JPH03167523A - Liquid crystal holding substrate, production thereof and liquid crystal display device - Google Patents

Liquid crystal holding substrate, production thereof and liquid crystal display device

Info

Publication number
JPH03167523A
JPH03167523A JP30788489A JP30788489A JPH03167523A JP H03167523 A JPH03167523 A JP H03167523A JP 30788489 A JP30788489 A JP 30788489A JP 30788489 A JP30788489 A JP 30788489A JP H03167523 A JPH03167523 A JP H03167523A
Authority
JP
Japan
Prior art keywords
liquid crystal
film
alcohol
substrate
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30788489A
Other languages
Japanese (ja)
Inventor
Shunichiro Uchimura
内村 俊一郎
Yasuo Shimamura
泰夫 島村
Hiroyuki Morishima
森嶋 浩之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP30788489A priority Critical patent/JPH03167523A/en
Publication of JPH03167523A publication Critical patent/JPH03167523A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain liq. crystal holding substrates having high reliability by allowing a specified silicon compd. to react with >=5C alcohol in the presence of a catalyst, removing produced <=4C alcohol, carrying out hydrolysis and condensation, applying the resulting compsn. for forming silica films and forming oriented films on the formed insulating films. CONSTITUTION:A silicon compd. represented by formula I (where R' is 1-4C alkyl, R is 1-4C alkyl and/or acetyl and n is an integer of 0-3) is mixed with >=5C alcohol and/or alcohol deriv., a catalyst is added and they are heated. At this time, it is preferable that <=4C solvent produced by an exchange reaction is completely removed. Water is then added and hydrolysis and condensation are carried out. The resulting compsn. for forming silica films is applied and cured to form insulating films and oriented films are further formed on the insulating films. A low-cost liq. crystal display device having high reliability is obtd.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は.液晶表示素子の上下基板間導通による表示不
良を改善する液晶挾持基板その製造方法および液晶表示
素子に関する。
[Detailed Description of the Invention] (Industrial Application Field) The present invention... The present invention relates to a method for manufacturing a liquid crystal holding substrate that improves display defects caused by conduction between upper and lower substrates of a liquid crystal display element, and to a liquid crystal display element.

(従来の技術) 従来,液晶表示素子の製造に関しては.パターニングさ
れた透明電極を有する基板に.ポリイミド等の有機高分
子からなる配向膜を塗布形成し配向処理を行った後.素
子を組み立てる方法が用いられていた。しかし近年.液
晶表示素子の大型化に伴い,配向膜のビンホールや素子
のギャップ中に混入した異物が配向膜をキズつけたシ,
突き破ることによって起こる上下基板間の導通による表
示不良が問題となっている。
(Prior art) Conventionally, regarding the manufacture of liquid crystal display elements. On a substrate with patterned transparent electrodes. After applying an alignment film made of an organic polymer such as polyimide and performing alignment treatment. A method of assembling elements was used. But in recent years. As liquid crystal display elements become larger, there are cases where the alignment film is scratched by foreign matter that gets into the alignment film's bottle holes or the element gaps.
Display defects due to conduction between the upper and lower substrates caused by the break-through have become a problem.

最近では,これを解決する手段として.透明電極と配向
膜の間に絶縁性の層を形戒する方法が検討され,例えば
(1)スパッタリングによυ低温で酸化膜を形或する方
法,(2)アルコキシシラン,アルコキシチタン及び増
粘剤として有機化合物を含む溶液を印刷法等で塗布した
後.熱処理して酸化膜とする方法等が採用されている。
Recently, as a means to solve this problem. Methods of forming an insulating layer between the transparent electrode and the alignment film have been studied, such as (1) forming an oxide film at a low temperature by sputtering, (2) using alkoxysilane, alkoxytitanium, and thickening. After applying a solution containing an organic compound as an agent using a printing method, etc. Methods such as heat treatment to form an oxide film are employed.

