JPH03167741A - Electron gun for medium vacuum - Google Patents

Electron gun for medium vacuum

Info

Publication number
JPH03167741A
JPH03167741A JP1304585A JP30458589A JPH03167741A JP H03167741 A JPH03167741 A JP H03167741A JP 1304585 A JP1304585 A JP 1304585A JP 30458589 A JP30458589 A JP 30458589A JP H03167741 A JPH03167741 A JP H03167741A
Authority
JP
Japan
Prior art keywords
gas
filament
reaction
electron gun
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1304585A
Other languages
Japanese (ja)
Inventor
Yoshihito Suzuki
鈴木 悦人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP1304585A priority Critical patent/JPH03167741A/en
Publication of JPH03167741A publication Critical patent/JPH03167741A/en
Pending legal-status Critical Current

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  • X-Ray Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To stably use an electron gun for medium vacuum over a long period even under reaction gas atmosphere that causes bad effects on an electron supply element by providing an inactive gas supply means for keeping the electron emitting portion of the element in inactive gas atmosphere. CONSTITUTION:During supply of reaction gas to inside a reaction container 6, argon gas is supplied from a gas supply system 3 to around the filament 1 of an electron gun 7. Atmospheric gas (including the reaction gas and the argon gas) is continuously exhausted from inside the reaction container 6 through an exhaust system 8; the density distribution of the argon gas whose peak is located in a point around the filament 1 of the electron gun 2 is thereby formed inside the reaction container 6 whose pressure is kept constant during the above process. Therefore, the density of the reaction gas is at its minimum around the filament 1 and the possibility of the reaction gas making contact and reacting with the heated portion of the filament 1 is reduced. Normal emission of thermoelectrons by the filament 1 is thus maintained over a long period of time.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、フィラメント等の電子供給素子を使用雰囲気
から保護するための機構を備えた、中真空領域(10−
’〜1 0−’torr)における化学反応プロセスに
用いられて好適な電子銃に関する。
Detailed Description of the Invention [Industrial Application Field] The present invention provides a medium vacuum region (10-
The present invention relates to an electron gun suitable for use in chemical reaction processes at temperatures of up to 10 torr.

[従来の技術〕 電子ビーム溶解やX線発生等の用途に供される高真空用
電子銃では、フィラメント等の電子供給素子で発生した
電子を数KV以上の高電圧で加速して用いるが、ガス分
子の励起イオン化やガス化字反応のトリガ等の用途に電
子銃を用い、中真空のガス雰囲気中でその化学反応を制
御させる場合には士数V以下のソフトな加速が必要とさ
れる。すなわち、ここでは、高エネルギー電子によるカ
ス分子の不必要な分解や損傷を避けるとともに、コント
ロールされた種類と速度の反応を得ることが目的とされ
る。
[Prior Art] In high vacuum electron guns used for applications such as electron beam melting and X-ray generation, electrons generated by an electron supply element such as a filament are accelerated at a high voltage of several kilovolts or more. When using an electron gun to excite ionize gas molecules or trigger gasification reactions, and to control chemical reactions in a medium-vacuum gas atmosphere, soft acceleration of less than V is required. . That is, the aim here is to avoid unnecessary decomposition or damage to the dregs molecules by high-energy electrons, and to obtain a reaction of controlled type and rate.

一般的に、電子銃における電子発生方法としては、加熱
物質からの熱電子放出によるもの以外にも、物質の光励
起による光電子放出、高電圧を印加した突起物からの電
子の電界放出、放電ガスプラズマから引出電圧により電
子を引出す等の方法があるが、上述のソフトな加速を行
なう電子銃においては、熱電子放出または光電子放出に
よるものが採用される。これは電界放出や放電ガスプラ
ズマによる、発生時点で既に高い、またはばらついたエ
ネルギーを持つ電子を十数V以下の揃ったエネルキーレ
ベルに調整することが困難なことによる。
Generally, electron generation methods in electron guns include, in addition to thermionic emission from a heated substance, photoelectron emission by photoexcitation of a substance, field emission of electrons from a protrusion to which a high voltage is applied, and discharge gas plasma. There is a method of extracting electrons from the electron beam using an extraction voltage, but in the electron gun that performs the above-mentioned soft acceleration, a method using thermionic emission or photoelectron emission is adopted. This is because it is difficult to adjust electrons, which already have high or variable energy at the time of generation, to a uniform energy level of less than a dozen V due to field emission or discharge gas plasma.

