JPH03173483A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH03173483A JPH03173483A JP1313664A JP31366489A JPH03173483A JP H03173483 A JPH03173483 A JP H03173483A JP 1313664 A JP1313664 A JP 1313664A JP 31366489 A JP31366489 A JP 31366489A JP H03173483 A JPH03173483 A JP H03173483A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- insulating film
- phototransistor
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052681 coesite Inorganic materials 0.000 abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 229910052682 stishovite Inorganic materials 0.000 abstract description 7
- 229910052905 tridymite Inorganic materials 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
透明な絶縁膜を介して発光素子と受光素子を接続する工
程を含む半導体装置の製造方法に関し、アイソレータの
歩留りを向上するとともに、量産性を可能にすることを
目的とし、
発光素子の周囲に透明な第一の絶縁膜を形成する工程と
、受光素子の周囲を透明な第二の絶縁ｌ々により覆う工
程と、前記発光素子の発光面とｎｉｌ記受光受光素子光
面とを対向させて、前記第一の絶縁膜と前記第二の絶縁
膜とを貼合わせる工程と、前記第一の絶縁膜と前記第二
の絶縁膜とを貼り合わせた後に、前記発光素子と前記受
光素子とにより挟まれた領域以外の１１ゴ記第−の絶縁
膜と前記第二の絶縁膜を除去する工程とを含み構成する
。[Detailed Description of the Invention] [Summary] A method for manufacturing a semiconductor device including a step of connecting a light emitting element and a light receiving element through a transparent insulating film, which improves the yield of isolators and enables mass production. A step of forming a transparent first insulating film around the light emitting element, a step of covering the periphery of the light receiving element with a transparent second insulating film, and a step of forming a transparent first insulating film around the light emitting element and a nil mark on the light emitting surface of the light emitting element. a step of bonding the first insulating film and the second insulating film so that the light surfaces of the light receiving and receiving elements face each other; and after bonding the first insulating film and the second insulating film. , a step of removing the second insulating film and the second insulating film in a region other than the region sandwiched between the light emitting element and the light receiving element.
〔産業上の利用分野）
本発明は、半導体装置の製造方法に関し、より詳しくは
、透明な絶縁膜を介して発光素子と受光素子を接続する
工程を含む半導体装置の製造方法に関する。[Industrial Field of Application] The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device including a step of connecting a light emitting element and a light receiving element via a transparent insulating film.
（従来の技術〕
？ｊ２数の電子回路相互間に信号を伝達する場合に、発
光素子と受光素子を使用して光信号の伝達を行うフォト
アイソレークが使用されているが、発光素子側の回路と
受光素子側の回路に印加する各りの電圧が大幅に異なる
ことがあるため、受光素子と発光素子との間に高絶縁耐
圧の透明な絶縁膜を介在したフォトアイソレータを使用
するようにしている。(Prior art) When transmitting signals between two electronic circuits, a photo isolator is used that transmits optical signals using a light emitting element and a light receiving element. Since the voltages applied to the circuit and the circuit on the light-receiving element side may differ significantly, it is recommended to use a photo-isolator with a transparent insulating film with high dielectric strength interposed between the light-receiving element and the light-emitting element. ing.
このようなフォトアイソレータを形成する方法の一例を
示すと、第４図に示すように、ガラス板４０の上下面に
シート状の接着剤４１．４２を貼付け、各シート状接着
剤４１．４２に発光素子４３と受光素子４４を押圧し、
これらを加熱した状態で発光素子４３と受光素子４４七
をガラス板４０に擦りつけてガラス板４０との間に含ま
れる気泡を排出することにより、ガラスキ反４０と、発
光素子４３と受光素子４４との密着性を向上させて光透
過率を高めるようにしている。An example of a method for forming such a photo isolator is as shown in FIG. Press the light emitting element 43 and the light receiving element 44,
By rubbing the light-emitting element 43 and the light-receiving element 447 against the glass plate 40 while heating them, and expelling the air bubbles contained between the glass plate 40, the glass plate 40, the light-emitting element 43, and the light-receiving element 44 are removed. The light transmittance is increased by improving adhesion with the material.
〔発明が解決しようとする課題〕
しかし、発光素子４３は数百μｍ、受光素子４４は数１
と＋ｉめで小さく、これらをガラスキ反４０に接合する
場合には、手作業によっているために手間がかかって量
産性が図れないといった問題があり、しかも、発光素子
４３と受光素子４４をガラス板４０に擦りつけながら位
置合わせする必要があるために、正確な１ケ置合わせが
難しく、歩留りが低いといった問題があった。[Problem to be solved by the invention] However, the light emitting element 43 is several hundred μm thick, and the light receiving element 44 is several hundred μm thick.