しかしながら.(1)の方法では.真空系の高価な装置
が必要であシ,バッチ処理のため生産性が悪い欠点があ
った。1た(2)の方法として,従来.ハロゲン化シラ
ン.アルコキシシラン等の溶液もしくはその部分加水分
解物を基体上に塗布し,焼成してシリカ系の被膜を形威
する方法は良く知られてkシt%公昭52−16488
号公報,同52−2 0 82 5号公報,特開昭55
−34258号公報等に提案されている。しかし,ハロ
ゲン化シランを用いる方法によれば,加水分解によって
ハロゲン化水素が発生し.系が強い酸性となるため反応
のコントロールが非常に困難である。筐た,生成物にハ
ロゲン化水素が多量に残存するため,液の安定性が損な
われる他,液晶表示素子等に用いた場合.素子の耐湿信
頼性が著(7〈低下するという欠点を有する。一方アル
コキシシランとしては従来エトキシシラン等の炭素数4
以下のアルコキシシランが用いられて来たが.これらの
系では加水分解反応後に炭素数4以下のアルコール及び
筐たぱアルコール誘導体が生底するため,液の粘度が低
く.1た揮発性が高くなう,増粘剤を加えなければ印刷
法による塗布を行うことが出来なかった。これを改良す
る方法として.炭素数5以上のアルコキシ基を有するア
ルコキシシランを用いル方法や,炭素数4以下のアルコ
キシシランで加水分解を行った後生成する炭素数4以下
のアルコールを減圧下に除去する方法等が考えられる。
however. In method (1). It required expensive vacuum equipment and had the disadvantage of poor productivity due to batch processing. As method 1 and (2), conventional method. Halogenated silane. The method of coating a solution of alkoxysilane or its partially hydrolyzed product on a substrate and baking it to form a silica-based film is well known.
Publication No. 52-20825, Japanese Unexamined Patent Publication No. 1982
This method has been proposed in, for example, Japanese Patent No.-34258. However, with the method using halogenated silanes, hydrogen halides are generated by hydrolysis. Controlling the reaction is extremely difficult because the system becomes strongly acidic. A large amount of hydrogen halide remains in the product, which impairs the stability of the liquid, and when used in liquid crystal display devices, etc. It has the disadvantage that the moisture resistance reliability of the element is significantly reduced (7).On the other hand, as alkoxysilane, conventional
The following alkoxysilanes have been used. In these systems, alcohols with carbon numbers of 4 or less and katap alcohol derivatives form a raw bottom after the hydrolysis reaction, so the viscosity of the liquid is low. 1) Application by printing method could not be carried out without adding a thickener, which increases volatility. As a way to improve this. Possible methods include a method using an alkoxysilane having an alkoxy group with a carbon number of 5 or more, and a method in which alcohol with a carbon number of 4 or less produced after hydrolysis with an alkoxysilane with a carbon number of 4 or less is removed under reduced pressure. .

しかし,前者は炭素数5以上のアルコキシシラン化合物
が非常に高い沸点を有するため.生成が困難である欠点
を有し,捷た後者ではアルコール除去の際,加水分解物
の縮合が進行して高分子量化し.液安定性が著しく低下
する欠点があう実用化が困難であった。
However, the former is because alkoxysilane compounds with 5 or more carbon atoms have extremely high boiling points. It has the disadvantage that it is difficult to produce, and in the case of the latter, when the alcohol is removed, the hydrolyzate condenses and becomes high in molecular weight. It has been difficult to put this into practical use due to the drawback of significantly reduced liquid stability.

(発明が解決しようとする課題) 本発明は.これら従来技術の欠点を改良し,印刷法によ
シ塗布可能な高粘度.低揮発性のシリカ系被膜形成用塗
布液を用いて絶縁性に優れた保護被膜を透明電極上に形
成し.信頼性の高い液晶挾持基板,この製造法釦よびこ
れを用いた液晶表示素子を容易に得ることを目的として
なされたものである。
(Problem to be solved by the invention) The present invention. This product has a high viscosity that can be coated by printing method and improves the shortcomings of these conventional technologies. A protective film with excellent insulation properties is formed on the transparent electrode using a low-volatile silica-based coating liquid. The purpose of this invention is to easily obtain a highly reliable liquid crystal holding substrate, a button manufactured using the same, and a liquid crystal display element using the same.

