JPH03165535A - Lead height detector - Google Patents

Lead height detector

Info

Publication number
JPH03165535A
JPH03165535A JP30562289A JP30562289A JPH03165535A JP H03165535 A JPH03165535 A JP H03165535A JP 30562289 A JP30562289 A JP 30562289A JP 30562289 A JP30562289 A JP 30562289A JP H03165535 A JPH03165535 A JP H03165535A
Authority
JP
Japan
Prior art keywords
laser beam
lead
height
cylindrical lens
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30562289A
Other languages
Japanese (ja)
Other versions
JPH0756876B2 (en
Inventor
Masao Kinoshita
雅夫 木下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1305622A priority Critical patent/JPH0756876B2/en
Publication of JPH03165535A publication Critical patent/JPH03165535A/en
Publication of JPH0756876B2 publication Critical patent/JPH0756876B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

PURPOSE:To enhance the efficiency and accuracy of measurement by a method wherein the reflected light of a laser beam from each lead of a semiconductor element is condensed on a one-dimensional sensor by two cylindrical lenses. CONSTITUTION:A laser beam 2a is rotationally scanned by a galvanomirror 3 and reflected light 2b from individual leads 21 of a semiconductor device 20 is condensed by two cylindrical lenses 5 and 6 provided in such a way that the directions of the radii of curvature of the convex surfaces of the lenses 5 and 6 intersect orthogonally each other, is imaged on a one-dimensional sensor 7 as a beam spot 7a and is condensed on one point. A fine spot condensed on leads of an abnormal height is imaged at a position lower than that of the beam spot 7a to be imaged when the height of leads is a normal height. Thereby, the height of the individual leads can be measured at high speed and with high accuracy.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はリード高さ検出装置、特に、複数本のリードを
有する半導体素子のリード高さの検出に適用しうるリー
ド高さ検出装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead height detection device, and more particularly to a lead height detection device that can be applied to detecting the lead height of a semiconductor element having a plurality of leads.

〔従来の技術〕[Conventional technology]

一般に、半導体素子は第3図(a)に示すように半導体
ペレットを封止したパッケージ22に外部配線のための
リード21が複数設けられた構造をしている。このリー
ド21がプリント回路基板などの電極にハンダ付により
接続固定される。その時、第1図(b)に示すようにリ
ード2Iの一部が折れ曲がったりして、リード21aや
21bに示すように変形して高さが不均一になっている
と熔融したハンダが十分に流れ込まず正常なハンダ付が
できなくなる。従って、リード21の高さを測定して不
良を検出しτ矯正する必要がある。
Generally, a semiconductor element has a structure in which a plurality of leads 21 for external wiring are provided in a package 22 in which a semiconductor pellet is sealed, as shown in FIG. 3(a). This lead 21 is connected and fixed to an electrode of a printed circuit board or the like by soldering. At that time, if a part of the lead 2I is bent as shown in FIG. 1(b), and the leads 21a and 21b are deformed and have uneven heights, the melted solder may not be absorbed sufficiently. It will not flow and normal soldering will not be possible. Therefore, it is necessary to measure the height of the lead 21 to detect defects and correct τ.

従来、このリード高さの測定は顕微鏡や拡大投影機など
を使用して目視作業により行われていた。
Conventionally, the lead height has been measured visually using a microscope, a magnifying projector, or the like.