r8 2図は、フィラメント1に熱電子放出を行なわせ
る形式の電子銃2Bと、これを用いて薄膜形成を行なう
プロセス装置の例を示す。このプロセス装置では、反応
ガス雰囲気の圧力を中真空領域( l O−2〜1 0
−’torr)に保った状態で、反応ガス分子に十数e
Vの低エネルギー電子ビームを照射してイオン化し、こ
れを基板11上で相互に架橋させることにより薄膜形成
を行なう。
FIG. r82 shows an example of an electron gun 2B that causes the filament 1 to emit thermionic electrons, and a process device that forms a thin film using the electron gun 2B. In this process equipment, the pressure of the reaction gas atmosphere is controlled in the medium vacuum region (lO-2~10
-'torr), the reaction gas molecules are
A thin film is formed by irradiating a low-energy electron beam of V to ionize it and mutually crosslinking it on the substrate 11.

第2図において、反応容器6には、大気や反応カス等を
排気するための排気系8と、反応ガスを供給するための
反応ガス容器、流量調節器、配管等からなる反応ガス供
給系7とが接続される。プロセス開始に先立って反応容
器6内の大気は排気系8により高真空( 1 0−”−
1 0−’torr)に排気され、その後反応ガス供給
系7により反応容器6内に反応ガスか供給される。プロ
セス中の反応容器6内の圧力は、排気系8の排気特性と
、反応ガス供給系7の供給量と、反応ガスの反応速度と
のバランスに依存するので、図示しない制御系により反
応ガス供給系7の供給量を調整することにより反応容器
6内は中真空領域(10−2〜10−’torr)の所
定圧力に保たれる。
In FIG. 2, the reaction vessel 6 includes an exhaust system 8 for exhausting the atmosphere, reaction residue, etc., and a reaction gas supply system 7 consisting of a reaction gas container, a flow rate regulator, piping, etc. for supplying the reaction gas. are connected. Prior to the start of the process, the atmosphere inside the reaction vessel 6 is brought to a high vacuum (10"-") by the exhaust system 8.
10-'torr), and then a reaction gas is supplied into the reaction vessel 6 by the reaction gas supply system 7. The pressure inside the reaction vessel 6 during the process depends on the balance between the exhaust characteristics of the exhaust system 8, the supply amount of the reaction gas supply system 7, and the reaction rate of the reaction gas, so the reaction gas is supplied by a control system (not shown). By adjusting the supply amount of the system 7, the inside of the reaction vessel 6 is maintained at a predetermined pressure in the medium vacuum region (10-2 to 10-'torr).

一方、電子銃2Bは、タングステン製のフィラメント1
、導電性の筒2b、グリット5等で構成され、フィラメ
ント1、グリッド5は、それぞれ反応容器6外のフィラ
メント電流電源13と加速電圧電源14に接続される。
On the other hand, the electron gun 2B has a filament 1 made of tungsten.
, a conductive tube 2b, a grid 5, etc., and the filament 1 and the grid 5 are connected to a filament current power source 13 and an accelerating voltage power source 14 outside the reaction vessel 6, respectively.