(Ill題を解決するための手段》 すなわち本発明は,透明電極を有する基板上に一般式A
) R’n S i(O R )4 − n       
  A)(式中R′は炭素数1〜4のアルキル基.Rは
炭素数1〜4のアルキル基及び/1たはアセチル基.n
は0〜3の整数を示す) で表される珪素化合物と.炭素数5以上のアルコール及
び/筐たぱその誘導体とを触媒の存在下で反応させ.生
成する炭素数4以下のアルコール及び/オたはその誘導
体を系外へ除去した後.水を加えて加水分解,縮合して
得られたシリカ系被膜形成用組成物を塗布,硬化して絶
縁膜を形成した本発明のシリカ系被膜形成用塗布液の製
造に用いる上記の一般式A)で表される珪素化合物とし
ては.テトラメトキシシラン,テトラエトキシシラン.
テトライソプ口ボキシシラン,テトラプトキシシラン等
のテトラアルコキシシラン,メチルトリメトキシシラン
.エチルトリエトキシシラン.メチルトリイソプロボキ
シシラン,メチルトリブトキシシラン等のアルキルトリ
アルコキシシラン.ジメチルジメトコキシラン,ジメチ
ルジエトキシシラン.ジエチルジイソプロボキシシ2ン
.ジエチルジブトキシシラン等のジアルキルジアルコキ
ン7ラン,テトラアセトキシシラン,メチルトリアセト
キシシラン,エチルトリアセトキシシラン,ジメチルジ
アセトキシシラン等のアルキルアセトキシシラン等の一
種″!たぱ二種以上が用いられる。
(Means for Solving Problem Ill) In other words, the present invention provides a structure in which the general formula A is formed on a substrate having a transparent electrode.
) R'n Si(OR)4-n
A) (In the formula, R' is an alkyl group having 1 to 4 carbon atoms.R is an alkyl group having 1 to 4 carbon atoms and /1 or an acetyl group.n
represents an integer from 0 to 3). An alcohol having 5 or more carbon atoms and/or a derivative of Kakitapaso are reacted in the presence of a catalyst. After removing the produced alcohol and/or its derivatives having 4 or less carbon atoms from the system. The above general formula A used for producing the coating liquid for forming a silica-based film of the present invention, in which an insulating film is formed by coating and curing a silica-based film-forming composition obtained by adding water and hydrolyzing and condensing the composition. ) is a silicon compound represented by. Tetramethoxysilane, tetraethoxysilane.
Tetraalkoxysilanes such as tetraboxysilane and tetraptoxysilane, and methyltrimethoxysilane. Ethyltriethoxysilane. Alkyltrialkoxysilanes such as methyltriisoproboxysilane and methyltributoxysilane. Dimethyldimethoxylane, dimethyldiethoxysilane. Diethyl diisoproboxylene. Two or more types of dialkyldialcoquine 7ranes such as diethyldibutoxysilane, alkylacetoxysilanes such as tetraacetoxysilane, methyltriacetoxysilane, ethyltriacetoxysilane, and dimethyldiacetoxysilane are used.

筐た.炭素数5以上のアルコール及びその誘導体として
は,エチレングリコールモノブチルエーテル,エチレン
グリコールモノヘキシルエーテル,エチレンクリコール
モノ−2−エチルヘキシルエーテル,エチレングリコー
ルモノフエニルエーテル,エチレングリコールインアミ
ルエーテル,プロピレングリコールモノプロビルエーテ
ル.プロビレングリコールモノブチルエーテル.プロピ
レングリコールモノフエニルエーテル,ジエチレングリ
コールモノメチルエーテル,ジエチレングリコール七ノ
エチルエーテル.ジエチレングリコールモノフ゜チルエ
ーテル.シエチレングリコールモノブロビルエーテル,
ジエチレングリコールモノイソプチルエーテル,ジエチ
レングリコールモノヘキシルエーテル,トリエチレング
リコールモノメチルエーテル,トリエチレングリコール
モノブチルエーテル,ジプロピレングリコールモノメチ
ルエーテル,ジプロピレングリコールモノブロビルエー
テル,ヘキシレングリコール,17エチレングリコール
等の化合物の−alフたけ二種以上が用いられる。
It was a cabinet. Examples of alcohols having 5 or more carbon atoms and their derivatives include ethylene glycol monobutyl ether, ethylene glycol monohexyl ether, ethylene glycol mono-2-ethylhexyl ether, ethylene glycol monophenyl ether, ethylene glycol in amyl ether, and propylene glycol monopropyl ether. ether. Probylene glycol monobutyl ether. Propylene glycol monophenyl ether, diethylene glycol monomethyl ether, diethylene glycol heptanoethyl ether. Diethylene glycol monophthyl ether. cyethylene glycol monobrobyl ether,
-Al fluoride of compounds such as diethylene glycol monoisobutyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, triethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monobrobyl ether, hexylene glycol, 17 ethylene glycol, etc. Two or more types are used.