そのため、作業に多大な時間と労力を要し、しかも、目
視による判断であるので判断基準にばらつきが生じて測
定精度の向上には限界があった。
Therefore, the work requires a great deal of time and effort, and since the judgment is performed visually, there are variations in the judgment criteria, which limits the improvement of measurement accuracy.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のリード高さの測定は目視作業となってい
るので、作業に多大の時間と労力がかかり能率が悪く、
判断基準にばらつきがあるので測定精度が悪いという°
欠点があった。
The conventional lead height measurement described above is a visual process, which takes a lot of time and effort and is inefficient.
Measurement accuracy is said to be poor due to variations in judgment criteria.
There were drawbacks.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のリード高さ検出装置は第1のレーザ光を出射す
るレーザ装置と、前記第1のレーザ光を一方向に走査す
るミラーと、前記走査された第1のレーザ光を集光して
半導体素子のリードに斜角より平行に第2のレーザ光を
走査する投光レンズと、前記第2のレーザ光が前記リー
ドで反射して得られた第3のレーザ光の走査方向と凸面
の曲率半径の方向を直交して設けられた第1のシリンド
リカルレンズと、前記第3のレーザ光が前記第1のシリ
ンドリカルレンズを通過して得られた第4のレーザ光の
走査方向と凸面の曲率半径の方向を、平行にして設けら
れた第2のシリンドリカルレンズ−と、前記第4のレー
ザ光が前記第2のシリンドリカルレンズで集光して得ら
れたビームスポットを受光してその位置を検出する一次
元センサを含んで構成される。
The lead height detection device of the present invention includes a laser device that emits a first laser beam, a mirror that scans the first laser beam in one direction, and a mirror that focuses the scanned first laser beam. A projection lens that scans a second laser beam parallel to the leads of the semiconductor element at an oblique angle, and a scanning direction of a third laser beam obtained by reflecting the second laser beam on the leads, and a convex surface. A first cylindrical lens provided perpendicular to the direction of the radius of curvature, and the scanning direction of the fourth laser beam obtained by the third laser beam passing through the first cylindrical lens and the curvature of the convex surface. A second cylindrical lens provided with radial directions parallel to each other, and a beam spot obtained by converging the fourth laser beam with the second cylindrical lens is received and the position thereof is detected. It consists of a one-dimensional sensor.

〔実施例〕〔Example〕

次に、本発明の実施例について、図面を参照して詳細に
説明する。
Next, embodiments of the present invention will be described in detail with reference to the drawings.

第1図は、本発明の一実施例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.

第1図に示すリード高さ測定装置は、レーザ光2を出射
するレーザ装置1と、レーザ光2を一方向に走査するガ
ルバノミラ−3と、ガルバノミラ−3の走査の中心に一
方の焦点を合せて設けられ走査されたレーザ光2をほぼ
45°の角度で半導体素子20のリード21にレーザ光
2aとして入射させリード21にスポット状に焦点を結
ばせる投光レンズ4と、それぞれのリード21から反射
したレーザ光2bを入射しレーザ光2bの走査方向と直
角に凸面の曲率半径の方向を向けて設けられたシリンド
リカルレンズ5と、シリンドリカルレンズ5を透過して
得られたレーザ光2cを入射しレーザ光2cの走査方向
と平行に凸面の曲率半径の方向を向けて設けられたシリ
ンドリカルレンズ6と、シリンドリカルレンズ6の焦点
位置に設けられシリンドリカルレンズ6を透過して得ら
れたレーザ光2dが結像したビームスボッ)7aの位置
を検出する1次元センサ7とから構成されている。
The lead height measuring device shown in FIG. 1 includes a laser device 1 that emits a laser beam 2, a galvanometer mirror 3 that scans the laser beam 2 in one direction, and one focus on the center of scanning of the galvanometer mirror 3. A projection lens 4 that makes the scanned laser beam 2 incident on the leads 21 of the semiconductor element 20 at an angle of approximately 45° and focuses it on the leads 21 in a spot shape; The reflected laser beam 2b is incident on a cylindrical lens 5 provided with the radius of curvature of the convex surface oriented perpendicular to the scanning direction of the laser beam 2b, and the laser beam 2c obtained by passing through the cylindrical lens 5 is incident on the cylindrical lens 5. A cylindrical lens 6 provided with the radius of curvature of the convex surface oriented parallel to the scanning direction of the laser beam 2c and a laser beam 2d obtained by passing through the cylindrical lens 6 provided at the focal position of the cylindrical lens 6 are combined. It consists of a one-dimensional sensor 7 that detects the position of the imaged beam spot 7a.

次に、第2図を併せて参照しながら動作を説明する。Next, the operation will be explained with reference to FIG. 2.

レーザ装置1から出射されたレーザ光2は、ガルバノミ
ラ−3により一方向に走査され、走査の中心が投光レン
ズ4の焦点の位置にあるため、投光レンズ4を通過した
会レーザ光2aは収束されて平行に走査される。この収
束されて平行に走査されたレーザ光2aは、投光レンズ
4の焦点位置に設置された半導体素子20のリード21
にほぼ45°の角度で照射さ九るのでリード21上で微
小スポットに集光し、リード21の表面は鏡面状に近い
ため、表面で正反射される。
The laser beam 2 emitted from the laser device 1 is scanned in one direction by the galvanometer mirror 3, and the center of scanning is at the focal point of the projection lens 4, so the laser beam 2a that has passed through the projection lens 4 is Converged and scanned in parallel. This converged and parallel scanned laser beam 2a is transmitted to the lead 21 of the semiconductor element 20 installed at the focal position of the projection lens 4.
Since the light is irradiated at an angle of approximately 45 degrees, the light is focused on a minute spot on the lead 21, and since the surface of the lead 21 is nearly mirror-like, it is regularly reflected by the surface.