ここで、フィラメント1を含む電子銃2Bには、加速電
圧電源14により正の電圧が印加されているのて、フィ
ラメント1で発生した熱電子は、筒2bとグリット5の
間の電界を転落するとともに運動エネルギーを蓄え矢印
の方向に飛び出す。
Here, since a positive voltage is applied to the electron gun 2B containing the filament 1 by the accelerating voltage power supply 14, the thermoelectrons generated in the filament 1 fall through the electric field between the tube 2b and the grid 5. It stores kinetic energy and flies out in the direction of the arrow.

さて、所定圧力の反応ガス雰囲気に保たれた反応容器6
内に電子銃2Bから電子ビームが照射されると、反応ガ
ス分子が励起、分解されて、反応性に富んだ活性分子が
形威される。この活性分子は、基板11上に堆積した後
に、さらに相互の活性分子間で架橋反応を進行させて薄
膜12を形戒する。
Now, the reaction vessel 6 maintained in a reaction gas atmosphere at a predetermined pressure
When an electron beam is irradiated from the electron gun 2B into the inside, the reactive gas molecules are excited and decomposed to form highly reactive active molecules. After the active molecules are deposited on the substrate 11, a crosslinking reaction is further progressed between the active molecules to form the thin film 12.

[従来技術の問題点コ 上述のプロセスの電子銃2Bを含む反応容器6内は、中
真空領域における所定圧力に制御された反応ガスで満た
されるから、不要な酸素や水分によるフィラメント1の
酸化蒸発に加えて、反応カス自身やプロセス反応副生威
物によるフィラメント1の劣化が問題とされた。すなわ
ち、反応ガスによりフィラメント1の表面に膜か形成さ
れるため電子放出か直接妨げられる゛。また、フィラメ
ント1表面も反応ガスイオン等によりスパッタざれるた
め、フィラメントの熱電子放出特性か大きくY氏下する
[Problems with the prior art] Since the interior of the reaction vessel 6 containing the electron gun 2B in the above process is filled with a reaction gas controlled to a predetermined pressure in a medium vacuum region, the filament 1 is oxidized and vaporized by unnecessary oxygen and moisture. In addition to this, deterioration of the filament 1 due to the reaction residue itself and process reaction by-products was considered a problem. That is, a film is formed on the surface of the filament 1 by the reactive gas, which directly prevents electron emission. Further, since the surface of the filament 1 is also sputtered by reactive gas ions, etc., the thermionic emission characteristics of the filament are greatly reduced by Y.

上述の事から、電子銃寿命を確保すへくプロセス進行に
は都合の悪い不当に低い反応ガスの圧力を選択した場合
でも、フィラメントの熱電子放出能力は急速に失われる
ため、長時間の運転は不可能てあった。
From the above, even if you choose an unreasonably low reaction gas pressure that is inconvenient for the process to ensure the lifetime of the electron gun, the filament's ability to emit thermionic electrons will be rapidly lost, making long-term operation unnecessary. It was impossible.

一方、電子供給素子としてCdS等の光電材料を用いて
光電子放出を行なわせる試みも行なわれた。しかし、反
応ガスにより光電材料の表面に膜h)形成ざれて光篭子
放出か阻害されるので、同様に長時間の運転は不可能で
あった。
On the other hand, attempts have also been made to emit photoelectrons using photoelectric materials such as CdS as electron supply elements. However, a film (h) is formed on the surface of the photoelectric material due to the reaction gas and the emission of the light cage is inhibited, so long-term operation is similarly impossible.

以上のように中真空の反応ガス雰囲気中で従来の高真空
用電子銃を用いた場合、長時間安定にこの電子銃を稼動
させることかてきず、このことが従来の技術の問題点で
あった。
As described above, when a conventional high-vacuum electron gun is used in a medium-vacuum reaction gas atmosphere, it is difficult to operate the electron gun stably for a long time, and this is a problem with the conventional technology. Ta.

[発明の目的] 本発明は、電子供給素子に悪影響を与える反応ガス雰囲
気下でも十分に長期間、安定して使用できる電子銃を提
イ共することを目的とする。
[Object of the Invention] An object of the present invention is to provide an electron gun that can be stably used for a sufficiently long period of time even in a reactive gas atmosphere that adversely affects an electron supply element.

