JPH03170663A - Vapor deposition device - Google Patents

Abstract

PURPOSE:To obtain different film thicknesses by vapor deposition with a single device in one stage and to easily control the deposition rate by providing a shielding plate consisting of plural members to change the area of the overlapped opening between a means for holding a body to be deposited and the vaporization source of a vapor-deposition material. CONSTITUTION:Many glass substrates 1a and 1b to be vapor-deposited are held by a dome 2 with the surface to be deposited almost opposed to the vaporization source 3. The shielding plate 4 is provided between the dome 2 and the source 3, and formed with two shielding members 4a and 4b respectively having openings 5a and 5b so that the openings are overlapped. The member 4a is rotated by a driving device 7 in direction of the arrow so that the openings are overlapped and the area is changed. As a result, the amt. of the vapor passing through the opening of the shielding plate 4 is controlled. Accordingly, the deposition rate of the substrate 1a is made different from that of the substrate 1b and freely set, and the glass substrates having different film thicknesses are obtained in one stage.

Description

[Detailed Description of the Invention] Industrial Application Field of the Invention This invention relates to a vapor deposition apparatus used for forming optical thin films, etc. Prior Art A conventional vapor deposition apparatus for forming thin films on glass substrates will be explained. .

Figure 3 shows a conventional vacuum evaporation apparatus for forming an optical thin film on a glass substrate LC as an optical substrate. Although the dome 21 is rotatably arranged around a vertical axis, the multiple glass substrates 1c
Even if the evaporation source 3 (upper part) is held so that its surface to be evaporated approximately faces the evaporation source 3, the evaporation material (which is located at the lower part of the chamber and is heated and melted by heating means (not shown) such as an electron beam) ( For example, Tio2, Sio2, etc.) steam,
Even if it is supplied to the glass substrate 1c, the evaporated atoms or molecules 1 rising from the evaporation source 3 may adhere to the surface of the glass substrate LC to form a thin film, or the evaporated atoms or molecules 1 rising from the evaporation source 3 may form a thin film on the substrate LC held in large numbers by the shielding plate 41 & dome 2. In order to make the evaporation film thickness uniform, the evaporation source 3 is arranged to alleviate the uneven spatial distribution of vapor from the evaporation source 3.
The shape seen from the top is, for example, as shown in FIG. On the other hand, only the same film thickness can be obtained.In other words, it is impossible to perform vapor deposition by setting the film thickness separately for some glass substrates on the plate dome 2 and for other glass substrates. As a result, an optical thin film with only one type of optical property could be obtained in one cycle of deposition process. The film forming process requires one or several cycles, and in the in-line method, it is necessary to provide multiple vapor deposition lines, or to separate each lot and sequentially flow the film. The purpose of the present invention is to provide an evaporation apparatus that can deposit a film thickness of 100% in a single process in one apparatus, and also allows easy control of the evaporation rate. A shielding plate constructed by combining a plurality of shielding members having openings so that the openings overlap is arranged between the dome, which is a holding means for the substrate, and the evaporation source, and at least one shielding member is arranged so that the overlapping area of the openings is The effect of the above means is as follows: By relatively shifting the shielding members, the overlapping area of the openings changes.Therefore, the steam passing through the openings changes. The amount can be controlled.

The conclusion is about the substrate where the thin film formation is performed by the vapor passing through this opening! It is possible to freely control the thickness of the film or the deposition rate.

EXAMPLES Below, examples of the present invention will be described with reference to the drawings.

FIG. 1 (top) is a schematic diagram of a vapor deposition apparatus according to an embodiment of the present invention. FIG. 2 (top) is a detailed structural diagram of a shielding plate 4 according to the embodiment of FIG.

As shown in FIG. 2, the shielding plate 4 in this embodiment has two shielding members 4a and 4b having openings 5a and 5b.
The openings are combined so that they overlap. And the shielding member 4a? The upper drive device 7 rotates in the direction indicated by the arrow in FIG. 1 in which the overlapping area of the openings changes.

Although it is possible to control the amount of steam passing through the opening of the viscosity shielding plate 4, the operation of the apparatus of this embodiment is as follows.

A large number of glass substrates 41, which are objects to be evaporated, are held by a dome 2, which is a holding means, with the surfaces to be evaporated generally opposed to the evaporation source 3.

In the evaporation source 3 (for example, Tio2, Si○2, etc.) is heated and melted by a heating means (not shown), and the vapor rises in the chamber 6.
It passes through the opening of the shielding plate 4 and is deposited on the glass substrate 1a. Other vapors that do not pass through the openings of the shielding plate 4 may adhere to the glass substrate lb, but the present embodiment {1) As described above, since the opening area of the shielding plate 4 can be varied, the evaporation rate l of the glass substrate 1a can be increased. You can freely set it to a different value. Therefore, glass substrates with different film thicknesses can be manufactured in about 12 minutes. However, by controlling the opening area of the shielding plate 4, the film thickness of the glass substrate 1a can be freely controlled. Needless to say, it can be applied not only to elements but also to other thin film devices (in addition, in the conventional example above)
As explained above, the present invention solves the problems of the past.
This method has excellent effects in that it is possible to manufacture thin film devices with different film thicknesses or characteristics in each process, and it is also possible to provide a vapor deposition apparatus in which the vapor deposition rate can be freely set.

[Brief explanation of the drawing]

Fig. 41 A cross-section of the main part of a vapor deposition apparatus according to an embodiment of the present invention @ Fig. 2 (top) The structure of the shielding plate in this embodiment is {Yo
FIG. 3 is a plan view of a conventional light shielding plate. la, lb...Glass substrate (deposited object), 2...
Dome (holding means), 3... Evaporation detection 4... Shielding plate, 4a, 4b... Shielding member, 5a, 5b...
・Kaishi

Claims (1)

[Claims] A holding means for holding an object to be vapor deposited, an evaporation source for a vapor deposition material that supplies a vapor deposition material to the object to be vapor deposited, and a plurality of shielding members each having an opening and disposed between the holding means and the evaporation source. A vapor deposition apparatus comprising: a shielding plate configured by combining apertures such that their openings overlap; and a driving means for moving at least one of the shielding members in a direction in which an overlapping area of the apertures changes.