反射したレーザ光2bについては、正常なリードからの
反射と高さが変形して正常でないリードからの反射に分
けて説明する。
The reflected laser beam 2b will be explained separately as reflection from a normal lead and reflection from a lead whose height is deformed and is not normal.

まず、正常でないリードから反射したレーザ光2bにつ
いて考えると、第2図に示すように正常でない高さのり
−ド21a上に集光された微小スポットは、反射してレ
ーザ光12bとなる。このレーザ光12bは、シリンド
リカルレンズ5の凸面により屈折しレーザ光12cとな
り、シリンドリカルレンズ6を通過し1次元センサ7上
に結像され1次元センサ7に配線された位置演算回路(
図示せず)により位置が検出される。このように、1次
元センサー7上に結像したビームスポット17aは、リ
ード21が正常な高さのときに結像されるビームスボッ
)7aより下の位置に結像されているのでリード21a
が正常な高さでないことが検出される。
First, considering the laser beam 2b reflected from the abnormal lead, as shown in FIG. 2, the minute spot focused on the abnormal height lead 21a is reflected and becomes the laser beam 12b. This laser beam 12b is refracted by the convex surface of the cylindrical lens 5 to become a laser beam 12c, which passes through the cylindrical lens 6 and is imaged on the one-dimensional sensor 7.The position calculation circuit (
(not shown) to detect the position. In this way, the beam spot 17a formed on the one-dimensional sensor 7 is focused at a position below the beam spot 7a that is formed when the lead 21 is at a normal height, so the beam spot 17a is focused on the lead 21a.
It is detected that the height is not normal.

次に、正常なリードから反射したレーザ光2bについて
考えると、第1図に示すように正常な高さのり−ド21
から反射したレーザ光2bはそれ自体拡散光となるが平
行に走査される状態を保っている。シリンドリカルレン
ズ5はレーー;光2bの走査方向と凸面の曲率半径が直
交しているのでレーザ光2bはそのまま通過しそれ自体
平光に走査されたレーザ光2cとなる。次に、シリンド
リカルレンズ6は凸面の曲率半径の方向がレーザ光2c
の走査方向と平行なので屈折され、シリンドリカルレン
ズ6の焦点に設けられた1次元センサ7上で走査に関係
なく1点に集められることになる。すなわち、第2図に
示すように半導体素子20の各リード21からの正反射
光は、1次元センサ7上ではビームスボッドアaとして
結像し1点に集められることになる。
Next, considering the laser beam 2b reflected from a normal lead, as shown in FIG.
The laser beam 2b reflected from the laser beam itself becomes a diffused beam, but remains scanned in parallel. The cylindrical lens 5 is a laser; since the scanning direction of the light 2b and the radius of curvature of the convex surface are perpendicular to each other, the laser light 2b passes through as it is and becomes the laser light 2c which is itself scanned into a flat light. Next, the direction of the radius of curvature of the convex surface of the cylindrical lens 6 is the direction of the laser beam 2c.
Since the beam is parallel to the scanning direction, it is refracted and focused on one point on the one-dimensional sensor 7 provided at the focal point of the cylindrical lens 6 regardless of scanning. That is, as shown in FIG. 2, specularly reflected light from each lead 21 of the semiconductor element 20 forms an image as a beam spot a on the one-dimensional sensor 7 and is focused at one point.

以上説明したように、レーザ光をガルバノミラ−により
回転走査し、半導体素子の各リードからの反射光を2個
の互に凸面の曲率半径の方向が直交して設けたシリンド
リカルレンズで集光して1次元センサ上に結像するので
、各リードの高さを高速で、高精度に測定することがで
きる。
As explained above, the laser beam is rotated and scanned by a galvanometer mirror, and the reflected light from each lead of the semiconductor element is focused by two cylindrical lenses whose radii of curvature of the convex surfaces are orthogonal to each other. Since the image is formed on a one-dimensional sensor, the height of each lead can be measured at high speed and with high precision.

なお、上記説明においてレーザ光を回転走査させるもの
として、ガルバノミラ−を用いて説明したが、ポリゴン
ミラー等地の方式を用いても同じに実施することができ
る。
In the above description, a galvanometer mirror was used to rotate and scan the laser beam, but the same implementation can be achieved by using a method such as a polygon mirror.