炭素数5以上のアルコール及び/又はその誘導体は,印
刷性を良好とするため粘度が20℃で3センチボイズ以
上であることが好1しい。この粘度が3センチポイズ未
満であれば,印刷塗布時にハジキが出易くなる。1た,
炭素数5以上のアルコール及び/又はその誘導体は,基
体上での組成物の乾きを防止するため,沸点が常圧で1
00℃以上であることが好壕しい。沸点が常圧で100
℃未満では.基体上での乾燥物の生成による異物付着.
組成物の溶解度変化による塗布膜厚の変化等が起こシや
すくなる。よυ好壕し〈は.粘度が20℃で3センチボ
イズ以上で,沸点が常圧で100℃以上の炭素数5以上
のアルコールとされる。
The alcohol having 5 or more carbon atoms and/or its derivative preferably has a viscosity of 3 centivoise or more at 20° C. in order to improve printability. If this viscosity is less than 3 centipoise, repellency is likely to occur during printing and coating. 1,
In order to prevent the composition from drying out on the substrate, the alcohol having 5 or more carbon atoms and/or its derivatives should have a boiling point of 1 at normal pressure.
Preferably, the temperature is 00°C or higher. Boiling point is 100 at normal pressure
Below ℃. Foreign matter adhesion due to the formation of dry matter on the substrate.
Changes in coating film thickness due to changes in the solubility of the composition are likely to occur. It's a good shelter. It is an alcohol with 5 or more carbon atoms and a viscosity of 3 centiboise or more at 20°C and a boiling point of 100°C or more at normal pressure.

本発明のシリカ系被膜形成用塗布液の製造時に,エステ
ル交換反応に用いられる触媒とj一では,硝酸,硫酸,
燐酸等の無機酸,シュウ酸,マレイン酸,酢酸等の有機
酸などが用いられるが.これらに制限するものではない
When producing the coating solution for forming a silica-based film of the present invention, the catalysts used for the transesterification reaction include nitric acid, sulfuric acid,
Inorganic acids such as phosphoric acid and organic acids such as oxalic acid, maleic acid, and acetic acid are used. It is not limited to these.

次に本発明のシリカ系被膜形成用塗布液の製造において
,反応方法としては,筐ず上記の珪素化合物と炭素数5
以上のアルコール及び/1たはアルコール誘導体とを混
合し.触媒を加えて加熱する。この際,アルコール及び
/″!!たはアルコール誘導体の添加量は珪素化合物の
置換可能なアルコキシ基及び/捷たはアルキルエステル
基に対し好プし<d2倍当量以上.よシ好筐し〈に4倍
当量以上であう.触媒の添加量は上記の珪素化合物に対
し0. 1〜2重量多の範囲が好筐しい。オた.反応温
度は交換反応によって生威する炭素数4以下のアルコー
ル及び/筐たはアルコール誘導体を系外へ除去するため
.それらの沸点以上の温度とすることが好1しい。上記
交換反応によって生底した炭素数4以下の溶媒の除去は
,完全に行うことが好1しいが,加水分解後に得られる
塗布液の粘度を10センチポイズ以下にしない範囲で残
存していでも差し支えない。
Next, in the production of the coating liquid for forming a silica-based film of the present invention, the reaction method is as follows:
Mix the above alcohol and/or alcohol derivative. Add catalyst and heat. At this time, the amount of alcohol and /''!! or alcohol derivative added should be preferably <d2 times equivalent or more with respect to the substitutable alkoxy group and/or alkyl ester group of the silicon compound. The amount of the catalyst to be added is preferably 0.1 to 2 times more by weight than the silicon compound mentioned above.The reaction temperature is set at an alcohol with 4 or less carbon atoms that can be produced by exchange reaction. In order to remove the alcohol derivatives from the system.The temperature is preferably higher than their boiling points.The solvent having 4 or less carbon atoms formed as a raw bottom by the above exchange reaction must be completely removed. Although it is preferable that it remains in the coating solution obtained after hydrolysis, it may remain in the range that does not reduce the viscosity of the coating solution to 10 centipoise or less.