[課題を解決するための手段コ 本発明に係る中真空用電子銃は、光電子放出または熱電
子放出を行なう電子供給素子を備えた、中真空雰囲気中
で用いられる電子銃において、この素子の電子放出部分
を不活性ガス雰囲気に保つための不活性ガス供給手段を
具備させたものである。
[Means for Solving the Problems] The electron gun for medium vacuum according to the present invention is equipped with an electron supply element that emits photoelectrons or thermionic electrons and is used in a medium vacuum atmosphere. It is equipped with an inert gas supply means for maintaining the discharge part in an inert gas atmosphere.

[作用コ 本発明に係る電子銃においては、中真空の反応〜ガス雰
囲気中で、電子供給素子か光電子放出または熱電子放出
による比較的低エネルギーの電子孜出を行なう。ここで
、不活性ガス供給手段は、電子供給素子の電子放出部分
の周囲に不活性ガスを供給することにより、この部分に
おける反応ガス分圧を低下させて電子供給素子の劣化を
防ぐ。
[Function] In the electron gun according to the present invention, the electron supply element produces relatively low-energy electrons by photoelectron emission or thermionic emission in a medium vacuum reaction or gas atmosphere. Here, the inert gas supply means supplies an inert gas around the electron emitting part of the electron supply element to reduce the partial pressure of the reactive gas in this part and prevent deterioration of the electron supply element.

ここで言う不活性ガスとしては、アルゴンガス等の希ガ
ス、窒素ガス、または水素ガス等が用いられる。
As the inert gas mentioned here, a rare gas such as argon gas, nitrogen gas, hydrogen gas, or the like is used.

[発明の実施例] 本発明の実施例を図面を参照して説明する。[Embodiments of the invention] Embodiments of the present invention will be described with reference to the drawings.

第1図は、本発明の実施例に係る中真空用電子銃と、こ
れを組込んだプロセス装置の概略な構成を示す。本実施
例は、従来例と同様な薄膜形成を基板11上に行なうも
のであるが、その際、電子銃2の筒2a内にガス供給系
3からアルゴンガスを導入、供給してフィラメント1に
吹きつけ、その加熱部分の周辺から反応ガスを排除する
ことにより、高真空度下における運転の場合と同様な、
、フィラメント1寿命を得るものである。
FIG. 1 shows a schematic configuration of a medium vacuum electron gun according to an embodiment of the present invention and a process device incorporating the gun. In this embodiment, a thin film is formed on the substrate 11 in the same way as in the conventional example, but at that time, argon gas is introduced and supplied from the gas supply system 3 into the cylinder 2a of the electron gun 2 to fill the filament 1. By blowing and removing the reactant gas from around the heated part, the
, the filament life is 1.

ここで、従来例で説明した部材と同様な構成と機能を有
する部材には同一の符号を付して説明を省略する。
Here, members having the same configuration and function as those described in the conventional example are given the same reference numerals, and the description thereof will be omitted.

第1図において、電子銃2は、タングステン製のフィラ
メント1、導電性の円筒形の筒2a,グリッド5等で構
成され、フィラメント電流電源13と加速電圧電源14
とから電力を供給ざれて、熱電子を発生し、これを加速
して射出する。
In FIG. 1, the electron gun 2 is composed of a tungsten filament 1, a conductive cylindrical tube 2a, a grid 5, etc., and includes a filament current power source 13 and an accelerating voltage power source 14.
It is supplied with electric power and generates thermoelectrons, which are accelerated and ejected.

一方、電子銃2のベース部分には筒2a内にアルゴンガ
スを供給するためのガス供給口3aが設けられる。また
、ガス供給口3aには、密閉容器6外部に設けられたア
ルゴンガス容器、流量調節器、配管等からなるガス供給
系3か接続される。
On the other hand, the base portion of the electron gun 2 is provided with a gas supply port 3a for supplying argon gas into the cylinder 2a. Further, a gas supply system 3 including an argon gas container, a flow rate regulator, piping, etc. provided outside the closed container 6 is connected to the gas supply port 3a.