The light-emitting element 43 and the light-receiving element 44 are small, and when joining them to the glass plate 40, there is a problem that it is labor-intensive and difficult to achieve mass production because it is done manually. Because it is necessary to align while rubbing against the surface, it is difficult to accurately align one piece, resulting in a low yield.
本発明はこのような問題に鑑みてなされたものであって
、アイソレータの歩留りを向上するとともに、量産が可
能な半導体装置の製造方法を提供することを目的とする
。The present invention has been made in view of these problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device that can improve the yield of isolators and can be mass-produced.
上記した課題は、発光素子の周囲に透明な第一の絶縁膜
を形成する工程と、受光素子の周囲を透明な第二の絶縁
膜により覆う工程と、前記発光素子の発光面と前記受光
素子の受光面とを対向させて、前記第一の絶縁膜と前記
第二の絶縁膜とを貼合わせる工程と、前記第一の絶縁膜
と前記第二の絶縁膜とを張り合わせた後に、前記発光素
子と前記受光素子とにより挟まれた領域以外の前記第一
の絶縁膜と前記第二の絶縁膜を除去する工程とを有する
ことを特徴とする半導体装置の製造方法により解決する
。The above-mentioned problems include a step of forming a transparent first insulating film around the light emitting element, a step of covering the periphery of the light receiving element with a transparent second insulating film, and a step of forming a transparent first insulating film around the light emitting element, and a process of forming a transparent first insulating film around the light emitting element and the light receiving element. a step of bonding the first insulating film and the second insulating film so that the light-receiving surfaces of the The problem is solved by a method for manufacturing a semiconductor device, which includes a step of removing the first insulating film and the second insulating film in a region other than the region sandwiched between the element and the light receiving element.
（作 用）
本発明によれば、発光素子の発光面と受光素子の受光面
とを対向させた状態で、受光素子と発光素子の各々の周
囲に形成した透明な絶縁膜を貼合わせるようにしている
。(Function) According to the present invention, the transparent insulating films formed around each of the light-receiving element and the light-emitting element are pasted together with the light-emitting surface of the light-emitting element and the light-receiving surface of the light-receiving element facing each other. ing.
このため、位置合わせをしながら貼付けるといった簡単
な手作業によって発光素子と受光素子とを接合すること
ができ、位置合わせの際にズレが生じ難く、作業が容易
となって歩留りが高くなるとともに、量産性が向上する
ことになる。Therefore, the light-emitting element and the light-receiving element can be joined by simple manual work such as pasting them while aligning them, making it difficult for misalignment to occur during alignment, making the work easier, and increasing the yield. , mass productivity will be improved.
そこで、以下に本発明の実施例を図面に堪づいて説明す
る。Therefore, embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明の一実施例を示す装置の構成図であっ
て、図中符号１は、ｐｎ接合されたｐ型半導体層１ａと
ｎ型半導体層１ｂを有する発光ダイオードで、上面とな
るｎ型半導体層１ｂとその周囲に形成されたｐ゛型型半
体体層１ｃは対をなす電Ｊｉｌｄ、１ｅが形成されてお
り、これらの電１１ｄ、ｌｅ間に電圧を印加することに
より下面側のｐ型半導体層１ａから光を放出するように
構成されている。FIG. 1 is a block diagram of a device showing an embodiment of the present invention, and reference numeral 1 in the figure is a light emitting diode having a p-type semiconductor layer 1a and an n-type semiconductor layer 1b which are connected to each other in a pn junction. In the n-type semiconductor layer 1b and the p-type half layer 1c formed around it, a pair of electric currents 11d and 1e is formed, and by applying a voltage between these electric currents 11d and 1e, It is configured to emit light from the p-type semiconductor layer 1a on the lower surface side.
２は、発光ダイオードから放出された光を受光して電気
信号に変えるフォトトランジスタで、このフォトトラン
ジスタ２は、ｎ型のコレクタ層２Ｃと、その上に形成さ
れたＰ型のベース層２ｂと、ヘースｌ１２ｂの中に形成
されたｎ型のエミフタ層２ｅから形成され、また、エミ
フタ層２ｅの上にはエミンタ電極２ａが形成され、また
、コレクタ層２ｃの下にはｎ゛型の高導電Ｊｉ２ｄを介
してコレクタ電ｔｆｉ２ｆが形成されている。なお、フ
ォトトランジスタ２は、発光ダイオード１の発光面とフ
ォトトランジスタｌの受光面を位置合わせした状態で、
エミンタ電極２ａが発光ダイオード１から露出するよう
な大きさに形成されている。2 is a phototransistor that receives light emitted from a light emitting diode and converts it into an electric signal; this phototransistor 2 includes an n-type collector layer 2C, a P-type base layer 2b formed thereon, An emitter electrode 2a is formed on the emitter layer 2e, and an n-type highly conductive Ji2d is formed under the collector layer 2c. A collector voltage tfi2f is formed through the . Note that the phototransistor 2 is configured such that the light emitting surface of the light emitting diode 1 and the light receiving surface of the phototransistor l are aligned.