交換反応後,水と必要に応じて他の溶媒を加えて加水分
解,縮合を行う。この際.添加する水の量は珪素化合物
の加水分解可能な基に対して,当量もしくはその80〜
100当量嘩が好1しい。
After the exchange reaction, water and other solvents are added as necessary to perform hydrolysis and condensation. On this occasion. The amount of water to be added is equivalent to the hydrolyzable group of the silicon compound, or 80 to 80% thereof.
100 equivalents are preferred.

1た,加水分解反応の反応温度にVi特に制限はないが
,反応を促進するため50〜100℃に加熱することが
好壕しい。必要に応じて加える他の溶媒としては,前述
した炭素数5以上の溶媒が好iしい。
Although there is no particular restriction on the reaction temperature of the hydrolysis reaction, it is preferable to heat it to 50 to 100°C to accelerate the reaction. As other solvents that may be added as necessary, the aforementioned solvents having 5 or more carbon atoms are preferred.

本発明の液晶挾持基板は.透明電極のパターンが形成さ
れた基板上に上記のシリカ系被膜形成用組成物を,ロー
ルコータ,プレードコータ等の印刷機を用いて塗布した
後,100〜200℃好!し<Vi120〜180℃の
温度で乾燥し.200〜500℃好筐しくは300〜4
00℃の温度で硬化してシリカ系被膜を形成し,その上
に配向膜用樹脂を塗布,硬化して得られる。この際,シ
リ力系被膜の膜厚ii500〜2000Aが好1しし。
The liquid crystal holding substrate of the present invention is. After applying the above-mentioned composition for forming a silica-based film onto a substrate on which a pattern of transparent electrodes has been formed using a printing machine such as a roll coater or a blade coater, it is heated to a temperature of 100 to 200°C. Dry at a temperature of 120 to 180°C. 200~500℃ preferably 300~4
It is obtained by curing at a temperature of 00° C. to form a silica-based film, and applying a resin for alignment film thereon and curing it. At this time, it is preferable that the film thickness of the silicate film is 500 to 2000 A.

500Aよシ薄いと導通不良の防止効果が十分得られず
,甘た2 0 0 0Aより厚いと配向特性を悪化させ
る。
If it is thinner than 500A, the effect of preventing poor conduction cannot be obtained sufficiently, and if it is thicker than 2000A, the alignment characteristics will deteriorate.

配向膜用樹脂としては.ポリイミド,ポリアミドイミド
.ポリエーテルイミド,ポリエステルイミド等のポリイ
ミド系樹脂が好筐しいが,ポリビニルアルコール,ポリ
ビニルアセタール等の樹脂の他.膜形成可能な種々の高
分子樹脂も使用可能である。
As a resin for alignment film. Polyimide, polyamideimide. Polyimide resins such as polyetherimide and polyesterimide are suitable, but other resins such as polyvinyl alcohol and polyvinyl acetal are also suitable. Various film-forming polymeric resins can also be used.

本発明の液晶挾持基板は,公知の方法によシ配向膜のラ
ピングを行った後,ギャップ材を分散したシール材では
シあわせ,液晶を注入.封止して液晶表示素子とされる
The liquid crystal holding substrate of the present invention is produced by wrapping an alignment film using a known method, then sealing with a sealant containing a gap material dispersed therein, and then injecting liquid crystal. It is sealed to form a liquid crystal display element.

(実施例) 以下,実施例を用いて本発明をよシ具体的に説明する。(Example) The present invention will be explained in more detail below using examples.