〔発明の効果〕〔Effect of the invention〕

本発明のリード高さ検出装置は、目視作業の代りに、レ
ーザ光を回転走査し半導体素子の各リードからの反射光
を互に凸面の曲率半径の方向を直交して設けた2個のシ
リンドリカルレンズで一次元センサ上に集めることによ
り、各リードの正常と異常の高さを検出することができ
るため、リード高さの測定の能率が向上でき、また、測
定の精度も高くできるという効果がある。
The lead height detection device of the present invention rotates and scans a laser beam, instead of visual inspection, and detects the reflected light from each lead of a semiconductor element by using two cylindrical plates arranged so that the directions of the radius of curvature of the convex surfaces are orthogonal to each other. The normal and abnormal heights of each lead can be detected by focusing them on a one-dimensional sensor using a lens, which improves the efficiency of lead height measurement and also increases the accuracy of measurement. be.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す斜視図、第2図は第1
図に示す実施例の動作を説明するための斜視図、第3図
(a)、 (b)は第1図に示す半導体素子の斜視図と
一部破断側面図である。 l・・・・・・レーザ装置、2・・・・・・レーザ光、
3・・・・・・ガルバノミラ−4・・・・・・投光レン
ズ、5,6・・・・・・シリンドリカルレンズ、7・・
・・・・1次元センサ、7a。 17a・・・・・・ビームスポット、20・・・・・・
半導体素子、21・・・・・・リード。
FIG. 1 is a perspective view showing one embodiment of the present invention, and FIG. 2 is a perspective view showing one embodiment of the present invention.
FIGS. 3(a) and 3(b) are a perspective view and a partially cutaway side view of the semiconductor element shown in FIG. 1, respectively, for explaining the operation of the embodiment shown in the figure. l... Laser device, 2... Laser light,
3... Galvano mirror 4... Light projection lens, 5, 6... Cylindrical lens, 7...
...One-dimensional sensor, 7a. 17a...Beam spot, 20...
Semiconductor element, 21...Lead.

Claims (1)

【特許請求の範囲】[Claims] 第1のレーザ光を出射するレーザ装置と、前記第1のレ
ーザ光を一方向に走査するミラーと、前記走査された第
1のレーザ光を集光して半導体素子のリードに斜角より
平行に第2のレーザ光を走査する投光レンズと、前記第
2のレーザ光が前記リードで反射して得られた第3のレ
ーザ光の走査方向と凸面の曲率半径の方向を直交して設
けられた第1のシリンドリカルレンズと、前記第3のレ
ーザ光が前記第1のシリンドリカルレンズを通過して得
られた第4のレーザ光の走査方向と凸面の曲率半径の方
向を平行にして設けられた第2のシリンドリカルレンズ
と、前記第4のレーザ光が前記第2のシリンドリカルレ
ンズで集光して得られたビームスポットを受光してその
位置を検出する一次元センサとを含むことを特徴とする
リード高さ検出装置。
a laser device that emits a first laser beam; a mirror that scans the first laser beam in one direction; and a mirror that focuses the scanned first laser beam and parallels it to a lead of a semiconductor element at an oblique angle. a projection lens configured to scan a second laser beam on the lead, and a scanning direction of a third laser beam obtained by reflection of the second laser beam on the lead, and a direction of the radius of curvature of the convex surface provided so as to be orthogonal to each other. the first cylindrical lens, and the third laser beam is provided so that the scanning direction of the fourth laser beam obtained by passing through the first cylindrical lens and the direction of the radius of curvature of the convex surface are parallel to each other. and a one-dimensional sensor that receives a beam spot obtained by condensing the fourth laser beam with the second cylindrical lens and detects the position of the beam spot. Lead height detection device.
JP1305622A 1989-11-24 1989-11-24 Lead height detector Expired - Lifetime JPH0756876B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1305622A JPH0756876B2 (en) 1989-11-24 1989-11-24 Lead height detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1305622A JPH0756876B2 (en) 1989-11-24 1989-11-24 Lead height detector

Publications (2)

Publication Number Publication Date
JPH03165535A true JPH03165535A (en) 1991-07-17
JPH0756876B2 JPH0756876B2 (en) 1995-06-14

Family

ID=17947354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1305622A Expired - Lifetime JPH0756876B2 (en) 1989-11-24 1989-11-24 Lead height detector

Country Status (1)

Country Link
JP (1) JPH0756876B2 (en)

Also Published As

Publication number Publication date
JPH0756876B2 (en) 1995-06-14

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