ここで、不活性ガスは、フィラメント1に対して、いず
れの方向から吹きつけるようにしても良いが、第1図の
ように電子が射出する反対側から吹きつけるのが好まし
い。また、シールド2aの形状は円筒形以外の形状とす
ることも可能であるが、不活性ガスの流れが乱されて発
生する、筒2a壁面への放出電子の吸収や、射出電子の
エネルギー幅の拡大を防ぐためには、円筒形とすること
が望ましい。
Here, the inert gas may be blown onto the filament 1 from any direction, but preferably from the opposite side from which electrons are emitted as shown in FIG. In addition, the shape of the shield 2a can be made into a shape other than cylindrical, but this may prevent the absorption of emitted electrons on the wall surface of the cylinder 2a, which occurs due to the disturbance of the flow of the inert gas, or the energy width of the emitted electrons. To prevent expansion, a cylindrical shape is desirable.

さて、本実施例のプロセス装置では、反応容器6内に反
応ガスが供給される期間中、ガス供給系3から電子銃2
のフィラメント1周囲にアルゴンガスが供給される。一
方、排気系8からは反応容器6内の雰囲気ガス(反応ガ
スとアルゴンガスを含む)がPJ 14的に排気される
ので、プロセス中一定圧力に保たれる反応容器6内には
、電子銃2のフィラメント1周囲をピークとするアルゴ
ンガスの濃度分布が形成される。従って、フィラメント
1周囲で反応ガス濃度は最低となり、反応ガスとフィラ
メント1の加熱部分との接触、および反応の機会か減る
から、従来例の電子銃の場合よりも長期間、フィラメン
ト1は正常な熱電子放出を維持することができる。
Now, in the process apparatus of this embodiment, during the period when the reaction gas is supplied into the reaction vessel 6, the electron gun 2 is supplied from the gas supply system 3.
Argon gas is supplied around the filament 1. On the other hand, the atmospheric gas (including reaction gas and argon gas) in the reaction vessel 6 is exhausted from the exhaust system 8 in a PJ 14 manner. An argon gas concentration distribution having a peak around the filament 1 of No. 2 is formed. Therefore, the concentration of the reactant gas is lowest around the filament 1, and the contact between the reactant gas and the heated part of the filament 1 and the chance of reaction are reduced, so that the filament 1 remains normal for a longer period of time than in the case of conventional electron guns. Thermionic emission can be maintained.

また、本実施例の反応装置ては、加速電圧を20V以下
に設定しているので、アルゴンガス分子の電離はほとん
ど発生せず、従って従来例の場合のような電離した反応
ガスによる電子銃2内ての電子ビームの散乱や吸収か抑
制されるため、出力効率か向上して電子ビーム出力か増
した。
In addition, in the reaction apparatus of this embodiment, since the accelerating voltage is set to 20 V or less, ionization of argon gas molecules hardly occurs. Since scattering and absorption of the internal electron beam are suppressed, the output efficiency is improved and the electron beam output is increased.

本実施例においては、ボンベを用いて不活性ガスを供給
する構成としたが、不活性ガスの吸収体や固体ソースを
加熱する等して不活性ガスを供給したり、第2図の電子
銃2のシールド2aの出口側に反応ガスを分解して不活
性ガスを生成する分解機構等を設けることによっても同
様な効果を期待できる。
In this embodiment, the inert gas was supplied using a cylinder, but the inert gas could also be supplied by heating an inert gas absorber or a solid source, or by heating the inert gas absorber or solid source. A similar effect can be expected by providing a decomposition mechanism or the like that decomposes the reactive gas to generate an inert gas on the exit side of the shield 2a.