実施例1 A)シリカ系被膜形成用組成物の作製 温度計.分流管付きコンデンサー,かくはん機を備えた
四つロフラスコにテトラエトキシシラン5 2. 1 
g, ヘキ’/ レ7fリコール29 6.4 9+燐
酸0.6gを仕込み,かくはんしながらオイルバスを用
いて100℃に加熱した。約1時間後分流管でエチルア
ルコールの還流がおこシ,還流温度が約80℃になった
ところでエチルアルコールの回収を始めた。5時間後.
45gのエチルアルコールを回収したところでガスクロ
マトグラフを測定したところ,テトラエトキシシランの
消失とヘキシレングリコールの反応物の生成が確認され
た。
Example 1 A) Preparation of silica-based film forming composition Thermometer. 5. Tetraethoxysilane in a four-loop flask equipped with a condenser and a stirrer with a flow divider 2. 1
g, Heki'/Re7f Recall 29 6.4 9 + 0.6 g of phosphoric acid was charged and heated to 100° C. using an oil bath while stirring. After about 1 hour, reflux of ethyl alcohol occurred in the separation tube, and when the reflux temperature reached about 80°C, recovery of ethyl alcohol was started. 5 hours later.
When 45 g of ethyl alcohol was recovered, gas chromatography measurements confirmed the disappearance of tetraethoxysilane and the formation of a reaction product of hexylene glycol.

次に反応液を室温1で冷却し.イオン交換水17.69
を滴下した後.60℃で5時間反応させシリカ系被膜形
成用組成物を得た。こうして得られた組成物の濃度を2
00℃/2時間の乾燥残差として測定したところ.5.
0重i1%であった。筐た粘度を25℃でウベローデ粘
度計を用いて測定したところ,30センチストークス(
 0. 3 cm”/ s lであった。
Next, the reaction solution was cooled to room temperature 1. Ion exchange water 17.69
After dripping. The mixture was reacted at 60° C. for 5 hours to obtain a silica-based film forming composition. The concentration of the composition thus obtained is 2
Measured as drying residual at 00°C/2 hours. 5.
It was 0 weight i1%. The viscosity of the casing was measured at 25°C using an Ubbelohde viscometer, and it was found to be 30 centistokes (
0. 3 cm”/sl.

B)液晶挾持基板の作製と評価 640X200ドットの透明電極パターンを形威した3
00X150mmのガラス基板上に, Alで得たシリ
カ系被膜形成用組底物をロールコータを用いて塗布し,
150℃/1時間乾燥した後.300℃/1時間硬化し
シリカ系被膜を形成した。
B) Fabrication and evaluation of liquid crystal holding substrate 3 with a transparent electrode pattern of 640 x 200 dots
On a glass substrate of 00 x 150 mm, a silica-based coating formed from Al was applied using a roll coater.
After drying at 150°C for 1 hour. It was cured at 300° C. for 1 hour to form a silica-based film.

得られた被膜の厚みをタリステップ(ランクテーラホブ
ソン社製)で測定したところIIOOAで.ハジキ等の
欠陥は見られなかった。
The thickness of the obtained film was measured using Talystep (manufactured by Rank Taylor Hobson) and was found to be IIOOA. No defects such as cissing were observed.

次に該被膜上に再びロールコータを用いて.ボjイミド
系液晶配向膜材LQ−1800(日立化威工業株式会社
製.樹脂分濃度7重量%)を塗布し.150℃/30分
乾燥した後.300℃/1時間硬化しsoo′kの配向
膜を形威し液晶挾持基板を得た。
Next, use the roll coater again on the film. Boimide liquid crystal alignment film material LQ-1800 (manufactured by Hitachi Chemical Co., Ltd., resin concentration 7% by weight) was applied. After drying at 150°C for 30 minutes. The film was cured at 300° C. for 1 hour to form a soo'k alignment film, and a liquid crystal holding substrate was obtained.

こうして得られた蔽晶挾持基板を従来公知の方法でラビ
ングし.210’ツイストする様にエボキシ系ンール剤
EN−1000(日立化或工業株式会社製)ではりあわ
せ,液晶ZLI−1132(メルク社!!!)を封入し
て液晶表示セルを作製した。次に該液晶表示セルに直流
電源を用いて電.圧印加し.その時の配向状態を目祝で
観察した。その結果.上下基板の導通による配向不良は
見られなかった。
The thus obtained shielding crystal holding substrate was rubbed by a conventionally known method. They were laminated with epoxy resin EN-1000 (manufactured by Hitachi Chemical Co., Ltd.) in a 210' twist, and a liquid crystal ZLI-1132 (manufactured by Merck & Co., Ltd.!!!) was sealed to prepare a liquid crystal display cell. Next, power is applied to the liquid crystal display cell using a DC power source. Apply pressure. The orientation state at that time was visually observed. the result. No alignment defects due to conduction between the upper and lower substrates were observed.