The emitter electrode 2a is formed in such a size that it is exposed from the light emitting diode 1.
上記した発光ダイオード１とフォトトランジスタ２を絶
縁膜を介して接続する場合には、まず、第１図（ｂ）に
示すように、気相成長法により発光ダイオード１とフォ
トトランジスタ２の周囲に厚さ１００〜数ｍｔ’ｎ程度
のＳｉｎｇ膜３．４を形成する。When connecting the above-mentioned light emitting diode 1 and phototransistor 2 via an insulating film, first, as shown in FIG. A Sing film 3.4 having a thickness of about 100 mt'n to several mt'n is formed.
次に、発光ダイオード１の発光面とフォトトランジスタ
２の受光面を対向させて、各々の周囲に形成したＳｉＯ
□膜３．４を面接触させてこれらを貼り合わせ、これを
図示しない加熱炉に入れて８００°Ｃ以上の温度で加熱
すると、２つの５ｉｏｚｌｌｉ３．４は接合する。Next, the light-emitting surface of the light-emitting diode 1 and the light-receiving surface of the phototransistor 2 are made to face each other, and SiO2 is formed around each.
□ When the films 3.4 are brought into surface contact and bonded together, and this is placed in a heating furnace (not shown) and heated at a temperature of 800° C. or more, the two 5iozlli 3.4 are bonded.
この後に、ｓｉｏ、ｌｌ！３．４によって覆われた発光
ダイオード１とフォトトランジスタ２をフン酸系の溶液
中に浸漬することにより、発光ダイオード１とフォトト
ランジスタ２に挟まれた領域以外のＳｉｎ、膜３．４を
除去すると、発光ダイオード１上面の電極１ｄ、ｌｅと
、フォトトランジスタ２上面のエミッタ電極２ｅと下面
のコレクタ電極２ｆが露出することになる。After this, sio,ll! By immersing the light emitting diode 1 and phototransistor 2 covered by 3.4 in a hydrochloric acid solution, the Sin and film 3.4 other than the area sandwiched between the light emitting diode 1 and phototransistor 2 are removed. , the electrodes 1d and le on the upper surface of the light emitting diode 1, the emitter electrode 2e on the upper surface of the phototransistor 2, and the collector electrode 2f on the lower surface are exposed.
このような工程では、発光ダイオード１とフォトトラン
ジスタ２の周りにＳｉＯ２膜３．４を形成して、これら
を位置決めしながら貼り合わせるだけなので、従来方法
のように、接着剤を使用してこれらの素子を擦りつけな
がら位置決めするといった面倒な作業を必要としない。In such a process, the SiO2 film 3.4 is simply formed around the light emitting diode 1 and the phototransistor 2, and these are bonded together while being positioned. There is no need for troublesome work such as positioning the elements while rubbing them.
以上のような工程によって形成されたフォトアイソレー
タの発光ダイオード１に電圧Ｅを印加すると、発光ダイ
オード１の下面から放出された光はＳｉＯ□膜３を透過
してフォトダイオード２のへ一ス層２ｂに入射すること
になる。When voltage E is applied to the light emitting diode 1 of the photoisolator formed by the above steps, the light emitted from the bottom surface of the light emitting diode 1 passes through the SiO It will be incident on .
この結果、フォトダイオード２を所定の電子回路５に接
続した状態で、エミッタ電Ｉｆｉ２ｅとコレクタ電極２
ｃから電流が流れることになる。As a result, with the photodiode 2 connected to the predetermined electronic circuit 5, the emitter electrode Ifi2e and the collector electrode 2
Current will flow from c.
なお、上記した実施例では、発光ダイオード１の発光面
とフォトトランジスタ２の受光面とにＳｉＯ□膜３．４
を存在させた状態でこれらを貼合わせるようにしたが、
第３図に示すように、フォトリソグラフィー法によりＳ
ｉＯ□膜３．４をパターニングして、発光ダイオード１
の発光面とフォトトランジスタ２のベース１１２ｂを露
出させる窓３ａ、４ａを形成した後に、Ｓｉｎ、膜３．
４を貼合わせることも可能である。In the above embodiment, the SiO□ film 3.4 is provided on the light emitting surface of the light emitting diode 1 and the light receiving surface of the phototransistor 2.
I tried to paste these together with .
As shown in Figure 3, S
Pattern the iO□ film 3.4 to form a light emitting diode 1.
After forming the windows 3a and 4a that expose the light emitting surface of the phototransistor 2 and the base 112b of the phototransistor 2, the Sin film 3.
It is also possible to bond 4 together.
