bの上蓋11全面が加熱される。
With the above configuration, the filament 12 for heating the crucible top surface provided above the small hole 10 of the crucible B becomes high temperature, and the entire surface of the top lid 11 of the crucible B is heated by radiation from the filament 12 for heating the crucible top surface.

以上のことから、坩堝B内部の蒸気が断熱膨張しながら
噴出する小孔部の温度低下は補償される。その結果、ス
ピッティング状態が生じにくくなり、また小孔10が閉
塞することもなくなり、高品質の安定した製膜が可能と
なる。
From the above, the temperature drop in the small hole where the steam inside the crucible B blows out while expanding adiabatically is compensated for. As a result, the spitting state is less likely to occur, and the small holes 10 are also prevented from being blocked, making it possible to form a high-quality and stable film.

発明の効果 以上のように本発明による蒸発源装置は、蒸発させる物
質を収容する坩堝と前記坩堝の側周面を加熱するための
電子ボンバード用熱陰極を具備し、前記坩堝の上蓋に小
孔を有する蒸発源装置であって、坩堝と電気的直列で配
列した加熱用フィラメントを上蓋の小孔を加熱する位置
に設けたものであるため、別途加熱電源が不要であり、
しかもスピッティング状態が生じにくくなって、高品質
の安定した蒸着膜の作製が可能となる。
Effects of the Invention As described above, the evaporation source device according to the present invention includes a crucible that accommodates a substance to be evaporated, a hot cathode for electron bombardment for heating the side peripheral surface of the crucible, and a small hole in the upper lid of the crucible. This evaporation source device has a heating filament arranged in electrical series with the crucible at a position that heats the small hole in the top lid, so there is no need for a separate heating power source.
Moreover, the spitting state is less likely to occur, making it possible to produce a stable vapor deposited film of high quality.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の蒸発源装置の説明図、第2
図は本発明の他の実施例の蒸発源装置の説明図、第3図
は従来の蒸発源装置の説明図である。 A、B−・−・−坩堝 1、lO−・−・−・小孔 2.11・・−・−・・・−上蓋
FIG. 1 is an explanatory diagram of an evaporation source device according to an embodiment of the present invention, and FIG.
The figure is an explanatory diagram of an evaporation source device according to another embodiment of the present invention, and FIG. 3 is an explanatory diagram of a conventional evaporation source device. A, B-・--・-Crucible 1, lO-・--・Small hole 2.11--Top lid

Claims (3)

【特許請求の範囲】[Claims] (1)蒸発させる物質を収容する坩堝と前記坩堝の側周
面を加熱するための電子ボンバード用熱陰極とを具備し
、前記坩堝の上蓋に小孔を有する蒸発源装置において、
坩堝と電気的直列で配列した加熱用フィラメントを上蓋
の小孔を加熱する位置に設けた蒸発源装置。
(1) An evaporation source device comprising a crucible containing a substance to be evaporated and a hot cathode for electron bombardment for heating a side peripheral surface of the crucible, and having a small hole in the upper lid of the crucible,
An evaporation source device with a heating filament arranged in electrical series with the crucible at a position that heats a small hole in the top lid.
(2)加熱用フィラメントが、小孔に挿通されて上蓋に
U字状に貫設された小孔部近傍加熱用フィラメントであ
る請求項1記載の蒸発源装置。
(2) The evaporation source device according to claim 1, wherein the heating filament is a filament for heating near the small hole, which is inserted through the small hole and provided in a U-shape through the upper lid.
(3)加熱用フィラメントが、坩堝の小孔上方に配置し
た坩堝上面加熱用フィラメントである請求項1記載の蒸
発源装置。
(3) The evaporation source device according to claim 1, wherein the heating filament is a crucible upper surface heating filament disposed above the small hole of the crucible.
JP31560089A 1989-12-04 1989-12-04 Vaporization source device Pending JPH03177562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31560089A JPH03177562A (en) 1989-12-04 1989-12-04 Vaporization source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31560089A JPH03177562A (en) 1989-12-04 1989-12-04 Vaporization source device

Publications (1)

Publication Number Publication Date
JPH03177562A true JPH03177562A (en) 1991-08-01

Family

ID=18067303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31560089A Pending JPH03177562A (en) 1989-12-04 1989-12-04 Vaporization source device

Country Status (1)

Country Link
JP (1) JPH03177562A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030043088A (en) * 2001-11-27 2003-06-02 (주)알파플러스 The heating method of crucible for effusion cell
JP2004091926A (en) * 2002-09-03 2004-03-25 Samsung Nec Mobile Display Co Ltd Heating vessel in organic thin film deposition system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030043088A (en) * 2001-11-27 2003-06-02 (주)알파플러스 The heating method of crucible for effusion cell
JP2004091926A (en) * 2002-09-03 2004-03-25 Samsung Nec Mobile Display Co Ltd Heating vessel in organic thin film deposition system
US7962016B2 (en) 2002-09-03 2011-06-14 Samsung Mobile Display Co., Ltd. Heating crucible for organic thin film forming apparatus

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