(発明の効果) 本発明によれば.印刷法によってもシリカ系絶縁膜を形
成した液晶挾持基板を容易に得られる。
(Effect of the invention) According to the present invention. A liquid crystal holding substrate on which a silica-based insulating film is formed can also be easily obtained by a printing method.

従って,こうして得られた液晶挾持基板を用いることに
より.安価で高信頼性の液晶表示素子を製造することが
可能となる。
Therefore, by using the liquid crystal holding substrate obtained in this way. It becomes possible to manufacture inexpensive and highly reliable liquid crystal display elements.

Claims (1)

【特許請求の範囲】 1、透明電極を有する基板上に 一般式A) R′_nSi(OR)_4_−_nA) (式中R′は炭素数1〜4のアルキル基、Rは炭素数1
〜4のアルキル基及び/またはアセチル基、nは0〜3
の整数を示す) で表される珪素化合物と、炭素数5以上のアルコール及
び/またはその誘導体とを触媒の存在下で反応させ、生
成する炭素数4以下のアルコール及び/またはその誘導
体を系外へ除去した後、水を加えて加水分解、縮合して
得られたシリカ系被膜形成用組成物を塗布、硬化して絶
縁膜を形成した後、その上に配向膜を形成した液晶表示
素子用の液晶挾持基板。 2、透明電極を有する基板上に、請求項1記載のシリカ
系被膜形成用組成物を印刷法で塗布する請求項1記載の
液晶挾持基板の製造方法。 3、配向膜がポリイミド系配向膜である請求項1記載の
液晶表示素子用の液晶挾持基板。 4、透明電極を有する基板上に、請求項1記載のシリカ
系被膜形成用組成物を印刷法で塗布、硬化して絶縁膜を
形成した後、その上にポリイミド系配向膜を形成する液
晶挾持基板の製造方法。 5、請求項1記載の液晶挾持基板を用いて得られる液晶
表示素子。
[Claims] 1. On a substrate having a transparent electrode, the general formula A) R'_nSi(OR)_4_-_nA) (wherein R' is an alkyl group having 1 to 4 carbon atoms, and R is an alkyl group having 1 carbon number)
-4 alkyl groups and/or acetyl groups, n is 0-3
(representing an integer of A composition for liquid crystal display elements in which an insulating film is formed by applying and curing a silica-based film-forming composition obtained by adding water, hydrolyzing and condensing, and then forming an alignment film thereon. LCD holding board. 2. The method for producing a liquid crystal holding substrate according to claim 1, wherein the silica film-forming composition according to claim 1 is applied by a printing method onto a substrate having a transparent electrode. 3. A liquid crystal holding substrate for a liquid crystal display element according to claim 1, wherein the alignment film is a polyimide alignment film. 4. A liquid crystal sandwiching method in which the composition for forming a silica-based film according to claim 1 is coated and cured by a printing method on a substrate having a transparent electrode to form an insulating film, and then a polyimide-based alignment film is formed thereon. Substrate manufacturing method. 5. A liquid crystal display element obtained using the liquid crystal holding substrate according to claim 1.
JP30788489A 1989-11-28 1989-11-28 Liquid crystal holding substrate, production thereof and liquid crystal display device Pending JPH03167523A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30788489A JPH03167523A (en) 1989-11-28 1989-11-28 Liquid crystal holding substrate, production thereof and liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30788489A JPH03167523A (en) 1989-11-28 1989-11-28 Liquid crystal holding substrate, production thereof and liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH03167523A true JPH03167523A (en) 1991-07-19

Family

ID=17974324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30788489A Pending JPH03167523A (en) 1989-11-28 1989-11-28 Liquid crystal holding substrate, production thereof and liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH03167523A (en)

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