[発明の効果コ 本発明に係る中真空用電子銃においては、不活性ガスが
電子供給素子の電子放出部分を保護するから、電子供給
素子に害のある雰囲気ガス中て使用される場合、従来例
の電子銃よりも長期間の運転を安定に行なうことができ
る。従って、この電子銃を用いて中真空の反応ガス雰囲
気中で化学反応等の制御を行わせる場合、電子供給素子
に対する影響を気にせずにプロセス進行に都合の良い雰
囲気ガス圧力を選択しても長時間の反応プロセスを遂行
できる。
[Effects of the Invention] In the medium vacuum electron gun according to the present invention, since the inert gas protects the electron emitting part of the electron supply element, when it is used in an atmospheric gas that is harmful to the electron supply element, it is It can operate more stably for a longer period of time than the example electron gun. Therefore, when using this electron gun to control chemical reactions, etc. in a medium-vacuum reaction gas atmosphere, it is possible to select an atmosphere gas pressure that is convenient for process progress without worrying about the effect on the electron supply element. Capable of carrying out long reaction processes.

従って、例えば、比較的厚い蒲膜形成プロセスも可能と
なる等、電子銃を用いるプロセスの用途範囲か拡大され
る。また、電子銃のトラブルか減少してプロセス装置の
稼動率が向上する等、電子銃を組込んだ装置の信頼性の
向上およびランニングコストの軽減が可能となる。
Therefore, the range of applications of the process using an electron gun is expanded, for example, the process of forming a relatively thick capsule becomes possible. In addition, problems with the electron gun are reduced and the operating rate of the process equipment is improved, making it possible to improve the reliability of equipment incorporating the electron gun and reduce running costs.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の実施例の電子銃とこれを用いた化学
反応プロセス装置の概略な構成を示す模式図である。 第2図は、従来例の電子銃とこれを用いた化学反応プロ
セス装置の概略な構成を示す模式図である。 [主要部分の符号の説明] 1・・・フィラメント   2・・・電子銃3・・・ガ
ス供給系    6・・・反応容器8・・・排気系
FIG. 1 is a schematic diagram showing the general configuration of an electron gun and a chemical reaction process apparatus using the electron gun according to an embodiment of the present invention. FIG. 2 is a schematic diagram showing the general configuration of a conventional electron gun and a chemical reaction process device using the same. [Explanation of symbols of main parts] 1...Filament 2...Electron gun 3...Gas supply system 6...Reaction vessel 8...Exhaust system

Claims (1)

【特許請求の範囲】 光電子放出または熱電子放出を行なう電子供給素子を備
えた、中真空雰囲気中で用いられる電子銃において、 前記素子の電子放出部分を不活性ガス雰囲気に保つため
の不活性ガス供給手段を具備させたことを特徴とする中
真空用電子銃。
[Claims] In an electron gun used in a medium vacuum atmosphere and equipped with an electron supply element that emits photoelectrons or thermionic electrons, an inert gas for maintaining an electron emitting part of the element in an inert gas atmosphere. A medium vacuum electron gun characterized by being equipped with a supply means.
JP1304585A 1989-11-27 1989-11-27 Electron gun for medium vacuum Pending JPH03167741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1304585A JPH03167741A (en) 1989-11-27 1989-11-27 Electron gun for medium vacuum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1304585A JPH03167741A (en) 1989-11-27 1989-11-27 Electron gun for medium vacuum

Publications (1)

Publication Number Publication Date
JPH03167741A true JPH03167741A (en) 1991-07-19

Family

ID=17934771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1304585A Pending JPH03167741A (en) 1989-11-27 1989-11-27 Electron gun for medium vacuum

Country Status (1)

Country Link
JP (1) JPH03167741A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017162645A (en) * 2016-03-09 2017-09-14 浜松ホトニクス株式会社 Charging processor and electron source unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017162645A (en) * 2016-03-09 2017-09-14 浜松ホトニクス株式会社 Charging processor and electron source unit

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