また、上記した実施例では、発光素子と受光素子の周り
に形成する透明絶縁膜としてＳｉ□ｚ膜を用いたが、窒
化膜等を使用して貼合わせ作業をすることもできる。Further, in the above-described embodiment, a Si□z film was used as the transparent insulating film formed around the light emitting element and the light receiving element, but a nitride film or the like may also be used for bonding work.
以上述べたように本発明によれば、発光素子の発光面と
受光素子の受光面とを対向させた状態で、受光素子と発
光素子の各々の周囲に形成した透明な絶縁膜を貼合わせ
るようにしたので、位置合わせをしながら貼付けるとい
った簡単な手作業によって発光素子と受光素子を接合す
ることができ、位置合わせの際にズレが生じ難く、作業
が容易となり、装置の歩留りが高くなることができると
ともに、量産性を向上することができる。As described above, according to the present invention, the transparent insulating films formed around each of the light receiving element and the light emitting element are pasted together with the light emitting surface of the light emitting element and the light receiving surface of the light receiving element facing each other. As a result, the light emitting element and the light receiving element can be joined by simple manual work such as pasting while aligning, making it difficult for misalignment to occur during alignment, making the work easier, and increasing the yield of the device. At the same time, it is possible to improve mass productivity.
第１図は、本発明の第１実施例を断面で示す工程図、
第２図は、本発明の第１実施例により形成した装置の斜
視図、
第３図は、本発明の第２実施例を断面で示す工程図、
第４図は、従来方法を断面で示す工程図である。
（符号の説明）
１・・・発光ダイオード（発光素子）、２・・・フォト
トランジスタ（受光素子）、３．４・・・ＳｉＯ２膜（
透明絶縁膜）３ａ、４ａ・・・窓。
出 願 人 富士通株式会社FIG. 1 is a process diagram showing a first embodiment of the present invention in cross section; FIG. 2 is a perspective view of an apparatus formed according to the first embodiment of the present invention; FIG. 3 is a process diagram showing a second embodiment of the present invention. Process diagram showing an example in cross section. FIG. 4 is a process diagram showing a conventional method in cross section. (Explanation of symbols) 1... Light emitting diode (light emitting element), 2... Phototransistor (light receiving element), 3.4... SiO2 film (
transparent insulating film) 3a, 4a... window. Applicant Fujitsu Limited
Claims (1)
、 受光素子の周囲を透明な第二の絶縁膜により覆う工程と
、 前記発光素子の発光面と前記受光素子の受光面とを対向
させて、前記第一の絶縁膜と前記第二の絶縁膜とを貼合
わせる工程と、 前記第一の絶縁膜と前記第二の絶縁膜とを張り合わせた
後に、前記発光素子と前記受光素子とにより挟まれた領
域以外の前記第一の絶縁膜と前記第二の絶縁膜を除去す
る工程とを有することを特徴とする半導体装置の製造方
法。[Claims] A step of forming a transparent first insulating film around a light emitting element; a step of covering a periphery of a light receiving element with a transparent second insulating film; a step of bonding the first insulating film and the second insulating film with the light-receiving surface of the element facing each other; and after bonding the first insulating film and the second insulating film, A method for manufacturing a semiconductor device, comprising the step of removing the first insulating film and the second insulating film in a region other than the region sandwiched between the light emitting element and the light receiving element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1313664A JPH03173483A (en) | 1989-12-01 | 1989-12-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1313664A JPH03173483A (en) | 1989-12-01 | 1989-12-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03173483A true JPH03173483A (en) | 1991-07-26 |
Family
ID=18044024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1313664A Pending JPH03173483A (en) | 1989-12-01 | 1989-12-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03173483A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612258A (en) * | 1994-06-29 | 1997-03-18 | Rohm Co., Ltd. | Method of producing a semiconductor laser device |
| JP2002504754A (en) * | 1998-02-18 | 2002-02-12 | インフィネオン・テクノロジーズ・アーゲー | Component having optical transmitter and optical receiver |
| JP2005259806A (en) * | 2004-03-09 | 2005-09-22 | Olympus Corp | Photocoupler, photocoupler array, and semiconductor integrated circuit incorporating photocoupler |
-
1989
- 1989-12-01 JP JP1313664A patent/JPH03173483A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612258A (en) * | 1994-06-29 | 1997-03-18 | Rohm Co., Ltd. | Method of producing a semiconductor laser device |
| JP2002504754A (en) * | 1998-02-18 | 2002-02-12 | インフィネオン・テクノロジーズ・アーゲー | Component having optical transmitter and optical receiver |
| JP2005259806A (en) * | 2004-03-09 | 2005-09-22 | Olympus Corp | Photocoupler, photocoupler array, and semiconductor integrated circuit incorporating photocoupler |
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